JP2009049130A - 炭化珪素半導体装置、その製造方法および炭化珪素デバイス - Google Patents
炭化珪素半導体装置、その製造方法および炭化珪素デバイス Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 97
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 131
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 65
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 59
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 56
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 55
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims abstract description 39
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910021334 nickel silicide Inorganic materials 0.000 claims abstract description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 43
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 239000012298 atmosphere Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000004020 conductor Substances 0.000 abstract description 14
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 19
- 229910052799 carbon Inorganic materials 0.000 description 19
- 239000002344 surface layer Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000921 elemental analysis Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 210000000746 body region Anatomy 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】n型炭化珪素基板またはn型炭化珪素領域1の表面に、ニッケル膜2と、酸化ニッケル膜3と、をこの順に積層し、酸化しない状態で熱処理をおこなう。熱処理をおこなうことで、ニッケル膜2の一部がニッケルシリサイド膜4となる。つぎに、酸化ニッケル膜3を塩酸溶液で除去し、ニッケルシリサイド膜4の表面にニッケルアルミ膜5と、アルミニウム膜6と、をこの順に積層する。
【選択図】図1
Description
図1は、本実施の形態にかかる炭化珪素半導体装置の構造を示す断面図である。図1に示すように、本実施の形態にかかる炭化珪素半導体装置は、n型SiC領域1に、ニッケルシリサイド(Ni2Si)膜4と、ニッケルアルミ(NiAl)膜5と、アルミニウム(Al)膜6と、がこの順に積層された構造となっている。
2 ニッケル膜
3 酸化ニッケル膜
4 ニッケルシリサイド膜
5 ニッケルアルミ膜
6 アルミニウム膜
Claims (10)
- n型炭化珪素基板、または、炭化珪素基板の表面に形成されたn型炭化珪素領域の表面に、ニッケル膜を形成するニッケル膜形成工程と、
前記ニッケル膜形成工程によって形成されたニッケル膜の表面に、酸化ニッケル膜を形成する酸化ニッケル膜形成工程と、
非酸化性雰囲気中で熱処理をおこなう熱処理工程と、
を含むことを特徴とする炭化珪素半導体装置の製造方法。 - 前記非酸化性雰囲気は、真空もしくはアルゴン雰囲気とすることを特徴とする請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記熱処理工程は、前記ニッケル膜の一部にニッケルシリサイド膜を形成することを特徴とする請求項1または2に記載の炭化珪素半導体装置の製造方法。
- 前記熱処理工程の後に、
前記酸化ニッケル膜を、塩酸溶液によって除去する酸化ニッケル膜除去工程と、
前記酸化ニッケル膜除去工程によって酸化ニッケル膜の除去された前記ニッケルシリサイド膜の表面に、アルミニウム膜を形成するアルミニウム膜形成工程と、
を含むことを特徴とする請求項3に記載の炭化珪素半導体装置の製造方法。 - 前記酸化ニッケル膜除去工程と、前記アルミニウム膜形成工程との間に、
前記ニッケルシリサイド膜の表面に、ニッケルアルミ膜を形成するニッケルアルミ膜形成工程を含み、
前記アルミニウム膜形成工程は、前記ニッケルアルミ膜形成工程によって形成されたニッケルアルミ膜の表面に、前記アルミニウム膜を形成することを特徴とする請求項4に記載の炭化珪素半導体装置の製造方法。 - 前記ニッケル膜形成工程は、ニッケル膜を0.05μm以上0.2μm以下の厚さで形成し、
前記酸化ニッケル膜形成工程は、酸化ニッケル膜を0.05μm以上0.15μm以下の厚さで形成することを特徴とする請求項1〜5のいずれか一つに記載の炭化珪素半導体装置の製造方法。 - 前記ニッケルアルミ膜形成工程は、前記ニッケルアルミ膜を5nm以上20nm以下の厚さで形成し、
前記アルミニウム膜形成工程は、前記アルミニウム膜を2μm以上4μm以下の厚さで形成することを特徴とする請求項5に記載の炭化珪素半導体装置の製造方法。 - 前記ニッケルアルミ膜形成工程は、ニッケルの含有率が40at%以上60at%以下で、残りがアルミニウムのニッケルアルミターゲットを用いたスパッタ法によって前記ニッケルアルミ膜を形成することを特徴とする請求項5または7に記載の炭化珪素半導体装置の製造方法。
- n型炭化珪素基板、または、炭化珪素基板の表面に設けられたn型炭化珪素領域と、
前記n型炭化珪素基板または前記n型炭化珪素領域の表面に設けられたニッケル膜と、
前記ニッケル膜の表面に設けられたニッケルアルミ膜と、
前記ニッケルアルミ膜の表面に設けられたアルミニウム膜と、
を備えることを特徴とする炭化珪素半導体装置。 - 請求項9に記載の炭化珪素半導体装置を有し、前記ニッケル膜がオーミック電極であることを特徴とする炭化珪素デバイス。
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JP2007212919A JP5282382B2 (ja) | 2007-08-17 | 2007-08-17 | 炭化珪素半導体装置、その製造方法および炭化珪素デバイス |
US12/193,291 US8114783B2 (en) | 2007-08-17 | 2008-08-18 | Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device |
US13/346,864 US9117681B2 (en) | 2007-08-17 | 2012-01-10 | Silicon carbide semiconductor element, method of manufacturing the same, and silicon carbide device |
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JP2007212919A JP5282382B2 (ja) | 2007-08-17 | 2007-08-17 | 炭化珪素半導体装置、その製造方法および炭化珪素デバイス |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103140916A (zh) * | 2011-04-11 | 2013-06-05 | 新电元工业株式会社 | 碳化硅半导体装置的制造方法 |
JP2018049927A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
Families Citing this family (6)
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US9892813B1 (en) * | 2012-04-19 | 2018-02-13 | Thomas A. Barkow | Graphene/metal molecular level lamination (GMMLL) |
DE102012213077A1 (de) * | 2012-07-25 | 2014-01-30 | Robert Bosch Gmbh | Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage |
US10403509B2 (en) * | 2014-04-04 | 2019-09-03 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Basal plane dislocation elimination in 4H—SiC by pulsed rapid thermal annealing |
JP6350106B2 (ja) * | 2014-08-20 | 2018-07-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
US10418553B1 (en) * | 2018-03-28 | 2019-09-17 | Arm Ltd. | Formation of correlated electron material (CEM) device via dopant deposition and anneal |
CN111276395A (zh) * | 2020-02-19 | 2020-06-12 | 华芯威半导体科技(北京)有限责任公司 | 一种碳化硅器件原料的制造方法及使用该原料制备的碳化硅器件 |
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2007
- 2007-08-17 JP JP2007212919A patent/JP5282382B2/ja not_active Expired - Fee Related
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2008
- 2008-08-18 US US12/193,291 patent/US8114783B2/en not_active Expired - Fee Related
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2012
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JP2007184571A (ja) * | 2005-12-08 | 2007-07-19 | Nissan Motor Co Ltd | 炭化珪素半導体装置、炭化珪素半導体装置の製造方法、炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体及び炭化珪素半導体装置中の遷移金属シリサイドと金属膜との接合体の製造方法 |
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CN103140916A (zh) * | 2011-04-11 | 2013-06-05 | 新电元工业株式会社 | 碳化硅半导体装置的制造方法 |
US9224645B2 (en) | 2011-04-11 | 2015-12-29 | Shindengen Electric Manufacturing Co., Ltd. | Silicon carbide semiconductor device and method for manufacturing the same |
JP2018049927A (ja) * | 2016-09-21 | 2018-03-29 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
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US9117681B2 (en) | 2015-08-25 |
US20090045414A1 (en) | 2009-02-19 |
US8114783B2 (en) | 2012-02-14 |
JP5282382B2 (ja) | 2013-09-04 |
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