CN1029274C - 具有平面构图表面的多片组件和集成电路衬底 - Google Patents

具有平面构图表面的多片组件和集成电路衬底 Download PDF

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Publication number
CN1029274C
CN1029274C CN92101596A CN92101596A CN1029274C CN 1029274 C CN1029274 C CN 1029274C CN 92101596 A CN92101596 A CN 92101596A CN 92101596 A CN92101596 A CN 92101596A CN 1029274 C CN1029274 C CN 1029274C
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CN
China
Prior art keywords
conductor
pattern
substrate
layer
conductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN92101596A
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English (en)
Chinese (zh)
Other versions
CN1070287A (zh
Inventor
杰伊·马丁·凯什
安德鲁·弗兰克·伯奈特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing Co
Original Assignee
Boeing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boeing Co filed Critical Boeing Co
Publication of CN1070287A publication Critical patent/CN1070287A/zh
Application granted granted Critical
Publication of CN1029274C publication Critical patent/CN1029274C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H10W20/01
    • H10W70/095
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/465Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer having channels for the next circuit layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467Adding a circuit layer by thin film methods
    • H10W20/062
    • H10W70/05
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03Conductive materials
    • H05K2201/0332Structure of the conductor
    • H05K2201/0364Conductor shape
    • H05K2201/0376Flush conductors, i.e. flush with the surface of the printed circuit
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/095Conductive through-holes or vias
    • H05K2201/09563Metal filled via
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0023Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0041Etching of the substrate by chemical or physical means by plasma etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061Etching masks
    • H05K3/064Photoresists
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
CN92101596A 1991-02-11 1992-02-11 具有平面构图表面的多片组件和集成电路衬底 Expired - Fee Related CN1029274C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/654,880 US5187119A (en) 1991-02-11 1991-02-11 Multichip module and integrated circuit substrates having planarized patterned surfaces
US654,880 1996-05-29

Publications (2)

Publication Number Publication Date
CN1070287A CN1070287A (zh) 1993-03-24
CN1029274C true CN1029274C (zh) 1995-07-05

Family

ID=24626612

Family Applications (1)

Application Number Title Priority Date Filing Date
CN92101596A Expired - Fee Related CN1029274C (zh) 1991-02-11 1992-02-11 具有平面构图表面的多片组件和集成电路衬底

Country Status (8)

Country Link
US (1) US5187119A (enExample)
EP (1) EP0571547A1 (enExample)
JP (1) JPH06505833A (enExample)
KR (1) KR930703699A (enExample)
CN (1) CN1029274C (enExample)
CA (1) CA2101426A1 (enExample)
TW (1) TW226052B (enExample)
WO (1) WO1992014261A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327292C (zh) * 1998-10-30 2007-07-18 国际商业机器公司 制作自对准部件的方法

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5391516A (en) * 1991-10-10 1995-02-21 Martin Marietta Corp. Method for enhancement of semiconductor device contact pads
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
US5384281A (en) * 1992-12-29 1995-01-24 International Business Machines Corporation Non-conformal and oxidizable etch stops for submicron features
US5397741A (en) * 1993-03-29 1995-03-14 International Business Machines Corporation Process for metallized vias in polyimide
JP2947054B2 (ja) * 1994-03-04 1999-09-13 ヤマハ株式会社 配線形成法
US5494854A (en) * 1994-08-17 1996-02-27 Texas Instruments Incorporated Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films
KR0171069B1 (ko) * 1994-10-27 1999-03-30 문정환 반도체 장치의 접촉부 형성방법
US5851899A (en) * 1996-08-08 1998-12-22 Siemens Aktiengesellschaft Gapfill and planarization process for shallow trench isolation
JPH10163319A (ja) * 1996-11-29 1998-06-19 Hitachi Ltd 半導体集積回路装置の製造方法
US6127721A (en) * 1997-09-30 2000-10-03 Siemens Aktiengesellschaft Soft passivation layer in semiconductor fabrication
US6706623B1 (en) * 1997-12-10 2004-03-16 Texas Instruments Incorporated Method and system for avoiding plasma etch damage
US6093656A (en) * 1998-02-26 2000-07-25 Vlsi Technology, Inc. Method of minimizing dishing during chemical mechanical polishing of semiconductor metals for making a semiconductor device
TW407342B (en) * 1998-06-17 2000-10-01 United Microelectronics Corp Planarization method of damascene structure
US6225210B1 (en) * 1998-12-09 2001-05-01 Advanced Micro Devices, Inc. High density capping layers with improved adhesion to copper interconnects
JP3708732B2 (ja) * 1998-12-25 2005-10-19 Necエレクトロニクス株式会社 半導体装置の製造方法
US6803327B1 (en) 1999-04-05 2004-10-12 Taiwan Semiconductor Manufacturing Company Cost effective polymide process to solve passivation extrusion or damage and SOG delminates
US6358119B1 (en) 1999-06-21 2002-03-19 Taiwan Semiconductor Manufacturing Company Way to remove CU line damage after CU CMP
US6800548B2 (en) * 2002-01-02 2004-10-05 Intel Corporation Method to avoid via poisoning in dual damascene process
CN1176488C (zh) * 2002-03-15 2004-11-17 台湾积体电路制造股份有限公司 测试金属层间介电层强度的方法
JP2005191408A (ja) * 2003-12-26 2005-07-14 Matsushita Electric Ind Co Ltd コイル導電体とその製造方法およびこれを用いた電子部品
US7462317B2 (en) 2004-11-10 2008-12-09 Enpirion, Inc. Method of manufacturing an encapsulated package for a magnetic device
US7426780B2 (en) 2004-11-10 2008-09-23 Enpirion, Inc. Method of manufacturing a power module
JP4578254B2 (ja) * 2005-01-26 2010-11-10 京セラ株式会社 多層配線基板
US7688172B2 (en) * 2005-10-05 2010-03-30 Enpirion, Inc. Magnetic device having a conductive clip
US8631560B2 (en) * 2005-10-05 2014-01-21 Enpirion, Inc. Method of forming a magnetic device having a conductive clip
US8139362B2 (en) * 2005-10-05 2012-03-20 Enpirion, Inc. Power module with a magnetic device having a conductive clip
US8701272B2 (en) 2005-10-05 2014-04-22 Enpirion, Inc. Method of forming a power module with a magnetic device having a conductive clip
US20070138405A1 (en) * 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
US8133529B2 (en) * 2007-09-10 2012-03-13 Enpirion, Inc. Method of forming a micromagnetic device
US8018315B2 (en) * 2007-09-10 2011-09-13 Enpirion, Inc. Power converter employing a micromagnetic device
US7920042B2 (en) 2007-09-10 2011-04-05 Enpirion, Inc. Micromagnetic device and method of forming the same
US7955868B2 (en) * 2007-09-10 2011-06-07 Enpirion, Inc. Method of forming a micromagnetic device
US7952459B2 (en) * 2007-09-10 2011-05-31 Enpirion, Inc. Micromagnetic device and method of forming the same
US8541991B2 (en) 2008-04-16 2013-09-24 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8686698B2 (en) * 2008-04-16 2014-04-01 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8692532B2 (en) 2008-04-16 2014-04-08 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US9246390B2 (en) * 2008-04-16 2016-01-26 Enpirion, Inc. Power converter with controller operable in selected modes of operation
US8339802B2 (en) * 2008-10-02 2012-12-25 Enpirion, Inc. Module having a stacked magnetic device and semiconductor device and method of forming the same
US8153473B2 (en) * 2008-10-02 2012-04-10 Empirion, Inc. Module having a stacked passive element and method of forming the same
US9054086B2 (en) * 2008-10-02 2015-06-09 Enpirion, Inc. Module having a stacked passive element and method of forming the same
US8266793B2 (en) * 2008-10-02 2012-09-18 Enpirion, Inc. Module having a stacked magnetic device and semiconductor device and method of forming the same
US9548714B2 (en) * 2008-12-29 2017-01-17 Altera Corporation Power converter with a dynamically configurable controller and output filter
US8698463B2 (en) * 2008-12-29 2014-04-15 Enpirion, Inc. Power converter with a dynamically configurable controller based on a power conversion mode
US8867295B2 (en) 2010-12-17 2014-10-21 Enpirion, Inc. Power converter for a memory module
EP2602818A1 (en) * 2011-12-09 2013-06-12 Ipdia An interposer device
US9509217B2 (en) 2015-04-20 2016-11-29 Altera Corporation Asymmetric power flow controller for a power converter and method of operating the same
CN112533395B (zh) * 2020-12-21 2021-12-24 北京同方信息安全技术股份有限公司 印制电路板中埋入电阻的方法及其印制电路板
CN114190002A (zh) * 2021-12-09 2022-03-15 上达电子(深圳)股份有限公司 一种柔性封装基板半埋入式厚铜精细线路的成型方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145340A (en) * 1981-03-05 1982-09-08 Toshiba Corp Manufacture of semiconductor device
US4415606A (en) * 1983-01-10 1983-11-15 Ncr Corporation Method of reworking upper metal in multilayer metal integrated circuits
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits
US4584761A (en) * 1984-05-15 1986-04-29 Digital Equipment Corporation Integrated circuit chip processing techniques and integrated chip produced thereby
JPS6140134A (ja) * 1984-08-01 1986-02-26 Tokyo Ink Kk シ−トによるホツトメルト被覆方法
JPS61140134A (ja) * 1984-12-13 1986-06-27 Toshiba Corp 半導体装置の製造方法
JPS63215056A (ja) * 1987-03-04 1988-09-07 Matsushita Electronics Corp 半導体装置の製造方法
JPH0821559B2 (ja) * 1988-02-12 1996-03-04 三菱電機株式会社 半導体集積回路装置の製造方法
US5055425A (en) * 1989-06-01 1991-10-08 Hewlett-Packard Company Stacked solid via formation in integrated circuit systems
US4952275A (en) * 1989-12-15 1990-08-28 Microelectronics And Computer Technology Corporation Copper etching solution and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327292C (zh) * 1998-10-30 2007-07-18 国际商业机器公司 制作自对准部件的方法

Also Published As

Publication number Publication date
KR930703699A (ko) 1993-11-30
CA2101426A1 (en) 1992-08-12
EP0571547A1 (en) 1993-12-01
EP0571547A4 (enExample) 1994-02-09
CN1070287A (zh) 1993-03-24
JPH06505833A (ja) 1994-06-30
US5187119A (en) 1993-02-16
TW226052B (enExample) 1994-07-01
WO1992014261A1 (en) 1992-08-20

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