CN102216986A - 低耦合氧化物介质(lcom) - Google Patents
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Abstract
本发明涉及低耦合垂直磁性记录介质,其包含磁性存储层和至少一个低饱和磁化层。所述磁性存储层的饱和磁化强度约为400-900emu/cm3。
Description
背景
带可磁化介质的磁盘用于多数计算机系统中的数据存储。根据域理论,磁性材料由许多称为亚显微区域的域构成。各域包含平行的原子力矩,并磁化到饱和,但是不同域的磁化方向并不一定平行。在未施加磁场时,相邻的域沿各方向(称为易磁化方向)随意取向,这取决于晶体的几何构形。所有这些不同磁化方向的最终效果是零,如同未磁化样本一样。当施加磁场时,多数基本平行于施加磁场的方向的域的尺寸以其他为代价生长。这称为域的边界置换或者域生长。进一步增大磁场会导致更多的域旋转,并沿施加的磁场平行排列。当所述材料达到磁化饱和点时,在磁场强度提高时不再发生域生长。
磁性材料的磁化或脱磁的难易取决于晶体结构、颗粒取向、应变状态和磁场方向和强度。沿易磁化轴多数容易进行磁化,而沿难磁化轴多数难以磁化。当存在易磁化轴和难磁化轴时就称磁性材料具有磁化各向异性。另一方面,当不存在易磁化轴和难磁化轴时就称磁性材料为各向同性。
许多现有技术中的磁性记录介质制成纵向构型。即,记录介质制成磁性层中具有平面内(in-plane)(纵向)各向异性。纵向各向异性导致沿平行于磁性层表面的平面中的方向形成磁性。
但对更高容量磁记录介质的需求使得人们对垂直记录介质很感兴趣;即磁性层中具有垂直各向异性的记录介质,在沿垂直于磁性层表面的平面中的方向形成磁性。通常,垂直记录介质用多晶CoCr合金或CoPt-氧化物合金薄膜制成。多晶薄膜中富Co区域是铁磁体,而薄膜中富Cr或氧化物的区域是非磁性的。相邻铁磁体域之间的磁性作用因其间的非磁性区域而减弱。
发明概述
本发明一个实施方式涉及低耦合垂直磁性记录介质,它包括磁性存储层和至少一个低饱和磁化层,其中,所述磁性存储层的饱和磁化强度约为400-900emu/cm3,且所述至少一个低饱和磁化层的饱和磁化强度低于磁性存储层的饱和磁化强度。
附图简要说明
结合附图并参考发明详述可以更好地理解本发明。
图1显示了本发明一个实施方式的磁性记录介质。
图2显示了本发明另一实施方式的磁性记录介质。
图3显示了本发明第三实施方式的磁性记录介质。
图4显示了本发明第四实施方式的磁性记录介质。
图5显示了Monte Carlo模拟,证实了本发明实施方式中改进的记录性质。
本发明优选实施方式详述
在说明书和权利要求书中,单数形式的冠词包括其复数形式,除非另有所述。
发明人发现垂直记录介质中磁颗粒之间弱的均匀直接交换耦合能改善性能。而且,发明人还发现磁颗粒之间弱的均匀直接交换耦合可以通过在垂直介质结构中加入低饱和磁化强度的磁性层来产生。此外,发明人发现通过磁性层的不同饱和磁化强度(Ms)可以控制直接交换耦合的强度。
本发明实施方式涉及低耦合垂直磁记录介质,它包括至少一个低饱和磁化层,其中,所述至少一个低饱和磁化层的饱和磁化强度低于600emu/cm3。
本发明另一实施方式涉及制造低耦合垂直磁记录介质的方法,所述方法包括将粘结层沉积到基材上,沉积软底层,沉积非磁性夹层,沉积存储层并沉积低饱和磁化强度的磁化层,其中,所述至少一个低饱和磁化层的饱和磁化强度低于600emu/cm3。
本发明另一实施方式涉及包括获得存储介质的方法,所述存储介质具有饱和磁化强度低于600emu/cm3的至少一层。
通过以下详细说明,本发明的其他优势对本领域技术人员来说将显而易见,其中,本发明仅显示和描述了一部分优选实施方式,用于说明实施本发明的最好的方式。本发明包括其他不同的实施方式,在各种不同方面可以进行修改,只要所有这些都不背离本发明。因此,所述附图和说明书其本身仅仅是示例性的,并非限制性的。
实施例
本文所述所有样品除了碳膜以外均用DC磁控管溅射制得。证实通过反应性溅射来降低交换耦合的实施例数据在下文解释。
图1说明了本发明第一个优选实施方式。这一实施方式中的低耦合垂直磁性记录介质10包括基材11、粘结层12、软底层13、无定形层14、非磁性夹层15、低耦合磁性层16、存储层17和碳保护层。任选地,软底层13、无定形层14、非磁性夹层15、低耦合磁性层16、存储层17和碳保护层18可以包括多层。
任选的粘结层12的优选材料是包含Cr、Ni、Ta和Ti中一种或多种的合金。其选择取决于基材11以及用于软底层13的材料,且在本领域普通技术人员的技能范围之内。优选地,粘结层的厚度约为1-400nm。更优选地,厚度约为2-20nm。
软底层13的优选材料包括Fe和Co中的至少一种和选自Ni、B、P、Si、C、Zr、Nb、Hf、Ta、Al、Si、Cu、Ag、Au中的一种或多种元素的合金。优选地,软底层13的厚度约为10-400nm。更优选地,厚度约为20-100nm。
无定形层14是任选的。无定形层14的优选材料包括包含Ta、Ti、Ni、Cr、Zr、Nb、和P的元素和合金,其组成是为了这些合金是无定形的。其他优选的材料包括无定形铁磁体材料,由铁和选自Co、B、P、Si、C、Zr、Nb、Hf、Ta、Al、Si、Cu、Ag和Au的一种或多种元素组成。其他优选的材料包括TixCr100-x和TaxCr100-x,其中(30<x<60)。优选地,所述无定形层14的厚度约为0-10nm。更优选地,厚度约为0.2-4nm。
所述非磁性夹层15的结晶结构取决于存储层17的结晶结构。例如,如果存储层17由六角形封闭封装(hcp)结构的富Co合金制成,非磁性夹层15可包括Cu、Ag、Au、Ir、Ni、Pt、Pd或其合金的面心立方体(fcc)层。优选地,这种非磁性夹层15的厚度约为0.2-40nm。更优选地,厚度约为1-20nm。或者,非磁性夹层15包括Ru、Re、Hf、Ti、Zr或它们合金的六角形封闭封装(hcp)层。其它可用的hcp层包括Co和CoCr合金。加入CoCr的任选添加剂包括Ta、B、Pt、Nb、Ru、Zr和氧化物材料。为了使用CoCr,选择Cr和其他合金元素的浓度,使合金是非磁性的,具有hcp结晶结构。为了使用含Co的合金,选择Cr和其他合金元素的浓度,使合金是非磁性的,具有hcp结晶结构。优选地,hcp层的厚度约为0.2-40nm。更优选地,厚度约为1-20nm。
存储层17可以包括一层或任意数量的磁性材料层。存储层17的优选材料包括具有选自Pt、Cr、Ta、B、Cu、W、Mo、Ru、Ni、Nb、Zr、Hf中的一种或多种元素的Co。任选地,在存储层17中也可以存在一种或多种元素的氧化物,所述元素例如Si、Ti、Zr、Al、Cr、Co、Nb、Mg、Ta、W或Zn。优选地,存储层17在受控的气氛中生长。优选地,所述受控的气氛包括Ar、Kr或Xe、或这些气体和活性气体组分如O2的组合。存储层17可以在低温(即低于400K)下生长。通常,低温是用于在受控气氛(包含Ar、Kr、Xe和O2的组合)中溅射磁性层的制造方法。或者。存储层17可以在高温(即400K以上)生长。优选地,高温是高于420K并低于600K。
在本实施方式中,低耦合磁性层16在非磁性夹层15和存储层17之间。在本实施方式中,低耦合磁性层16的结晶结构可以调节,以改进存储层17的结晶生长。例如,对于具有hcp结晶结构的存储层17,可以选择具有hcp或fcc结晶结构或无定形的低耦合磁性层16。低耦合磁性层16的优选材料包含Fe、Co、Ni中的至少一种和选自Cr、Pt、Ta、B、Ru、Cu、Ag、Au、W、Mo、Nb、Zr、Hf、Ti、Zn和Re中的一种或多种元素。优选地,低耦合磁性层16的Ms比存储层17的Ms低,以获得弱直接交换耦合。存储层17的Ms优选约400-900emu/cm3。低耦合磁性层16的Ms优选小于或等于约600emu/cm3。更优选地,Ms小于或等于约300emu/cm3。更加优选地,Ms小于或等于约50emu/cm3。可能的存储层17/低耦合磁性层16组合可以是,但不限于:600/300、900/600、500/50、450/350、600/450和900/400。
覆盖本实施方式中低耦合垂直磁性记录介质10的最外层是碳保护层18。碳保护层18的厚度根据低耦合垂直磁性记录介质10所需使用寿命和耐久度而变化。
图2说明了本发明的第二个优选实施方式。本实施方式中低耦合垂直磁性记录介质20包括基材11、粘结层12、软底层13、无定形层14、非磁性夹层15、存储层17、低耦合磁性层16和碳保护层。即,与第一实施方式不同,低耦合磁性层16在存储层17和碳保护层之间。而且,如在第一实施方式中,软底层13、无定形层14、非磁性夹层15、存储层17、低耦合磁性层16和碳保护层18可以包括多层。
图3说明了本发明的第三个优选实施方式。本实施方式中低耦合垂直磁记录介质30包括基材11、粘结层12、软底层13、无定形层14、非磁性夹层15、第一低耦合磁性层16a、存储层17、第二低耦合磁性层16b和碳保护层。即,与第一实施方式不同,低耦合磁性层16包括至少2层,它们由至少一层存储层17分隔。而且,软底层13、无定形层14、非磁性夹层15、第一低耦合磁性层16a、存储层17、第二低耦合磁性层16b和碳保护层18可以包括多层。
图4说明了本发明的第四个优选实施方式。本实施方式中低耦合垂直磁性记录介质30包括基材11、粘结层12、软底层13、无定形层14、非磁性夹层15、低耦合磁性层16、第一存储层17a、第二存储层17b和碳保护层。即,与第一实施方式不同,存储层17包括至少2层,它们由至少一层低耦合磁性层16分隔。而且,软底层13、无定形层14、非磁性夹层15、第一低耦合磁性层16、第一存储层17a、第二存储层17b和碳保护层18可以包括多层。
图5显示了Monte Carlo模拟,证实了本发明实施方式中改进的记录性质,所述实施方式具有hcp结晶结构的厚低耦合磁性层:Ms=50emu/cm3;位于非磁性夹层15和存储层17之间。具体的是,图5中所示的Monte Carlo模拟显示直接交换耦合(A*)很低且均匀的介质可以获得最佳的垂直介质记录性质,其中,A*包括值A*≈(0.05±0.03)*10-11J/m(图5)。这一直接交换耦合的值低源自多数溅射的Co合金薄膜的低饱和磁化强度(50emu/cc<Ms<300emu/cc)。模拟的假设包括:粒度分布σD/D≈0.1,其中,σD/D描述微结构,它包括平均粒径(D)限定的粒度和标准偏差(σD)限定的粒度变化;各向异性分布σHA/HA≈0.02,其中,HA是包含介质的颗粒的平均各向异性场,σHA是各向异性场的标准偏差;线密度为1270kfci。σD/D和σHA/HA的近似值是分别通过显微镜技术如TEM和SEM,和测磁学技术如Berger法和AC横向灵敏度实验测得的。线密度与各段长度简单相关,通过记录工艺来控制。
针对大量模型计算参数值,可以获得对具体模型计算参数所示的类似的模型结果趋势。基于这种模拟的结果,发明人断定在垂直介质结构中额外的低磁化强度的磁性层16在垂直介质中磁性层和颗粒之间提供较低的交换耦合,这将显著改进性能。通过改变低磁化饱和度的磁性层16的Ms,可以控制垂直记录介质中直接交换耦合的强度。模拟证实了低磁化强度的磁性层16的位置可以在非磁性夹层15和存储层17之间,或者在存储层17和碳保护层18之间。或者,低磁化强度磁性层16可以在多个存储层17(例如,图4中所示的17a和17b)之间或与它们相邻。或者,低磁化强度磁性层16可以包括多个低磁化强度层,如图3中所示的层16a和16b,可以位于夹层15和存储层17之间,以及在存储层17和碳保护层18之间。优选地,低磁化强度磁性层16的Ms低,即低于约600emu/cm3,以提供低交换耦合。更优选地,Ms低于约300emu/cm3。更加优选地,Ms低于约50emu/cm3。以上所述方式和其他方式均在以下权利要求所限定范围内。
Claims (21)
1.一种低耦合垂直磁性记录介质,它包括:
磁性存储层,和
至少一个低饱和磁化强度层,
其中,所述磁性存储层的饱和磁化强度约为400-900emu/cm3,所述至少一个低饱和磁化强度层的饱和磁化强度低于磁性存储层的饱和磁化强度。
2.如权利要求1所述的低耦合垂直磁性记录介质,其特征在于,它还包括:
基材;
至少一层软底层;
至少一层非磁性夹层;
至少一层存储层;和
碳保护层。
3.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,它还包括粘结层,选自包括Cr、Ni、Ta、Ti和它们合金的材料。
4.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述至少一层软底层包含Fe和Co中的至少一种和选自Ni、B、P、Si、C、Zr、Nb、Hf、Ta、Al、Si、Cu、Ag、Au中的一种或多种元素。
5.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,它还包括至少一层无定形层,其中,所述至少一层无定形层包含包括Ta、Ti、Ni、Cr、Zr、Nb和P的元素和合金,或者无定形铁磁体材料;该无定形铁磁体材料包含铁和选自Co、B、P、Si、C、Zr、Nb、Hf、Ta、Al、Si、Cu、Ag和Au的一种或多种元素。
6.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述至少一层非磁性夹层包括选自Cu、Ag、Au、Ir、Ni、Pt、Pd或其合金的fcc层
7.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述至少一层非磁性夹层包括选自Co、Ru、Re、Hf、Ti、Zr和其合金,或者CoCr和选自Ta、B、Pt、Nb、Ru和Zr的一种或多种元素的hcp层。
8.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述至少一层存储层包括磁性层,选自Co和选自Pt、Cr、Ta、B、Cu、W、Mo、Ru、Ni、Nb、Zr、Hf中的一种或多种元素。
9.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述至少一层存储层包含一种或多种氧化物,选自Si、Ti、Zr、Al、Cr、Co、Nb、Mg或Zn的氧化物。
10.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述至少一层低饱和磁化强度磁性层包含Fe、Co、Ni中的至少一种和选自Cr、Pt、Ta、B、Ru、Cu、Ag、Au、W、Mo、Nb、Zr、Hf、Ti、Zn和Re中的一种或多种元素。
11.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述低饱和磁化强度磁性层位于所述至少一层非磁性夹层和至少一层存储层之间。
12.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述低饱和磁化强度磁性层位于至少一层存储层和碳保护层之间。
13.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,它包括位于至少一层非磁性夹层和至少一层低饱和磁化强度磁性层之间的第一存储层、和位于至少一层低饱和磁化强度磁性层和碳保护层之间的第二存储层。
14.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,它包括位于至少一层非磁性夹层和至少一层存储层之间的第一低饱和磁化强度磁性层、和位于至少一层存储层和碳保护层之间的第二低饱和磁化强度磁性层。
15.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述低饱和磁化强度磁性层的磁化强度低于300emu/cm3。
16.如权利要求2所述的低耦合垂直磁性记录介质,其特征在于,所述低饱和磁化强度磁性层的磁化强度低于50emu/cm3。
17.一种制造低耦合垂直磁性记录介质的方法,所述方法包括:
沉积软底层,
沉积非磁性夹层,
沉积磁性存储层,并
沉积低饱和磁化强度磁化层,其中,所述磁性存储层的饱和磁化强度约为400-900emu/cm3,所述低饱和磁化强度层的饱和磁化强度低于磁性存储层的饱和磁化强度。
18.如权利要求17所述的方法,其特征在于,它还包括在软底层上沉积无定形层。
19.如权利要求17所述的方法,其特征在于,它还包括沉积另一低饱和磁化强度磁性层。
20.一种包括获得存储介质的方法,其中,所处存储介质具有饱和磁化强度约为400-900emu/cm3的磁性存储层,所述低饱和磁化强度层的饱和磁化强度低于磁性存储层的饱和磁化强度。
21.如权利要求20所述的方法,其特征在于,所述磁性存储层的饱和磁化强度等于或大于600emu/cm3,所述至少一层低饱和磁化强度层的饱和磁化强度等于或低于300emu/cm3。
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JP2006155861A (ja) | 2004-10-29 | 2006-06-15 | Showa Denko Kk | 垂直磁気記録媒体及びその製造方法並びに磁気記録再生装置 |
US7736765B2 (en) * | 2004-12-28 | 2010-06-15 | Seagate Technology Llc | Granular perpendicular magnetic recording media with dual recording layer and method of fabricating same |
JP2006309922A (ja) | 2005-03-31 | 2006-11-09 | Fujitsu Ltd | 磁気記録媒体及び磁気記録装置 |
US7572527B2 (en) * | 2005-05-24 | 2009-08-11 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording medium with improved antiferromagnetically-coupled recording layer |
JP2007184066A (ja) * | 2006-01-10 | 2007-07-19 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体及びこれを用いた磁気記憶装置 |
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JP2007317304A (ja) * | 2006-05-25 | 2007-12-06 | Fujitsu Ltd | 磁気記録媒体および磁気記憶装置 |
JP4764308B2 (ja) | 2006-10-20 | 2011-08-31 | 株式会社東芝 | 垂直磁気記録媒体及び垂直磁気記録再生装置 |
JP2008176858A (ja) * | 2007-01-18 | 2008-07-31 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体、及びそれを用いたハードディスクドライブ |
JP2008269789A (ja) | 2008-08-12 | 2008-11-06 | Hitachi Ltd | 熱磁気記録媒体 |
-
2008
- 2008-11-17 US US12/272,662 patent/US7867637B2/en active Active
-
2009
- 2009-11-16 GB GB1109691A patent/GB2477696A/en not_active Withdrawn
- 2009-11-16 SG SG2012084497A patent/SG186006A1/en unknown
- 2009-11-16 WO PCT/US2009/064615 patent/WO2010057111A1/en active Application Filing
- 2009-11-16 JP JP2011536562A patent/JP2012509547A/ja not_active Ceased
- 2009-11-16 CN CN2009801464706A patent/CN102216986A/zh active Pending
- 2009-11-16 DE DE112009004388T patent/DE112009004388T5/de not_active Withdrawn
- 2009-11-16 KR KR1020117014049A patent/KR20110095377A/ko not_active Application Discontinuation
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2010
- 2010-12-08 US US12/963,244 patent/US8257844B2/en active Active
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2012
- 2012-08-31 US US13/601,553 patent/US8709619B2/en active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111971745A (zh) * | 2018-03-28 | 2020-11-20 | Jx金属株式会社 | 垂直磁记录介质 |
CN111971745B (zh) * | 2018-03-28 | 2022-05-10 | Jx金属株式会社 | 垂直磁记录介质 |
Also Published As
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US20100124671A1 (en) | 2010-05-20 |
US20110076515A1 (en) | 2011-03-31 |
GB2477696A (en) | 2011-08-10 |
SG186006A1 (en) | 2012-12-28 |
US20130045394A1 (en) | 2013-02-21 |
WO2010057111A1 (en) | 2010-05-20 |
US8709619B2 (en) | 2014-04-29 |
GB201109691D0 (en) | 2011-07-27 |
US7867637B2 (en) | 2011-01-11 |
US8257844B2 (en) | 2012-09-04 |
JP2012509547A (ja) | 2012-04-19 |
JP2013058303A (ja) | 2013-03-28 |
KR20110095377A (ko) | 2011-08-24 |
DE112009004388T5 (de) | 2012-05-24 |
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