CN102673076B - 带有保护薄膜的切割薄膜 - Google Patents

带有保护薄膜的切割薄膜 Download PDF

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Publication number
CN102673076B
CN102673076B CN201210061857.5A CN201210061857A CN102673076B CN 102673076 B CN102673076 B CN 102673076B CN 201210061857 A CN201210061857 A CN 201210061857A CN 102673076 B CN102673076 B CN 102673076B
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film
cutting
transmissivity
protective film
cutting film
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Expired - Fee Related
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CN201210061857.5A
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CN102673076A (zh
Inventor
宍户雄一郎
松村健
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Nitto Denko Corp
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Abstract

本发明提供可以缩短停机时间并且可以在不引起位置偏移的情况下在半导体晶片上粘贴切割薄膜的带有保护薄膜的切割薄膜。一种带有保护薄膜的切割薄膜，通过将切割薄膜与保护薄膜层叠而得到，其特征在于，所述保护薄膜对波长600～700nm的透射率与切割薄膜的薄膜检测用光最先透射的部分中带有保护薄膜的切割薄膜对波长600～700nm的透射率之差为20％以上。

Description

带有保护薄膜的切割薄膜
技术领域
本发明涉及带有保护薄膜的切割薄膜。
背景技术
以往，半导体晶片在预先以大面积制作后，切割(切断分离)为芯片状并移送到扩张工序。切割薄膜在该切割时用于固定半导体晶片。
固定到切割薄膜上的半导体晶片在切割为芯片状并为了将各芯片之间分离而在扩张环上沿面方向同样地扩张后，进行拾取。
另外，以往提出了在切割工序中胶粘保持半导体晶片并且也提供安装工序所需的芯片固着用胶粘剂层的切割薄膜(例如，参考专利文献1)。
上述的切割薄膜，按照半导体晶片的大小冲裁为圆形等，以规定的间隔设置到长尺寸的保护薄膜上，使用晶片安装装置等从保护薄膜上将切割薄膜剥离并且粘贴到半导体晶片上。此时，晶片安装装置，当薄膜检测用光的透射率变化时，即光的透射率从仅仅保护薄膜的透射率变为保护薄膜与切割薄膜的合计透射率时，判断检测到切割薄膜，将该位置作为切割薄膜的位置的基准，以不引起位置偏移的方式将半导体晶片粘贴到切割薄膜上。
现有技术文献
专利文献
专利文献1：日本特开昭60-57642号公报
发明内容
但是，以往的晶片安装装置存在如下问题：不能检测到保护薄膜上的切割薄膜，对于未检测到的切割薄膜而言，薄膜原样被移送而未被使用，此时产生停机时间。另外，存在如下问题：由于检测延迟，在产生位置偏移的状态下半导体晶片被粘贴到切割薄膜上。
本发明鉴于所述问题而创立，其目的在于提供可以缩短停机时间并且可以在不引起位置偏移的情况下将切割薄膜粘贴到半导体晶片上的带有保护薄膜的切割薄膜。
本申请发明人为了解决所述现有问题对带有保护薄膜的切割薄膜进行了研究。结果发现，通过采用下述的构成，可以缩短停机时间并且可以在不引起位置偏移的情况下将切割薄膜粘贴到半导体晶片上，从而完成了本发明。
即，本发明的带有保护膜的切割薄膜，通过将切割薄膜与保护薄膜层叠而得到，其特征在于，所述保护薄膜对波长600～700nm的透射率与所述切割薄膜的薄膜检测用光最先透射的部分中所述带有保护薄膜的切割薄膜对波长600～700nm的透射率之差为20％以上。
根据所述构成，所述保护薄膜对波长600～700nm的透射率与所述切割薄膜的薄膜检测用光最先透射的部分中所述带有保护薄膜的切割薄膜对波长600～700nm的透射率之差为20％以上，因此检测薄膜检测用光的传感器，能够可靠地检测从仅仅保护薄膜的透射率到包括切割薄膜的带有保护薄膜的切割薄膜的透射率的变化。结果，可以防止未检测到的切割薄膜被移送而未被使用，可以减少其间的停机时间。另外，可以防止由于检测延迟而在产生位置偏移的状态下半导体晶片被粘贴到切割薄膜上的情况，可以在不引起位置偏移的情况下将切割薄膜粘贴到半导体晶片上。
所述构成中，优选：所述切割薄膜具有基材和层叠在所述基材上的粘合剂层，所述基材进行了压花处理。所述基材上实施有压花处理时，可以更可靠地使仅仅保护薄膜的透射率与包括切割薄膜的带有保护薄膜的切割薄膜的透射率之差为20％以上。
所述构成中，优选：所述切割薄膜具有基材和层叠在所述基材上的粘合剂层，所述基材被着色。所述基材被着色时，可以更可靠地使仅仅保护薄膜的透射率与包括切割薄膜的带有保护薄膜的切割薄膜的透射率之差为20％以上。
所述构成中，优选：所述切割薄膜的薄膜检测用光最先透射的部分中所述带有保护薄膜的切割薄膜的透射率为0％～70％。所述透射率为0％～70％时，易于使所述透射率的差为20％以上。
所述构成中，优选：所述保护薄膜的透射率为75％～100％。所述透射率为75％～100％时，易于使所述透射率的差为20％以上。
所述构成中，优选：在所述切割薄膜的所述粘合剂层上，层叠有芯片接合薄膜。在切割薄膜的粘合剂层上层叠有芯片接合薄膜时，可以省略粘贴芯片接合薄膜的工序，可以提高制造效率。
附图说明
图1(a)是表示本发明的一个实施方式的带有保护薄膜的切割薄膜的示意剖视图，(b)为其俯视图。
图2是表示图1(a)和图1(b)所示的带有保护薄膜的切割薄膜的一部分的示意剖视图。
图3是表示另一实施方式的带有保护薄膜的切割薄膜的示意剖视图。
图4(a)、(b)是用于说明本实施方式的半导体装置的制造方法的示意剖视图。
图5是表示通过图1和图2所示的带有保护薄膜的切割薄膜中的胶粘剂层安装半导体芯片的一例的示意剖视图。
标号说明
1基材
2粘合剂层
3芯片接合薄膜
4半导体晶片
5半导体芯片
6被粘物
7焊线
8密封树脂
10、20带有保护薄膜的切割薄膜
11切割薄膜
14保护薄膜
15印刷层
具体实施方式
(带有保护薄膜的切割薄膜)
对于本发明的一个实施方式的带有保护薄膜的切割薄膜，以下进行说明。图1(a)是表示本发明的一个实施方式的带有保护薄膜的切割薄膜的示意剖视图，(b)为其俯视图。图2是表示图1(a)和图1(b)所示的带有保护薄膜的切割薄膜的一部分的示意剖视图。
如图1(a)、图1(b)所示，带有保护薄膜的切割薄膜10具有在长尺寸的保护薄膜14上层叠有俯视为圆形的切割薄膜11的构成。切割薄膜11具有在基材1上层叠有粘合剂层2的构成，在粘合剂层2上层叠有直径比切割薄膜11小的芯片接合薄膜3。切割薄膜11以使保护薄膜14与粘合剂层2和芯片接合薄膜3对向的方式层叠在保护薄膜14上。另外，本发明中，也可以不层叠有芯片接合薄膜。
带有保护薄膜的切割薄膜10，在半导体装置的制造工序中，沿一定方向(图1(b)中为左向)绕出，并且在保护薄膜14的宽度方向中央部分16照射薄膜检测用光L。此时，保护薄膜14对波长600～700nm的透射率T1(参考图1(a))与切割薄膜11的薄膜检测用光L最先透射的部分17中带有保护薄膜的切割薄膜10(本实施方式中，为保护薄膜14与切割薄膜11的层叠部分)对波长600～700nm的透射率T2(参考图1(a))之差为20％以上。所述透射率之差优选为20％以上且40％以下，更优选30％以上且40％以下。所述透射率之差为20％以上，因此检测薄膜检测用光的传感器可以可靠地识别从仅仅保护薄膜14的透射率T1到保护薄膜14与切割薄膜11的层叠部分的透射率T2的变化。结果，可以防止不能检测到的切割薄膜被移送而未被使用的情况，可以减少其间的停机时间。另外，可以在不引起位置偏移的情况下将切割薄膜粘贴到半导体芯片上。
透射率T1优选为75％～100％，更优选80％～100％，进一步优选85％～100％。透射率T1为75％～100％时，易于使所述透射率之差为20％以上。
透射率T2优选为0％～70％，更优选0％～65％，进一步优选0％～65％。透射率T2为0％～70％时，易于使所述透射率之差为20％以上。
所述基材1优选使用具有紫外线透射性的基材，其作为切割薄膜11的强度母体。可以列举例如：聚烯烃如低密度聚乙烯、线性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、无规共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等、乙烯-乙酸乙烯酯共聚物、离聚物树脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(无规、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚酯如聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等、聚碳酸酯、聚酰亚胺、聚醚醚酮、聚酰亚胺、聚醚酰亚胺、聚酰胺、全芳族聚酰胺、聚苯硫醚、芳族聚酰胺(纸)、玻璃、玻璃布、含氟树脂、聚氯乙烯、聚偏二氯乙烯、纤维素类树脂、聚硅氧烷树脂、金属(箔)、纸等。
另外，作为基材1的材料，可以列举所述树脂的交联体等聚合物。所述塑料薄膜可以不拉伸而使用，也可以根据需要进行单轴或双轴拉伸处理后使用。利用通过拉伸处理等而赋予了热收缩性的树脂片，通过在切割后使该基材1热收缩，可以减小粘合剂层2与芯片接合薄膜3的胶粘面积，从而可以容易地回收半导体芯片(半导体元件)。
基材1优选被着色。基材1被着色时，可以更可靠地使仅仅保护薄膜14的透射率T1与保护薄膜14与切割薄膜11的层叠部分的透射率T2之差为20％以上。在将基材1着色时，可以根据目标光的透射率使用色料(着色剂)。作为这样的色料，可以适合使用黑系色料、蓝系色料、红系色料等各种深色系色料，特别适合的是黑系色料。作为色料，可以是颜料、染料中的任意一种。色料可以单独使用或者两种以上组合使用。另外，作为染料，可以使用酸性染料、反应染料、直接染料、分散染料、阳离子染料等中的任意一种形态的染料。另外，颜料的形态没有特别限制，可以从公知的颜料中适当选择使用。
特别是使用染料作为色料时，由于在基材1中染料通过溶解成为均匀地或者基本均匀地分散的状态，因此可以容易地制造着色浓度均匀的基材1。
作为黑系色料，没有特别限制，可以从无机的黑系颜料、黑系染料中适当选择。另外，作为黑系色料，可以是混合有青色系色料(蓝绿系色料)、洋红色系色料(紫红系色料)和黄色系色料(黄系色料)的色料混合物。黑系色料可以单独使用或者两种以上组合使用。当然，黑系色料可以与黑色以外的颜色的色料组合使用。
具体而言，作为黑系色料，可以列举例如：炭黑(炉黑、槽法炭黑、乙炔黑、热裂法炭黑、灯黑等)、石墨、氧化铜、二氧化锰、偶氮类颜料(偶氮次甲基偶氮黑等)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁氧体(非磁性铁氧体、磁性铁氧体等)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬络合物、复合氧化物类黑色色素、蒽醌类有机黑色色系等。
本发明中，作为黑系色料，可以使用C.I.溶剂黑3、7、22、27、29、34、43、70、C.I.直接黑17、19、22、32、38、51、71、C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154、C.I.分散黑1、3、10、24等黑系染料；C.I.颜料黑1、7等黑系颜料等。
作为这样的黑系色料，例如，市售有商品名“Oil Black BY”、商品名“Oil Black BS”、商品名“Oil Black HBB”、商品名“Oil Black 803”、商品名“Oil Black 860”、商品名“Oil Black 5970”、商品名“Oil Black5906”、商品名“Oil Black 5905”(オリエント化学工业株式会社制造)等。
作为黑系色料以外的色料，可以列举例如：青系色料、洋红系色料、黄系色料等。作为青系色料，可以列举例如：C.I.溶剂蓝25、36、60、70、93、95；C.I.酸性蓝6、45等青系染料；C.I.颜料蓝1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66；C.I.还原蓝4、60；C.I.颜料绿7等青系颜料等。
另外，在洋红系色料中，作为洋红系染料，可以列举例如：C.I.溶剂红1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122；C.I.分散红9；C.I.溶剂紫8、13、14、21、27；C.I.分散紫1；C.I.碱性红1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40；C.I.碱性紫1、3、7、10、14、15、21、25、26、27、28等。
在洋红系色料中，作为洋红系颜料，可以列举例如：C.I.颜料红1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245；C.I.颜料紫3、9、19、23、31、32、33、36、38、43、50；C.I.还原红1、2、10、13、15、23、29、35等。
另外，作为黄系色料，可以列举例如：C.I.溶剂黄19、44、77、79、81、82、93、98、103、104、112、162等黄系染料；C.I.颜料橙31、43；C.I.颜料黄1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195；C.I.还原黄1、3、20等黄系颜料等。
青系色料、洋红系色料、黄系色料等各种色料，各种可以单独使用或者两种以上组合使用。另外，使用青系色料、洋红系色料、黄系色料等各种色料的两种以上的情况下，这些色料的混合比例(或者配合比例)没有特别限制，可以根据各色料的种类或目标光透射率等适当选择。
基材1的表面优选进行压花处理。对基材1进行压花处理时，可以更可靠地使仅仅保护薄膜14的透射率T1与保护薄膜14和切割薄膜11的层叠部分的透射率T2之差为20％以上。作为压花处理的方法，可以列举例如：使薄膜与压花辊贴合的方法、砂层处理方法、蚀刻等化学处理方法等。作为压花处理的标准，可以列举例如雾度值。基材1的表面的雾度值优选为10％～100％，更优选20％～100％，进一步优选30％～100％。通过将基材1的表面的雾度值调节为10％～100％，可以可靠地使透射率T1与透射率T2之差为20％以上。
另外，为了提高与邻接层的粘附性、保持性等，基材1的表面可以实施惯用的表面处理，例如，化学或物理处理如铬酸处理、臭氧暴露、火焰暴露、高压电击暴露、电离放射线处理等，利用底涂剂(例如后述的粘合物质)的涂布处理。所述基材1可以适当地选择使用同种或不同种类的材料，根据需要也可以使用将数种材料共混后的材料。
基材1的厚度没有特别限制，可以适当确定，一般为约5μm～约200μm。
作为粘合剂层2的形成中使用的粘合剂，没有特别限制，例如，可以使用丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏胶粘剂。作为所述压敏胶粘剂，从半导体晶片或玻璃等避忌污染的电子部件的超纯水或醇等有机溶剂的清洁洗涤性等的观点考虑，优选以丙烯酸类聚合物为基础聚合物的丙烯酸类粘合剂。
作为所述丙烯酸类聚合物，可以列举例如：使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、异丙酯、丁酯、异丁酯、仲丁酯、叔丁酯、戊酯、异戊酯、己酯、庚酯、辛酯、2-乙基己酯、异辛酯、壬酯、癸酯、异癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子数1～30、特别是碳原子数4～18的直链或支链烷基酯等)和(甲基)丙烯酸环烷酯(例如，环戊酯、环己酯等)中的一种或两种以上作为单体成分的丙烯酸类聚合物等。另外，(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙烯酸酯，本发明的(甲基)全部表示相同的含义。
为了改善凝聚力、耐热性等，所述丙烯酸类聚合物根据需要可以含有与能够同所述(甲基)丙烯酸烷基酯或环烷酯共聚的其它单体成分对应的单元。作为这样的单体成分，可以列举例如：含羧基单体如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸等；酸酐单体如马来酸酐、衣康酸酐等；含羟基单体如(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯、(甲基)丙烯酸(4-羟甲基环己基)甲酯等；含磺酸基单体如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧萘磺酸等；含磷酸基单体如丙烯酰磷酸-2-羟基乙酯等；丙烯酰胺、丙烯腈等。这些可共聚单体成分可以使用一种或两种以上。这些可共聚单体的使用量优选为全部单体成分的40重量％以下。
另外，为了进行交联，所述丙烯酸类聚合物根据需要也可以含有多官能单体等作为共聚用单体成分。作为这样的多官能单体，可以列举例如：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、氨基甲酸酯(甲基)丙烯酸酯等。这些多官能单体可以使用一种或两种以上。多官能单体的使用量从粘合特性等观点考虑优选为全部单体成分的30重量％以下。
所述丙烯酸类聚合物可以通过将单一单体或两种以上单体的混合物聚合来得到。聚合可以通过溶液聚合、乳液聚合、本体聚合、悬浮聚合等任意方式进行。从防止对洁净被粘物的污染等观点考虑，优选低分子量物质的含量少。从该点考虑，丙烯酸类聚合物的数均分子量优选为约30万以上，更优选约40万～约300万。
另外，为了提高作为基础聚合物的丙烯酸类聚合物等的数均分子量，所述粘合剂中也可以适当采用外部交联剂。外部交联方法的具体手段可以列举：添加多异氰酸酯化合物、环氧化合物、氮丙啶化合物、三聚氰胺类交联剂等所谓的交联剂使其反应的方法。使用外部交联剂时，其使用量根据与需要交联的基础聚合物的平衡以及作为粘合剂的使用用途适当确定。一般而言，相对于所述基础聚合物100重量份，优选配合约5重量份以下，更优选配合约0.1～约5重量份。另外，根据需要，在粘合剂中除所述成分以外也可以使用各种增粘剂、抗老化剂等添加剂。
粘合剂层2可以由辐射线固化型粘合剂形成。辐射线固化型粘合剂通过紫外线等辐射线的照射使交联度增大，从而可以容易地降低其粘合力。例如，通过仅对图2所示的粘合剂层2的与工件粘贴部分对应的部分2a照射辐射线，可以设置与部分2b的粘合力差。
另外，通过按照图2所示的芯片接合薄膜3使辐射线固化型粘合剂层2固化，可以容易地形成粘合力显著下降的所述部分2a。由于在固化且粘合力下降的所述部分2a上粘贴有芯片接合薄膜3，因此粘合剂层2的所述部分2a与芯片接合薄膜3的界面具有在拾取时容易剥离的性质。另一方面，未照射辐射线的部分具有充分的粘合力，形成所述部分2b。所述部分2b可以将贴片环(waferring)固定。
辐射线固化型粘合剂可以没有特别限制地使用具有碳碳双键等辐射线固化性官能团、并且显示粘合性的辐射线固化型粘合剂。作为辐射线固化型粘合剂，可以例示例如：在所述丙烯酸类粘合剂、橡胶类粘合剂等一般的压敏粘合剂中配合有辐射线固化性的单体成分或低聚物成分的添加型辐射线固化型粘合剂。
作为用于配合的辐射线固化性单体成分，可以列举例如：氨基甲酸酯低聚物、氨基甲酸酯(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、四羟甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇单羟基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1，4-丁二醇二(甲基)丙烯酸酯等。另外，辐射线固化性低聚物成分可以列举聚氨酯类、聚醚类、聚酯类、聚碳酸酯类、聚丁二烯类等各种低聚物，其分子量在约100～约30000的范围内是适当的。辐射线固化性单体成分或低聚物成分的配合量可以根据所述粘合剂层的种类适当地确定能够降低粘合剂层的粘合力的量。一般而言，相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份，例如为约5重量份～约500重量份，优选约40重量份～约150重量份。
另外，作为辐射线固化型粘合剂，除了前面说明的添加型辐射线固化型粘合剂以外，还可以列举使用在聚合物侧链或主链中或者主链末端具有碳碳双键的聚合物作为基础聚合物的内在型辐射线固化型粘合剂。内在型辐射线固化型粘合剂无需含有或者多数不含有作为低分子量成分的低聚物成分等，因此低聚物成分等不会随时间推移在粘合剂中迁移，从而可以形成稳定的层结构的粘合剂层，因此优选。
所述具有碳碳双键的基础聚合物，可以没有特别限制地使用具有碳碳双键并且具有粘合性的聚合物。作为这样的基础聚合物，优选以丙烯酸类聚合物作为基本骨架的聚合物。作为丙烯酸类聚合物的基本骨架，可以列举前面例示过的丙烯酸类聚合物。
在所述丙烯酸类聚合物中引入碳碳双键的方法没有特别限制，可以采用各种方法，但是，将碳碳双键引入聚合物侧链的方法在分子设计上比较容易。可以列举例如：预先将具有官能团的单体与丙烯酸类聚合物共聚后，使具有能够与该官能团反应的官能团和碳碳双键的化合物在保持碳碳双键的辐射线固化性的情况下进行缩合或加成反应的方法。
作为这些官能团的组合例，可以列举例如：羧基与环氧基、羧基与氮丙啶基、羟基与异氰酸酯基等。这些官能团的组合中考虑反应跟踪的容易性，优选羟基与异氰酸酯基的组合。另外，如果是通过这些官能团的组合而生成所述具有碳碳双键的丙烯酸类聚合物的组合，则官能团可以在丙烯酸类聚合物与所述化合物中的任意一方上，在所述的优选组合中，优选丙烯酸类聚合物具有羟基、所述化合物具有异氰酸酯基的情况。此时，作为具有碳碳双键的异氰酸酯化合物，可以列举例如：甲基丙烯酰异氰酸酯、2-甲基丙烯酰氧乙基异氰酸酯、间异丙烯基-α，α-二甲基联苯酰异氰酸酯等。另外，作为丙烯酸类聚合物，可以使用将前面例示的含羟基单体或2-羟基乙基乙烯基醚、4-羟基丁基乙烯基醚、二乙二醇单乙烯基醚的醚类化合物等共聚而得到的聚合物。
所述内在型辐射线固化型粘合剂可以单独使用所述具有碳碳双键的基础聚合物(特别是丙烯酸类聚合物)，也可以在不损害特性的范围内配合所述辐射线固化性单体成分或低聚物成分。辐射线固化性低聚物成分等相对于基础聚合物100重量份通常在30重量份的范围内，优选0～10重量份的范围。
所述辐射线固化型粘合剂在通过紫外线等固化时可以含有光聚合引发剂。作为光聚合引发剂，可以列举例如：α-酮醇类化合物如4-(2-羟基乙氧基)苯基(2-羟基-2-丙基)酮、α-羟基-α，α’-二甲基苯乙酮、2-甲基-2-羟基苯丙酮、1-羟基环己基苯基酮等；苯乙酮类化合物如甲氧基苯乙酮、2，2-二甲氧基-2-苯基苯乙酮、2，2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-吗啉基)丙烷-1-酮等；苯偶姻醚类化合物如苯偶姻乙醚、苯偶姻异丙醚、茴香偶姻甲基醚等；缩酮类化合物如联苯酰二甲基缩酮等；芳香族磺酰氯类化合物如2-萘磺酰氯等；光活性肟类化合物如1-苯基-1，2-丙烷二酮-2-(O-乙氧基羰基)肟等；二苯甲酮类化合物如二苯甲酮、苯甲酰苯甲酸、3，3’-二甲基-4-甲氧基二苯甲酮等；噻吨酮类化合物如噻吨酮、2-氯噻吨酮、2-甲基噻吨酮、2，4-二甲基噻吨酮、异丙基噻吨酮、2，4-二氯噻吨酮、2，4-二乙基噻吨酮、2，4-二异丙基噻吨酮等；樟脑醌；卤代酮；酰基膦氧化物；酰基膦酸酯等。光聚合引发剂的配合量相对于构成粘合剂的丙烯酸类聚合物等基础聚合物100重量份，例如为约0.05重量份～约20重量份。
另外，作为辐射线固化型粘合剂，可以列举例如：日本特开昭60-196956号公报中所公开的、含有具有2个以上不饱和键的加成聚合性化合物、具有环氧基的烷氧基硅烷等光聚合性化合物、和羰基化合物、有机硫化合物、过氧化物、胺、盐类化合物等光聚合引发剂的橡胶类粘合剂或丙烯酸类粘合剂等。
可以在粘合剂层2中添加色料代替在基材1中添加色料，或者可以除了在基材1中添加色料以外还在粘合剂层2中添加色料。作在粘合剂层2中添加的色料，可以使用与上述在基材1中添加的色料同样的色料。作为色料的添加方法，可以列举例如：在粘合剂组合物溶液中溶解或分散色料的方法。
通过辐射线固化型粘合剂形成粘合剂层2的情况下，可以对粘合剂层2的一部分进行辐射线照射使得粘合剂层2中所述部分2a的粘合力＜其它部分2b的粘合力。
作为在所述粘合剂层2中形成所述部分2a的方法，可以列举：在支撑基材1上形成辐射线固化型粘合剂层2后，对所述部分2a局部地照射辐射线使其固化的方法。局部的辐射线照射可以通过形成有与所述部分2a以外的部分对应的图案的光掩模来进行。另外，可以列举点状照射紫外线进行固化的方法等。辐射线固化型粘合剂层2的形成可以通过将设置在隔片上的辐射线固化型粘合剂层转印到支撑基材1上来进行。局部的辐射线照射也可以对设置在隔片上的辐射线固化型粘合剂层2进行。
另外，通过辐射线固化型粘合剂形成粘合剂层2的情况下，可以使用对支撑基材1的至少单面的、与所述部分2a对应的部分以外的部分的全部或局部进行遮光的基材，在该基材上形成辐射线固化型粘合剂层2后进行辐射线照射，使所述部分2a固化，从而形成粘合力下降的所述部分2a。作为遮光材料，可以通过印刷或蒸镀等在支撑薄膜上制作能够成为光掩模的材料。通过所述制造方法，可以有效地制造带有保护薄膜的切割薄膜10。
另外，照射辐射线时因氧产生固化障碍的情况下，期望利用任意方法从辐射线固化型粘合剂层2的表面隔绝氧(空气)。可以列举例如：用隔片将所述粘合剂层2的表面覆盖的方法或者在氮气氛围中进行紫外线等辐射线的照射的方法等。
粘合剂层2的厚度没有特别限制，从同时实现防止芯片切割面的缺陷和胶粘层的固定保持等观点考虑，优选为约1μm至约50μm。优选2μm～30μm、更优选5μm～25μm。
芯片接合薄膜3的层叠结构，如本实施方式所示，可以列举仅由胶粘剂层的单层构成的结构或者在芯材的单面或两面形成有胶粘剂层的多层结构。作为所述芯材，可以列举例如：薄膜(例如，聚酰亚胺薄膜、聚酯薄膜、聚对苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂衬底、硅衬底或玻璃衬底等。
作为构成芯片接合薄膜3的胶粘剂组合物，可以列举将热塑性树脂和热固性树脂组合使用而得到的组合物。
作为所述热固性树脂，可以列举：酚醛树脂、氨基树脂、不饱和聚酯树脂、环氧树脂、聚氨酯树脂、聚硅氧烷树脂或热固性聚酰亚胺树脂等。这些树脂可以单独使用或者两种以上组合使用。特别优选腐蚀半导体元件的离子性杂质等的含量少的环氧树脂。另外，作为环氧树脂的固化剂，优选酚醛树脂。
所述环氧树脂，只要是通常作为胶粘剂组合物使用的环氧树脂则没有特别限制，可以使用例如：双酚A型、双酚F型、双酚S型、溴化双酚A型、氢化双酚A型、双酚AF型、联苯型、萘型、芴型、苯酚酚醛清漆型、邻甲酚酚醛清漆型、三(羟苯基)甲烷型、四(羟苯基)乙烷型等双官能环氧树脂或多官能环氧树脂、或者乙内酰脲型、异氰脲酸三缩水甘油酯型或缩水甘油胺型等环氧树脂。这些环氧树脂可以单独使用或者两种以上组合使用。这些环氧树脂中，特别优选酚醛清漆型环氧树脂、联苯型环氧树脂、三(羟苯基)甲烷型环氧树脂或四(羟苯基)乙烷型环氧树脂。这是因为：这些环氧树脂与作为固化剂的酚醛树脂的反应性好，并且耐热性等优良。
所述酚醛树脂作为所述环氧树脂的固化剂起作用，可以列举例如：苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂、苯酚联苯树脂、壬基苯酚酚醛清漆树脂等酚醛清漆型酚醛树脂、甲阶酚醛树脂(レゾ一ル)型酚醛树脂、聚对羟基苯乙烯等聚羟基苯乙烯等。这些酚醛树脂可以单独使用或者两种以上组合使用。这些酚醛树脂中特别优选苯酚酚醛清漆树脂、苯酚芳烷基树脂。这是因为可以提高半导体装置的连接可靠性。
所述环氧树脂与酚醛树脂的配合比例，例如，以相对于所述环氧树脂成分中的环氧基1当量酚醛树脂中的羟基为0.5～2.0当量的方式进行配合是适当的。另外，更合适的是0.8～1.2当量。即，这是因为：两者的配合比例在所述范围以外时，不能进行充分的固化反应，从而环氧树脂固化物的特性容易劣化。
作为所述热塑性树脂，可以列举：天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、尼龙6或尼龙66等聚酰胺树脂、苯氧基树脂、丙烯酸类树脂、PET或PBT等饱和聚酯树脂、聚酰胺酰亚胺树脂、或者含氟树脂等。这些热塑性树脂可以单独使用或者两种以上组合使用。这些热塑性树脂中，特别优选离子性杂质少、耐热性高、能够确保半导体元件的可靠性的丙烯酸类树脂。
作为所述丙烯酸类树脂，没有特别限制，可以列举：以一种或两种以上具有碳原子数30以下、特别是碳原子数4～18的直链或支链烷基的丙烯酸酯或甲基丙烯酸酯为成分的聚合物(丙烯酸类聚合物)等。作为所述烷基，可以列举例如：甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、环己基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者二十烷基等。
另外，作为用于形成所述聚合物的其它单体，没有特别限制，可以列举例如：含缩水甘油基单体如丙烯酸缩水甘油酯、甲基丙烯酸缩水甘油酯等；含羧基单体如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸或巴豆酸等；酸酐单体如马来酸酐或衣康酸酐等；含羟基单体如(甲基)丙烯酸-2-羟基乙酯、(甲基)丙烯酸-2-羟基丙酯、(甲基)丙烯酸-4-羟基丁酯、(甲基)丙烯酸-6-羟基己酯、(甲基)丙烯酸-8-羟基辛酯、(甲基)丙烯酸-10-羟基癸酯、(甲基)丙烯酸-12-羟基月桂酯或丙烯酸(4-羟甲基环己基)甲酯等；含磺酸基单体如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯酰氧基萘磺酸等；含磷酸基单体如丙烯酰磷酸-2-羟基乙酯；苯乙烯单体；或者丙烯腈。
另外，芯片接合薄膜3中，根据其用途可以适当配合填料。填料的配合可以赋予导电性或提高导热性、调节弹性模量等。作为所述填料，可以列举无机填料和有机填料，从提高操作性、提高热电导性、调节熔融粘度、赋予触变性等特性的观点考虑，优选无机填料。作为所述无机填料，没有特别限制，可以列举例如：氢氧化铝、氢氧化镁、碳酸钙、碳酸镁、硅酸钙、硅酸镁、氧化钙、氧化镁、氧化铝、氮化铝、硼酸铝晶须、氮化硼、结晶二氧化硅、非晶二氧化硅等。这些填料可以单独使用或者两种以上组合使用。从提高热电导性的观点考虑，优选氧化铝、氮化铝、氮化硼、结晶二氧化硅、非晶二氧化硅。另外，从上述各特性平衡良好的观点考虑，优选结晶二氧化硅或非晶二氧化硅。另外，为了赋予导电性、提高热电导性等，也可以使用导电性物质(导电填料)作为无机填料。作为导电填料，可以列举将银、铝、金、铜、镍、导电性合金等形成为球形、针状、薄片状而得到的金属粉、氧化铝等金属氧化物、无定形炭黑、石墨等。所述填料的平均粒径可以为0.1～80μm。另外，所述填料的平均粒径例如为通过光度式粒度分布计(HORIBA制造，装置名：LA-910)求出的值。
所述填料的配合量，相对于热固性树脂成分、热塑性树脂成分和填料的合计100重量份优选为5重量份以上，更优选100重量份以上且500重量份以下，进一步优选200重量份以上且400重量份以下。
另外，芯片接合薄膜3中，除了所述填料以外，根据需要还可以适当配合其它添加剂。作为其它添加剂，可以列举例如：阻燃剂、硅烷偶联剂或离子捕获剂等。作为所述阻燃剂，可以列举例如：三氧化二锑、五氧化二锑、溴化环氧树脂等。这些阻燃剂可以单独使用或者两种以上组合使用。作为所述硅烷偶联剂，可以列举例如：β-(3，4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧基丙基三甲氧基硅烷、γ-环氧丙氧基丙基甲基二乙氧基硅烷等。这些化合物可以单独使用或者两种以上组合使用。作为所述离子捕获剂，可以列举例如：水滑石类、氢氧化铋等。这些离子捕获剂可以单独使用或者两种以上组合使用。
芯片接合薄膜3的厚度(层叠体的情况下为总厚度)没有特别限制，例如，可以从1～200μm的范围内选择，优选5～100μm，更优选10～80μm。
保护薄膜14具有在供给实际应用之前作为保护芯片接合薄膜3的保护材料的功能等。另外，保护薄膜14也可以作为将芯片接合薄膜3向粘合剂层2转印时的支撑基材使用。保护薄膜14在向芯片接合薄膜3上粘贴工件时剥离。作为保护薄膜14的材质，可以列举聚对苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用含氟型剥离剂、长链烷基丙烯酸酯型剥离剂等剥离剂进行表面涂布后的塑料薄膜或纸等。
本实施方式的带有保护薄膜的切割薄膜10，例如可以如下制作。
首先，基材1可以通过现有公知的制膜方法制膜。作为该制膜方法，可以例示例如：压延制膜法、有机溶剂中的流延法、密闭体系中的吹塑挤出法、T形模头挤出法、共挤出法、干式层压法等。将基材1着色的情况下，添加上述的色料。
然后，在基材1上涂布粘合剂组合物溶液形成涂膜，然后在规定条件下将该涂膜干燥(根据需要进行加热交联)而形成粘合剂层2。作为涂布方法，没有特别限制可以列举例如：辊涂、丝网涂布、凹版涂布等。另外，作为干燥条件，可以在例如：在干燥温度80～150℃、干燥时间0.5～5小时的范围内进行。另外，也可以在隔片上涂布粘合剂组合物形成涂膜后在所述干燥条件下将涂膜干燥来形成粘合剂层2。在将粘合剂层2着色的情况下，在上所述粘合剂组合物溶液中添加上述色料。然后，将粘合剂层2与隔片一起粘贴到基材1上。由此，制作切割薄膜11。
芯片接合薄膜3例如如下制作。
首先，制作作为芯片接合薄膜3的形成材料的胶粘剂组合物溶液。在该胶粘剂组合物溶液中，如前所述，配合有所述胶粘剂组合物、填料、其它各种添加剂等。
然后，在基材隔片上以达到规定厚度的方式涂布胶粘剂组合物溶液形成涂膜。在规定条件下将涂膜干燥，形成胶粘剂层。作为涂布方法没有特别限制，可以列举例如：辊涂、丝网涂布、凹版涂布等。另外，作为干燥条件，例如在干燥温度70～160℃、干燥时间1～5分钟的范围内进行。另外，可以在隔片上涂布粘合剂组合物溶液形成涂膜后，在所述干燥条件下干燥涂膜而形成胶粘剂层。然后，将胶粘剂层与隔片一起粘贴到基材隔片上。
接着，从切割薄膜11和芯片接合薄膜3上各自将隔片剥离，并以芯片接合薄膜3和粘合剂层2为粘贴面的方式将两者粘贴。粘贴例如通过压接进行。此时，层压温度没有特别限制，通常优选30～50℃，更优选35～45℃。另外，线压也没有特别限制，例如优选0.1～20kgf/cm，更优选1～10kgf/cm。然后，将芯片接合薄膜3上的基材隔片剥离，与保护薄膜14粘贴，由此可以得到本实施方式的带有保护薄膜的切割薄膜10。本实施方式中，使用长尺寸的保护薄膜14，并在保护薄膜14上以规定的间隔粘贴多个切割薄膜(粘贴有芯片接合薄膜3的切割薄膜11)。
图3是表示另一实施方式的带有保护薄膜的切割薄膜的示意剖视图。
对于基材1而言，如图3所示的带有保护薄膜的切割薄膜20所示，在基材1与粘合剂层2之间可以设置印刷层15。设置印刷层15时，可以更可靠地使仅仅保护薄膜14的透射率与包含切割薄膜11的带有保护薄膜的切割薄膜20的透射率之差为20％以上。
印刷层15例如可以通过凸版印刷法、平版印刷法、凹版印刷法、孔版印刷法等印刷法形成。此时，作为印刷层15中使用的色料(着色剂)，可以使用与上述同样的色料。
(半导体装置的制造方法)
以下，参考图4(a)、图4(b)和图5以使用带有保护薄膜的切割薄膜10的情况为例进行说明。图4(a)、图4(b)是用于说明本实施方式的半导体装置的制造方法的示意剖视图。图5是表示通过图1和图2所示的带有保护薄膜的切割薄膜中的胶粘剂层安装半导体芯片的例子的示意剖视图。
如图4(a)所示，带有保护薄膜的切割薄膜10沿一定方向(图4(a)中为左向)绕出，并将薄膜检测用光L照射到保护薄膜14的宽度方向中央部分。图4(a)中，光L仅透过保护薄膜14，透射的光L通过未图示的传感器检测，计算透射率。此时的透射率为透射率T 1。
然后，将带有保护薄膜的切割薄膜10进一步绕出时，如图4(b)所示，光L透过保护薄膜14与切割薄膜11的层叠部分。透射的光通过未图示的传感器检测，计算透射率。此时的透射率为透射率T2。
薄膜检测用光优选波长600～700nm，更优选波长620～680nm，进一步优选波长640～660nm。
对于传感器而言，在透射率变化20％以上时，即透射率从透射率T1变化到透射率T2时，判断为检测到保护薄膜14上的切割薄膜11。而且，晶片安装装置基于该检测结果识别切割薄膜11的位置，从保护薄膜14上将切割薄膜11剥离并压接半导体晶片4(粘贴工序)。本工序利用压接辊等挤压手段挤压来进行。安装时的粘贴温度没有特别限制，优选例如在20～80℃的范围内。本实施方式中，透射率T1与透射率T2之差为20％以上，因此传感器可以可靠地识别仅仅保护薄膜14的透射率T1到保护薄膜14与切割薄膜11的层叠部分的透射率T2的变化。结果，可以防止未检测到的切割薄膜被移送而未被使用，可以减少其间的停机时间。另外，可以在不引起位置偏移的情况下将切割薄膜粘贴到半导体晶片上。
然后，进行半导体晶片4的切割。由此，将半导体晶片4切割为规定尺寸而小片化，制作半导体芯片5(参考图5)。切割例如按照常规方法从半导体晶片4的电路面一侧进行。另外，本工序中，例如，可以采用切入到芯片接合薄膜3的、称为全切割的切割方式等。本工序中使用的切割装置没有特别限制，可以采用现有公知的切割装置。另外，半导体晶片4由带有芯片接合薄膜3的切割薄膜11胶粘固定，因此可以抑制芯片缺损或芯片飞散，并且可以抑制半导体晶片4的破损。
为了剥离由带有芯片接合薄膜3的切割薄膜11胶粘固定的半导体芯片5，进行半导体芯片5的拾取。拾取方法没有特别限制，可以采用现有公知的各种方法。可以列举例如：用针将各个半导体芯片5从切割薄膜11一侧上推，并利用拾取装置拾取上推的半导体芯片5的方法等。
在此，粘合剂层2为紫外线固化型的情况下，在对该粘合剂层2照射紫外线后进行拾取。由此，粘合剂层2对芯片接合薄膜3的粘合力下降，使半导体芯片5容易剥离。结果，可以在不损伤半导体芯片5的情况下进行拾取。紫外线照射时的照射强度、照射时间等条件没有特别限制，可以根据需要适当设定。另外，作为紫外线照射时使用的光源，可以使用所述的光源。
拾取的半导体芯片5通过芯片接合薄膜3胶粘固定到被粘物6上(芯片接合)。作为被粘物6，可以列举引线框、TAB薄膜、衬底或者独立制作的半导体芯片等。被粘物6例如可以是容易变形的变形型被粘物，也可以是难以变形的非变形型被粘物(半导体晶片等)。
作为所述衬底，可以使用现有公知的衬底。另外，所述引线框可以使用Cu引线框、42合金引线框等金属引线框或包含玻璃环氧、BT(双马来酰亚胺-三嗪)、聚酰亚胺等的有机衬底。但是，本发明不限于此，也包含安装半导体元件并与半导体元件电连接后可以使用的电路衬底。
芯片接合薄膜3为热固化型时，通过加热固化，将半导体芯片5胶粘固定在被粘物6上，使耐热强度提高。可以在加热温度为80～200℃、优选100～175℃、更优选100～140℃下进行。另外，可以在加热时间为0.1～24小时、优选0.1～3小时、更优选0.2～1小时下进行。另外，通过芯片接合薄膜3将半导体芯片5胶粘固定到衬底等上而得到的材料可以供给回流焊接工序。
热固化后的芯片接合薄膜3对被粘物6的剪切胶粘力优选为0.2MPa以上，更优选0.2～10MPa。芯片接合薄膜3的剪切胶粘力为至少0.2MPa以上时，在丝焊工序时，不会因该工序中的超声波振动或加热而在芯片接合薄膜3与半导体芯片5或被粘物6的胶粘面上产生剪切变形。即，半导体元件不会因丝焊时的超声波振动而活动，由此，可以防止丝焊的成功率下降。
另外，本实施方式的半导体装置的制造方法，可以在不经过芯片接合薄膜3的利用加热处理进行的热固化工序的情况下进行丝焊，再用密封树脂将半导体芯片5密封，并将该密封树脂后固化。此时，芯片接合薄膜3暂时固着时对被粘物6的剪切胶粘力优选为0.2MPa以上，更优选0.2～10MPa。芯片接合薄膜3暂时固着时的剪切胶粘力为至少0.2MPa以上时，即使在不经过加热工序的情况下进行丝焊工序，也不会因该工序中的超声波振动或加热而在芯片接合薄膜3与半导体芯片5或被粘物6的胶粘面上产生剪切变形。即，半导体元件不会因丝焊时的超声波振动而活动，由此，可以防止丝焊的成功率下降。
所述丝焊是利用焊线7将被粘物6的端子部(内部引线)的末端与半导体芯片5上的电极焊盘(未图示)电连接的工序。作为所述焊线7，可以使用例如：金线、铝线或铜线等。进行丝焊时的温度在80～250℃、优选80～220℃的范围内进行。另外，其加热时间进行几秒～几分钟。线路连接是在所述温度范围内加热的状态下，通过组合使用超声波振动能和施加的压力而产生的压接能来进行。本工序可以在不进行芯片接合薄膜3的热固化的情况下进行。
所述密封工序是利用密封树脂8将半导体芯片5密封的工序。本工序是为了保护搭载在被粘物6上的半导体芯片5或焊线7而进行的。本工序通过用模具将密封用的树脂成型来进行。作为密封树脂8，例如可以使用环氧类树脂。树脂密封时的加热温度通常在175℃下进行60～90秒，但是，本发明不限于此，例如，也可以在165～185℃下固化几分钟。由此，在使密封树脂固化的同时通过芯片接合薄膜3将半导体芯片5与被粘物6固着。即，本发明中，即使在不进行后述的后固化工序的情况下，本工序中也可以利用芯片接合薄膜3进行固着，从而可以有助于减少制造工序数及缩短半导体装置的制造时间。
所述后固化工序中，使在所述密封工序中固化不足的密封树脂8完全固化。即使在密封工序中芯片接合薄膜3未完全热固化的情况下，在本工序中也可以与密封树脂8一起实现芯片接合薄膜3的完全热固化。本工序中的加热温度因密封树脂的种类而异，例如，在165～185℃的范围内，加热时间为约0.5小时～约8小时。
在上述实施方式中，对于芯片接合薄膜的直径小于切割薄膜的直径的情况进行了说明，但是，本发明不限于该例，芯片接合薄膜的直径也可以与切割薄膜的直径相同或大于切割薄膜的直径。此时，切割薄膜的薄膜检测用光最先透射的部分，为切割薄膜与芯片接合薄膜层叠的部分。即，此时，切割薄膜的薄膜检测光最先透射的部分中带有保护薄膜的切割薄膜的透射率相当于保护薄膜与切割薄膜以及芯片接合薄膜的层叠体的透射率。此时，芯片接合薄膜对波长600～700nm的透射率优选为50％～80％。另外，芯片接合薄膜与切割薄膜的透射率之差优选为10％以上。另外，芯片接合薄膜与保护薄膜的透射率之差优选为10％以上。
上述实施方式中，对于通过整个切割薄膜11被着色、整个切割薄膜11上设置有印刷层、或者切割薄膜11的基材1的整个面进行了压花处理，由此透射率T1与透射率T2之差为20％以上的情况进行了说明。但是，本发明不限于该例，关于所述透射率之差，只要保护薄膜的透射率与切割薄膜的薄膜检测用光最先透射的部分中带有保护薄膜的切割薄膜的透射率之差为20％以上即可，例如，与保护薄膜的透射率的透射率之差为20％以上的部分也可以仅仅是离切割薄膜的薄膜检测用光最先透射的部分(例如，图1的部分17)沿薄膜的运送方向具有规定距离(例如，100μm～500μm)的部分。采用这样的构成时，例如，只要将所述透射率之差为20％以上的部分着色即可。
实施例
以下，例示性地详细说明本发明的优选实施例。但是，该实施例中记载的材料、配合量等如果不是特别限定的记载，则本发明的要旨不仅仅限于此。另外，以下提到“份”时是指“重量份”。
(切割薄膜的粘合剂层的制作)
在乙酸乙酯中通过常规方法将丙烯酸丁酯70份、丙烯酸乙酯30份、丙烯酸5份共聚，得到重均分子量80万的丙烯酸类聚合物。然后，在该丙烯酸类聚合物100份中，配合作为交联剂的多官能环氧化合物(三菱瓦斯化学株式会社制造，制品名：“TETRAD-C”)8份、作为光聚合引发剂的1-羟基环己基苯基酮7份，将它们在作为有机溶剂的甲苯中均匀溶解，得到浓度30重量％的丙烯酸类粘合剂组合物溶液。将该丙烯酸类粘合剂组合物溶液涂布到表1、表2所示的各实施例、各比较例的基材面上使得厚度为10μm，并在120℃干燥3分钟。然后，通过掩模仅对将要粘贴半导体晶片的部分照射紫外线500mJ/cm2，得到将要粘贴半导体晶片的部分被紫外线固化的切割薄膜。另外，实施例1的基材(PP(聚丙烯))为由フタムラ化学株式会社制造的制品名“FVHK-LB#40N100”的材料。实施例2的基材(PP(聚丙烯))为由フタムラ化学株式会社制造的制品名“FBS-LB#40S-400X”的材料。实施例3的基材(PO(聚烯烃))是由三井化学株式会社制造的制品名“TPX”的材料。实施例4的基材(PVC(聚氯乙烯))是由日东电工株式会社制造的制品名“SPV-M4001”的材料。实施例5的基材(PVC(聚氯乙烯))是由日东电工株式会社制造的制品名“SPV-320”的材料。比较例1的基材(PET(聚对苯二甲酸乙二醇酯))是由三菱树脂株式会社制造的制品名“MRA-38”的材料。比较例2的基材(PET(聚对苯二甲酸乙二醇酯))是由三菱树脂株式会社制造的制品名“MRF-50”的材料。
(芯片接合薄膜的制作)
将下述(a)～(d)溶解到甲乙酮中，得到浓度23.6重量％的胶粘剂组合物溶液。
(a)环氧树脂(JER株式会社制造，エピコ一ト1001)32重量份
(b)酚醛树脂(三井化学株式会社制造，ミレツクスXLC-4L)34重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯类聚合物(ナガセケムテツクス株式会社制造，SG-708-6)100重量份
(d)球形二氧化硅(アドマテツクス株式会社制造，SO-25R)110重量份
将该胶粘剂组合物溶液涂布到聚硅氧烷脱模处理后的厚度100μm的聚对苯二甲酸乙二醇酯薄膜构成的脱模处理薄膜(剥离衬垫)上，然后在120℃干燥3分钟。由此，制作厚度10μm的芯片接合薄膜。
(带有保护薄膜的切割薄膜的制作)
将制作的各实施例、各比较例的切割薄膜各自冲裁为直径370mm的圆形。然后，将制作的芯片接合薄膜冲裁为直径320mm的圆形，并转印到各切割薄膜上。转印以使切割薄膜的粘合剂层与芯片接合薄膜对向的方式进行。然后，将聚硅氧烷脱模处理后的厚度35μm的聚对苯二甲酸乙二醇酯薄膜保护薄膜粘贴到芯片接合薄膜侧，得到本实施例、本比较例的带有保护薄膜的切割薄膜。
(透射率的测定)
透射率的测定中，使用日本分光公司制造的分光光度计(制品名“V-670”)，将测定模式设定为％T(透射率测定)、测定波长区域设定为190～800nm来进行。将此时的波长650nm下的透射率作为测定值。结果，保护薄膜的波长650nm下的透射率为88.8％。另外，切割薄膜的波长650nm下的透射率(％)、保护薄膜与切割薄膜的层叠部分的透射率(％)如表1和表2所示。另外，表1和表2中示出了保护薄膜与切割薄膜的层叠部分的透射率与保护薄膜的透射率之差。
(传感器识别性)
使用检测保护薄膜上的切割薄膜的传感器和将检测到的切割薄膜从保护薄膜上剥离并粘贴半导体晶片的晶片安装装置，进行传感器识别性试验。将传感器识别切割薄膜并且可以进行晶片安装的情况评价为○，将没有识别切割薄膜并且不能进行晶片安装的情况评价为×。结果如表1和表2所示。
<传感器的条件>
传感器：キ一エンス公司制造的LV-11SB
传感头：线性光回归反射型(型号：LV-S62)
检测距离：50mm
<粘贴条件>
晶片安装装置：日东精机公司制造：MA-3000III
粘贴速度：10mm/秒
绕出速度：10mm/秒
(雾度值)
对于实施例3的基材，测定雾度值。雾度值的测定具体而言利用雾度计(“NDH2000”，日本电色工业株式会社制造)进行。
雾度(％)＝Td/Tt×100
Td：扩散透射率
Tt：总光线透射率
结果如表1所示。
表1
表2
(结果)
从表1、表2的结果可以看出，保护薄膜与切割薄膜的层叠部分的透射率与保护薄膜的透射率之差为20％以上时，可以利用传感器识别切割薄膜。

Claims (4)

1.一种带有保护薄膜的切割薄膜，通过将切割薄膜与保护薄膜层叠而得到，其特征在于，
所述保护薄膜对波长600～700nm的透射率与所述切割薄膜的薄膜检测用光最先透射的部分中所述带有保护薄膜的切割薄膜对波长600～700nm的透射率之差为20％以上，
所述切割薄膜的薄膜检测用光最先透射的部分中所述带有保护薄膜的切割薄膜的透射率为0％～70％，
所述保护薄膜的透射率为75％～100％。
2.如权利要求1所述的带有保护薄膜的切割薄膜，其特征在于，
所述切割薄膜具有基材和层叠在所述基材上的粘合剂层，
所述基材进行了压花处理。
3.如权利要求1所述的带有保护薄膜的切割薄膜，其特征在于，
所述切割薄膜具有基材和层叠在所述基材上的粘合剂层，
所述基材被着色。
4.如权利要求1至3中任一项所述的带有保护薄膜的切割薄膜，其特征在于，
在所述切割薄膜的所述粘合剂层上，层叠有芯片接合薄膜。
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