CN102473844B - 基于单层或多层石墨烯的光探测器件 - Google Patents

基于单层或多层石墨烯的光探测器件 Download PDF

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Publication number
CN102473844B
CN102473844B CN201080035978.1A CN201080035978A CN102473844B CN 102473844 B CN102473844 B CN 102473844B CN 201080035978 A CN201080035978 A CN 201080035978A CN 102473844 B CN102473844 B CN 102473844B
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graphene
light
detecting device
layer
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CN102473844A (zh
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夏丰年
P·阿沃利斯
T·米勒
林佑民
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Carbon And Carbon Compounds (AREA)
CN201080035978.1A 2009-08-24 2010-08-17 基于单层或多层石墨烯的光探测器件 Active CN102473844B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/546,097 2009-08-24
US12/546,097 US8053782B2 (en) 2009-08-24 2009-08-24 Single and few-layer graphene based photodetecting devices
PCT/EP2010/061986 WO2011023603A2 (en) 2009-08-24 2010-08-17 Single and few-layer graphene based photodetecting devices

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CN102473844A CN102473844A (zh) 2012-05-23
CN102473844B true CN102473844B (zh) 2014-12-24

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US (1) US8053782B2 (enExample)
EP (1) EP2438635B1 (enExample)
JP (1) JP5937006B2 (enExample)
CN (1) CN102473844B (enExample)
TW (1) TWI496310B (enExample)
WO (1) WO2011023603A2 (enExample)

Families Citing this family (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8227842B2 (en) 2009-09-21 2012-07-24 Hitachi Global Storage Technologies Netherlands B.V. Quantum well graphene structure
US8106383B2 (en) * 2009-11-13 2012-01-31 International Business Machines Corporation Self-aligned graphene transistor
US8554022B1 (en) * 2009-12-21 2013-10-08 University Of Washington Through Its Center For Commercialization Silicon-graphene waveguide photodetectors, optically active elements and microelectromechanical devices
US20110163298A1 (en) * 2010-01-04 2011-07-07 Chien-Min Sung Graphene and Hexagonal Boron Nitride Devices
US8247060B2 (en) * 2010-04-30 2012-08-21 Hewlett-Packard Development Company, L.P. Flexible metamaterial structure based on graphene structures
BR112012028292A2 (pt) * 2010-05-05 2016-11-01 Univ Singapore artigo, método de dopagem de grafeno, fotodetector e dispositivo
US8461567B2 (en) * 2010-06-24 2013-06-11 Nokia Corporation Apparatus and method for sensing photons
US20120001761A1 (en) * 2010-07-01 2012-01-05 Nokia Corporation Apparatus and method for detecting radiation
US8969779B2 (en) * 2011-02-11 2015-03-03 Nokia Corporation Photodetecting structure with photon sensing graphene layer(s) and vertically integrated graphene field effect transistor
US9513244B2 (en) 2011-04-14 2016-12-06 Regents Of The University Of Minnesota Ultra-compact, passive, varactor-based wireless sensor using quantum capacitance effect in graphene
US9157888B2 (en) * 2011-05-05 2015-10-13 Graphensic Ab Field effect transistor for chemical sensing using graphene, chemical sensor using the transistor and method for producing the transistor
KR20130014249A (ko) 2011-07-29 2013-02-07 한국전자통신연구원 광검출기
WO2013066447A1 (en) 2011-08-01 2013-05-10 The Trustees Of Columbia University In The City Of New York Lens-free planar imager and wireless transmitter
KR101819980B1 (ko) * 2011-09-09 2018-01-19 삼성전자주식회사 광센싱 장치 및 그 구동 방법, 광센싱 장치를 포함하는 광터치 스크린 장치
WO2013059665A1 (en) 2011-10-19 2013-04-25 The Trustees Of Columbia University In The City Of New York Ultracompact fabry-perot array for ultracompact hyperspectral imaging
KR101871295B1 (ko) 2011-10-19 2018-08-03 삼성전자 주식회사 그래핀을 이용한 광 변조기
US8610989B2 (en) 2011-10-31 2013-12-17 International Business Machines Corporation Optoelectronic device employing a microcavity including a two-dimensional carbon lattice structure
KR101771427B1 (ko) * 2011-11-02 2017-09-05 삼성전자주식회사 도파로 일체형 그래핀 광검출기
KR101539671B1 (ko) 2011-11-21 2015-07-27 삼성전자주식회사 복합 투명 전극을 포함하는 그래핀 기반 포토 디텍터와 그 제조방법 및 포토 디텍터를 포함하는 장치
US8916825B1 (en) * 2011-12-01 2014-12-23 Magnolia Optical Technologies, Inc. Ultraviolet, infrared and terahertz photo/radiation sensors using graphene layers to enhance sensitivity
US9202945B2 (en) * 2011-12-23 2015-12-01 Nokia Technologies Oy Graphene-based MIM diode and associated methods
CN102540506A (zh) * 2011-12-31 2012-07-04 泰州巨纳新能源有限公司 基于d型光纤的石墨烯电光调制器及其制备方法
CN102569407A (zh) * 2012-02-14 2012-07-11 北京中瑞经纬科技有限公司 硅基石墨烯场效应晶体管及其制作方法
WO2013148349A1 (en) 2012-03-30 2013-10-03 The Trustees Of Columbia University In The City Of New York Graphene photonics for resonator-enhanced electro-optic devices and all-optical interactions
KR101532311B1 (ko) 2012-04-27 2015-06-29 삼성전자주식회사 그래핀을 이용한 광검출기와 그 제조방법
KR101919424B1 (ko) 2012-07-23 2018-11-19 삼성전자주식회사 트랜지스터 및 그 제조방법
US20150243826A1 (en) * 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
CN102983178B (zh) * 2012-09-07 2015-04-15 清华大学 石墨烯光探测器及其制备方法
KR101919425B1 (ko) 2012-10-09 2018-11-19 삼성전자주식회사 그래핀 채널을 포함한 터널링 전계효과 트랜지스터
US9212948B2 (en) 2012-11-07 2015-12-15 The Trustees Of Columbia University In The City Of New York Lossless hyperspectral imaging
US8927964B2 (en) * 2012-11-20 2015-01-06 Nokia Corporation Photodetection
US20160172527A1 (en) * 2012-12-03 2016-06-16 Sandia Corporation Photodetector with Interdigitated Nanoelectrode Grating Antenna
US9293627B1 (en) * 2012-12-03 2016-03-22 Sandia Corporation Sub-wavelength antenna enhanced bilayer graphene tunable photodetector
WO2014089454A2 (en) * 2012-12-07 2014-06-12 The Trustees Of Columbia University In The City Of New York Systems and methods for graphene photodetectors
KR101399195B1 (ko) 2012-12-11 2014-05-27 경희대학교 산학협력단 가변 에너지 그래핀 발광 투과 트랜지스터
WO2014100723A1 (en) * 2012-12-21 2014-06-26 The Regents Of The University Of California Vertically stacked heterostructures including graphene
KR101430650B1 (ko) 2013-01-11 2014-08-19 경희대학교 산학협력단 광검출 소자
GB201300695D0 (en) * 2013-01-15 2013-02-27 Univ Exeter The Graphene deposition enquiry
US10620431B2 (en) * 2013-01-29 2020-04-14 The Trustees Of Columbia University In The City Of New York System, method and computer-accessible medium for depth of field imaging for three-dimensional sensing utilizing a spatial light modulator microscope arrangement
KR101541529B1 (ko) 2013-02-26 2015-08-05 서울대학교산학협력단 그래핀 소자 및 그의 제조방법
US9680038B2 (en) * 2013-03-13 2017-06-13 The Regents Of The University Of Michigan Photodetectors based on double layer heterostructures
JP6161554B2 (ja) * 2013-04-26 2017-07-12 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
US8901689B1 (en) 2013-05-10 2014-12-02 International Business Machines Corporation Graphene photodetector
KR101481000B1 (ko) * 2013-05-13 2015-01-14 경희대학교 산학협력단 그래핀 양자점 광 검출기 및 이의 제조 방법
CN103258895B (zh) * 2013-05-16 2015-09-16 东南大学 带有底栅控电极的平面电子发射光探测器
TWI493739B (zh) * 2013-06-05 2015-07-21 Univ Nat Taiwan 熱載子光電轉換裝置及其方法
JP2015031666A (ja) * 2013-08-06 2015-02-16 日本電信電話株式会社 センサ素子
JP6455910B2 (ja) * 2013-09-04 2019-01-23 公立大学法人首都大学東京 赤外線受光素子
KR101652037B1 (ko) * 2013-10-02 2016-08-29 한국기계연구원 유연 소자의 광전도성 측정 장치
CN103531655A (zh) * 2013-10-28 2014-01-22 鲍桥梁 一种与硅光波导集成的石墨烯异质结光探测器
CN103531665A (zh) * 2013-10-28 2014-01-22 鲍桥梁 与硅光波导集成的石墨烯异质结光探测器的制备方法
KR102189605B1 (ko) * 2014-01-06 2020-12-14 한국전자통신연구원 광검출기
CN103811568B (zh) * 2014-02-21 2016-04-20 中国科学院半导体研究所 一种基于一维光栅的表面入射石墨烯光电探测器
CN103901638B (zh) * 2014-04-22 2016-06-08 电子科技大学 具有四层石墨烯结构的光调制器
CN103956402B (zh) * 2014-05-14 2016-03-30 合肥工业大学 一种自驱动高速肖特基结近红外光电探测器及其制备方法
CN104062676A (zh) * 2014-05-29 2014-09-24 中国空间技术研究院 基于石墨烯电场效应的x射线和带电粒子探测器及探测方法
US9812603B2 (en) * 2014-05-30 2017-11-07 Klaus Y. J. Hsu Photosensing device with graphene
US9812604B2 (en) * 2014-05-30 2017-11-07 Klaus Y. J. Hsu Photosensing device with graphene
KR101548681B1 (ko) 2014-06-17 2015-09-01 성균관대학교산학협력단 광 검출 소자 및 제조 방법
TWI573257B (zh) 2014-06-27 2017-03-01 友達光電股份有限公司 感測裝置
KR102266615B1 (ko) 2014-11-17 2021-06-21 삼성전자주식회사 전계 효과 트랜지스터를 포함하는 반도체 소자 및 그 제조 방법
US9859513B2 (en) 2014-11-25 2018-01-02 University Of Kentucky Research Foundation Integrated multi-terminal devices consisting of carbon nanotube, few-layer graphene nanogaps and few-layer graphene nanoribbons having crystallographically controlled interfaces
TWI509230B (zh) * 2014-12-25 2015-11-21 Univ Nat Cheng Kung 石墨烯光電能量感測器及使用其之光電能量感測方法
KR102412965B1 (ko) * 2014-12-30 2022-06-24 삼성전자주식회사 2차원 물질층을 포함하는 전자소자 및 잉크젯 프린팅을 이용한 전자소자의 제조방법
US10068934B2 (en) * 2015-01-28 2018-09-04 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array
US9945728B2 (en) * 2015-04-03 2018-04-17 Raytheon Bbn Technologies Corp. Graphene-based infrared single photon detector
CN104795410B (zh) * 2015-04-15 2017-10-31 重庆大学 基于光波导的石墨烯纳米带阵列太赫兹传感器
KR102238110B1 (ko) 2015-04-20 2021-04-12 한국전자통신연구원 광검출기
CN104867817A (zh) * 2015-05-21 2015-08-26 北京工业大学 一种薄膜平面化的半导体工艺
ES2808826T3 (es) * 2015-06-10 2021-03-02 Fundacio Inst De Ciencies Fotòniques Sensor de imagen, sistema optoelectrónico que comprende dicho sensor de imagen y método de fabricación de dicho sensor de imagen
US9933310B2 (en) 2015-06-17 2018-04-03 Raytheon Bbn Technologies Corp. Graphene-based infrared bolometer
US9799817B2 (en) 2015-06-18 2017-10-24 Raytheon Bbn Technologies Corp. Josephson junction readout for graphene-based single photon detector
JP6401667B2 (ja) * 2015-06-25 2018-10-10 日本電信電話株式会社 光センサ素子
JP2017011209A (ja) 2015-06-25 2017-01-12 株式会社東芝 グラフェン受光素子、およびグラフェン光変調器
KR101687526B1 (ko) * 2015-07-07 2016-12-19 한국원자력연구원 방사선 검출기 및 이의 제조 방법
EP3128742B1 (en) 2015-08-03 2018-05-16 Fundació Institut de Ciències Fotòniques Image sensor with non-local readout circuit and optoelectronic device comprising said image sensor
US10437329B2 (en) 2015-08-03 2019-10-08 Fundació Institut De Ciències Fotòniques Gaze tracking apparatus
KR20170019623A (ko) * 2015-08-12 2017-02-22 고려대학교 산학협력단 광위치 검출기 및 이의 제조 방법
EP3163633B1 (en) 2015-10-28 2021-09-01 Nokia Technologies Oy A light-based sensor apparatus and associated methods
US10097281B1 (en) 2015-11-18 2018-10-09 Hypres, Inc. System and method for cryogenic optoelectronic data link
CN105489693B (zh) * 2015-12-31 2017-09-29 南京大学 基于二维层状薄膜材料p‑g‑n异质结光电子器件
CN105655420B (zh) * 2016-01-12 2017-05-31 浙江大学 石墨烯光吸收特性的玻璃基波导型光电探测器及制备方法
CN105720127A (zh) * 2016-02-05 2016-06-29 浙江大学 基于石墨烯/半导体异质结的多功能发电机及其制造方法
WO2017145299A1 (ja) 2016-02-24 2017-08-31 三菱電機株式会社 電磁波検出器
US9899547B2 (en) 2016-04-25 2018-02-20 International Business Machines Corporation Multi-wavelength detector array incorporating two dimensional and one dimensional materials
CN105826413A (zh) * 2016-06-03 2016-08-03 泰州巨纳新能源有限公司 一种基于复合衬底的石墨烯光电探测器
WO2018005838A1 (en) * 2016-06-30 2018-01-04 The Regents Of The Universtiy Of California Chemically assembled two-dimensional junctions
CN109417106B (zh) * 2016-07-12 2022-04-26 三菱电机株式会社 电磁波检测器以及电磁波检测器阵列
WO2018051739A1 (ja) * 2016-09-13 2018-03-22 ソニー株式会社 電磁波検出素子、電磁波センサ、電子機器及び構造体
US10957810B2 (en) 2017-03-10 2021-03-23 Mitsubishi Electric Corporation Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method
EP3605038B1 (en) 2017-03-22 2023-04-05 Mitsubishi Electric Corporation Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method
CN107104168A (zh) * 2017-04-20 2017-08-29 上海幂方电子科技有限公司 紫外线传感器及其制备方法
WO2018223068A1 (en) * 2017-06-01 2018-12-06 The Regents Of The University Of California Metallo-graphene nanocomposites and methods for using metallo-graphene nanocomposites for electromagnetic energy conversion
CN107394001B (zh) * 2017-06-09 2019-04-09 北京交通大学 一种基于石墨烯的微型超宽带光探测器及其制作方法
JP6918591B2 (ja) * 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
CN107316915B (zh) * 2017-07-04 2019-04-02 中山大学 可见光波段的集成石墨烯二硫化钼的光电探测器及其制备方法
CN107579128B (zh) * 2017-09-04 2019-06-07 北京工业大学 一种基于石墨烯的焦平面成像器件及其制备方法
KR101984398B1 (ko) * 2017-10-13 2019-05-30 건국대학교 산학협력단 배리스터 기반의 광 검출기 및 이를 포함하는 이미지 센서
CN108231803B (zh) * 2017-12-26 2020-08-11 中国电子科技集团公司第五十五研究所 氮化硅光波导器件和石墨烯探测器集成芯片及其制作方法
KR102088244B1 (ko) * 2018-02-05 2020-03-12 고려대학교 산학협력단 무전력 화학물질 감지센서 및 센싱방법
EP3764407B1 (en) 2018-03-06 2022-02-16 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array equiped with same
WO2019171622A1 (ja) 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
US10741707B2 (en) 2018-03-23 2020-08-11 International Business Machines Corporation Graphene-contacted nanotube photodetector
CN110323266B (zh) * 2018-03-28 2021-03-30 华为技术有限公司 石墨烯场效应晶体管
US11757055B2 (en) 2018-06-26 2023-09-12 Mitsubishi Electric Corporation Electromagnetic wave detector, and electromagnetic wave detector array
CN108899388B (zh) * 2018-06-29 2020-02-14 华中科技大学 一种硅基石墨烯光电探测器
CN109119507B (zh) * 2018-09-05 2020-06-12 南京大学 一种基于集成电路工艺的石墨烯红外探测器制备方法
JP7260736B2 (ja) 2018-11-08 2023-04-19 富士通株式会社 光検出素子、光センサ、及び光検出素子の製造方法
EP3691253B1 (en) * 2019-01-31 2023-11-15 Fundació Institut de Ciències Fotòniques Charge sensing device with readout of signal by detecting a change of capacitance of combined gate and quantum capacitance compared to a reference capacitancea
GB201902971D0 (en) * 2019-03-06 2019-04-17 Cambridge Entpr Ltd Transmitters and receivers
US11908901B1 (en) 2019-03-14 2024-02-20 Regents Of The University Of Minnesota Graphene varactor including ferroelectric material
CN110221385B (zh) * 2019-05-17 2020-09-01 天津大学 一种基于石墨烯的波导集成的多模电光调制器及制作方法
WO2020251517A1 (en) 2019-06-08 2020-12-17 Hewlett-Packard Development Company, L.P. Coatings for optical drop detectors
US10903396B1 (en) 2019-08-20 2021-01-26 International Business Machines Corporation Layered material based quantum light emitting device
US20220399466A1 (en) * 2019-09-30 2022-12-15 Keio University Graphene photodetector and photodetector array using same
CN114846628B (zh) * 2019-12-17 2025-02-18 三菱电机株式会社 电磁波检测器以及电磁波检测器集合体
KR102778198B1 (ko) 2020-01-07 2025-03-10 삼성전자주식회사 광 검출 소자 및 이를 포함하는 광 시스템
CN111081806B (zh) * 2020-01-13 2025-09-09 中国科学院重庆绿色智能技术研究院 一种基于超短沟道石墨烯的光电探测器及其制备方法
JP7338491B2 (ja) * 2020-01-27 2023-09-05 富士通株式会社 光センサ装置
DE202020101285U1 (de) * 2020-03-09 2021-06-17 Gesellschaft für angewandte Mikro- und Optoelektronik mit beschränkter Haftung - AMO GmbH Photodetektor, Modulator, Halbleitereinrichtung und Halbleitervorrichtung
JP7505239B2 (ja) * 2020-04-09 2024-06-25 富士通株式会社 光センサ、及びこれを用いた撮像装置
CN111599889A (zh) * 2020-05-25 2020-08-28 华南师范大学 一种自驱动光电探测器及其光通信系统
JP7477766B2 (ja) * 2020-09-25 2024-05-02 富士通株式会社 光検出装置
CN112331728B (zh) * 2021-01-06 2021-03-16 武汉敏芯半导体股份有限公司 一种基于低维材料的波导晶体管探测器及其制备方法
CN115440831A (zh) * 2021-06-03 2022-12-06 北京华碳元芯电子科技有限责任公司 一种光电探测器及其制作方法
CN115265769B (zh) * 2022-05-13 2023-09-29 中国科学院紫金山天文台 太赫兹石墨烯约瑟夫森结探测系统
CN115458615B (zh) * 2022-10-13 2025-11-11 中山大学 一种双门压调控的近红外光电探测器及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101385126A (zh) * 2006-02-16 2009-03-11 卢森特技术有限公司 包括外延生长在单晶衬底上的石墨烯层的器件

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5679479A (en) * 1979-12-03 1981-06-30 Shunpei Yamazaki Photoelectric conversion device
EP0063421B1 (en) * 1981-04-20 1987-05-06 Hughes Aircraft Company High speed photoconductive detector
GB2168527B (en) * 1984-12-15 1988-11-16 Stc Plc Photo-detector
US5514885A (en) * 1986-10-09 1996-05-07 Myrick; James J. SOI methods and apparatus
JP3162424B2 (ja) * 1991-05-27 2001-04-25 キヤノン株式会社 導波型光検出器及びその作製方法
US6559376B2 (en) * 1996-09-30 2003-05-06 Nology Engineering, Inc. Combustion initiation device and method for tuning a combustion initiation device
DE19905694A1 (de) 1998-11-27 2000-08-17 Forschungszentrum Juelich Gmbh Bauelement
US6833980B1 (en) * 1999-05-10 2004-12-21 Hitachi, Ltd. Magnetoelectric device
US7250642B2 (en) * 2004-07-29 2007-07-31 Matsushita Electric Industrial Co., Ltd. Field-effect transistor
US8003979B2 (en) * 2006-02-10 2011-08-23 The Research Foundation Of State University Of New York High density coupling of quantum dots to carbon nanotube surface for efficient photodetection
EP2041815A2 (en) * 2006-07-18 2009-04-01 The University Of Southern California Organic optoelectronic device electrodes with nanotubes
JP2008052076A (ja) * 2006-08-25 2008-03-06 Fujifilm Corp ガラス
US8431818B2 (en) * 2007-05-08 2013-04-30 Vanguard Solar, Inc. Solar cells and photodetectors with semiconducting nanostructures
US7732859B2 (en) * 2007-07-16 2010-06-08 International Business Machines Corporation Graphene-based transistor
KR101384665B1 (ko) * 2007-09-13 2014-04-15 성균관대학교산학협력단 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지
US20090174435A1 (en) * 2007-10-01 2009-07-09 University Of Virginia Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits
US20100132771A1 (en) * 2008-10-06 2010-06-03 The Regents Of The University Of California 3D Carbon Nanotubes Membrane as a Solar Energy Absorbing Layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101385126A (zh) * 2006-02-16 2009-03-11 卢森特技术有限公司 包括外延生长在单晶衬底上的石墨烯层的器件

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Gate-Variable Optical Transitions in Graphene;Feng Wang et al.;<SCIENCE>;20080411;第320卷(第5873期);208页第三栏第三段 *
photocurrent imaging and efficient photon detection in a grapheme transistor;Fengnian Xia et al.;<NANO LETTERS>;20090209;第9卷(第3期);1039页摘要，第二栏，1040页第二栏，1043页第2栏 *

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