JP4769975B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4769975B2 JP4769975B2 JP2006091171A JP2006091171A JP4769975B2 JP 4769975 B2 JP4769975 B2 JP 4769975B2 JP 2006091171 A JP2006091171 A JP 2006091171A JP 2006091171 A JP2006091171 A JP 2006091171A JP 4769975 B2 JP4769975 B2 JP 4769975B2
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- Japan
- Prior art keywords
- semiconductor device
- protective film
- dicing sheet
- semiconductor
- manufacturing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Description
先ず、図1を参照して本形態の製造方法により製造される半導体装置10の構成を説明する。図1(A)は半導体装置10の断面図であり、図1(B)はその斜視図である。
本形態では、図2から図5を参照して、第1の実施の形態にて構成を説明した半導体装置の製造方法を説明する。
11 半導体基板
12 絶縁層
13 電極
14 配線
15 外部電極
16 被覆層
17 保護膜
18 記号マーク
19 位置マーク
20 認識マーク
21 ダイシングシート
22 半導体ウェハ
23 ウェハリング
24 半導体装置部
25 接着層
26 ブレード
27 ダイシングライン
28 レーザー
29 画像
30 紫外線
31 反射板
32 カメラ
Claims (4)
- 樹脂から成り、染料、顔料またはフィラーが充填された保護層が設けられたダイシングシートに、複数の半導体装置部が形成された半導体ウェハの裏面に前記保護膜が付着するように、前記半導体ウェハを貼りあわせ、
前記半導体ウェハおよび前記保護膜をダイシングして前記半導体装置部を互いに分離し、
前記ダイシングシートを透過して前記保護膜にレーザー光線を照射することにより、前記保護膜に認識マークを形成し、
分離された前記半導体装置部の裏面に前記保護膜に設けられた認識マークが残る様に、前記ダイシングシートから前記半導体装置部を剥離させる事を特徴とする半導体装置の製造方法。 - 前記保護膜は、前記ダイシングシートよりも前記光線の吸収率が高いことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記保護膜は、前記ダイシングシートよりも硬い材料から成ることを特徴とする請求項2記載の半導体装置の製造方法。
- 前記顔料を前記保護層に充填して吸収効率を高め、更に前記フィラーを充填して前記硬度を高めた請求項3に記載の半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006091171A JP4769975B2 (ja) | 2006-03-29 | 2006-03-29 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006091171A JP4769975B2 (ja) | 2006-03-29 | 2006-03-29 | 半導体装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007266420A JP2007266420A (ja) | 2007-10-11 |
JP2007266420A5 JP2007266420A5 (ja) | 2009-04-09 |
JP4769975B2 true JP4769975B2 (ja) | 2011-09-07 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006091171A Expired - Fee Related JP4769975B2 (ja) | 2006-03-29 | 2006-03-29 | 半導体装置の製造方法 |
Country Status (1)
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JP (1) | JP4769975B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010153607A (ja) * | 2008-12-25 | 2010-07-08 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP5456440B2 (ja) * | 2009-01-30 | 2014-03-26 | 日東電工株式会社 | ダイシングテープ一体型ウエハ裏面保護フィルム |
JP5640050B2 (ja) * | 2009-01-30 | 2014-12-10 | 日東電工株式会社 | 半導体装置の製造方法 |
JP5805367B2 (ja) * | 2009-01-30 | 2015-11-04 | 日東電工株式会社 | ダイシングテープ一体型ウエハ裏面保護フィルム |
JP5976857B2 (ja) * | 2009-01-30 | 2016-08-24 | 日東電工株式会社 | ダイシングテープ一体型ウエハ裏面保護フィルム |
JP5506209B2 (ja) * | 2009-02-26 | 2014-05-28 | 三菱樹脂株式会社 | 離型フィルム |
JP5885325B2 (ja) | 2009-05-29 | 2016-03-15 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム |
CN101924055A (zh) * | 2009-06-15 | 2010-12-22 | 日东电工株式会社 | 半导体背面用切割带集成膜 |
CN101924056A (zh) | 2009-06-15 | 2010-12-22 | 日东电工株式会社 | 半导体背面用切割带集成膜 |
JP5501938B2 (ja) | 2009-12-24 | 2014-05-28 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム |
JP5681374B2 (ja) | 2010-04-19 | 2015-03-04 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム |
JP5439264B2 (ja) | 2010-04-19 | 2014-03-12 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム |
JP2011253879A (ja) * | 2010-06-01 | 2011-12-15 | Nec Corp | 半導体素子及び半導体内蔵基板 |
JP5249290B2 (ja) * | 2010-07-20 | 2013-07-31 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム、ダイシングテープ一体型半導体裏面用フィルム、半導体装置の製造方法、及び、フリップチップ型半導体装置 |
JP5048815B2 (ja) * | 2010-07-20 | 2012-10-17 | 日東電工株式会社 | フリップチップ型半導体裏面用フィルム、及び、ダイシングテープ一体型半導体裏面用フィルム |
JP5641641B2 (ja) * | 2010-07-29 | 2014-12-17 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
JP2012033637A (ja) | 2010-07-29 | 2012-02-16 | Nitto Denko Corp | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
SG11201503050VA (en) * | 2012-08-23 | 2015-06-29 | Lintec Corp | Dicing sheet with protective film formation layer and method for producing chip |
JP2014123743A (ja) * | 2013-12-27 | 2014-07-03 | Nitto Denko Corp | ダイシングテープ一体型半導体裏面用フィルム |
JP5917577B2 (ja) * | 2014-01-22 | 2016-05-18 | 日東電工株式会社 | ダイシングテープ一体型半導体裏面用フィルム及び半導体装置の製造方法 |
WO2019131854A1 (ja) * | 2017-12-28 | 2019-07-04 | 日東電工株式会社 | 半導体背面密着フィルム |
JP2020102553A (ja) * | 2018-12-21 | 2020-07-02 | 日東電工株式会社 | 半導体背面密着フィルム |
JP2020035820A (ja) * | 2018-08-28 | 2020-03-05 | 太陽誘電株式会社 | モジュールおよびその製造方法 |
CN113260480A (zh) * | 2021-03-31 | 2021-08-13 | 长江存储科技有限责任公司 | 用于切割半导体结构的激光切割系统及方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005505145A (ja) * | 2001-10-09 | 2005-02-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電子コンポーネントの製造方法、及び該方法によって得られる電子コンポーネント |
JP3949983B2 (ja) * | 2002-03-18 | 2007-07-25 | 旭化成ケミカルズ株式会社 | 樹脂成形品表面への黒色のレーザーマーキング法、及び成形品表面への導電部形成法、並びに該導電部の使用方法 |
JP2004063551A (ja) * | 2002-07-25 | 2004-02-26 | Hitachi Chem Co Ltd | 半導体素子表面保護用フィルム及び半導体素子ユニット |
JP2005203696A (ja) * | 2004-01-19 | 2005-07-28 | Casio Micronics Co Ltd | 半導体装置、その製造装置、および半導体装置へのマーキング方法 |
JP2005310889A (ja) * | 2004-04-19 | 2005-11-04 | Seiko Epson Corp | 半導体装置の製造方法、半導体装置及び識別情報付きウェハ |
-
2006
- 2006-03-29 JP JP2006091171A patent/JP4769975B2/ja not_active Expired - Fee Related
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