CN102184930B - 固态成像装置和相机 - Google Patents

固态成像装置和相机 Download PDF

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Publication number
CN102184930B
CN102184930B CN201110090935.XA CN201110090935A CN102184930B CN 102184930 B CN102184930 B CN 102184930B CN 201110090935 A CN201110090935 A CN 201110090935A CN 102184930 B CN102184930 B CN 102184930B
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substrate
pixel
image pickup
solid state
state image
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Chinese (zh)
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CN102184930A (zh
Inventor
广田功
原田耕一
唐泽信浩
丸山康
新田嘉一
寺笼博裕
高岛大
野村秀雄
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201110090935.XA 2007-12-18 2008-12-18 固态成像装置和相机 Expired - Fee Related CN102184930B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-326175 2007-12-18
JP2007326175A JP5167799B2 (ja) 2007-12-18 2007-12-18 固体撮像装置およびカメラ

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CN2008101835900A Division CN101465364B (zh) 2007-12-18 2008-12-18 固态成像装置和相机

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CN102184930A CN102184930A (zh) 2011-09-14
CN102184930B true CN102184930B (zh) 2014-02-26

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CN2008101835900A Expired - Fee Related CN101465364B (zh) 2007-12-18 2008-12-18 固态成像装置和相机

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Country Status (6)

Country Link
US (2) US8106983B2 (https=)
EP (1) EP2073270B1 (https=)
JP (1) JP5167799B2 (https=)
KR (1) KR101534117B1 (https=)
CN (2) CN102184930B (https=)
TW (1) TWI416949B (https=)

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CN109844952B (zh) * 2017-01-19 2021-07-20 索尼半导体解决方案公司 光接收元件、成像元件和成像装置

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US20090153708A1 (en) 2009-06-18
US8687101B2 (en) 2014-04-01
TW200943938A (en) 2009-10-16
JP5167799B2 (ja) 2013-03-21
US8106983B2 (en) 2012-01-31
TWI416949B (zh) 2013-11-21
EP2073270A2 (en) 2009-06-24
CN101465364B (zh) 2011-06-08
JP2009152234A (ja) 2009-07-09
CN102184930A (zh) 2011-09-14
KR101534117B1 (ko) 2015-07-06
KR20090066227A (ko) 2009-06-23
EP2073270A3 (en) 2012-05-16
CN101465364A (zh) 2009-06-24
EP2073270B1 (en) 2014-03-19
US20120113292A1 (en) 2012-05-10

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