CN102956533B - 静电卡盘以及半导体装置或液晶显示装置的制造装置 - Google Patents

静电卡盘以及半导体装置或液晶显示装置的制造装置 Download PDF

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Publication number
CN102956533B
CN102956533B CN201210273478.2A CN201210273478A CN102956533B CN 102956533 B CN102956533 B CN 102956533B CN 201210273478 A CN201210273478 A CN 201210273478A CN 102956533 B CN102956533 B CN 102956533B
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CN
China
Prior art keywords
chuck
electrostatic chuck
concave part
region
pallet
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Active
Application number
CN201210273478.2A
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English (en)
Chinese (zh)
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CN102956533A (zh
Inventor
白岩则雄
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Shinko Electric Co Ltd
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Shinko Electric Co Ltd
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Publication of CN102956533A publication Critical patent/CN102956533A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32788—Means for moving the material to be treated for extracting the material from the process chamber
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
CN201210273478.2A 2011-08-26 2012-08-02 静电卡盘以及半导体装置或液晶显示装置的制造装置 Active CN102956533B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011184285A JP6285620B2 (ja) 2011-08-26 2011-08-26 静電チャック及び半導体・液晶製造装置
JP2011-184285 2011-08-26

Publications (2)

Publication Number Publication Date
CN102956533A CN102956533A (zh) 2013-03-06
CN102956533B true CN102956533B (zh) 2018-04-06

Family

ID=47741925

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CN201210273478.2A Active CN102956533B (zh) 2011-08-26 2012-08-02 静电卡盘以及半导体装置或液晶显示装置的制造装置

Country Status (5)

Country Link
US (1) US11037811B2 (cg-RX-API-DMAC10.html)
JP (1) JP6285620B2 (cg-RX-API-DMAC10.html)
KR (1) KR102056723B1 (cg-RX-API-DMAC10.html)
CN (1) CN102956533B (cg-RX-API-DMAC10.html)
TW (1) TWI563583B (cg-RX-API-DMAC10.html)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9668373B2 (en) * 2013-03-15 2017-05-30 Applied Materials, Inc. Substrate support chuck cooling for deposition chamber
CN104134624B (zh) * 2013-05-02 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 托盘及等离子体加工设备
JP6348321B2 (ja) * 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置
CN104465453B (zh) * 2013-09-20 2018-10-30 住友电气工业株式会社 等离子体cvd装置用的晶片加热器
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックIpマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
CN104752301B (zh) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 一种静电卡盘以及腔室
CN105280518B (zh) * 2014-05-30 2020-09-08 盛美半导体设备(上海)股份有限公司 半导体基板的热处理装置
CN105448631B (zh) * 2014-06-12 2017-07-25 中微半导体设备(上海)有限公司 一种基片安装平台和一种等离子处理装置及其运行方法
JP6377975B2 (ja) * 2014-06-23 2018-08-22 新光電気工業株式会社 基板固定装置
US10030303B2 (en) * 2014-12-19 2018-07-24 Sunpower Corporation Sputter tool
US9633886B2 (en) * 2015-04-16 2017-04-25 Varian Semiconductor Equipment Associates, Inc. Hybrid thermal electrostatic clamp
KR101776562B1 (ko) * 2015-08-20 2017-09-07 엔지케이 인슐레이터 엘티디 정전 척 히터
CN105551926B (zh) * 2015-12-11 2017-10-03 中国电子科技集团公司第四十八研究所 一种采用基座冷却旋转工件的旋转工件台
JP6572800B2 (ja) * 2016-02-26 2019-09-11 株式会社村田製作所 真空装置
WO2017195672A1 (ja) * 2016-05-09 2017-11-16 株式会社 アルバック 静電チャック、および、プラズマ処理装置
JP6858035B2 (ja) 2017-02-27 2021-04-14 新光電気工業株式会社 基板固定具及び基板固定装置
US11469130B2 (en) * 2017-06-16 2022-10-11 Jusung Engineering Co., Ltd. Substrate processing apparatus and rotating electrical connector for vacuum
WO2019087977A1 (ja) * 2017-10-30 2019-05-09 日本碍子株式会社 静電チャック及びその製法
JP6894000B2 (ja) 2017-11-06 2021-06-23 日本碍子株式会社 静電チャックアセンブリ及び静電チャック
JP6965776B2 (ja) * 2018-02-08 2021-11-10 トヨタ自動車株式会社 静電吸着搬送装置およびその方法
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
CN111448647B (zh) * 2018-03-26 2023-08-01 日本碍子株式会社 静电卡盘加热器
JP7259060B2 (ja) * 2019-02-05 2023-04-17 アプライド マテリアルズ インコーポレイテッド 堆積プロセスのためのマスクのチャッキングのための基板支持体
US12300473B2 (en) * 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
JP6918042B2 (ja) * 2019-03-26 2021-08-11 日本碍子株式会社 ウエハ載置装置
JP7349845B2 (ja) * 2019-08-13 2023-09-25 東京エレクトロン株式会社 基板処理システムにおける搬送方法
TWI871434B (zh) 2020-03-03 2025-02-01 日商東京威力科創股份有限公司 電漿處理系統及邊緣環的更換方法
TW202531381A (zh) * 2020-03-03 2025-08-01 日商東京威力科創股份有限公司 基板支持台、電漿處理系統及環狀構件之安裝方法
CN111900118B (zh) * 2020-06-19 2023-04-07 中国科学院微电子研究所 晶圆转移机构、半导体制造设备以及晶圆转移方法
JP7438070B2 (ja) * 2020-09-11 2024-02-26 新光電気工業株式会社 静電チャック、基板固定装置及び基板固定装置の製造方法
CN112768402A (zh) * 2020-12-31 2021-05-07 深圳市金旺鑫五金有限公司 一种pss刻蚀载体托盘
JP7492928B2 (ja) * 2021-02-10 2024-05-30 東京エレクトロン株式会社 基板支持器、プラズマ処理システム及びプラズマエッチング方法
JP7836160B2 (ja) * 2021-09-21 2026-03-26 日本特殊陶業株式会社 基板保持部材
CN114141683A (zh) * 2021-11-26 2022-03-04 北京北方华创微电子装备有限公司 静电托盘及基座
JP2024071016A (ja) * 2022-11-14 2024-05-24 新光電気工業株式会社 トレイ及び基板固定装置
US20240266200A1 (en) * 2023-02-08 2024-08-08 Applied Materials, Inc. Electrostatic Chuck
TW202537006A (zh) * 2024-02-02 2025-09-16 日商東京威力科創股份有限公司 基板處理裝置及托盤
KR102956125B1 (ko) * 2024-12-31 2026-04-22 세메스 주식회사 기판 처리 장치
CN119419143B (zh) * 2025-01-03 2025-04-11 浙江晟霖益嘉科技有限公司 一种晶圆静电吸附加热装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3090339B2 (ja) * 1990-03-19 2000-09-18 株式会社東芝 気相成長装置および方法
JP3297288B2 (ja) * 1996-02-13 2002-07-02 株式会社東芝 半導体装置の製造装置および製造方法
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US6646233B2 (en) * 2002-03-05 2003-11-11 Hitachi High-Technologies Corporation Wafer stage for wafer processing apparatus and wafer processing method
JP4547182B2 (ja) * 2003-04-24 2010-09-22 東京エレクトロン株式会社 プラズマ処理装置
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2006319043A (ja) 2005-05-11 2006-11-24 Hitachi High-Technologies Corp プラズマ処理装置
US7736528B2 (en) * 2005-10-12 2010-06-15 Panasonic Corporation Plasma processing apparatus and plasma processing method
US7651571B2 (en) * 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
JP2010232250A (ja) * 2009-03-26 2010-10-14 Panasonic Corp プラズマ処理装置
KR20110137775A (ko) * 2009-03-26 2011-12-23 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2011114178A (ja) * 2009-11-27 2011-06-09 Samco Inc プラズマ処理装置及びプラズマ処理方法

Also Published As

Publication number Publication date
US20130048217A1 (en) 2013-02-28
KR102056723B1 (ko) 2019-12-17
KR20130023062A (ko) 2013-03-07
TW201310564A (zh) 2013-03-01
CN102956533A (zh) 2013-03-06
US11037811B2 (en) 2021-06-15
JP2013045989A (ja) 2013-03-04
TWI563583B (en) 2016-12-21
JP6285620B2 (ja) 2018-02-28

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