CN102347263B - 半导体背面用切割带集成膜和生产半导体器件的方法 - Google Patents
半导体背面用切割带集成膜和生产半导体器件的方法 Download PDFInfo
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- CN102347263B CN102347263B CN201110184662.5A CN201110184662A CN102347263B CN 102347263 B CN102347263 B CN 102347263B CN 201110184662 A CN201110184662 A CN 201110184662A CN 102347263 B CN102347263 B CN 102347263B
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Classifications
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H01L23/3164—Partial encapsulation or coating the coating being a foil
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- H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
- H01L24/92—Specific sequence of method steps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H01L2221/68386—Separation by peeling
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54433—Marks applied to semiconductor devices or parts containing identification or tracking information
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
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- H—ELECTRICITY
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- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13144—Gold [Au] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本发明涉及半导体背面用切割带集成膜和生产半导体器件的方法。本发明涉及半导体背面用切割带集成膜,其包括含有依次层压的基材和压敏粘合剂层的切割带,和设置于切割带的压敏粘合剂层上的半导体背面用膜,其中压敏粘合剂层具有20μm至40μm的厚度。
Description
技术领域
本发明涉及半导体背面用切割带集成膜和生产半导体器件的方法。半导体背面用膜用于保护半导体元件如半导体芯片的背面并用于提高其强度。
背景技术
近年来,日益要求半导体器件及其封装的薄型化和小型化。因此,作为半导体器件及其封装,已经广泛地利用其中通过倒装芯片接合将半导体元件如半导体芯片安装(倒装芯片连接)至基板上的倒装芯片型半导体器件。在此类倒装芯片连接中,将半导体芯片以其中半导体芯片的电路面与基板的电极形成面相对的形式固定至基板。在这类半导体器件等中,可能存在其中半导体芯片的背面用保护膜保护以防止半导体芯片损坏等的情况(参见专利文献1至3)。
专利文献1:JP-A-2008-166451
专利文献2:JP-A-2008-006386
专利文献3:JP-A-2007-261035
然而,为了通过保护膜保护半导体芯片的背面,有必要增加用于将保护膜粘贴至切割步骤中得到的半导体芯片的背面的新步骤。结果,步骤数量增加并且生产成本等增加。因此,为了降低生产成本,本发明人开发了半导体背面用切割带集成膜,并对其提出了申请(在本申请提交时还未公开)。半导体背面用切割带集成膜具有包含具有基材和在基材上的压敏粘合剂层的切割带,和形成于切割带的压敏粘合剂层上的倒装芯片型半导体背面用膜的结构。
在生产半导体器件时,半导体背面用切割带集成膜的使用如下。首先,将半导体晶片粘贴到半导体背面用切割带集成膜中的倒装芯片型半导体背面用膜上。然后,切割半导体晶片以形成半导体元件。随后,将半导体元件从切割带的压敏粘合剂层剥离,并与倒装芯片型半导体背面用膜一起拾取,然后将半导体元件倒装芯片连接到被粘物如基板上。因此,得到倒装芯片型半导体器件。
对于半导体晶片切割,广泛采用的是所谓的完全切断法,其将切割至到达半导体背面用膜上的切割带的基材层深度作为切割刀切割深度。此前,考虑到压敏粘合剂层的厚度为约10μm并考虑到切割机的精度,更多采用的是通过在完全切断操作中切割至压敏粘合剂层上的基材以留出制造边缘(productionmargin)来避免切割步骤中的不足的方法。因此,随后的拾取过程能够将半导体芯片与半导体背面用膜一体化剥离,而无需任何切断半导体背面用膜的另外步骤或操作。
然而,切割至基材产生来自基材的切割粉尘,并且切割粉尘粘合至切割的半导体芯片的侧面,并可能在芯片周围形成所谓毛刺(burr)的沉积物。当具有该毛刺的半导体芯片安装在半导体器件内时,其可能引起与被粘物的互连不良(interconnectionfailure)和基板电路的污染(其可能导致半导体器件可靠性的降低)。
发明内容
考虑到上述问题进行了本发明,并且其目的是提供半导体背面用切割带集成膜和生产半导体器件的方法,所述半导体背面用切割带集成膜能够显示良好的切割性能并能够防止将要通过切割半导体晶片生产的半导体芯片周围的毛刺的产生,从而使其可以生产具有改善的产品收率的高可靠性的半导体器件。
为了解决现存问题,本发明人进行了锐意研究,结果,发现通过采用以下构造,可以提供具有良好切割性能并能够防止半导体芯片周围毛刺产生的半导体背面用切割带集成膜,并完成了本发明。
即,本发明涉及半导体背面用切割带集成膜(下文可称作“集成膜”),其包括:含有依次层压的基材和压敏粘合剂层的切割带,和设置于切割带的压敏粘合剂层上的半导体背面用膜,其中压敏粘合剂层具有20μm至40μm的厚度。
虽然在此之前通过在切割中的切割至基材已确保了制造边缘,但是集成膜包括具有20μm至40μm厚度的压敏粘合剂层,因而通过在切割中切割至压敏粘合剂层可以充分确保制造边缘。因此,可以防止通过切割至到达基材将要产生的切割粉尘。结果,该膜能够有助于通过防止半导体芯片周围毛刺的产生同时保持其良好切割性来生产具有高可靠性的半导体器件。当压敏粘合剂层的厚度小于20μm时,则压敏粘合剂层的制造边缘将不足,膜的切割可能到达基材从而不可避免地产生来自基材的切割粉尘,因此导致半导体芯片周围毛刺的产生。另一方面,当压敏粘合剂层的厚度大于40μm时,则压敏粘合剂层的柔性和粘性可能过高,因此其保持和固定半导体晶片的能力可能降低,从而可能使半导体芯片在切割过程中破坏或裂纹,并且一旦切割,半导体芯片可能粘连在一起。
当将压敏粘合剂层的厚度取作x并将半导体背面用膜的厚度取作y时,优选比率x/y为1至4。当比率x/y为1至4时,则压敏粘合剂层的粘合力可能容易调节在适当范围之内并且可以确保压敏粘合剂层良好的剥离强度为这样的程度,即在压敏粘合剂层和半导体背面用膜之间,切割中的保持力和拾取中的剥离容易性可以良好的平衡的程度。
当将切割带的厚度取作z并将半导体背面用膜的厚度取作y时,优选比率z/y为1.5至25。当比率z/y为1.5至25时,则可以防止半导体背面用膜如此薄以致损害其拾取性,另一方面,可以防止半导体背面用膜如此厚以致切割中在半导体芯片周围产生来自半导体背面用膜的毛剌。
本发明还提供利用上述半导体背面用切割带集成膜生产半导体器件的方法,该方法包括:将半导体晶片粘贴到半导体背面用切割带集成膜的半导体背面用膜上,切割半导体晶片以形成半导体芯片,其中将切割深度控制为落入超出面向半导体背面用膜的压敏粘合剂层的一侧至未到达面向基材的压敏粘合剂层的另一侧的范围内,将半导体芯片与半导体背面用膜一起从切割带的压敏粘合剂层剥离,和将半导体芯片倒装芯片连接至被粘物上。
生产方法中,使用其中压敏粘合剂层的厚度为20μm至40μm的集成膜,将用切割刀的切割深度限定至落入切割步骤中预定的范围内。因此,此前通过切割中切割至到达基材来确保的制造边缘可以通过切割至到达压敏粘合剂层来很好地确保。因此,能够防止由切割至到达基材引起的切割粉尘的产生,结果,在防止半导体芯片周围毛刺的产生和保持处理中的良好切割性的情况下,能够有效地生产高可靠性的半导体器件。
优选地,切割中,将切割深度控制为落入从压敏粘合剂层面向半导体背面用膜侧的面起压敏粘合剂层厚度的10%至70%的范围内。当将切割深度控制为落入上述范围内时,则即使考虑到各种切割机切割深度的精度波动也能防止切割至到达基材,因此在防止深度切割至到达基材的情况下,本发明的生产方法可能容易地接受生产线中的各种变化。另外,本发明的生产方法可以很好地确保切割中的制造边缘,并因此可以防止各种不足如切割不良等的产生。
附图说明
图1是示出本发明的半导体背面用切割带集成膜的一个实施方案的横截面示意图。
图2A至2D是示出使用本发明的半导体背面用切割带集成膜生产半导体器件的方法的一个实施方案的横截面示意图。
附图标记说明
1半导体背面用切割带集成膜
2半导体背面用膜
3切割带
31基材
32压敏粘合剂层
33相应于半导体晶片粘贴部分的部分
4半导体晶片
5半导体芯片
51形成于半导体芯片5的电路面侧上的凸块(Bump)
6被粘物
61粘贴至被粘物6的连接垫的连结用导电性材料
具体实施方式
参考图1描述本发明的实施方案,但本发明并不局限于这些实施方案。图1是示出根据本实施方案的半导体背面用切割带集成膜的一个实施方案的横截面示意图,此外,本说明书中的附图中,对于说明不必要的部分没有给出,并且为了易于说明,存在通过放大、缩小等示出的部分。
(半导体背面用切割带集成膜)
如图1所示,半导体背面用切割带集成膜1(以下有时也称为“集成膜”、“切割带集成的半导体背面保护膜”、“具有切割带的半导体背面用膜”或“具有切割带的半导体背面保护膜”)具有包括以下的构造:包括形成于基材31上的压敏粘合剂层32的切割带,和形成于压敏粘合剂层32上的适用于倒装芯片型半导体的半导体背面用膜2。还如图1所示,本发明的半导体背面用切割带集成膜可以设计为将半导体背面用膜2(以下有时称为“半导体背面保护膜”)仅形成于相应于半导体晶片粘贴部分的部分33上;然而,半导体背面用膜可以形成于压敏粘合剂层32的整个表面上,或者半导体背面用膜可以形成于比相应于半导体晶片粘贴部分的部分33大但比压敏粘合剂层32的整个表面小的部分上。此外,半导体背面用膜2的表面(要粘贴到晶片背面的表面)可以用隔离膜等保护直至膜粘贴至晶片背面。
集成膜1中,压敏粘合剂层32的厚度为20μm至40μm。因此,通过切割至到达压敏粘合剂层可以很好地确保切割中的制造边缘。另外,可以防止由切割至到达基材所引起的切割粉尘的产生,结果,该膜可以有助于生产具有高可靠性的半导体器件同时保持其良好的切割性并同时防止半导体芯片周围毛刺的产生。当压敏粘合剂层的厚度小于20μm时,则与压敏粘合剂层的制造边缘将不足,并且可以将膜切割至到达基材,如果这样的话,切割粉尘可能从基材产生,结果,半导体芯片周围可能产生毛刺。另一方面,当压敏粘合剂层的厚度大于40μm时,则压敏粘合剂层的柔性和粘性可能过高,因此其保持和固定半导体晶片的能力可能降低,从而可能使半导体芯片在切割过程中破坏或裂纹,并且一旦切割,半导体芯片可能粘连在一起。
压敏粘合剂层32的厚度在20μm至40μm可能是良好的。压敏粘合剂层厚度的上限优选为38μm,更优选35μm。压敏粘合剂层厚度的下限优选为23μm,更优选25μm。压敏粘合剂层32可以是单层或多层。
没有具体规定,当将压敏粘合剂层32的厚度取作x并将半导体背面用膜2的厚度取作y时,比率x/y优选为1至4,更优选1.1至3.9,更加优选1.2至3.8。当比率x/y落入上述范围内时,则压敏粘合剂层可以给出适当的粘合力,并且压敏粘合剂层和半导体背面用膜之间的剥离强度可以是适当的强度,并可以很好地平衡切割中的保持力和拾取中的剥离容易性。
也没有具体规定,当将切割带3的厚度取作z并将半导体背面用膜2的厚度取作y时,比率z/y优选为1.5至25,更优选1.6至24,更加优选1.7至23。当比率z/y落入上述范围内时,则可以防止半导体背面用膜如此薄以致恶化其拾取性,并且另一方面,可以防止半导体背面用膜如此厚以致切割中在半导体芯片周围产生来自半导体背面用膜的毛刺。
(半导体背面用膜)
半导体背面用膜2具有膜状。在半导体背面用切割带集成膜作为产物的实施方案中,半导体背面用膜2通常处于未固化状态(包括半固化状态),并且在半导体背面用切割带集成膜粘贴至半导体晶片之后热固化。
优选地,半导体背面用膜2至少由热固性树脂形成,更优选至少由热固性树脂和热塑性树脂形成。热固化促进催化剂可包含于构成半导体背面用膜2的树脂中。当半导体背面用膜2至少由热固性树脂形成时,该膜可以有效地显示其粘合功能。
热塑性树脂的实施包括天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、聚酰胺树脂如6-尼龙和6,6-尼龙、苯氧基树脂、丙烯酸类树脂、饱和聚酯树脂如PET(聚对苯二甲酸乙二酯)或PBT(聚对苯二甲酸丁二醇酯)、聚酰胺酰亚胺树脂或氟树脂。热塑性树脂可以单独使用或以两种以上的组合使用。在这些热塑性树脂中,特别优选包含少量离子性杂质、具有高耐热性和能够确保半导体元件可靠性的丙烯酸类树脂。
丙烯酸类树脂没有特别限定,其实例包括含有一种或两种以上具有含有30个以下碳原子、优选4-18个碳原子、更优选6-10个碳原子和特别是8或9个碳原子的直链或支链烷基的丙烯酸或甲基丙烯酸的酯作为一种或多种组分的聚合物。即,在本发明中,丙烯酸类树脂具有还包括甲基丙烯酸类树脂的宽泛含义。所述烷基的实例包括甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂酰基和十八烷基。
此外,形成丙烯酸类树脂的其它单体(除其中烷基为具有30个以下碳原子的烷基的丙烯酸或甲基丙烯酸的烷基酯以外的单体)没有特别限定,其实例包括含羧基的单体如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸和巴豆酸;酸酐单体如马来酸酐和衣康酸酐;含羟基的单体如(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸6-羟己酯、(甲基)丙烯酸8-羟辛酯、(甲基)丙烯酸10-羟癸酯、(甲基)丙烯酸12-羟月桂酯和(4-羟甲基环己基)-甲基丙烯酸酯;含磺酸基的单体如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰氨基-2-甲基丙磺酸、(甲基)丙烯酰氨基丙磺酸、(甲基)丙烯酸磺丙酯和(甲基)丙烯酰氧基萘磺酸;和含磷酸基团的单体如2-羟乙基丙烯酰磷酸酯(2-hydroethylacryloylphosphate)。在这点上,(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸,(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,(甲基)丙烯酰基是指丙烯酰基和/或甲基丙烯酰基,等等,这应用于整个说明书中。
此外,除了环氧树脂和酚醛树脂之外,热固性树脂的实例还包括,氨基树脂、不饱和聚酯树脂、聚氨酯树脂、硅酮树脂和热固性聚酰亚胺树脂。热固性树脂可以单独使用或以其两种以上的组合使用。作为热固性树脂,仅包含少量腐蚀半导体元件的离子性杂质的环氧树脂是合适的。此外,酚醛树脂适合用作环氧树脂的固化剂。
环氧树脂没有特别限定,例如,可使用双官能环氧树脂或多官能环氧树脂如双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、可熔可溶酚醛(phenolnovolak)型环氧树脂、邻甲酚可溶酚醛(o-cresolnovolak)型环氧树脂、三羟基苯甲烷型环氧树脂和四羟苯基乙烷(tetraphenylolethane)型环氧树脂,或环氧树脂如乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油基胺型环氧树脂。
作为环氧树脂,在以上示例的那些中,可溶酚醛型环氧树脂、联苯型环氧树脂、三羟基苯甲烷型环氧树脂和四羟苯基乙烷型环氧树脂是优选的。这是因为这些环氧树脂与作为固化剂的酚醛树脂具有高反应性,且耐热性等优良。
另外,上述酚醛树脂起到环氧树脂的固化剂的作用,其实例包括可溶酚醛型酚醛树脂如可熔可溶酚醛树脂、苯酚芳烷基树脂、甲酚可溶酚醛树脂、叔丁基可熔可溶酚醛树脂和壬基可熔可溶酚醛树脂;甲阶型酚醛树脂;和聚氧苯乙烯(polyoxystyrenes)如聚对氧苯乙烯。酚醛树脂可单独使用或以两种以上的组合使用。在这些酚醛树脂中,可熔可溶酚醛树脂和苯酚芳烷基树脂是特别优选的。这是因为可改进半导体器件的连接可靠性。
环氧树脂与酚醛树脂的混合比优选使得例如酚醛树脂中的羟基变为0.5至2.0当量,基于每当量环氧树脂组分中的环氧基团。其更优选0.8至1.2当量。即,当混合比变为在该范围之外时,固化反应不能充分进行,环氧树脂固化产物的特性趋于劣化。
热固性树脂的含量优选为半导体背面用膜2中所有树脂组分的5重量%至90重量%,更优选10重量%至85重量%,更加优选15重量%至80重量%。当含量5重量%以上时,则可以容易地控制热固化收缩量至2体积%以上。另外,在热固化包封树脂中,半导体背面用膜2可以充分地热固化以便保证粘合并固定到半导体元件的背面,从而给出没有剥离不良的倒装芯片型半导体器件。另一方面,当含量为90重量%以下时,则可以防止包装(package)(PKG,倒装芯片型半导体器件)翘曲。
没有具体规定,用于环氧树脂和酚醛树脂的热固化促进催化剂可以适当选自已知的热固化促进催化剂。一种或多种热固化促进催化剂在此可以单独或组合使用。作为热固化促进催化剂,例如,可使用胺类固化促进催化剂、磷类固化促进催化剂、咪唑类固化促进催化剂、硼类固化促进催化剂或磷-硼类固化促进催化剂。
半导体背面用膜特别适合于由含有环氧树脂和酚醛树脂的树脂组合物或含有环氧树脂、酚醛树脂和丙烯酸类树脂的树脂组合物形成。因为这些树脂仅包含少量离子性杂质并具有高耐热性,所以能够确保半导体元件的可靠性。
重要的是半导体背面用膜2具有对于半导体晶片背面(非电路形成面)的粘合性(紧密粘合性)。半导体背面用膜2可以由,例如,含有环氧树脂作为热固性树脂组分的树脂组合物形成。在半导体背面用膜2预先固化至一定程度的情况中,在其制备时,优选添加能够与在聚合物分子链末端的官能团等反应的多官能化合物作为交联剂。据此,可以提高在高温下的粘合特性并且可以实现膜耐热性的改善。
半导体背面用膜对半导体晶片的粘合力(23℃,剥离角180度,剥离速率300mm/分钟)优选在0.5N/20mm至15N/20mm,更优选0.7N/20mm至10N/20mm的范围内。当粘合力为至少0.5N/20mm时,则膜能够具有优异粘合性的粘合至半导体晶片和半导体元件并免于膜隆起(swelling)等的粘合不良。另外,在半导体晶片切割中,可以防止芯片飞出。另一方面,当粘合力为最大15N/20mm时,则其有利于从切割带剥离。
交联剂不特别限制,可使用已知的交联剂。具体地,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,还提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等。作为交联剂,异氰酸酯类交联剂或环氧类交联剂是合适的。交联剂可单独或以两种以上的组合使用。
异氰酸酯类交联剂的实例包括低级脂肪族多异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族多异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;和芳香族多异氰酸酯例如2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4′-二苯甲烷二异氰酸酯和苯二甲撑二异氰酸酯。此外,也使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加合物[商品名“COLONATEL”,由NipponPolyurethaneIndustryCo.,Ltd.制造]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATEHL”,由NipponPolyurethaneIndustryCo.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N′,N′-四缩水甘油基-间-苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油醚和双酚-S-二缩水甘油醚,以及在分子中具有两个以上环氧基团的环氧类树脂。
交联剂的使用量不特别限制,可依赖于交联程度适当选择。具体地,优选交联剂的使用量为通常7重量份以下(例如,0.05至7重量份),基于100重量份聚合物组分(特别地,在分子链末端具有官能团的聚合物)。当交联剂的量基于100重量份聚合物组分大于7重量份时,粘合力降低,因此这种情况不是优选的,从改善内聚力的角度,交联剂的量优选为0.05重量份以上,基于100重量份聚合物组分。
在本发明中,代替使用交联剂或与使用交联剂一起,也可以通过用电子束或UV光等的照射来进行交联处理。
优选将半导体背面用膜着色。从而,可以显示优异的激光标识性和优异的外观性,并且变得可以使半导体器件具有增值外观性。如上,由于半导体背面用着色膜具有优异的标识性,通过半导体背面用膜借助利用各种标识方法如打印法和激光标识法之一可以进行标识以将各种信息如文字信息和图形信息赋予到半导体元件或使用半导体元件的半导体器件的非电路侧的面。特别地,通过控制着色的颜色,可以优异可视性观察通过标识而赋予的信息(例如,文字信息和图形信息)。另外,当将半导体背面用膜着色时,能够将切割带和半导体背面用膜彼此容易地区分,从而能够提高可加工性等。另外,例如作为半导体器件,可以通过使用不同颜色将其产品分类。在将半导体背面用膜着色的情况下(其中膜即非无色也非透明的情况),通过着色显示的颜色没有特别限定,但优选例如暗色如黑色、蓝色或红色,并且黑色是特别适合的。
本实施方案中,暗色基本上指具有60以下(0至60),优选50以下(0至50),更优选40以下(0至40)的在L*a*b*颜色空间中定义的L*的暗色。
此外,黑色基本上是指具有35以下(0至35),优选30以下(0至30),更优选25以下(0至25)的在L*a*b*颜色空间中定义的L*的黑色系颜色。在这点上,在黑色中,在L*a*b*颜色空间中定义的各a*和b*可根据L*的值适当选择。例如,a*和b*两者均在优选-10至10,更优选-5至5,特别优选-3至3(特别地0或约0)的范围内。
在本实施方案中,在L*a*b*颜色空间中定义的L*、a*和b*可通过用色差计(商品名“CR-200”,由MinoltaLtd制造;色差计)测量来确定。L*a*b*颜色空间为在1976年由CommissionInternationaledel’Eclairage(CIE)建议的颜色空间,并且是指称为CIE1976(L*a*b*)颜色空间的颜色空间。此外,在日本工业标准(JapaneseIndustrialStandards)JISZ8729中定义了L*a*b*颜色空间。
在半导体背面用膜着色时,根据目标颜色,可使用着色剂(着色试剂)。作为该着色剂,可适合使用各种暗色着色剂如黑色着色剂、蓝色着色剂和红色着色剂,黑色着色剂是更适合的。着色剂可为任意颜料和染料。着色剂可单独或以两种以上组合使用。在这点上,作为染料,可以使用任何形式的染料如酸性染料、反应性染料、直接染料、分散染料和阳离子染料。此外,对于颜料同样,其形式不特别限制,可在已知颜料中适当选择和使用。
特别地,当将染料用作着色剂时,通过在半导体背面用膜内的溶解使染料变得处于均匀或几乎均匀分散的状态,从而可以容易地生产具有均匀或几乎均匀的着色浓度的半导体背面用膜(作为结果,半导体背面用切割带集成膜)。因此,当将染料用作着色剂时,半导体背面用切割带集成膜中的半导体背面用膜能够具有均匀或几乎均匀的着色浓度并能够增强标识性和外观性。
黑色着色剂不特别限制,例如,可适当地选自无机黑色颜料和黑色染料。此外,黑色着色剂可为其中将青色着色剂(蓝-绿着色剂)、品红色着色剂(红-紫着色剂)和黄色着色剂(黄着色剂)混合的着色剂混合物。黑色着色剂可单独或以两种以上的组合使用。当然,黑色着色剂可与除黑色之外的其它颜色的着色剂组合使用。
黑色着色剂的具体实例包括炭黑(如炉黑、槽黑、乙炔黑、热裂炭黑或灯黑)、石墨、氧化铜、二氧化锰、偶氮型颜料(例如,偶氮甲碱偶氮黑)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁素体(如非磁性铁素体或磁性铁素体)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬配合物、复合氧化物型黑色颜料和蒽醌型有机黑色颜料。
本发明中,作为黑色着色剂,还可以使用黑色染料如C.I.溶剂蓝3、7、22、27、29、34、43、70,C.I.直接黑17、19、22、32、38、51、71,C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154,和C.I.分散黑1、3、10、24;和黑色颜料如C.I.颜料黑1、7;等。
作为此类黑色着色剂,例如,商品名“OilBlackBY”、商品名“OilBlackBS”、商品名“OilBlackHBB”、商品名“OilBlack803”、商品名“OilBlack860”、商品名“OilBlack5970”、商品名“OilBlack5906”和商品名“OilBlack5905”(由OrientChemicalIndustriesCo.,Ltd.制造)等是商购可得的。
除黑色着色剂以外的着色剂的实例包括青色着色剂、品红色着色剂和黄色着色剂。青色着色剂的实例包括青色染料如C.I.溶剂蓝25、36、60、70、93、95;C.I.酸性蓝6和45;青色颜料如C.I.颜料蓝1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66;C.I.瓮蓝4、60;C.I.颜料绿7。
此外,在品红色着色剂中,品红色染料的实例包括C.I.溶剂红1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散红9;C.I.溶剂紫8、13、14、21、27;C.I.分散紫1;C.I.碱性红1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.碱性紫1、3、7、10、14、15、21、25、26、27和28。
在品红色着色剂中,品红色颜料的实例包括C.I.颜料红1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;C.I.颜料紫3、9、19、23、31、32、33、36、38、43、50;C.I.瓮红1、2、10、13、15、23、29和35。
此外,黄色着色剂的实例包括黄色染料如C.I.溶剂黄19、44、77、79、81、82、93、98、103、104、112和162;黄色颜料如C.I.颜料橙31、43;C.I.颜料黄1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;C.I.瓮黄1、3和20。
各种着色剂如青色着色剂、品红色着色剂和黄色着色剂可分别单独使用或以两种以上的组合使用。在此点上,在使用各种着色剂如青色着色剂、品红色着色剂和黄色着色剂中的两种以上的情况下,这些着色剂的混合比(或共混比)没有特别限定,可根据各着色剂的种类和目标颜色等适当选择。
在将半导体背面用膜2着色的情况中,着色的形式没有特别限定。半导体背面用膜可以是例如,添加有着色剂的单层膜状制品。另外,膜可以是其中至少层压至少由热固性树脂形成的树脂层和着色剂层的层压膜。在这点上,在半导体背面用膜2是树脂层和着色剂层的层压膜的情况中,层压形式的半导体背面用膜2优选具有树脂层/着色剂层/树脂层的层压形式。此时,着色剂层两侧的两个树脂层可以是具有相同组成的树脂层或可以是具有不同组成的树脂层。
根据需要可以向半导体背面用膜2中适当地共混其它添加剂。其它添加剂的实例除了填料、阻燃剂、硅烷偶联剂和离子捕集剂以外,还包括增量剂、防老剂、抗氧化剂和表面活性剂。
填料可为任意无机填料和有机填料,但无机填料是合适的。通过共混填料如无机填料,能够实现赋予半导体背面用膜以导电性、改进导热性和控制弹性模量等。在这点上,半导体背面用膜2可为导电性的或非导电性的。无机填料的实例包括由以下组成的各种无机粉末:二氧化硅,粘土,石膏,碳酸钙,硫酸钡,氧化铝,氧化铍,陶瓷如碳化硅和氮化硅,金属或合金如铝、铜、银、金、镍、铬、铅、锡、锌、钯和焊料,以及碳等。填料可以单独或两种以上组合使用。特别地,填料适合为二氧化硅,特别适合为熔凝硅石。无机填料的平均粒径优选在0.1至80μm的范围内。无机填料的平均粒径通过激光衍射型粒径分布测量设备来测量。
填料(特别地,无机填料)的共混量优选为80重量份以下(0重量份至80重量份),并更优选为0重量份至70重量份,基于100重量份树脂组分。
阻燃剂的实例包括三氧化锑、五氧化锑和溴化环氧树脂。阻燃剂可以单独使用或以两种以上组合使用。硅烷偶联剂的实例包括β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧丙基三甲氧基硅烷和γ-环氧丙氧丙基甲基二乙氧基硅烷。硅烷偶联剂可单独或以两种以上的组合使用。离子捕集剂的实例包括水滑石和氢氧化铋。离子捕集剂可单独或以两种以上的组合使用。
半导体背面用膜2可例如通过利用以下常规方法形成,所述常规方法包括将热固性树脂组分例如环氧树脂和如果需要的热塑性树脂例如丙烯酸类树脂和任选的溶剂以及其它添加剂等混合以制备树脂组合物,然后将其成形为膜状层。具体地,例如,作为半导体背面用膜的膜状层(粘合剂层)能够通过以下方法形成,所述方法为包括将树脂组合物涂布于切割带的压敏粘合剂层32上的方法;包括将树脂组合物涂布于适当的隔离膜(例如,剥离纸)上以形成树脂层(或粘合剂层),然后将其转移(转换)至压敏粘合剂层32上的方法;或者类似的方法。在这点上,树脂组合物可以是溶液或分散液。
此外,在半导体背面用膜2由包含热固性树脂例如环氧树脂的树脂组合物形成的情况下,在将膜施用于半导体晶片前的阶段,半导体背面用膜处于所述热固性树脂为未固化或部分固化的状态中。在该情况下,在将它施涂至半导体晶片后(具体地,通常,在倒装芯片接合步骤中将包封材料固化时),半导体背面用膜中的热固性树脂完全或几乎完全固化。
如上所述,由于即使当半导体背面用膜包含热固性树脂时,该膜也处于热固性树脂未固化或部分固化的状态,因此半导体背面用膜的凝胶分数没有特别限定,但例如在50重量%以下(0重量%-50重量%)并优选30重量%以下(0重量%-30重量%),特别优选10重量%以下(0重量%至10重量%)的范围内适当选择。半导体背面用膜的凝胶分数可以通过以下测量方法测量。
<凝胶分数测量方法>
从半导体背面用膜2中取样约0.1g样品,并精确称重(样品重量),将样品包裹在网型片(mesh-typesheet)中后,将它在室温下在约50ml甲苯中浸渍1星期。此后,从甲苯中取出溶剂不溶性物质(网型片中的内容物),并在130℃下干燥约2小时,将干燥后的溶剂不溶性物质称重(浸渍并干燥后的重量),然后根据下述表达式(a)计算凝胶分数(重量%)。
凝胶分数(重量%)=[(浸渍并干燥后的重量)/(样品重量)]×100(a)
半导体背面用膜的凝胶分数能够通过树脂组分的种类和含量以及交联剂的种类和含量,以及除此之外的加热温度和加热时间等来控制。
本发明中,在半导体背面用膜为由含热固性树脂例如环氧树脂的树脂组合物形成的膜状制品的情况下,可以有效地显示对半导体晶片的紧密粘合性。
此外,由于在半导体晶片的切割步骤中使用切割水,半导体背面用膜吸湿,从而在某些情况下具有常规状态以上的水含量。当在保持如此高的水含量下进行倒装芯片接合时,水蒸气残留在半导体背面用膜和半导体晶片或其加工主体(半导体)之间的粘合界面处,并有时产生浮起(lifting)。因此,通过将半导体背面用膜构造为在其各表面设置具有高水分渗透性的芯材料的结构,水蒸气扩散,由此能够避免该问题。从这样的观点,可以将其中半导体背面用膜形成于芯材料(corematerial)的一个表面或两个表面上的多层结构用作半导体背面用膜。芯材料的实例包括膜(例如,聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二酯膜、聚萘二酸乙二酯膜、聚碳酸酯膜等)、用玻璃纤维或塑料制无纺纤维增强的树脂基材、硅基材和玻璃基材。
半导体背面用膜2的厚度(在层压膜的情况下的总厚度)不特别限定,但是可以为例如适当地选自约2μm至200μm的范围。另外,厚度优选约4μm至160μm,更优选约6μm至100μm,并特别优选10μm至80μm。
半导体背面用膜2在23℃、未固化状态下的拉伸贮能弹性模量优选为1GPa以上(如,1GPa至50GPa),更优选2GPa以上,并特别地3GPa以上是适合的。当拉伸贮能弹性模量为1GPa以上时,在当将半导体芯片与半导体背面用膜2一起从切割带的压敏粘合剂层32剥离后,将半导体背面用膜2放置在支承体上和运输等时,能够有效抑制或者防止半导体背面用膜粘贴至支承体。在这点上,支承体是例如在载体带中的顶带和底带等。在半导体背面用膜2是由含有热固性树脂的树脂组合物形成的情况下,如前所述,由于热固性树脂通常处于未固化或部分固化的状态,半导体背面用膜在23℃下的拉伸贮能弹性模量通常是在23℃下在热固性树脂为未固化或部分固化状态下的拉伸贮能弹性模量。
此处,半导体背面用膜2可以为单层或者多层层压的层压膜。在层压膜的情况下,作为整个层压膜在未固化状态下的拉伸贮能弹性模量充分地为1GPa以上(例如,1GPa-50GPa)。此外,处于未固化状态的半导体背面用膜的拉伸贮能弹性模量(23℃)能够通过适当地设定树脂组分(热塑性树脂和/或热固性树脂)的种类和含量或填料如二氧化硅填料的种类和含量来控制。在半导体背面用膜2是多层层压的层压膜的情况下(在半导体背面用膜具有层压层的形式的情况下),作为层压层的形式,例如可以示例由晶片粘合剂层和激光标识层组成的层压形式。另外,在晶片粘合剂层和激光标识层之间,可以设置其它层(中间层、遮光层、补强层、着色层、基材层、电磁波屏蔽层、导热层、压敏粘合剂层等)。在这点上,晶片粘合剂层是显示对晶片的优异紧密粘合性(粘合性能)的层并且是与晶片背面接触的层。另一方面,激光标识层是显示优异激光标识性的层并且是在半导体芯片的背面上激光标识时利用的层。
拉伸贮能弹性模量通过以下方式测定:制备处于未固化状态的半导体背面用膜2而不层压至切割带3上,并使用由RheometricsCo.,Ltd.制造的动态粘弹性测量设备″SolidAnalyzerRSA2″,在预定温度(23℃),氮气气氛下,在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和升温速率10℃/分钟的条件下,以拉伸模式测量弹性模量,并将测量的弹性模量作为获得的拉伸贮能弹性模量的值。
优选地,半导体背面用膜2用在其至少一个表面上的隔离膜(剥离衬垫)(在图中未示出)保护。例如,在半导体背面用切割带集成膜1中,可将隔离膜设置于半导体背面用膜的至少一个表面上。另一方面,在没有与切割带集成的半导体背面用膜中,隔离膜可以设置于半导体背面用膜的一个表面或两个表面上。隔离膜具有作为用于保护半导体背面用膜直至其实际使用的保护材料的功能。此外,在半导体背面用切割带集成膜1中,隔离膜可以进一步用作将半导体背面用膜2转移至切割带基材的压敏粘合剂层32上的支承基材。当将半导体晶片粘贴至半导体背面用膜上时将隔离膜剥离掉。作为隔离膜,还可以使用聚乙烯或聚丙烯膜以及表面涂有脱模剂如氟类脱模剂或长链烷基丙烯酸酯类脱模剂的塑料膜(例如聚对苯二甲酸乙二酯)或纸等。隔离膜可通过常规已知方法形成。另外,隔离膜的厚度等没有特别限定。
在半导体背面用膜2没有层压切割带3的情况下,半导体背面用膜2可以与在其两侧具有脱模层的一隔离膜一起卷起成为卷形物(roll),在所述卷形物中,所述膜2用在其两个表面上具有脱模层的隔离膜保护。
此外,半导体背面用膜2中可见光的透光率(可见光透光率,波长:400nm-800nm)没有特别限定,但例如,优选在20%以下(0%-20%)、更优选10%以下(0%-10%)、特别优选5%以下(0%-5%)的范围内。当半导体背面用膜2具有大于20%的可见光透光率时,存在光的透过可能不利地影响半导体元件的顾虑。可见光透光率(%)可以通过半导体背面用膜2的树脂组分的种类和含量、着色剂(如,颜料或染料)的种类和含量和无机填料的含量等来控制。
半导体背面用膜2的可见光透光率(%)能够以以下方式测量。即,制备本身厚度(平均厚度)为20μm的半导体背面用膜2,接着,将半导体背面用膜2用具有400nm-800nm波长的可见光以预定强度照射[设备:由ShimadzuCorporation制造的可见光产生设备[商品名″ABSORPTIONSPECTROPHOTOMETER″]],并测量透过的可见光的强度。此外,可以基于穿过半导体背面用膜2的可见光透过前后强度的变化来测定可见光透光率(%)。在这点上,还可以从其厚度不是20μm的半导体背面用膜2的可见光透光率(%;波长:400至800nm)的值得到具有20μm厚度的半导体背面用膜2的可见光透光率(%;波长:400至800nm)。本发明中,虽然在具有20μm厚度的半导体背面用膜2的情况下测定了可见光透光率(%),但是根据本发明的半导体背面用膜没有限定为具有20μm厚度的膜。
此外,作为半导体背面用膜2,更优选具有低吸湿度的膜。具体地,吸湿度优选1重量%以下,更优选0.8重量%以下。通过将吸湿度调整至1重量%以下,能够提高激光标识性。此外,例如,在再流步骤(reflowstep)中能够抑制或防止半导体背面用膜2和半导体元件之间的空隙的产生。吸湿度是由使半导体背面用膜2在温度85℃和湿度85%RH的气氛下静置168小时前后重量变化计算的值。在半导体背面用膜2是由含热固性树脂的树脂组合物形成的情况下,吸湿度意指当将热固化后的膜在温度85℃和湿度85%RH的气氛下静置168小时时得到的值。另外,吸湿度能够例如通过改变待添加的无机填料的量来调整。
另外,作为半导体背面用膜2,具有较小比率的挥发物的膜是更优选的。具体地,热处理后半导体背面用膜2的重量降低比率(重量减少率)优选为1重量%以下并更优选0.8重量%以下。热处理的条件为加热温度250℃和加热时间1小时。通过调整重量减少率至1重量%以下,可以增强激光标识性。另外,例如在再流步骤中可以抑制或防止倒装芯片型半导体器件中的裂纹的产生。重量减少率可例如通过添加在无铅焊料再流时能够减少裂纹产生的无机物质来调整。在半导体背面用膜2由包含热固性树脂组分的树脂组合物形成的情况下,重量减少率为当将热固化后的半导体背面用膜在温度250℃和加热时间为1小时的条件下加热时获得的值。
(切割带)
切割带3包括基材31和形成于基材31上的压敏粘合剂层32。因而,切割带3具有层压基材31和压敏粘合剂层32的构造是足够的。
(基材)
基材(支承基材)可用作压敏粘合剂层等的支承材料。基材31优选具有放射线透过性。作为基材31,例如,可使用合适的薄材料,例如纸类基材如纸;纤维类基材如织物、无纺布、毡和网;金属类基材如金属箔和金属板;塑料基材如塑料膜和片;橡胶类基材如橡胶片;发泡体(foamedbody)如发泡片;及其层压体[特别地,塑料类材料与其它基材的层压体,塑料膜(或片)彼此的层压体等]。在本发明中,作为基材,可适合使用塑料基材如塑料膜和片。此类塑料材料的原料实例包括烯烃类树脂如聚乙烯(PE)、聚丙烯(PP)和乙烯-丙烯共聚物;使用乙烯作为单体组分的共聚物,如乙烯-乙酸乙烯酯共聚物(EVA)、离聚物树脂、乙烯-(甲基)丙烯酸共聚物和乙烯-(甲基)丙烯酸酯(无规,交替)共聚物;聚酯如聚对苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)和聚对苯二甲酸丁二醇酯(PBT);丙烯酸类树脂;聚氯乙烯(PVC);聚氨酯;聚碳酸酯;聚苯硫醚(PPS);酰胺类树脂如聚酰胺(尼龙)和全芳族聚酰胺(wholearomaticpolyamides)(芳族聚酰胺);聚醚醚酮(PEEK);聚酰亚胺;聚醚酰亚胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纤维素类树脂;硅酮树脂;和氟化树脂。
另外,基材31的材料包括聚合物如前述树脂的交联材料。塑料膜可在不拉伸的情况下使用或者需要时可在进行单轴或双轴拉伸处理后使用。根据通过拉伸处理等赋予热收缩性的树脂片,在切割后通过基材31的热收缩减小压敏粘合剂层32和半导体背面用膜2之间的粘合面积,因而能够使半导体芯片的回收容易。
为了提高与邻接层的紧密粘合性和保持性等,可在基材31的表面上实施常规使用的表面处理,例如化学或物理处理如铬酸盐处理、臭氧暴露、火焰暴露、暴露于高压电击或电离辐射处理,或用底漆剂(undercoatingagent)(例如稍后提及的压敏粘合剂物质)的涂布处理。
作为基材31,可适当选择和使用相同种类或不同种类的材料,需要时,可将几种材料共混并使用。此外,为了赋予基材31以抗静电能力,可在基材31上形成由金属、合金或其氧化物组成的厚度为约30至500埃的导电性物质的气相沉积层。基材31可为单层或其两层以上的多层。
基材31的厚度(在层压层的情况下为总厚度)没有特别限定,可依赖于强度、挠性及预期的用途等适当选择。例如,厚度通常为1000μm以下(例如1μm至1000μm),优选10μm至500μm,进一步优选20μm至300μm,特别优选约30μm至200μm,但不限于此。
此外,在不损害本发明的优点等的范围内,基材31可包含各种添加剂(着色剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、阻燃剂等)。
(压敏粘合剂层)
压敏粘合剂层32由压敏粘合剂形成并具有压敏粘合性。没有具体规定,压敏粘合剂可以适当地选自已知的压敏粘合剂。具体地,作为压敏粘合剂,例如具有上述特性的那些适当地选自已知的压敏粘合剂如丙烯酸类压敏粘合剂、橡胶类压敏粘合剂、乙烯基烷基醚类压敏粘合剂、硅酮类压敏粘合剂、聚酯类压敏粘合剂、聚酰胺类压敏粘合剂、聚氨酯类压敏粘合剂、氟类压敏粘合剂、苯乙烯二烯嵌段共聚物类压敏粘合剂,和通过将具有不高于200℃的熔点的热熔融性树脂引入到上述压敏粘合剂制备的蠕变特性改善的压敏粘合剂(例如,参见JP-A56-61468、JP-A-61-174857、JP-A-63-17981、JP-A-56-13040,引入此处以作参考),并在此使用。作为压敏粘合剂,在此也可使用的是照射固化型压敏粘合剂(或能量射线固化型压敏粘合剂)和热膨胀性压敏粘合剂。在此可单独或组合使用一种或多种这样的压敏粘合剂。
作为压敏粘合剂,本文优选使用的是丙烯酸类压敏粘合剂和橡胶类压敏粘合剂,并且更优选的是丙烯酸类压敏粘合剂。丙烯酸类压敏粘合剂包括含有具有一种以上(甲基)丙烯酸烷基酯作为单体组分的丙烯酸类聚合物(均聚物或共聚物)作为基础聚合物的那些。
丙烯酸类压敏粘合剂用(甲基)丙烯酸烷基酯包括,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等。作为(甲基)丙烯酸烷基酯,优选其中具有4至18个碳原子烷基的那些。(甲基)丙烯酸烷基酯中,烷基可以是直链或支链的。
为了改善其内聚力、耐热性和交联性,如果需要,丙烯酸类聚合物可包括相应于与上述(甲基)丙烯酸烷基酯可共聚合的任何其它单体组分的单元。可共聚单体组分包括,例如,含羧基单体如(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸;含酸酐基团的单体例如马来酸酐、衣康酸酐;含羟基的单体例如(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯、(甲基)丙烯酸羟丁酯、(甲基)丙烯酸羟己酯、(甲基)丙烯酸羟辛酯、(甲基)丙烯酸羟癸酯、(甲基)丙烯酸羟月桂酯、甲基丙烯酸(4-羟甲基环己基)甲酯;含磺酸基的单体例如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸;含磷酸基团单体例如2-羟乙基丙烯酰磷酸酯(2-hydroethylacryloylphosphate);(N-取代的)酰胺类单体例如(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺;(甲基)丙烯酸氨基烷基酯类单体例如(甲基)丙烯酸氨基乙酯、(甲基)丙烯酸N,N-二甲基氨基乙酯、(甲基)丙烯酸叔丁基氨基乙酯;(甲基)丙烯酸烷氧基烷基酯类单体例如(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯;氰基丙烯酸酯类单体例如丙烯腈、甲基丙烯腈;含环氧基丙烯酸类单体例如(甲基)丙烯酸缩水甘油酯;苯乙烯类单体例如苯乙烯、α-甲基苯乙烯;乙烯基酯类单体例如乙酸乙烯酯、丙酸乙烯酯;烯烃类单体例如异戊二烯、丁二烯、异丁烯;乙烯基醚类单体例如乙烯基醚;含氮单体例如N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基吗啉、N-乙烯基羧酸酰胺、N-乙烯基己内酰胺;马来酰亚胺类单体如N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺;衣康酰亚胺类单体如N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺;琥珀酰亚胺类单体如N-(甲基)丙烯酰氧亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧八亚甲基琥珀酰亚胺;二醇类丙烯酸酯单体如聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯(methoxyethyleneglycol(meth)acrylate)、甲氧基聚丙二醇(甲基)丙烯酸酯(methoxypolypropyleneglycol(meth)acrylate);具有杂环、卤原子或硅原子(siliconeatom)等的丙烯酸酯类单体,如(甲基)丙烯酸四氢糠酯、含氟(甲基)丙烯酸酯(fluorine(meth)acrylate)、含硅酮(甲基)丙烯酸酯(silicone(meth)acrylate);多官能单体如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、环氧丙烯酸酯、聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯、二乙烯基苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯,等等。这些可共聚合单体组分可单独或以两种以上的组合使用。
本发明中可用的照射固化型压敏粘合剂(或能量射线固化型压敏粘合剂)(组合物)包括,例如,含有在聚合物侧链、主链或主链末端中具有自由基反应性碳-碳双键的聚合物作为基础聚合物的内部型照射固化型压敏粘合剂,及通过将UV固化型单体组分或低聚物组分引入压敏粘合剂中的照射固化型压敏粘合剂等。这里还可以使用的热膨胀性压敏粘合剂包含例如,含有压敏粘合剂和发泡剂(特别地,热膨胀性微球)的那些。
本发明中,在不损害本发明的优点的范围内,压敏粘合剂层32可包含各种添加剂(如,增粘剂、着色剂、增稠剂、增量剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
交联剂没有特别限定,可以使用已知的交联剂。具体地,作为交联剂,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,还提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等,并且异氰酸酯类交联剂或环氧类交联剂是适合的。交联剂可以单独使用或以两种以上的组合使用。另外,交联剂的使用量没有特别限定。
异氰酸酯类交联剂的实例包括低级脂肪族多异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族多异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;和芳香族多异氰酸酯例如2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4′-二苯甲烷二异氰酸酯和苯二甲撑二异氰酸酯。另外,也使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加合物[商品名“COLONATEL”和由NipponPolyurethaneIndustryCo.,Ltd.制造]和三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATEHL”,由NipponPolyurethaneIndustryCo.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N′,N′-四缩水甘油基-间苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油醚和双酚-S-二缩水甘油醚,以及还有在分子中具有两个以上环氧基团的环氧类树脂。
在本发明中,代替使用交联剂或与交联剂一起使用,压敏粘合剂层也可以通过用电子束或UV射线照射来交联。
压敏粘合剂层32例如可通过利用包括混合压敏粘合剂和任选的溶剂及其它添加剂,然后将该混合物成形为片状层的通常使用的方法形成。具体地,例如可提及以下方法,所述方法包括将包含压敏粘合剂和任选的溶剂及其它添加剂的混合物施涂至基材31上的方法;包括施涂上述混合物至适当隔离膜(如剥离纸)上以形成压敏粘合剂层32,然后将其转移(转换)至基材31上的方法,或类似方法。
切割带3的压敏粘合剂层32对倒装芯片型半导体背面用膜2的粘合力(23℃,剥离角180度,剥离速率300mm/分钟)优选在0.02N/20mm至10N/20mm,更优选0.05N/20mm至5N/20mm的范围内。当粘合力为至少0.02N/20mm时,则可以防止切割半导体晶片中半导体芯片的飞离。另一方面,当粘合力为最大10N/20mm时,则在拾取它们时促进半导体芯片的剥离,并防止压敏粘合剂残留。
此外,在本发明中,可使倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1具有抗静电功能。由于该构造,能够防止电路由于在其粘合时和剥离时静电能的产生或由于半导体晶片等通过静电能的带电导致的中断。赋予抗静电功能可通过适当的方式以如下方法进行:添加抗静电剂或导电性物质至基材31、压敏粘合剂层32和半导体背面用膜2的方法,或在基材31上设置由电荷转移配合物(complex)或金属膜等组成的导电层的方法。作为这些方法,优选难以产生具有改变半导体晶片品质的风险的杂质离子的方法。为了赋予导电性和改进导热性等的目的而共混的导电性物质(导电性填料)的实例包括银、铝、金、铜、镍或导电性合金等的球形、针形或薄片形金属粉末;金属氧化物如氧化铝;无定形炭黑和石墨。然而,从不具有漏电性的观点,半导体背面用膜2优选是非导电性的。
此外,倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1可以以卷绕成卷形物(roll)的形式形成或可以以将片材(膜)层压的形式形成。例如,在膜具有卷绕成卷形物的形式的情况下,根据需要,以通过隔离膜保护半导体背面用膜2或半导体背面用膜2和切割带3的层压体的状态将该膜卷绕成卷形物,由此可将膜制备为处于卷绕成卷形物状态或形式的半导体背面用膜2或半导体背面用切割带集成膜1。在这点上,处于卷绕成卷形物状态或形式的半导体背面用切割带集成膜1可由基材31、在基材31的一个表面上形成的压敏粘合剂层32、在压敏粘合剂层32上形成的半导体背面用膜2,和在基材31的另一表面上形成的可剥离处理层(后表面处理层)构成。
此外,半导体背面用切割带集成膜1的厚度(半导体背面用膜的厚度以及包括基材31和压敏粘合剂层32的切割带的厚度的总厚度)可选自例如25μm至1,600μm的范围内,其优选30μm至850μm,更优选35μm至500μm,特别优选50μm至330μm。
在这点上,在半导体背面用切割带集成膜1中,通过控制半导体背面用膜2的厚度与切割带3的压敏粘合剂层32的厚度的比或者半导体背面用膜2的厚度与切割带的厚度(基材31和压敏粘合剂层32的总厚度)的比,能够改进切割步骤中的切割性和拾取步骤中的拾取性等,并且从半导体晶片的切割步骤至半导体芯片的倒装芯片接合步骤均能够有效利用半导体背面用切割带集成膜1。
(半导体背面用切割带集成膜的生产方法)
使用示于图1的半导体背面用切割带集成膜1作为实例而描述根据本实施方案的半导体背面用切割带集成膜的生产方法。首先,基材31可通过常规已知的成膜方法形成。成膜方法的实例包括压延成膜法、在有机溶剂中的浇注法(castingmethod)、在严格密闭体系中的膨胀挤出法、T-模挤出法、共挤出法和干法层压法。
接着,将压敏粘合剂组合物施涂至基材31上,并在其上干燥(和任选地在加热下交联)以形成压敏粘合剂层32。施涂方法(coatingsystem)的实例包括辊涂、丝网涂布(screencoating)和凹版涂布(gravurecoating)等。压敏粘合剂层组合物可直接施涂至基材31,以在基材31上形成压敏粘合剂层32,或可将压敏粘合剂组合物施涂至表面已进行润滑的剥离片等上以在其上形成压敏粘合剂层32,可将压敏粘合剂层32转移至基材31上。由此,形成具有形成于基材31上的压敏粘合剂层32的切割带3。
另一方面,将用于形成半导体背面用膜2的形成材料施涂至剥离片上以形成干燥后具有规定厚度的涂层,然后在规定条件下干燥(在需要热固化的情况下,任选加热,并干燥),以形成涂层。将该涂层转移至压敏粘合剂层32上,从而在压敏粘合剂层32上形成半导体背面用膜2。也可以通过将用于形成半导体背面用膜2的形成材料直接涂布到压敏粘合剂层32上,然后在规定条件下将其干燥(在需要热固化的情况下,任选加热,并使之干燥)在压敏粘合剂层32上形成半导体背面用膜2。根据上述方法,可以得到本发明的半导体背面用切割带集成膜1。在形成半导体背面用膜2中需要热固化的情况下,重要的是进行热固化至涂层可以部分固化这样的程度,但优选地,涂层没有热固化。
本发明的半导体背面用切割带集成膜1能够在包括倒装芯片连接步骤的半导体器件生产时适当使用。即,在倒装芯片安装的半导体器件生产时适合地使用本发明的半导体背面用切割带集成膜1。因此以将半导体背面用切割带集成膜1的半导体背面用膜2粘贴至半导体芯片背面的状态或形式生产倒装芯片安装的半导体器件。因此,可将本发明的半导体背面用切割带集成膜1用于倒装芯片安装的半导体器件(处于通过倒装芯片接合法将半导体芯片固定于被粘物如基板的状态或形式的半导体器件)。
半导体背面用膜2与半导体背面用切割带集成膜1一样,对于倒装芯片安装的半导体器件(处于半导体芯片在倒装芯片接合法中固定至被粘物如基板等的状态或形式的半导体器件)也是有用的。
(半导体晶片)
半导体晶片不特别限制,只要其为已知的或通常使用的半导体晶片即可,可在由各种材料制成的半导体晶片中适当地选择和使用。在本发明中,作为半导体晶片,可适当地使用硅晶片。
(半导体器件的生产方法)
将参考图2A至2D描述生产根据本发明的半导体器件的方法。图2A至2D为示出在使用半导体背面用切割带集成膜1的情况下生产半导体器件的方法的横截面示意图。
在半导体器件生产方法中,可使用半导体背面用切割带集成膜1生产半导体器件。具体地,该生产方法至少包括以下步骤:将半导体晶片粘贴至半导体背面用切割带集成膜中的半导体背面用膜上的步骤;切割半导体晶片以形成半导体元件的步骤,其中将切割深度控制为落入超出面向半导体背面用膜的压敏粘合剂层的一侧至没有到达面向基材的其另一侧的范围内;将半导体芯片与半导体背面用膜一起从切割带的压敏粘合剂层剥离的剥离步骤,和将半导体芯片倒装芯片连接至被粘物上的步骤。
(安装步骤)
首先,如图2A所示,将任选地在半导体背面用切割带集成膜1的半导体背面用膜2上设置的隔离膜适当剥落并将半导体晶片4粘贴至半导体背面用膜2上以通过粘合和保持来固定(安装步骤)。在此情况下,半导体背面用膜2处于未固化状态(包括半固化状态)。此外,将半导体背面用切割带集成膜1粘贴至半导体晶片4的背面。半导体晶片4的背面是指与电路面相对的面(也称为非电路面、非电极形成面等)。粘贴方法不特别限制,但优选通过压接的方法。压接通常在用加压装置如加压辊加压的同时进行。
(切割步骤)
接着,如图2B所示,切割半导体晶片4。从而,将半导体晶片4切断成规定尺寸并个体化(成形为小片),以生产半导体芯片5。例如,所述切割根据常规方法从半导体晶片4的电路面侧进行。此外,本步骤可采取例如称作完全切断的切断方法,该方法形成到达半导体背面用切割带集成膜1的切口(slit)。用于本步骤的切割设备没有特别限定,可使用常规已知的设备。此外,由于半导体晶片4通过具有半导体背面用膜的半导体背面切割带集成膜1来粘合和固定,可以抑制芯片的破裂和芯片的飞散,以及还可以抑制半导体晶片4的损坏。在这点上,当半导体背面用膜2由包含环氧树脂的树脂组合物形成时,即使当将其通过切割切断时,也可抑制或防止在切断面处发生粘合剂从半导体背面用膜的粘合剂层挤出。结果,可抑制或防止切断面自身的再附着(粘连(blocking)),从而可进一步方便地进行以下要描述的拾取。
在本发明的半导体器件生产方法中,将切割中的切割深度控制为落入超出面向(接触)半导体背面用膜2的压敏粘合剂层32的侧面32a而没有到达面向(接触)基材31的其侧面32b的范围内。此前,切割中,将半导体晶片切割至到达基材的深度以确保制造边缘。然而,在使用集成膜1的本发明中,可以通过切割至到达压敏粘合剂层(未到达基材)的深度来很好地确保制造边缘。因此,可以防止由于切割基材31引起的切割粉尘的产生,结果,通过防止半导体芯片周围的毛刺的产生同时保持膜1的良好切割性可以有效地生产高可靠性的半导体器件。
切割深度没有特别规定,只要其落入超出压敏粘合剂层32的上表面32a而没有到达其下表面32b的范围即可。然而,切割中,优选将切割深度规定为落入从面向半导体背面用膜2的压敏粘合剂层32的表面32a起压敏粘合剂层32的10%至70%的范围内,更优选15%至65%的范围内,更加优选20%至60%的范围内。当将切割深度控制在上述范围内时,则即使考虑到各种切割机的切割深度精度波动,也可以防止切割至到达基材,因此本发明的生产方法可以容易地接受生产线中的各种变化,同时防止深度切割至到达基材,另外,如上控制切割深度的本发明的生产方法还可以确保切割中的制造边缘,并因此可以防止各种不足如切割不良等的产生。
在半导体背面用切割带集成膜1扩展(expanded)的情况下,扩展可使用常规已知的扩展设备进行。所述扩展设备具有能够推动半导体背面用切割带集成膜1向下通过切割环的环形(douthnut-shaped)外环,和直径小于外环并支撑半导体背面用切割带集成膜的内环。由于该扩展步骤,可以防止相邻的半导体芯片在以下要描述的拾取步骤中通过彼此接触而损坏。
(拾取步骤)
为了收集粘合并固定至半导体背面用切割带集成膜1的半导体芯片5,如图2C所示进行半导体芯片5的拾取,以将半导体芯片5与半导体背面用膜2一起从切割带3剥离。拾取方法没有特别限定,可采用常规已知的各种方法。例如,可提及包括用针状物从半导体背面用切割带集成膜1的基材31侧向上推动各半导体芯片5,并用拾取设备拾取推起的半导体芯片5的方法。在这点上,拾取的半导体芯片5的背面用半导体背面用膜2保护。
(倒装芯片连接步骤)
如图2D所示,将拾取的半导体芯片5通过倒装芯片接合法(倒装芯片安装法)固定于被粘物6如基板上。具体地,以半导体芯片5的电路面(也称为正面、电路图案形成面、电极形成面等)与被粘物6相对的形式,根据常规方式将半导体芯片5固定至被粘物6。例如,使在半导体芯片5的电路面侧形成的凸块51与用于连接粘贴至被粘物6的连接垫的导电性材料61(如焊料)接触,并在加压下熔融导电性材料61,由此能够确保半导体芯片5和被粘物6之间的电连接,并能够将半导体芯片5固定至被粘物6(倒装芯片接合步骤)。在此情况下,在半导体芯片5和被粘物6之间形成间隙并且间隙之间的距离通常为约30μm至300μm。在这点上,在将半导体芯片5倒装芯片接合至被粘物6之后,重要的是将半导体芯片5和被粘物6的相对面以及间隙洗涤,然后将包封材料(如包封树脂)填充入间隙中以进行包封。
作为被粘物6,可使用各种基板如引线框和电路板(如布线电路板)。基板的材料没有特别限定,可提及陶瓷基板和塑料基板。塑料基板的实例包括环氧基板、双马来酰亚胺三嗪基板和聚酰亚胺基板。
在倒装芯片接合步骤中,凸块和导电性材料的材料没有特别限定,其实例包括焊料(合金)如锡-铅类金属材料、锡-银类金属材料、锡-银-铜类金属材料、锡-锌类金属材料和锡-锌-铋类金属材料,以及金类金属材料和铜类金属材料。
此外,在倒装芯片接合步骤中,将导电性材料熔融以连接半导体芯片5的电路面侧处的凸块和在被粘物6表面上的导电性材料。导电性材料熔融时的温度通常为约260℃(例如,250℃至300℃)。通过用环氧树脂等形成半导体背面用膜,可使本发明的半导体背面用切割带集成膜具有能够承受在倒装芯片接合步骤中的高温的耐热性。
在本步骤中,优选洗涤半导体芯片5和被粘物6之间的相对面(电极形成面)以及间隙。在洗涤时使用的洗涤液没有特别限定,其实例包括有机洗涤液和水性洗涤液。在本发明的半导体背面用切割带集成膜中的半导体背面用膜具有对洗涤液的耐溶剂性,并且对这些洗涤液基本不具有溶解性。因此,如上所述,可采用各种洗涤液作为该洗涤液,并可通过任何常规方法而无需任何特别的洗涤液实现该洗涤。
接着,进行包封步骤以包封倒装芯片接合的半导体芯片5和被粘物6之间的间隙。包封步骤使用包封树脂进行。在此情况下的包封条件不特别限制,但包封树脂的固化通常在175℃下进行60秒至90秒。然而,在本发明中,不限于此,例如,固化可在165-185℃的温度下进行几分钟。通过在该步骤中的热处理,不仅包封树脂而且半导体背面用膜2也同时热固化。因此,包封树脂和半导体背面用膜2随着热固化的进行而同时固化并收缩。结果,通过半导体背面用膜2的固化收缩可以消除或松弛由于包封树脂的固化收缩引起的给予半导体芯片5的应力。此外,该步骤中,半导体背面用膜2可完全或几乎完全热固化并能够以优异的紧密粘合性粘贴至半导体元件的背面。此外,即使当根据本发明的半导体背面用膜2处于未固化状态时,该膜也可在包封步骤时与包封材料一起热固化,因此不需要新添加半导体背面用膜2的热固化步骤。
包封树脂没有特别限定,只要该材料为具有绝缘性的树脂(绝缘树脂)即可,并可在已知的包封材料如包封树脂中适当选择和使用。包封树脂优选具有弹性的绝缘树脂。包封树脂的实例包括含环氧树脂的树脂组合物。作为环氧树脂,可提及以上示例的环氧树脂。此外,由包含环氧树脂的树脂组合物组成的包封树脂除了环氧树脂之外还可包含除了环氧树脂之外的热固性树脂(如酚醛树脂)或热塑性树脂。此外,也可利用酚醛树脂作为环氧树脂用固化剂,作为此类酚醛树脂,可提及以上示例的酚醛树脂。
根据使用半导体背面用切割带集成膜1或半导体背面用膜2制造的半导体器件(倒装芯片安装的半导体器件),将半导体背面用膜粘贴至半导体芯片背面,因此,可以以优良的可视性实施激光标识。特别地,即使当标识方法是激光标识法时,激光标识也能够以优良的对比度实施,并可以观察通过具有良好可视性的激光标识实施的各种信息(例如文字信息和图形信息)。在激光标识时,可利用已知的激光标识设备。此外,作为激光器,可以利用各种激光器如气体激光器、固态激光器和液体激光器。具体地,作为气体激光器,可利用任何已知的气体激光器而没有特别限制,但二氧化碳激光器(CO2激光器)和准分子激光器(ArF激光器、KrF激光器、XeCl激光器、XeF激光器等)是适合的。作为固态激光器,可利用任何已知的固态激光器而没有特别限定,但YAG激光器(如Nd:YAG激光器)和YVO4激光器是适合的。
由于使用本发明的半导体背面用切割带集成膜1或半导体背面用膜2生产的半导体器件为通过倒装芯片安装法安装的半导体器件,所以该器件与通过模片接合安装法安装的半导体器件相比具有薄型化和小型化的形状。因此,可适当采用所述半导体器件作为各种电子器件和电子部件或其材料和构件。具体地,作为利用本发明的倒装芯片安装的半导体器件的电子器件,可提及所谓的“移动电话”和“PHS”,小型计算机[如,所谓的“PDA”(手持终端),所谓的“笔记本尺寸的个人计算机”,所谓的“NetBook(商标)”和所谓的“可穿戴计算机”等],具有集成“移动电话”和计算机形式的小型电子器件,所谓的“DigitalCamera(商标)”,所谓的“数码摄像机”,小型电视机,小尺寸游戏机,小型数字音频播放机,所谓的“电子记事本”,所谓的“电子词典”,用于所谓的“电子书”的电子器件终端,和移动电子器件(可携带电子器件)如小型数字型手表等。不必说,也可提及除了移动器件之外的电子器件(固定型电子器件等),例如所谓的“桌面个人计算机”、薄型电视机、用于记录和复制的电子器件(硬盘记录机(harddiskrecorders)、DVD播放机等)、投影仪和微型机等。另外,电子部件或用于电子器件和电子部件的材料和构件没有特别限制,其实例包括用于所谓的“CPU”的部件和用于各种记忆器件(所谓的“存储器”、硬盘等)的构件。
实施例
以下将详细地说明性描述本发明的优选实施例。然而,本发明不限于以下实施例,除非其超出本发明的主旨。此外,除非另外说明,在各实施例中的份为重量基准。
实施例1
<半导体背面用膜的制备>
基于100份包含丙烯酸乙酯和甲基丙烯酸甲酯作为主要组分的丙烯酸酯类聚合物(商品名“PARACRONW-197CM”,由NegamiChemicalIndustrialCo.,Ltd.制造),将113份环氧树脂(商品名“EPICOAT1004”,由JERCo.,Ltd.制造)、121份酚醛树脂(商品名“MILEXXLC-4L”,由MitsuiChemicals,Inc.制造)、246份球形二氧化硅(商品名“SO-25R”,由AdmatechsCo.Ltd.制造)、5份染料1(商品名“OILGREEN502”,由OrientChemicalIndustriesCo.,Ltd.制造)和5份染料2(商品名:“OILBLACKBS”,由OrientChemicalIndustriesCo.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的压敏粘合剂组合物溶液。
将该压敏粘合剂组合物溶液施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度为50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)为20μm的半导体背面用膜。
<半导体背面用切割带集成膜的制备>
使用手动辊(handroller)将半导体背面用膜粘贴至切割带(商品外″V-8-T″,由NittoDenkoCo.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度20μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜。
实施例2
<半导体背面用膜的制备>
根据如实施例1的相同方法制备具有20μm厚度(平均厚度)的半导体背面用膜。
<半导体背面用切割带集成膜的制备>
使用手动辊将半导体背面用膜粘贴到切割带(商品名″V-8-T″由NittoDenkoCo.,Ltd.制造;基材平均厚度65μm;压敏粘合剂层的平均厚度,30μm)的压敏粘合剂层,以制备半导体背面用切割带集成膜。
实施例3
<半导体背面用膜的制备>
根据如实施例1的相同方法制备具有20μm厚度(平均厚度)的半导体背面用膜。
<半导体背面用切割带集成膜的制备>
使用手动辊将半导体背面用膜粘贴到切割带(商品名″V-8-T″由NittoDenkoCo.,Ltd.制造;基材平均厚度65μm;压敏粘合剂层的平均厚度,40μm)的压敏粘合剂层,以制备半导体背面用切割带集成膜。
比较例1
<半导体背面用膜的制备>
根据如实施例1的相同方法制备具有20μm厚度(平均厚度)的半导体背面用膜。
<半导体背面用切割带集成膜的制备>
使用手动辊将半导体背面用膜粘贴到切割带(商品名″V-8-T″由NittoDenkoCo.,Ltd.制造;基材平均厚度65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层,以制备半导体背面用切割带集成膜。
比较例2
<半导体背面用膜的制备>
根据如实施例1的相同方法制备具有20μm厚度(平均厚度)的半导体背面用膜。
<半导体背面用切割带集成膜的制备>
使用手压辊将半导体背面用膜粘贴到切割带(商品名″V-8-T″由NittoDenkoCo.,Ltd.制造;基材平均厚度65μm;压敏粘合剂层的平均厚度,50μm)的压敏粘合剂层,以制备半导体背面用切割带集成膜。
(评价)
根据以下方法评价实施例1至3和比较例1至2中制备的半导体背面用切割带集成膜的切割性及其拾取性。结果示于表1中。
<切割性/拾取性的评价方法>
使用实施例1至3和比较例1至2的半导体背面用切割带集成膜,以下述方式实际切割半导体晶片从而评价膜的切割性。随后,评价膜的剥离容易性。以此方式,评价半导体背面用切割带集成膜的切割能力及其拾取能力。
将半导体晶片(直径:8英寸,厚度:0.6mm;硅镜面晶片)进行背面抛光处理,并使用具有厚度为0.2mm的镜面晶片作为工件。从半导体背面用切割带集成膜剥离隔离膜后,将镜面晶片(工件)通过在70℃下辊压接合粘贴至半导体背面用膜上。基于此,将工件以切割刀的切割深度能够到达切割带集成膜的压敏粘合剂层的中心的方式切割。以完全切断进行切割以致为10mm见方的芯片。半导体晶片抛光处理条件、粘贴条件和切割条件如下。
(半导体晶片磨削的条件)
磨削设备:商品名″DFG-8560″,由DISCOCorporation制造
半导体晶片:8英寸直径(将背面从厚度0.6mm磨削至厚度为0.2mm)
(粘贴条件)
粘贴设备:商品名“MA-3000III”,由NittoSeikiCo.,Ltd.制造
粘贴速度:10mm/分钟
粘贴压力:0.15MPa
粘贴时的阶段温度:70℃
(切割条件)
切割设备:商品名″DFD-6361″,由DISCOCorporation制造
切割环:″2-8-1″(由DISCOCorporation制造)
切割速度:30mm/秒
切割刀:
Z1:“203O-SE27HCDD”,由DISCOCorporation制造
Z2:“203O-SE27HCBB”,由DISCOCorporation制造
切割刀旋转速度:
Z1:40,000r/分钟
Z2:45,000r/分钟
刀高度:
Z1:距晶片表面110μm
Z2:切割带集成膜的压敏粘合剂层的中心
切割方法:阶梯切割
晶片芯片尺寸:10.0mm见方
(切割性评价)
切割操作中,根据以下方法,评价工件芯片关于是否它们在工件芯片的侧面上没有来自基材的杂质(毛刺)的污染的情况下和在切割的工件芯片既没有裂纹也没有破损的情况下良好切割的切割性能。
(毛刺评价)
拾取后,用显微镜(放大倍数:20倍)观察具有粘贴至其的半导体背面用膜的芯片的各侧面(所有100个芯片的四个侧面)。将上述切割条件下已良好切割而没有毛刺的样品评为“良好”;将不能良好切割而在它们周围具有毛刺的样品评为“差”。
(破损/破裂评价)
如毛刺评价那样,用显微镜(放大倍数:20倍)观察具有粘贴至其的半导体背面用膜的芯片的各侧面(所有100个芯片的四个侧面)。将在其侧面上没有破损或破裂的样品评为“良好”;并将在其侧面上已破损或破裂的样品评为“差”。
(拾取性能评价)
接下来,通过用针状物从半导体背面用切割带集成膜的切割带侧向上推动芯片,将通过切割得到的工件芯片与半导体背面用膜一起从切割带的压敏粘合剂层拾取。从而得到其背面用半导体背面用膜保护的工件芯片。测定此时芯片(总计400片)的拾取成功率(%)以评价拾取性。因此,当拾取率越接近于100%时,拾取性越好。
拾取条件如下。
(半导体晶片拾取条件)
拾取设备:商品名“SPA-300”,由ShinkawaCo.,Ltd.制造
拾取针状物的数量:9个针状物
针状物的推动速度:20mm/s
针状物的推动距离:500μm
拾取时间:1秒
切割带扩展量:3mm
表1
从表1,可以看出,当使用实施例1至3的半导体背面用切割带集成膜时,通过切割得到的工件芯片既没有破裂也没有破损,并且在其表面侧的周围没有来自基材的毛刺,并且切割带集成膜具有良好切割性。另外,进一步已知,在拾取它们时,切割的芯片显示良好的剥离容易性。另一方面,比较例1的半导体背面用切割带集成膜,虽然其拾取性良好,但其在切割工件芯片的各面周围产生毛刺,因此,切割带集成膜的切割性差。当切割中使用比较例2的半导体背面用切割带集成膜时,切割工件芯片破裂或破损,或即,切割带集成膜的切割性差,另外,其拾取性也差。
虽然参考其具体实施方案并详细地描述了本发明,但对本领域技术人员来说明显的是,不背离其范围的情况下可以在其中进行各种变化和改进。
本申请基于2010年7月29日提交的日本专利申请第2010-170933号,将其全部内容引入此处以作参考。
Claims (3)
1.一种半导体背面用切割带集成膜,其包括:包括依次层压的基材和压敏粘合剂层的切割带,和在所述切割带的所述压敏粘合剂层上设置的半导体背面用膜,
其中所述压敏粘合剂层具有20μm至40μm的厚度,
其中比率x/y为1.1至4,其中x为所述压敏粘合剂层的厚度,y为所述半导体背面用膜的厚度,
其中比率z/y为1.5至25,其中y为所述半导体背面用膜的厚度,z为所述切割带的厚度。
2.一种生产半导体器件的方法,所述方法使用根据权利要求1所述的半导体背面用切割带集成膜,所述方法包括:
将半导体晶片粘贴至所述半导体背面用切割带集成膜的半导体背面用膜上,
切割所述半导体晶片以形成半导体芯片,其中将切割深度控制为落入超出所述压敏粘合剂层面向半导体背面用膜一侧的面且没有到达所述压敏粘合剂层面向所述基材的另一侧的面的范围内,
将所述半导体芯片与所述半导体背面用膜一起从所述切割带的所述压敏粘合剂层剥离,和
将所述半导体芯片倒装芯片连接至被粘物上。
3.根据权利要求2所述的生产半导体器件的方法,其中将切割中的所述切割深度控制为落入从所述压敏粘合剂层面向所述半导体背面用膜侧的面起所述压敏粘合剂层厚度的10%至70%的范围内。
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US9484260B2 (en) * | 2012-11-07 | 2016-11-01 | Semiconductor Components Industries, Llc | Heated carrier substrate semiconductor die singulation method |
US9136173B2 (en) * | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
JP2014207355A (ja) * | 2013-04-15 | 2014-10-30 | 住友ベークライト株式会社 | 半導体ウエハ用ダイシングフィルム |
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US9385040B2 (en) * | 2014-02-19 | 2016-07-05 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing a semiconductor device |
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