JP2005518672A - 高くなったガードリングを有するパワーSiCデバイス - Google Patents
高くなったガードリングを有するパワーSiCデバイス Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 description 27
- 238000005468 ion implantation Methods 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 240000004050 Pentaglottis sempervirens Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Abstract
Description
発明の分野
本発明は、一般に、縦型および横型SiCパワー半導体デバイス用の、エピタキシャルに成長したガードリングエッジ終端構造、このようなガードリングを有するSiCパワーデバイス、およびこれらのデバイスを作製する方法に関する。
半導体パワーデバイスの1つの特徴的な機能はその高電圧阻止性能である。高電圧を支える能力は、電子なだれ降伏として知られる現象の開始により一般に決定されるが、デバイス構造内の電界が非常に大きくなり、空乏領域を貫く衝突電離率が無限大に近づくとき、この電子なだれ降伏は生じる。電子なだれ降伏の引き金となり得る半導体デバイス内の大きな電界は、電流移動が発生するデバイス内部領域、およびかかるデバイスのエッジの両方に発生する可能性がある。半導体パワーデバイスの適切な設計には、高電圧阻止性能を保証するために、内部およびエッジでの電界分布に対する慎重な注意を要する。B. Jayant Baliga, Power Semiconductor Devices, Chapter 3, pp. 66-125 (1996)。
・ 半導体デバイスの電極金属の電解酸化層(いわゆる電界プレート)上への延伸。
・ 通常、多量に不純物が添加され、拡散され、または注入された、デバイスのバルクとは反対の導電型を有するリング(いわゆるガードリング)である、デバイスを取り囲む浮遊電位を有する一連の導電領域の形成。
・ デバイスのバルクとは反対の導電型を有しデバイスを取り囲む、広く拡散され、注入された単一のリングの生成。このリングは完全な空乏状態にあり、デバイスのエッジの電位勾配を減少させる(いわゆる接合終端延伸、すなわちJTE)。
本発明の1つの態様により、p型エピタキシャルSiC層から形成されたガードリングのそばに、エッジ終端構造を実装し、n型SiCドリフト領域上面上で成長したSiCのダイオードおよびトランジスタが提供される。バイポーラ接合トランジスタ(BJT)、静電誘導トランジスタ(SIT)、およびPiNダイオードとして公知のかかるデバイスにおいて、この新規のエッジ終端構造はセルフアラインされることがあるが、それは、たとえば、PiNダイオードアノード領域、BJTの成長したベース領域、またはSITの成長したゲート領域などデバイスの別部分の形成と同じエッチング工程で行うことができるからである。
PiNダイオード、ショットキーダイオード、バイポーラ接合トランジスタ(BJT)、静電誘導トランジスタ(SIT)、およびその他の周知の半導体デバイスなどのエピタキシャル半導体デバイスの作製を考えるとき、他の全ての要素が同一な場合、エピタキシャルに成長したガードリングの利用が、注入されたガードリングよりも好ましい。なぜなら、その作製は、デバイスの他の部分のエッチング工程と組み合わせることができ、かつ費用のかかる注入工程を避けることができるからである。さらに、イオン注入により生じた表面およびバルクの損傷による漏れ電流を、エピタキシャルに成長したエッジ終端構造を利用することにより、大きく減少させることができる。
Claims (36)
- 炭化ケイ素(SiC)半導体デバイスであって、
ドナーまたはアクセプタ原子が添加されたSiCの第1層と、第1層の表面上に配置され異なる導電型を有する材料の第2層とであって、これらの層の境界面に接合を形成する第1および第2層を含み、
デバイスが、接合を取り囲む複数の非交差リングをさらに含み、
リングはアクセプタ原子が添加されたSiCから形成され、かつ、
これらのリングはドナー原子が添加されたSiCから形成されるデバイスの層の表面上に配置されることを特徴とするデバイス。 - SiCリングが形成されるアクセプタ原子が添加されたSiCが、エピタキシャルに成長した層である、請求項1に記載のデバイス。
- 炭化ケイ素半導体デバイスが、PiNダイオード、ショットキーダイオード、バイポーラ接合トランジスタ、および静電誘導トランジスタからなる群から選択される、請求項1に記載のデバイス。
- 炭化ケイ素半導体デバイスが、横型MOSFETおよび横型PiNダイオードからなる群から選択される、請求項1に記載のデバイス。
- 接合が金属層およびSiC半導体層間の境界面である、請求項1に記載のデバイス。
- ベースを有する内壁を有し、接合の周縁からの距離が均一である最も内側のリングをさらに含む、請求項1に記載の炭化ケイ素デバイス。
- 内壁のベースが、接合の空乏領域の厚さ未満で、接合の周縁に対して間隔をあけられている、請求項6に記載のデバイス。
- 1つのリングがある、請求項1に記載のデバイス。
- 少なくとも2つのリングがある、請求項1に記載のデバイス。
- 各リングの周縁の形状が円形ではない、請求項1に記載のデバイス。
- SiC半導体デバイスを作製する方法であって、
ドナーまたはアクセプタ原子が添加されたSiCの第1層と、第1層の第1表面上に配置され異なる導電型を有する材料の第2層との境界面に接合を形成し;
電子ドナー原子が添加されたSiC層の表面上に、成長中に元の位置で電子アクセプタ原子が添加されるSiC層をエピタキシャルに成長させ、エピタキシャルに成長したp型SiC層を形成し;
エピタキシャルに成長したp型SiC層を貫いて、複数の非交差トレンチをエッチングして、複数の高くなったリングを形成することとを含むものであって、
高くなったリングがデバイスの前記接合を取り囲むことを特徴とする方法。 - 前記各トレンチが内壁および外壁を含む、請求項11に記載のSiC半導体デバイスを形成する方法。
- 最も内側のトレンチの内壁が接合のエッジと当接する、請求項12に記載のSiC半導体デバイスを形成する方法。
- 最も内側のトレンチの内壁が、接合の空乏領域の厚さ以下の距離で、最も内側のトレンチの外壁に対して間隔をあけられている、請求項13に記載のSiC半導体デバイスを形成する方法。
- 前記トレンチが等方性または異方性のエッチングにより形成される、請求項11に記載の方法。
- ドナー原子が、ヒ素、窒素、およびリンからなる群から選択される、請求項11に記載の方法。
- ドナー原子が添加されたSiC層内のドナー原子の濃度が5×1016cm-3未満である、請求項11に記載の方法。
- アクセプタ原子が、アルミニウム、ホウ素、およびガリウムからなる群から選択される、請求項11に記載の方法。
- アクセプタ原子が添加されたSiC層内のアクセプタ原子の濃度が1018cm-3以上である、請求項11に記載の方法。
- 請求項11の方法により作製される半導体デバイス。
- ドナー原子が、ヒ素、窒素、およびリンからなる群から選択される、請求項1に記載のデバイス。
- ドナー原子が添加されたSiC層内のドナー原子の濃度が5×1016cm-3未満である、請求項1に記載のデバイス。
- アクセプタ原子が、アルミニウム、ホウ素、およびガリウムからなる群から選択される、請求項1に記載のデバイス。
- エピタキシャルに成長したp型SiC層内のアクセプタ原子の濃度が、1018cm-3以上である、請求項1に記載のデバイス。
- 第1層はドナー原子が添加され、第2層はアクセプタ原子が添加されたSiCを含み、リングが、第2層が配置されている第1層表面と同じ側に配置される、請求項1に記載のデバイス。
- 第1層内のドナー原子の濃度が5×1016cm-3未満である、請求項25に記載のデバイス。
- 第2層との接合を形成する表面の反対側にある第1層表面が、第3SiC層表面上に配置される、請求項25に記載のデバイス。
- 第3層はドナー原子が添加される、請求項27に記載のデバイス
- 第3層内のドナー原子の濃度が5×1016cm-3より大きい、請求項28に記載のデバイス。
- 第3層内のドナー原子の濃度が1018cm-3より大きい、請求項28に記載のデバイス。
- 第1層はアクセプタ原子が添加され、第2層はドナー原子が添加されたSiCを含み、リングが第1層との接合を形成する第2層表面の反対側にある第2層表面上に配置される、請求項1に記載のデバイス。
- 第1層内のアクセプタ原子の濃度が5×1016cm-3未満である、請求項31に記載のデバイス。
- 第1層内のアクセプタ原子の濃度が5×1016cm-3以上でかつ1018cm-3以下の範囲内にある、請求項31に記載のデバイス。
- 第2層との接合を形成する表面の反対側にある第1層表面は、アクセプタ原子が添加された第3SiC層の表面上に配置される、請求項31に記載のデバイス。
- 第2層との接合を形成する表面の反対側にある第1層表面が、半絶縁性SiC基板を含む第3層表面上に配置される、請求項31に記載のデバイス。
- 第2層はリングを形成する電子アクセプタ原子が添加され、エピタキシャルに成長したSiC層である、請求項11に記載の方法。
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US10/079,892 US6693308B2 (en) | 2002-02-22 | 2002-02-22 | Power SiC devices having raised guard rings |
PCT/US2003/005156 WO2003073471A2 (en) | 2002-02-22 | 2003-02-21 | POWER SiC DEVICES HAVING RAISED GUARD RINGS |
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EP (1) | EP1485942B1 (ja) |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173705A (ja) * | 2005-12-26 | 2007-07-05 | Toyota Central Res & Dev Lab Inc | 窒化物半導体装置 |
JP2008177369A (ja) * | 2007-01-18 | 2008-07-31 | Sumitomo Electric Ind Ltd | ショットキバリアダイオード |
JP2011003727A (ja) * | 2009-06-18 | 2011-01-06 | Fuji Electric Systems Co Ltd | 半導体装置およびその製造方法 |
WO2013021636A1 (ja) * | 2011-08-10 | 2013-02-14 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2014041920A (ja) * | 2012-08-22 | 2014-03-06 | Rohm Co Ltd | 半導体装置 |
JP2015061065A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
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Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2816113A1 (fr) * | 2000-10-31 | 2002-05-03 | St Microelectronics Sa | Procede de realisation d'une zone dopee dans du carbure de silicium et application a une diode schottky |
JPWO2003092078A1 (ja) * | 2002-04-25 | 2005-09-02 | サンケン電気株式会社 | 半導体素子及びその製造方法 |
WO2005119793A2 (en) * | 2004-05-28 | 2005-12-15 | Caracal, Inc. | Silicon carbide schottky diodes and fabrication method |
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US7834376B2 (en) * | 2005-03-04 | 2010-11-16 | Siliconix Technology C. V. | Power semiconductor switch |
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CN106024746B (zh) * | 2016-07-25 | 2018-08-17 | 扬州扬杰电子科技股份有限公司 | 一种适用于金属丝键合的trench肖特基芯片及其加工工艺 |
IT201800004149A1 (it) * | 2018-03-30 | 2019-09-30 | St Microelectronics Srl | Fotorivelatore di luce ultravioletta di carburo di silicio e suo processo di fabbricazione |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293852A (ja) * | 1996-04-25 | 1997-11-11 | Sansha Electric Mfg Co Ltd | 電力用半導体装置及びその製造方法 |
JPH1187698A (ja) * | 1997-09-02 | 1999-03-30 | Kansai Electric Power Co Inc:The | 高耐圧半導体装置及びこの装置を用いた電力変換器 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL169121C (nl) * | 1970-07-10 | 1982-06-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een halfgeleiderlichaam, dat aan een oppervlak is voorzien van een althans ten dele in het halfgeleiderlichaam verzonken, door thermische oxydatie gevormd oxydepatroon. |
US4242690A (en) * | 1978-06-06 | 1980-12-30 | General Electric Company | High breakdown voltage semiconductor device |
US4982260A (en) | 1989-10-02 | 1991-01-01 | General Electric Company | Power rectifier with trenches |
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
JPH05129656A (ja) * | 1991-10-31 | 1993-05-25 | Sharp Corp | pn接合型発光ダイオード |
EP0571027A1 (en) * | 1992-05-21 | 1993-11-24 | Koninklijke Philips Electronics N.V. | Semiconductor device comprising a lateral DMOST with breakdown voltage raising zones and provisions for exchanging charge with the back gate region |
TW286435B (ja) | 1994-07-27 | 1996-09-21 | Siemens Ag | |
JPH0897441A (ja) | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
US5967795A (en) | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
-
2002
- 2002-02-22 US US10/079,892 patent/US6693308B2/en not_active Expired - Lifetime
-
2003
- 2003-02-21 WO PCT/US2003/005156 patent/WO2003073471A2/en active Application Filing
- 2003-02-21 AU AU2003230555A patent/AU2003230555A1/en not_active Abandoned
- 2003-02-21 EP EP03723635A patent/EP1485942B1/en not_active Expired - Lifetime
- 2003-02-21 JP JP2003572069A patent/JP2005518672A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09293852A (ja) * | 1996-04-25 | 1997-11-11 | Sansha Electric Mfg Co Ltd | 電力用半導体装置及びその製造方法 |
JPH1187698A (ja) * | 1997-09-02 | 1999-03-30 | Kansai Electric Power Co Inc:The | 高耐圧半導体装置及びこの装置を用いた電力変換器 |
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US11355651B2 (en) | 2011-07-28 | 2022-06-07 | Rohm Co., Ltd. | Semiconductor device |
JP2013038308A (ja) * | 2011-08-10 | 2013-02-21 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
WO2013021636A1 (ja) * | 2011-08-10 | 2013-02-14 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP2014041920A (ja) * | 2012-08-22 | 2014-03-06 | Rohm Co Ltd | 半導体装置 |
US10141439B2 (en) | 2013-09-20 | 2018-11-27 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
JP2015061065A (ja) * | 2013-09-20 | 2015-03-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP7012137B2 (ja) | 2015-05-21 | 2022-01-27 | パナソニック株式会社 | 窒化物半導体装置 |
JP2021022745A (ja) * | 2015-05-21 | 2021-02-18 | パナソニック株式会社 | 窒化物半導体装置 |
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EP1485942A2 (en) | 2004-12-15 |
WO2003073471A2 (en) | 2003-09-04 |
AU2003230555A1 (en) | 2003-09-09 |
WO2003073471A3 (en) | 2003-11-27 |
US20030162355A1 (en) | 2003-08-28 |
EP1485942A4 (en) | 2009-12-09 |
AU2003230555A8 (en) | 2003-09-09 |
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US6693308B2 (en) | 2004-02-17 |
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