CN102437269B - 光电子半导体器件及其制造方法 - Google Patents

光电子半导体器件及其制造方法 Download PDF

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Publication number
CN102437269B
CN102437269B CN201110400131.5A CN201110400131A CN102437269B CN 102437269 B CN102437269 B CN 102437269B CN 201110400131 A CN201110400131 A CN 201110400131A CN 102437269 B CN102437269 B CN 102437269B
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China
Prior art keywords
cover plate
semiconductor module
chip
light
frame part
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Expired - Fee Related
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CN201110400131.5A
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English (en)
Chinese (zh)
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CN102437269A (zh
Inventor
斯特芬·科勒
莫里茨·恩格尔
弗兰克·辛格
斯特凡·格勒奇
托马斯·蔡勒
马蒂亚斯·魏斯
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of CN102437269A publication Critical patent/CN102437269A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841Reflective coatings, e.g. dielectric Bragg reflectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means

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  • Led Device Packages (AREA)
CN201110400131.5A 2007-08-20 2008-08-11 光电子半导体器件及其制造方法 Expired - Fee Related CN102437269B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007039291.7 2007-08-20
DE102007039291A DE102007039291A1 (de) 2007-08-20 2007-08-20 Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
CN2008801038032A CN101785119B (zh) 2007-08-20 2008-08-11 光电子半导体器件及其制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2008801038032A Division CN101785119B (zh) 2007-08-20 2008-08-11 光电子半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN102437269A CN102437269A (zh) 2012-05-02
CN102437269B true CN102437269B (zh) 2015-11-18

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Family Applications (2)

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CN201110400131.5A Expired - Fee Related CN102437269B (zh) 2007-08-20 2008-08-11 光电子半导体器件及其制造方法
CN2008801038032A Expired - Fee Related CN101785119B (zh) 2007-08-20 2008-08-11 光电子半导体器件及其制造方法

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Country Link
US (1) US9564555B2 (enExample)
EP (1) EP2188852B1 (enExample)
JP (1) JP5466641B2 (enExample)
KR (1) KR101501795B1 (enExample)
CN (2) CN102437269B (enExample)
DE (1) DE102007039291A1 (enExample)
TW (1) TWI513029B (enExample)
WO (1) WO2009024125A1 (enExample)

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Also Published As

Publication number Publication date
KR20100063072A (ko) 2010-06-10
US9564555B2 (en) 2017-02-07
JP2010537411A (ja) 2010-12-02
CN102437269A (zh) 2012-05-02
KR101501795B1 (ko) 2015-03-11
DE102007039291A1 (de) 2009-02-26
US20100230697A1 (en) 2010-09-16
TW200917532A (en) 2009-04-16
JP5466641B2 (ja) 2014-04-09
CN101785119B (zh) 2012-02-01
EP2188852B1 (de) 2017-04-26
EP2188852A1 (de) 2010-05-26
TWI513029B (zh) 2015-12-11
CN101785119A (zh) 2010-07-21
WO2009024125A1 (de) 2009-02-26

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