TW226052B - - Google Patents
Info
- Publication number
- TW226052B TW226052B TW081100926A TW81100926A TW226052B TW 226052 B TW226052 B TW 226052B TW 081100926 A TW081100926 A TW 081100926A TW 81100926 A TW81100926 A TW 81100926A TW 226052 B TW226052 B TW 226052B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/465—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer having channels for the next circuit layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/467—Adding a circuit layer by thin film methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0376—Flush conductors, i.e. flush with the surface of the printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/654,880 US5187119A (en) | 1991-02-11 | 1991-02-11 | Multichip module and integrated circuit substrates having planarized patterned surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW226052B true TW226052B (enExample) | 1994-07-01 |
Family
ID=24626612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081100926A TW226052B (enExample) | 1991-02-11 | 1992-02-11 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5187119A (enExample) |
| EP (1) | EP0571547A1 (enExample) |
| JP (1) | JPH06505833A (enExample) |
| KR (1) | KR930703699A (enExample) |
| CN (1) | CN1029274C (enExample) |
| CA (1) | CA2101426A1 (enExample) |
| TW (1) | TW226052B (enExample) |
| WO (1) | WO1992014261A1 (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5391516A (en) * | 1991-10-10 | 1995-02-21 | Martin Marietta Corp. | Method for enhancement of semiconductor device contact pads |
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5384281A (en) * | 1992-12-29 | 1995-01-24 | International Business Machines Corporation | Non-conformal and oxidizable etch stops for submicron features |
| US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
| JP2947054B2 (ja) * | 1994-03-04 | 1999-09-13 | ヤマハ株式会社 | 配線形成法 |
| US5494854A (en) * | 1994-08-17 | 1996-02-27 | Texas Instruments Incorporated | Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films |
| KR0171069B1 (ko) * | 1994-10-27 | 1999-03-30 | 문정환 | 반도체 장치의 접촉부 형성방법 |
| US5851899A (en) * | 1996-08-08 | 1998-12-22 | Siemens Aktiengesellschaft | Gapfill and planarization process for shallow trench isolation |
| JPH10163319A (ja) * | 1996-11-29 | 1998-06-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6127721A (en) * | 1997-09-30 | 2000-10-03 | Siemens Aktiengesellschaft | Soft passivation layer in semiconductor fabrication |
| US6706623B1 (en) * | 1997-12-10 | 2004-03-16 | Texas Instruments Incorporated | Method and system for avoiding plasma etch damage |
| US6093656A (en) * | 1998-02-26 | 2000-07-25 | Vlsi Technology, Inc. | Method of minimizing dishing during chemical mechanical polishing of semiconductor metals for making a semiconductor device |
| TW407342B (en) * | 1998-06-17 | 2000-10-01 | United Microelectronics Corp | Planarization method of damascene structure |
| US6150256A (en) * | 1998-10-30 | 2000-11-21 | International Business Machines Corporation | Method for forming self-aligned features |
| US6225210B1 (en) * | 1998-12-09 | 2001-05-01 | Advanced Micro Devices, Inc. | High density capping layers with improved adhesion to copper interconnects |
| JP3708732B2 (ja) | 1998-12-25 | 2005-10-19 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6803327B1 (en) | 1999-04-05 | 2004-10-12 | Taiwan Semiconductor Manufacturing Company | Cost effective polymide process to solve passivation extrusion or damage and SOG delminates |
| US6358119B1 (en) | 1999-06-21 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Way to remove CU line damage after CU CMP |
| US6800548B2 (en) * | 2002-01-02 | 2004-10-05 | Intel Corporation | Method to avoid via poisoning in dual damascene process |
| CN1314115C (zh) * | 2002-03-15 | 2007-05-02 | 台湾积体电路制造股份有限公司 | 多重金属层内连线结构 |
| JP2005191408A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | コイル導電体とその製造方法およびこれを用いた電子部品 |
| US7426780B2 (en) | 2004-11-10 | 2008-09-23 | Enpirion, Inc. | Method of manufacturing a power module |
| US7462317B2 (en) | 2004-11-10 | 2008-12-09 | Enpirion, Inc. | Method of manufacturing an encapsulated package for a magnetic device |
| JP4578254B2 (ja) * | 2005-01-26 | 2010-11-10 | 京セラ株式会社 | 多層配線基板 |
| US7688172B2 (en) * | 2005-10-05 | 2010-03-30 | Enpirion, Inc. | Magnetic device having a conductive clip |
| US8139362B2 (en) * | 2005-10-05 | 2012-03-20 | Enpirion, Inc. | Power module with a magnetic device having a conductive clip |
| US8701272B2 (en) * | 2005-10-05 | 2014-04-22 | Enpirion, Inc. | Method of forming a power module with a magnetic device having a conductive clip |
| US8631560B2 (en) * | 2005-10-05 | 2014-01-21 | Enpirion, Inc. | Method of forming a magnetic device having a conductive clip |
| US20070138405A1 (en) * | 2005-12-16 | 2007-06-21 | 3M Innovative Properties Company | Corona etching |
| US7955868B2 (en) * | 2007-09-10 | 2011-06-07 | Enpirion, Inc. | Method of forming a micromagnetic device |
| US7920042B2 (en) | 2007-09-10 | 2011-04-05 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
| US7952459B2 (en) * | 2007-09-10 | 2011-05-31 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
| US8018315B2 (en) * | 2007-09-10 | 2011-09-13 | Enpirion, Inc. | Power converter employing a micromagnetic device |
| US8133529B2 (en) * | 2007-09-10 | 2012-03-13 | Enpirion, Inc. | Method of forming a micromagnetic device |
| US8686698B2 (en) * | 2008-04-16 | 2014-04-01 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US8541991B2 (en) | 2008-04-16 | 2013-09-24 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US9246390B2 (en) * | 2008-04-16 | 2016-01-26 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US8692532B2 (en) | 2008-04-16 | 2014-04-08 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US9054086B2 (en) * | 2008-10-02 | 2015-06-09 | Enpirion, Inc. | Module having a stacked passive element and method of forming the same |
| US8153473B2 (en) * | 2008-10-02 | 2012-04-10 | Empirion, Inc. | Module having a stacked passive element and method of forming the same |
| US8339802B2 (en) * | 2008-10-02 | 2012-12-25 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
| US8266793B2 (en) * | 2008-10-02 | 2012-09-18 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
| US8698463B2 (en) * | 2008-12-29 | 2014-04-15 | Enpirion, Inc. | Power converter with a dynamically configurable controller based on a power conversion mode |
| US9548714B2 (en) * | 2008-12-29 | 2017-01-17 | Altera Corporation | Power converter with a dynamically configurable controller and output filter |
| US8867295B2 (en) | 2010-12-17 | 2014-10-21 | Enpirion, Inc. | Power converter for a memory module |
| EP2602818A1 (en) * | 2011-12-09 | 2013-06-12 | Ipdia | An interposer device |
| US9509217B2 (en) | 2015-04-20 | 2016-11-29 | Altera Corporation | Asymmetric power flow controller for a power converter and method of operating the same |
| CN112533395B (zh) * | 2020-12-21 | 2021-12-24 | 北京同方信息安全技术股份有限公司 | 印制电路板中埋入电阻的方法及其印制电路板 |
| CN114190002A (zh) * | 2021-12-09 | 2022-03-15 | 上达电子(深圳)股份有限公司 | 一种柔性封装基板半埋入式厚铜精细线路的成型方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57145340A (en) * | 1981-03-05 | 1982-09-08 | Toshiba Corp | Manufacture of semiconductor device |
| US4415606A (en) * | 1983-01-10 | 1983-11-15 | Ncr Corporation | Method of reworking upper metal in multilayer metal integrated circuits |
| US4617193A (en) * | 1983-06-16 | 1986-10-14 | Digital Equipment Corporation | Planar interconnect for integrated circuits |
| US4584761A (en) * | 1984-05-15 | 1986-04-29 | Digital Equipment Corporation | Integrated circuit chip processing techniques and integrated chip produced thereby |
| JPS6140134A (ja) * | 1984-08-01 | 1986-02-26 | Tokyo Ink Kk | シ−トによるホツトメルト被覆方法 |
| JPS61140134A (ja) * | 1984-12-13 | 1986-06-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPS63215056A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPH0821559B2 (ja) * | 1988-02-12 | 1996-03-04 | 三菱電機株式会社 | 半導体集積回路装置の製造方法 |
| US5055425A (en) * | 1989-06-01 | 1991-10-08 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
| US4952275A (en) * | 1989-12-15 | 1990-08-28 | Microelectronics And Computer Technology Corporation | Copper etching solution and method |
-
1991
- 1991-02-11 US US07/654,880 patent/US5187119A/en not_active Expired - Lifetime
-
1992
- 1992-02-10 WO PCT/US1992/001140 patent/WO1992014261A1/en not_active Ceased
- 1992-02-10 CA CA002101426A patent/CA2101426A1/en not_active Abandoned
- 1992-02-10 KR KR1019930702379A patent/KR930703699A/ko not_active Withdrawn
- 1992-02-10 EP EP92907235A patent/EP0571547A1/en not_active Withdrawn
- 1992-02-10 JP JP4507047A patent/JPH06505833A/ja active Pending
- 1992-02-11 CN CN92101596A patent/CN1029274C/zh not_active Expired - Fee Related
- 1992-02-11 TW TW081100926A patent/TW226052B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1992014261A1 (en) | 1992-08-20 |
| CA2101426A1 (en) | 1992-08-12 |
| JPH06505833A (ja) | 1994-06-30 |
| EP0571547A1 (en) | 1993-12-01 |
| US5187119A (en) | 1993-02-16 |
| EP0571547A4 (enExample) | 1994-02-09 |
| CN1029274C (zh) | 1995-07-05 |
| CN1070287A (zh) | 1993-03-24 |
| KR930703699A (ko) | 1993-11-30 |