TWI433230B - 帶有保護薄膜的切割薄膜 - Google Patents

帶有保護薄膜的切割薄膜 Download PDF

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Publication number
TWI433230B
TWI433230B TW102136133A TW102136133A TWI433230B TW I433230 B TWI433230 B TW I433230B TW 102136133 A TW102136133 A TW 102136133A TW 102136133 A TW102136133 A TW 102136133A TW I433230 B TWI433230 B TW I433230B
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Taiwan
Prior art keywords
film
pigment
dicing
transmittance
protective film
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TW102136133A
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English (en)
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TW201403701A (zh
Inventor
Yuichiro Shishido
Takeshi Matsumura
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Nitto Denko Corp
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Publication of TW201403701A publication Critical patent/TW201403701A/zh
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Publication of TWI433230B publication Critical patent/TWI433230B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B32B27/365—Layered products comprising a layer of synthetic resin comprising polyesters comprising polycarbonates
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/385—Acrylic polymers
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Description

帶有保護薄膜的切割薄膜
本發明是關於帶有保護薄膜的切割薄膜。
以往，半導體晶圓在預先以大面積製作後，切割(切斷分離)為晶片狀並移送到擴張製程。切割薄膜在該切割時用於固定半導體晶圓。
固定到切割薄膜上的半導體晶圓在切割為晶片狀並為了將各晶片之間分離而在擴張環上沿面方向同樣地擴張後，進行拾取。
另外，以往提出了在切割製程中接著保持半導體晶圓並且也提供安裝製程所需的晶片固著用接著劑層的切割薄膜(例如，參考專利文獻1)。
上述的切割薄膜，按照半導體晶圓的大小沖裁為圓形等，以規定的間隔設置到長尺寸的保護薄膜上，使用晶圓安裝裝置等從保護薄膜上將切割薄膜剝離並且黏貼到半導體晶圓上。此時，當薄膜檢測用光的透射率變化時，即光的透射率從僅僅保護 薄膜的透射率變為保護薄膜與切割薄膜的合計透射率時，晶圓安裝裝置判斷檢測到切割薄膜，將該位置作為切割薄膜的位置的基準，以不引起位置偏移的方式將半導體晶圓黏貼到切割薄膜上。
先前技術文獻
專利文獻
專利文獻1：日本特開昭60-57642號公報
但是，以往的晶圓安裝裝置存在如下問題：不能檢測到保護薄膜上的切割薄膜，對於未檢測到的切割薄膜而言，薄膜原樣被移送而未被使用，此時產生停機時間。另外，存在如下問題：由於檢測延遲，在產生位置偏移的狀態下半導體晶圓被黏貼到切割薄膜上。
本發明鑑於所述問題而創立，其目的在於提供可以縮短停機時間並且可以在不引起位置偏移的情況下將切割薄膜黏貼到半導體晶圓上的帶有保護薄膜的切割薄膜。
本申請發明人為了解決所述現有問題而對帶有保護薄膜的切割薄膜進行了研究。結果發現，通過採用下述的構成，可以縮短停機時間並且可以在不引起位置偏移的情況下將切割薄膜黏貼到半導體晶圓上，從而完成了本發明。
即，本發明的帶有保護膜的切割薄膜，通過將切割薄膜與保護薄膜積層而得到，其特徵在於，所述保護薄膜對波長 600nm~700nm的透射率與所述切割薄膜的薄膜檢測用光最先透射的部分中所述帶有保護薄膜的切割薄膜對波長600nm~700nm的透射率之差為20%以上。
根據所述構成，所述保護薄膜對波長600nm~700nm的透射率與所述切割薄膜的薄膜檢測用光最先透射的部分中所述帶有保護薄膜的切割薄膜對波長600nm~700nm的透射率之差為20%以上，因此檢測薄膜檢測用光的感測器，能夠確實地檢測從僅僅保護薄膜的透射率到包括切割薄膜的帶有保護薄膜的切割薄膜的透射率的變化。結果，可以防止未檢測到的切割薄膜被移送而未被使用，可以減少其間的停機時間。另外，可以防止由於檢測延遲而在產生位置偏移的狀態下半導體晶圓被黏貼到切割薄膜上的情況，可以在不引起位置偏移的情況下將切割薄膜黏貼到半導體晶圓上。
所述構成中，優選：所述切割薄膜具有基材和積層在所述基材上的黏著劑層，而且所述基材進行了壓花處理。若所述基材上實施有壓花處理，則可更可確實地使僅僅保護薄膜的透射率與包括切割薄膜的帶有保護薄膜的切割薄膜的透射率之差為20%以上。
所述構成中，優選：所述切割薄膜具有基材和積層在所述基材上的黏著劑層，而且所述基材被著色。若所述基材被著色，則可更確實地使僅僅保護薄膜的透射率與包括切割薄膜的帶有保護薄膜的切割薄膜的透射率之差為20%以上。
所述構成中，優選：所述切割薄膜的薄膜檢測用光最先透射的部分中所述帶有保護薄膜的切割薄膜的透射率為0%~70%。若所述透射率為0%~70%，則易於使所述透射率的差為20%以上。
所述構成中，優選：所述保護薄膜的透射率為75%~100%。若所述透射率為75%~100%，則易於使所述透射率的差為20%以上。
所述構成中，優選：在所述切割薄膜的所述黏著劑層上，積層有晶片接合薄膜。若在切割薄膜的黏著劑層上積層有晶片接合薄膜，則可以省略黏貼晶片接合薄膜的製程，可以提高製造效率。
1‧‧‧基材
2‧‧‧黏著劑層
2a、2b、16、17‧‧‧部分
3‧‧‧晶片接合薄膜
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
6‧‧‧被黏物
7‧‧‧焊線
8‧‧‧密封樹脂
10、20‧‧‧帶有保護薄膜的切割薄膜
11‧‧‧切割薄膜
14‧‧‧保護薄膜
15‧‧‧印刷層
L‧‧‧薄膜檢測用光
T1、T2‧‧‧透射率
圖1(a)是表示本發明的一個實施方式的帶有保護薄膜的切割薄膜的示意剖視圖，圖1(b)為其俯視圖。
圖2是表示圖1(a)和圖1(b)所示的帶有保護薄膜的切割薄膜的一部分的示意剖視圖。
圖3是表示另一實施方式的帶有保護薄膜的切割薄膜的示意剖視圖。
圖4(a)、圖4(b)是用於說明本實施方式的半導體裝置的製造方法的示意剖視圖。
圖5是表示通過圖1(a)、圖1(b)以及圖2所示的帶有保護薄膜的切割薄膜中的接著劑層安裝半導體晶圓的一例的示意剖視圖。
(帶有保護薄膜的切割薄膜)
對於本發明的一個實施方式的帶有保護薄膜的切割薄膜，以下進行說明。圖1(a)是表示本發明的一個實施方式的帶有保護薄膜的切割薄膜的示意剖視圖，圖1(b)為其俯視圖。圖2是表示圖1(a)和圖1(b)所示的帶有保護薄膜的切割薄膜的一部分的示意剖視圖。
如圖1(a)、圖1(b)所示，帶有保護薄膜的切割薄膜10具有在長尺寸的保護薄膜14上積層有俯視為圓形的切割薄膜11的構成。切割薄膜11具有在基材1上積層有黏著劑層2的構成，在黏著劑層2上積層有直徑比切割薄膜11小的晶片接合薄膜3。切割薄膜11是以使黏著劑層2與晶片接合薄膜3對向的方式積層在保護薄膜14上。另外，本發明中，也可以不積層有晶片接合薄膜。
帶有保護薄膜的切割薄膜10，在半導體裝置的製造製程中，沿一定方向(圖1(b)中為左向)繞出，並且在保護薄膜14的寬度方向中央部分16照射薄膜檢測用光L。此時，保護薄膜14對波長600nm~700nm的透射率T1(參考圖1(a))與切割薄膜11的薄膜檢測用光L最先透射的部分17中帶有保護薄膜的切割薄膜 10(本實施方式中，為保護薄膜14與切割薄膜11的積層部分)對波長600nm~700nm的透射率T2(參考圖1(a))之差為20%以上。所述透射率之差優選為20%以上且40%以下，更優選30%以上且40%以下。所述透射率之差為20%以上，因此檢測薄膜檢測用光的感測器可以確實地識別從僅僅保護薄膜14的透射率T1到保護薄膜14與切割薄膜11的積層部分的透射率T2的變化。結果，可以防止不能檢測到的切割薄膜被移送而未被使用的情況，可以減少其間的停機時間。另外，可以在不引起位置偏移的情況下將切割薄膜黏貼到半導體晶圓上。
透射率T1優選為75%~100%，更優選80%~100%，進一步優選85%~100%。若透射率T1為75%~100%，則易於使所述透射率之差為20%以上。
透射率T2優選為0%~70%，更優選0%~65%，進一步優選0%~65%。若透射率T2為0%~70%，則易於使所述透射率之差為20%以上。
所述基材1優選使用具有紫外線透射性的基材，其作為切割薄膜11的強度母體。可以列舉例如：低密度聚乙烯、線性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺酯、聚對苯二甲酸乙二醇酯、聚 萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳族聚醯胺、聚苯硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、含氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素類樹脂、聚矽氧烷樹脂、金屬(箔)、紙等。
另外，作為基材1的材料，可以列舉所述樹脂的交聯體等聚合物。所述塑料薄膜可以不拉伸而使用，也可以根據需要進行單軸或雙軸拉伸處理後使用。利用通過拉伸處理等而賦予了熱收縮性的樹脂片，在切割後使該基材1熱收縮，藉此可以減小黏著劑層2與晶片接合薄膜3的接著面積，從而可以容易地回收半導體晶圓(半導體元件)。
基材1優選被著色。若基材1被著色，則可以更確實地使僅僅保護薄膜14的透射率T1與保護薄膜14與切割薄膜11的積層部分的透射率T2之差為20%以上。在將基材1著色時，可以根據目標光的透射率使用色料(著色劑)。作為這樣的色料，可以適合使用黑系色料、藍系色料、紅系色料等各種深色系色料，特別適合的是黑系色料。作為色料，可以是顏料、染料中的任意一種。色料可以單獨使用或者兩種以上組合使用。另外，作為染料，可以使用酸性染料、反應染料、直接染料、分散染料、陽離子染料等中的任意一種形態的染料。另外，顏料的形態沒有特別限制，可以從公知的顏料中適當選擇使用。
特別是使用染料作為色料時，由於在基材1中染料通過溶解成為均勻地或者大致均勻地分散的狀態，因此可以容易地製 造著色濃度均勻的基材1。
作為黑系色料，沒有特別限制，可以從無機的黑系顏料、黑系染料中適當選擇。另外，作為黑系色料，可以是混合有青色系色料(藍綠系色料)、洋紅色系色料(紫紅系色料)和黃色系色料(黃系色料)的色料混合物。黑系色料可以單獨使用或者兩種以上組合使用。當然，黑系色料可以與黑色以外的顏色的色料組合使用。
具體而言，作為黑系色料，可以列舉例如：碳黑(爐黑、槽製碳黑、乙炔黑、熱裂法碳黑、燈黑等)、石墨、氧化銅、二氧化錳、偶氮類顏料(偶氮次甲基偶氮黑等)、苯胺黑、苝黑、鈦黑、花青黑、活性碳、鐵氧體(非磁性鐵氧體、磁性鐵氧體等)、磁鐵礦、氧化鉻、氧化鐵、二硫化鉬、鉻絡合物、複合氧化物類黑色色素、蒽醌類有機黑色色系等。
本發明中，作為黑系色料，可以使用C.I.溶劑黑3、C.1.溶劑黑7、C.I.溶劑黑22、C.I.溶劑黑27、C.I.溶劑黑29、C.I.溶劑黑34、C.I.溶劑黑43、C.I.溶劑黑70、C.I.直接黑17、C.I.直接黑19、C.I.直接黑22、C.I.直接黑32、C.I.直接黑38、C.I.直接黑51、C.I.直接黑71、C.I.酸性黑1、C.I.酸性黑2、C.I.酸性黑24、C.I.酸性黑26、C.I.酸性黑31、C.I.酸性黑48、C.I.酸性黑52、C.I.酸性黑107、C.I.酸性黑109、C.I.酸性黑110、C.I.酸性黑119、C.I.酸性黑154、C.I.分散黑1、C.I.分散黑3、C.I.分散黑10、C.I.分散黑24等黑系染料；C.I.顏料黑1、C.I.顏料黑7等黑系顏料等。
作為這樣的黑系色料，例如，市售有商品名“Oil Black BY”、商品名“Oil Black BS”、商品名“Oil Black HBB”、商品名“Oil Black 803”、商品名“Oil Black 860”、商品名“Oil Black 5970”、商品名“Oil Black 5906”、商品名“Oil Black 5905”(orientchemical工業股份有限公司製造)等。
作為黑系色料以外的色料，可以列舉例如：青系色料、洋紅系色料、黃系色料等。作為青系色料，可以列舉例如：C.I.溶劑藍25、C.I.溶劑藍36、C.I.溶劑藍60、C.I.溶劑藍70、C.I.溶劑藍93、C.I.溶劑藍95；C.I.酸性藍6、C.I.酸性藍45等青系染料；C.I.顏料藍1、C.I.顏料藍2、C.I.顏料藍3、C.I.顏料藍15、C.I.顏料藍15：1、C.I.顏料藍15：2、C.I.顏料藍15：3、C.I.顏料藍15：4、C.I.顏料藍15：5、C.I.顏料藍15：6、C.I.顏料藍16、C.I.顏料藍17、C.I.顏料藍17：1、C.I.顏料藍18、C.I.顏料藍22、C.I.顏料藍25、C.I.顏料藍56、C.I.顏料藍60、C.I.顏料藍63、C.I.顏料藍65、C.I.顏料藍66；C.I.還原藍4、C.I.還原藍60；C.I.顏料綠7等青系顏料等。
另外，在洋紅系色料中，作為洋紅系染料，可以列舉例如：C.I.溶劑紅1、C.I.溶劑紅3、C.I.溶劑紅8、C.I.溶劑紅23、C.I.溶劑紅24、C.I.溶劑紅25、C.I.溶劑紅27、C.I.溶劑紅30、C.I.溶劑紅49、C.I.溶劑紅52、C.I.溶劑紅58、C.I.溶劑紅63、C.I.溶劑紅81、C.I.溶劑紅82、C.I.溶劑紅83、C.I.溶劑紅84、C.I.溶劑紅100、C.I.溶劑紅109、C.I.溶劑紅111、C.I.溶劑紅121、C.I.溶劑紅122；C.I.分散紅9；C.I.溶劑紫8、C.I.溶劑紫13、C.I.溶劑紫 14、C.I.溶劑紫21、C.I.溶劑紫27；C.I.分散紫1；C.I.鹼性紅1、C.I.鹼性紅2、C.I.鹼性紅9、C.I.鹼性紅12、C.I.鹼性紅13、C.I.鹼性紅14、C.I.鹼性紅15、C.I.鹼性紅17、C.I.鹼性紅18、C.I.鹼性紅22、C.I.鹼性紅23、C.I.鹼性紅24、C.I.鹼性紅27、C.I.鹼性紅29、C.I.鹼性紅32、C.I.鹼性紅34、C.I.鹼性紅35、C.I.鹼性紅36、C.I.鹼性紅37、C.I.鹼性紅38、C.I.鹼性紅39、C.I.鹼性紅40；C.I.鹼性紫1、C.I.鹼性紫3、C.I.鹼性紫7、C.I.鹼性紫10、C.I.鹼性紫14、C.I.鹼性紫15、C.I.鹼性紫21、C.I.鹼性紫25、C.I.鹼性紫26、C.I.鹼性紫27、C.I.鹼性紫28等。
在洋紅系色料中，作為洋紅系顏料，可以列舉例如：C.I.顏料紅1、C.I.顏料紅2、C.I.顏料紅3、C.I.顏料紅4、C.I.顏料紅5、C.I.顏料紅6、C.I.顏料紅7、C.I.顏料紅8、C.I.顏料紅9、C.I.顏料紅10、C.I.顏料紅11、C.I.顏料紅12、C.I.顏料紅13、C.I.顏料紅14、C.I.顏料紅15、C.I.顏料紅16、C.I.顏料紅17、C.I.顏料紅18、C.I.顏料紅19、C.I.顏料紅21、C.I.顏料紅22、C.I.顏料紅23、C.I.顏料紅30、C.I.顏料紅31、C.I.顏料紅32、C.I.顏料紅37、C.I.顏料紅38、C.I.顏料紅39、C.I.顏料紅40、C.I.顏料紅41、C.I.顏料紅42、C.I.顏料紅48：1、C.I.顏料紅48：2、C.I.顏料紅48：3、C.I.顏料紅48：4、C.I.顏料紅49、C.I.顏料紅49：1、C.I.顏料紅50、C.I.顏料紅51、C.I.顏料紅52、C.I.顏料紅52：2、C.I.顏料紅53：1、C.I.顏料紅54、C.I.顏料紅55、C.I.顏料紅56、C.I.顏料紅57：1、C.I.顏料紅58、C.I.顏料紅60、C.I.顏料紅60：1、C.I.顏料紅63、 C.I.顏料紅63：1、C.I.顏料紅63：2、C.I.顏料紅64、C.I.顏料紅64：1、C.I.顏料紅67、C.I.顏料紅68、C.I.顏料紅81、C.I.顏料紅83、C.I.顏料紅87、C.I.顏料紅88、C.I.顏料紅89、C.I.顏料紅90、C.I.顏料紅92、C.I.顏料紅101、C.I.顏料紅104、C.I.顏料紅105、C.I.顏料紅106、C.I.顏料紅108、C.I.顏料紅112、C.I.顏料紅114、C.I.顏料紅122、C.I.顏料紅123、C.I.顏料紅139、C.I.顏料紅144、C.I.顏料紅146、C.I.顏料紅147、C.I.顏料紅149、C.I.顏料紅150、C.I.顏料紅151、C.I.顏料紅163、C.I.顏料紅166、C.I.顏料紅168、C.I.顏料紅170、C.I.顏料紅171、C.I.顏料紅172、C.I.顏料紅175、C.I.顏料紅176、C.I.顏料紅177、C.I.顏料紅178、C.I.顏料紅179、C.I.顏料紅184、C.I.顏料紅185、C.I.顏料紅187、C.I.顏料紅190、C.I.顏料紅193、C.I.顏料紅202、C.I.顏料紅206、C.I.顏料紅207、C.I.顏料紅209、C.I.顏料紅219、C.I.顏料紅222、C.I.顏料紅224、C.I.顏料紅238、C.I.顏料紅245；C.I.顏料紫3、C.I.顏料紫9、C.I.顏料紫19、C.I.顏料紫23、C.I.顏料紫31、C.I.顏料紫32、C.I.顏料紫33、C.I.顏料紫36、C.I.顏料紫38、C.I.顏料紫43、C.I.顏料紫50；C.I.還原紅1、C.I.還原紅2、C.I.還原紅10、C.I.還原紅13、C.I.還原紅15、C.I.還原紅23、C.I.還原紅29、C.I.還原紅35等。
另外，作為黃系色料，可以列舉例如：C.I.溶劑黃19、C.I.溶劑黃44、C.I.溶劑黃77、C.I.溶劑黃79、C.I.溶劑黃81、C.I.溶劑黃82、C.I.溶劑黃93、C.I.溶劑黃98、C.I.溶劑黃103、C.I.溶劑黃104、C.I.溶劑黃112、C.I.溶劑黃162等黃系染料；C.I.顏 料橙31、C.I.顏料橙43；C.I.顏料黃1、C.I.顏料黃2、C.I.顏料黃3、C.I.顏料黃4、C.I.顏料黃5、C.I.顏料黃6、C.I.顏料黃7、C.I.顏料黃10、C.I.顏料黃11、C.I.顏料黃12、C.I.顏料黃13、C.I.顏料黃14、C.I.顏料黃15、C.I.顏料黃16、C.I.顏料黃17、C.I.顏料黃23、C.I.顏料黃24、C.I.顏料黃34、C.I.顏料黃35、C.I.顏料黃37、C.I.顏料黃42、C.I.顏料黃53、C.I.顏料黃55、C.I.顏料黃65、C.I.顏料黃73、C.I.顏料黃74、C.I.顏料黃75、C.I.顏料黃81、C.I.顏料黃83、C.I.顏料黃93、C.I.顏料黃94、C.I.顏料黃95、C.I.顏料黃97、C.I.顏料黃98、C.I.顏料黃100、C.I.顏料黃101、C.I.顏料黃104、C.I.顏料黃108、C.I.顏料黃109、C.I.顏料黃110、C.I.顏料黃113、C.I.顏料黃114、C.I.顏料黃116、C.I.顏料黃117、C.I.顏料黃120、C.I.顏料黃128、C.I.顏料黃129、C.I.顏料黃133、C.I.顏料黃138、C.I.顏料黃139、C.I.顏料黃147、C.I.顏料黃150、C.I.顏料黃151、C.I.顏料黃153、C.I.顏料黃154、C.I.顏料黃155、C.I.顏料黃156、C.I.顏料黃167、C.I.顏料黃172、C.I.顏料黃173、C.I.顏料黃180、C.I.顏料黃185、C.I.顏料黃195；C.I.還原黃1、C.I.還原黃3、C.I.還原黃20等黃系顏料等。
青系色料、洋紅系色料、黃系色料等各種色料，各種可以單獨使用或者兩種以上組合使用。另外，使用青系色料、洋紅系色料、黃系色料等各種色料的兩種以上的情況下，這些色料的混合比例(或者調配比例)沒有特別限制，可以根據各色料的種類或目標光透射率等適當選擇。
基材1的表面優選進行壓花處理。若對基材1進行壓花處理，則可以更確實地使僅僅保護薄膜14的透射率T1與保護薄膜14和切割薄膜11的積層部分的透射率T2之差為20%以上。作為壓花處理的方法，可以列舉例如：使薄膜與壓花輥貼合的方法、砂層處理方法、蝕刻等化學處理方法等。作為壓花處理的標準，可以列舉例如霧度值。基材1的表面的霧度值優選為10%~100%，更優選20%~100%，進一步優選30%~100%。通過將基材1的表面的霧度值調節為10%~100%，可以確實地使透射率T1與透射率T2之差為20%以上。
另外，為了提高與鄰接層的密著性、保持性等，基材1的表面可以實施慣用的表面處理，例如，化學或物理處理如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、電離放射線處理等，利用底塗劑(例如後述的黏著物質)的塗布處理。所述基材1可以適當地選擇使用同種或不同種類的材料，根據需要也可以使用將數種材料共混後的材料。
基材1的厚度沒有特別限制，可以適當確定，一般為約5μm~約200μm。
作為黏著劑層2的形成中使用的黏著劑，沒有特別限制，例如，可以使用丙烯酸類黏著劑、橡膠類黏著劑等一般的壓敏黏著劑。作為所述壓敏黏著劑，從半導體晶圓或玻璃等避忌污染的電子部件的超純水或醇等有機溶劑的清潔洗滌性等的觀點考慮，優選以丙烯酸類聚合物為基礎聚合物的丙烯酸類黏著劑。
作為所述丙烯酸類聚合物，可以列舉例如：使用(甲基)丙烯酸烷基酯(例如，甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、第二丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子數1~30、特別是碳原子數4~18的直鏈或支鏈烷基酯等)和(甲基)丙烯酸環烷酯(例如，環戊酯、環己酯等)中的一種或兩種以上作為單體成分的丙烯酸類聚合物等。另外，(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙烯酸酯，本發明的(甲基)全部表示相同的含義。
為了改善凝聚力、耐熱性等，所述丙烯酸類聚合物根據需要可以含有與能夠同所述(甲基)丙烯酸烷基酯或環烷酯共聚的其它單體成分對應的單元。作為這樣的單體成分，可以列舉例如：含羧基單體如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等；酸酐單體如馬來酸酐、衣康酸酐等；含羥基單體如(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等；含磺酸基單體如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧萘磺酸等；含磷酸基單體如丙烯醯磷酸-2- 羥基乙酯等；丙烯醯胺、丙烯腈等。這些可共聚單體成分可以使用一種或兩種以上。這些可共聚單體的使用量優選為全部單體成分的40重量%以下。
另外，為了進行交聯，所述丙烯酸類聚合物根據需要也可以含有多官能單體等作為共聚用單體成分。作為這樣的多官能單體，可以列舉例如：己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯等。這些多官能單體可以使用一種或兩種以上。多官能單體的使用量從黏著特性等觀點考慮優選為全部單體成分的30重量%以下。
所述丙烯酸類聚合物可以通過將單一單體或兩種以上單體的混合物聚合來得到。聚合可以通過溶液聚合、乳液聚合、塊狀聚合、懸浮聚合等任意方式進行。從防止對潔淨被黏物的污染等觀點考慮，優選低分子量物質的含量少。從該點考慮，丙烯酸類聚合物的數量平均分子量優選為約30萬以上，更優選約40萬~約300萬。
另外，為了提高作為基礎聚合物的丙烯酸類聚合物等的數量平均分子量，所述黏著劑中也可以適當採用外部交聯劑。外部交聯方法的具體手段可以列舉：添加聚異氰酸酯化合物、環氧 化合物、氮丙啶化合物、三聚氰胺類交聯劑等所謂的交聯劑使其反應的方法。使用外部交聯劑時，其使用量根據與需要交聯的基礎聚合物的平衡以及作為黏著劑的使用用途而適當決定。一般而言，相對於所述基礎聚合物100重量份，優選調配約5重量份以下，更優選調配約0.1~約5重量份。另外，根據需要，在黏著劑中除所述成分以外也可以使用各種增黏劑、抗老化劑等添加劑。
黏著劑層2可以由輻射線固化型黏著劑形成。輻射線固化型黏著劑通過紫外線等輻射線的照射使交聯度增大，從而可以容易地降低其黏著力。例如，藉由僅對圖2所示的黏著劑層2的與工件黏貼部分對應的部分2a照射輻射線，可以設置與部分2b的黏著力的差異。
另外，按照圖2所示的晶片接合薄膜3使輻射線固化型黏著劑層2固化，藉此可以容易地形成黏著力顯著下降的所述部分2a。由於在固化且黏著力下降的所述部分2a上黏貼有晶片接合薄膜3，因此黏著劑層2的所述部分2a與晶片接合薄膜3的界面具有在拾取時容易剝離的性質。另一方面，未照射輻射線的部分具有充分的黏著力，形成所述部分2b。所述部分2b可以將晶圓環(wafer ring)固定。
輻射線固化型黏著劑可以沒有特別限制地使用具有碳碳雙鍵等輻射線固化性官能基、並且顯示黏著性的輻射線固化型黏著劑。作為輻射線固化型黏著劑，可以例示例如：在所述丙烯酸類黏著劑、橡膠類黏著劑等一般的壓敏黏著劑中調配有輻射線固 化性的單體成分或低聚物成分的添加型輻射線固化型黏著劑。
作為用於調配的輻射線固化性單體成分，可以列舉例如：胺基甲酸酯低聚物、胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外，輻射線固化性低聚物成分可以列舉聚胺酯類、聚醚類、聚酯類、聚碳酸酯類、聚丁二烯類等各種低聚物，其分子量在約100~約30000的範圍內是適當的。輻射線固化性單體成分或低聚物成分的調配量可以根據所述黏著劑層的種類適當地確定能夠降低黏著劑層的黏著力的量。一般而言，相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份，例如為約5重量份~約500重量份，優選約40重量份~約150重量份。
另外，作為輻射線固化型黏著劑，除了前面說明的添加型輻射線固化型黏著劑以外，還可以列舉使用在聚合物側鏈或主鏈中或者主鏈末端具有碳碳雙鍵的聚合物作為基礎聚合物的內在型輻射線固化型黏著劑。內在型輻射線固化型黏著劑無需含有或者多數不含有作為低分子量成分的低聚物成分等，因此低聚物成分等不會隨時間推移在黏著劑中遷移，從而可以形成穩定的層結構的黏著劑層，因此優選。
所述具有碳碳雙鍵的基礎聚合物，可以沒有特別限制地使用具有碳碳雙鍵並且具有黏著性的聚合物。作為這樣的基礎聚 合物，優選以丙烯酸類聚合物作為基本骨架的聚合物。作為丙烯酸類聚合物的基本骨架，可以列舉前面例示過的丙烯酸類聚合物。
在所述丙烯酸類聚合物中引入碳碳雙鍵的方法沒有特別限制，可以採用各種方法，但是，將碳碳雙鍵引入聚合物側鏈的方法在分子設計上比較容易。可以列舉例如：預先將具有官能基的單體與丙烯酸類聚合物共聚後，使具有能夠與該官能基反應的官能基和碳碳雙鍵的化合物在保持碳碳雙鍵的輻射線固化性的情況下進行縮合或加成反應的方法。
作為這些官能基的組合例，可以列舉例如：羧基與環氧基、羧基與氮丙啶基、羥基與異氰酸酯基等。這些官能基的組合中考慮反應跟蹤的容易性，優選羥基與異氰酸酯基的組合。另外，如果是通過這些官能基的組合而生成所述具有碳碳雙鍵的丙烯酸類聚合物的組合，則官能基可以在丙烯酸類聚合物與所述化合物中的任意一方上，在所述的優選組合中，優選丙烯酸類聚合物具有羥基、所述化合物具有異氰酸酯基的情況。此時，作為具有碳碳雙鍵的異氰酸酯化合物，可以列舉例如：甲基丙烯醯異氰酸酯、2-甲基丙烯醯氧乙基異氰酸酯、間異丙烯基-α,α-二甲基聯苯醯異氰酸酯等。另外，作為丙烯酸類聚合物，可以使用將前面例示的含羥基單體或2-羥基乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二醇單乙烯基醚的醚類化合物等共聚而得到的聚合物。
所述內在型輻射線固化型黏著劑可以單獨使用所述具有碳碳雙鍵的基礎聚合物(特別是丙烯酸類聚合物)，也可以在不損害 特性的範圍內調配所述輻射線固化性單體成分或低聚物成分。輻射線固化性低聚物成分等相對於基礎聚合物100重量份通常在30重量份的範圍內，優選0重量份~10重量份的範圍。
所述輻射線固化型黏著劑在通過紫外線等固化時可以含有光聚合起始劑。作為光聚合起始劑，可以列舉例如：α-酮醇類化合物如4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、1-羥基環己基苯基酮等；苯乙酮類化合物如甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-嗎啉基)丙烷-1-酮等；苯偶姻醚類化合物如苯偶姻乙醚、苯偶姻異丙醚、茴香偶姻甲基醚等；縮酮類化合物如聯苯醯二甲基縮酮等；芳香族磺醯氯類化合物如2-萘磺醯氯等；光活性肟類化合物如1-苯基-1,2-丙烷二酮-2-(0-乙氧基羰基)肟等；二苯甲酮類化合物如二苯甲酮、苯甲醯苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等；噻噸酮類化合物如噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等；樟腦醌；鹵代酮；醯基膦氧化物；醯基膦酸酯等。光聚合起始劑的調配量相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份，例如為約0.05重量份~約20重量份。
另外，作為輻射線固化型黏著劑，可以列舉例如：日本特開昭60-196956號公報中所公開的、含有具有2個以上不飽和鍵的加成聚合性化合物、具有環氧基的烷氧基矽烷等光聚合性化 合物、和羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽類化合物等光聚合起始劑的橡膠類黏著劑或丙烯酸類黏著劑等。
可以在黏著劑層2中添加色料代替在基材1中添加色料，或者可以除了在基材1中添加色料以外還在黏著劑層2中添加色料。作在黏著劑層2中添加的色料，可以使用與上述在基材1中添加的色料同樣的色料。作為色料的添加方法，可以列舉例如：在黏著劑組合物溶液中溶解或分散色料的方法。
藉由輻射線固化型黏著劑形成黏著劑層2的情況下，可以對黏著劑層2的一部分進行輻射線照射使得黏著劑層2中所述部分2a的黏著力<其它部分2b的黏著力。
作為在所述黏著劑層2中形成所述部分2a的方法，可以列舉：在支撐基材1上形成輻射線固化型黏著劑層2後，對所述部分2a局部地照射輻射線使其固化的方法。局部的輻射線照射可以通過形成有與所述部分2a以外的部分對應的圖案的光掩模來進行。另外，可以列舉點狀照射紫外線進行固化的方法等。輻射線固化型黏著劑層2的形成可以通過將設置在隔片上的輻射線固化型黏著劑層轉印到支撐基材1上來進行。局部的輻射線照射也可以對設置在隔片上的輻射線固化型黏著劑層2進行。
另外，通過輻射線固化型黏著劑形成黏著劑層2的情況下，可以使用對支撐基材1的至少單面的、與所述部分2a對應的部分以外的部分的全部或局部進行遮光的基材，在該基材上形成輻射線固化型黏著劑層2後進行輻射線照射，使所述部分2a固 化，從而形成黏著力下降的所述部分2a。作為遮光材料，可以通過印刷或蒸鍍等在支撐薄膜上製作能夠成為光掩模的材料。通過所述製造方法，可以有效地製造帶有保護薄膜的切割薄膜10。
另外，照射輻射線時因氧產生固化障礙的情況下，期望利用任意方法從輻射線固化型黏著劑層2的表面隔絕氧(空氣)。可以列舉例如：用隔片將所述黏著劑層2的表面覆蓋的方法或者在氮氣氛圍中進行紫外線等輻射線的照射的方法等。
黏著劑層2的厚度沒有特別限制，從兼顧防止晶片切割面的缺口和接著層的固定保持等觀點考慮，優選為約1μm至約50μm。優選2μm~30μm、更優選5μm~25μm。
晶片接合薄膜3的積層結構，如本實施方式所示，可以列舉僅由接著劑層的單層構成的結構或者在芯材的單面或兩面形成有接著劑層的多層結構。作為所述芯材，可以列舉例如：薄膜(例如，聚醯亞胺薄膜、聚酯薄膜、聚對苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纖維或塑料製無紡纖維強化的樹脂基板、矽基板或玻璃基板等。
作為構成晶片接合薄膜3的接著劑組合物，可以列舉將熱塑性樹脂和熱固性樹脂組合使用而得到的組合物。
作為所述熱固性樹脂，可以列舉：酚醛樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺酯樹脂、矽酮樹脂或熱固性聚醯亞胺樹脂等。這些樹脂可以單獨使用或者兩種以上組合使用。特別優選腐蝕半導體元件的離子性雜質等的含量少的環氧樹脂。 另外，作為環氧樹脂的固化劑，優選酚醛樹脂。
所述環氧樹脂，只要是通常作為接著劑組合物使用的環氧樹脂則沒有特別限制，可以使用例如：雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三(羥苯基)甲烷型、四(羥苯基)乙烷型等雙官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、異氰脲酸三縮水甘油酯型或縮水甘油胺型等環氧樹脂。這些環氧樹脂可以單獨使用或者兩種以上組合使用。這些環氧樹脂中，特別優選酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三(羥苯基)甲烷型環氧樹脂或四(羥苯基)乙烷型環氧樹脂。這是因為：這些環氧樹脂與作為固化劑的酚醛樹脂的反應性好，並且耐熱性等優良。
所述酚醛樹脂作為所述環氧樹脂的固化劑起作用，可以列舉例如：苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、苯酚聯苯樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂、甲階酚醛樹脂(resol)型酚醛樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。這些酚醛樹脂可以單獨使用或者兩種以上組合使用。這些酚醛樹脂中特別優選苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。這是因為可以提高半導體裝置的連接可靠性。
所述環氧樹脂與酚醛樹脂的調配比例，例如，以相對於所述環氧樹脂成分中的環氧基1當量，酚醛樹脂中的羥基為0.5 當量~2.0當量的方式進行調配是適當的。另外，更合適的是0.8當量~1.2當量。即，這是因為：若兩者的調配比例在所述範圍以外，則不能進行充分的固化反應，從而環氧樹脂固化物的特性容易劣化。
作為所述熱塑性樹脂，可以列舉：天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、尼龍6或尼龍66等聚醯胺樹脂、苯氧基樹脂、丙烯酸類樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或者含氟樹脂等。這些熱塑性樹脂可以單獨使用或者兩種以上組合使用。這些熱塑性樹脂中，特別優選離子性雜質少、耐熱性高、能夠確保半導體元件的可靠性的丙烯酸類樹脂。
作為所述丙烯酸類樹脂，沒有特別限制，可以列舉：以一種或兩種以上具有碳原子數30以下、特別是碳原子數4~18的直鏈或支鏈烷基的丙烯酸酯或甲基丙烯酸酯作為成分的聚合物(丙烯酸類聚合物)等。作為所述烷基，可以列舉例如：甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者二十烷基等。
另外，作為用於形成所述聚合物的其它單體，沒有特別限制，可以列舉例如：含縮水甘油基單體如丙烯酸縮水甘油酯、 甲基丙烯酸縮水甘油酯等；含羧基單體如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等；酸酐單體如馬來酸酐或衣康酸酐等；含羥基單體如(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯或丙烯酸(4-羥甲基環己基)甲酯等；含磺酸基單體如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等；含磷酸基單體如丙烯醯磷酸-2-羥基乙酯；苯乙烯單體；或者丙烯腈。
另外，晶片接合薄膜3中，根據其用途可以適當調配填料。填料的調配可以賦予導電性或提高導熱性、調節彈性模數等。作為所述填料，可以列舉無機填料和有機填料，從提高操作性、提高熱電導性、調節熔融黏度、賦予觸變性等特性的觀點考慮，優選無機填料。作為所述無機填料，沒有特別限制，可以列舉例如：氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁鬚晶、氮化硼、結晶二氧化矽、非晶二氧化矽等。這些填料可以單獨使用或者兩種以上組合使用。從提高熱電導性的觀點考慮，優選氧化鋁、氮化鋁、氮化硼、結晶二氧化矽、非晶二氧化矽。另外，從上述各特性平衡良好的觀點考慮，優選結晶二氧化矽或非晶二氧化矽。另外，為了賦予導電性、提高熱電導性等，也可以使用導電性物質(導電 填料)作為無機填料。作為導電填料，可以列舉將銀、鋁、金、銅、鎳、導電性合金等形成為球形、針狀、薄片狀而得到的金屬粉、氧化鋁等金屬氧化物、非晶質碳黑、石墨等。所述填料的平均粒徑可以為0.1μm~80μm。另外，所述填料的平均粒徑例如為利用光度式粒度分佈計(HORIBA製造，裝置名：LA-910)求出的值。
所述填料的調配量，相對於熱固性樹脂成分、熱塑性樹脂成分和填料的合計100重量份優選為5重量份以上，更優選100重量份以上且500重量份以下，進一步優選200重量份以上且400重量份以下。
另外，晶片接合薄膜3中，除了所述填料以外，根據需要還可以適當調配其它添加劑。作為其它添加劑，可以列舉例如：阻燃劑、矽烷偶合劑或離子捕獲劑等。作為所述阻燃劑，可以列舉例如：三氧化二銻、五氧化二銻、溴化環氧樹脂等。這些阻燃劑可以單獨使用或者兩種以上組合使用。作為所述矽烷偶合劑，可以列舉例如：β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷等。這些化合物可以單獨使用或者兩種以上組合使用。作為所述離子捕獲劑，可以列舉例如：水滑石類、氫氧化鉍等。這些離子捕獲劑可以單獨使用或者兩種以上組合使用。
晶片接合薄膜3的厚度(積層體的情況下為總厚度)沒有特別限制，例如，可以從1μm~200μm的範圍內選擇，優選5μm~100μm，更優選10μm~80μm。
保護薄膜14具有在供給實際應用之前作為保護晶片接合薄膜3的保護材料的功能等。另外，保護薄膜14也可以作為將晶片接合薄膜3向黏著劑層2轉印時的支撐基材使用。保護薄膜14在向晶片接合薄膜3上黏貼工件時剝離。作為保護薄膜14的材質，可以列舉聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用含氟型剝離劑、長鏈烷基丙烯酸酯型剝離劑等剝離劑進行表面塗布後的塑料薄膜或紙等。
本實施方式的帶有保護薄膜的切割薄膜10，例如可以如下製作。
首先，基材1可以藉由現有公知的製膜方法製膜。作為該製膜方法，可以例示例如：壓延製膜法、有機溶劑中的流延法、密閉體系中的吹塑擠出法、T形模頭擠出法、共擠出法、乾式層壓法等。在對基材1進行著色的情況下，添加上述的色料。
然後，在基材1上塗布黏著劑組合物溶液形成塗膜，然後在規定條件下將該塗膜乾燥(根據需要進行加熱交聯)而形成黏著劑層2。作為塗布方法，沒有特別限制可以列舉例如：輥塗、網版塗布、凹版塗布等。另外，作為乾燥條件，可以在例如：在乾燥溫度80℃~150℃、乾燥時間0.5分鍾~5分鍾的範圍內進行。另外，也可以在隔片上塗布黏著劑組合物形成塗膜後在所述乾燥條件下將塗膜乾燥來形成黏著劑層2。在對黏著劑層2進行著色的情況下，在上所述黏著劑組合物溶液中添加上述色料。然後，將黏著劑層2與隔片一起黏貼到基材1上。由此，製作切割薄膜11。
晶片接合薄膜3例如如下製作。
首先，製作作為晶片接合薄膜3的形成材料的接著劑組合物溶液。在該接著劑組合物溶液中，如前所述，調配有所述接著劑組合物、填料、其它各種添加劑等。
然後，在基材隔片上以達到規定厚度的方式塗布接著劑組合物溶液形成塗膜。在規定條件下將塗膜乾燥，形成接著劑層。作為塗布方法沒有特別限制，可以列舉例如：輥塗、網版塗布、凹版塗布等。另外，作為乾燥條件，例如在乾燥溫度70℃~160℃、乾燥時間1分鐘~5分鐘的範圍內進行。另外，可以在隔片上塗布黏著劑組合物溶液形成塗膜後，在所述乾燥條件下乾燥塗膜而形成接著劑層。然後，將接著劑層與隔片一起黏貼到基材隔片上。
接著，從切割薄膜11和晶片接合薄膜3上各自將隔片剝離，並以晶片接合薄膜3和黏著劑層2為黏貼面的方式將兩者黏貼。黏貼例如通過壓接進行。此時，層壓溫度沒有特別限制，通常優選30℃~50℃，更優選35℃~45℃。另外，線壓也沒有特別限制，例如優選0.1kgf/cm~20kgf/cm，更優選1kgf/cm~10kgf/cm。然後，將晶片接合薄膜3上的基材隔片剝離，與保護薄膜14黏貼，由此可以得到本實施方式的帶有保護薄膜的切割薄膜10。本實施方式中，使用長尺寸的保護薄膜14，並在保護薄膜14上以規定的間隔黏貼多個切割薄膜(黏貼有晶片接合薄膜3的切割薄膜11)。
圖3是表示另一實施方式的帶有保護薄膜的切割薄膜的示意剖視圖。
對於基材1而言，如圖3所示的帶有保護薄膜的切割薄膜20所示，在基材1與黏著劑層2之間可以設置印刷層15。若設置印刷層15，則可以更確實地使僅僅保護薄膜14的透射率與包含切割薄膜11的帶有保護薄膜的切割薄膜20的透射率之差為20%以上。
印刷層15例如可以通過凸版印刷法、平版印刷法、凹版印刷法、孔版印刷法等印刷法形成。此時，作為印刷層15中使用的色料(著色劑)，可以使用與上述同樣的色料。
(半導體裝置的製造方法)
以下，參考圖4(a)、圖4(b)和圖5以使用帶有保護薄膜的切割薄膜10的情況為例進行說明。圖4(a)、圖4(b)是用於說明本實施方式的半導體裝置的製造方法的示意剖視圖。圖5是表示通過圖1(a)、圖1(b)以及圖2所示的帶有保護薄膜的切割薄膜中的接著劑層安裝半導體晶圓的例子的示意剖視圖。
如圖4(a)所示，帶有保護薄膜的切割薄膜10沿一定方向(圖4(a)中為左向)繞出，並將薄膜檢測用光L照射到保護薄膜14的寬度方向中央部分。圖4(a)中，光L僅透過保護薄膜14，透射的光L通過未圖示的感測器檢測，計算透射率。此時的透射率為透射率T1。
然後，將帶有保護薄膜的切割薄膜10進一步繞出時，如圖4(b)所示，光L透過保護薄膜14與切割薄膜11的積層部分。透射的光通過未圖示的感測器檢測，計算透射率。此時的透射率 為透射率T2。
薄膜檢測用光優選波長600nm~700nm，更優選波長620nm~680nm，進一步優選波長640nm~660nm。
對於感測器而言，在透射率變化20%以上時，即透射率從透射率T1變化到透射率T2時，判斷為檢測到保護薄膜14上的切割薄膜11。而且，晶圓安裝裝置基於該檢測結果識別切割薄膜11的位置，從保護薄膜14上將切割薄膜11剝離並壓接半導體晶圓4(黏貼製程)。本製程利用壓接輥等擠壓手段擠壓來進行。安裝時的黏貼溫度沒有特別限制，優選例如在20℃~80℃的範圍內。本實施方式中，透射率T1與透射率T2之差為20%以上，因此感測器可以確實地識別僅僅保護薄膜14的透射率T1到保護薄膜14與切割薄膜11的積層部分的透射率T2的變化。結果，可以防止未檢測到的切割薄膜被移送而未被使用，可以減少其間的停機時間。另外，可以在不引起位置偏移的情況下將切割薄膜黏貼到半導體晶圓上。
然後，進行半導體晶圓4的切割。由此，將半導體晶圓4切割為規定尺寸而小片化，製作半導體晶片5(參考圖5)。切割例如按照常規方法從半導體晶圓4的電路面一側進行。另外，本製程中，例如，可以採用切入到晶片接合薄膜3的、稱為全切割的切割方式等。本製程中使用的切割裝置沒有特別限制，可以採用現有公知的切割裝置。另外，半導體晶圓4由帶有晶片接合薄膜3的切割薄膜11膠黏固定，因此可以抑制晶片缺損或晶片飛散，並 且可以抑制半導體晶圓4的破損。
為了剝離由帶有晶片接合薄膜3的切割薄膜11膠黏固定的半導體晶片5，進行半導體晶片5的拾取。拾取方法沒有特別限制，可以採用現有公知的各種方法。可以列舉例如：用針將各個半導體晶片5從切割薄膜11一側上推，並利用拾取裝置拾取經上推的半導體晶片5的方法等。
在此，黏著劑層2為紫外線固化型的情況下，在對該黏著劑層2照射紫外線後進行拾取。由此，黏著劑層2對晶片接合薄膜3的黏著力下降，使半導體晶片5容易剝離。結果，可以在不損傷半導體晶片5的情況下進行拾取。紫外線照射時的照射強度、照射時間等條件沒有特別限制，可以根據需要適當設定。另外，作為紫外線照射時使用的光源，可以使用所述的光源。
經拾取的半導體晶片5介隔晶片接合薄膜3而接著固定到被黏物6上(晶片接合)。作為被黏物6，可以列舉引線框、TAB薄膜、基板或者另外製作而成的半導體晶圓等。被黏物6例如可以是容易變形的變形型被黏物，也可以是難以變形的非變形型被黏物(半導體晶圓等)。
作為所述基板，可以使用現有公知的基板。另外，所述引線框可以使用Cu引線框、42合金引線框等金屬引線框或包含玻璃環氧、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等的有機基板。但是，本發明不限於此，也包含安裝半導體元件並與半導體元件電連接後可以使用的電路基板。
晶片接合薄膜3為熱固化型時，通過加熱固化，將半導體晶片5接著固定在被黏物6上，使耐熱強度提高。可以在加熱溫度為80℃~200℃、優選100℃~175℃、更優選100℃~140℃下進行。另外，可以在加熱時間為0.1小時~24小時、優選0.1小時~3小時、更優選0.2小時~1小時下進行。另外，介隔晶片接合薄膜3將半導體晶片5接著固定到基板等上而得到的材料可以供給回流焊接製程。
熱固化後的晶片接合薄膜3對被黏物6的剪切接著力優選為0.2MPa以上，更優選0.2MPa~10MPa。晶片接合薄膜3的剪切接著力為至少0.2MPa以上時，在絲焊製程時，不會因該製程中的超聲波振動或加熱而在晶片接合薄膜3與半導體晶片5或被黏物6的接著面上產生剪切變形。即，半導體元件不會因絲焊時的超聲波振動而移動，由此，可以防止絲焊的成功率下降。
另外，本實施方式的半導體裝置的製造方法，可以在不經過晶片接合薄膜3的利用加熱處理進行的熱固化製程的情況下進行絲焊，再用密封樹脂將半導體晶片5密封，並將該密封樹脂後固化。此時，晶片接合薄膜3暫時固著時對被黏物6的剪切接著力優選為0.2MPa以上，更優選0.2MPa~10MPa。若晶片接合薄膜3暫時固著時的剪切膠黏力為至少0.2MPa以上，則即使在不經過加熱製程的情況下進行絲焊製程，也不會因該製程中的超聲波振動或加熱而在晶片接合薄膜3與半導體晶片5或被黏物6的接著面上產生剪切變形。即，半導體元件不會因絲焊時的超聲波振 動而移動，由此，可以防止絲焊的成功率下降。
所述絲焊是利用焊線7將被黏物6的端子部(內部引線)的末端與半導體晶片5上的電極焊盤(未圖示)電性連接的製程。作為所述焊線7，可以使用例如：金線、鋁線或銅線等。進行絲焊時的溫度在80℃~250℃、優選80℃~220℃的範圍內進行。另外，其加熱時間進行幾秒~幾分鐘。線路連接是在所述溫度範圍內加熱的狀態下，通過組合使用超聲波振動能和施加的壓力而產生的壓接能來進行。本製程可以在不進行晶片接合薄膜3的熱固化的情況下進行。
所述密封製程是利用密封樹脂8將半導體晶片5密封的製程。本製程是為了保護搭載在被黏物6上的半導體晶片5或焊線7而進行的。本製程通過用模具將密封用的樹脂成型來進行。作為密封樹脂8，例如可以使用環氧類樹脂。樹脂密封時的加熱溫度通常在175℃下進行60~90秒，但是，本發明不限於此，例如，也可以在165℃~185℃下固化幾分鐘。由此，在使密封樹脂固化的同時介隔晶片接合薄膜3將半導體晶片5與被黏物6固著。即，本發明中，即使在不進行後述的後固化製程的情況下，本製程中也可以利用晶片接合薄膜3進行固著，從而可以有助於減少製造製程數及縮短半導體裝置的製造時間。
所述後固化製程中，使在所述密封製程中固化不足的密封樹脂8完全固化。即使在密封製程中晶片接合薄膜3未完全熱固化的情況下，在本製程中也可以與密封樹脂8一起實現晶片接 合薄膜3的完全熱固化。本製程中的加熱溫度因密封樹脂的種類而異，例如，在165℃~185℃的範圍內，加熱時間為約0.5小時~約8小時。
在上述實施方式中，對於晶片接合薄膜的直徑小於切割薄膜的直徑的情況進行了說明，但是，本發明不限於該例，晶片接合薄膜的直徑也可以與切割薄膜的直徑相同或大於切割薄膜的直徑。此時，切割薄膜的薄膜檢測用光最先透射的部分，為切割薄膜與晶片接合薄膜積層的部分。即，此時，切割薄膜的薄膜檢測光最先透射的部分中帶有保護薄膜的切割薄膜的透射率相當於保護薄膜與切割薄膜以及晶片接合薄膜的積層體的透射率。此時，晶片接合薄膜對波長600nm~700nm的透射率優選為50%~80%。另外，晶片接合薄膜與切割薄膜的透射率之差優選為10%以上。另外，晶片接合薄膜與保護薄膜的透射率之差優選為10%以上。
上述實施方式中，對於整個切割薄膜11被著色、整個切割薄膜11上設置有印刷層、或者切割薄膜11的基材1的整個面進行了壓花處理，由此透射率T1與透射率T2之差為20%以上的情況進行了說明。但是，本發明不限於該例，關於所述透射率之差，只要保護薄膜的透射率與切割薄膜的薄膜檢測用光最先透射的部分中帶有保護薄膜的切割薄膜的透射率之差為20%以上即可，例如，與保護薄膜的透射率的透射率之差為20%以上的部分也可以僅僅是離切割薄膜的薄膜檢測用光最先透射的部分(例 如，圖1(b)的部分17)沿薄膜的運送方向具有規定距離(例如，100μm~500μm)的部分。採用這樣的構成時，例如，只要將所述透射率之差為20%以上的部分著色即可。
實施例
以下，例示性地詳細說明本發明的優選實施例。但是，該實施例中記載的材料、調配量等如果不是特別限定的記載，則本發明的要旨不僅僅限於此。另外，以下提到“份”時是指“重量份”。
(切割薄膜的黏著劑層的製作)
在乙酸乙酯中通過常規方法將丙烯酸丁酯70份、丙烯酸乙酯30份、丙烯酸5份共聚，得到重量平均分子量80萬的丙烯酸類聚合物。然後，在該丙烯酸類聚合物100份中，調配作為交聯劑的多官能環氧化合物(三菱瓦斯化學股份有限公司製造，製品名：“TETRAD-C”)8份、作為光聚合起始劑的1-羥基環己基苯基酮7份，將它們在作為有機溶劑的甲苯中均勻溶解，得到濃度30重量%的丙烯酸類黏著劑組合物溶液。將該丙烯酸類黏著劑組合物溶液塗布到表1、表2所示的各實施例、各比較例的基材面上使得厚度為10μm，並在120℃乾燥3分鐘。然後，通過掩模僅對黏貼半導體晶圓的部分照射紫外線500mJ/cm2 ，得到黏貼半導體晶圓的部分被紫外線固化的切割薄膜。另外，實施例1的基材(PP(聚丙烯))為由futamura chemical股份有限公司製造的製品名“FVHK-LB#40 N100”的材料。實施例2的基材(PP(聚丙烯))為由 futamura chemical股份有限公司製造的製品名“FBS-LB#40 S-400X”的材料。實施例3的基材(PO(聚烯烴))是由三井化學股份有限公司製造的製品名“TPX”的材料。實施例4的基材(PVC(聚氯乙烯))是由日東電工股份有限公司製造的製品名“SPV-M4001”的材料。實施例5的基材(PVC(聚氯乙烯))是由日東電工股份有限公司製造的製品名“SPV-320”的材料。比較例1的基材(PET(聚對苯二甲酸乙二醇酯))是由三菱樹脂股份有限公司製造的製品名“MRA-38”的材料。比較例2的基材(PET(聚對苯二甲酸乙二醇酯))是由三菱樹脂股份有限公司製造的製品名“MRF-50”的材料。
(晶片接合薄膜的製作)
將下述(a)~(d)溶解到甲基乙基酮中，得到濃度23.6重量%的接著劑組合物溶液。
(a)環氧樹脂(JER股份有限公司製造，EPIKOT 1001)32重量份
(b)酚醛樹脂(三井化学股份有限公司製造，MIREX XLC-4L)34重量份
(c)以丙烯酸乙酯-甲基丙烯酸甲酯为主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造，SG-708-6)100重量份
(d)球形二氧化矽(admatechs股份有限公司製造，SO-25R)110重量份
將該接著劑組合物溶液塗布到經矽酮脫模處理後的厚度100μm的聚對苯二甲酸乙二醇酯薄膜構成的脫模處理薄膜(剝離襯墊)上，然後在120℃乾燥3分鐘。由此，製作厚度10μm的晶片接合薄膜。
(帶有保護薄膜的切割薄膜的製作)
將所製作的各實施例、各比較例的切割薄膜各自沖裁為直徑370mm的圓形。然後，將所製作的晶片接合薄膜沖裁為直徑320mm的圓形，並轉印到各切割薄膜上。轉印以使切割薄膜的黏著劑層與晶片接合薄膜對向的方式進行。然後，將經矽酮脫模處理後的厚度35μm的聚對苯二甲酸乙二醇酯薄膜的保護薄膜黏貼到晶片接合薄膜側，得到本實施例、本比較例的帶有保護薄膜的切割薄膜。
(透射率的測定)
透射率的測定中，使用日本分光公司製造的分光光度計(製品名“V-670”)，將測定模式設定為%T(透射率測定)、測定波長區域設定為190nm~800nm來進行。將此時的波長650nm下的透射率作為測定值。結果，保護薄膜的波長650nm下的透射率為88.8%。另外，切割薄膜的波長650nm下的透射率(%)、保護薄膜與切割薄膜的積層部分的透射率(%)如表1和表2所示。另外，表1和表2中示出了保護薄膜與切割薄膜的積層部分的透射率與保護薄膜的透射率之差。
(感測器識別性)
使用檢測保護薄膜上的切割薄膜的感測器和將檢測到的切割薄膜從保護薄膜上剝離並黏貼半導體晶圓的晶圓安裝裝置，進行感測器識別性試驗。將感測器識別切割薄膜並且可以進行晶片安裝的情況評價為○，將沒有識別切割薄膜並且不能進行晶片安裝的情況評價為×。結果如表1和表2所示。
<感測器的條件>
感測器：KEYENCE公司製造的LV-11SB
感測頭：線性光回歸反射型(型號：LV-S62)
檢測距離：50mm
<黏貼條件>
晶圓安裝裝置：日東精機公司製造：MA-3000III
黏貼速度：10mm/秒
繞出速度：10mm/秒
(霧度值)
對於實施例3的基材，測定霧度值。霧度值的測定具體而言利用霧度計(“NDH2000”，日本電色工業股份有限公司製造)進行。
霧度(%)=Td/Tt×100
Td：擴散透射率
Tt：總光線透射率
結果如表1所示。
(結果)
從表1、表2的結果可以看出，保護薄膜與切割薄膜的積層部分的透射率與保護薄膜的透射率之差為20%以上時，可以利用感測器識別切割薄膜。
1‧‧‧基材
2‧‧‧黏著劑層
3‧‧‧晶片接合薄膜
10‧‧‧帶有保護薄膜的切割薄膜
11‧‧‧切割薄膜
14‧‧‧保護薄膜
16、17‧‧‧部分
L‧‧‧薄膜檢測用光
T1、T2‧‧‧透射率

Claims (4)

  1. 一種帶有保護薄膜的切割薄膜，其積層有具有黏著劑層的切割薄膜以及保護薄膜，其特徵在於：所述保護薄膜對波長600nm~700nm的透射率，與所述切割薄膜的薄膜檢測用光最先透射的部分中的所述帶有保護薄膜的切割薄膜對波長600nm~700nm的透射率之差為20%以上；所述切割薄膜的薄膜檢測用光最先透射的部分中的所述帶有保護薄膜的切割薄膜對波長600nm~700nm的透射率為0%~70%；所述保護薄膜的透射率為75%~100%。
  2. 如申請專利範圍第1項所述的帶有保護薄膜的切割薄膜，其中，所述切割薄膜具有基材以及積層在所述基材上的所述黏著劑層，且所述基材進行了壓花處理。
  3. 如申請專利範圍第1項所述的帶有保護薄膜的切割薄膜，其中，所述切割薄膜具有基材以及積層在所述基材上的所述黏著劑層，且所述基材被著色。
  4. 如申請專利範圍第1項至第3項中任一項所述的帶有保護薄膜的切割薄膜，其中，在所述切割薄膜的所述黏著劑層上，積層有晶片接合薄膜。
TW102136133A 2011-03-11 2012-03-08 帶有保護薄膜的切割薄膜 TWI433230B (zh)

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US20140106106A1 (en) 2014-04-17
CN102673076A (zh) 2012-09-19
TWI415181B (zh) 2013-11-11
JP2012191048A (ja) 2012-10-04
US20120231236A1 (en) 2012-09-13
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JP5036887B1 (ja) 2012-09-26
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