CN112768402A - 一种pss刻蚀载体托盘 - Google Patents
一种pss刻蚀载体托盘 Download PDFInfo
- Publication number
- CN112768402A CN112768402A CN202011640575.1A CN202011640575A CN112768402A CN 112768402 A CN112768402 A CN 112768402A CN 202011640575 A CN202011640575 A CN 202011640575A CN 112768402 A CN112768402 A CN 112768402A
- Authority
- CN
- China
- Prior art keywords
- tray
- etching
- pss
- sculpture
- carrier tray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 71
- 230000006835 compression Effects 0.000 claims description 7
- 238000007906 compression Methods 0.000 claims description 7
- 229930091051 Arenine Natural products 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 210000003781 tooth socket Anatomy 0.000 claims description 2
- 239000000969 carrier Substances 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 8
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明涉及刻蚀载具技术领域,公开了一种PSS刻蚀载体托盘,包括刻蚀托盘上盘和刻蚀托盘下盘,所述刻蚀托盘上盘上表面开设有连接槽和导向孔,所述连接槽内部固定连接压环,所述刻蚀托盘上盘上表面设置若干个锁定孔,所述刻蚀凸台内部开设若干个滴液孔,所述刻蚀托盘下盘上表面开设有若干个螺栓预设孔,所述连接螺栓左右两侧均开设有限位槽,所述连接螺栓顶部设置有锁定杆。本发明中,当需要对圆晶片进行刻蚀时,先将连接螺栓插入螺栓预设孔内,通过限位槽使连接螺栓固定于刻蚀托盘下盘,将圆晶片放入刻蚀推盘下盘上表面设置的刻蚀凸台上表面,同时连接螺栓顶部锁定杆进入锁定孔内,使刻蚀推盘上盘盖在刻蚀托盘下盘固定连接,便于安装。
Description
技术领域
本发明属于刻蚀载具技术领域,具体为一种PSS刻蚀载体托盘。
背景技术
图形化蓝宝石衬底,也就是在蓝宝石衬底上生长干法刻蚀用掩膜,用标准 的光刻工艺将掩膜刻出图形,利用ICP刻蚀技术刻蚀蓝宝石,并去掉掩膜,再 在其上生长GaN材料,使GaN材料的纵向外延变为横向外延。一方面可以有效 减少GaN外延材料的位错密度,从而减小有源区的非辐射复合,减小反向漏电 流,提高LED的寿命;另一方面有源区发出的光,经GaN和蓝宝石衬底界面多次 散射,改变了全反射光的出射角,增加了倒装LED的光从蓝宝石衬底出射的几 率,从而提高了光的提取效率。综合这两方面的原因,使PSS上生长的LED的 出射光亮度比传统的LED大大提高,同时反向漏电流减小,LED的寿命也得到了 延长,在刻蚀过程中都需要刻蚀载具;
现有技术中的PSS刻蚀载体托盘,一般分为金属托盘配合石英盖板和金属 托盘配合金属盖板,金属托盘配合石英盖板在使用时石英盖板压边容易泵损, 而金属托盘配合金属盖板在使用时,盖板的材质容易进入化学反应中,而且上 盘和下盘固定比较麻烦。
发明内容
本发明的目的在于:为了解决现有技术中的PSS刻蚀载体托盘,一般分为金 属托盘配合石英盖板和金属托盘配合金属盖板,金属托盘配合石英盖板在使用 时石英盖板压边容易泵损,而金属托盘配合金属盖板在使用时,盖板的材质容 易进入化学反应中,而且上盘和下盘固定比较麻烦的问题,提供一种PSS刻蚀 载体托盘。
本发明采用的技术方案如下:一种PSS刻蚀载体托盘,包括刻蚀托盘上盘、 刻蚀托盘下盘和连接螺栓,所述刻蚀托盘上盘上表面开设有连接槽和导向孔, 所述连接槽内部固定连接有压环,所述刻蚀托盘上盘上表面设置有若干个锁定 孔,所述刻蚀托盘下盘上表面设置有刻蚀凸台和导向柱,所述刻蚀凸台内部开 设有若干个滴液孔,所述刻蚀托盘下盘上表面开设有若干个螺栓预设孔。
在一优选的实施方式中,所述导向孔和导向柱位置相同。
在一优选的实施方式中,所述连接槽内壁设置有用于压环镶嵌安装的卡槽。
在一优选的实施方式中,所述螺栓预设孔和锁定孔数量及位置均相同。
在一优选的实施方式中,所述压环内侧设置有若干个凸块。
在一优选的实施方式中,所述连接槽和刻蚀凸台数量均为九个,且位置相同。
在一优选的实施方式中,所述锁定孔内部镶不锈钢牙套。
在一优选的实施方式中,所述连接槽和刻蚀凸台均一侧为水平,其余位置为 圆形型结构。
综上所述,由于采用了上述技术方案,本发明的有益效果是:
1、本发明中,当需要对圆晶片进行刻蚀时,先将连接螺栓插入螺栓预设孔 内,通过限位槽使连接螺栓固定于刻蚀托盘下盘,将圆晶片放入刻蚀推盘下盘 上表面设置的刻蚀凸台上表面,将刻蚀托盘上盘上表面开设的导向孔对准刻蚀 推盘下盘上表面设置的导向柱,将刻蚀推盘上盘盖在刻蚀托盘下盘上表面,同 时连接螺栓顶部锁定杆进入锁定孔内,使刻蚀推盘上盘盖在刻蚀托盘下盘固定 连接,便于安装。
2、本发明中,通过在连接槽内部固定连接有压环,压环内侧设置有若干个 凸块,通过压环对圆晶片进行固定,既可以避免使用石英片而导致的石英片泵 损,又可以避免金属盖板影响刻蚀质量。
3、本发明中,连接槽一侧为水平,其余位置为圆形型结构,使载具在相同 面积下,提供更多的刻蚀位置,间接的提高了工作效率。
附图说明
图1为本发明一种PSS刻蚀载体托盘中刻蚀托盘上盘的俯视图;
图2为本发明一种PSS刻蚀载体托盘中刻蚀托盘上盘的底视图;
图3为本发明一种PSS刻蚀载体托盘中刻蚀托盘下盘的俯视图;
图4为本发明一种PSS刻蚀载体托盘中刻蚀托盘下盘的底视图;
图5为本发明一种PSS刻蚀载体托盘中A的放大图。
图中标记:1-刻蚀托盘上盘、2-刻蚀托盘下盘、3-连接槽、4-导向孔、5-压 环、6-锁定孔、7-刻蚀凸台、8-滴液孔、9-导向柱、10-螺栓预设孔、
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明 实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述 的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施 例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施 例,都属于本发明保护的范围。
参照图1-5,一种PSS刻蚀载体托盘,包括刻蚀托盘上盘1和刻 蚀托盘下盘2,其特征在于:刻蚀托盘上盘1上表面开设有连接槽3 和导向孔4,连接槽3内部固定连接有压环5,压环5内侧设置有若 干个凸块,连接槽3内壁设置有用于压环5镶嵌安装的卡槽,刻蚀托 盘上盘1上表面设置有若干个锁定孔6,锁定孔6内部镶不锈钢牙套, 刻蚀托盘下盘2上表面设置有刻蚀凸台7和导向柱9,连接槽3和刻 蚀凸台7均一侧为水平,其余位置为圆形型结构,连接槽3和刻蚀凸 台7数量均为九个,且位置相同,导向孔4和导向柱9位置相同,刻 蚀凸台7内部开设有若干个滴液孔8,刻蚀托盘下盘2上表面开设有 若干个螺栓预设孔10,螺栓预设孔10和锁定孔6数量及位置均相同。
工作原理:当需要对圆晶片进行刻蚀时,先将连接螺栓插入螺栓预设孔10 内,将圆晶片放入刻蚀推盘下盘2上表面设置的刻蚀凸台7上表面,将刻蚀托 盘上盘1上表面开设的导向孔4对准刻蚀推盘下盘2上表面设置的导向柱9,将 刻蚀推盘上盘1盖在刻蚀托盘下盘2上表面,同时连接螺栓顶部进入锁定孔6 内,使刻蚀推盘上盘1盖在刻蚀托盘下盘2固定连接,便于安装;
通过在连接槽3内部固定连接有压环5,压环5内侧设置有若干个凸块,通 过压环5对圆晶片进行固定,既可以避免使用石英片而导致的石英片泵损,又 可以避免金属盖板影响刻蚀质量;
连接槽3和刻蚀凸台7数量均为九个,连接槽3一侧为水平,其余位置为圆 形型结构,使载具在相同面积下,提供更多的刻蚀位置,间接的提高了工作效 率。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一 个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实 体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包 含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素 的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的 其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在 没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包 括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述实 施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可 以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行 等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实 施例技术方案的精神和范围。
Claims (8)
1.一种PSS刻蚀载体托盘,包括刻蚀托盘上盘(1)和刻蚀托盘下盘(2),其特征在于:所述刻蚀托盘上盘(1)上表面开设有连接槽(3)和导向孔(4),所述连接槽(3)内部固定连接有压环(5),所述刻蚀托盘上盘(1)上表面设置有若干个锁定孔(6),所述刻蚀托盘下盘(2)上表面设置有刻蚀凸台(7)和导向柱(9),所述刻蚀凸台(7)内部开设有若干个滴液孔(8),所述刻蚀托盘下盘(2)上表面开设有若干个螺栓预设孔(10)。
2.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述导向孔(4)和导向柱(9)位置相同。
3.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述连接槽(3)内壁设置有用于压环(5)镶嵌安装的卡槽。
4.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述螺栓预设孔(10)和锁定孔(6)数量及位置均相同。
5.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述压环(5)内侧设置有若干个凸块。
6.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述连接槽(3)和刻蚀凸台(7)数量均为九个,且位置相同。
7.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述锁定孔(6)内部镶不锈钢牙套。
8.如权利要求1所述的一种PSS刻蚀载体托盘,其特征在于:所述连接槽(3)和刻蚀凸台(7)均一侧为水平,其余位置为圆形型结构。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011640575.1A CN112768402A (zh) | 2020-12-31 | 2020-12-31 | 一种pss刻蚀载体托盘 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011640575.1A CN112768402A (zh) | 2020-12-31 | 2020-12-31 | 一种pss刻蚀载体托盘 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112768402A true CN112768402A (zh) | 2021-05-07 |
Family
ID=75698459
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011640575.1A Pending CN112768402A (zh) | 2020-12-31 | 2020-12-31 | 一种pss刻蚀载体托盘 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112768402A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114361309A (zh) * | 2021-12-31 | 2022-04-15 | 安徽光智科技有限公司 | 四吋pss衬底产量的提升方案 |
-
2020
- 2020-12-31 CN CN202011640575.1A patent/CN112768402A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114361309A (zh) * | 2021-12-31 | 2022-04-15 | 安徽光智科技有限公司 | 四吋pss衬底产量的提升方案 |
CN114361309B (zh) * | 2021-12-31 | 2024-03-05 | 安徽光智科技有限公司 | 四吋pss衬底产量的提升方案 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101604717B (zh) | 一种垂直GaN基LED芯片及其制作方法 | |
TWI455346B (zh) | 發光裝置及其製造方法 | |
EP2132790B1 (en) | Led with porous diffusing reflector | |
CN102044608A (zh) | 一种倒装焊led芯片结构及其制作方法 | |
US9153739B2 (en) | Light emitting devices with textured active layer | |
CN101931039B (zh) | 具有双层交错贯穿孔洞的氮化镓基发光二极管及其制作工艺 | |
JP2008047861A (ja) | 垂直構造窒化ガリウム系発光ダイオード素子及びその製造方法 | |
CN112768402A (zh) | 一种pss刻蚀载体托盘 | |
CN215118869U (zh) | 一种pss刻蚀载体托盘 | |
AU2001286288A1 (en) | The semiconductor led device and producing method | |
KR20090022286A (ko) | 발광 다이오드 및 그 제조방법 | |
CN102544269A (zh) | 侧壁具有微柱透镜阵列图案的led芯片的制造方法 | |
CN216250771U (zh) | 复合图形衬底及包含该衬底的led外延结构 | |
CN115763648A (zh) | 一种发光二极管及其制作方法 | |
CN204760414U (zh) | 一种图形化蓝宝石衬底 | |
CN104465926A (zh) | 图形化蓝宝石衬底及发光二极管 | |
CN100590900C (zh) | 一种金属半导体场效应发光晶体管及其制作方法 | |
CN210379096U (zh) | 一种高亮度紫光led芯片 | |
CN218827049U (zh) | 衬底刻蚀托盘 | |
CN219350164U (zh) | 一种裙边扩大的八孔铝盘上盖 | |
CN102832303B (zh) | 一种氮化镓基高亮度发光二极管的制作方法 | |
CN212380400U (zh) | 一种平整度密封组件 | |
CN111834265A (zh) | 一种平整度密封组件 | |
CN205406558U (zh) | 一种提高正向光输出量的蓝宝石衬底 | |
CN104332538A (zh) | 一种发光二极管外延结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: 518000 101, No. 18, Jiangfu Road, Xinzhuang community, Matian street, Guangming District, Shenzhen, Guangdong Applicant after: Shenzhen jinwangxin Semiconductor Technology Co.,Ltd. Applicant after: Gu Wei Address before: No.18, Jiangfu Road, Shiwei community, Matian street, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen jinwangxin Hardware Co.,Ltd. Applicant before: Gu Wei |
|
CB02 | Change of applicant information |