CN102468285A - 使用烧结晶片贴附的功率模块及其制造方法 - Google Patents

使用烧结晶片贴附的功率模块及其制造方法 Download PDF

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CN102468285A
CN102468285A CN2011100295697A CN201110029569A CN102468285A CN 102468285 A CN102468285 A CN 102468285A CN 2011100295697 A CN2011100295697 A CN 2011100295697A CN 201110029569 A CN201110029569 A CN 201110029569A CN 102468285 A CN102468285 A CN 102468285A
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power model
sintering
substrate
wafer
attaches
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金泰贤
朱龙辉
崔硕文
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication of CN102468285A publication Critical patent/CN102468285A/zh
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Abstract

在此公开了一种使用烧结晶片贴附的功率模块及该功率模块的制造方法。该功率模块包括：基板，其具有形成在金属板的表面上的绝缘层；电路层，其形成在基板上，并包括布线图案和电极图案；安装在布线图案上的器件；烧结晶片贴附层，其在所述布线图案和所述器件之间应用金属膏，并将该金属膏烧结以将所述布线图案键合到所述器件上；以及引线框，其将所述器件电连接到所述电极图案上，从而能够简化并方便了工艺，增加了电效率并改善了辐射特性，以及制造了牢固可靠的功率模块。

Description

使用烧结晶片贴附的功率模块及其制造方法
相关申请的交叉引用
本申请要求于2010年11月2日提交的、题为“Power Module UsingSintering Die Attach And Manufacturing Method Thereof”的韩国专利申请No.10-2010-0108340的权益，该申请的全部内容通过引用并入到本申请中。
技术领域
本发明涉及使用烧结晶片贴附(sintering die attach)的功率模块及该功率模块的制造方法。
背景技术
现有的功率模块通过将绝缘栅双极晶体管(IGBT)、二极管芯片等键合(bond)到铜(Cu)引线框上或直接键合铜(DBC)基板上并通过铝(Al)导线键合方法将其电连接在基板与外壳之间而被制造。
这时，使用Sn基焊料将芯片键合到基板上。
所以，IGBT和二极管芯片的下部由诸如可以很容易得被焊接的银(Ag)和金(Au)之类的金属制成，以及使用诸如铜(Cu)、镍(Ni)等金属来完成所述基板。
然而，由于基于锡(Sn)的低导热性(＜60W/m.k)、金属间接触(IMC)的形成以及材料本身的低可靠性，现有的芯片键合方法很难应用到高功率电子器件模块。
另外，现有的芯片键合方法由于低辐射特性还具有效率降低的问题。
同时，在功率模块中，在使用功率模块时生成的大部分的热通过芯片的下部被释放到基板上。
如上所述，为了通过基板辐射热，在芯片和基板之间的键合材料应该具有极好的辐射特性。
如果由于长期使用功率模块而在芯片的下部出现裂缝，则会导致辐射特性的降低，从而，也会导致器件出现故障，继而造成经济损失。
发明内容
做出本发明以致力于提供一种使用具有高的电气效率和极好的辐射特性的烧结晶片贴附(sintering die attach)的功率模块，及该功率模块的制造方法。
根据本发明的优选实施方式，提供了一种使用烧结晶片贴附的功率模块，该功率模块包括：基板，其具有形成在金属板的表面上的绝缘层；电路层，其形成在基板上并包括布线图案和电极图案；安装在布线图案上的器件；烧结晶片贴附层，其在布线图案和所述器件之间应用金属膏并对该金属膏进行烧结以将所述布线图案键合到所述器件上；以及引线框，其将所述器件电连接到电极图案上。
所述基板可以是阳极氧化金属基板(AMS)。
金属板可以是铝(Al)、铝(Al)合金和铜(Cu)中的任意一者。
绝缘层可以是氧化铝(Al2O3)。
所述器件可以是晶圆预处理器件(wafer pretreated device)。
金属板具有7∶3的微米尺寸的金属粉末与纳米尺寸的金属粉末的比率。
金属粉末可以是钛(Ti)、铜(Cu)、镍(Ni)和金(Au)中的至少一者。
使用烧结晶片贴附的功率模块还可以包括焊料键合层，该焊料键合层将所述器件键合到引线框的一端并将电极图案键合到引线框的另一端。
所述器件可以经过晶圆预处理，以使金属膏以5μm到10μm的厚度应用到该器件的下部。
根据本发明的另一个优选实施方式，提供了一种使用烧结晶片贴附的功率模块的制造方法，该制造方法包括：(A)准备基板，该基板通过氧化金属板的表面并使绝缘层形成在金属板的整个表面上而形成；(B)在基板上形成包括布线图案和电极图案的电路层；(C)在将器件安装在布线图案上之后，将金属膏应用到布线图案上以便将布线图案键合到所述器件上，并然后烧结金属膏；以及(D)将所述器件焊接到引线框的一端并将电极图案焊接到引线框的另一端，从而使所述器件与电极图案电连接。
使用烧结晶片贴附的功率模块的制造方法还包括在安装所述器件之前对所述器件执行晶圆预处理。
在步骤(E)，执行晶圆预处理可以包括：准备晶圆基板，多个器件安装在该晶圆基板上；将金属膏以5μm到10μm的厚度应用到晶圆基板的下部，并将金属膏干燥；以及将安装在晶圆基板上的多个器件锯成单独的器件。
步骤(A)可以包括：(A-1)准备金属板；和(A-2)使金属板的表面氧化并在金属板的整个表面上形成绝缘层。
在步骤(B)，可以通过镀覆(plating)法、溅射法和淀积法中的任意一种方法来形成布线图案和电极图案。
在步骤(C)，当将金属板应用到布线图案上时，可以使用丝网印制法(silkscreen method)、金属丝印法(metal screen method)、冲压法(stamping method)和点胶法(dispensing method)中的任意一种方法。
在步骤(C)，金属膏的烧结温度可以在大约250℃到大约300℃之间。
附图说明
图1是根据本发明优选实施方式的使用烧结晶片贴附的功率模块的横截面图；
图2-图8是用于解释根据本发明优选实施方式的使用烧结晶片贴附的功率模块的制造方法的图示。
具体实施方式
根据下面对实施方式的描述并参考附图，本发明的各种目的、优点和特征将会变得显而易见。
本说明书及权利要求书中所使用的术语及词语不应被解释为局限于一般的含义或字典定义，而是应当基于发明人可适当地对术语的概念进行定义以更为适当地对他或她所知的用于执行本发明的最佳方法进行描述这一原则，所述术语及词语应被解释为具有与本发明的技术范围相关的意义及概念。
通过以下结合附图的详细描述，可更为清晰地理解本发明的上述及其他目的、特征以及优点。在说明书中，应该注意的是，在对附图中的组件添加参考标记时，类似的参考标记指代类似的组件，即使这些组件出现于不同附图中。而且，当确定对与本发明相关的公知技术的详细描述可能晦涩本发明的主旨时，可省略对其的详细描述。
下文中，将参考附图，详细描述本发明的优选实施方式。
图1是根据本发明优选实施方式的使用烧结晶片贴附的功率模块的横截面图。
参考图1，根据本发明优选实施方式的使用烧结晶片贴附的功率模块100被配置成包括基板10，该基板10具有金属板11和形成在金属板11的表面上的绝缘层13；电路层20，该电路层20具有形成在基板10上的布线图案21和电极图案23；器件40，该器件40安装在电路层20的布线图案21上；烧结晶片贴附层30，该烧结晶片贴附层30通过在布线图案21与器件40之间应用金属膏并烧结该金属膏而形成，从而将布线图案21键合到器件40上；引线框60，该引线框60将器件40电连接到电极图案23上；以及焊料键合层50，该焊料键合层50将器件40键合到引线框60的一端并将电极图案23键合到引线框60的另一端。
在本实施方式中，当诸如半导体芯片之类的器件40被安装在基板10上时，在通过烧结方法将它们彼此键合时为了执行烧结工艺，基板应该具有高共面性(例如，10μm以内)和极好的硬度(也就是，具有由于压力和温度造成的最小变形)。而且，基板10的上部和下部应该彼此完全相同。
然而，现有技术中主要使用的直接键合铜(DBC)基板和引线框基板中的每一者都具有下面的缺点：
首先，在DBC基板的情况中，虽然DBC基板具有极好的硬度和共面性，但其应该通过使用焊料将辐射板附设到DBC基板的下部上，从而改善导热性。而且，由于器件的下部中的焊料层，导热性降低了，可靠性恶化了。
另一方面，在引线框基板的情况中，很难实现复杂的电路，并且辐射特性不是很好，从而很难被应用到具有高压和高电流的高功率模块。
在本发明的优选实施方式中，使用阳极氧化金属基板(AMS)10，AMS能够弥补DBC基板和引线框基板的缺点。
AMS 10是通过氧化厚金属板11的表面并在金属板11的表面上形成绝缘层13而形成的基板。
通过使用阳极氧化方法等来氧化金属板11的整个表面，绝缘层13被形成为诸如氧化铝(Al2O3)之类的氧化膜。
另外，绝缘层13还可以通过将陶瓷层或环氧层键合到金属板11的整个表面来形成。
作为示例，可以使用铝(Al)、铝(Al)合金、铜(Cu)等作为金属板11。
如上配置的AMS 10不仅具有极好的硬度和共面性，而且还由金属板11制成，从而还具有极好的辐射特性。
包括布线图案21和电极图案23的电路层20以预定厚度和图案形成在AMS 10上，诸如半导体芯片之类的器件40安装于布线图案21上，以及电极图案23电连接到器件40上以从外部向器件40供电。
电路层20以大约1μm的厚度以预定形状通过对钛(Ti)、铜(Cu)、镍(Ni)、金(Au)等进行镀覆、溅射、淀积等而形成在AMS 10上。
在这种情况中，优选可以使用银(Ag)来完成电路层20的最外表面
由于被应用以将器件40安装在布线图案21上的金属膏主要由银(Ag)膏制成，所以这还便于在烧结晶片贴附时的键合。
如上所述，通过将金属膏应用在布线图案21与器件40之间并烧结金属膏而形成烧结晶片贴附层30，从而将布线图案21键合到器件40上，其中烧结温度在大约250℃至大约300℃之间。
其中器件40通过烧结晶片贴附层30被安装在布线图案21上的功率模块100具有比其中器件40通过现有的焊料键合层被安装在布线图案21上的功率模块具有更好的辐射特性。
更具体地，现有的焊料键合层具有大约60W/m.k.的低导热性，而本发明中的烧结晶片贴附层30具有大约250W/m.k.的高导热性，从而还改善了通过烧结晶片贴附30键合的功率模块100的辐射特性。
另外，在通过现有的焊料键合层进行键合时需要大约40Mpa的高压，从而可能会出现绝缘层13损坏或电路层20分离的问题。
然而，在通过根据本发明的烧结晶片贴附层30来键合时，器件40被安装在不需高压按压而被烧结的烧结晶片贴附层30上，从而仅通过使用大约10Mpa到大约20Mpa的压力就能够获得稳定的烧结键合，从而解决了上述问题。
另外，在被烧结而被键合后，烧结晶片贴附层30具有大约900℃的熔点，与纯银(Ag)的熔点相似。
如果布线图案21通过烧结晶片贴附层30被键合到器件40上，则即使当器件40后来被键合到引线框60上时，烧结晶片贴附层30仍具有高的熔点，从而不会发生再熔。
所以，能够防止在烧结晶片贴附层30中形成空洞(void)，从而能够解决由于空洞造成的可靠性下降或芯片倾斜的问题。
在形成根据本发明的烧结晶片贴附层30的金属膏中，微米尺寸的金属粉末和纳米尺寸的金属粉末等以预定比率进行混合。
金属膏是除了由微米尺寸的金属粉末和纳米尺寸的金属粉末外还由溶剂、分散剂、稀释剂、粘合剂等混合成的合成物。
在这种情况下，微米尺寸的金属粉末和纳米尺寸的金属粉末可以是相同类型或不同类型的金属粉末。
作为示例，金(Au)、银(Ag)、锡(Sn)、铟(In)、铜(Cu)等可以被用作金属粉末。
当微米尺寸的金属粉末和纳米尺寸的金属粉末以预定比率混合成的金属膏被用作本发明中的烧结晶片贴附层30时，和只使用相同尺寸的金属粉末的情况相比，进一步改善了烧结特性。
更具体地，和使用仅由微米尺寸的金属粉末制成的金属膏的现有情况相比，由微米尺寸的金属粉末和纳米尺寸的金属粉末混合成的金属膏制成的烧结晶片贴附层30具有更大的表面积，从而，和使用金属膏的情况相比，增加了由此产生的烧结驱动力，进而能够降低烧结温度。
另一方面，和使用仅由纳米尺寸的金属粉末制成的金属膏的情况相比，根据本发明的烧结晶片贴附层30具有相对于金属粉末而言相对低含量的溶剂，包括分散剂、稀释剂、粘合剂等。
所以，在烧结时，所述溶剂可以很容易地被挥发从而被完全燃烧，进而能够防止在烧结晶片贴附层30内部或在器件40的下部中形成空洞。
在这种情况下，在根据本发明的烧结晶片贴附层30中使用的金属膏中，微米尺寸的金属粉末的尺寸可以为大约3.5μm到7.5μm，以及优选地，为大约5μm或更少。另外，纳米尺寸的金属粉末的尺寸可以为10nm到50nm，以及优选地，为大约30nm或更少。
同时，微米尺寸的金属粉末和纳米尺寸的金属粉末的比率可以优选为7∶3或8∶2。
特别地，当微米尺寸的金属粉末包括锡(Sn)和铟(In)时，锡(Sn)的含量比率优选为2.5或更少。
借助于外部压力的情况下，使用具有上述的金属粉末尺寸和合成物配给量的金属膏的烧结晶片贴附层30的烧结温度为大约250℃到300℃。
在这种情况下，可以使用有机材料来作为金属膏中的溶剂，该有机材料具有在大约250℃的温度下被完全挥发的特性。
这防止在达到烧结温度(大约250℃到300℃)之前用于形成烧结晶片贴附层30的金属膏引起金属粉末之间的键合，从而防止相互扩散的产生，并在真正的烧结温度下将器件40键合到布线图案21上。
焊料键合层50是用于焊接器件40和引线框60的一端以将它们彼此键合、并用于焊接电极图案23和引线框60的另一端以将它们彼此键合的键合层。
引线框60的两端每一端被键合到器件40和电极图案23上以电连接器件40。
在普通的模块中，布线键合通常被用于对器件40进行电布线；然而，在本发明中使用引线框60，从而实现了更加牢固和可靠的功率模块100。
图2-图8是用于解释根据本发明优选实施方式的使用烧结晶片贴附的功率模块的制造方法的图示。
首先，如图2所示，准备金属板11。
然后，如图3所示，在金属板11的表面上形成绝缘层13。
在这种情况下，绝缘层13可以通过使用阳极氧化方法氧化金属板11的整个表面来形成诸如氧化铝(Al2O3)之类的氧化膜。
通过氧化金属板11的表面并在金属板11上形成绝缘层13而形成的基板被称为阳极氧化金属基板(AMS)10。
另外，还可以通过将陶瓷层或环氧层键合到金属板11的表面来形成绝缘层13。
然后，如图4所示，包括布线图案21和电极图案23的电路层20以预定厚度形成在AMS 10上。
在这种情况下，电路层20以大约1μm的厚度，通过对诸如钛(Ti)、铜(Cu)、镍(Ni)、金(Au)等金属进行镀覆、溅射、淀积而形成在AMS 10上。
然后，如图5所示，金属膏被应用到布线图案21上，以便将器件40安装在布线图案21上。
当金属膏被应用到布线图案21上时，可以使用丝网印制法、金属丝印法、冲压法和点胶法等。
然后，以大约250℃到大约300℃之间的温度将器件40安装并烧结在金属膏上，从而被键合。
如果金属膏如上所述被烧结，则将布线图案21键合到器件40上的烧结晶片贴附层30形成在布线图案21与器件40之间。
在该构造中，晶圆预处理器件可以用作器件40。
晶圆预处理器件意指在锯其上安装有多个器件的晶圆基板之前，经历将以预定比率混合的金属膏以大约5到15(优选为10或更少)的厚度稀薄地应用并干燥到晶圆基板的下部、并然后将所述多个器件中的每个器件锯成单独的器件的器件。
换句话说，根据本发明的以预定比率混合的金属膏被稀薄地应用到晶圆预处理器件的下部上。
被稀薄地应用到器件40的下部上的金属膏允许器件40被快速地安装在以大约40μm到60μm(优选为大约50μm)的厚度应用到布线图案21上的金属膏上，从而更加便于它们的键合并增强了烧结时它们的粘附力。
在器件40被安装在AMS 10的布线图案21上时，执行用于将器件40电连接到电极图案23上的焊接工艺。
如图7所示，焊料键合层50形成在器件40和电极图案23上，以便键合将器件40连接到电极图案23上的引线框60。
然后，如图8所示，施加预定压力，从而通过焊料键合层50将引线框60的一端键合到器件40上并将引线框60的另一端键合到电极图案23上。
最后，应用合成树脂80等以进行密封，从而保护器件40和电路层20，以及提供键合到电极图案23上以将电极图案23连接到外面的总线70，从而完成了图1所示的功率模块100。
根据本发明的使用烧结晶片贴附的功率模块100及该功率模块的制造方法，可以使用烧结方法来键合薄的芯片，从而能够增加电效率并改善辐射特性。
另外，根据本发明，使用烧结方法从而不必必须施加高压，进而能够简化和促成键合工艺，并防止基板或薄的芯片的损坏。
另外，使用引线框60代替普通导线来作为与器件40电连接的布线，从而能够实现更加牢固和可靠的功率模块100。
利用根据本发明的使用烧结晶片贴附的功率模块及该功率模块的制造方法，在金属膏被应用到基板上和薄的器件被安装在金属膏上之后，金属膏被烧结以将它们键合，从而能够简化和便于键合工艺，并防止由于在现有的通过焊接进行键合时产生的压力而造成的损坏。
另外，根据本发明，器件的下部被金属膏键合到基板上，以容易地通过器件的下部来释放在操作功率模块时产生的热，从而能够改善辐射特性并相应地增加电效率。
虽然为了示出的目的已公开了本发明的优选实施方式，但是本领域的技术人员应该理解，在不脱离所附权利要求公开的本发明的范围和精神的情况下，可以做出各种修改、添加和替换。因此，这种修改、添加和替换也应该被理解为落入本发明的范围内。

Claims (16)

1.一种使用烧结晶片贴附的功率模块，该功率模块包括：
基板，该基板具有形成在金属板的表面上的绝缘层；
电路层，该电路层形成在所述基板上，并包括布线图案和电极图案；
安装在所述布线图案上的器件；
烧结晶片贴附层，该烧结晶片贴附层在所述布线图案和所述器件之间应用金属膏，并将该金属膏烧结以将所述布线图案键合到所述器件上；以及
引线框，该引线框将所述器件电连接到所述电极图案上。
2.根据权利要求1所述的使用烧结晶片贴附的功率模块，其中所述基板为阳极氧化金属基板。
3.根据权利要求1所述的使用烧结晶片贴附的功率模块，其中所述金属板是铝、铝合金和铜中的任一者。
4.根据权利要求1所述的使用烧结晶片贴附的功率模块，其中所述绝缘层为氧化铝。
5.根据权利要求1所述的使用烧结晶片贴附的功率模块，其中所述器件为晶圆预处理器件。
6.根据权利要求1所述的使用烧结晶片贴附的功率模块，其中所述金属膏具有7∶3的微米尺寸的金属粉末和纳米尺寸的金属粉末的比率。
7.根据权利要求6所述的使用烧结晶片贴附的功率模块，其中所述金属粉末为钛、铜、镍和金中的至少一者。
8.根据权利要求1所述的使用烧结晶片贴附的功率模块，该功率模块还包括焊料键合层，该焊料键合层将所述器件键合到所述引线框的一端并将所述电极图案键合到所述引线框的另一端。
9.根据权利要求1所述的使用烧结晶片贴附的功率模块，其中所述器件经过晶圆预处理，以使所述金属膏以5μm到15μm的厚度应用到所述器件的下部。
10.一种使用烧结晶片贴附的功率模块的制造方法，该制造方法包括：
(A)准备基板，该基板通过氧化金属板的表面并使绝缘层形成在所述金属板的整个表面上而形成；
(B)在所述基板上形成包括布线图案和电极图案的电路层；
(C)在将器件安装在所述布线图案上之后，将金属膏应用到所述布线图案上，从而将所述布线图案键合到所述器件上，并然后烧结所述金属膏；以及
(D)将所述器件焊接到所述引线框的一端，和将所述电极图案焊接到所述引线框的另一端，从而使所述器件与所述电极图案电连接。
11.根据权利要求10所述的使用烧结晶片贴附的功率模块的制造方法，该制造方法还包括：
(E)在安装所述器件之前，对所述器件执行晶圆预处理。
12.根据权利要求11所述的使用烧结晶片贴附的功率模块的制造方法，其中在步骤(E)，所述执行晶圆预处理包括：
准备其上安装有多个器件的晶圆基板；
将金属膏以5μm到15μm的厚度应用到所述晶圆基板的下部，并将该金属膏干燥；以及
将安装在所述晶圆基板上的所述多个器件锯成单独的器件。
13.根据权利要求10所述的使用烧结晶片贴附的功率模块的制造方法，其中步骤(A)包括：
(A-1)准备金属板；以及
(A-2)使所述金属板的表面氧化，并在所述金属板的整个表面上形成绝缘层。
14.根据权利要求10所述的使用烧结晶片贴附的功率模块的制造方法，其中在步骤(B)，通过镀覆法、溅射法和淀积法中的任一种方法来形成所述布线图案和所述电极图案。
15.根据权利要求10所述的使用烧结晶片贴附的功率模块的制造方法，其中在步骤(C)，当所述金属膏被应用到所述布线图案上时，使用丝网印制法、金属丝印法、冲压法和点胶法中的任一种方法。
16.根据权利要求10所述的使用烧结晶片贴附的功率模块的制造方法，其中在步骤(C)，所述金属膏的烧结温度在大约250℃到大约300℃之间。
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