CN102194911A - 防止有害的太阳能电池极化 - Google Patents
防止有害的太阳能电池极化 Download PDFInfo
- Publication number
- CN102194911A CN102194911A CN2011101170449A CN201110117044A CN102194911A CN 102194911 A CN102194911 A CN 102194911A CN 2011101170449 A CN2011101170449 A CN 2011101170449A CN 201110117044 A CN201110117044 A CN 201110117044A CN 102194911 A CN102194911 A CN 102194911A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- solar
- module array
- cell module
- passivation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000010287 polarization Effects 0.000 title claims description 32
- 238000002161 passivation Methods 0.000 claims abstract description 47
- 238000000576 coating method Methods 0.000 claims description 49
- 239000011248 coating agent Substances 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000009792 diffusion process Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000008393 encapsulating agent Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims 2
- 239000006117 anti-reflective coating Substances 0.000 abstract description 20
- 239000004020 conductor Substances 0.000 abstract description 3
- 230000034964 establishment of cell polarity Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 71
- 235000012431 wafers Nutrition 0.000 description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000005038 ethylene vinyl acetate Substances 0.000 description 7
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920002620 polyvinyl fluoride Polymers 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- BFMKFCLXZSUVPI-UHFFFAOYSA-N ethyl but-3-enoate Chemical compound CCOC(=O)CC=C BFMKFCLXZSUVPI-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/38—Arrangements for parallely feeding a single network by two or more generators, converters or transformers
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
- H02S30/10—Frame structures
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/32—Electrical components comprising DC/AC inverter means associated with the PV module itself, e.g. AC modules
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
- H02S40/30—Electrical components
- H02S40/36—Electrical components characterised by special electrical interconnection means between two or more PV modules, e.g. electrical module-to-module connection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/56—Power conversion systems, e.g. maximum power point trackers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Abstract
在一个实施例中,通过提供从太阳能电池(200B)的正面向晶片(203)的本体泄放电荷的导电通路来防止有害的太阳能电池极化或者使之最小。例如,导电通路可以包括介质钝化层(202B)中图案化的孔、导电抗反射涂层或在抗反射涂层的顶部或底部表面上所形成的导电材料层。也可以通过偏置太阳能电池组件在太阳能电池的正面上的区来防止有害的太阳能电池极化。
Description
本申请是基于申请日为2006年1月20日、申请号为200680006818.8(国际申请号为PCT/US2006/002137)、发明创造名称为“防止有害的太阳能电池极化”的中国专利申请的分案申请。
相关申请的相互引用
本发明要求2005年3月3日提交的美国临时申请No.60/658,706的权益,该申请全文在此通过引用被纳入。
技术领域
本发明一般涉及太阳能电池,更具体地但不排他地涉及太阳能电池结构、组件、制造和现场安装。
背景技术
太阳能电池是众所周知的用于将太阳辐射转换成电能的设备。所述太阳能电池可以利用半导体处理工艺在半导体晶片上制造。一般来说,太阳能电池可以通过在硅衬底上形成p型区和n型区来制造。每一相邻的p型区和n型区都形成p-n结。照射在太阳能电池上的太阳辐射生成迁移到p型和n型区的电子和空穴。由此产生跨p-n结的电压差。在背面接触太阳能电池中,p型和n型区耦合到在太阳能电池背面上的金属接触,以便允许外部电路或设备耦合到太阳能电池和由太阳能电池供电。背面接触太阳能电池也在美国专利No.5,053,083和No.4,927,770中予以公开,两者全文在此通过引用被纳入。
若干太阳能电池可以连接在一起以形成太阳能电池阵列。太阳能电池阵列可以封装成太阳能电池组件。该组件包括允许太阳能电池阵列经受环境条件和用于现场的保护层。如果没采取预防措施,太阳能电池在现场可能被高度极化,造成减小的输出功率。在这里公开了用于防止有害的太阳能电池极化的技术。
发明内容
在一个实施例中,通过提供从太阳能电池的正面到晶片的本体(bulk)泄放电荷的导电通路来防止有害的太阳能电池极化或者使之最小。例如,导电通路可以包括介质钝化层中的图案化的孔、导电抗反射涂层或在抗反射涂层的顶部或底部表面上所形成的导电材料层。也可以通过偏置太阳能电池组件在太阳能电池的正面上的区来防止有害的太阳能电池极化。
基于阅读本公开的整体,对具有本领域普通技术的人员来说,本发明的这些和其他特征将是显而易见的,本公开的整体包括附图和权利要求书。
附图说明
图1表示可利用本发明实施例的实例太阳能电池组件的分解图。
图2示意地表示图1的太阳能电池组件的截面。
图3A和图3B表示发明人认为造成太阳能电池极化的机制的模型。
图4A、图4B、图5A、图5B、图5C、图5D和图6示意地表示出按照本发明的实施例的太阳能电池的截面。
图7A示意地表示按照本发明的实施例的太阳能电池组件。
图7B和7C示意地表示按照本发明的实施例的太阳能系统。
在不同的附图中相同参考标号的使用表明相同或相似的部件。除非另加注解,否则附图不必按比例绘制。
具体实施方式
在本公开中,为提供对本发明实施例的彻底了解,提供了许多具体细节,诸如装置、部件和方法。然而,本领域普通技术人员会认识到,本发明在没有一个或多个这些具体细节的情况下也能得以实施。在其他情形下,为避免使本发明的各方面晦涩,未示出或者描述众所周知的细节。
现在参照图1,示出了可利用本发明实施例的实例太阳能电池组件100的分解图。这样的太阳能电池组件也在共同转让的于2003年8月1日所提交的美国申请No.10/633,188中被公开。然而要注意到,本发明的实施例对其他太阳能电池组件也是适用的。
在图1的例子中,该太阳能电池组件100包括透明罩104、封装物103(即103-1、103-2)、包含互连的太阳能电池200的太阳能电池阵列110以及背板102。由于该太阳能电池组件100典型地在固定应用中得以使用,例如在屋顶上或者为发电站所使用,所以它是所谓的“陆上太阳能电池组件”。因此,该太阳能电池组件100装有面向太阳的透明罩104。在一个实施例中,透明罩104包括玻璃。太阳能电池200的正面通过透明罩104朝向太阳。封装物103横向连接并结合太阳能电池200、罩104以及背板102以形成保护封装。在一个实施例中,封装物103包含乙烯-醋酸乙烯共聚物(poly-ethyl-vinyl acetate,“EVA”)。
太阳能电池200的背面面向附到封装物103-1上的背板102。在一个实施例中,背板102包含出自Madico公司的Tedlar/聚酯(Polyester)/EVA(“TPE”)。在TPE中,Tedlar是保护免遭环境影响的最外层,聚酯提供额外的电绝缘,EVA是促进对封装物103-1的附着力的非横向连接薄层。用作背板102的TPE的替代物包括例如Tedlar/聚酯/Tedlar(TPT)。
图2示意地表示出太阳能电池组件100的截面。为理解容易,图2已用范例材料注释。然而要注意到,在无损本发明的优点的情况下也可以采用其他材料。为了本公开的目的,太阳能电池的正面包含在晶片203的正面上(即从钝化层202向罩104)的材料、部件以及特征,而太阳能电池的背面包含在晶片203的背面上(即从掺杂区204向背板102)的材料、部件以及特征。太阳能电池200的正面上的材料被配置用以在正常工作期间面向太阳。太阳能电池200的正面上的材料就本性或厚度而言是透明的,以便允许太阳辐射射过。
在图2的例子中,晶片203包括带有n型正面扩散区207的n型硅晶片。正面扩散区207已示意地用虚线分开以表明它处于晶片203的硅之中。介质钝化层(dielectric passivation layer)202在图2的例子中包含二氧化硅,该介质钝化层202在晶片203的正面上形成。抗反射涂层(anti-reflective coating,“ARC”)201在介质钝化层202的顶部形成。在一个实施例中,抗反射涂层201包含通过等离子体增强型化学气相沉积(PECVD)所形成的厚度约为400埃的氮化硅。在一个实施例中,钝化层202包含所形成的厚度约为200埃的二氧化硅。钝化层202可以通过高温氧化直接在晶片203的顶部表面上生长。
在图2的例子中,用作太阳能电池200的电荷收集结的p型掺杂(“P+”)和n型掺杂(“N+”)区204在晶片203中形成。在无损本发明的优点的情况下,p型和n型掺杂区204也可以在晶片203外部形成,例如在晶片203背面上所形成的层之中。金属接触206在太阳能电池200的背面上形成,其中每个金属接触206都耦合到相应的p型或n型掺杂的收集区。氧化物层205被图案化(pattern)以允许金属接触206连接到掺杂区204。典型地,金属接触206连接到太阳能电池阵列110中的其他太阳能电池200的金属接触。金属接触206允许外部电路或设备从太阳能电池组件100接收电流。太阳能电池200是背面接触太阳能电池,因为所有到其收集区的电连接都在其背面形成。
如在图2中所示,太阳能电池200通过背板102、封装物103以及罩104保护。构架(frame)211包围太阳能电池200和其保护层。在某些状况下,基本上可以降低太阳能电池组件100的输出功率产生能力。由于太阳能电池组件100可以例如通过在有利的电流流通方向上用高电压偏置太阳能电池组件100而恢复回到其原始状况,所以输出功率的所述减少是可逆的。发明人认为,这种输出功率减少是由于在电荷如箭头212所示从太阳能电池200的正面向构架211泄漏时,太阳能电池200被极化。在一个例子中,正电荷载流子从太阳能电池200的正面泄漏,由此让抗反射涂层201的表面带负电。在抗反射涂层201的表面上的负电荷吸引带正电的光生空穴(positively charged light generated hole),所述带正电的光生空穴中的一些同n型硅晶片203中的电子重组合,而不是在掺杂收集区处被收集。
因为太阳能电池200具有n型正面扩散区,所以当在场中(in the field)介质钝化层202具有电场极性,使得电子被排斥、而空穴被吸引到在介质钝化层202和正面扩散区207之间的界面时、也就是说当介质钝化层202的电位比正面扩散区207小时,有害的极化可能发生。在场工作中,在以相对地的正电压操作太阳能电池200时,这将会发生。在太阳能电池具有p型正面扩散区的其他实施例中,当太阳能电池在场中相对地变成负偏置的(即成为更负的)时,有害的极化可能发生。如众所周知的,可以掺杂p型硅晶片以具有n型正面扩散区。同样地,可以掺杂n型硅晶片以具有p型正面扩散区。虽然实例太阳能电池200具有n型硅晶片中的n型正面扩散区,但本发明的教导可适于其他类型的太阳能电池衬底。
图3A示意地表示出发明人认为是造成太阳能电池极化原因的机制的模型。在图3A的模型中,电流通过玻璃(例如罩104)的正面流向太阳能电池或者从太阳能电池流出,并且通过旁路泄漏到太阳能电池的背面。电阻Rgl代表从氮化物ARC(例如抗反射涂层201)到玻璃正面的泄漏电阻,Rsh是从氮化物ARC到太阳能电池的背面的旁路泄漏。实际上,将会有跨太阳能电池出现的分布式电压,所述分布式电压在边缘以低值开始并且朝着中间增大。在任何情况下,氮化物ARC至硅晶片电压不应该超过氧化物击穿电压。在图3A和3B中,电容“C”代表包括用作电介质的氧化物钝化层(例如介质钝化层202)、用作第一电容器板的氮化物ARC以及用作第二电容器板的硅晶片的电容器。
图3B示意地表示出图3A结构的集总元件近似等效电路。为该分析的目的,给电压加参考符号到太阳能电池的背面。假定起始栅极电压是零的对该电路的瞬时解由方程式EQ.1表示:
EQ.1
其中并且Req是并联等效电阻。VG代表正面EVA封装物上的电压,所述EVA封装物如同金属氧化物半导体(MOS)晶体管的栅极。MOS晶体管的栅极氧化物是氧化物介质钝化层。如所述,电容“C”代表由氮化物ARC、氧化物钝化层和硅晶片所组成的电容器。
一旦对太阳能电池加电,栅极(即正面EVA封装物)将斜面上升并且达到电压VT,这引起在由方程式EQ.2所表示的降解(degradation)时间tdeg后的某一降解量:
EQ.2
EQ.3
从方程式EQ.3能容易地看出,对于高电压,到特定降解量的时间与所施加的电压成反比。
栅极电压针对零施加电压的恢复由EQ.4给出:
EQ.4 VG(t)=VG(0)e-l/τ
如果VT是出现可忽略的降解的阈值,则恢复时间trec由方程式EQ.5给出:
EQ.5
紫外射线将会具有添加与现有电阻并联的附加旁路电阻的效应。这可以通过假定紫外线从氮化物ARC向硅晶片注入电子的速率与陷阱电子密度成比例来看出。但是,跨电容器“C”的电压(见图3B)与陷阱电荷(trapped charge)成比例,因此,电流与栅极电容器上的电压成比例,即电阻似的。假定与其他旁路相比较这个电阻小(为了具有效应,必须是这样的),则在光亮中的恢复时间trec,light由方程式EQ.6给出:
EQ.6
可以计算对足以阻止太阳能电池组件降解的紫外线感应旁路所必要的条件。这需要满足由EQ.7所给出的条件:
EQ.7
能重安排上列方程以表明在由方程式EQ.8给出在光亮中的恢复时间时满足EQ.7:
EQ.8
换言之,如果太阳能电池组件100在阳光下在无偏置的情况下在比该太阳能电池组件在存在所施加的偏压情况下在黑暗中降解所花费的时间短的时间内恢复,则该组件在阳光下在存在所施加的偏压情况下将是稳定的。
在一些实施例中,通过增加正面抗反射涂层/钝化层栈中的垂直电导率来防止有害的太阳能电池极化或使之最小。在这些实施例中,电荷从太阳能电池的正面泄放到晶片的本体。现在参照图4A和4B描述这些实施例。
图4A示意地表示出按照本发明的实施例的太阳能电池200A的截面。太阳能电池200A是在图2中所示的太阳能电池200的特定实施例。除了使用很薄的氧化物(即二氧化硅)层202A作为钝化层202和使用抗反射涂层201A作为抗反射涂层201外,太阳能电池200A与太阳能电池200相同。在图4A的例子中,抗反射涂层201A可以包含具有约400埃厚的碳化硅,并且晶片203包括N型硅晶片。薄氧化物层202A优选地足够薄以将电荷泄放到晶片的本体,以便防止电荷累积以及使得在它出现相对高的电压时发生氧化物击穿。薄氧化物层202A可以直接在晶片203上形成。在一个实施例中,利用臭氧氧化物工艺来形成厚度约为10埃到20埃的薄氧化物层202A,所述臭氧氧化物工艺包括在包含悬浮在去离子水中的臭氧的槽中浸渍晶片203。
图4B示意地表示出按照本发明的实施例的太阳能电池200B的截面。太阳能电池200B是在图2中所示的太阳能电池200的特定实施例。除了使用图案化的介质钝化层202B作为钝化层202外,太阳能电池200B与太阳能电池200相同。在图4B的例子中,钝化层202B包含二氧化硅,抗反射涂层201包含氮化硅,以及晶片203包括N型硅晶片。如在图4B中所示,钝化层202B已被图案化以具有允许氮化硅抗反射涂层201接触硅晶片203的孔。这允许抗反射涂层201上的电荷通过氧化物钝化层202B中图案化的孔而泄放到晶片203的本体。钝化层202B中的每个孔可以利用传统的光刻工艺来形成并且与可用光刻设备所允许的那样小。图案化的孔互相分离例如约0.1mm到约0.2mm。通过防止在抗反射涂层201中的电荷累积,穿孔的钝化层202B有利地防止太阳能电池极化。
在一些实施例中,为防止太阳能电池极化,增加在太阳能电池的正面上和朝向其边缘的横向电导。因为钝化层具有穿过所述钝化层的自然缺陷(自然形成的孔),所以对于导电抗反射涂层而言可能的是通过这些缺陷将积聚的电荷泄放到晶片的本体。然而,一些太阳能电池抗反射涂层可能不具有足以使这发生的导电性。因此,在一些实施例中,横向形成导电层,以接触抗反射涂层来允许电荷通过该导电层和钝化层中的自然缺陷而从抗反射涂层泄放到晶片的本体。在其他实施例中,抗反射涂层本身是充分导电的。现在参照图5A-5D描述这些实施例。
图5A示意地表示出按照本发明的实施例的太阳能电池200C的截面。太阳能电池200C是在图2中所示的太阳能电池200的特定实施例。除了在抗反射涂层201的顶部表面上形成透明的导电涂层501外,太阳能电池200C与太阳能电池200相同。在图5A的例子中,钝化层202包含二氧化硅,抗反射涂层201包含氮化硅,以及晶片203包括N型硅晶片。在一个实施例中,透明的导电涂层501包括导电有机涂层,例如PEDOT/PSS(Baytron-P)涂层。可以在抗反射涂层201的顶部直接喷涂或丝网印刷透明的导电涂层501。透明的导电涂层501可以形成例如约为100埃的厚度。仅仅在封装前,作为太阳能电池制造工艺中的最后步骤可以把透明的导电涂层501施加在太阳能电池200上。
因为氮化硅抗反射涂层201不是充分导电的,所以氮化硅中的电荷只能迁移短的距离,该距离不足以到达钝化层202中的自然缺陷(defect)。透明的导电涂层501允许抗反射涂层201中的电荷迁移足以到达钝化层202中的自然缺陷的距离并且泄放到晶片203的本体。
图5B示意地表示出按照本发明的实施例的太阳能电池200D的截面。太阳能电池200D是在图2中所示的太阳能电池200的特定实施例。除了导电抗反射涂层(ARC)201B用作抗反射涂层201外,太阳能电池200D与太阳能电池200相同。在图5B的例子中,钝化层202包含二氧化硅,晶片203包括N型硅晶片。导电ARC 201B通过防止电荷在其之中积聚而有利地使太阳能电池极化最小。导电ARC 201B中的电荷可以通过钝化层202中的自然缺陷而泄放到晶片的本体。
在一个实施例中,导电ARC 201B包括自然导电(即在不添加杂质的情况下导电)的抗反射涂层,例如二氧化钛(TiO2)。
在其他实施例中,导电ARC 201B包含通过添加杂质而成为导电的非导电抗反射材料。如此做的一种方式是,在抗反射材料在钝化层202上形成期间从金属气体源添加金属杂质。例如,导电ARC 201B可以包含用氟掺杂的氧化锡(SnO:F)、用硼掺杂的氧化锌(ZnO:B)或者用磷或硼掺杂的碳化硅(SiC:P)或(SiC:B)。作为特定的例子,通过在淀积期间在添加磷化氢气体(PH3)或乙硼烷气体(B2H6)情况下碳化硅(SiC)的等离子体增强型化学气相沉积(PECVD)可以形成厚度约为400埃的导电ARC 201B。
图5C示意地表示出按照本发明的实施例的太阳能电池200E的截面。太阳能电池200E是在图2中所示的太阳能电池200的特定实施例。除了在抗反射涂层201的顶部上形成透明的导电层502外,太阳能电池200E与太阳能电池200相同。在图5C的例子中,钝化层202包含二氧化硅,抗反射涂层201包含氮化硅,以及硅晶片203包括N型晶片。像太阳能电池200C的导电涂层501(图5A)一样,透明的导电层502允许抗反射涂层201中的电荷迁移足以到达钝化层202中的自然缺陷的距离和泄放到晶片203的本体。
可以直接在抗反射涂层201上蒸发、溅射或沉积透明的导电层502。透明的导电层502可以包含透明的导电氧化物,例如所形成的厚度约为200埃的用氟掺杂的氧化锡(SnO:F)、用硼掺杂的氧化锌(ZnO:B)或者用磷或硼掺杂的碳化硅(SiC:P)或(SiC:B)。
图5D示意地表示出按照本发明的实施例的太阳能电池200F的截面。太阳能电池200F是在图2中所示的太阳能电池200的特定实施例。除了在钝化层202和抗反射涂层201之间形成相对薄(例如约200埃)的导电层503外,太阳能电池200F与太阳能电池200相同。在图5D的例子中,钝化层202包含二氧化硅,抗反射涂层201包含氮化硅,以及硅晶片203包括N型晶片。薄的导电层503允许电荷从抗反射涂层201泄放到薄的导电层503并且通过钝化层202中的自然缺陷泄放到晶片203的本体。在一个实施例中,导电层503包含直接在钝化层202的顶部表面上所形成的厚度约为200埃的多晶硅。抗反射涂层201可以在导电层503的表面上直接形成。导电层503可以在形成抗反射涂层201的情况下通过PECVD和就地(即在一次装载中在相同的腔或聚集装置(cluster tool)中)形成。导电层503也可以包含所形成的厚度约为200埃的用氟掺杂的氧化锡(SnO:F)、用硼掺杂的氧化锌(ZnO:B)或者用磷或硼掺杂的碳化硅(SiC:P)或(SiC:B)。
在图4和5的实施例中,为了防止有害的太阳能电池极化,增加从太阳能电池正面到晶片本体的电导率。这等效于降低图3B的模型中的旁路电阻Rsh。在其他实施例中,为了防止电荷泄漏,通过透明罩增加从太阳能电池正面到组件的其余部分的电阻。这等效于增加图3B的模型中的电阻Rgl。通过堵塞电荷泄漏通路可以增加从太阳能电池正面到太阳能电池组件的其余部分的电阻,如现在参照图6所描述的。
图6示意地表示出按照本发明的实施例的太阳能电池200G的截面。太阳能电池200G是在图2中所示的太阳能电池200的特定实施例。除了透明的电绝缘体层691在抗反射涂层201上方形成之外,太阳能电池200G与太阳能电池200相同。在图6的例子中,钝化层202包含二氧化硅,抗反射涂层201包含氮化硅,以及硅晶片203包括N型晶片。电绝缘体层691在抗反射涂层201上方形成,以通过防止电荷从太阳能电池200G的正面向罩104泄漏出来(见图2)来防止太阳能电池极化。在一个实施例中,电绝缘体层691包含通过常压化学气相沉积(atmospheric pressure chemical vapor depositioin,APCVD)所形成的约0.1到1.0μm厚度的二氧化硅(SiO2)。
通过偏置太阳能电池组件在太阳能电池的正面上的区,也可以防止有害的太阳能电池极化,如现在参照图7A所讨论的。
图7A示意地表示出按照本发明的实施例的太阳能电池组件100A。太阳能电池组件100A是在图2中所示的太阳能电池组件100的特定实施例。在图7A中示出了若干太阳能电池200连同其互连200。互连200把一个太阳能电池200串行连接到另一个。除了添加导电通路来停止在电池正面的组件部分的电位以防有害的泄漏电流(即,对于n型电池组件在30V之上、之处或之内)外,太阳能电池组件100A与太阳能电池组件100基本上相同。在一个实施例中,通过在透明罩104(例如玻璃)的背部表面上放置透明导电层684并且把该导电层684连接到太阳能电池200的背部表面来形成导电通路。在图7A的例子中,通过电连接683把导电层684连接到互连682,所述互连682连接到太阳能电池200的背面。在图7A的例子中,优选实施例是,导电层684连接到互连682,所述互连对于具有n型正面扩散区的电池连接到阵列中的最高(即最正)或接近最高电位的太阳能电池200以及对于具有p型正面扩散区的电池连接到阵列中的最低(即最负)或接近最负电位的太阳能电池200。导电层684与太阳能电池组件100A的构架绝缘,以防止高电压处在组件外部上的不安全状况。导电层684可以包含用氟掺杂的氧化锡(SnO:F)、氧化铟锡(ITO)、氧化锌(ZnO)或者其他透明氧化物或透明有机导体。在优选实施例中,该导电层具有大约5e4欧姆/平方的板电阻。如前述,背板102在封装物103的底部表面上形成。在可替代的实施例中,把封装物103做成导电的,以在太阳能电池200之上形成近等电位场;在组件边缘处的封装物保持电绝缘,以防止高电压处在组件外部上的不安全状况。
在系统等级方法中,考虑整个太阳能系统以防止电荷从太阳能电池的正面泄露。例如,可以偏置太阳能电池组件阵列,使得电荷载流子从太阳能电池正面的泄漏被防止。现在参照图7B和7C描述针对太阳能电池极化问题的实例系统等级方法。
图7B示意地说明按照本发明的实施例的太阳能系统790。在图7B的例子中,太阳能电池组件阵列630具有若干包括互连的太阳能电池200的太阳能电池组件。太阳能电池组件阵列630的正输出端子被标注为节点616,而其负输出端子被标注为节点617。在图7B的例子中,太阳能电池200是串联连接的,使得所述太阳能电池的正端子朝向节点616,而所述太阳能电池的负端子朝向节点617。可以存在与图7B中所示的所述串联并联的其他串联连接的太阳能电池200。
在图7B的例子中,太阳能电池组件阵列630与逆变器600耦合。逆变器把直流(DC)变换成交流(AC)。在太阳能系统790中,逆变器600从太阳能电池组件阵列630接收直流,并且将交流输出给电网。如在图7B中所示,DC到DC转换器601把来自太阳能电池组件阵列630的直流转换成另一直流。DC到DC转换器601的直流输出通过DC到AC转换器602转换成交流。DC到AC转换器602的交流输出通过隔离电路603被提供给电网。可替代地,隔离电路603可以串联在DC到DC转换器601和DC到AC转换器602之间。
在太阳能系统790中,太阳能电池阵列组件630的正端子接地。与太阳能系统790类似的系统可以跟其他国家一起在北美和日本使用。代表太阳能电池组件阵列630中的所有太阳能电池组件的构架的构架614也接地,如标号611所示。把太阳能电池组件阵列630的正端子和构架614接地使太阳能电池200和构架614之间的电位减少,使从太阳能电池200的正面的泄漏最少。太阳能电池组件阵列630的正端子可以在逆变器600之内或之外连接到地。
在图7B的例子中,每个太阳能电池200都具有n型正面扩散区。在这种情况下,有害的太阳能电池极化发生,原因在于太阳能电池200相对地变为正偏置的。为了防止有害的极化,太阳能电池组件阵列630的最高或接近最高电位(在这种情况下是节点616)相应地被连接到地。在太阳能电池具有p型正面扩散区的其他实施例中,太阳能电池相对地变为负偏置的时,有害的极化可能发生。在该情况下,阵列中最低或接近最低电位太阳能电池(例如太阳能电池组件阵列的负输出端子)可以被连接到地以防止有害的太阳能电池极化。
图7C示意地说明按照本发明的实施例的太阳能系统795。在图7C的例子中,太阳能电池组件阵列630具有若干包括多个互连的太阳能电池200的太阳能电池组件。太阳能电池组件阵列630的正输出端子被标注为节点616,而其负输出端子被标注为节点617。在图7C的例子中,太阳能电池200是串联连接的,使得所述太阳能电池的正端子朝向节点616,而所述太阳能电池的负端子朝向节点617。可以存在与图7C中所示的所述串联并联的其他串联连接的太阳能电池200。
在图7C的例子中,太阳能电池组件阵列630与逆变器650耦合。逆变器650从太阳能电池组件阵列630接收直流,并且将交流输出给电网。如在图7C中所示,DC到DC转换器651把来自太阳能电池组件阵列630的直流转换成另一直流。DC到DC转换器651的直流输出端由隔离电路653耦合到DC到AC转换器652。DC到AC转换器652的交流输出被提供给电网。可替代地,隔离电路653可位于DC到AC转换器652的输出端处以将AC输出提供给电网。与太阳能系统795类似的系统可以在IEC规范所涵盖的国家中被开发,例如大多欧洲国家、英国及其他。
在图7C的例子中,太阳能电池阵列组件630的输出被平衡到+/-1/2(即正/负二分之一)太阳能电池组件阵列630的总电压值。也就是说,在节点616处的电压理想地是太阳能电池组件阵列630的总电压的+1/2,而在节点617处的电压理想地是太阳能电池组件阵列630的总电压的-1/2。电阻器672和673是高值电阻器(或变阻器),所述高值电阻器平衡太阳能电池组件阵列630在接地点附近的输出。实际上,太阳能电池组件阵列630的输出只是近似地被平衡,因为平衡电阻器672和673具有高电阻(例如各约为10MΩ)。
在典型的安装中,太阳能电池组件阵列630可能是浮动的,因为没有电阻器671,并且逆变器650具有在太阳能电池组件阵列630的输出端和至电网的AC输出端之间的DC-DC隔离。然而,发明人已经发现,这样的安装将引起太阳能电池200的有害极化。在一个实施例中,太阳能电池组件阵列630的正端子通过电阻器671连接到地。在无损于本发明的优点的情况下,电阻器671可以是固定的、可变的或电控的电阻。电阻器671偏置太阳能电池组件阵列630更接近于其输出的正侧,以防止正电荷从太阳能电池200的正面泄漏。换言之,电阻器671使太阳能电池组件阵列630向正“失衡”,以防止太阳能电池极化。同样地,如果太阳能电池极化是由从太阳能电池200的正面的电子(而不是正电荷)泄漏引起的,则节点617(而不是节点616)可以通过电阻器671连接到地,以朝向其负输出端来偏置太阳能电池组件阵列630。电阻器671可以具有约≤平衡电阻器(即电阻器672或673)的值的1/10th的电阻。要注意的是,逆变器650也可以如此配置,使得所述逆变器根据泄漏电荷载流子(即电子或空穴)的极性而使太阳能电池组件阵列630的平衡输出向正或负失衡。例如,电阻器672的值可以相对电阻器673予以增加,以便在不使用电阻器671的情况下使太阳能电池组件阵列630的输出失衡。
电阻器671也可以包括电子控制的电阻。例如,电阻器671的电阻可以通过根据条件在不同电阻值中切换而由电子电路控制。例如,这样的电子电路可以具有传感器,其中在太阳能电池组件阵列电阻减小到地电平时,例如在下雨时,该传感器检测何时需要较低电阻。
在图7C的例子中,每个太阳能电池200都具有n型正面扩散区。在这种情况下,有害的太阳能电池极化发生,因为太阳能电池200相对地变为正偏置的。为了防止有害的极化,太阳能电池组件阵列630的最高或接近最高电位(在这种情况下是节点616)通过电阻(例如电阻器671)相应地连接到地。在太阳能电池具有p型正面扩散区的其他实施例中,在太阳能电池相对地变为负偏置的时,有害的极化可能发生。在该情况下,阵列中最低或接近最低电位太阳能电池(例如太阳能电池组件阵列的负输出端子)可以通过电阻连接到地以防止有害的太阳能电池极化。
已公开了用于防止有害的太阳能电池极化的技术。虽然已提供了本发明的特定实施例,但应理解的是,这些实施例是用于说明目的而不是限制性的。对于阅读本公开的本领域普通技术的人员来说,许多附加的实施例将是显而易见的。
Claims (9)
1.一种太阳能电池组件,包括:
a)多个串联连接的太阳能电池,所述多个太阳能电池中的至少一个太阳能电池具有正面和背面,该太阳能电池的正面在正常工作期间面向太阳,该太阳能电池包括:
(i)在太阳能电池的背面上所形成的多个金属接触,所述金属接触中的每一个都耦合到太阳能电池中的相应p型掺杂的或n型掺杂的收集区;
(ii)直接在面向太阳能电池正面的硅晶片表面上所形成的介质钝化层;和
(iii)在介质钝化层上方所形成的抗反射涂层;
b)以保护方式覆盖多个太阳能电池的封装物;
c)在多个太阳能电池的正面上方的透明罩;
d)在透明罩和太阳能电池正面上的介质钝化层之间的导电层,该导电层电耦合到太阳能电池背面上的金属接触用以通过经由介质钝化层泄放电荷来防止太阳能电池极化。
2.权利要求1的太阳能电池组件,其中透明罩包括玻璃。
3.权利要求1的太阳能电池组件,其中,太阳能电池具有n型正面扩散区并且太阳能电池处在比多个太阳能电池中的最低电位太阳能电池较正的电位。
4.一种太阳能电池能量系统,包括:
a)多个太阳能电池,所述太阳能电池中的每一个都包括:
(i)正面和背面,所述正面在正常工作期间面向太阳;
(ii)在背面上所形成的多个金属接触,所述金属接触中的每一个都耦合到太阳能电池的相应p型掺杂的或n型掺杂的收集区;
(iii)在正常工作期间面向太阳的晶片表面上方所形成的介质钝化层;以及
(iv)在介质钝化层上方所形成的抗反射涂层;
b)包括多个太阳能电池的太阳能电池组件阵列,所述太阳能电池组件阵列具有处在正电压的正端子和处在负电压的负端子;
c)至太阳能电池组件阵列中的太阳能电池组件的构架的接地连接;
d)逆变器,其被配置用以将由太阳能电池组件阵列所产生的直流转换成要被提供到电网的交流,该逆变器具有耦合到太阳能电池组件阵列的正端子的正端子和耦合到太阳能电池组件阵列的负端子的负端子;
其中,太阳能电池组件阵列被偏置,使得防止电荷从太阳电池的正面泄漏到太阳能电池组件的构架。
5.权利要求4的太阳能电池能量系统,其中,逆变器被配置以从太阳能电池组件阵列接收平衡电压,并且还包括:
电阻,所述电阻把太阳能电池组件阵列的端子耦合到地以使来自太阳能电池组件阵列的平衡电压失衡,使得防止电荷从太阳能电池的正面泄漏。
6.权利要求5的太阳能电池能量系统,其中,电阻把太阳能电池组件阵列的正端子耦合到地。
7.权利要求4的太阳能电池能量系统,其中多个太阳能电池中的每一个太阳能电池都具有n型正面扩散区,以及其中通过把太阳能电池组件阵列的正端子连接到地电位来偏置太阳能电池组件阵列。
8.权利要求4的太阳能电池能量系统,其中多个太阳能电池中的每一个太阳能电池都具有p型正面扩散区,以及其中通过把太阳能电池组件阵列的负端子连接到地电位来偏置太阳能电池组件阵列。
9.权利要求7的太阳能电池能量系统,其中通过电阻把太阳能电池组件阵列的正端子连接到地。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US65870605P | 2005-03-03 | 2005-03-03 | |
US60/658,706 | 2005-03-03 | ||
US11/210,213 US7554031B2 (en) | 2005-03-03 | 2005-08-22 | Preventing harmful polarization of solar cells |
US11/210,213 | 2005-08-22 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800068188A Division CN101133500B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102194911A true CN102194911A (zh) | 2011-09-21 |
CN102194911B CN102194911B (zh) | 2012-12-26 |
Family
ID=36942960
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800068188A Active CN101133500B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
CN201210112491.XA Active CN102683442B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
CN2011101170449A Active CN102194911B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
CN201210443834.0A Active CN102945864B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800068188A Active CN101133500B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
CN201210112491.XA Active CN102683442B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210443834.0A Active CN102945864B (zh) | 2005-03-03 | 2006-01-20 | 防止有害的太阳能电池极化 |
Country Status (6)
Country | Link |
---|---|
US (7) | US7554031B2 (zh) |
EP (1) | EP1854147B1 (zh) |
JP (4) | JP5224444B2 (zh) |
KR (2) | KR100933598B1 (zh) |
CN (4) | CN101133500B (zh) |
WO (1) | WO2006096247A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465889A (zh) * | 2014-12-26 | 2015-03-25 | 浙江正泰太阳能科技有限公司 | 一种晶硅太阳能电池的制备方法 |
Families Citing this family (148)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7554031B2 (en) * | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
KR100982721B1 (ko) * | 2005-09-29 | 2010-09-17 | 마이크로 실리트론 인코포레이티드 | 연료 전지 단위 셀, 연료 전지 단위 셀 어레이, 연료 전지모듈 및 연료 전지 시스템 |
GB2442254A (en) * | 2006-09-29 | 2008-04-02 | Renewable Energy Corp Asa | Back contacted solar cell |
US20080135090A1 (en) * | 2006-12-11 | 2008-06-12 | Sunmodular, Inc. | Solar roof tiles with heat exchange and methods of making thereof |
US20080134497A1 (en) * | 2006-12-11 | 2008-06-12 | Sunmodular, Inc. | Modular solar panels with heat exchange & methods of making thereof |
US7728219B2 (en) * | 2006-12-11 | 2010-06-01 | Sunmodular, Inc. | Photovoltaic cells, modules and methods of making same |
AU2007346834A1 (en) * | 2007-02-08 | 2008-08-21 | Wuxi Suntech-Power Co., Ltd. | Hybrid silicon solar cells and method of fabricating same |
JP5687837B2 (ja) * | 2007-02-16 | 2015-03-25 | ナノグラム・コーポレイションNanoGram Corporation | 太陽電池構造体、光起電モジュール及びこれらに対応する方法 |
US7670638B2 (en) * | 2007-05-17 | 2010-03-02 | Sunpower Corporation | Protection layer for fabricating a solar cell |
US7838062B2 (en) * | 2007-05-29 | 2010-11-23 | Sunpower Corporation | Array of small contacts for solar cell fabrication |
US8294296B2 (en) * | 2007-08-03 | 2012-10-23 | Advanced Energy Industries, Inc. | System, method, and apparatus for remotely coupling photovoltaic arrays |
US20090217964A1 (en) * | 2007-09-26 | 2009-09-03 | Advanced Energy Industries, Inc. | Device, system, and method for improving the efficiency of solar panels |
US20090078304A1 (en) * | 2007-09-26 | 2009-03-26 | Jack Arthur Gilmore | Photovoltaic charge abatement device, system, and method |
US8987039B2 (en) | 2007-10-12 | 2015-03-24 | Air Products And Chemicals, Inc. | Antireflective coatings for photovoltaic applications |
DE102007054384A1 (de) | 2007-11-14 | 2009-05-20 | Institut Für Solarenergieforschung Gmbh | Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle |
US8198528B2 (en) * | 2007-12-14 | 2012-06-12 | Sunpower Corporation | Anti-reflective coating with high optical absorption layer for backside contact solar cells |
KR20090067350A (ko) * | 2007-12-21 | 2009-06-25 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
WO2009098241A1 (en) * | 2008-02-05 | 2009-08-13 | Oerlikon Trading Ag, Trübbach | Encapsulation of optoelectronic devices |
US8440903B1 (en) * | 2008-02-21 | 2013-05-14 | Stion Corporation | Method and structure for forming module using a powder coating and thermal treatment process |
US20090211623A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar module with solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US20090211627A1 (en) * | 2008-02-25 | 2009-08-27 | Suniva, Inc. | Solar cell having crystalline silicon p-n homojunction and amorphous silicon heterojunctions for surface passivation |
US8076175B2 (en) * | 2008-02-25 | 2011-12-13 | Suniva, Inc. | Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation |
US8481357B2 (en) * | 2008-03-08 | 2013-07-09 | Crystal Solar Incorporated | Thin film solar cell with ceramic handling layer |
US20110198304A1 (en) * | 2008-05-01 | 2011-08-18 | Linus Eric Wallgren | Rack Assembly for Solar Energy Collecting Module |
US20090277503A1 (en) * | 2008-05-10 | 2009-11-12 | Solfocus, Inc. | Solar Cell with Current Blocking Layer |
US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
US8049097B2 (en) * | 2008-08-11 | 2011-11-01 | General Electric Company | Solar cell including cooling channels and method for fabrication |
JP2012504350A (ja) * | 2008-09-29 | 2012-02-16 | シンシリコン・コーポレーション | 一体的に統合されたソーラーモジュール |
US20100108130A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin Interdigitated backside contact solar cell and manufacturing process thereof |
US20100108134A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin two sided single crystal solar cell and manufacturing process thereof |
JP5527699B2 (ja) * | 2008-11-12 | 2014-06-18 | 国立大学法人九州工業大学 | 太陽電池アレイ上での持続放電抑制装置 |
JP5123830B2 (ja) * | 2008-11-26 | 2013-01-23 | ルネサスエレクトロニクス株式会社 | 反射防止膜、反射防止膜の製造方法、及び反射防止膜を用いた半導体装置 |
FR2939240B1 (fr) * | 2008-12-03 | 2011-02-18 | Saint Gobain | Element en couches et dispositif photovoltaique comprenant un tel element |
KR101622714B1 (ko) * | 2009-02-11 | 2016-05-19 | 뉴사우스 이노베이션즈 피티와이 리미티드 | 광전 디바이스 구조 및 방법 |
DE102009003467A1 (de) * | 2009-02-11 | 2010-08-19 | Q-Cells Se | Rückseitenkontaktierte Solarzelle |
US8258395B2 (en) | 2009-02-24 | 2012-09-04 | Sunpower Corporation | Photovoltaic module and interlocked stack of photovoltaic modules |
CN101817245B (zh) * | 2009-02-27 | 2013-06-26 | E.I.内穆尔杜邦公司 | 太阳能电池组件 |
JP5377018B2 (ja) * | 2009-03-23 | 2013-12-25 | 株式会社東芝 | 太陽光発電システム |
JP5326041B2 (ja) * | 2009-04-30 | 2013-10-30 | 漢陽大学校産学協力団 | 炭素ナノチューブ層を含むシリコン太陽電池 |
US20100294349A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Back contact solar cells with effective and efficient designs and corresponding patterning processes |
DE202009018068U1 (de) | 2009-06-02 | 2010-12-23 | Solon Se | Solarmodul |
KR101247916B1 (ko) * | 2009-06-10 | 2013-03-26 | 씬실리콘 코포레이션 | 텐덤 반도체 층 스택을 구비한 광전지 모듈 및 광전지 모듈의 제작 방법 |
KR101154727B1 (ko) * | 2009-06-30 | 2012-06-08 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
DE102009031982A1 (de) | 2009-07-06 | 2011-01-13 | Schott Solar Ag | Photovoltaik-Modul und Photovoltaik-Einrichtung |
US8530990B2 (en) | 2009-07-20 | 2013-09-10 | Sunpower Corporation | Optoelectronic device with heat spreader unit |
US9312697B2 (en) | 2009-07-30 | 2016-04-12 | Tigo Energy, Inc. | System and method for addressing solar energy production capacity loss due to field buildup between cells and glass and frame assembly |
WO2011017659A1 (en) * | 2009-08-06 | 2011-02-10 | Energy Focus, Inc. | Method of passivating and reducing reflectance of a photovoltaic cell |
US8188363B2 (en) * | 2009-08-07 | 2012-05-29 | Sunpower Corporation | Module level solutions to solar cell polarization |
US20110041910A1 (en) * | 2009-08-18 | 2011-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
CN102484372B (zh) * | 2009-08-24 | 2014-06-18 | 三菱电机株式会社 | 太阳能发电用功率调节器 |
US20110048505A1 (en) * | 2009-08-27 | 2011-03-03 | Gabriela Bunea | Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve |
US8525018B2 (en) * | 2009-09-07 | 2013-09-03 | Lg Electronics Inc. | Solar cell |
EP2293350A3 (en) | 2009-09-07 | 2013-06-12 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
US20110056532A1 (en) * | 2009-09-09 | 2011-03-10 | Crystal Solar, Inc. | Method for manufacturing thin crystalline solar cells pre-assembled on a panel |
DE102009044052A1 (de) * | 2009-09-18 | 2011-03-24 | Schott Solar Ag | Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls |
DE102009044142A1 (de) | 2009-09-30 | 2011-03-31 | Saint-Gobain Sekurit Deutschland Gmbh & Co. Kg | Dünnschicht-Bauelement auf Glas, ein Verfahren zu dessen Herstellung und dessen Verwendung |
US9166071B2 (en) * | 2009-10-27 | 2015-10-20 | Silicor Materials Inc. | Polarization resistant solar cell design using an oxygen-rich interface layer |
US8304644B2 (en) | 2009-11-20 | 2012-11-06 | Sunpower Corporation | Device and method for solar power generation |
US8008208B2 (en) | 2009-12-07 | 2011-08-30 | Applied Materials, Inc. | Method of cleaning and forming a negatively charged passivation layer over a doped region |
US8809671B2 (en) * | 2009-12-08 | 2014-08-19 | Sunpower Corporation | Optoelectronic device with bypass diode |
FR2955702B1 (fr) * | 2010-01-27 | 2012-01-27 | Commissariat Energie Atomique | Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation |
JP5215330B2 (ja) * | 2010-02-01 | 2013-06-19 | シャープ株式会社 | 裏面電極型太陽電池の製造方法、裏面電極型太陽電池および裏面電極型太陽電池モジュール |
US9214583B2 (en) * | 2010-03-19 | 2015-12-15 | Hirak Mitra | Method to build transparent polarizing solar cell |
US9202960B2 (en) * | 2010-03-30 | 2015-12-01 | Sunpower Corporation | Leakage pathway layer for solar cell |
DE112011101134T5 (de) * | 2010-03-30 | 2013-01-10 | Applied Materials, Inc. | Verfahren zum Bilden einer negativ geladenen Passivierungsschicht über einem verteilten p-dotierten Bereich |
JP5213188B2 (ja) * | 2010-04-27 | 2013-06-19 | シャープ株式会社 | 裏面電極型太陽電池、および裏面電極型太陽電池の製造方法 |
US8211731B2 (en) | 2010-06-07 | 2012-07-03 | Sunpower Corporation | Ablation of film stacks in solar cell fabrication processes |
DE102010023262A1 (de) * | 2010-06-09 | 2011-12-15 | Danfoss Solar Inverters A/S | Solarkraftwerk mit erhöhter Lebensdauer |
DE102010017461B4 (de) * | 2010-06-18 | 2013-11-14 | Hanwha Q.CELLS GmbH | Solarzelle, Solarzellenherstellungsverfahren und Prüfverfahren |
US9911882B2 (en) | 2010-06-24 | 2018-03-06 | Sunpower Corporation | Passive flow accelerator |
US8377738B2 (en) | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
US8263899B2 (en) | 2010-07-01 | 2012-09-11 | Sunpower Corporation | High throughput solar cell ablation system |
US8604404B1 (en) | 2010-07-01 | 2013-12-10 | Sunpower Corporation | Thermal tracking for solar systems |
US9897346B2 (en) | 2010-08-03 | 2018-02-20 | Sunpower Corporation | Opposing row linear concentrator architecture |
US8563849B2 (en) | 2010-08-03 | 2013-10-22 | Sunpower Corporation | Diode and heat spreader for solar module |
US8336539B2 (en) | 2010-08-03 | 2012-12-25 | Sunpower Corporation | Opposing row linear concentrator architecture |
US20120048372A1 (en) * | 2010-08-25 | 2012-03-01 | Hyungseok Kim | Solar cell |
KR101275575B1 (ko) * | 2010-10-11 | 2013-06-14 | 엘지전자 주식회사 | 후면전극형 태양전지 및 이의 제조 방법 |
DE102010060463B4 (de) * | 2010-11-09 | 2013-04-25 | Sma Solar Technology Ag | Schaltungsanordnung zur Potentialeinstellung eines Photovoltaikgenerators und Photovoltaikanlage |
US9337361B2 (en) * | 2010-11-26 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and manufacturing method thereof |
US9246037B2 (en) | 2010-12-03 | 2016-01-26 | Sunpower Corporation | Folded fin heat sink |
JP5723143B2 (ja) * | 2010-12-06 | 2015-05-27 | シャープ株式会社 | 裏面電極型太陽電池の製造方法、および裏面電極型太陽電池 |
US8839784B2 (en) | 2010-12-22 | 2014-09-23 | Sunpower Corporation | Locating connectors and methods for mounting solar hardware |
US8893713B2 (en) | 2010-12-22 | 2014-11-25 | Sunpower Corporation | Locating connectors and methods for mounting solar hardware |
US8912083B2 (en) | 2011-01-31 | 2014-12-16 | Nanogram Corporation | Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes |
US8586403B2 (en) * | 2011-02-15 | 2013-11-19 | Sunpower Corporation | Process and structures for fabrication of solar cells with laser ablation steps to form contact holes |
KR20120095790A (ko) * | 2011-02-21 | 2012-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 광전 변환 장치 |
JP2012182275A (ja) * | 2011-03-01 | 2012-09-20 | Sharp Corp | 太陽電池、および太陽電池の製造方法 |
US8726897B2 (en) | 2011-03-15 | 2014-05-20 | Sunedison, Llc | Collapsible solar module support system and method for assembling the same |
US20120266943A1 (en) | 2011-04-20 | 2012-10-25 | Bo Li | Solar cell module structure and fabrication method for preventing polarization |
US8872018B1 (en) * | 2011-05-06 | 2014-10-28 | The Boeing Company | Atomic oxygen and electrostatic-resistant, flexible structure for space applications |
US20120289036A1 (en) * | 2011-05-11 | 2012-11-15 | Applied Materials, Inc. | Surface dose retention of dopants by pre-amorphization and post implant passivation treatments |
US9748414B2 (en) | 2011-05-20 | 2017-08-29 | Arthur R. Zingher | Self-activated front surface bias for a solar cell |
US9038421B2 (en) | 2011-07-01 | 2015-05-26 | Sunpower Corporation | Glass-bending apparatus and method |
US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
DE102011081863A1 (de) | 2011-08-31 | 2013-02-28 | Robert Bosch Gmbh | Solarzelle und Verfahren zu deren Herstellung |
DE102011082445A1 (de) * | 2011-09-09 | 2013-03-14 | Robert Bosch Gmbh | Solarmodul und Photovoltaikanlage |
US8796535B2 (en) * | 2011-09-30 | 2014-08-05 | Sunpower Corporation | Thermal tracking for solar systems |
US8889981B2 (en) * | 2011-10-18 | 2014-11-18 | Samsung Sdi Co., Ltd. | Photoelectric device |
DE102011055148A1 (de) * | 2011-11-08 | 2013-05-08 | Hanwha Q.CELLS GmbH | Solarmodul und Verfahren zu dessen Herstellung |
JP2013115262A (ja) * | 2011-11-29 | 2013-06-10 | Sharp Corp | 光電変換素子 |
US9035168B2 (en) | 2011-12-21 | 2015-05-19 | Sunpower Corporation | Support for solar energy collectors |
US8822262B2 (en) | 2011-12-22 | 2014-09-02 | Sunpower Corporation | Fabricating solar cells with silicon nanoparticles |
US8528366B2 (en) | 2011-12-22 | 2013-09-10 | Sunpower Corporation | Heat-regulating glass bending apparatus and method |
US8513045B1 (en) | 2012-01-31 | 2013-08-20 | Sunpower Corporation | Laser system with multiple laser pulses for fabrication of solar cells |
CN202549936U (zh) * | 2012-02-10 | 2012-11-21 | 深圳市神达太阳能科技有限公司 | 一种可弯曲高效太阳能电池板 |
DE102012101340B4 (de) | 2012-02-20 | 2015-11-19 | Sma Solar Technology Ag | Schutz von Photovoltaikmodulen eines Photovoltaikgenerators vor Überspannungen gegenüber Erde |
DE102012101456A1 (de) | 2012-02-23 | 2013-08-29 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
DE102012204269A1 (de) | 2012-03-19 | 2013-09-19 | Robert Bosch Gmbh | Solarmodul |
US9397611B2 (en) | 2012-03-27 | 2016-07-19 | Sunpower Corporation | Photovoltaic systems with local maximum power point tracking prevention and methods for operating same |
JP5865490B2 (ja) * | 2012-04-18 | 2016-02-17 | 株式会社日立製作所 | 太陽電池およびその製造方法 |
TWI477046B (zh) * | 2012-09-26 | 2015-03-11 | Univ Nat Kaohsiung Applied Sci | 太陽能電池陣列正電位端接地之市電併聯型太陽能發電系統 |
US8636198B1 (en) | 2012-09-28 | 2014-01-28 | Sunpower Corporation | Methods and structures for forming and improving solder joint thickness and planarity control features for solar cells |
US9812590B2 (en) | 2012-10-25 | 2017-11-07 | Sunpower Corporation | Bifacial solar cell module with backside reflector |
US20140124014A1 (en) * | 2012-11-08 | 2014-05-08 | Cogenra Solar, Inc. | High efficiency configuration for solar cell string |
US9035172B2 (en) | 2012-11-26 | 2015-05-19 | Sunpower Corporation | Crack resistant solar cell modules |
JP2014107400A (ja) * | 2012-11-27 | 2014-06-09 | Sharp Corp | 太陽電池パネルおよび太陽電池アレイ |
US8796061B2 (en) | 2012-12-21 | 2014-08-05 | Sunpower Corporation | Module assembly for thin solar cells |
US9812592B2 (en) * | 2012-12-21 | 2017-11-07 | Sunpower Corporation | Metal-foil-assisted fabrication of thin-silicon solar cell |
TWI626757B (zh) * | 2013-07-09 | 2018-06-11 | 英穩達科技股份有限公司 | 背面接觸型太陽能電池 |
CN103441166B (zh) * | 2013-07-10 | 2015-09-09 | 友达光电股份有限公司 | 太阳能电池模块 |
US9685571B2 (en) * | 2013-08-14 | 2017-06-20 | Sunpower Corporation | Solar cell module with high electric susceptibility layer |
US20150280043A1 (en) * | 2014-03-27 | 2015-10-01 | David D. Smith | Solar cell with trench-free emitter regions |
US11811360B2 (en) * | 2014-03-28 | 2023-11-07 | Maxeon Solar Pte. Ltd. | High voltage solar modules |
WO2015171575A1 (en) | 2014-05-09 | 2015-11-12 | E. I. Du Pont De Nemours And Company | Encapsulant composition comprising a copolymer of ethylene, vinyl acetate and a third comonomer |
JP6548896B2 (ja) | 2014-12-26 | 2019-07-24 | 株式会社マテリアル・コンセプト | 太陽電池モジュールおよびその製造方法 |
US11056997B2 (en) * | 2015-06-27 | 2021-07-06 | Sunpower Corporation | Universal photovoltaic laminate |
ES2926948T3 (es) * | 2015-07-27 | 2022-10-31 | Sierra Space Corp | Sistema de matriz solar y método de fabricación |
USD822890S1 (en) | 2016-09-07 | 2018-07-10 | Felxtronics Ap, Llc | Lighting apparatus |
US10775030B2 (en) | 2017-05-05 | 2020-09-15 | Flex Ltd. | Light fixture device including rotatable light modules |
USD846793S1 (en) | 2017-08-09 | 2019-04-23 | Flex Ltd. | Lighting module locking mechanism |
USD877964S1 (en) | 2017-08-09 | 2020-03-10 | Flex Ltd. | Lighting module |
USD872319S1 (en) | 2017-08-09 | 2020-01-07 | Flex Ltd. | Lighting module LED light board |
USD833061S1 (en) | 2017-08-09 | 2018-11-06 | Flex Ltd. | Lighting module locking endcap |
USD862777S1 (en) | 2017-08-09 | 2019-10-08 | Flex Ltd. | Lighting module wide distribution lens |
USD832494S1 (en) | 2017-08-09 | 2018-10-30 | Flex Ltd. | Lighting module heatsink |
USD832495S1 (en) | 2017-08-18 | 2018-10-30 | Flex Ltd. | Lighting module locking mechanism |
USD862778S1 (en) | 2017-08-22 | 2019-10-08 | Flex Ltd | Lighting module lens |
USD888323S1 (en) | 2017-09-07 | 2020-06-23 | Flex Ltd | Lighting module wire guard |
US20210115239A1 (en) | 2018-03-08 | 2021-04-22 | Performance Materials Na, Inc. | Photovoltaic module and encapsulant composition having improved resistance to potential induced degradation |
JP6935353B2 (ja) * | 2018-03-26 | 2021-09-15 | シャープ株式会社 | 電力制御装置、太陽光発電システム、およびプログラム |
CN108649099B (zh) | 2018-04-27 | 2020-04-28 | 华为技术有限公司 | 基于光伏组件的退化现象处理方法以及相关设备 |
DE102018222585A1 (de) | 2018-12-20 | 2020-06-25 | Forschungszentrum Jülich GmbH | Verfahren und Vorrichtung zur Reduktion der Potenzial induzierten Degradation von Solarzellen |
CN112259614B (zh) * | 2019-07-03 | 2022-09-23 | 中国科学院宁波材料技术与工程研究所 | 一种叠层薄膜钝化接触结构的制备方法及其应用 |
KR102247520B1 (ko) * | 2019-09-25 | 2021-05-03 | 주식회사 호진플라텍 | 슁글드 태양전지 모듈용 앤드 리본, 그 제조 방법 및 이에 사용되는 프레스 금형 |
CN111463319B (zh) * | 2020-04-09 | 2021-12-17 | 无锡优顺能源开发科技有限公司 | 一种硅太阳能电池片及其制作方法 |
JP2021013044A (ja) * | 2020-11-06 | 2021-02-04 | シャープ株式会社 | 光電変換素子 |
FR3118530B1 (fr) * | 2020-12-29 | 2023-10-13 | Commissariat Energie Atomique | Module photovoltaïque avec electrode de mise au potentielpour centrale photovoltaïque |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5195858A (en) * | 1975-01-14 | 1976-08-23 | ****** *** *ku***chi*se*ku*******ka*****************chi***ne******** | |
US4084099A (en) * | 1977-02-04 | 1978-04-11 | Pako Corporation | Wide scanning angle sensor |
US4253881A (en) * | 1978-10-23 | 1981-03-03 | Rudolf Hezel | Solar cells composed of semiconductive materials |
US4278831A (en) * | 1979-04-27 | 1981-07-14 | The Boeing Company | Process for fabricating solar cells and the product produced thereby |
US4400868A (en) * | 1980-12-29 | 1983-08-30 | Varian Associates, Inc. | Method of making a transparent and electrically conductive bond |
JPS57183074A (en) * | 1981-05-01 | 1982-11-11 | Kyocera Corp | Solar battery module |
US4496788A (en) * | 1982-12-29 | 1985-01-29 | Osaka Transformer Co., Ltd. | Photovoltaic device |
DE3713957A1 (de) * | 1987-04-25 | 1988-11-03 | Semikron Elektronik Gmbh | Solarzelle |
US4838952A (en) * | 1988-04-29 | 1989-06-13 | Spectrolab, Inc. | Controlled reflectance solar cell |
US5011782A (en) * | 1989-03-31 | 1991-04-30 | Electric Power Research Institute | Method of making passivated antireflective coating for photovoltaic cell |
JPH02297976A (ja) * | 1989-05-12 | 1990-12-10 | Toshiba Corp | 太陽電池モジュール |
JP2740284B2 (ja) * | 1989-08-09 | 1998-04-15 | 三洋電機株式会社 | 光起電力素子 |
US5030295A (en) * | 1990-02-12 | 1991-07-09 | Electric Power Research Institut | Radiation resistant passivation of silicon solar cells |
US5057439A (en) * | 1990-02-12 | 1991-10-15 | Electric Power Research Institute | Method of fabricating polysilicon emitters for solar cells |
US5213628A (en) * | 1990-09-20 | 1993-05-25 | Sanyo Electric Co., Ltd. | Photovoltaic device |
JP2931451B2 (ja) * | 1991-09-19 | 1999-08-09 | 京セラ株式会社 | 太陽電池素子 |
JPH05284654A (ja) * | 1992-03-30 | 1993-10-29 | Mitsubishi Electric Corp | 太陽光発電装置 |
JP3195424B2 (ja) * | 1992-06-25 | 2001-08-06 | シャープ株式会社 | 太陽電池およびその製造方法 |
US5468652A (en) * | 1993-07-14 | 1995-11-21 | Sandia Corporation | Method of making a back contacted solar cell |
JP3222361B2 (ja) * | 1995-08-15 | 2001-10-29 | キヤノン株式会社 | 太陽電池モジュールの製造方法及び太陽電池モジュール |
US5641362A (en) * | 1995-11-22 | 1997-06-24 | Ebara Solar, Inc. | Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell |
JPH10173210A (ja) * | 1996-12-13 | 1998-06-26 | Canon Inc | 電極、その形成方法及び該電極を有する光起電力素子 |
CH691010A5 (fr) * | 1997-01-09 | 2001-03-30 | Asulab Sa | Appareil électrique fonctionnant à l'aide d'une source photovoltaïque, notamment pièce d'horlogerie. |
AUPO638997A0 (en) * | 1997-04-23 | 1997-05-22 | Unisearch Limited | Metal contact scheme using selective silicon growth |
EP0881694A1 (en) * | 1997-05-30 | 1998-12-02 | Interuniversitair Micro-Elektronica Centrum Vzw | Solar cell and process of manufacturing the same |
CN1155109C (zh) * | 1997-08-27 | 2004-06-23 | 中田仗祐 | 球状半导体器件及其制造方法 |
US6013582A (en) * | 1997-12-08 | 2000-01-11 | Applied Materials, Inc. | Method for etching silicon oxynitride and inorganic antireflection coatings |
DE19802325A1 (de) | 1998-01-23 | 1999-08-05 | Dornier Gmbh | Elektrostatische Ableitung für Solarzellen |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
US6111189A (en) * | 1998-07-28 | 2000-08-29 | Bp Solarex | Photovoltaic module framing system with integral electrical raceways |
JP2000100490A (ja) * | 1998-09-24 | 2000-04-07 | Matsushita Electric Works Ltd | 太陽電池モジュールの接地構造 |
JP3781600B2 (ja) * | 2000-01-18 | 2006-05-31 | シャープ株式会社 | 太陽電池 |
JP2001267610A (ja) * | 2000-03-17 | 2001-09-28 | Hitachi Ltd | 太陽電池 |
JP2002057352A (ja) * | 2000-06-02 | 2002-02-22 | Honda Motor Co Ltd | 太陽電池およびその製造方法 |
JP2002359386A (ja) | 2001-05-31 | 2002-12-13 | Canon Inc | 太陽電池ストリング、太陽電池アレイ及び太陽光発電システム |
JP2003158282A (ja) * | 2001-08-30 | 2003-05-30 | Canon Inc | 太陽光発電システム |
US20030070707A1 (en) * | 2001-10-12 | 2003-04-17 | King Richard Roland | Wide-bandgap, lattice-mismatched window layer for a solar energy conversion device |
US6672018B2 (en) * | 2001-10-12 | 2004-01-06 | Jefferson Shingleton | Solar module mounting method and clip |
JP2004071763A (ja) * | 2002-08-05 | 2004-03-04 | Toyota Motor Corp | 光起電力素子 |
WO2004038462A1 (en) * | 2002-10-22 | 2004-05-06 | Sunray Technologies, Inc. | Diffractive structures for the redirection and concentration of optical radiation |
JP4391079B2 (ja) | 2002-11-28 | 2009-12-24 | 浜松ホトニクス株式会社 | 固体撮像装置及び放射線撮像装置 |
US7554031B2 (en) | 2005-03-03 | 2009-06-30 | Sunpower Corporation | Preventing harmful polarization of solar cells |
CN102460715B (zh) * | 2009-04-21 | 2015-07-22 | 泰特拉桑有限公司 | 高效率太阳能电池结构及制造方法 |
-
2005
- 2005-08-22 US US11/210,213 patent/US7554031B2/en active Active
-
2006
- 2006-01-20 EP EP06719101.5A patent/EP1854147B1/en active Active
- 2006-01-20 CN CN2006800068188A patent/CN101133500B/zh active Active
- 2006-01-20 KR KR1020077019044A patent/KR100933598B1/ko active IP Right Grant
- 2006-01-20 JP JP2007558005A patent/JP5224444B2/ja active Active
- 2006-01-20 CN CN201210112491.XA patent/CN102683442B/zh active Active
- 2006-01-20 KR KR1020097007569A patent/KR101080583B1/ko active IP Right Grant
- 2006-01-20 WO PCT/US2006/002137 patent/WO2006096247A2/en active Application Filing
- 2006-01-20 CN CN2011101170449A patent/CN102194911B/zh active Active
- 2006-01-20 CN CN201210443834.0A patent/CN102945864B/zh active Active
-
2009
- 2009-06-03 US US12/477,796 patent/US7786375B2/en active Active
-
2010
- 2010-07-28 US US12/845,627 patent/US9035167B2/en active Active
- 2010-12-27 JP JP2010291035A patent/JP5570411B2/ja active Active
-
2011
- 2011-11-07 JP JP2011243477A patent/JP5439459B2/ja active Active
-
2014
- 2014-03-28 JP JP2014069285A patent/JP5806358B2/ja active Active
-
2015
- 2015-04-15 US US14/687,624 patent/US20150288328A1/en not_active Abandoned
-
2016
- 2016-08-05 US US15/230,182 patent/US10164567B2/en active Active
- 2016-08-18 US US15/240,913 patent/US9774294B2/en active Active
-
2018
- 2018-11-20 US US16/196,340 patent/US10903786B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104465889A (zh) * | 2014-12-26 | 2015-03-25 | 浙江正泰太阳能科技有限公司 | 一种晶硅太阳能电池的制备方法 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101133500B (zh) | 防止有害的太阳能电池极化 | |
US8188363B2 (en) | Module level solutions to solar cell polarization | |
US8859880B2 (en) | Method and structure for tiling industrial thin-film solar devices | |
US8278549B2 (en) | TCO-based hybrid solar photovoltaic energy conversion apparatus | |
EP3033772B1 (en) | Solar cell module with high electric susceptibility layer | |
US20100101627A1 (en) | Flexible solar panel module | |
AU2012245768A1 (en) | Solar cell module structure and fabrication method for preventing polarization | |
EP3439047A1 (en) | Back contact solar cell, solar cell module and solar photovoltaic power generation system | |
ibne Mahmood | Potential Induced Degradation (PID) of Photovoltaic Modules: Influence of Superstrate, Encapsulant and Substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220823 Address after: Singapore, Singapore City Patentee after: Maikesheng solar energy Co.,Ltd. Address before: California, USA Patentee before: SUNPOWER Corp. |
|
TR01 | Transfer of patent right |