CN105489487A - 低温多晶硅薄膜及晶体管的制备方法、激光晶化装置 - Google Patents

低温多晶硅薄膜及晶体管的制备方法、激光晶化装置 Download PDF

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CN105489487A
CN105489487A CN201610023998.6A CN201610023998A CN105489487A CN 105489487 A CN105489487 A CN 105489487A CN 201610023998 A CN201610023998 A CN 201610023998A CN 105489487 A CN105489487 A CN 105489487A
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amorphous silicon
low
polysilicon film
temperature polysilicon
substrate
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许晓伟
李小龙
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN201610023998.6A priority Critical patent/CN105489487A/zh
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Priority to US15/228,140 priority patent/US10049873B2/en
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Abstract

本发明提供一种低温多晶硅薄膜的制备方法、低温多晶硅薄膜晶体管的制备方法、激光晶化装置，属于显示技术领域。本发明的低温多晶硅薄膜的制备方法，包括：在基底上方形成非晶硅薄膜；对所述非晶硅薄膜背离所述基底的一侧进行激光退火，以及对所述基底背离所述非晶硅薄膜的一侧进行激光退火，以形成低温多晶硅薄膜。由于本发明的低温多晶硅薄膜的制备方法不仅可以对非晶硅薄膜背离所述基底的一侧进行激光退火，而且还对基底背离所述非晶硅薄膜的一侧进行激光退火，对基底背离所述非晶硅薄膜的一侧进行激光退火的可以对非晶硅薄膜进行保温，这样可以延长多晶硅的结晶时间，可获得更大尺寸的晶粒，提高载流子迁移率，降低漏电流。

Description

低温多晶硅薄膜及晶体管的制备方法、激光晶化装置
技术领域
本发明属于显示技术领域，具体涉及一种低温多晶硅薄膜的制备方法、低温多晶硅薄膜晶体管的制备方法、激光晶化装置。
背景技术
随着显示技术的发展，人们对显示画质的需求日益增长，高画质、高分辨率的平板显示装置的需求越来越普遍，也越来越得到显示面板厂家的重视。
薄膜晶体管(ThinFilmTransistor，简称TFT)是平板显示面板的主要驱动器件，直接关系到高性能平板显示装置的发展方向。薄膜晶体管具有多种结构，制备相应结构的薄膜晶体管的材料也具有多种，例如：非晶硅和多晶硅都是目前常用的薄膜晶体管制备材料。然而，非晶硅本身存在很多无法避免的缺点，比如：低迁移率、低稳定性等；与此相比，低温多晶硅(LowTemperaturePoly-Silicon，简称LTPS)具有较高的迁移率及稳定性，其迁移率可达非晶硅的几十甚至几百倍。因此，采用低温多晶硅材料形成薄膜晶体管的技术得到了迅速发展，由LTPS衍生的新一代液晶显示装置(LiquidCrystalDisplay：简称LCD)或有机电致发光显示装置(OrganicLight-EmittingDiode:简称OLED)成为重要的显示技术，尤其是OLED显示装置，由于OLED具有超薄、低功耗、同时自身发光等特点，备受用户的青睐。
虽然低温多晶硅薄膜晶体管具有上述优点，但是，在低温多晶硅薄膜晶体管(LTPSTFT)中的低温多晶硅薄膜(也就是有源层)，是采用对非晶硅薄膜进行准分子激光退火(ELA)工艺形成的，而在激光退火过程中会引起多晶硅的晶粒尺寸不均一和多晶硅薄膜表面出现非常大的粗糙度，从而导致温多晶硅薄膜晶体管的阈值电压和迁移率的均匀性不佳，尤其是当晶体管尺寸缩小时，阈值电压不均匀的问题将变得更为严重。而且，在形成低温多晶硅薄膜时，通常的做法是在玻璃基板上依次制备氮化硅、氧化硅作为缓冲层，之后沉积非晶硅薄膜，然后采用的波长为308nm的准分子激光照射非晶硅薄膜，在非晶硅转化为多晶硅的过程中，结晶时间直接决定了晶粒尺寸的大小，因此需要较厚的缓冲层以达到保温的目的。目前有研究人员提出给玻璃基板加热延长结晶时间，但是受玻璃基板耐受温度及加热台与非晶硅之间有较厚的绝热层(玻璃基板及缓冲层)限制了其加热温度及性能。
发明内容
本发明所要解决的技术问题包括，针对现有的低温多晶硅薄膜存在的上述的问题，提供一种延长多晶硅的结晶时间，可获得更大尺寸的晶粒，提高载流子迁移率，降低漏电流的低温多晶硅薄膜的制备方法、低温多晶硅薄膜晶体管的制备方法、激光晶化装置。
解决本发明技术问题所采用的技术方案是一种低温多晶硅薄膜的制备方法，包括如下步骤：
在基底上方形成非晶硅薄膜；
对所述非晶硅薄膜背离所述基底的一侧进行激光退火，以及对所述基底背离所述非晶硅薄膜的一侧进行激光退火，以形成低温多晶硅薄膜。
优选的是，所述对所述非晶硅薄膜背离所述基底的一侧进行激光退火先于对所述基底背离所述非晶硅薄膜的一侧进行激光退火。
优选的是，对所述非晶硅薄膜背离所述基底的一侧采用准分子激光器进行激光退火。
优选的是，对所述基底背离所述非晶硅薄膜的一侧采用固体激光器进行激光退火。
优选的是，对所述非晶硅薄膜背离所述基底的一侧进行激光退火的步骤中，所述激光的波长为308nm，能量密度为300-500mJ/cm2，光脉冲频率为300-500Hz，重叠率为92-98％，扫描速率为4-16mm/s。
优选的是，对所述基底背离所述非晶硅薄膜的一侧进行激光退火的步骤中，所述激光的波长为308-1062nm，能量密度为10-200mJ/cm2。
优选的是，所述在基底上方形成非晶硅薄膜之前还包括：
在基底上形成缓冲层的步骤。
进一步优选的是，所述缓冲层至少包括氧化硅层、氮化硅层中的至少一层结构。
进一步优选的是，所述缓冲层包括氧化硅层和氮化硅层两层结构；其中，所述氮化硅层的厚度为40-100nm，所述氧化硅层的厚度为100-300nm。
优选的是，所述非晶硅薄膜的厚度为400-600nm。
解决本发明技术问题所采用的技术方案是一种低温多晶硅薄膜晶体管的制备方法，包括上述的低温多晶硅薄膜的制备方法。
解决本发明技术问题所采用的技术方案是一种低温多晶硅薄膜晶体管的制备方法，其包括通过工艺形成包括有源层的步骤，形成所述有源层的步骤具体包括：
在基底上方形成非晶硅薄膜；
对所述非晶硅薄膜背离所述基底的一侧进行激光退火，以及对所述基底背离所述非晶硅薄膜的一侧进行激光退火，以形成低温多晶硅薄膜；
对低温多晶硅薄膜通过构图工艺，形成包括有源层的图形。
优选的是，所述对所述非晶硅薄膜背离所述基底的一侧进行激光退火先于对所述基底背离所述非晶硅薄膜的一侧进行激光退火。
优选的是，所述在基底上方形成非晶硅薄膜之前还包括：
在基底上形成缓冲层的步骤。
解决本发明技术问题所采用的技术方案是一种激光晶化装置，包括：
工作腔；
载台，设置在所述工作腔内，用于承载形成有非晶硅薄膜的基底；
第一激光器，用于对所述非晶硅薄膜背离所述基底的一侧进行激光退火；
第二激光器，用于所述基底背离所述非晶硅薄膜的一侧进行激光退火。
优选的是，所述第一激光器为准分子激光器；所述第二激光器为固体激光器。
本发明具有如下有益效果：
本发明的低温多晶硅薄膜的制备方法不仅可以对非晶硅薄膜背离所述基底的一侧进行激光退火，而且还对基底背离所述非晶硅薄膜的一侧进行激光退火，对基底背离所述非晶硅薄膜的一侧进行激光退火的可以对非晶硅薄膜进行保温，这样可以延长多晶硅的结晶时间，可获得更大尺寸的晶粒，提高载流子迁移率，降低漏电流。
附图说明
图1为本发明的实施例1的低温多晶硅薄膜的制备方法的示意图；
图2为本发明的实施例1的低温多晶硅薄膜的制备方法的流程图；
图3为本发明的实施例2的低温多晶硅薄膜晶体管的制备方法的流程图；
图4为本发明的实施例2的低温多晶硅薄膜晶体管的制备方法的步骤二的流程图；
图5为本发明的实施例3的激光晶化装置的结构示意图。
其中附图标记为：10、基底；11、非晶硅薄膜；12、低温多晶硅薄膜；1、第一激光器；2、第二激光器；3、工作腔；4、载台；101、第一激光束；102、第二激光束。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
实施例1：
结合图1和2所示，本实施例提供一种低温多晶硅薄膜12的制备方法，包括如下步骤：
步骤一、在基底10上形成缓冲层。
在该步骤中，基底10采用玻璃等透明材料制成、且经过预先清洗。具体的，在基底10上采用溅射方式、热蒸发方式、等离子体增强化学气相沉积(PlasmaEnhancedVaporDeposition：简称PECVD)方式、低压化学气相沉积(LowPressureChemicalVaporDeposition：简称LPCVD)方式、大气压化学气相沉积(AtmosphericPressureChemicalVaporDeposition：简称APCVD)方式或电子回旋谐振化学气相沉积(ElectronCyclotronResonanceChemicalVaporDeposition:简称ECR-CVD)方式形成缓冲层。
其中，缓冲层至少包括氧化硅、氮化硅中的至少一层结构，厚度为140nm至400nm。优选的，缓冲层包括氧化硅层和氮化硅层两层结构；其中，所述氮化硅层的厚度为40-100nm，所述氧化硅层的厚度为100-300nm。
之所以制备如此厚的缓冲层的原因是为了形成有效的阻热层，以使在后续步骤中非晶硅充分晶化形成多晶硅。
步骤二、在完成上述步骤的基底10上，形成非晶硅薄膜11(a-Si)。
在该步骤中，形成非晶硅薄膜11的方式包括等离子体增强化学气相沉积方式、低压化学气相沉积方式。非晶硅薄膜11的厚度为400-600nm。
步骤三、对非晶硅薄膜11背离所述基底10的一侧进行激光退火，以及对所述基底10背离所述非晶硅薄膜11的一侧进行激光退火，以形成低温多晶硅薄膜12。
该步骤具体包括：首先，采用准分子激光器所发射的第一激光束101对非晶硅薄膜11背离所述基底10的一侧进行激光退火；其中，准分子激光器所发射出的激光的波长为308nm，能量密度为300-500mJ/cm2，光脉冲频率为300-500Hz，重叠率为92-98％，扫描速率为4-16mm/s。
迟于对非晶硅薄膜11背离所述基底10的一侧进行激光退火0.1s至1s后，开始采用固体激光器发射第二激光束102对所述基底10背离所述非晶硅薄膜11的一侧进行激光退火，以使第一激光束101和第二激光束102在水平方向上的间距在300μm～10mm，对于这种间距的要求，本实施例中将两个激光器设置在异侧，这样激光器不受体积限制，更有助于异侧激光扫描，如此能够更精确的控制结晶尺寸的范围。其中，固体激光器所发射的激光的波长为308-1062nm，能量密度为10-200mJ/cm2。
最终形成多晶硅薄膜。
之所以先对非晶硅薄膜11背离所述基底10的一侧进行激光退火，后对基底10背离所述非晶硅薄膜11的一侧进行激光退火的原因是，对基底10背离所述非晶硅薄膜11的一侧进行激光退火的目的是为了对非晶硅薄膜11进行保温，这样可以延长多晶硅的结晶时间，可获得更大尺寸的晶粒，提高载流子迁移率，降低漏电流。而且，由于增加了基底10背离所述非晶硅薄膜11的一侧进行激光退火的步骤，本实施例中缓冲层的厚度可以较现有技术中做的薄一些。
实施例2：
如图3所示，本实施例提供一种低温多晶硅薄膜晶体管的制备方法，其包括实施例1中所述的制备低温多晶硅薄膜12的步骤。具体的，以制备顶栅型晶体管为例进行说明。
步骤一、在基底10上形成缓冲层。
在该步骤中，基底10采用玻璃等透明材料制成、且经过预先清洗。具体的，在基底10上采用溅射方式、热蒸发方式、等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式形成缓冲层。
其中，缓冲层至少包括氧化硅、氮化硅中的至少一层结构，厚度为140nm至400nm。优选的，缓冲层包括氧化硅层和氮化硅层两层结构；其中，所述氮化硅层的厚度为40-100nm，所述氧化硅层的厚度为100-300nm。
之所以制备如此厚的缓冲层的原因是为了形成有效的阻热层，以使在后续步骤中非晶硅充分晶化形成多晶硅。
步骤二、在完成上述步骤的基底10上，通过构图工艺形成包括有源层的图形。
如图4所示，在该步骤中，具体包括：S21、形成非晶硅薄膜11(a-Si)。形成非晶硅薄膜11的方式包括等离子体增强化学气相沉积方式、低压化学气相沉积方式。非晶硅薄膜11的厚度为400-600nm。
S22、对非晶硅薄膜11背离所述基底10的一侧进行激光退火，以及对所述基底10背离所述非晶硅薄膜11的一侧进行激光退火，以形成低温多晶硅薄膜12。
步骤S22具体包括：首先，采用准分子激光器发射第一激光束101对非晶硅薄膜11背离所述基底10的一侧进行激光退火；其中，准分子激光器所发射出的激光的波长为308nm，能量密度为300-500mJ/cm2，光脉冲频率为300-500Hz，重叠率为92-98％，扫描速率为4-16mm/s。
迟于对非晶硅薄膜11背离所述基底10的一侧进行激光退火0.1s至1s后，开始采用固体激光器发射第二激光束102对所述基底10背离所述非晶硅薄膜11的一侧进行激光退火，以使第一激光束101和第二激光束102在水平方向上的间距在300μm～10mm，对于这种间距的要求，本实施例中将两个激光器设置在异侧，这样激光器不受体积限制，更有助于异侧激光扫描，如此能够更精确的控制结晶尺寸的范围。其中，固体激光器所发射的激光的波长为308-1062nm，能量密度为10-200mJ/cm2。
S23、通过构图工艺，形成包括薄膜晶体管有源层的图形。
步骤三、形成栅极绝缘层。
在该步骤中，采用热生长、常压化学气相沉积、低压化学气相沉积、等离子体辅助化学气相淀积、溅射等制备方法形成栅极绝缘层。
步骤四、通过构图工艺形成包括栅极的图形。
在该步骤中，采用溅射方式、热蒸发方式、等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式形成栅金属薄膜，对该栅金属薄膜进行涂覆光刻胶、曝光、显影、刻蚀、剥离光刻胶形成包括薄膜晶体管栅极。
步骤五、形成钝化层，并刻蚀钝化层和栅极绝缘层，形成与源极接触区和漏极接触区对应的过孔。
该步骤中，采用热生长、常压化学气相沉积、低压化学气相沉积、等离子体辅助化学气相淀积、溅射等制备方法形成钝化层，通过刻蚀工艺刻蚀形成贯穿钝化层和栅极绝缘层，且与源极接触区和漏极接触区对应的过孔。
步骤六、通过构图工艺形成包括源极和漏极的图形。
该步骤具体为，采用溅射方式、热蒸发方式、等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式形成源漏金属薄膜，对源漏金属薄膜进行涂覆光刻胶、曝光、显影、刻蚀、剥离光刻胶形成包括薄膜晶体管源极和漏极的图形，源极和漏极分别通过相应的过孔与有源层的源极接触区和漏极接触区接触。
至此完成了低温多晶硅薄膜晶体管的制备。
实施例3：
如图5所示，本实施例提供一种激光晶化装置，其可用于用于制备实施例1和2中的低温多晶硅薄膜12。本实施例的激光晶化装置具体包括：工作腔3、载台4、第一激光器1和第二激光器2；其中，载台4设置在所述工作腔3内，用于承载形成有非晶硅薄膜11的基底10；第一激光器1，用于对所述非晶硅薄膜11背离所述基底10的一侧进行激光退火；第二激光器2，用于所述基底10背离所述非晶硅薄膜11的一侧进行激光退火。
其中，上述第一激光器1优选为准分子激光器；上述的第二激光器2优选为固体激光器。
应用本实施例的激光晶化装置不仅可以对非晶硅薄膜11背离所述基底10的一侧进行激光退火，而且还对基底10背离所述非晶硅薄膜11的一侧进行激光退火，对基底10背离所述非晶硅薄膜11的一侧进行激光退火的可以对非晶硅薄膜11进行保温，这样可以延长多晶硅的结晶时间，可获得更大尺寸的晶粒，提高载流子迁移率，降低漏电流。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (16)

1.一种低温多晶硅薄膜的制备方法，其特征在于，包括如下步骤：
在基底上方形成非晶硅薄膜；
对所述非晶硅薄膜背离所述基底的一侧进行激光退火，以及对所述基底背离所述非晶硅薄膜的一侧进行激光退火，以形成低温多晶硅薄膜。
2.根据权利要求1所述的低温多晶硅薄膜的制备方法，其特征在于，所述对所述非晶硅薄膜背离所述基底的一侧进行激光退火先于对所述基底背离所述非晶硅薄膜的一侧进行激光退火。
3.根据权利要求1或2所述的低温多晶硅薄膜的制备方法，其特征在于，对所述非晶硅薄膜背离所述基底的一侧采用准分子激光器进行激光退火。
4.根据权利要求1或2所述的低温多晶硅薄膜的制备方法，其特征在于，对所述基底背离所述非晶硅薄膜的一侧采用固体激光器进行激光退火。
5.根据权利要求1或2所述的低温多晶硅薄膜的制备方法，其特征在于，对所述非晶硅薄膜背离所述基底的一侧进行激光退火的步骤中，所述激光的波长为308nm，能量密度为300-500mJ/cm2，光脉冲频率为300-500Hz，重叠率为92-98％，扫描速率为4-16mm/s。
6.根据权利要求1或2所述的低温多晶硅薄膜的制备方法，其特征在于，对所述基底背离所述非晶硅薄膜的一侧进行激光退火的步骤中，所述激光的波长为308-1062nm，能量密度为10-200mJ/cm2。
7.根据权利要求1或2所述的低温多晶硅薄膜的制备方法，其特征在于，所述在基底上方形成非晶硅薄膜之前还包括：
在基底上形成缓冲层的步骤。
8.根据权利要求7所述的低温多晶硅薄膜的制备方法，其特征在于，所述缓冲层至少包括氧化硅层、氮化硅层中的至少一层结构。
9.根据权利要求8所述的低温多晶硅薄膜的制备方法，其特征在于，所述缓冲层包括氧化硅层和氮化硅层两层结构；其中，所述氮化硅层的厚度为40-100nm，所述氧化硅层的厚度为100-300nm。
10.根据权利要求1或2所述的低温多晶硅薄膜的制备方法，其特征在于，所述非晶硅薄膜的厚度为400-600nm。
11.一种低温多晶硅薄膜晶体管的制备方法，其特征在于，包括权利要求1-10中任一项所述的低温多晶硅薄膜的制备方法。
12.一种低温多晶硅薄膜晶体管的制备方法，包括通过工艺形成包括有源层的步骤，其特征在于，形成所述有源层的步骤具体包括：
在基底上方形成非晶硅薄膜；
对所述非晶硅薄膜背离所述基底的一侧进行激光退火，以及对所述基底背离所述非晶硅薄膜的一侧进行激光退火，以形成低温多晶硅薄膜；
对低温多晶硅薄膜通过构图工艺，形成包括有源层的图形。
13.根据权利要求12所述的低温多晶硅薄膜晶体管的制备方法，其特征在于，所述对所述非晶硅薄膜背离所述基底的一侧进行激光退火先于对所述基底背离所述非晶硅薄膜的一侧进行激光退火。
14.根据权利要求12或13所述的低温多晶硅薄膜晶体管的制备方法，其特征在于，
所述在基底上方形成非晶硅薄膜之前还包括：
在基底上形成缓冲层的步骤。
15.一种激光晶化装置，其特征在于，包括：
工作腔；
载台，设置在所述工作腔内，用于承载形成有非晶硅薄膜的基底；
第一激光器，用于对所述非晶硅薄膜背离所述基底的一侧进行激光退火；
第二激光器，用于所述基底背离所述非晶硅薄膜的一侧进行激光退火。
16.根据权利要求15所述的激光晶化装置，其特征在于，所述第一激光器为准分子激光器；所述第二激光器为固体激光器。
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