CN102655089A - 一种低温多晶硅薄膜的制作方法 - Google Patents
一种低温多晶硅薄膜的制作方法 Download PDFInfo
- Publication number
- CN102655089A CN102655089A CN2011103700149A CN201110370014A CN102655089A CN 102655089 A CN102655089 A CN 102655089A CN 2011103700149 A CN2011103700149 A CN 2011103700149A CN 201110370014 A CN201110370014 A CN 201110370014A CN 102655089 A CN102655089 A CN 102655089A
- Authority
- CN
- China
- Prior art keywords
- layer
- temperature
- low
- carried out
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000010409 thin film Substances 0.000 title abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005224 laser annealing Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 9
- 229920005591 polysilicon Polymers 0.000 claims description 72
- 239000012528 membrane Substances 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 235000013842 nitrous oxide Nutrition 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- HGCGQDMQKGRJNO-UHFFFAOYSA-N xenon monochloride Chemical compound [Xe]Cl HGCGQDMQKGRJNO-UHFFFAOYSA-N 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 2
- 230000003139 buffering effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
本发明实施例提供的一种低温多晶硅薄膜的制作方法,涉及液晶面板制造领域,用以减小了多晶硅薄膜在使用过程中产生的漏电流,从而提高产品质量。该低温多晶硅薄膜的制作方法包括:在基板上依次沉积缓冲层和非晶硅层;对所述非晶硅层进行高温加热,并对非晶硅层进行准分子激光退火,形成多晶硅层;在高温下对所述多晶硅层进行氧化;对所述氧化后的多晶硅层进行刻蚀,以形成多晶硅薄膜。本发明实施例用于薄膜晶体管的制造。
Description
技术领域
本发明涉及液晶面板制造领域,尤其涉及一种低温多晶硅薄膜的制作方法。
背景技术
在显示器的制造过程中,阵列基板中薄膜晶体管有源层的多晶硅薄膜的形成需要在高温下进行,由于一般基板衬底的耐热度很低,如果直接在高温下制作多晶硅薄膜,将会造成基板变形。因此,在制作薄膜晶体管有源层时通常采用低温多晶硅薄膜(Low TemperaturePolysilicon Thin Film)。
准分子激光退火(Excimer Laser Annealing,可缩写为ELA)方法是目前制作低温多晶硅薄膜达到量产的主要方法,其利用高能量的准分子激光照射非晶硅薄膜,使非晶硅薄膜吸收准分子激光的能量后,使该非晶硅薄膜呈融化状态,待冷却后结晶成多晶硅薄膜,整个过程是在500℃~600℃下完成。该方法是采用准分子激光发生器的脉冲激光,在非晶硅层上进行扫描形成一照射区域,该脉冲激光扫描完后向前移动一段距离,使形成的多个照射区域相互重叠,由于重叠部分温度较未重叠部分温度高,在重叠部分与未重叠部分的界面发生非均匀成核,通常重叠部分与其他未重叠部分产生的横向温度梯度,晶核将沿温度较高的方向即从未重叠部分至重叠部分的方向长大,并最终结晶成低温多晶硅薄膜。
具体的,如图1所示,基板101上形成有缓冲层106,并在该缓冲层106上形成有非晶硅层,采用ELA后,该非晶硅层晶化为多晶硅层105,但是发明人发现,由于ELA过程复杂,非晶硅层无法完全结晶为多晶硅层,以至于形成的多晶硅层105表面不平整,具有很多突起104,这样就使得薄膜晶体管在施加电压时,多晶硅薄膜表面的突起处会造成尖端放电现象,从而产生较大的漏电流,并且也会由于多晶硅薄膜表面粗糙,造成较大的电阻,使多晶硅薄膜的迁移率及阈值电压不均匀,影响产品质量。
发明内容
本发明的实施例提供一种低温多晶硅薄膜的制作方法,具有平整的多晶硅薄膜表面,从而减小了多晶硅薄膜在使用过程中产生的漏电流,提高了产品质量。
为达到上述目的,本发明的实施例采用如下技术方案:
一方面,提供一种低温多晶硅薄膜的制作方法,包括:
在基板上依次沉积缓冲层和非晶硅层;
对所述非晶硅层进行高温加热,并对非晶硅层进行准分子激光退火,形成多晶硅层;
在高温下对所述多晶硅层进行氧化;
对所述氧化后的多晶硅层进行刻蚀,以形成多晶硅薄膜。
本发明实施例提供的一种低温多晶硅薄膜的制作方法,由于对采用准分子激光退火后形成的多晶硅层,在高温下进行氧化,并进行刻蚀,从而形成了表面平整的多晶硅薄膜,这样一来,减小了多晶硅薄膜在使用过程中产生的漏电流,进而提高了产品质量。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为现有技术制作的低温多晶硅薄膜结构示意图;
图2为本发明实施例提供的一种低温多晶硅薄膜制作方法的示意图;
图3为本发明实施例提供的一种低温多晶硅薄膜的结构示意图;
图4为本发明实施例提供的另一种低温多晶硅薄膜的结构示意图。
附图标记:101-基板,104-突起,105-多晶硅层,106-缓冲层;
301-基板,302-氮化硅层,303-二氧化硅层,304-突起,305-多晶硅层,306-缓冲层,307-非晶硅层。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明实施例提供的一种低温多晶硅薄膜的制作方法,如图2所示,包括:
S201、在基板上依次沉积缓冲层和非晶硅层。
具体的,如图3所示,在清洗后的基板衬底301上沉积缓冲层306,该缓冲层是包括氮化硅(SiNx)层302和二氧化硅(SiO2)层303的双层结构,该缓冲层306用于防止该基板衬底301内杂质在后续工艺中向上扩散而影响之后形成的低温多晶硅薄膜的质量,其中,先沉积氮化硅层302的厚度为50~150nm,之后沉积的二氧化硅层303的厚度为100~350nm,该缓冲层306和非晶硅层307可以采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,可以简写为PECVD)方法,还可以采用溅射、真空蒸镀和低压化学气相沉积等方法。
S202、对该非晶硅层进行高温加热,并对非晶硅层进行准分子激光退火,形成多晶硅层。
具体的,在400~500℃的温度下对该非晶硅层进行0.5~3小时的高温加热,并对高温加热后的非晶硅层进行准分子激光退火。该准分子激光退火具体是采用氯化氙(Xecl)准分子激光器(波长308nm),使非晶硅层结晶成多晶硅层,其中,激光脉冲频率为300Hz,重叠率为92%~98%,激光能量密度为300~500mJ/cm2。
需要说明的是,本发明施例中采用氯化氙准分子激光器使非晶硅层结晶成多晶硅层,除此之外还可以采用氟化氪(KrF)、氟化氩(ArF)等准分子激光器。
由于经过准分子激光退火后形成的多晶硅层,其表面具有很多突起,该突起的主要成分是未晶化的非晶硅,所以本发明实施例还需要对该多晶硅层进行后续处理,具体如下:
S203、在高温下对该多晶硅层进行氧化。
具体的,将经过准分子激光退火后形成的多晶硅层,放置在温度为700℃的氧气气氛下的快速热退火装置中进行快速热退火,这样就使得未晶化的非晶硅氧化成二氧化硅。
作为本发明另一实施方式,将未晶化的非晶硅氧化成二氧化硅的方法还可以是在笑气等离子体(N2O plasma)气氛下对多晶硅层进行氧化,具体过程是在PECVD气相沉积设备中进行。其中,PECVD气相沉积设备内温度大于400℃,反应气体流量N2O=1000~2000sccm,射频功率为700W,沉积腔内压强为1500~3000mtorr,氧化的时间为2~7分钟。
S204、对该氧化后的多晶硅层进行刻蚀,以形成多晶硅薄膜。
具体的,该方法是采用1%~10%氢氟酸溶液对氧化后的多晶硅层进行刻蚀,由于二氧化硅与氢氟酸发生化学反应,化学方程式为SiO2+4HF=SiF4↑+2H2O,所以多晶硅层上的二氧化硅就会与多晶硅层脱离,从而形成表面平整的多晶硅薄膜,如图4所示。与现有技术相比,避免了因为突起所引起的尖端放电现象,进而避免了漏电流的产生。
本发明实施例提供的一种低温多晶硅薄膜的制作方法,由于对采用准分子激光退火后形成的多晶硅层,在高温下进行氧化,并进行刻蚀,从而形成了表面平整的多晶硅薄膜,这样一来,减小了多晶硅薄膜在使用过程中产生的漏电流,进而提高了产品质量。
以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应以所述权利要求的保护范围为准。
Claims (9)
1.一种低温多晶硅薄膜的制作方法,其特征在于,包括:
在基板上依次沉积缓冲层和非晶硅层;
对所述非晶硅层进行高温加热,并对非晶硅层进行准分子激光退火,形成多晶硅层;
在高温下对所述多晶硅层进行氧化;
对所述氧化后的多晶硅层进行刻蚀,以形成多晶硅薄膜。
2.根据权利要求1所述的低温多晶硅薄膜的制作方法,其特征在于,在基板上沉积的缓冲层包含氮化硅层和二氧化硅层,其中,先沉积的所述氮化硅层厚度为50~150nm,之后沉积的所述二氧化硅层厚度为100~350nm。
3.根据权利要求1所述的低温多晶硅薄膜的制作方法,其特征在于,所述非晶硅层的厚度为30~100nm。
4.根据权利要求1所述的低温多晶硅薄膜的制作方法,其特征在于,在400~500℃的温度下对所述非晶硅层进行0.5~3小时的高温加热。
5.根据权利要求1所述的低温多晶硅薄膜的制作方法,其特征在于,对所述高温加热后的非晶硅层进行的准分子激光退火,具体为:
采用氯化氙准分子激光器对非晶硅进行准分子激光退火,其中,激光脉冲频率为300Hz,重叠率为92%~98%,激光能量密度为300~500mJ/cm2。
6.根据权利要求1所述的低温多晶硅薄膜的制作方法,其特征在于,在高温下采用氧气或笑气等离子体对所述多晶硅层进行氧化。
7.根据权利要求6所述的低温多晶硅薄膜的制作方法,其特征在于,在温度为700℃氧气气氛下对所述多晶硅层进行氧化。
8.根据权利要求6所述的低温多晶硅薄膜的制作方法,其特征在于,在高温下采用笑气等离子体对多晶硅层进行氧化,具体为,在温度大于400℃,反应气体流量为N2O=1000~2000sccm,射频功率为700W,沉积腔内压强为1500~3000mtorr的气氛下对多晶硅层进行氧化,并且氧化的时间为2~7分钟。
9.根据权利要求1所述的低温多晶硅薄膜的制作方法,其特征在于,对所述氧化后的多晶硅层进行刻蚀,以形成多晶硅薄膜,具体为:
采用浓度为1%~10%的氢氟酸溶液对所述氧化后的多晶硅层进行刻蚀,以形成多晶硅薄膜。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110370014.9A CN102655089B (zh) | 2011-11-18 | 2011-11-18 | 一种低温多晶硅薄膜的制作方法 |
US13/703,122 US9633844B2 (en) | 2011-11-18 | 2012-10-22 | Method for forming low temperature polysilicon thin film |
PCT/CN2012/083331 WO2013071811A1 (zh) | 2011-11-18 | 2012-10-22 | 低温多晶硅薄膜的形成方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110370014.9A CN102655089B (zh) | 2011-11-18 | 2011-11-18 | 一种低温多晶硅薄膜的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102655089A true CN102655089A (zh) | 2012-09-05 |
CN102655089B CN102655089B (zh) | 2015-08-12 |
Family
ID=46730696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110370014.9A Expired - Fee Related CN102655089B (zh) | 2011-11-18 | 2011-11-18 | 一种低温多晶硅薄膜的制作方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9633844B2 (zh) |
CN (1) | CN102655089B (zh) |
WO (1) | WO2013071811A1 (zh) |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013071811A1 (zh) * | 2011-11-18 | 2013-05-23 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的形成方法 |
US20140138695A1 (en) * | 2012-11-22 | 2014-05-22 | Boe Technology Group Co., Ltd. | Low temperature polycrystalline silicon thin film and method of producing the same, array substrate and display apparatus |
CN103901729A (zh) * | 2012-12-24 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | 改善套刻精度面内均匀性的方法 |
EP2741314A3 (en) * | 2012-12-06 | 2014-07-23 | Samsung Display Co., Ltd. | Method of manufacturing a poly-crystalline silicon layer, method of manufacturing an organic light-emitting display apparatus including the same, and organic light-emitting display apparatus manufactured by using the same |
CN104253246A (zh) * | 2014-09-23 | 2014-12-31 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制作方法、低温多晶硅薄膜及相关器件 |
WO2015070465A1 (zh) * | 2013-11-13 | 2015-05-21 | 深圳市华星光电技术有限公司 | 可控制多晶硅生长方向的多晶硅制作方法 |
US9082615B2 (en) | 2013-11-13 | 2015-07-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Polysilicon manufacturing method that controls growth direction of polysilicon |
CN105206569A (zh) * | 2015-10-23 | 2015-12-30 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
CN105489487A (zh) * | 2016-01-14 | 2016-04-13 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜及晶体管的制备方法、激光晶化装置 |
WO2016155149A1 (zh) * | 2015-03-27 | 2016-10-06 | 京东方科技集团股份有限公司 | 多晶硅薄膜制备方法、半导体器件、显示基板及显示装置 |
WO2017041339A1 (zh) * | 2015-09-10 | 2017-03-16 | 深圳市华星光电技术有限公司 | 基板制备方法 |
CN106744659A (zh) * | 2016-12-13 | 2017-05-31 | 杭州电子科技大学 | 基于激光控制纳米结构硅基表面形态的研究方法 |
CN106783582A (zh) * | 2016-12-22 | 2017-05-31 | 武汉华星光电技术有限公司 | 多晶硅薄膜处理方法、薄膜晶体管、阵列基板及显示面板 |
CN109830428A (zh) * | 2019-01-21 | 2019-05-31 | 武汉华星光电半导体显示技术有限公司 | 一种半导体器件的制备方法 |
CN111223754A (zh) * | 2018-11-23 | 2020-06-02 | 陕西坤同半导体科技有限公司 | 一种多晶硅薄膜及其制备方法 |
CN112397382A (zh) * | 2020-11-17 | 2021-02-23 | 云谷(固安)科技有限公司 | 一种多晶硅薄膜的处理方法 |
CN113192844A (zh) * | 2021-04-09 | 2021-07-30 | 电子科技大学 | 一种基于co2激光退火工艺的氧化物薄膜晶化方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104658891B (zh) * | 2015-03-03 | 2019-03-15 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制备方法、薄膜晶体管及显示装置 |
KR102362065B1 (ko) | 2015-05-27 | 2022-02-14 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US10679851B2 (en) * | 2018-07-25 | 2020-06-09 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Poly-silicon thin film and preparation method of thin film transistor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167758A (ja) * | 1997-08-19 | 1999-03-09 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体膜の成形方法及び半導体基板の製造方法 |
CN1292040A (zh) * | 1998-03-03 | 2001-04-18 | 小松应用技术公司 | 涂覆和退火大面积玻璃基底的方法 |
CN1395287A (zh) * | 2001-06-29 | 2003-02-05 | 三洋电机株式会社 | 半导体膜、半导体膜的形成方法、及半导体装置的制造方法 |
US6677222B1 (en) * | 1999-08-19 | 2004-01-13 | Fujitsu Limited | Method of manufacturing semiconductor device with polysilicon film |
CN1635610A (zh) * | 2003-12-29 | 2005-07-06 | 统宝光电股份有限公司 | 低温多晶硅薄膜的制造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1375113A (zh) * | 1999-09-16 | 2002-10-16 | 松下电器产业株式会社 | 薄膜晶体管及其制造方法 |
US6482682B2 (en) * | 2001-02-20 | 2002-11-19 | Industrial Technology Research Institute | Manufacturing method for improving reliability of polysilicon thin film transistors |
US7061959B2 (en) * | 2001-04-18 | 2006-06-13 | Tcz Gmbh | Laser thin film poly-silicon annealing system |
TW594866B (en) * | 2001-08-29 | 2004-06-21 | Ind Tech Res Inst | Method of forming low-temperature polysilicon |
JP4302347B2 (ja) * | 2001-12-18 | 2009-07-22 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法 |
KR100487256B1 (ko) * | 2002-10-31 | 2005-05-03 | 엘지.필립스 엘시디 주식회사 | 폴리 실리콘 박막 트랜지스터 제조방법 |
US20040140469A1 (en) * | 2003-01-17 | 2004-07-22 | Tsung-Neng Liao | Panel of a flat display and method of fabricating the panel |
US20060043072A1 (en) * | 2003-02-05 | 2006-03-02 | Industrial Technology Research Institute | Method for planarizing polysilicon |
TWI227565B (en) * | 2003-04-16 | 2005-02-01 | Au Optronics Corp | Low temperature poly-Si thin film transistor and method of manufacturing the same |
JP2005260040A (ja) * | 2004-02-12 | 2005-09-22 | Sony Corp | ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法 |
JP4441299B2 (ja) * | 2004-03-25 | 2010-03-31 | 株式会社 日立ディスプレイズ | 表示装置の製造方法 |
KR100635567B1 (ko) * | 2004-06-29 | 2006-10-17 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
TW200610059A (en) * | 2004-09-01 | 2006-03-16 | Au Optronics Corp | Semiconductor device and method of fabricating an LTPS layer |
US7026226B1 (en) * | 2004-11-02 | 2006-04-11 | Toppoly Optoelectronics Corp. | Method of hydrogenating a poly-silicon layer |
TWI247432B (en) * | 2004-12-03 | 2006-01-11 | Chunghwa Picture Tubes Ltd | Manufacturing method of thin film transistor and poly-silicon layer |
JP2007294849A (ja) * | 2006-03-27 | 2007-11-08 | Seiko Epson Corp | 半導体素子、半導体装置およびそれらの製造方法 |
US7659158B2 (en) * | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
KR101709749B1 (ko) * | 2009-09-16 | 2017-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 구동 방법 및 표시 장치 |
CN102655089B (zh) * | 2011-11-18 | 2015-08-12 | 京东方科技集团股份有限公司 | 一种低温多晶硅薄膜的制作方法 |
US20140000686A1 (en) * | 2012-06-29 | 2014-01-02 | Applied Materials, Inc. | Film stack and process design for back passivated solar cells and laser opening of contact |
-
2011
- 2011-11-18 CN CN201110370014.9A patent/CN102655089B/zh not_active Expired - Fee Related
-
2012
- 2012-10-22 WO PCT/CN2012/083331 patent/WO2013071811A1/zh active Application Filing
- 2012-10-22 US US13/703,122 patent/US9633844B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1167758A (ja) * | 1997-08-19 | 1999-03-09 | Ishikawajima Harima Heavy Ind Co Ltd | 半導体膜の成形方法及び半導体基板の製造方法 |
CN1292040A (zh) * | 1998-03-03 | 2001-04-18 | 小松应用技术公司 | 涂覆和退火大面积玻璃基底的方法 |
US6677222B1 (en) * | 1999-08-19 | 2004-01-13 | Fujitsu Limited | Method of manufacturing semiconductor device with polysilicon film |
CN1395287A (zh) * | 2001-06-29 | 2003-02-05 | 三洋电机株式会社 | 半导体膜、半导体膜的形成方法、及半导体装置的制造方法 |
CN1635610A (zh) * | 2003-12-29 | 2005-07-06 | 统宝光电股份有限公司 | 低温多晶硅薄膜的制造方法 |
Cited By (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9633844B2 (en) | 2011-11-18 | 2017-04-25 | Boe Technology Group Co., Ltd. | Method for forming low temperature polysilicon thin film |
WO2013071811A1 (zh) * | 2011-11-18 | 2013-05-23 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的形成方法 |
US20140138695A1 (en) * | 2012-11-22 | 2014-05-22 | Boe Technology Group Co., Ltd. | Low temperature polycrystalline silicon thin film and method of producing the same, array substrate and display apparatus |
US9437417B2 (en) * | 2012-11-22 | 2016-09-06 | Boe Technology Group Co., Ltd. | Low temperature polycrystalline silicon thin film and method of producing the same, array substrate and display apparatus |
US9202828B2 (en) | 2012-12-06 | 2015-12-01 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus |
EP2741314A3 (en) * | 2012-12-06 | 2014-07-23 | Samsung Display Co., Ltd. | Method of manufacturing a poly-crystalline silicon layer, method of manufacturing an organic light-emitting display apparatus including the same, and organic light-emitting display apparatus manufactured by using the same |
US9012916B2 (en) | 2012-12-06 | 2015-04-21 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus |
US9685326B2 (en) | 2012-12-06 | 2017-06-20 | Samsung Display Co., Ltd. | Method of manufacturing a polysilicon (poly-Si) layer |
CN103901729B (zh) * | 2012-12-24 | 2015-12-23 | 上海华虹宏力半导体制造有限公司 | 改善套刻精度面内均匀性的方法 |
CN103901729A (zh) * | 2012-12-24 | 2014-07-02 | 上海华虹宏力半导体制造有限公司 | 改善套刻精度面内均匀性的方法 |
US9082615B2 (en) | 2013-11-13 | 2015-07-14 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Polysilicon manufacturing method that controls growth direction of polysilicon |
WO2015070465A1 (zh) * | 2013-11-13 | 2015-05-21 | 深圳市华星光电技术有限公司 | 可控制多晶硅生长方向的多晶硅制作方法 |
CN104253246A (zh) * | 2014-09-23 | 2014-12-31 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制作方法、低温多晶硅薄膜及相关器件 |
CN104253246B (zh) * | 2014-09-23 | 2016-08-17 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜的制作方法、低温多晶硅薄膜及相关器件 |
WO2016155149A1 (zh) * | 2015-03-27 | 2016-10-06 | 京东方科技集团股份有限公司 | 多晶硅薄膜制备方法、半导体器件、显示基板及显示装置 |
US10062566B2 (en) | 2015-03-27 | 2018-08-28 | Boe Technology Group Co., Ltd. | Semiconductor device, display substrate, display device, and method for manufacturing polysilicon film |
US10392297B2 (en) | 2015-09-10 | 2019-08-27 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Method for manufacturing substrate |
WO2017041339A1 (zh) * | 2015-09-10 | 2017-03-16 | 深圳市华星光电技术有限公司 | 基板制备方法 |
CN105206569A (zh) * | 2015-10-23 | 2015-12-30 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示面板、显示装置 |
CN105489487A (zh) * | 2016-01-14 | 2016-04-13 | 京东方科技集团股份有限公司 | 低温多晶硅薄膜及晶体管的制备方法、激光晶化装置 |
US10049873B2 (en) | 2016-01-14 | 2018-08-14 | Boe Technology Group Co., Ltd. | Preparation methods of low temperature poly-silicon thin film and transistor and laser crystallization apparatus |
CN106744659A (zh) * | 2016-12-13 | 2017-05-31 | 杭州电子科技大学 | 基于激光控制纳米结构硅基表面形态的研究方法 |
CN106783582A (zh) * | 2016-12-22 | 2017-05-31 | 武汉华星光电技术有限公司 | 多晶硅薄膜处理方法、薄膜晶体管、阵列基板及显示面板 |
CN106783582B (zh) * | 2016-12-22 | 2020-01-03 | 武汉华星光电技术有限公司 | 多晶硅薄膜处理方法、薄膜晶体管、阵列基板及显示面板 |
CN111223754A (zh) * | 2018-11-23 | 2020-06-02 | 陕西坤同半导体科技有限公司 | 一种多晶硅薄膜及其制备方法 |
CN109830428A (zh) * | 2019-01-21 | 2019-05-31 | 武汉华星光电半导体显示技术有限公司 | 一种半导体器件的制备方法 |
WO2020151132A1 (zh) * | 2019-01-21 | 2020-07-30 | 武汉华星光电半导体显示技术有限公司 | 一种半导体器件的制备方法及系统 |
US11087982B2 (en) | 2019-01-21 | 2021-08-10 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method and system for fabricating a semiconductor device |
CN112397382A (zh) * | 2020-11-17 | 2021-02-23 | 云谷(固安)科技有限公司 | 一种多晶硅薄膜的处理方法 |
CN113192844A (zh) * | 2021-04-09 | 2021-07-30 | 电子科技大学 | 一种基于co2激光退火工艺的氧化物薄膜晶化方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013071811A1 (zh) | 2013-05-23 |
CN102655089B (zh) | 2015-08-12 |
US9633844B2 (en) | 2017-04-25 |
US20140057419A1 (en) | 2014-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102655089B (zh) | 一种低温多晶硅薄膜的制作方法 | |
CN102651311B (zh) | 一种低温多晶硅薄膜的制备方法及低温多晶硅薄膜 | |
US8940625B2 (en) | Low temperature polysilicon thin film and manufacturing method thereof | |
CN101393920A (zh) | 半导体装置以及其制造方法 | |
CN101728312A (zh) | Soi衬底及其制造方法 | |
CN103972050A (zh) | 多晶硅薄膜、多晶硅薄膜晶体管及阵列基板的制备方法 | |
CN102891107B (zh) | 低温多晶硅基板及其制作方法 | |
US9818606B2 (en) | Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture | |
CN102945789A (zh) | 低温多晶硅薄膜制备方法、薄膜晶体管及其制备方法 | |
WO2014169601A1 (zh) | 低温多晶硅的制作方法、低温多晶硅薄膜和薄膜晶体管 | |
CN103839826A (zh) | 一种低温多晶硅薄膜晶体管、阵列基板及其制作方法 | |
JP2008124111A (ja) | プラズマcvd法によるシリコン系薄膜の形成方法 | |
JP2012119691A (ja) | 薄膜トランジスタの製造方法 | |
CN104966663A (zh) | 低温多晶硅薄膜及其制备方法、以及薄膜晶体管 | |
CN106783582A (zh) | 多晶硅薄膜处理方法、薄膜晶体管、阵列基板及显示面板 | |
CN105513950A (zh) | 低温多晶硅薄膜及薄膜晶体管的制备方法 | |
CN106847675A (zh) | 低温多晶硅薄膜及其制备方法、薄膜晶体管和显示面板 | |
CN203690350U (zh) | 一种激光退火设备 | |
JPH0878693A (ja) | 半導体装置の作製方法 | |
CN104851809A (zh) | 薄膜晶体管及其制作方法、以及阵列基板与显示装置 | |
CN105742370B (zh) | 低温多晶硅薄膜晶体管的制备方法 | |
JP2008177419A (ja) | シリコン薄膜形成方法 | |
WO2020134937A1 (zh) | 薄膜晶体管的制作方法和显示面板 | |
CN106601593A (zh) | 降低多晶硅表面粗糙度的方法 | |
JPH06181313A (ja) | 薄膜トランジスタとその製法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150812 Termination date: 20211118 |