CN102668040A - 半导体装置以及半导体装置的制造方法 - Google Patents
半导体装置以及半导体装置的制造方法 Download PDFInfo
- Publication number
- CN102668040A CN102668040A CN2010800426593A CN201080042659A CN102668040A CN 102668040 A CN102668040 A CN 102668040A CN 2010800426593 A CN2010800426593 A CN 2010800426593A CN 201080042659 A CN201080042659 A CN 201080042659A CN 102668040 A CN102668040 A CN 102668040A
- Authority
- CN
- China
- Prior art keywords
- layer
- titanium
- semiconductor device
- nitride semiconductor
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title description 11
- 239000010936 titanium Substances 0.000 claims abstract description 90
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 31
- 150000004767 nitrides Chemical class 0.000 claims abstract description 23
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000006104 solid solution Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 14
- 238000007747 plating Methods 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005204 segregation Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
本发明提供一种半导体装置的制造方法,该半导体装置具有相对于氮化物半导体的接触电阻较低的电极。该制造方法具有:含碳层形成工序,在氮化物半导体层上形成含有碳的含碳层;含钛层形成工序,在含碳层上形成含有钛的含钛层。在含钛层和氮化物半导体层之间形成TiN和TiC的无限固溶体Ti(C,N)的层。由此,含钛层在其边界部整体上相对于氮化物半导体层被欧姆接触。
Description
技术领域
本说明书所记载的技术涉及一种半导体装置,其具有相对于氮化物半导体层被欧姆接触的电极。
背景技术
如日本特许公开公报2008-235405号(以下,称为专利文献1)所公开的内容所示,相对于GaN层欧姆接触的电极的材料,通常使用Ti。通常,在形成该电极时,在GaN层上形成Ti层,之后对半导体基板实施热处理。当半导体基板被实施热处理时,在Ti层和GaN层的边界部上将形成TIN层。TiN层相对于GaN层而表现出良好的欧姆特性。由此,Ti层成为相对于GaN层的欧姆电极。
发明内容
发明所要解决的课题
在上述的电极形成方法中,在Ti层和GaN层的边界部上以岛状而形成有TiN层。即,未在Ti层和GaN层的边界部整体上形成TiN层,而是在其边界部上局部地形成TiN层。其原因在于,在实施热处理时,在Ti层和GaN层的边界部上TiN会产生偏析。如此,在上述的电极形成方法中,由于在Ti层和GaN层的边界部上以岛状而形成了TiN层,因此Ti层和GaN层之间的接触电阻增大。
本说明书提供一种半导体装置及其制造方法,该半导体装置具有相对于氮化物半导体的接触电阻较低的电极。
用于解决课题的方法
本说明书所公开的半导体装置的制造方法具有:含碳层形成工序和含钛层形成工序。在含碳层形成工序中,在氮化物半导体层上形成含有碳的含碳层。在含钛层形成工序中,在含碳层上形成含有钛的含钛层形成工序。
当在含碳层上形成含钛层时,通过氮化物半导体层中的N、含碳层中的C以及含钛层中的Ti,从而形成了作为TiN和TiC的无限固溶体的Ti(C,N)。Ti(C,N)相对于氮化物半导体层而表现出良好的欧姆特性。此外,由于Ti(C,N)为无限固溶体,因此不易产生偏析。因此,含钛层在较大的范围内与氮化物半导体层欧姆接触。因此,含钛层与氮化物半导体层之间的接触电阻与现有的电极相比而降低。根据该制造方法,能够获得如下的半导体装置,其具有与现有的电极相比,相对于氮化物半导体层的接触电阻较低的电极(即,含钛层)。
上述的制造方法中,也可以采用如下方式,即,在含钛层形成工序之后,还具有对半导体基板进行加热的退火工序。
当在含钛层形成工序之后实施退火工序时,氮化物半导体层和含钛层之间的接触电阻将进一步降低。可以认为其原因在于,通过退火工序,从而促进了由氮化物半导体层中的N、含碳层中的C、以及含钛层中的Ti生成无限固溶体Ti(C,N)的反应。
此外,本说明书提供一种具有相对于氮化物半导体层的接触电阻较低的电极的半导体装置。该半导体装置具有:氮化物半导体层、无限固溶体层、以及含钛层。无限固溶体层被形成在氮化物半导体层上,并由碳化钛和氮化钛的无限固溶体构成。含钛层被形成在无限固溶体层上,并含有钛。
由于在该半导体装置中,含钛层经由无限固溶体层而与氮化物半导体层连接,因此含钛层和氮化物半导体层之间的接触电阻较低。含钛层成为相对于氮化物半导体层的良好的欧姆电极。
附图说明
图1为表示实施例1的半导体装置的制造方法中形成电极的工序的流程图。
图2为在C层12形成之后的n型GaN层10的表面附近的剖视图。
图3为在Ti层14形成之后的n型GaN层10的表面附近的剖视图。
图4为表示通过现有的方法而形成的电极的、电流-电压特性的图表。
图5为表示通过实施例1以及实施例2的方法而形成的电极的、电流-电压特性的图表。
具体实施方式
(实施例)
下面对实施例所涉及的半导体装置的制造方法进行说明。另外,由于本制造方法中,在形成电极的工序中具有特征,因此关于其他工序(在半导体基板内形成各种区域的工序),省略对其说明。
(实施例1)
在实施例1的制造方法中,按照图1的流程图,在半导体基板的表面上形成电极。在本实施例中,在半导体基板中的、n型的GaN层的表面上形成电极。在步骤S2中,对半导体基板的表面进行溅射清洗。在步骤S4中,如图2所示,通过阴极真空喷镀而在n型的GaN层10的表面上形成由碳构成的C层12。在步骤S6中,通过阴极真空喷镀而在C层12的表面上形成由钛构成的Ti层14。当在步骤S6中形成Ti层14时,如图3所示,在Ti层14和GaN层10之间形成有作为TiC和TiN的无限固溶体的、Ti(C,N)的层16。可以认为其原因在于,Ti层14中的Ti、C层12中的C、以及GaN层10中的N通过Ti层14的阴极真空喷镀时所产生的热量而发生反应。在步骤S6中形成的Ti层14成为半导体装置的电极。
另外,在步骤S4、S6中,在应该形成电极的范围内选择性地形成C层12以及Ti层14。C层12以及Ti层14能够通过现有的公知技术而选择性地形成。此外,在步骤S6中,形成与在步骤S4中形成的C层12相比更厚的Ti层14。
如果形成Ti层14,则能够在Ti层14和GaN层10之间得到接触电阻较低的欧姆接触。可以认为其理由如下。n型的GaN的功函数为约3.1eV。TiC的功函数为约3.5eV。TiN的功函数为约3.75eV。即,TiC以及TiN均具有高于n型的GaN的功函数。因此,TiC以及TiN相对于n型的GaN具有欧姆特性。因此,作为TiC和TiN的无限固溶体的Ti(C,N),相对于n型的GaN也具有欧姆特性。此外,由于Ti(C,N)为无限固溶体,因此不易产生偏析。因此,在步骤S6中,Ti(C,N)层16均匀地形成在Ti层14和GaN层10的边界部整体上。因此,在步骤S6中形成的Ti层14以遍布与GaN层10的边界部整体的方式而与GaN层10欧姆接触。因此,与相对于GaN层以岛状而欧姆接触的现有的电极相比,Ti层14相对于GaN层的接触电阻更低。
图4图示了在通过现有的方法(即,直接在n型GaN层上形成Ti层,之后,对半导体基板进行退火的方法)而形成了Ti层的情况下的、Ti层和n型GaN层之间的电流-电压特性。此外,图5中的图表A1图示了通过实施例1的制造方法而形成的、Ti层14和n型GaN层10之间的电流-电压特性。通过对图4以及图5进行比较可以明确看出,通过实施例1的制造方法而形成的Ti层14,与通过现有技术而形成的Ti层相比,接触电阻更低。因此,通过实施例1的制造方法而形成的Ti层14成为良好的欧姆电极。
(实施例2)
接下来,对实施例2的半导体装置的制造方法进行说明。在实施例2的制造方法中,与实施例1的制造方法同样地,实施步骤S2至S6。并且,在实施例2的制造方法中,在步骤S6之后,对半导体基板进行退火处理。在退火处理中,将半导体基板在大约873K的温度中保持大约300秒。
图5中的图表A2图示了通过实施例2的制造方法而形成的Ti层14和n型GaN层10之间的电流-电压特性。如图5所示,通过对半导体基板进行退火处理,从而进一步降低Ti层14相对于GaN层10的接触电阻。根据实施例2的制造方法,能够制造出具有接触电阻更低的电极的半导体装置。
如以上的说明所述,根据实施例1以及实施例2的制造方法,能够制造出如下的半导体装置,其具有与现有技术相比相对于n型GaN层10的接触电阻更低的电极(即,Ti层14)。此外,根据实施例1的制造方法,即使在Ti层14形成之后不对半导体基板进行退火,Ti层14和GaN层10也被欧姆接触。因此,与现有技术相比,能够以更高的制造效率来制造半导体装置。此外,根据实施例2的制造方法,能够制造出与实施例1相比具有接触电阻更低的电极的半导体装置。
此外,在上述的实施例1以及实施例2中,在步骤S6中,使Ti层14形成为厚于C层12。通过使Ti层14形成为厚于C层12,从而能够使C层12的整体发生反应,进而在GaN层10和Ti层14之间的整体上形成Ti(C,N)层16。即,防止了在GaN层10和Ti层14之间残存C层12的情况。由此,能够进一步降低Ti层14的接触电阻。
另外,虽然在上述的实施例1以及实施例2中,通过阴极真空喷镀而形成了C层12,但也可以通过蒸镀等而形成C层12。此外,虽然在实施例1以及实施例2中,通过阴极真空喷镀而形成了Ti层14,但还可以通过蒸镀等而形成Ti层14。在实施例1以及实施例2中,在通过蒸镀而形成Ti层14的情况下,也能够得到较低的接触电阻。
此外,虽然在上述的实施例1以及实施例2中,Ti层14露出于最外层的表面,但也可以在Ti层14上形成其他的金属层(例如,Al、Ni以及Au等),从而使电极成为多层结构。
此外,实施例1以及实施例2的制造方法能够被应用于各种半导体装置的制造中。例如,能够被应用于LED、或GaN类功率器件(二极管、晶体管等)的制造中。
Claims (3)
1.一种半导体装置的制造方法,具有:
含碳层形成工序,在氮化物半导体层上形成含有碳的含碳层;
含钛层形成工序,在含碳层上形成含有钛的含钛层。
2.如权利要求1所述的制造方法,其中,
在含钛层形成工序之后,还具有对半导体基板进行加热的退火工序。
3.一种半导体装置,具有:
氮化物半导体层;
无限固溶体层,其被形成在氮化物半导体层上,并由碳化钛和氮化钛的无限固溶体构成;
含钛层,其被形成在无限固溶体层上,并含有钛。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009229381A JP5375497B2 (ja) | 2009-10-01 | 2009-10-01 | 半導体装置、及び、半導体装置の製造方法 |
JP2009-229381 | 2009-10-01 | ||
PCT/JP2010/065013 WO2011040172A1 (ja) | 2009-10-01 | 2010-09-02 | 半導体装置、及び、半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102668040A true CN102668040A (zh) | 2012-09-12 |
CN102668040B CN102668040B (zh) | 2015-01-28 |
Family
ID=43826000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080042659.3A Expired - Fee Related CN102668040B (zh) | 2009-10-01 | 2010-09-02 | 半导体装置以及半导体装置的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8633101B2 (zh) |
EP (1) | EP2485250B1 (zh) |
JP (1) | JP5375497B2 (zh) |
CN (1) | CN102668040B (zh) |
WO (1) | WO2011040172A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019127849A1 (zh) * | 2017-12-28 | 2019-07-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230246088A1 (en) * | 2022-02-01 | 2023-08-03 | Stmicroelectronics S.R.L. | Manufacturing process of an ohmic contact of a hemt device and hemt device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1216635A (zh) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | 碳化硅上的锇整流肖特基和欧姆连接以及W/WC/TiC欧姆接触 |
US5965911A (en) * | 1995-03-30 | 1999-10-12 | Samsung Electronics Co., Ltd. | Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof |
EP1035564A2 (en) * | 1999-01-13 | 2000-09-13 | Lucent Technologies Inc. | Diffusion barrier for high dielectric constant materials |
CN1614776A (zh) * | 2003-11-04 | 2005-05-11 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
JP2008235405A (ja) * | 2007-03-19 | 2008-10-02 | Denso Corp | 半導体装置 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3174135B2 (ja) * | 1992-05-07 | 2001-06-11 | シャープ株式会社 | 化合物半導体装置 |
JP3171677B2 (ja) * | 1992-07-24 | 2001-05-28 | シャープ株式会社 | オーミック電極 |
JPH09266351A (ja) | 1996-03-28 | 1997-10-07 | Fuji Photo Film Co Ltd | AlInGaN系半導体発光素子 |
US6072818A (en) | 1996-03-28 | 2000-06-06 | Fuji Photo Film Co., Ltd. | Semiconductor light emission device |
JP2000315817A (ja) * | 1999-04-28 | 2000-11-14 | Matsushita Electronics Industry Corp | 半導体装置 |
JP4514252B2 (ja) * | 1999-07-29 | 2010-07-28 | 古河電気工業株式会社 | GaN系半導体装置の製造方法 |
US6436819B1 (en) * | 2000-02-01 | 2002-08-20 | Applied Materials, Inc. | Nitrogen treatment of a metal nitride/metal stack |
JP3408527B2 (ja) * | 2000-10-26 | 2003-05-19 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6853076B2 (en) * | 2001-09-21 | 2005-02-08 | Intel Corporation | Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same |
EP2848712B1 (en) * | 2002-08-08 | 2018-05-30 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Process for producing alumina coating composed mainly of alpha-type crystal structure, alumina coating composed mainly of alpha-type crystal structure, laminate coating including the alumina coating , member clad with the alumina coating or laminate coating, process for producing the member, and physical vapor deposition apparatus |
US7144768B2 (en) * | 2003-06-12 | 2006-12-05 | Juyong Chung | Fabrication of titanium and titanium alloy anode for dielectric and insulated films |
US7230292B2 (en) * | 2003-08-05 | 2007-06-12 | Micron Technology, Inc. | Stud electrode and process for making same |
JP4841844B2 (ja) | 2005-01-05 | 2011-12-21 | 三菱電機株式会社 | 半導体素子 |
US7316962B2 (en) * | 2005-01-07 | 2008-01-08 | Infineon Technologies Ag | High dielectric constant materials |
KR100878433B1 (ko) * | 2005-05-18 | 2009-01-13 | 삼성전기주식회사 | 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법 |
JP2007005764A (ja) | 2005-05-27 | 2007-01-11 | Toyota Motor Corp | 半導体装置とその製造方法 |
US7972910B2 (en) * | 2005-06-03 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of integrated circuit device including thin film transistor |
KR100753152B1 (ko) * | 2005-08-12 | 2007-08-30 | 삼성전자주식회사 | 질화물계 발광소자 및 그 제조방법 |
US7795050B2 (en) * | 2005-08-12 | 2010-09-14 | Samsung Electronics Co., Ltd. | Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same |
JP4991134B2 (ja) * | 2005-09-15 | 2012-08-01 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN102130234A (zh) * | 2005-10-29 | 2011-07-20 | 三星电子株式会社 | 半导体器件的制造方法 |
US7851915B2 (en) * | 2007-04-30 | 2010-12-14 | Stmicroelectronics S.A. | Electronic component comprising a titanium carbonitride (TiCN) barrier layer and process of making the same |
JP2010021490A (ja) * | 2008-07-14 | 2010-01-28 | Kobe Steel Ltd | 半導体配線 |
US7846841B2 (en) * | 2008-09-30 | 2010-12-07 | Tokyo Electron Limited | Method for forming cobalt nitride cap layers |
JP4415100B1 (ja) * | 2008-12-19 | 2010-02-17 | 国立大学法人東北大学 | 銅配線、半導体装置および銅配線形成方法 |
KR101094375B1 (ko) * | 2009-11-30 | 2011-12-15 | 주식회사 하이닉스반도체 | 탄소함유 전극을 갖는 반도체 장치 및 그 제조 방법 |
KR101094386B1 (ko) * | 2009-11-30 | 2011-12-15 | 주식회사 하이닉스반도체 | 반도체 장치의 전극 및 캐패시터 제조 방법 |
-
2009
- 2009-10-01 JP JP2009229381A patent/JP5375497B2/ja not_active Expired - Fee Related
-
2010
- 2010-09-02 US US13/499,652 patent/US8633101B2/en active Active
- 2010-09-02 CN CN201080042659.3A patent/CN102668040B/zh not_active Expired - Fee Related
- 2010-09-02 EP EP10820292.0A patent/EP2485250B1/en not_active Not-in-force
- 2010-09-02 WO PCT/JP2010/065013 patent/WO2011040172A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5965911A (en) * | 1995-03-30 | 1999-10-12 | Samsung Electronics Co., Ltd. | Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof |
CN1216635A (zh) * | 1996-03-07 | 1999-05-12 | 3C半导体公司 | 碳化硅上的锇整流肖特基和欧姆连接以及W/WC/TiC欧姆接触 |
EP1035564A2 (en) * | 1999-01-13 | 2000-09-13 | Lucent Technologies Inc. | Diffusion barrier for high dielectric constant materials |
CN1614776A (zh) * | 2003-11-04 | 2005-05-11 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
JP2008235405A (ja) * | 2007-03-19 | 2008-10-02 | Denso Corp | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019127849A1 (zh) * | 2017-12-28 | 2019-07-04 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
CN109979802A (zh) * | 2017-12-28 | 2019-07-05 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
CN109979802B (zh) * | 2017-12-28 | 2020-12-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | 高功函数可调的过渡金属氮化物材料、其制备方法及应用 |
Also Published As
Publication number | Publication date |
---|---|
WO2011040172A1 (ja) | 2011-04-07 |
EP2485250A1 (en) | 2012-08-08 |
US8633101B2 (en) | 2014-01-21 |
US20120217639A1 (en) | 2012-08-30 |
EP2485250B1 (en) | 2014-07-16 |
CN102668040B (zh) | 2015-01-28 |
EP2485250A4 (en) | 2013-08-21 |
JP2011077428A (ja) | 2011-04-14 |
JP5375497B2 (ja) | 2013-12-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20170200610A1 (en) | PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC | |
TW451504B (en) | Compound semiconductor device and method for making the same | |
JP5286677B2 (ja) | P型4H−SiC基板上のオーミック電極の形成方法 | |
JP5449786B2 (ja) | 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法 | |
US9129804B2 (en) | Silicon carbide semiconductor device and method for manufacturing same | |
CN101369599B (zh) | 氮化镓基器件的欧姆接触及其制备方法 | |
TW201104862A (en) | Semiconductor device and method of producing same | |
CN103548119A (zh) | SiC半导体器件及其制造方法 | |
EP2518758A1 (en) | N-type contact electrode comprising a group iii nitride semiconductor, and method for forming same | |
CN101303978A (zh) | 适用于氮化镓器件n型欧姆接触的制作方法 | |
WO2008053627A1 (en) | OHMIC ELECTRODE FOR SiC SEMICONDUCTOR, METHOD FOR MANUFACTURE OF OHMIC ELECTRODE FOR SiC SEMICONDUCTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE | |
CN101009221A (zh) | 半导体装置的制造方法 | |
JP5369581B2 (ja) | 半導体デバイス用裏面電極、半導体デバイスおよび半導体デバイス用裏面電極の製造方法 | |
WO2008023687A1 (fr) | DISPOSITIF SEMI-CONDUCTEUR AU SiC ET SON PROCÉDÉ DE FABRICATION | |
JP2008147294A (ja) | 電子デバイス | |
JP6060476B2 (ja) | 電極形成方法 | |
JP2009049130A (ja) | 炭化珪素半導体装置、その製造方法および炭化珪素デバイス | |
CN102668040A (zh) | 半导体装置以及半导体装置的制造方法 | |
JP5052169B2 (ja) | 炭化珪素半導体装置の製造方法 | |
JP2006032456A (ja) | 半導体素子および半導体素子の製造方法 | |
US20060267128A1 (en) | Schottky barrier diode and method of producing the same | |
CN100544024C (zh) | 氮化物半导体器件的肖特基电极及其制作方法 | |
CN102496567B (zh) | 一种iii-v族半导体镍金属化制造方法 | |
CN102931224A (zh) | 用于P-SiC欧姆接触的界面过渡层复合结构及其制备方法 | |
TW201137975A (en) | Silicon carbide semiconductor device and its manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201015 Address after: Aichi Prefecture, Japan Patentee after: DENSO Corp. Address before: Aichi Prefecture, Japan Patentee before: Toyota Motor Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150128 |