CA2101426A1 - Multichip module and integrated circuit substrates having planarized patterned surfaces - Google Patents
Multichip module and integrated circuit substrates having planarized patterned surfacesInfo
- Publication number
- CA2101426A1 CA2101426A1 CA002101426A CA2101426A CA2101426A1 CA 2101426 A1 CA2101426 A1 CA 2101426A1 CA 002101426 A CA002101426 A CA 002101426A CA 2101426 A CA2101426 A CA 2101426A CA 2101426 A1 CA2101426 A1 CA 2101426A1
- Authority
- CA
- Canada
- Prior art keywords
- conductor
- portions
- features
- etching
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 37
- 239000004020 conductor Substances 0.000 claims abstract description 88
- 238000000034 method Methods 0.000 claims abstract description 70
- 238000005530 etching Methods 0.000 claims abstract description 29
- 239000003989 dielectric material Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 claims abstract description 9
- 238000011049 filling Methods 0.000 claims abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 41
- 229910052802 copper Inorganic materials 0.000 claims description 41
- 239000010949 copper Substances 0.000 claims description 41
- 239000004642 Polyimide Substances 0.000 claims description 28
- 229920001721 polyimide Polymers 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 18
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 238000007747 plating Methods 0.000 description 11
- 238000013459 approach Methods 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000002161 passivation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001393 microlithography Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 3
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229920002160 Celluloid Polymers 0.000 description 1
- 101001003194 Eleusine coracana Alpha-amylase/trypsin inhibitor Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/465—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer having channels for the next circuit layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/467—Adding a circuit layer by thin film methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0364—Conductor shape
- H05K2201/0376—Flush conductors, i.e. flush with the surface of the printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09563—Metal filled via
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0023—Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0041—Etching of the substrate by chemical or physical means by plasma etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
- H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US654,880 | 1991-02-11 | ||
| US07/654,880 US5187119A (en) | 1991-02-11 | 1991-02-11 | Multichip module and integrated circuit substrates having planarized patterned surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2101426A1 true CA2101426A1 (en) | 1992-08-12 |
Family
ID=24626612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002101426A Abandoned CA2101426A1 (en) | 1991-02-11 | 1992-02-10 | Multichip module and integrated circuit substrates having planarized patterned surfaces |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US5187119A (enExample) |
| EP (1) | EP0571547A1 (enExample) |
| JP (1) | JPH06505833A (enExample) |
| KR (1) | KR930703699A (enExample) |
| CN (1) | CN1029274C (enExample) |
| CA (1) | CA2101426A1 (enExample) |
| TW (1) | TW226052B (enExample) |
| WO (1) | WO1992014261A1 (enExample) |
Families Citing this family (49)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5391516A (en) * | 1991-10-10 | 1995-02-21 | Martin Marietta Corp. | Method for enhancement of semiconductor device contact pads |
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5384281A (en) * | 1992-12-29 | 1995-01-24 | International Business Machines Corporation | Non-conformal and oxidizable etch stops for submicron features |
| US5397741A (en) * | 1993-03-29 | 1995-03-14 | International Business Machines Corporation | Process for metallized vias in polyimide |
| JP2947054B2 (ja) * | 1994-03-04 | 1999-09-13 | ヤマハ株式会社 | 配線形成法 |
| US5494854A (en) * | 1994-08-17 | 1996-02-27 | Texas Instruments Incorporated | Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO2 films |
| KR0171069B1 (ko) * | 1994-10-27 | 1999-03-30 | 문정환 | 반도체 장치의 접촉부 형성방법 |
| US5851899A (en) * | 1996-08-08 | 1998-12-22 | Siemens Aktiengesellschaft | Gapfill and planarization process for shallow trench isolation |
| JPH10163319A (ja) * | 1996-11-29 | 1998-06-19 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US6127721A (en) * | 1997-09-30 | 2000-10-03 | Siemens Aktiengesellschaft | Soft passivation layer in semiconductor fabrication |
| US6706623B1 (en) * | 1997-12-10 | 2004-03-16 | Texas Instruments Incorporated | Method and system for avoiding plasma etch damage |
| US6093656A (en) * | 1998-02-26 | 2000-07-25 | Vlsi Technology, Inc. | Method of minimizing dishing during chemical mechanical polishing of semiconductor metals for making a semiconductor device |
| TW407342B (en) * | 1998-06-17 | 2000-10-01 | United Microelectronics Corp | Planarization method of damascene structure |
| US6150256A (en) * | 1998-10-30 | 2000-11-21 | International Business Machines Corporation | Method for forming self-aligned features |
| US6225210B1 (en) * | 1998-12-09 | 2001-05-01 | Advanced Micro Devices, Inc. | High density capping layers with improved adhesion to copper interconnects |
| JP3708732B2 (ja) | 1998-12-25 | 2005-10-19 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US6803327B1 (en) | 1999-04-05 | 2004-10-12 | Taiwan Semiconductor Manufacturing Company | Cost effective polymide process to solve passivation extrusion or damage and SOG delminates |
| US6358119B1 (en) | 1999-06-21 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | Way to remove CU line damage after CU CMP |
| US6800548B2 (en) * | 2002-01-02 | 2004-10-05 | Intel Corporation | Method to avoid via poisoning in dual damascene process |
| CN1314115C (zh) * | 2002-03-15 | 2007-05-02 | 台湾积体电路制造股份有限公司 | 多重金属层内连线结构 |
| JP2005191408A (ja) * | 2003-12-26 | 2005-07-14 | Matsushita Electric Ind Co Ltd | コイル導電体とその製造方法およびこれを用いた電子部品 |
| US7426780B2 (en) | 2004-11-10 | 2008-09-23 | Enpirion, Inc. | Method of manufacturing a power module |
| US7462317B2 (en) | 2004-11-10 | 2008-12-09 | Enpirion, Inc. | Method of manufacturing an encapsulated package for a magnetic device |
| JP4578254B2 (ja) * | 2005-01-26 | 2010-11-10 | 京セラ株式会社 | 多層配線基板 |
| US7688172B2 (en) * | 2005-10-05 | 2010-03-30 | Enpirion, Inc. | Magnetic device having a conductive clip |
| US8139362B2 (en) * | 2005-10-05 | 2012-03-20 | Enpirion, Inc. | Power module with a magnetic device having a conductive clip |
| US8701272B2 (en) * | 2005-10-05 | 2014-04-22 | Enpirion, Inc. | Method of forming a power module with a magnetic device having a conductive clip |
| US8631560B2 (en) * | 2005-10-05 | 2014-01-21 | Enpirion, Inc. | Method of forming a magnetic device having a conductive clip |
| US20070138405A1 (en) * | 2005-12-16 | 2007-06-21 | 3M Innovative Properties Company | Corona etching |
| US7955868B2 (en) * | 2007-09-10 | 2011-06-07 | Enpirion, Inc. | Method of forming a micromagnetic device |
| US7920042B2 (en) | 2007-09-10 | 2011-04-05 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
| US7952459B2 (en) * | 2007-09-10 | 2011-05-31 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
| US8018315B2 (en) * | 2007-09-10 | 2011-09-13 | Enpirion, Inc. | Power converter employing a micromagnetic device |
| US8133529B2 (en) * | 2007-09-10 | 2012-03-13 | Enpirion, Inc. | Method of forming a micromagnetic device |
| US8686698B2 (en) * | 2008-04-16 | 2014-04-01 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US8541991B2 (en) | 2008-04-16 | 2013-09-24 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US9246390B2 (en) * | 2008-04-16 | 2016-01-26 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US8692532B2 (en) | 2008-04-16 | 2014-04-08 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US9054086B2 (en) * | 2008-10-02 | 2015-06-09 | Enpirion, Inc. | Module having a stacked passive element and method of forming the same |
| US8153473B2 (en) * | 2008-10-02 | 2012-04-10 | Empirion, Inc. | Module having a stacked passive element and method of forming the same |
| US8339802B2 (en) * | 2008-10-02 | 2012-12-25 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
| US8266793B2 (en) * | 2008-10-02 | 2012-09-18 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
| US8698463B2 (en) * | 2008-12-29 | 2014-04-15 | Enpirion, Inc. | Power converter with a dynamically configurable controller based on a power conversion mode |
| US9548714B2 (en) * | 2008-12-29 | 2017-01-17 | Altera Corporation | Power converter with a dynamically configurable controller and output filter |
| US8867295B2 (en) | 2010-12-17 | 2014-10-21 | Enpirion, Inc. | Power converter for a memory module |
| EP2602818A1 (en) * | 2011-12-09 | 2013-06-12 | Ipdia | An interposer device |
| US9509217B2 (en) | 2015-04-20 | 2016-11-29 | Altera Corporation | Asymmetric power flow controller for a power converter and method of operating the same |
| CN112533395B (zh) * | 2020-12-21 | 2021-12-24 | 北京同方信息安全技术股份有限公司 | 印制电路板中埋入电阻的方法及其印制电路板 |
| CN114190002A (zh) * | 2021-12-09 | 2022-03-15 | 上达电子（深圳）股份有限公司 | 一种柔性封装基板半埋入式厚铜精细线路的成型方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57145340A (en) * | 1981-03-05 | 1982-09-08 | Toshiba Corp | Manufacture of semiconductor device |
| US4415606A (en) * | 1983-01-10 | 1983-11-15 | Ncr Corporation | Method of reworking upper metal in multilayer metal integrated circuits |
| US4617193A (en) * | 1983-06-16 | 1986-10-14 | Digital Equipment Corporation | Planar interconnect for integrated circuits |
| US4584761A (en) * | 1984-05-15 | 1986-04-29 | Digital Equipment Corporation | Integrated circuit chip processing techniques and integrated chip produced thereby |
| JPS6140134A (ja) * | 1984-08-01 | 1986-02-26 | Tokyo Ink Kk | シ−トによるホツトメルト被覆方法 |
| JPS61140134A (ja) * | 1984-12-13 | 1986-06-27 | Toshiba Corp | 半導体装置の製造方法 |
| JPS63215056A (ja) * | 1987-03-04 | 1988-09-07 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| JPH0821559B2 (ja) * | 1988-02-12 | 1996-03-04 | 三菱電機株式会社 | 半導体集積回路装置の製造方法 |
| US5055425A (en) * | 1989-06-01 | 1991-10-08 | Hewlett-Packard Company | Stacked solid via formation in integrated circuit systems |
| US4952275A (en) * | 1989-12-15 | 1990-08-28 | Microelectronics And Computer Technology Corporation | Copper etching solution and method |
-
1991
- 1991-02-11 US US07/654,880 patent/US5187119A/en not_active Expired - Lifetime
-
1992
- 1992-02-10 WO PCT/US1992/001140 patent/WO1992014261A1/en not_active Ceased
- 1992-02-10 CA CA002101426A patent/CA2101426A1/en not_active Abandoned
- 1992-02-10 KR KR1019930702379A patent/KR930703699A/ko not_active Withdrawn
- 1992-02-10 EP EP92907235A patent/EP0571547A1/en not_active Withdrawn
- 1992-02-10 JP JP4507047A patent/JPH06505833A/ja active Pending
- 1992-02-11 CN CN92101596A patent/CN1029274C/zh not_active Expired - Fee Related
- 1992-02-11 TW TW081100926A patent/TW226052B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1992014261A1 (en) | 1992-08-20 |
| JPH06505833A (ja) | 1994-06-30 |
| EP0571547A1 (en) | 1993-12-01 |
| TW226052B (enExample) | 1994-07-01 |
| US5187119A (en) | 1993-02-16 |
| EP0571547A4 (enExample) | 1994-02-09 |
| CN1029274C (zh) | 1995-07-05 |
| CN1070287A (zh) | 1993-03-24 |
| KR930703699A (ko) | 1993-11-30 |
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| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |