TWI433229B - 半導體裝置用薄膜的製造方法 - Google Patents
半導體裝置用薄膜的製造方法 Download PDFInfo
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- TWI433229B TWI433229B TW101107878A TW101107878A TWI433229B TW I433229 B TWI433229 B TW I433229B TW 101107878 A TW101107878 A TW 101107878A TW 101107878 A TW101107878 A TW 101107878A TW I433229 B TWI433229 B TW I433229B
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- film
- wafer bonding
- wafer
- dicing
- bonding film
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- 239000004065 semiconductor Substances 0.000 title claims description 110
- 238000000034 method Methods 0.000 title claims description 67
- 239000010408 film Substances 0.000 claims description 322
- 239000000853 adhesive Substances 0.000 claims description 56
- 230000001070 adhesive effect Effects 0.000 claims description 55
- 238000002834 transmittance Methods 0.000 claims description 55
- 230000001681 protective effect Effects 0.000 claims description 45
- 238000004519 manufacturing process Methods 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 22
- 239000000945 filler Substances 0.000 claims description 20
- 238000004080 punching Methods 0.000 claims description 10
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229920001169 thermoplastic Polymers 0.000 claims 1
- 239000004416 thermosoftening plastic Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 173
- -1 polyethylene Polymers 0.000 description 73
- 239000012790 adhesive layer Substances 0.000 description 44
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 41
- 230000005855 radiation Effects 0.000 description 33
- 229920005989 resin Polymers 0.000 description 33
- 239000011347 resin Substances 0.000 description 33
- 239000000178 monomer Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 29
- 239000003822 epoxy resin Substances 0.000 description 28
- 229920000647 polyepoxide Polymers 0.000 description 28
- 239000000203 mixture Substances 0.000 description 23
- 229920000058 polyacrylate Polymers 0.000 description 23
- 238000005520 cutting process Methods 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 19
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 18
- 239000005011 phenolic resin Substances 0.000 description 18
- 239000000243 solution Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 15
- 229920000139 polyethylene terephthalate Polymers 0.000 description 15
- 239000005020 polyethylene terephthalate Substances 0.000 description 15
- 229920000642 polymer Polymers 0.000 description 15
- 238000007789 sealing Methods 0.000 description 15
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 13
- 239000011248 coating agent Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 10
- 229920005601 base polymer Polymers 0.000 description 10
- 229920003986 novolac Polymers 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 8
- 229910000420 cerium oxide Inorganic materials 0.000 description 8
- 238000001723 curing Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 150000002148 esters Chemical class 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 8
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- XPNLOZNCOBKRNJ-UHFFFAOYSA-N ethyl prop-2-enoate;methyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C=C.COC(=O)C(C)=C XPNLOZNCOBKRNJ-UHFFFAOYSA-N 0.000 description 6
- GVYLCNUFSHDAAW-UHFFFAOYSA-N mirex Chemical compound ClC12C(Cl)(Cl)C3(Cl)C4(Cl)C1(Cl)C1(Cl)C2(Cl)C3(Cl)C4(Cl)C1(Cl)Cl GVYLCNUFSHDAAW-UHFFFAOYSA-N 0.000 description 6
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 239000003999 initiator Substances 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 229940059574 pentaerithrityl Drugs 0.000 description 5
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 4
- 239000011256 inorganic filler Substances 0.000 description 4
- 229910003475 inorganic filler Inorganic materials 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 229920005992 thermoplastic resin Polymers 0.000 description 4
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229920001971 elastomer Polymers 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- 239000012948 isocyanate Substances 0.000 description 3
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002985 plastic film Substances 0.000 description 3
- 229920006255 plastic film Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000005060 rubber Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 3
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- LMVLMHGTZULBRX-UHFFFAOYSA-N 2-[2,2,2-tris(2-hydroxyphenyl)ethyl]phenol Chemical compound OC1=CC=CC=C1CC(C=1C(=CC=CC=1)O)(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LMVLMHGTZULBRX-UHFFFAOYSA-N 0.000 description 2
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 2
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical compound CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003522 acrylic cement Substances 0.000 description 2
- 238000007259 addition reaction Methods 0.000 description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical class OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000011231 conductive filler Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000007334 copolymerization reaction Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000011162 core material Substances 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229940119177 germanium dioxide Drugs 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 150000004702 methyl esters Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 229920001748 polybutylene Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000011417 postcuring Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 2
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 2
- 238000003847 radiation curing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 2
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical class C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- PHZFJRZBZBRNFK-UHFFFAOYSA-N 1,1'-biphenyl;9h-fluorene Chemical compound C1=CC=CC=C1C1=CC=CC=C1.C1=CC=C2CC3=CC=CC=C3C2=C1 PHZFJRZBZBRNFK-UHFFFAOYSA-N 0.000 description 1
- JRQJLSWAMYZFGP-UHFFFAOYSA-N 1,1'-biphenyl;phenol Chemical group OC1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 JRQJLSWAMYZFGP-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- VNQXSTWCDUXYEZ-UHFFFAOYSA-N 1,7,7-trimethylbicyclo[2.2.1]heptane-2,3-dione Chemical compound C1CC2(C)C(=O)C(=O)C1C2(C)C VNQXSTWCDUXYEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- YIKSHDNOAYSSPX-UHFFFAOYSA-N 1-propan-2-ylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2C(C)C YIKSHDNOAYSSPX-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- BRKORVYTKKLNKX-UHFFFAOYSA-N 2,4-di(propan-2-yl)thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC(C(C)C)=C3SC2=C1 BRKORVYTKKLNKX-UHFFFAOYSA-N 0.000 description 1
- UXCIJKOCUAQMKD-UHFFFAOYSA-N 2,4-dichlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC(Cl)=C3SC2=C1 UXCIJKOCUAQMKD-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- LZHUBCULTHIFNO-UHFFFAOYSA-N 2,4-dihydroxy-1,5-bis[4-(2-hydroxyethoxy)phenyl]-2,4-dimethylpentan-3-one Chemical compound C=1C=C(OCCO)C=CC=1CC(C)(O)C(=O)C(O)(C)CC1=CC=C(OCCO)C=C1 LZHUBCULTHIFNO-UHFFFAOYSA-N 0.000 description 1
- LCHAFMWSFCONOO-UHFFFAOYSA-N 2,4-dimethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC(C)=C3SC2=C1 LCHAFMWSFCONOO-UHFFFAOYSA-N 0.000 description 1
- WULAHPYSGCVQHM-UHFFFAOYSA-N 2-(2-ethenoxyethoxy)ethanol Chemical compound OCCOCCOC=C WULAHPYSGCVQHM-UHFFFAOYSA-N 0.000 description 1
- NTINFTOOVNKGIU-UHFFFAOYSA-N 2-(2-hydroxyethoxycarbonyl)benzoic acid Chemical compound OCCOC(=O)C1=CC=CC=C1C(O)=O NTINFTOOVNKGIU-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- VUIWJRYTWUGOOF-UHFFFAOYSA-N 2-ethenoxyethanol Chemical compound OCCOC=C VUIWJRYTWUGOOF-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- NPSJHQMIVNJLNN-UHFFFAOYSA-N 2-ethylhexyl 4-nitrobenzoate Chemical compound CCCCC(CC)COC(=O)C1=CC=C([N+]([O-])=O)C=C1 NPSJHQMIVNJLNN-UHFFFAOYSA-N 0.000 description 1
- 239000004808 2-ethylhexylester Substances 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical class OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- YRNDGUSDBCARGC-UHFFFAOYSA-N 2-methoxyacetophenone Chemical compound COCC(=O)C1=CC=CC=C1 YRNDGUSDBCARGC-UHFFFAOYSA-N 0.000 description 1
- DMSRIHVZKOZKRV-UHFFFAOYSA-N 2-methyl-1-(2-methylprop-2-enoylamino)propane-1-sulfonic acid Chemical compound CC(C)C(S(O)(=O)=O)NC(=O)C(C)=C DMSRIHVZKOZKRV-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- JMMZCWZIJXAGKW-UHFFFAOYSA-N 2-methylpent-2-ene Chemical compound CCC=C(C)C JMMZCWZIJXAGKW-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- HMBNQNDUEFFFNZ-UHFFFAOYSA-N 4-ethenoxybutan-1-ol Chemical compound OCCCCOC=C HMBNQNDUEFFFNZ-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- NDWUBGAGUCISDV-UHFFFAOYSA-N 4-hydroxybutyl prop-2-enoate Chemical compound OCCCCOC(=O)C=C NDWUBGAGUCISDV-UHFFFAOYSA-N 0.000 description 1
- OCIFJWVZZUDMRL-UHFFFAOYSA-N 6-hydroxyhexyl prop-2-enoate Chemical compound OCCCCCCOC(=O)C=C OCIFJWVZZUDMRL-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- JQOUDLLEDKJCTQ-UHFFFAOYSA-N C(C)N=C=O.C(=O)(C(=C)C)C1OC1 Chemical compound C(C)N=C=O.C(=O)(C(=C)C)C1OC1 JQOUDLLEDKJCTQ-UHFFFAOYSA-N 0.000 description 1
- XIEJKNZEPDMQOY-UHFFFAOYSA-N C(CC)C(C(OCC)(OCC)C)CCCCCCCC Chemical compound C(CC)C(C(OCC)(OCC)C)CCCCCCCC XIEJKNZEPDMQOY-UHFFFAOYSA-N 0.000 description 1
- GRKXCPUJDIGBMU-UHFFFAOYSA-N C(CCCCCCCCC)C1=C(C2=CC=CC=C2C=C1)S(=O)(=O)O.C=CC Chemical compound C(CCCCCCCCC)C1=C(C2=CC=CC=C2C=C1)S(=O)(=O)O.C=CC GRKXCPUJDIGBMU-UHFFFAOYSA-N 0.000 description 1
- VPLKXGORNUYFBO-UHFFFAOYSA-N C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC Chemical compound C1(CC2C(CC1)O2)CCC(C(OC)(OC)OC)CCCCCCCC VPLKXGORNUYFBO-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PMVSDNDAUGGCCE-TYYBGVCCSA-L Ferrous fumarate Chemical compound [Fe+2].[O-]C(=O)\C=C\C([O-])=O PMVSDNDAUGGCCE-TYYBGVCCSA-L 0.000 description 1
- 240000006927 Foeniculum vulgare Species 0.000 description 1
- 235000004204 Foeniculum vulgare Nutrition 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- BWPYBAJTDILQPY-UHFFFAOYSA-N Methoxyphenone Chemical compound C1=C(C)C(OC)=CC=C1C(=O)C1=CC=CC(C)=C1 BWPYBAJTDILQPY-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 229920002302 Nylon 6,6 Polymers 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RYYWUUFWQRZTIU-UHFFFAOYSA-N Thiophosphoric acid Chemical class OP(O)(S)=O RYYWUUFWQRZTIU-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 239000012711 adhesive precursor Substances 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 229920005603 alternating copolymer Polymers 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 125000001204 arachidyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- VSMKVYMEPNUODT-UHFFFAOYSA-N benzenecarboximidamide;benzoic acid Chemical compound NC(=[NH2+])C1=CC=CC=C1.[O-]C(=O)C1=CC=CC=C1 VSMKVYMEPNUODT-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000000071 blow moulding Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229930006711 bornane-2,3-dione Natural products 0.000 description 1
- 238000012662 bulk polymerization Methods 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- FNAQSUUGMSOBHW-UHFFFAOYSA-H calcium citrate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O FNAQSUUGMSOBHW-UHFFFAOYSA-H 0.000 description 1
- 239000001354 calcium citrate Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- GCFAUZGWPDYAJN-UHFFFAOYSA-N cyclohexyl 3-phenylprop-2-enoate Chemical compound C=1C=CC=CC=1C=CC(=O)OC1CCCCC1 GCFAUZGWPDYAJN-UHFFFAOYSA-N 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000009820 dry lamination Methods 0.000 description 1
- 238000007720 emulsion polymerization reaction Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000004494 ethyl ester group Chemical group 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229920006228 ethylene acrylate copolymer Polymers 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- FWQHNLCNFPYBCA-UHFFFAOYSA-N fluoran Chemical compound C12=CC=CC=C2OC2=CC=CC=C2C11OC(=O)C2=CC=CC=C21 FWQHNLCNFPYBCA-UHFFFAOYSA-N 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- 229920001903 high density polyethylene Polymers 0.000 description 1
- 239000004700 high-density polyethylene Substances 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000004337 magnesium citrate Substances 0.000 description 1
- 229960005336 magnesium citrate Drugs 0.000 description 1
- 235000002538 magnesium citrate Nutrition 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229920001179 medium density polyethylene Polymers 0.000 description 1
- 239000004701 medium-density polyethylene Substances 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 150000002898 organic sulfur compounds Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical class P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001083 polybutene Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920006289 polycarbonate film Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 150000004291 polyenes Chemical class 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920005629 polypropylene homopolymer Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000003431 steroids Chemical class 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- XDLNRRRJZOJTRW-UHFFFAOYSA-N thiohypochlorous acid Chemical compound ClS XDLNRRRJZOJTRW-UHFFFAOYSA-N 0.000 description 1
- 235000013337 tricalcium citrate Nutrition 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PLSARIKBYIPYPF-UHFFFAOYSA-H trimagnesium dicitrate Chemical compound [Mg+2].[Mg+2].[Mg+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O PLSARIKBYIPYPF-UHFFFAOYSA-H 0.000 description 1
- LZTRCELOJRDYMQ-UHFFFAOYSA-N triphenylmethanol Chemical compound C=1C=CC=CC=1C(C=1C=CC=CC=1)(O)C1=CC=CC=C1 LZTRCELOJRDYMQ-UHFFFAOYSA-N 0.000 description 1
- 229920001862 ultra low molecular weight polyethylene Polymers 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229920006337 unsaturated polyester resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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Description
本發明是關於半導體裝置用薄膜的製造方法。
以往,半導體晶圓在預先以大面積製作後,切割(切斷分離)為晶片狀並移送到擴張製程。切割薄膜在該切割時用於固定半導體晶圓。
固定到切割薄膜上的半導體晶圓,在切割為晶片狀並為了將各晶片彼此分離而在擴張環上沿面方向同樣地擴張後,進行拾取。
另外,以往提出了在切割製程中接著保持半導體晶圓並且也提供安裝製程所需的晶片固著用的晶片接合薄膜的切割薄膜(例如,參考專利文獻1)。
上述的帶有晶片接合薄膜的切割薄膜,例如,可以通過(1)製作晶片接合薄膜,並按照將要黏貼的半導體晶圓的形狀進行沖裁,(2)在切割薄膜上以規定的間隔積層沖裁後的晶片接合薄膜,(3)再以晶片接合薄膜側為黏貼面而黏貼保護薄膜,(4)以晶片接合薄膜為中心對切割薄膜進行沖裁,並將保護薄膜剝離來得到。另外,例如,可以通過(1)製作晶片接合薄膜,並按照將要黏貼的半導體晶圓的形狀進行沖裁,(2)在切割薄膜上以規定的間隔積層沖裁後的晶片接合薄膜,(3)以晶片接合薄膜為中心對切割薄膜進行沖裁來得到。作為以晶片接合薄膜為中心對切割薄膜進行沖裁的原因,是因為:通常切割環黏貼在切割薄膜的周緣部
使用,當切割環接觸到晶片接合薄膜時,切割環會受到污染。另外是因為:晶片接合薄膜不處於切割環薄膜的中心時,在晶圓安裝製程中,晶圓與晶片接合薄膜會在位置偏移的狀態下黏貼在一起。
先前技術文獻
專利文獻
專利文獻1:日本特開昭60-57642號公報
但是,現有製造方法中,有時難以以晶片接合薄膜為中心對切割薄膜準確地進行沖裁,因此存在引起帶有晶片接合薄膜的切割薄膜的製造成品率下降的問題。
本發明鑑於所述問題而創立,其目的在於提供晶片接合薄膜處於切割薄膜的中心的半導體裝置用薄膜的製造方法以及該半導體裝置用薄膜。
本申請發明人為了解決所述現有問題,對半導體裝置用薄膜的製造方法以及半導體裝置用薄膜進行了研究。結果發現,通過採用下述的構成,可以提供晶片接合薄膜處於切割薄膜的中心的半導體裝置用薄膜的製造方法、以及該半導體裝置用薄膜,從而完成了本發明。
即,本發明的半導體裝置用薄膜製造方法,為通過切割薄膜、晶片接合薄膜和保護薄膜以該順序積層而得到的半導體裝置用薄膜的製造方法,其特徵在於,所述半導體裝置用薄膜的製造方法包括:製作切割薄膜的製程,製作晶片接合薄膜的製程,按照將要黏貼的半導體晶圓的形狀
對所述晶片接合薄膜進行沖裁的製程,在所述切割薄膜上以規定的間隔黏貼多個所述晶片接合薄膜,並且將晶片接合薄膜側作為黏貼面而黏貼保護薄膜的製程,照射波長400nm~800nm的光線,基於所得到的光線透射率檢測晶片接合薄膜的位置的製程,和基於檢測到的晶片接合薄膜的位置,對所述切割薄膜進行沖裁的製程;將所述切割薄膜和所述保護薄膜的積層部分對波長400nm~800nm的光線透射率設為T1、將所述切割薄膜與所述晶片接合薄膜和所述保護薄膜的積層部分對波長400~800nm的光線透射率設為T2時,以下述式(A)所表示的T為4以上,T=100-((T2/T1)×100) (A)。
根據所述構成,通過製作切割薄膜的製程、製作晶片接合薄膜的製程、將所述晶片接合薄膜按照將要黏貼的半導體晶圓的形狀進行沖裁的製程、在所述切割薄膜上以規定的間隔黏貼多個所述晶片接合薄膜以及以晶片接合薄膜側為黏貼面黏貼保護薄膜的製程,成為在一個連續的切割薄膜與一個連續的保護薄膜之間,以規定的間隔黏貼有多個晶片接合薄膜的狀態。
然後,照射波長400nm~800nm的光線,並基於所得到的光線透射率檢測晶片接合薄膜的位置。具體而言,光線透射率以一定水平以上變化時,例如,光線透射率從光線透射率T1變化為光線透射率T2從而以所述式(A)所表示的T為4以上時,該部位作為晶片接合薄膜的一端被檢測到。而且,基於所檢測到的晶片接合薄膜的位置,對切
割薄膜進行沖裁。該切割薄膜的沖裁製程,基於晶片接合薄膜的位置進行,因此可以使晶片接合薄膜位於被沖裁的各切割薄膜的中心。
可見,根據所述構成,可以製造晶片接合薄膜處於切割薄膜中心的半導體裝置用薄膜。
所述構成中,優選所述光線透射率T1為2%~80%。
所述構成中,優選所述光線透射率T2為0.1%~70%。
(半導體裝置用薄膜)
對於本發明的一個實施方式的半導體裝置用薄膜,以下進行說明。圖1(a)是表示本發明的一個實施方式的半導體裝置用薄膜的示意剖視圖,圖1(b)為其俯視圖。圖2是表示圖1(a)和圖1(b)所示的半導體裝置用薄膜的一部分的示意剖視圖。
如圖1(a)、圖1(b)所示,半導體裝置用薄膜10具有在長尺寸的保護薄膜14上積層有俯視為圓形的切割薄膜11的構成。切割薄膜11具有在基材1上積層有黏著劑層2的構成,在黏著劑層2上積層有直徑比切割薄膜11小的晶片接合薄膜3。切割薄膜11以使黏著劑層2與晶片接合薄膜3對向的方式積層在保護薄膜14上。
將切割薄膜11與保護薄膜14的積層部分對波長400nm~800nm的光線透射率設為T1、將切割薄膜11與晶片接合薄膜3和保護薄膜14的積層部分對波長400nm~800nm的光線透射率設為T2時,以下式(A)所表示
的T為4以上。所述T更優選為10以上。另外,所述T雖然越大越好,但是,例如可以設定為50以下、30以下。
T=100-((T2/T1)×100) (A)
半導體裝置用薄膜10的製造如後所詳述,首先在切割薄膜11上以規定的間隔黏貼多個晶片接合薄膜3,所述多個晶片接合薄膜3是按照將要黏貼的半導體晶圓的形狀沖裁而成,並且以晶片接合薄膜3側為黏貼面黏貼到保護薄膜14上。由此,成為在一個連續的切割薄膜11與一個連續的保護薄膜14之間,以規定的間隔黏貼有多個晶片接合薄膜3的狀態。然後,照射波長400nm~800nm的光線,並基於所得到的光線透射率檢測晶片接合薄膜3的位置。具體而言,光線透射率以一定水平以上變化時,例如,光線透射率從光線透射率T1變化為光線透射率T2從而以式(A)所表示的T為4以上時,該部位作為晶片接合薄膜3的一端被檢測到。而且,基於所檢測到的晶片接合薄膜3的位置,對切割薄膜11進行沖裁。該切割薄膜11的沖裁製程,基於晶片接合薄膜3的位置進行,因此可以使晶片接合薄膜3位於被沖裁的各切割薄膜11的中心。半導體裝置用薄膜10通過上述製造方法製造,所述T為4以上,因此晶片接合薄膜3位於切割薄膜11的中心。
光線透射率T1優選為2%~80%,更優選2%~50%,進一步優選2%~20%,特別優選2%~10%。光線透射率T1為2%~80%時,易於使所述T為4以上。
光線透射率T2優選為0.1%~70%,更優選
0.1%~40%,進一步優選0.1%~10%。光線透射率T2為0.1%~70%時,易於使所述T為4以上。
所述基材1優選使用具有紫外線透射性的基材,其作為切割薄膜11的強度母體。可以列舉例如:低密度聚乙烯、線性聚乙烯、中密度聚乙烯、高密度聚乙烯、超低密度聚乙烯、無規共聚聚丙烯、嵌段共聚聚丙烯、均聚丙烯、聚丁烯、聚甲基戊烯等聚烯烴、乙烯-乙酸乙烯酯共聚物、離聚物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯(無規、交替)共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚胺酯、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等聚酯、聚碳酸酯、聚醯亞胺、聚醚醚酮、聚醯亞胺、聚醚醯亞胺、聚醯胺、全芳族聚醯胺、聚苯硫醚、芳族聚醯胺(紙)、玻璃、玻璃布、含氟樹脂、聚氯乙烯、聚偏二氯乙烯、纖維素類樹脂、矽酮樹脂、金屬(箔)、紙等。
另外,作為基材1的材料,可以列舉所述樹脂的交聯體等聚合物。所述塑料薄膜可以不拉伸而使用,也可以根據需要進行單軸或雙軸拉伸處理後使用。利用通過拉伸處理等而賦予了熱收縮性的樹脂片,在切割後使該基材1熱收縮,藉此可以減小黏著劑層2與晶片接合薄膜3的接著面積,從而可以容易地回收半導體晶片(半導體元件)。
另外,為了提高與鄰接層的密著性、保持性等,基材1的表面可以實施慣用的表面處理,例如,化學或物理處理如鉻酸處理、臭氧暴露、火焰暴露、高壓電擊暴露、電離放射線處理等,利用底塗劑(例如後述的黏著物質)的塗
布處理。所述基材1可以適當地選擇使用同種或不同種類的材料,根據需要也可以使用將數種材料共混後的材料。
基材1的厚度,優選為20μm以上且200μm以下,更優選40μm以上且180μm以下,進一步優選60μm以上且170μm以下。通過將基材1的厚度設定為20μm以上且200μm以下,可以控制切割薄膜的光線透射率。
作為黏著劑層2的形成中所使用的黏著劑,沒有特別限制,例如,可以使用丙烯酸類黏著劑、橡膠類黏著劑等一般的壓敏接著劑。作為所述壓敏接著劑,從半導體晶圓或玻璃等避忌污染的電子部件的超純水或醇等有機溶劑的清潔洗滌性等的觀點考慮,優選以丙烯酸類聚合物為基礎聚合物的丙烯酸類黏著劑。
作為所述丙烯酸類聚合物,可以列舉例如:使用(甲基)丙烯酸烷基酯(例如,甲酯、乙酯、丙酯、異丙酯、丁酯、異丁酯、仲丁酯、第三丁酯、戊酯、異戊酯、己酯、庚酯、辛酯、2-乙基己酯、異辛酯、壬酯、癸酯、異癸酯、十一烷酯、十二烷酯、十三烷酯、十四烷酯、十六烷酯、十八烷酯、二十烷酯等烷基的碳原子數1~30、特別是碳原子數4~18的直鏈或支鏈烷基酯等)和(甲基)丙烯酸環烷酯(例如,環戊酯、環己酯等)中的一種或兩種以上作為單體成分的丙烯酸類聚合物等。另外,(甲基)丙烯酸酯表示丙烯酸酯和/或甲基丙烯酸酯,本發明的(甲基)全部表示相同的含義。
為了改善凝聚力、耐熱性等,所述丙烯酸類聚合物根
據需要可以含有與能夠同所述(甲基)丙烯酸烷基酯或環烷酯共聚的其它單體成分對應的單元。作為這樣的單體成分,可以列舉例如:含羧基單體如丙烯酸、甲基丙烯酸、(甲基)丙烯酸羧乙酯、(甲基)丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸、巴豆酸等;酸酐單體如馬來酸酐、衣康酸酐等;含羥基單體如(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯、(甲基)丙烯酸(4-羥甲基環己基)甲酯等;含磺酸基單體如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺-2-甲基丙磺酸、(甲基)丙烯醯胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯醯氧萘磺酸等;含磷酸基單體如丙烯醯磷酸-2-羥基乙酯等;丙烯醯胺、丙烯腈等。這些可共聚單體成分可以使用一種或兩種以上。這些可共聚單體的使用量優選為全部單體成分的40重量%以下。
另外,為了進行交聯,所述丙烯酸類聚合物根據需要也可以含有多官能單體等作為共聚用單體成分。作為這樣的多官能單體,可以列舉例如:己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、環氧(甲基)丙烯酸酯、聚酯(甲基)丙烯酸酯、胺基甲酸酯(甲基)丙烯酸酯
等。這些多官能單體可以使用一種或兩種以上。多官能單體的使用量從黏著特性等觀點考慮優選為全部單體成分的30重量%以下。
所述丙烯酸類聚合物可以通過將單一單體或兩種以上單體的混合物聚合來得到。聚合可以通過溶液聚合、乳液聚合、塊狀聚合、懸浮聚合等任意方式進行。從防止對潔淨被黏物的污染等觀點考慮,優選低分子量物質的含量少。從該點考慮,丙烯酸類聚合物的數量平均分子量優選為約30萬以上,更優選約40萬~約300萬。
另外,為了提高作為基礎聚合物的丙烯酸類聚合物等的數量平均分子量,所述黏著劑中也可以適當採用外部交聯劑。外部交聯方法的具體手段可以列舉:添加多異氰酸酯化合物、環氧化合物、氮丙啶化合物、三聚氰胺類交聯劑等所謂的交聯劑使其反應的方法。使用外部交聯劑時,其使用量根據與需要交聯的基礎聚合物的平衡以及作為黏著劑的使用用途適當確定。一般而言,相對於所述基礎聚合物100重量份,優選調配約5重量份以下,更優選調配約0.1重量份~約5重量份。另外,根據需要,在黏著劑中除所述成分以外也可以使用各種增黏劑、抗老化劑等添加劑。
黏著劑層2可以由輻射線固化型黏著劑形成。輻射線固化型黏著劑通過紫外線等輻射線的照射使交聯度增大,從而可以容易地降低其黏著力。例如,通過僅對圖2所示的黏著劑層2的與工件黏貼部分對應的部分2a照射輻射
線,可以設置與部分2b的黏著力的差異。
另外,通過按照圖2所示的晶片接合薄膜3使輻射線固化型黏著劑層2固化,可以容易地形成黏著力顯著下降的所述部分2a。由於在固化且黏著力下降的所述部分2a上黏貼有晶片接合薄膜3,因此黏著劑層2的所述部分2a與晶片接合薄膜3的界面具有在拾取時容易剝離的性質。另一方面,未照射輻射線的部分具有充分的黏著力,形成所述部分2b。所述部分2b可以將晶圓環(wafer ring)固定。
輻射線固化型黏著劑可以沒有特別限制地使用具有碳碳雙鍵等輻射線固化性官能基、並且顯示黏著性的輻射線固化型黏著劑。作為輻射線固化型黏著劑,可以例示例如:在所述丙烯酸類黏著劑、橡膠類黏著劑等一般的壓敏黏著劑中調配有輻射線固化性的單體成分或低聚物成分的添加型輻射線固化型黏著劑。
作為用於調配的輻射線固化性單體成分,可以列舉例如:胺基甲酸酯低聚物、胺基甲酸酯(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等。另外,輻射線固化性低聚物成分可以列舉聚胺酯類、聚醚類、聚酯類、聚碳酸酯類、聚丁二烯類等各種低聚物,其分子量在約100~約30000的範圍內是適當的。輻射線固化性單體成分或低聚物成分的調配量可以根據所述黏著劑層的種類
適當地確定能夠降低黏著劑層的黏著力的量。一般而言,相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份,例如為約5重量份~約500重量份,優選約40重量份~約150重量份。
另外,作為輻射線固化型黏著劑,除了前面說明的添加型輻射線固化型黏著劑以外,還可以列舉使用在聚合物側鏈或主鏈中或者主鏈末端具有碳碳雙鍵的聚合物作為基礎聚合物的內在型輻射線固化型黏著劑。內在型輻射線固化型黏著劑無需含有或者多數不含有作為低分子量成分的低聚物成分等,因此低聚物成分等不會隨時間推移在黏著劑中遷移,從而可以形成穩定的層結構的黏著劑層,因此優選。
所述具有碳碳雙鍵的基礎聚合物,可以沒有特別限制地使用具有碳碳雙鍵並且具有黏著性的聚合物。作為這樣的基礎聚合物,優選以丙烯酸類聚合物作為基本骨架的聚合物。作為丙烯酸類聚合物的基本骨架,可以列舉前面例示過的丙烯酸類聚合物。
在所述丙烯酸類聚合物中引入碳碳雙鍵的方法沒有特別限制,可以採用各種方法,但是,將碳碳雙鍵引入聚合物側鏈的方法在分子設計上比較容易。可以列舉例如:預先將具有官能基的單體與丙烯酸類聚合物共聚後,使具有能夠與該官能基反應的官能基和碳碳雙鍵的化合物在保持碳碳雙鍵的輻射線固化性的情況下進行縮合或加成反應的方法。
作為這些官能基的組合例,可以列舉例如:羧基與環氧基、羧基與氮丙啶基、羥基與異氰酸酯基等。這些官能基的組合中考慮反應跟蹤的容易性,優選羥基與異氰酸酯基的組合。另外,如果是通過這些官能基的組合而生成所述具有碳碳雙鍵的丙烯酸類聚合物的組合,則官能基可以在丙烯酸類聚合物與所述化合物中的任意一方上,在所述的優選組合中,優選丙烯酸類聚合物具有羥基、所述化合物具有異氰酸酯基的情況。此時,作為具有碳碳雙鍵的異氰酸酯化合物,可以列舉例如:甲基丙烯醯異氰酸酯、2-甲基丙烯醯氧乙基異氰酸酯、間異丙烯基-α,α-二甲基聯苯醯異氰酸酯等。另外,作為丙烯酸類聚合物,可以使用將前面例示的含羥基單體或2-羥基乙基乙烯基醚、4-羥基丁基乙烯基醚、二乙二醇單乙烯基醚的醚類化合物等共聚而得到的聚合物。
所述內在型輻射線固化型黏著劑可以單獨使用所述具有碳碳雙鍵的基礎聚合物(特別是丙烯酸類聚合物),也可以在不損害特性的範圍內調配所述輻射線固化性單體成分或低聚物成分。輻射線固化性低聚物成分等相對於基礎聚合物100重量份通常在30重量份的範圍內,優選0重量份~10重量份的範圍。
所述輻射線固化型黏著劑在通過紫外線等固化時可以含有光聚合起始劑。作為光聚合起始劑,可以列舉例如:α-酮醇類化合物如4-(2-羥基乙氧基)苯基(2-羥基-2-丙基)酮、α-羥基-α,α’-二甲基苯乙酮、2-甲基-2-羥基苯丙酮、
1-羥基環己基苯基酮等;苯乙酮類化合物如甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2-甲基-1-[4-(甲硫基)苯基]-2-(N-嗎啉基)丙烷-1-酮等;苯偶姻醚類化合物如苯偶姻乙醚、苯偶姻異丙醚、茴香偶姻甲基醚等;縮酮類化合物如聯苯醯二甲基縮酮等;芳香族磺醯氯類化合物如2-萘磺醯氯等;光活性肟類化合物如1-苯基-1,2-丙烷二酮-2-(O-乙氧基羰基)肟等;二苯甲酮類化合物如二苯甲酮、苯甲醯苯甲酸、3,3’-二甲基-4-甲氧基二苯甲酮等;噻噸酮類化合物如噻噸酮、2-氯噻噸酮、2-甲基噻噸酮、2,4-二甲基噻噸酮、異丙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等;樟腦醌;鹵代酮;醯基膦氧化物;醯基膦酸酯等。光聚合起始劑的調配量相對於構成黏著劑的丙烯酸類聚合物等基礎聚合物100重量份,例如為約0.05重量份~約20重量份。
另外,作為輻射線固化型黏著劑,可以列舉例如:日本特開昭60-196956號公報中所公開的、含有具有2個以上不飽和鍵的加成聚合性化合物、具有環氧基的烷氧基矽烷等光聚合性化合物、和羰基化合物、有機硫化合物、過氧化物、胺、鎓鹽類化合物等光聚合起始劑的橡膠類黏著劑或丙烯酸類黏著劑等。
所述輻射線固化型的黏著劑層2中,根據需要也可以含有通過照射輻射線而著色的化合物。通過在黏著劑層2中含有通過照射輻射線而著色的化合物,可以僅將照射輻射線的部分著色。即,可以將圖2所示的與工件黏貼部分
對應的黏著劑層2a著色。由此,可以通過肉眼直接判斷黏著劑層2是否被照射了輻射線,可以容易識別工件黏貼部分,工件的黏貼也容易。另外,在利用光感測器等檢測半導體元件時,其檢測精度高,從而在半導體元件的拾取時不產生誤操作。
通過照射輻射線而著色的化合物,為在照射輻射線前無色或淺色、但是通過照射輻射線而有色的化合物。作為所述化合物的優選具體例,可以列舉隱色染料。作為隱色染料,可以優選使用慣用的三苯基甲烷類、熒烷類、吩噻嗪類、金胺類、螺吡喃類隱色染料。具體地可以列舉:3-[N-(對甲苯基胺基)]-7-苯胺基熒烷、3-[N-(對甲苯基)-N-甲基胺基]-7-苯胺基熒烷、3-[N-(對甲苯基)-N-乙基胺基]-7-苯胺基熒烷、3-二乙胺基-6-甲基-7-苯胺基熒烷、結晶紫內酯、4,4’,4”-三(二甲胺基)三苯基甲醇、4,4’,4”-三(二甲胺基)三苯基甲烷等。
作為優選與這些隱色染料一起使用的顯色劑,可以列舉一直以來使用的酚醛樹脂的預聚物、芳香族羧酸衍生物、活性白土等電子受體,另外,在使色調變化時,可以將各種公知的發色劑組合使用。
這樣的通過照射輻射線而著色的化合物,可以先溶解於有機溶劑等中後再包含在輻射線固化型黏著劑中,另外,也可以以細粉末形式包含在該黏著劑中。該化合物的使用比例希望在黏著劑層2中為10重量%以下,優選0.01重量%~10重量%,更優選0.5重量%~5重量%。該化合物
的比例超過10重量%時,照射到黏著劑層2的輻射線被該化合物過度吸收,因此黏著劑層2的所述部分2a的固化不充分,有時黏著力下降不充分。另一方面,為了充分著色,優選將該化合物的比例設定為0.01重量%以上。
利用輻射線固化型黏著劑來形成黏著劑層2的情況時,可以對黏著劑層2的一部分進行輻射線照射使得黏著劑層2中所述部分2a的黏著力<其它部分2b的黏著力。
作為在所述黏著劑層2中形成所述部分2a的方法,可以列舉:在支撐基材1上形成輻射線固化型黏著劑層2後,對所述部分2a局部地照射輻射線使其固化的方法。局部的輻射線照射可以通過形成有與所述部分2a以外的部分對應的圖案的光掩模來進行。另外,可以列舉點狀照射紫外線進行固化的方法等。輻射線固化型黏著劑層2的形成可以通過將設置在隔片上的輻射線固化型黏著劑層轉印到支撐基材1上來進行。局部的輻射線照射也可以對設置在隔片上的輻射線固化型黏著劑層2進行。
另外,利用輻射線固化型黏著劑來形成黏著劑層2的情況時,可以使用對支撐基材1的至少單面的、與所述部分2a對應的部分以外的部分的全部或局部進行遮光的基材,在該基材上形成輻射線固化型黏著劑層2後進行輻射線照射,使所述部分2a固化,從而形成黏著力下降的所述部分2a。作為遮光材料,可以通過印刷或蒸鍍等在支撐薄膜上製作能夠成為光掩模的材料。通過所述製造方法,可以有效地製造半導體裝置用薄膜10。
另外,照射輻射線時因氧產生固化障礙的情況下,期望利用任意方法從輻射線固化型黏著劑層2的表面隔絕氧(空氣)。可以列舉例如:用隔片將所述黏著劑層2的表面覆蓋的方法或者在氮氣氛圍中進行紫外線等輻射線的照射的方法等。
黏著劑層2的厚度沒有特別限制,從兼顧防止晶片切割面的缺陷和接著層的固定保持等觀點考慮,優選為約1μm~約50μm。優選2μm~30μm、更優選5μm~25μm。
晶片接合薄膜3的積層結構,如本實施方式所示,可以列舉僅由接著劑層的單層構成的結構或者在芯材的單面或兩面形成有接著劑層的多層結構。作為所述芯材,可以列舉例如:薄膜(例如,聚醯亞胺薄膜、聚酯薄膜、聚對苯二甲酸乙二醇酯薄膜、聚萘二甲酸乙二醇酯薄膜、聚碳酸酯薄膜等)、用玻璃纖維或塑料製無紡纖維強化的樹脂基板、矽基板或玻璃基板等。
作為構成晶片接合薄膜3的接著劑組合物,可以列舉將熱塑性樹脂和熱固性樹脂組合使用而得到的組合物。
作為所述熱固性樹脂,可以列舉:酚醛樹脂、胺基樹脂、不飽和聚酯樹脂、環氧樹脂、聚胺酯樹脂、矽酮樹脂或熱固性聚醯亞胺樹脂等。這些樹脂可以單獨使用或者兩種以上組合使用。特別優選腐蝕半導體元件的離子性雜質等的含量少的環氧樹脂。另外,作為環氧樹脂的固化劑,優選酚醛樹脂。
所述環氧樹脂,只要是通常作為接著劑組合物使用的
環氧樹脂則沒有特別限制,可以使用例如:雙酚A型、雙酚F型、雙酚S型、溴化雙酚A型、氫化雙酚A型、雙酚AF型、聯苯型、萘型、茀型、苯酚酚醛清漆型、鄰甲酚酚醛清漆型、三(羥苯基)甲烷型、四(羥苯基)乙烷型等雙官能環氧樹脂或多官能環氧樹脂、或者乙內醯脲型、異氰脲酸三縮水甘油酯型或縮水甘油胺型等環氧樹脂。這些環氧樹脂可以單獨使用或者兩種以上組合使用。這些環氧樹脂中,特別優選酚醛清漆型環氧樹脂、聯苯型環氧樹脂、三(羥苯基)甲烷型環氧樹脂或四(羥苯基)乙烷型環氧樹脂。這是因為:這些環氧樹脂與作為固化劑的酚醛樹脂的反應性好,並且耐熱性等優良。
所述酚醛樹脂作為所述環氧樹脂的固化劑起作用,可以列舉例如:苯酚酚醛清漆樹脂、苯酚芳烷基樹脂、甲酚酚醛清漆樹脂、第三丁基苯酚酚醛清漆樹脂、苯酚聯苯樹脂、壬基苯酚酚醛清漆樹脂等酚醛清漆型酚醛樹脂、甲階酚醛樹脂型酚醛樹脂、聚對羥基苯乙烯等聚羥基苯乙烯等。這些酚醛樹脂可以單獨使用或者兩種以上組合使用。這些酚醛樹脂中特別優選苯酚酚醛清漆樹脂、苯酚芳烷基樹脂。這是因為可以提高半導體裝置的連接可靠性。
所述環氧樹脂與酚醛樹脂的調配比例,例如,以相對於所述環氧樹脂成分中的環氧基1當量,酚醛樹脂中的羥基為0.5當量~2.0當量的方式進行調配是適當的。另外,更合適的是0.8當量~1.2當量。即,這是因為:兩者的調配比例在所述範圍以外時,不能進行充分的固化反應,從
而環氧樹脂固化物的特性容易劣化。
作為所述熱塑性樹脂,可以列舉:天然橡膠、丁基橡膠、異戊二烯橡膠、氯丁橡膠、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯樹脂、聚碳酸酯樹脂、熱塑性聚醯亞胺樹脂、尼龍6或尼龍66等聚醯胺樹脂、苯氧基樹脂、丙烯酸類樹脂、PET或PBT等飽和聚酯樹脂、聚醯胺醯亞胺樹脂、或者含氟樹脂等。這些熱塑性樹脂可以單獨使用或者兩種以上組合使用。這些熱塑性樹脂中,特別優選離子性雜質少、耐熱性高、能夠確保半導體元件的可靠性的丙烯酸類樹脂。
作為所述丙烯酸類樹脂,沒有特別限制,可以列舉:以一種或兩種以上具有碳原子數30以下、特別是碳原子數4~18的直鏈或支鏈烷基的丙烯酸酯或甲基丙烯酸酯為成分的聚合物(丙烯酸類聚合物)等。作為所述烷基,可以列舉例如:甲基、乙基、丙基、異丙基、正丁基、第三丁基、異丁基、戊基、異戊基、己基、庚基、環己基、2-乙基己基、辛基、異辛基、壬基、異壬基、癸基、異癸基、十一烷基、月桂基、十三烷基、十四烷基、硬脂基、十八烷基或者二十烷基等。
另外,作為用於形成所述聚合物的其它單體,沒有特別限制,可以列舉例如:含縮水甘油基單體如丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯等;含羧基單體如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、馬來酸、富馬酸或巴豆酸等;酸酐單體如馬來酸酐或衣康酸
酐等;含羥基單體如(甲基)丙烯酸-2-羥基乙酯、(甲基)丙烯酸-2-羥基丙酯、(甲基)丙烯酸-4-羥基丁酯、(甲基)丙烯酸-6-羥基己酯、(甲基)丙烯酸-8-羥基辛酯、(甲基)丙烯酸-10-羥基癸酯、(甲基)丙烯酸-12-羥基月桂酯或丙烯酸(4-羥甲基環己基)甲酯等;含磺酸基單體如苯乙烯磺酸、烯丙磺酸、2-(甲基)丙烯醯胺基-2-甲基丙磺酸、(甲基)丙烯醯胺基丙磺酸、(甲基)丙烯酸磺丙酯或(甲基)丙烯醯氧基萘磺酸等;含磷酸基單體如丙烯醯磷酸-2-羥基乙酯;苯乙烯單體;或者丙烯腈。
另外,晶片接合薄膜3中,根據其用途可以適當調配填料。填料的調配可以賦予導電性或提高導熱性、調節彈性模量等。作為所述填料,可以列舉無機填料和有機填料,從提高操作性、提高熱電導性、調節熔融黏度、賦予觸變性等特性的觀點考慮,優選無機填料。作為所述無機填料,沒有特別限制,可以列舉例如:氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁鬚晶、氮化硼、結晶二氧化矽、非晶二氧化矽等。這些填料可以單獨使用或者兩種以上組合使用。從提高熱電導性的觀點考慮,優選氧化鋁、氮化鋁、氮化硼、結晶二氧化矽、非晶二氧化矽。另外,從上述各特性平衡良好的觀點考慮,優選結晶二氧化矽或非晶二氧化矽。另外,為了賦予導電性、提高熱電導性等,也可以使用導電性物質(導電填料)作為無機填料。作為導電填料,可以列舉將銀、鋁、金、銅、鎳、導電性合金等形成
為球形、針狀、薄片狀而得到的金屬粉、氧化鋁等金屬氧化物、非晶質碳黑、石墨等。所述填料的平均粒徑可以為0.1μm~80μm。另外,所述填料的平均粒徑例如為通過光度式粒度分佈計(HORIBA製造,裝置名:LA-910)求出的值。
所述填料的調配量,當將熱塑性成分的重量設為X、將熱固性成分的重量設為Y、將填料的重量設為Z時,Z/(X+Y+Z)優選為0.05以上且0.7以下,更優選0.05以上且0.5以下,進一步優選0.05以上且0.3以下。通過將所述Z/(X+Y+Z)調節為0.05以上且0.7以下,可以控制晶片接合薄膜的光線透射率。
另外,晶片接合薄膜3中,除了所述填料以外,根據需要還可以適當調配其它添加劑。作為其它添加劑,可以列舉例如:阻燃劑、矽烷偶合劑或離子捕獲劑等。作為所述阻燃劑,可以列舉例如:三氧化二銻、五氧化二銻、溴化環氧樹脂等。這些阻燃劑可以單獨使用或者兩種以上組合使用。作為所述矽烷偶合劑,可以列舉例如:β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷等。這些化合物可以單獨使用或者兩種以上組合使用。作為所述離子捕獲劑,可以列舉例如:水滑石類、氫氧化鉍等。這些離子捕獲劑可以單獨使用或者兩種以上組合使用。
晶片接合薄膜3的厚度(積層體的情況下為總厚度)沒有特別限制,例如,可以從1μm~200μm的範圍內選擇,優選5μm~100μm,更優選10μm~80μm。
如上所述,將切割薄膜11與保護薄膜14的積層部分對波長400nm~800nm的光線透射率設為T1、將切割薄膜11與晶片接合薄膜3和保護薄膜14的積層部分對波長400nm~800nm的光線透射率設為T2時,以上述式(A)所表示的T為4以上。
為了使所述T為4以上,晶片接合薄膜3的光線透射率優選為0.1%~95%,更優選0.1%~70%,進一步優選0.1%~50%。晶片接合薄膜3的光線透射率可以通過環氧樹脂、酚醛樹脂、填料的含量進行控制。
保護薄膜14具有在供給實際應用之前作為保護晶片接合薄膜3的保護材料的功能等。另外,保護薄膜14也可以作為將晶片接合薄膜3向黏著劑層2轉印時的支撐基材使用。保護薄膜14在向晶片接合薄膜3上黏貼工件時剝離。作為保護薄膜14的材質,可以列舉聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用含氟型剝離劑、長鏈烷基丙烯酸酯型剝離劑等剝離劑進行表面塗布後的塑料薄膜或紙等。
以下,對本實施方式的半導體裝置用薄膜10的製造方法進行說明。圖3(a)和圖3(b)是用於說明半導體裝置用薄膜10的製造方法的示意剖視圖。首先,基材1可以通過現有公知的製膜方法製膜。作為該製膜方法,可以例示例如:壓延製膜法、有機溶劑中的流延法、密閉體系中的吹塑擠出法、T形模頭擠出法、共擠出法、乾式層壓法等。
接著,在基材1上塗布黏著劑組合物溶液形成塗膜,
然後在規定條件下將該塗膜乾燥(根據需要進行加熱交聯)而形成黏著劑層2。作為塗布方法,沒有特別限制可以列舉例如:輥塗、網版塗布、凹版塗布等。另外,作為乾燥條件,可以在例如:在乾燥溫度80℃~150℃、乾燥時間0.5分鍾~5分鍾的範圍內進行。另外,也可以在隔片上塗布黏著劑組合物形成塗膜後在所述乾燥條件下將塗膜乾燥來形成黏著劑層2。然後,將黏著劑層2與隔片一起黏貼到基材1上。由此,製作切割薄膜11。
晶片接合薄膜3的製作製程如下所述進行。即,在基材隔片上以達到規定厚度的方式塗布用於形成晶片接合薄膜3的接著劑組合物溶液而形成塗膜。該接著劑組合物溶液中,如前所述,調配有所述接著劑組合物、填料、其它各種添加劑等。然後,在規定條件下將塗膜乾燥,形成晶片接合薄膜3。作為塗布方法沒有特別限制,可以列舉例如:輥塗、網版塗布、凹版塗布等。另外,作為乾燥條件,可以根據塗膜的厚度、材料等適當設定。具體而言,例如在乾燥溫度70℃~160℃、乾燥時間分鐘1~5分鐘的範圍內進行。
然後,將晶片接合薄膜3按照將要黏貼的半導體晶圓的形狀進行沖裁,並以規定的間隔黏貼到切割薄膜11上,並且以晶片接合薄膜3為黏貼面黏貼保護薄膜14。由此,成為在一個連續的切割薄膜11與一個連續的保護薄膜14之間以規定的間隔黏貼有多個晶片接合薄膜3的狀態。另外,圖3(a)中將其一部分擴大表示。
切割薄膜11與晶片接合薄膜3的黏貼例如通過壓接進行。此時,層壓溫度沒有特別限制,通常優選30℃~80℃,更優選30℃~60℃,特別優選30℃~50℃。另外,線壓沒有特別限制,通常優選0.1kgf/cm~20kgf/cm,更優選1kgf/cm~10kgf/cm。
另外,保護薄膜14的所述黏貼,優選通過壓接進行。此時,層壓溫度沒有特別限制,通常優選20℃~80℃,更優選20℃~60℃,特別優選20℃~50℃。另外,線壓也沒有特別限制,通常優選0.1kgf/cm~20kgf/cm,更優選0.2kgf/cm~10kgf/cm。
另外,作為所述隔片沒有特別限制,可以使用現有公知的經脫模處理後的薄膜。作為構成經脫模處理後的薄膜的材料,沒有特別限制,可以採用現有公知的材料。具體而言,可以列舉例如:聚對苯二甲酸乙二醇酯(PET)、聚乙烯、聚丙烯、或利用含氟型剝離劑、長鏈烷基丙烯酸酯型剝離劑等剝離劑進行表面塗布後的塑料薄膜或紙等。
然後,預切割前的半導體裝置用薄膜15沿一定方向(圖3(a)中為左向)繞出,並將薄膜檢測用光L照射到預切割前的半導體裝置用薄膜15上。圖3(a)中,光L透過切割薄膜11與保護薄膜14的積層部分,透射的光L通過未圖示的感測器檢測,計算光線透射率。此時的光線透射率為光線透射率T1。
然後,將預切割前的半導體裝置用薄膜15進一步繞出時,如圖3(b)所示,光L透過切割薄膜11與晶片接合
薄膜3以及保護薄膜14的積層部分。透射的光L通過未圖示的感測器檢測,計算光線透射率。此時的光線透射率為光線透射率T2。
薄膜檢測用光優選波長400nm~800nm,更優選波長450nm~750nm,進一步優選波長500nm~700nm。
對於感測器而言,在光線透射率以一定水平以上變化時、即光線透射率從T1變化為光線透射率T2從而以所述式(A)所表示的T為4以上時,將該部位作為晶片接合薄膜3的一端而檢測到。由此,檢測到晶片接合薄膜3的位置。而且,基於所檢測到的晶片接合薄膜3的位置,以晶片接合薄膜3位於切割薄膜11的中心的方式進行沖裁。另外,被沖裁的切割薄膜11的直徑大於晶片接合薄膜3的直徑。由此,可以製造半導體裝置用薄膜10。
(半導體裝置的製造方法)
以下,以使用半導體裝置用薄膜10的情況為例對半導體裝置的製造方法進行說明。圖4是表示通過圖1(a)、圖1(b)所示的半導體裝置薄膜中的接著劑層安裝半導體晶圓的例子的示意剖視圖。
首先,從保護薄膜14上將帶有晶片接合薄膜3的切割薄膜11剝離並壓接半導體晶圓4(黏貼製程)。本製程利用壓接輥等擠壓手段擠壓來進行。安裝時的黏貼溫度沒有特別限制,優選例如在20℃~80℃的範圍內。
然後,進行半導體晶圓4的切割。由此,將半導體晶圓4切割為規定尺寸而小片化,製作半導體晶片5。切割
例如按照常規方法從半導體晶圓4的電路面一側進行。另外,本製程中,例如,可以採用切入到晶片接合薄膜3的、稱為全切割的切割方式等。本製程中使用的切割裝置沒有特別限制,可以採用現有公知的切割裝置。另外,半導體晶圓4由帶有晶片接合薄膜3的切割薄膜11接著固定,因此可以抑制晶片缺損或晶片飛散,並且可以抑制半導體晶圓4的破損。
為了剝離由帶有晶片接合薄膜3的切割薄膜11接著固定的半導體晶片5,進行半導體晶片5的拾取。拾取方法沒有特別限制,可以採用現有公知的各種方法。可以列舉例如:用針將各個半導體晶片5從切割薄膜11一側上推,並利用拾取裝置拾取經上推的半導體晶片5的方法等。
在此,黏著劑層2為紫外線固化型的情況時,在對該黏著劑層2照射紫外線後進行拾取。由此,黏著劑層2對晶片接合薄膜3的黏著力下降,使半導體晶片5容易剝離。結果,可以在不損傷半導體晶片5的情況下進行拾取。紫外線照射時的照射強度、照射時間等條件沒有特別限制,可以根據需要適當設定。另外,作為紫外線照射時使用的光源,可以使用所述的光源。
經拾取的半導體晶片5介隔晶片接合薄膜3接著固定到被黏物6上(晶片接合)。作為被黏物6,可以列舉引線框、TAB薄膜、基板或者另外製作而成的半導體晶圓等。被黏物6例如可以是容易變形的變形型被黏物,也可以是難以變形的非變形型被黏物(半導體晶圓等)。
作為所述基板,可以使用現有公知的基板。另外,所述引線框可以使用Cu引線框、42合金引線框等金屬引線框或包含玻璃環氧、BT(雙馬來醯亞胺-三嗪)、聚醯亞胺等的有機基板。但是,本發明不限於此,也包含安裝半導體元件並與半導體元件電性連接後可以使用的電路基板。
晶片接合薄膜3為熱固化型時,通過加熱固化,將半導體晶片5接著固定在被黏物6上,使耐熱強度提高。可以在加熱溫度為80℃~200℃、優選100℃~175℃、更優選100℃~140℃下進行。另外,可以在加熱時間為0.1小時~24小時、優選0.1小時~3小時、更優選0.2小時~1小時下進行。另外,介隔晶片接合薄膜3將半導體晶片5接著固定到基板等上而得到的材料可以供給回流焊接製程。
熱固化後的晶片接合薄膜3對被黏物6的剪切接著力優選為0.2MPa以上,更優選0.2MPa~10MPa。晶片接合薄膜3的剪切接著力為至少0.2MPa以上時,在絲焊製程時,不會因該製程中的超聲波振動或加熱而在晶片接合薄膜3與半導體晶片5或被黏物6的接著面上產生剪切變形。即,半導體元件不會因絲焊時的超聲波振動而活動,由此,可以防止絲焊的成功率下降。
另外,本實施方式的半導體裝置的製造方法,可以在不經過晶片接合薄膜3的利用加熱處理進行的熱固化製程的情況下進行絲焊,再用密封樹脂將半導體晶片5密封,並將該密封樹脂後固化。此時,晶片接合薄膜的暫時固著時對被黏物6的剪切接著力優選為0.2MPa以上,更優選
0.2MPa~10MPa。晶片接合薄膜3暫時固著時的剪切接著力為至少0.2MPa以上時,即使在不經過加熱製程的情況下進行絲焊製程,也不會因該製程中的超聲波振動或加熱而在晶片接合薄膜3與半導體晶片5或被黏物6的接著面上產生剪切變形。即,半導體元件不會因絲焊時的超聲波振動而移動,由此,可以防止絲焊的成功率下降。
所述絲焊是利用焊線7將被黏物6的端子部(內部引線)的末端與半導體晶片5上的電極焊盤(未圖示)電性連接的製程。作為所述焊線7,可以使用例如:金線、鋁線或銅線等。進行絲焊時的溫度在80℃~250℃、優選80℃~220℃的範圍內進行。另外,其加熱時間進行幾秒~幾分鐘。線路連接是在所述溫度範圍內加熱的狀態下,通過組合使用超聲波振動能和施加的壓力而產生的壓接能來進行。本製程可以在不進行晶片接合薄膜3的熱固化的情況下進行。
所述密封製程是利用密封樹脂8將半導體晶片5密封的製程。本製程是為了保護搭載在被黏物6上的半導體晶片5或焊線7而進行的。本製程通過用模具將密封用的樹脂成型來進行。作為密封樹脂8,例如可以使用環氧類樹脂。樹脂密封時的加熱溫度通常在175℃下進行60秒~90秒,但是,本發明不限於此,例如,也可以在165℃~185℃下固化幾分鐘。由此,在使密封樹脂固化的同時通過晶片接合薄膜3將半導體晶片5與被黏物6固著。即,本發明中,即使在不進行後述的後固化製程的情況下,本製程
中也可以利用晶片接合薄膜3進行固著,從而可以有助於減少製造製程數及縮短半導體裝置的製造時間。
所述後固化製程中,使在所述密封製程中固化不足的密封樹脂8完全固化。即使在密封製程中晶片接合薄膜3未完全熱固化的情況下,在本製程中也可以與密封樹脂8一起實現晶片接合薄膜3的完全熱固化。本製程中的加熱溫度因密封樹脂的種類而異,例如,在165℃~185℃的範圍內,加熱時間為約0.5小時~約8小時。
實施例
以下,例示性地詳細說明本發明的優選實施例。但是,該實施例中記載的材料、調配量等如果不是特別限定的記載,則本發明的要旨不僅僅限於此。另外,以下提到“份”時是指“重量份”。
<晶片接合薄膜的製作>
(製造例1)
將環氧樹脂(JER股份有限公司製造,EPIKOT 1004)12份、酚醛樹脂(三井化學股份有限公司製造,MIREX XLC-4L)13份、以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造,SG-708-6)100份、作為填料的球形二氧化矽(admatechs股份有限公司製造,SO-25R)30份溶解於甲基乙基酮中,得到濃度23.6重量%的接著劑組合物溶液。
將該接著劑組合物溶液塗布到矽酮脫模處理後的厚度50μm的包含聚對苯二甲酸乙二醇酯薄膜的脫模處理薄
膜(剝離襯墊)上,然後在130℃乾燥2分鐘。由此,製作厚度20μm的晶片接合薄膜A。
(製造例2)
將環氧樹脂(JER股份有限公司製造,EPIKOT 1004)48份、酚醛樹脂(三井化學股份有限公司製造,MIREX XLC-4L)51份、以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造,SG-708-6)100份、作為填料的球形二氧化矽(admatechs股份有限公司製造,SO-25R)74份溶解於甲基乙基酮中,得到濃度23.6重量%的接著劑組合物溶液。
將該接著劑組合物溶液塗布到矽酮脫模處理後的厚度50μm的包含聚對苯二甲酸乙二醇酯薄膜的脫模處理薄膜(剝離襯墊)上,然後在130℃乾燥2分鐘。由此,製作厚度20μm的晶片接合薄膜B。
(製造例3)
將環氧樹脂(JER股份有限公司製造,EPIKOT 1004)193份、酚醛樹脂(三井化學股份有限公司製造,MIREX XLC-4L)207份、以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造,SG-708-6)100份、作為填料的球形二氧化矽(admatechs股份有限公司製造,SO-25R)195份溶解於甲基乙基酮中,得到濃度23.6重量%的接著劑組合物溶液。
將該接著劑組合物溶液塗布到矽酮脫模處理後的厚度50μm的包含聚對苯二甲酸乙二醇酯薄膜的脫模處理薄
膜(剝離襯墊)上,然後在130℃乾燥2分鐘。由此,製作厚度20μm的晶片接合薄膜C。
(製造例4)
將環氧樹脂(JER股份有限公司製造,EPIKOT 1004)2份、酚醛樹脂(三井化學股份有限公司製造,MIREX XLC-4L)2份、以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造,SG-708-6)100份、作為填料的球形二氧化矽(admatechs股份有限公司製造,SO-25R)10份溶解於甲基乙基酮中,得到濃度23.6重量%的接著劑組合物溶液。
將該接著劑組合物溶液塗布到矽酮脫模處理後的厚度50μm的包含聚對苯二甲酸乙二醇酯薄膜的脫模處理薄膜(剝離襯墊)上,然後在130℃乾燥2分鐘。由此,製作厚度20μm的晶片接合薄膜D。
(製造例5)
將環氧樹脂(JER股份有限公司製造,EPIKOT 1004)4份、酚醛樹脂(三井化學股份有限公司製造,MIREX XLC-4L)4份、以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造,SG-708-6)100份、作為填料的球形二氧化矽(admatechs股份有限公司製,SO-25R)16份溶解於甲基乙基酮中,得到濃度23.6重量%的接著劑組合物溶液。
將該接著劑組合物溶液塗布到矽酮脫模處理後的厚度50μm的包含聚對苯二甲酸乙二醇酯薄膜的脫模處理薄
膜(剝離襯墊)上,然後在130℃乾燥2分鐘。由此,製作厚度20μm的晶片接合薄膜E。
(製造例6)
將環氧樹脂(JER股份有限公司製造,EPIKOT 1004)7份、酚醛樹脂(三井化學股份有限公司製造,MIREX XLC-4L)7份、以丙烯酸乙酯-甲基丙烯酸甲酯為主成分的丙烯酸酯類聚合物(Nagase chemteX股份有限公司製造,SG-708-6)100份、作為填料的球形二氧化矽(admatechs股份有限公司製造,SO-25R)23份溶解於甲基乙基酮中,得到濃度23.6重量%的接著劑組合物溶液。
將該接著劑組合物溶液塗布到矽酮脫模處理後的厚度50μm的包含聚對苯二甲酸乙二醇酯薄膜的脫模處理薄膜(剝離襯墊)上,然後在130℃乾燥2分鐘。由此,製作厚度20μm的晶片接合薄膜F。
(晶片接合薄膜的光線透射率的測定)
測定由製造例1~6製作而成的晶片接合薄膜A~F的光線透射率。測定方法與下述的(光線透射率T1以及光線透射率T2的測定)相同。結果如表1所示。
<切割薄膜的製作>
(製造例7)
在具有冷凝管、氮氣引入管、溫度計和攪拌裝置的反
應容器中,加入丙烯酸-2-乙基己酯(以下也稱為“2EHA”)86重量份、丙烯酸-2-羥基乙酯(以下也稱為“HEA”)14重量份、過氧化苯甲醯0.2重量份以及甲苯65重量份,在氮氣流中在61℃進行6小時的聚合處理,得到重量平均分子量35萬~100萬的丙烯酸類聚合物。在該丙烯酸類聚合物中加入2-甲基丙烯醯氧乙基異氰酸酯(以下也稱為“MOI”)15重量份,在空氣氣流中在50℃進行48小時加成反應處理,得到丙烯酸類聚合物X。
然後,相對於100重量份丙烯酸類聚合物X,加入異氰酸酯類交聯劑(CORONATE L,日本聚胺酯工業股份有限公司製造)8份、以及光聚合起始劑(IRGACURE 651,汽巴精化股份有限公司製造)5份到作為溶劑的甲苯10重量份中,製作黏著劑溶液。將前面製備的黏著劑溶液塗布到PET剝離襯墊的經矽酮處理後的面上,在120℃加熱交聯2分鐘,形成厚度10μm的黏著劑層前驅體。然後,在該黏著劑前驅體表面黏貼厚度100μm的聚烯烴薄膜。然後,在50℃保存24小時。由此,製作切割薄膜A。
<保護薄膜的準備>
作為保護薄膜,準備38μm的聚對苯二甲酸乙二醇酯薄膜(三菱樹脂股份有限公司製造,DIAFOIL MRA)(以下也稱為保護薄膜A)。
<半導體裝置用薄膜的製作>
(實施例1)
使用切割薄膜A、晶片接合薄膜A、保護薄膜A,製
作半導體裝置用薄膜。半導體裝置用薄膜的製作中,使用預切割裝置(solutech工業股份有限公司製造,SRD im-W500),並設定為10m/分鐘。另外,感測器將KEYENCE股份有限公司製造的CZ-40設定為C+I模式後使用。將此作為實施例1的半導體裝置用薄膜。
(實施例2)
除了使用切割薄膜A、晶片接合薄膜B和保護薄膜A以外,與實施例1同樣操作,製作實施例2的半導體裝置用薄膜。
(實施例3)
除了使用切割薄膜A、晶片接合薄膜C和保護薄膜A以外,與實施例1同樣操作,製作實施例3的半導體裝置用薄膜。
(比較例1)
除了使用切割薄膜A、晶片接合薄膜D和保護薄膜A以外,與實施例1同樣操作,製作比較例1的半導體裝置用薄膜。
(比較例2)
除了使用切割薄膜A、晶片接合薄膜E和保護薄膜A以外,與實施例1同樣操作,製作比較例2的半導體裝置用薄膜。
(比較例3)
除了使用切割薄膜A、晶片接合薄膜F和保護薄膜A以外,與實施例1同樣操作,製作比較例3的半導體裝置
用薄膜。
(光線透射率T1和光線透射率T2的測定)
在切割薄膜與保護薄膜的積層部分的光線透射率T1以及切割薄膜和晶片接合薄膜和保護薄膜的積層部分的光線透射率T2的測定中,使用日本分光公司製造的分光光度計(製品名“V-670”),將測定模式設定為%T(透射率測定)、測定波長區域設定為190nm~800nm來進行。將此時的波長650nm下的透射率作為測定值。結果如表2所示。另外,表2中也一併示出了由所述式(A)表示的T。
(成品率的確認)
使用實施例以及比較例的半導體裝置用薄膜,進行以下的成品率確認試驗。
首先,將帶有晶片接合薄膜的切割薄膜從保護薄膜上剝離。然後,在帶有晶片接合薄膜的切割薄膜的晶片接合薄膜上,壓接半導體晶圓。然後,黏貼切割環。所述試驗使用日東精機股份有限公司製造的MA-3000(III)進行,條件為10mm/秒、50℃。所述試驗對100片帶有晶片接合薄膜的切割薄膜進行,並對在切割環上附著有晶片接合薄膜從而切割環受到污染的片數進行計數。結果如表2所示。另外,在表2中一併示出了切割環未受到晶片接合薄膜污染的比率(成品率(%))。另外,將未確認到切割環的污染的情況評價為○、將確認到即使一片切割環的污染的情況評價為×。評價結果也一併示於表2中。另外,切割環未被污染是指半導體晶圓與晶片接合薄膜在沒有位置偏移的情況
下黏貼的情況。
(結果)
只要製造出光線透射率T1與T2的差別大、所述T值為4以上的實施例1~3的半導體裝置用薄膜,並且使用這些半導體裝置用薄膜,則在將半導體晶圓黏貼到晶片接合薄膜上時,可以抑制切割環受到污染。
1‧‧‧基材
2‧‧‧黏著劑層
2a、2b、16‧‧‧部分
3‧‧‧晶片接合薄膜
4‧‧‧半導體晶圓
5‧‧‧半導體晶片
6‧‧‧被黏物
7‧‧‧焊線
8‧‧‧密封樹脂
10‧‧‧半導體裝置用薄膜
11‧‧‧切割薄膜
14‧‧‧保護薄膜
15‧‧‧預切割前的半導體裝置用薄膜
L‧‧‧薄膜檢測用光
T1、T2‧‧‧透射率
圖1(a)是表示本發明的一個實施方式的半導體裝置用薄膜的示意剖視圖,圖1(b)為其俯視圖。
圖2是表示圖1(a)和圖1(b)所示的半導體裝置用薄膜的一部分的示意剖視圖。
圖3(a)、圖3(b)是用於說明圖1(a)、圖1(b)所示的半導體裝置用薄膜的製造方法的示意剖視圖。
圖4是表示使用圖1(a)、圖1(b)所示的半導體裝置用薄膜製造的半導體裝置的一例的示意剖視圖。
1‧‧‧基材
2‧‧‧黏著劑層
3‧‧‧晶片接合薄膜
10‧‧‧半導體裝置用薄膜
11‧‧‧切割薄膜
14‧‧‧保護薄膜
16‧‧‧部分
L‧‧‧薄膜檢測用光
T1、T2‧‧‧透射率
Claims (3)
- 一種半導體裝置用薄膜的製造方法,所述半導體裝置用薄膜是切割薄膜、晶片接合薄膜和保護薄膜以該順序積層而成,其特徵在於,所述晶片接合薄膜中調配有填料,當將構成所述晶片接合薄膜的熱塑性成分的重量設為X、熱固性成分的重量設為Y、填料的重量設為Z時,所述填料的調配量Z/(X+Y+Z)為0.05以上且0.7以下,將所述切割薄膜和所述保護薄膜的積層部分對波長400nm~800nm的光線透射率設為T1、將所述切割薄膜與所述晶片接合薄膜和所述保護薄膜的積層部分對波長400nm~800nm的光線透射率設為T2時,以下式(A)所表示的T為4以上,T=100-((T2/T1)×100) (A)所述半導體裝置用薄膜的製造方法包括:製作所述切割薄膜的製程;製作所述晶片接合薄膜的製程;按照將要黏貼的半導體晶圓的形狀對所述晶片接合薄膜進行沖裁的製程;在所述切割薄膜上以規定的間隔黏貼多個所述晶片接合薄膜,並且將所述晶片接合薄膜側作為黏貼面而黏貼所述保護薄膜的製程;照射波長400nm~800nm的光線,基於所得到的光線透射率檢測所述晶片接合薄膜的位置的製程;以及 基於檢測到的所述晶片接合薄膜的位置,對所述切割薄膜進行沖裁的製程。
- 如申請專利範圍第1項所述的半導體裝置用薄膜的製造方法,其中,所述光線透射率T1為2%~80%。
- 如申請專利範圍第1項或第2項所述的半導體裝置用薄膜的製造方法,其中,所述光線透射率T2為0.1%~70%。
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