CN102522432A - 具有浪涌电流保护的半导体器件及其制造方法 - Google Patents

具有浪涌电流保护的半导体器件及其制造方法 Download PDF

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Publication number
CN102522432A
CN102522432A CN2011104388366A CN201110438836A CN102522432A CN 102522432 A CN102522432 A CN 102522432A CN 2011104388366 A CN2011104388366 A CN 2011104388366A CN 201110438836 A CN201110438836 A CN 201110438836A CN 102522432 A CN102522432 A CN 102522432A
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type sic
semiconductor material
type
sic semiconductor
semiconductor device
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CN2011104388366A
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Chinese (zh)
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伊格尔·桑金
约瑟夫·尼尔·梅里特
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PI Corp
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SS SC IP LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Electrodes Of Semiconductors (AREA)
CN2011104388366A 2006-05-02 2007-05-01 具有浪涌电流保护的半导体器件及其制造方法 Pending CN102522432A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/415,279 2006-05-02
US11/415,279 US7274083B1 (en) 2006-05-02 2006-05-02 Semiconductor device with surge current protection and method of making the same

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CN2007800160155A Division CN101449385B (zh) 2006-05-02 2007-05-01 具有浪涌电流保护的半导体器件及其制造方法

Publications (1)

Publication Number Publication Date
CN102522432A true CN102522432A (zh) 2012-06-27

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CN2007800160155A Expired - Fee Related CN101449385B (zh) 2006-05-02 2007-05-01 具有浪涌电流保护的半导体器件及其制造方法

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Country Link
US (2) US7274083B1 (https=)
EP (1) EP2013911A2 (https=)
JP (1) JP5357014B2 (https=)
KR (1) KR101412802B1 (https=)
CN (2) CN102522432A (https=)
AU (1) AU2007248544B2 (https=)
CA (1) CA2650470A1 (https=)
NZ (1) NZ572020A (https=)
WO (1) WO2007130505A2 (https=)

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JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
JP2009224603A (ja) * 2008-03-17 2009-10-01 Toyota Central R&D Labs Inc ダイオードの製造方法
JP5546759B2 (ja) * 2008-08-05 2014-07-09 トヨタ自動車株式会社 半導体装置及びその製造方法
JP5047133B2 (ja) * 2008-11-19 2012-10-10 昭和電工株式会社 半導体装置の製造方法
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
KR101051578B1 (ko) * 2009-09-08 2011-07-22 삼성전기주식회사 반도체 소자 및 그 제조 방법
EP2541609B1 (en) * 2010-02-23 2019-07-03 Yoshitaka Sugawara Semiconductor device
JP5106604B2 (ja) 2010-09-07 2012-12-26 株式会社東芝 半導体装置およびその製造方法
US20120170163A1 (en) * 2010-12-31 2012-07-05 Adrian Mikolajczak Barrier diode for input power protection
KR101461886B1 (ko) * 2013-09-10 2014-11-13 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP2015149375A (ja) * 2014-02-06 2015-08-20 住友電気工業株式会社 ダイオード
JP2015177071A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置の製造方法
CN103904135B (zh) * 2014-04-18 2018-03-30 苏州捷芯威半导体有限公司 肖特基二极管及其制造方法
JP2017011060A (ja) * 2015-06-19 2017-01-12 住友電気工業株式会社 ショットキーバリアダイオード
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
EP3555925B1 (en) * 2016-12-15 2022-01-12 Griffith University Silicon carbide schottky diodes
EP3416184A1 (en) 2017-06-14 2018-12-19 ABB Schweiz AG High power semiconductor device with mesa termination structure and method for manufacturing the same
US10615292B2 (en) * 2018-03-27 2020-04-07 Hong Kong Applied Science And Technology Research Institute Co., Ltd. High voltage silicon carbide Schottky diode flip chip array
CN111081758B (zh) * 2019-11-21 2023-06-02 北京绿能芯创电子科技有限公司 降低导通电阻的SiC MPS结构及制备方法
WO2022209778A1 (ja) * 2021-03-29 2022-10-06 京セラ株式会社 半導体素子、半導体装置及び半導体素子の製造方法
CN114759080B (zh) * 2022-06-13 2022-09-09 深圳市时代速信科技有限公司 一种半导体器件及其制备方法
CN117174763B (zh) * 2023-11-03 2024-03-01 山东大学 碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法

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Also Published As

Publication number Publication date
CN101449385B (zh) 2012-02-08
AU2007248544B2 (en) 2013-07-18
KR20090017561A (ko) 2009-02-18
WO2007130505A3 (en) 2008-12-24
CN101449385A (zh) 2009-06-03
WO2007130505A2 (en) 2007-11-15
US7960198B2 (en) 2011-06-14
NZ572020A (en) 2011-09-30
US20080160685A1 (en) 2008-07-03
US7274083B1 (en) 2007-09-25
CA2650470A1 (en) 2007-11-15
JP2009535853A (ja) 2009-10-01
JP5357014B2 (ja) 2013-12-04
EP2013911A2 (en) 2009-01-14
AU2007248544A1 (en) 2007-11-15
KR101412802B1 (ko) 2014-06-27

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