CN102473450B - 具有带垂直磁化取向的基准层的磁性叠层 - Google Patents

具有带垂直磁化取向的基准层的磁性叠层 Download PDF

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CN102473450B
CN102473450B CN201080032404.9A CN201080032404A CN102473450B CN 102473450 B CN102473450 B CN 102473450B CN 201080032404 A CN201080032404 A CN 201080032404A CN 102473450 B CN102473450 B CN 102473450B
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ferromagnetism
magnetization orientation
ferromagnetism pinning
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CN102473450A (zh
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Z·袁凯
G·郑
Z·文忠
J·文俊
X·海文
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Abstract

一种磁性单元(10)包括具有自由磁化取向(MF)的铁磁性自由层(18)以及具有第一基准磁化取向(MR1)的第一铁磁性钉扎基准层(14)，该第一基准磁化取向(MR1)平行于或逆平行于自由磁化取向。第一氧化物阻挡层(16)位于铁磁性自由层和第一铁磁性钉扎基准层之间。磁性单元还包括具有第二基准磁化取向(MR2)的第二铁磁性钉扎基准层(13)，该第二基准磁化取向(MR2)垂直于第一基准磁化取向。铁磁性自由层位于第一铁磁性钉扎基准层和第二铁磁性钉扎基准层之间。

Description

具有带垂直磁化取向的基准层的磁性叠层
背景技术
也称为自旋电子学的自旋扭矩转移技术结合半导体技术与磁力学并且是最近研发的。在自旋电子学中，电子而非电荷的自旋被用来指示数字信息的存在。表示为“0”或“1”的数字信息或数据可存储在磁性元件内的磁矩排列中。磁性元件的阻抗取决于磁矩的排列或取向。通过检测组件的阻态从元件读出所存储的状态。
磁性元件一般包括铁磁性钉扎层和铁磁性自由层，每个层具有限定整个磁性元件阻抗的磁化方向。这种元件通常被称作“自旋隧穿结”、“磁性隧穿结”、“磁性隧穿结单元”等。当自由层与钉扎层的磁化方向平行时，元件的阻抗低。当自由层与被钉扎层的磁化方向逆平行时，元件的阻抗高。
自旋扭矩转移存储器的应用具有大致在106至107A/cm2的切换电流密度需求，这导致难以与常规CMOS工艺结合。要求显著降低切换电流密度，以制造出可行的产品。已作出各种尝试。
然而，在切换电流和自旋扭矩转移单元的数据稳定性之间存在两难选择。由于自旋扭矩转移单元的热不稳定性，低切换电流可能降低数据保持性。需要可既获得低切换电流又具有足够数据保持性的自旋扭矩转移单元设计。
发明内容
本公开涉及磁性单元，例如自旋扭矩存储单元，所述磁性单元具有磁性的两个基准层或元件，所述两个基准层或元件具有垂直的磁化取向。这些自旋扭矩存储单元在高阻数据状态和低阻数据状态之间快速切换并包括在两个氧化物阻挡层之间的自由磁性层。两个基准层是垂直对准的。
在本公开的一个实施例中披露了一种磁性单元，该磁性单元包括具有自由磁化取向的铁磁性自由层以及具有第一基准磁化取向的第一铁磁性钉扎基准层，该第一基准磁化取向平行于或逆平行于自由磁化取向。第一氧化物阻挡层位于铁磁性自由层和第一铁磁性钉扎基准层之间。磁性单元还包括具有第二基准磁化取向的第二铁磁性钉扎基准层，该第二基准磁化取向垂直于第一基准磁化取向。铁磁性自由层位于第一铁磁性钉扎基准层和第二铁磁性钉扎基准层之间。
通过阅读以下详细描述，这些以及各个其他特征和优点将是显而易见的。
附图简述
考虑以下结合附图对本公开的各个实施例的详细描述，可更完整地理解本公开，在附图中：
图1A是处于低阻数据状态并具有垂直基准层磁化取向的磁性单元的示意性侧视图；
图1B是处于高阻数据状态并具有垂直基准层磁化取向的磁性单元的示意性侧视图；
图2是包括存储单元和半导体晶体管的示例性存储元件的示意图；
图3是解说性存储器阵列的示意图；
图4是具有垂直基准层磁化取向的另一磁性单元的示意性侧视图；以及
图5是具有垂直基准层磁化取向的另一磁性单元的示意性侧视图。
这些附图不一定按比例示出。附图中所使用的相同数字表示相同组件。然而，应当理解，在给定附图中使用数字表示组件并不旨在限制在另一附图中用相同数字标记的组件。
详细描述
本公开针对磁性叠层或单元(例如自旋扭矩存储(STRAM)单元)，该磁性叠层或单元具有带垂直的磁化取向的两个磁性基准层或元件。这些自旋扭矩存储单元在高阻数据状态和低阻数据状态之间快速切换并包括在两个氧化物阻挡层之间的自由磁性层。两个基准层是垂直对准的。相比不具有垂直对准的基准层的传统数据单元，这种数据单元结构增加了写入速度并提高了数据单元的隧穿磁阻比。
在以下描述中，参考形成本说明书一部分的一组附图，其中通过解说示出了若干具体实施例。应当理解，可构想并可作出其他实施例而不背离本公开的范围或精神。因此，以下详细描述不具有限制性含义。本文中所提供的任何定义有助于理解本文中频繁使用的某些术语，而不旨在限制本公开的范围。
除非另外指示，否则在说明书和权利要求书中使用的表示特征大小、量和物理性质的所有数字应当理解为在任何情况下均由术语“大约”修饰。因此，除非相反地指出，否则在上述说明书和所附权利要求中阐述的数值参数是近似值，这些近似值可利用本文中公开的教示根据本领域技术人员所寻求获得的期望性质而变化。
如本说明书和所附权利要求书中所使用的，单数形式“一”、“一个”和“该”涵盖具有复数引用物的实施例，除非该内容另外明确地指出。如本说明书和所附权利要求书中所使用的，术语“或”一般以包括“和/或”的含义来使用，除非该内容另外明确地指出。
要注意，诸如“顶”、“底”、“之上”、“之下”等术语可在本公开中使用。这些术语不应当解释为限制结构的位置或方向，而是应当用来提供结构之间的空间关系。
尽管本公开不限于此，但通过讨论以下所提供的示例将获得对本公开的各个方面的理解。
图1A是处于低阻数据状态并具有垂直基准层磁化取向的磁性单元10的示意性侧视图。图1B是处于高阻数据状态并具有垂直基准层磁化取向的磁性单元10的示意性侧视图。磁性隧穿结单元10包括具有第一基准磁化取向MRR1的第一铁磁性钉扎基准层或元件14、具有自由磁化取向MF的铁磁性自由元件或层18以及将第一铁磁性钉扎基准磁性元件14与铁磁性自由元件18分离的第一隧穿阻挡层16。第二铁磁性钉扎基准层或元件13具有第二基准磁化取向MR2，该第二基准磁化取向MR2垂直于第一基准磁化取向MR1。铁磁性自由层位于第一铁磁性钉扎基准层14和第二铁磁性钉扎基准层13之间。在许多实施例中，第二隧穿阻挡层15将第二铁磁性钉扎基准磁性元件13与铁磁性自由元件18隔开。
这些元件或层电气地设置在第一电极13和第二电极19之间。尽管示出了单个磁性隧穿结单元10，然而要理解多个磁性隧穿结单元10可配置成阵列以形成存储器阵列。为了清楚起见，附图中不绘出例如籽晶层或覆盖层的其它层。
铁磁性自由元件18具有自由磁化取向MF，该自由磁化取向MF可在高阻数据状态(即相对于第一铁磁性钉扎基准磁性元件14磁化取向MR1的逆平行方向且如图1B所示)和低阻数据状态(即相对于第一铁磁性钉扎基准磁性元件14磁化取向MR1的平行方向且如图1A所示)之间切换。铁磁性自由元件或层18、第一铁磁性钉扎基准磁性元件14以及第二铁磁性钉扎基准磁性元件13具有面内磁各向异性。
尽管第一铁磁性钉扎基准元件14图示为单个层，然而要理解，该元件14可包括两个或更多个层，例如铁磁性基准(钉扎)层和反铁磁性基准(钉扎层)，其中反铁磁性基准层用来固定铁磁性基准层的磁化。在其它实施例中，第一铁磁性钉扎基准元件14包括反铁磁性地彼此耦合(的一个以上铁磁性层(例如合成的反铁磁体)。铁磁性基准层可由例如包含Co、Fe和/或Ni的合金和物质的任何有用材料形成。诸如CoFeB的三元合金可能尤为有用，因为它们具有较低磁矩与高极化比，这些对于自旋电流切换而言是合乎要求的。反铁磁性基准层可由例如IrMn、FeMn和/或PtMn的任何有用材料形成。
尽管第二铁磁性钉扎基准元件13图示为单个层，然而要理解，该元件13可包括两个或更多个层，例如铁磁性基准(钉扎)层和反铁磁性基准(钉扎)层，其中反铁磁性基准层用来固定铁磁性基准层的磁化。在其它实施例中，第二铁磁性钉扎基准元件13包括反铁磁性地彼此耦合(例如合成的反铁磁体)的一个以上铁磁性层。铁磁性基准层可由例如包含Co、Fe和/或Ni的合金和物质的任何有用材料形成。诸如CoFeB之类的三元合金可能尤为有用，因为它们具有较低磁矩与高极化比，这些对于自旋电流切换而言是合乎要求的。反铁磁性基准层可由例如IrMn、FeMn和/或PtMn的任何有用材料形成。
铁磁性自由元件18可由任何有用的软磁材料形成，所述软磁材料允许铁磁性自由元件18的磁化取向在第一磁化取向和相反的第二磁化取向之间切换。在许多实施例中，铁磁性自由元件18由例如Co65Fe30B15并在例如1200-500emu/cc的范围内具有磁饱和的CoFeB材料形成。第一磁化取向可平行于第一铁磁性钉扎基准元件14的磁化取向，由此形成低阻数据状态或“0”数据状态。第二磁化取向可逆平行于第一铁磁性钉扎基准元件14的磁化取向，由此形成高阻数据状态或“1”数据状态。铁磁性自由层可由任何有用材料形成，例如包括Co、Fe和/或Ni的合金材料。诸如CoFeB的三元合金可能尤为有用，因为它们具有较低磁矩与高极化比，这些对于自旋电流切换而言是合乎要求的。因此铁磁性自由元件18可因由流过磁性单元10的电流诱发的自旋力矩转移而切换。
第一和第二隧穿或氧化物阻挡层15、16是电绝缘和非磁性的材料。隧穿或氧化物阻挡层15、16可由任何可用的电绝缘和非磁性材料形成，例如AlO、MgO、和/或TiO。在一些实施例中，氧化物阻挡层15、16具有约0.5-2nm的厚度。
电极13、19将磁性隧穿结单元10连接于控制电路，该控制电路通过磁性隧道结单元10提供读和写电流。磁性隧穿结单元10两侧的阻抗是由磁化矢量的相对取向和铁磁性层14、18的磁化取向确定的。当电流流过磁性隧穿结单元10时，铁磁性钉扎基准层14、13的磁化方向被钉扎在预定方向，而铁磁性自由层18的磁化方向在自旋扭矩影响下自由旋转。
当流过磁性隧穿结单元10的磁性层的电流变为自旋极化的并将自旋扭矩作用在磁性隧穿结单元10的铁磁性自由层18时，通过自旋扭矩转移而切换电阻状态并因此切换磁性隧穿结单元10的数据状态发生。当将足够的自旋扭矩(足以克服能垒E)作用于铁磁性自由层18时，非铁磁性自由层18的磁化取向可在两相反的方向上切换并因此磁性隧穿结单元10可在平行状态(即低阻态或“0”数据状态)和逆平行状态(即高阻态或“1”数据状态)之间切换。
图2是包含存储单元20和半导体晶体管22的解说性存储单元的示意图。存储单元20包括磁性隧穿结单元10。
图3是解说性存储器阵列30的示意图。存储器阵列30包括形成交叉点阵列的多个字线WL和多个位线BL。在每个交叉点，如这里描述的存储单元10电耦合于字线WL和位线BL。选择器件(未示出)可处于各交叉点或处于各字线WL和位线BL。
图4是具有垂直基准层磁化取向的另一磁性单元40的示意性侧视图。磁性隧穿结单元40包括具有第一基准磁化取向的第一铁磁性钉扎基准层或元件14、具有自由磁化取向的铁磁性自由元件或层18以及将第一铁磁性钉扎基准磁性元件14与铁磁性自由元件18分离的第一隧穿阻挡层16。第二铁磁性钉扎基准层或元件13具有第二基准磁化取向，该第二基准磁化取向垂直于第一基准磁化取向。铁磁性自由层18位于第一铁磁性钉扎基准层14和第二铁磁性钉扎基准层13之间。在许多实施例中，第二隧穿阻挡层15将第二铁磁性钉扎基准磁性元件13与铁磁性自由元件18隔开。
这些元件或层电气地设置在第一电极13和第二电极19之间。尽管示出了单个磁性隧穿结单元10，然而要理解多个磁性隧穿结单元10可配置成阵列以形成存储器阵列。为了清楚起见，附图中不绘出例如籽晶层或覆盖层的其它层。
第一铁磁性钉扎基准层或元件14包括第一合成反铁磁性元件SAF1和第一反铁磁性基准(钉扎)层AFM1。第一合成的反铁磁性元件SAF1包括反铁磁性耦合的并由非磁性和导电间隔层SP1隔开的两个铁磁性层FM1、FM2。第二铁磁性钉扎基准层或元件13包括第二合成反铁磁性元件SAF2和第二反铁磁性基准(钉扎)层AFM2。第二合成的反铁磁性元件SAF2包括反铁磁性耦合的并由非磁性和导电间隔层SP2隔开的两个铁磁性层FM3、FM4。
在许多实施例中，第一反铁磁性基准(钉扎)层AFM1具有与第二反铁磁性基准(钉扎)层AFM2不同的材料成份。第一反铁磁性基准(钉扎)层AFM1可具有比第二反铁磁性基准(钉扎)层AFM2更高的阻挡温度。因此，第一铁磁性钉扎基准层或元件14可将其磁化取向设定在比之后形成的第二铁磁性钉扎基准层或元件13更高的温度下。然后，第二铁磁性钉扎基准层或元件13可将其磁化取向设定在比之前形成的第一铁磁性钉扎基准层或元件14更低的温度下。
图5是具有垂直基准层磁化取向的另一磁性单元50的示意性侧视图。磁性隧穿结单元50包括具有第一基准磁化取向的第一铁磁性钉扎基准层或元件14、具有自由磁化取向的铁磁性自由元件或层18以及将第一铁磁性钉扎基准磁性元件14与铁磁性自由元件18分离的第一隧穿阻挡层16。第二铁磁性钉扎基准层或元件13具有第二基准磁化取向，该第二基准磁化取向垂直于第一基准磁化取向。铁磁性自由层18位于第一铁磁性钉扎基准层14和第二铁磁性钉扎基准层13之间。在许多实施例中，第二隧穿阻挡层15将第二铁磁性钉扎基准磁性元件13与铁磁性自由元件18隔开。
这些元件或层电气地设置在第一电极13和第二电极19之间。尽管示出了单个磁性隧穿结单元10，然而要理解多个磁性隧穿结单元10可配置成阵列以形成存储器阵列。为了清楚起见，附图中不绘出例如籽晶层或覆盖层之类的其它层。
第一铁磁性钉扎基准层或元件14包括第一合成反铁磁性元件SAF1和反铁磁性基准(钉扎)层AFM。第一合成的反铁磁性元件SAF1包括反铁磁性耦合的并由非磁性和导电间隔层SP1隔开的两个铁磁性层FM1、FM2。第二铁磁性钉扎基准层或元件13包括第二合成反铁磁性元件SAF2和永磁体PM。第二合成的反铁磁性元件SAF2包括反铁磁性耦合的并由非磁性和导电间隔层SP2隔开的两个铁磁性层FM3、FM4。第一铁磁性钉扎基准层或元件14的磁化取向可通过磁性设定退火来设定，而第二铁磁性钉扎基准层或元件13的磁化取向可通过永磁体PM来设定。
本公开的各种结构可通过薄膜技术制成，例如化学汽相沉积(CVD)、物理汽相沉积(PVD)、溅射沉积以及原子层沉积(ALD)。
由此，披露了具有带垂直磁化取向的基准层的磁性叠层的实施例。上述实现及其他实现在以下权利要求书的范围内。本领域技术人员应当理解，本公开可通过除所披露的实施例以外的实施例来实施。出于说明而非限制目的给出了所公开的实施例，且本发明仅受限于所附权利要求。
在下面权利要求书中使用数字表示，例如“第一”、“第二”等是为了标识和提供在前基础。除非内容明确表示相反情形，否则不应当认为数字表示意指这一数目的这类要素必须在设备、系统或装置中出现。例如，如果设备包括第一层，这并不意味着该设备中一定就要有第二层。

Claims (17)

1.一种磁性单元，包括：
具有自由磁化取向的铁磁性自由层；
第一铁磁性钉扎基准层，所述第一铁磁性钉扎基准层具有与所述自由磁化取向平行或逆平行的第一基准磁化取向；
位于所述铁磁性自由层和所述第一铁磁性钉扎基准层之间的第一氧化物阻挡层；以及
第二铁磁性钉扎基准层，所述第二铁磁性钉扎基准层具有与所述第一基准磁化取向垂直的第二基准磁化取向，所述铁磁性自由层位于所述第一铁磁性钉扎基准层和所述第二铁磁性钉扎基准层之间，
其中所述第二铁磁性钉扎基准层包括永磁体。
2.如权利要求1所述的磁性单元，其特征在于，所述铁磁性自由层、第一铁磁性钉扎基准层和第二铁磁性钉扎基准层具有面内的磁各向异性。
3.如权利要求1所述的磁性单元，其特征在于，还包括位于所述铁磁性自由层和所述第二铁磁性钉扎基准层之间的第二氧化物阻挡层。
4.如权利要求1所述的磁性单元，其特征在于，所述第一铁磁性钉扎基准层包括合成的反铁磁性元件。
5.如权利要求1所述的磁性单元，其特征在于，所述第二铁磁性钉扎基准层包括合成的反铁磁性元件。
6.如权利要求1所述的磁性单元，其特征在于，所述铁磁性自由层由于流过所述磁性单元的电流诱发的自旋扭矩转移而在高阻数据状态和低阻数据状态之间切换。
7.如权利要求1所述的磁性单元，其特征在于，所述第一铁磁性钉扎基准层包括具有第一阻挡温度的合成的反铁磁性元件，而所述第二铁磁性钉扎基准层包括具有第二阻挡温度的合成的反铁磁性元件，其中所述第二阻挡温度低于所述第一阻挡温度。
8.如权利要求1所述的磁性单元，其特征在于，所述自由磁化取向垂直于所述第二基准磁化取向。
9.一种自旋扭矩转移磁性单元，包括：
具有面内自由磁化取向的铁磁性自由层，所述铁磁性自由层由于流过所述磁性单元的电流诱发的自旋扭矩转移而在高阻数据状态和低阻数据状态之间切换；
第一铁磁性钉扎基准层，所述第一铁磁性钉扎基准层具有与所述自由磁化取向平行或逆平行的第一基准磁化取向；
位于所述铁磁性自由层和所述第一铁磁性钉扎基准层之间的第一氧化物阻挡层；
第二铁磁性钉扎基准层，所述第二铁磁性钉扎基准层具有与所述自由磁化取向垂直的面内第二基准磁化取向；以及
位于所述铁磁性自由层和所述第二铁磁性钉扎基准层之间的第二氧化物阻挡层，
其中所述第二铁磁性钉扎基准层包括永磁体。
10.如权利要求9所述的自旋扭矩转移磁性单元，其特征在于，所述第一铁磁性钉扎基准层包括合成的反铁磁性元件。
11.如权利要求9所述的自旋扭矩转移磁性单元，其特征在于，所述第二铁磁性钉扎基准层包括合成的反铁磁性元件。
12.如权利要求9所述的自旋扭矩转移磁性单元，其特征在于，所述第一铁磁性钉扎基准层包括具有第一阻挡温度的合成的反铁磁性元件，而所述第二铁磁性钉扎基准层包括具有第二阻挡温度的合成的反铁磁性元件，其中所述第二阻挡温度低于所述第一阻挡温度。
13.如权利要求9所述的自旋扭矩转移磁性单元，其特征在于，所述自由磁化取向垂直于所述第二基准磁化取向。
14.一种自旋扭矩转移磁性单元，包括：
具有面内自由磁化取向的铁磁性自由层，所述铁磁性自由层由于流过所述磁性单元的电流诱发的自旋扭矩转移而在高阻数据状态和低阻数据状态之间切换；
第一铁磁性钉扎基准层，所述第一铁磁性钉扎基准层具有与所述自由磁化取向平行或逆平行的第一基准磁化取向；
位于所述铁磁性自由层和所述第一铁磁性钉扎基准层之间的第一氧化物阻挡层；
第二铁磁性钉扎基准层，所述第二铁磁性钉扎基准层具有与所述第一基准磁化取向垂直的面内第二基准磁化取向；以及
位于所述铁磁性自由层和所述第二铁磁性钉扎基准层之间的第二氧化物阻挡层，
其中所述第二铁磁性钉扎基准层包括永磁体。
15.如权利要求14所述的自旋扭矩转移磁性单元，其特征在于，所述第一铁磁性钉扎基准层包括合成的反铁磁性元件。
16.如权利要求14所述的自旋扭矩转移磁性单元，其特征在于，所述第二铁磁性钉扎基准层包括合成的反铁磁性元件。
17.如权利要求14所述的自旋扭矩转移磁性单元，其特征在于，所述第一铁磁性钉扎基准层包括具有第一阻挡温度的合成的反铁磁性元件，而所述第二铁磁性钉扎基准层包括具有第二阻挡温度的合成的反铁磁性元件，其中所述第二阻挡温度低于所述第一阻挡温度。
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