CN102437130A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN102437130A
CN102437130A CN201110375028XA CN201110375028A CN102437130A CN 102437130 A CN102437130 A CN 102437130A CN 201110375028X A CN201110375028X A CN 201110375028XA CN 201110375028 A CN201110375028 A CN 201110375028A CN 102437130 A CN102437130 A CN 102437130A
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layer
semiconductor device
parts
alloy
manufacturing approach
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CN102437130B (zh
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池田靖
冈本正英
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Hitachi Ltd
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Hitachi Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
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    • B23K20/04—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a rolling mill
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Abstract

本发明提供一种半导体装置及其制造方法，该半导体装置具有第一部件、第二部件以及将所述第一部件和所述第二部件接合的连接材料。所述连接材料具有：Al系层、在所述Al系层和所述第一部件之间设置的第一Zn-Al系层以及在所述Al系层和所述第二部件之间设置的第二Zn-Al系层。通过使用该连接材料，在连接时能够抑制连接材料的表面的Al氧化膜的形成，能够得到用Zn-Al合金不能得到的良好的浸润性。另外，在接合后存留有Al系合金层的场合，由于柔软的Al作为应力缓冲材料发挥功能，所以能够得到很高的接合可靠性。

Description

半导体装置及其制造方法
本申请为申请号为200710188775.6、申请日为2007年11月20日、名称为《接合材料、接合材料的制造方法及半导体装置》的申请的分案申请。
技术领域
本发明涉及接合材料的技术，特别是涉及在该接合材料的构造及制造方法以及在使用了该接合材料的半导体装置、高功率半导体装置、高功率模块等上使用有效的技术。
背景技术
作为本发明者研究的技术，用图1及图2对使用了接合材料的半导体装置进行说明，图1是显示现有半导体装置的构造的图。图2是说明再熔融的焊料形成的溢出(flush)的图。
如图1所示，半导体装置7是如下制造的：将半导体元件1通过焊料3接合在框架2上，通过金属线4将引线5的内引线与半导体元件1的电极进行引线接合后，由封装用树脂6或惰性气体进行封装。
该半导体装置7是通过Sn-Ag-Cu系的中温的无铅焊料由回流焊焊接在印制基板上。Sn-Ag-Cu系无铅焊料的熔点约220℃，较高，在进行回流接合时要设想接合部能加热到最高260℃。因此，为了构成温度梯度，在进行半导体装置内部的半导体元件的管芯焊接时，需要使用有290℃以上的熔点的高铅焊料。高铅焊料作为构成成分含有85wt.％以上的铅，与2006年7月开始施行的RoHS指令中禁止的Sn-Pb共晶焊料相比，对环境造成的负担大。因此，急切期待着取代高铅焊料的替代接合材料的开发。
现在，由于已经开发出的Sn-Ag-Cu系等的焊料的熔点为260℃以下，所以，使用在半导体元件的管芯焊接上时，在二次实装时(最高温度260℃)，焊料会熔融。当使用树脂将接合部周围铸型时，如果内部的焊料熔融，如图2所示，由于熔融时的体积膨胀，焊料3会从封装用树脂6与框架2的界面漏出，称为“溢出(flush)”。或者既便还没有漏出也是要漏出状动作，其结果，凝固后，成为在焊料中形成大的空隙8的不良品。作为替代材料的候补，在熔点方面报导了Au-Sn、Au-Si、Au-Ge等的Au系焊料和Zn、Zn-Al系焊料及Bi、Bi-Cu、Bi-Ag等的焊料，正在全球推进着研究。
但是，Au系的焊料作为构成成分含有80wt.％以上的Au，因成本方面问题而在通用性上有困难。Bi系焊料的热传导率约为9W/mK，比现行的高铅焊料低，能够推定难以在要求高散热性的高功率半导体装置及高功率模块等上使用。另外，Zn及Zn-Al系焊料具有约100W/mK高的热传导率，但难以浸润(特别是Zn-Al系焊料)，焊料硬，有在接合后的冷却时半导体元件因热应力而易损坏的问题。
在专利文献1(特开2002-358539号公报)和专利文献2(特开2004-358540号公报)中，是通过做成：1～7wt.％Al、0.5～6wt.％Mg、0.1～20wt.％Ga、0.001～0.5wt.％P、余量为Zn，2～9wt.％Ge、2～9wt.％Al、0.001～0.5wt.％P、余量为Zn，或2～9wt.％Ge、2～9wt.％Al、0.01～0.5wt.％Mg、0.001～0.5wt.％P、余量为Zn，使Zn系焊料合金相对于Cu和Ni的浸润性提高且熔点降低。但是，由于成分是Al和Mg，所以通过接合时的加热，Al氧化物及Mg氧化物会在熔融部表面生成膜。由于这些膜会阻碍浸润，所以如果不通过擦刷等机械性弄破膜，就有可能得不到充分的浸润。另外，关于焊料的硬度，由于还没有得到改善，所以不能期待能够改善接合后的冷却时或温度循环时的热应力对半导体元件的破坏。
在专利文献3(特开2002-26110号公报)中，是通过在Zn-Al系合金的最表面设置In、Ag、Au层，抑制Zn-Al系合金表面的氧化，实现浸润性的提高。但是，为了设置In、Ag及Au层，需要在Zn-Al表面实施镀层及蒸镀等的处理，涉及到材料制造的工序增加。另外，与上述同样，在添加了In的场合有可能使硬度降低，不能期待抑制接合后的冷却时的热应力造成的半导体元件的破坏的效果。
发明内容
本发明者考虑了是否能由Zn-Al系合金实现高铅焊料的替代。在上述的现有技术中，没有考虑到以下问题：由于在Zn-Al系合金中含有Al，所以不能确保充分的浸润性。由于要在Zn-Al系合金上进行表面处理，会增加材料制造时的工序。不能抑制接合后的冷却时或温度循环时的热应力造成的半导体元件的破坏。
本发明考虑到了这些问题，提供的接合材料能够适用于接合具有260℃以上熔点的Zn-Al系合金，改善接合时的浸润性，减少材料制造时的工序，提高对热应力的接合可靠性。
从本说明书的记载以及附图中可以明确本发明的新颖性特征。
如下简单地说明本申请中公开的发明中的代表性的内容的概要。
本发明提供一种在Al系合金层的最表面设置了Zn系合金层的接合材料。特别提供一种上述Al系合金层的Al含有率为99～100wt.％的接合材料或上述Zn系合金层的Zn含有率为90～100wt.％的接合材料。
另外，本发明提供一种接合材料的制造方法，是将由在Zu系合金层上的Al系合金层以及在其上的Zn系合金层构成的接合材料，通过包层压延或加压成形来制造。
另外，本发明还提供使用上述接合材料将半导体元件接合在框架上的半导体装置(管芯焊接构造)、将金属罩接合在基板上的半导体装置(气封构造)、通过凸起接合的半导体装置(翻装晶片构造)。
附图说明
图1是显示现有的半导体装置的构造的图。
图2是说明在图1的半导体装置上再熔融了的焊料而形成的溢出的图。
图3是说明本发明的实施方式的包层压延的图。
图4是说明本发明的实施方式的加压成形的图。
图5是显示本发明的实施方式中的接合材料的截面的图。
图6是显示在本发明的实施方式中使用了表1的接合材料(实施例1～12)的半导体装置的截面的图。
图7是显示在图6的半导体装置中接合材料形成的接合部的截面照片的图。
图8是显示本发明的实施方式中使用了表1的接合材料(实施例13～24)的另外的半导体装置的截面的图。
图9是显示图6的半导体装置中的接合材料一体型的金属罩的图。
图10是显示本发明的实施方式中的使用了表1的接合材料的另一个半导体装置的截面及安装构造的图。
具体实施方式
以下基于附图详细说明奔放的实施方式。另外，在用于说明实施方式的全图中，作为原则对同一的部件付与同一符号，并省略重复说明。
本发明的实施方式的概要
第1发明提供一种在Al系合金层的最表面设置了Zn系合金层的接合材料。由于Zn-Al系合金有Al成分，所以在熔融的瞬间，在表面形成Al氧化物膜，因此如果不机械性破坏氧化物膜就不能得到充分的浸润性。由于本发明的接合材料的表面是仅作为杂物含有Al的Zn系合金，所以在接合时，能够在Zn系合金与Al系合金反应形成Al氧化物膜之前确保充分的浸润性。另外，由于在接合时熔融部为Zn-Al系合金，所以，熔点降至380℃左右。由此，由于比Zn的熔点420℃低，所以与纯Zn相比，能够减少接合后的冷却时发生的热应力，能够抑制半导体元件的破坏。通过在接合时使Al合金层留存，较软的Al可作为应力缓冲材料发挥功能，因此能够提高接合可靠性。既便在接合时温度不上升到Zn的熔点的420℃，只要是380℃以上的温度，在相接触的Zn层与Al层之间产生扩散，形成熔点380℃的Zn-Al共晶，由此能够接合。
第2发明是提供一种上述Al系合金层的Al含有率为99～100wt.％的接合材料。Al的纯度越接近100％越变得柔软，很容易得到应力缓冲功能。而在Al的纯度不到99wt.％的场合，由于0.2％屈服强度及硬度变硬，所以难以得到应力缓冲功能。0.2％屈服强度优选为30N/mm2以下。Al层的厚度优选做成30～200μm。在厚度为30μm以下的场合，由于不能充分缓冲热应力，所以有时会发生芯片开裂。厚度为200μm以上的场合，由于Al、Mg、Ag、Zn的热膨胀率比Cu框架大，所以，热膨胀率的效果变大，有时会造成芯片开裂发生等可靠性的降低。
第3发明提供一种上述Zn系合金层的Zn含有率为90～100wt.％(从主要成分以外看，Al含有率不到0.01wt.％)的接合材料。如果Zn系合金含有的Al为0.01wt.％以上，则接合时由于在接合材料的表面Al氧化物膜的量增加，有可能不能得到良好的浸润性。Zn系合金层的厚度优选做成5～100μm。在不到5μm的场合，难以确保接合部全区域的浸润性。
第4发明提供一种制造方法，在Zn系合金层上的Al系合金层之上再施加一层Zn系合金层，通过将这样构成的接合材料通过包层压延来制造。如图3所示，使用轧辊103进行包层压延后，Zn系合金层101a与Al系合金层102a在接触的同时因压力而发生很大的变形，由此，在Zn系合金层101a及Al系合金层102a的表面形成的氧化物膜破坏，通过新生面而金属接合。在包层压延中，在到Zn和Al的扩散变得显著的温度之前，不施加热负荷。因此，Al不会在表面的Zn层上扩散到达最表层，在接合时能够得到良好的浸润性。
第5发明提供一种制造方法，在在Zn系合金层上的Al系合金层上再施加一层Zn系合金层，通过将这样构成的接合材料进行加压成形来制造。如图4所示，使用加压成形机104进行加压成形后，Zn系合金层101b与Al系合金层102b在接触的同时因压力而发生很大的变形，由此，在Zn系合金层101b及Al系合金层102b的表面形成的氧化物膜破坏，通过新生面而金属接合。在加压成形中，只要到Zn和Al的扩散变得显著的温度之前不施加热负荷，Al就不会在表面的Zn层上扩散到达最表层，在接合时能够得到良好的浸润性。
以下具体说明基于上述的第1～第5发明的实施方式及实施例。在此，主要是以通过半导体装置、高功率半导体装置、高功率模块等的管芯焊接上使用的包层压延制造的接合材料为例进行说明。
实施方式
图5显示本发明的实施方式中的接合材料的截面。本实施方式中的接合材料下面是Zn系合金层(也仅记载为Zn层或Zn)101、中间是Al系合金层(也仅记载为Al层、Al)102、最上面上是Zn系合金层(也仅记载为Zn层或Zn)101。该接合材料如上述的图3所示，是通过将Zn系合金层101a、Al系合金层102a、Zn系合金层101a重叠压延加工，即通过进行包层压延来制造的。
表1中显示这样制造的所有的接合材料(在此称为包层材料)。包层材料1分别是10μm厚度Zn层、50μm厚度Al层、10μm厚度Zn层。包层材料2是20μm厚度Zn层、50μm厚度Al层、20μm厚度Zn层，包层材料3是20μm厚度Zn层、100μm厚度Al层、20μm厚度Zn层。
表1
Figure BSA00000618828000061
实施例1～12
实施例1～12如图6所示，在半导体装置11的管芯焊接上使用了接合材料10。该半导体装置11具备：半导体元件1；连接该半导体元件1的框架2；一端为外部端子的引线5；将该引线5的另一端与半导体元件1的电极接合的金属线4；以及树脂封装半导体元件1及金属线4的封装用树脂6；半导体元件1和框架2是由接合材料10接合的构成。
在该半导体装置11的制造中，在施加了纯Cu或施加了Ni、Ni/Ag、Ni/Au镀层的框架2上供给接合材料10，在叠层半导体元件1后，一面加压一面在N2氛围气中按400℃、1min.加热，进行管芯焊接，届时的接合部的截面如图7所示。框架2与接合材料10的Al层之间成为在接合时通过Zn与Al反应形成的Zn-Al合金层。半导体元件1与接合材料10的Al层之间也同样。其后，用金属线4将半导体元件1与引线5之间进行引线接合，在180℃下用封装树脂6进行封装。
关于实施例1～12(使用表1的包层材料1、2、3)，对在管芯焊接时的浸润性及将半导体装置在最高温度260℃以上进行了3次回流试验后的接合维持性进行了评价，将其结果显示在表2中。关于浸润性，将相对于半导体元件的面积得到了90％以上的浸润性的场合作为○，将不到90％、75％以上的场合作为△，将不到75％的场合作为×。关于260℃(最高温度)的回流试验，将回流试验后的接合面积相对于回流试验前的接合面积减少了5％以上的作为×，不到5％的场合作为○。
表2
  实施例   接合材料   框架   接合温度   浸润性  260℃回流
  1   包层材料1   纯Cu   400℃   △  ○
  2   包层材料1   Ni   400℃   ○  ○
  3   包层材料1   Ni/Ag   400℃   ○  ○
  4   包层材料1   Ni/Au   400℃   ○  ○
  5   包层材料2   纯Cu   400℃   △  ○
  6   包层材料2   Ni   400℃   ○  ○
  7   包层材料2   Ni/Ag   400℃   ○  ○
  8   包层材料2   Ni/Au   400℃   ○  ○
  9   包层材料3   纯Cu   400℃   △  ○
  10   包层材料3   Ni   400℃   ○  ○
  11   包层材料3   Ni/Ag   400℃   ○  ○
  12   包层材料3   Ni/Au   400℃   ○  ○
  比较例   接合材料   框架   接合温度   浸润性  260℃回流
  1   Zn-6Al(wt.％)   纯Cu   400℃   ×  -
  2   Zn-6Al(wt.％)   Ni   400℃   ×  -
  3   Zn-6Al(wt.％)   Ni/Ag   400℃   ×  -
  4   Zn-6Al(wt.％)   Ni/Au   400℃   ×  -
  5   Zn   纯Cu   450℃   △  ×
  6   Zn   Ni   450℃   ○  ×
  7   Zn   Ni/Ag   450℃   ○  ×
  8   Zn   Ni/Au   450℃   ○  ×
该评价的结果是在使用包层材料1、2、3(Zn/Al/Zn)的接合材料接合的场合，相对于Ni、Ni/Ag、Ni/Au镀层的框架得到了90％以上的浸润性。但是，相对于纯Cu的框架，浸润性约为80％，为△。关于260℃的回流试验，实施例1～12中的任一个在实验前后接合面积都没有变化。
另一方面，在使用了现有的接合材料(Zn-6Al(wt.％)、Zn)的比较例1～4的场合，由于在熔融了的Zn-Al合金的表面形成了牢固的Al氧化物膜，所以相对于框架都为不到75％的浸润性。特别是在纯Cu、Ni镀层的框架上，几乎没能浸润。比较例5～8的场合是通过在Zn的熔点420℃以上的温度下进行接合，得到了90％以上的浸润性。但是，不能缓和在接合后的冷却时由于半导体元件与Cu制框架的热膨胀率差所产生的热应力，发生了半导体元件的损坏。关于幸免于损坏的，在制造半导体装置进行回流试验时，发生了半导体元件的损坏。
如上，根据实施例1～12，通过将本实施方式的接合材料10使用在半导体装置11的管芯焊接上，由于在Al系合金层的最表面设置不含有0.01wt.％以上的Al的Zn系合金层，在接合时能够抑制接合材料的表面的Al氧化膜的形成，能够得到在Zn-Al合金上得不到的良好的浸润性。另外，在接合后存留有Al系合金层的场合，由于很软的Al作为应力缓冲材料发挥功能，所以能够得到很高的接合可靠性。
实施例13～24
实施例13～24如图8所示，作为需要气封的半导体装置21的封装材料使用了本接合材料10a。该半导体装置21包括：半导体元件1；连接该半导体元件1的模块基板23；一端为外部端子的引线5；将该引线5的另一端与半导体元件1的电极接合的金属线4；以及将半导体元件1及金属线4气封，并接合在模块基板23上的金属罩22；模块基板23和金属罩22是由接合材料10a接合构成。另外，在该半导体装置21的模块基板23上还接合有芯片零件等。
在制造该半导体装置21时，是通过Sn系无铅焊料3或导电性粘结剂、Cu粉/Sn粉复合材料等将半导体元件1及芯片零件等接合在模块基板23上，之后，在模块基板23与金属罩22之间放置接合材料10a，一面在400℃下加压一面进行接合。
另外，关于金属罩，为了进行气封，也可以如图9所示，将科瓦铁镍钴合金(kovar)、因瓦合金(invar)等的金属合金24和Al系合金层102以及Zn系合金层101一起进行包层压延加工，做成接合材料一体型的金属罩22a。
关于实施例13～24(使用表1的包层材料1、2、3)，表3显示对管芯焊接时的浸润性进行了评价的结果。关于浸润性，将相对于封装面积得到了可维持气密的浸润性的场合作为○，将因空隙、裂缝等而不能维持气密的场合作为×。
表3
  实施例   接合材料   框架   接合温度   浸润性
  13   包层材料1   纯Cu   400℃   △
  14   包层材料1   Ni   400℃   ○
  15   包层材料1   Ni/Ag   400℃   ○
  16   包层材料1   Ni/Au   400℃   ○
  17   包层材料2   纯Cu   400℃   △
  18   包层材料2   Ni   400℃   ○
  19   包层材料2   Ni/Ag   400℃   ○
  20   包层材料2   Ni/Au   400℃   ○
  21   包层材料3   纯Cu   400℃   △
  22   包层材料3   Ni   400℃   ○
  23   包层材料3   Ni/Ag   400℃   ○
  24   包层材料3   Ni/Au   400℃   ○
  比较例   接合材料   框架   接合温度   浸润性
  9   Zn-6Al(wt.％)   纯Cu   400℃   ×
  10   Zn-6Al(wt.％)   Ni   400℃   ×
  11   Zn-6Al(wt.％)   Ni/Ag   400℃   ×
  12   Zn-6Al(wt.％)   Ni/Au   400℃   ×
该评价的结果是在用包层材料1、2、3(Zn/Al/Zn)的接合材料接合的场合，在Ni、Ni/Ag、Ni/Au镀层的框架上得到了能够充分维持气密的浸润性。但是，在纯Cu的框架上由于未浸润及空隙而成为×。
另一方面，使用了现有的接合材料(Zn-6Al(wt.％))的比较例9～12的场合，由于在熔融了的Zn-Al合金的表面形成牢固的Al氧化物膜，所以未浸润，并由于空隙而没能气封。
如上，根据实施例13～24，通过使用本实施方式中的接合材料10a作为半导体装置21的封装材料，在接合时能够抑制接合材料的表面的Al氧化膜的形成，能够得到可充分维持气密的浸润性。
在图8所示的半导体装置21上，也可以使用本接合材料10来取代无铅焊料3对半导体元件1和模块基板23进行接合，这种情况下，能够得到与上述实施例1～12同样的效果。
其他的实施例
其他的实施例如图10所示，作为需要实装翻装晶片的半导体装置31的凸起(bump)使用了本接合材料10b。该半导体装置31具备半导体元件1，是由接合材料10b将该半导体元件1和实装其的基板34接合而构成。
在该半导体装置31的制造时，将接合材料10b放置在将基板34的Cu配线35上施加了Ni或Ni/Au的镀层36的凸起与在半导体元件1的Al配线32上施加了Zn镀层33的电极之间，在380℃下一面加压一面进行了接合。
在另外的实施例中也是通过使用本实施方式中的接合材料10b作为半导体装置31的凸起，能够在接合时能够抑制接合材料的表面的Al氧化膜的形成，得到良好的浸润性。
以上，基于实施方式具体说明了本发明者进行的发明，但本发明并不限于上述实施方式，当然也可以在不脱离其宗旨的范围内进行各种变更。
即：在上述说明中，关于本发明的适用，以半导体装置的管芯焊接为例进行了说明，但还能够适用于各种要进行管芯焊接的半导体装置。可例举如交流发电机用二极管、IGBT模块、RF模块等的前端模块、汽车用高功率模块等。
另外，在上述说明中，是以将半导体装置回流焊实装在模块基板上的情况为例进行了说明，但当然也能够适用于例如MCM(Multi Chip Module)构成上使用的场合。
如上，本发明的接合材料能够在半导体装置、高功率半导体装置、高功率模块等的半导体装置的管芯焊接或气封的封装材料、翻装晶片接合等上有效地使用。
简单地如下说明本申请中公开的发明中的代表性的发明取得的效果。
根据本发明，由于使用在Al系合金层的最表面设置了Zn系合金层的接合材料，所以在接合时能够抑制接合材料的表面的Al氧化膜的形成，能够得到良好的浸润性。另外，由于在接合后Al系合金层作为应力缓冲材料发挥功能，所以能够得到很高的接合可靠性。其结果是能够在接合中使用具有260℃以上熔点的Zn-Al系合金，能够改善接合时的浸润性，能够减少材料制造时的工序，能够提高相对热应力的接合可靠性。

Claims (18)

1.一种半导体装置，具有：第一部件、第二部件以及将所述第一部件和所述第二部件接合的连接材料，其特征在于，
所述连接材料具有：
Al系层，
在所述Al系层和所述第一部件之间设置的第一Zn-Al系层，
在所述Al系层和所述第二部件之间设置的第二Zn-Al系层。
2.根据权利要求1所述的半导体装置，其特征在于：所述Al系层的Al含有率为99～100wt.％。
3.根据权利要求2所述的半导体装置，其特征在于：所述Al系层的0.2％屈服强度为30N/mm2以下。
4.根据权利要求1所述的半导体装置，其特征在于：所述Zn系合金层的Al含有率为不到0.01wt.％。
5.根据权利要求1所述的半导体装置，其特征在于：
所述连接材料具有第一面和相反的第二面，
所述连接材料的第一面的第一Zn-Al系层与所述第一部件连接，同时，与所述第一部件连接的区域的相反的区域的所述第二Zn-Al系层与所述第二部件连接。
6.根据权利要求1所述的半导体装置，其特征在于：所述第一部件为半导体元件。
7.根据权利要求6所述的半导体装置，其特征在于：所述第二部件为基板、框架、金属罩、引线中的任一种。
8.一种半导体装置的制造方法，所述半导体装置通过连接材料将第一部件和第二部件相接合，其特征在于：
具有
在所述第一部件和所述第二部件之间设置连接材料的设置工序，以及
在所述设置工序后通过加热处理将所述第一部件和所述第二部件相连接的连接工序；
在所述连接工序后，所述连接材料具有Al系层、在所述Al系层的两面上设置的第一和第二Zn-Al系层。
9.根据权利要求8所述的半导体装置的制造方法，其特征在于：在所述连接工序前，所述连接材料具有Al系层、在所述Al系层的两面上设置的第一和第二Zn系层。
10.根据权利要求8所述的半导体装置的制造方法，其特征在于：在所述连接工序中，Al系层与第一或者第二Zn系层熔融形成第一或者第二Zn-Al系层，同时，所述Al系层的一部分不进行所述熔融，而作为Al系层残留。
11.根据权利要求8所述的半导体装置的制造方法，其特征在于：所述Al系层的Al含有率为99～100wt.％。
12.根据权利要求11所述的半导体装置的制造方法，其特征在于：所述Al系层的0.2％屈服强度为30N/mm2以下。
13.根据权利要求9所述的半导体装置的制造方法，其特征在于：所述第一和第二Zn系层的Zn含有率为90～100wt.％。
14.根据权利要求13所述的半导体装置的制造方法，其特征在于：所述第一和第二Zn系合金层的Al含有率为不到0.01wt.％。
15.根据权利要求9所述的半导体装置的制造方法，其特征在于：所述连接材料是通过将所述第一或者第二Zn系层在所述Al系层的两面上进行包层压延或加压成形来形成的。
16.根据权利要求8所述的半导体装置的制造方法，其特征在于：
所述连接材料具有第一面和相反的第二面，
所述连接材料的第一面与所述第一部件连接，同时，与所述第一部件连接的区域的相反的面的区域与所述第二部件连接。
17.根据权利要求8所述的半导体装置的制造方法，其特征在于：所述第一部件为半导体元件。
18.根据权利要求17所述的半导体装置的制造方法，其特征在于：所述第二部件为基板、框架、金属罩、引线中的任一种。
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US8356742B2 (en) 2013-01-22
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CN101185991B (zh) 2012-01-11
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