CN102165564B - 用于化学机械抛光的磨料组合物及其使用方法 - Google Patents

用于化学机械抛光的磨料组合物及其使用方法 Download PDF

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Publication number
CN102165564B
CN102165564B CN200980138129.6A CN200980138129A CN102165564B CN 102165564 B CN102165564 B CN 102165564B CN 200980138129 A CN200980138129 A CN 200980138129A CN 102165564 B CN102165564 B CN 102165564B
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China
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block
dispersion
moiety
ceria
polymer
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Expired - Fee Related
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CN200980138129.6A
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English (en)
Chinese (zh)
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CN102165564A (zh
Inventor
苏里亚德瓦拉·V·巴比
普拉迪帕·丹杜
万西·K·德瓦拉帕里
纪尧姆·克里内尔
克拉里·皮图瓦
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Rhodia Operations SAS
Clarkson University
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Rhodia Operations SAS
Clarkson University
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN200980138129.6A 2008-09-26 2009-09-25 用于化学机械抛光的磨料组合物及其使用方法 Expired - Fee Related CN102165564B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19449708P 2008-09-26 2008-09-26
US61/194,497 2008-09-26
PCT/US2009/005325 WO2010036358A1 (en) 2008-09-26 2009-09-25 Abrasive compositions for chemical mechanical polishing and methods for using same

Publications (2)

Publication Number Publication Date
CN102165564A CN102165564A (zh) 2011-08-24
CN102165564B true CN102165564B (zh) 2014-10-01

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Country Status (7)

Country Link
US (2) US8366959B2 (enExample)
EP (1) EP2329519B1 (enExample)
JP (1) JP5632378B2 (enExample)
KR (1) KR101678114B1 (enExample)
CN (1) CN102165564B (enExample)
TW (1) TW201038690A (enExample)
WO (1) WO2010036358A1 (enExample)

Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2923487B1 (fr) * 2007-11-09 2009-12-04 Rhodia Operations Copolymere ampholyte a architecture controlee
JP5819589B2 (ja) * 2010-03-10 2015-11-24 株式会社フジミインコーポレーテッド 研磨用組成物を用いた方法
SG188460A1 (en) * 2010-09-08 2013-04-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
US8513126B2 (en) * 2010-09-22 2013-08-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Slurry composition having tunable dielectric polishing selectivity and method of polishing a substrate
KR20130140764A (ko) * 2010-11-08 2013-12-24 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 이를 이용한 반도체 기판의 연마 방법
US20120190200A1 (en) * 2011-01-24 2012-07-26 Clarkson University Abrasive Free Silicon Chemical Mechanical Planarization
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
EP2794790B1 (en) * 2011-12-21 2018-02-21 Basf Se Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
US9346978B2 (en) * 2012-05-22 2016-05-24 Hitachi Chemical Company, Ltd. Slurry, polishing-solution set, polishing solution, substrate polishing method, and substrate
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US9505950B2 (en) 2012-08-31 2016-11-29 Fujimi Incorporated Polishing composition and method for producing substrate
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US11026765B2 (en) 2013-07-10 2021-06-08 H2O Tech, Inc. Stabilized, water-jet slurry apparatus and method
EP2826827B1 (en) * 2013-07-18 2019-06-12 Basf Se CMP composition comprising abrasive particles containing ceria
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US10131819B2 (en) * 2013-08-30 2018-11-20 Hitachi Chemical Company, Ltd Slurry, polishing solution set, polishing solution, and substrate polishing method
KR102239131B1 (ko) 2013-09-30 2021-04-12 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물 및 그 제조 방법
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
KR102367577B1 (ko) * 2013-12-16 2022-02-25 로디아 오퍼레이션스 세륨 옥사이드 입자의 액체 현탁액
US9303188B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
WO2015137982A1 (en) * 2014-03-14 2015-09-17 Cabot Microelectronics Corporation Composition and method for polishing glass
US9309442B2 (en) 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
KR102659674B1 (ko) * 2014-05-30 2024-04-19 가부시끼가이샤 레조낙 Cmp용 연마액, cmp용 연마액 세트 및 연마 방법
CN106471090A (zh) 2014-07-09 2017-03-01 日立化成株式会社 Cmp用研磨液和研磨方法
KR102485534B1 (ko) * 2014-08-11 2023-01-06 바스프 에스이 유기/무기 복합체 입자를 포함하는 화학적 기계적 연마 조성물
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
WO2016060712A1 (en) 2014-10-17 2016-04-21 Applied Materials, Inc. Cmp pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US9776361B2 (en) 2014-10-17 2017-10-03 Applied Materials, Inc. Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
JP6572299B2 (ja) * 2015-02-19 2019-09-04 株式会社フジミインコーポレーテッド シリコンウェーハ研磨用組成物および研磨方法
KR101732421B1 (ko) * 2015-03-13 2017-05-08 주식회사 케이씨텍 연마입자 및 그를 포함하는 연마 슬러리 조성물
JP6628023B2 (ja) * 2015-07-01 2020-01-08 東亞合成株式会社 研磨液組成物用水溶性重合体の製造方法
SG11201801790UA (en) * 2015-09-09 2018-04-27 Hitachi Chemical Co Ltd Polishing liquid, polishing liquid set, and substrate polishing method
US10618141B2 (en) 2015-10-30 2020-04-14 Applied Materials, Inc. Apparatus for forming a polishing article that has a desired zeta potential
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
KR20240015161A (ko) 2016-01-19 2024-02-02 어플라이드 머티어리얼스, 인코포레이티드 다공성 화학적 기계적 연마 패드들
JP2017228576A (ja) * 2016-06-20 2017-12-28 日立化成株式会社 研磨液及び研磨方法
WO2017223225A1 (en) 2016-06-22 2017-12-28 Cabot Microelectronics Corporation Polishing composition comprising an amine-containing surfactant
KR101823083B1 (ko) * 2016-09-07 2018-01-30 주식회사 케이씨텍 표면개질된 콜로이달 세리아 연마입자, 그의 제조방법 및 그를 포함하는 연마 슬러리 조성물
KR102268320B1 (ko) * 2016-11-14 2021-06-22 니끼 쇼꾸바이 카세이 가부시키가이샤 세리아계 복합미립자 분산액, 그의 제조방법 및 세리아계 복합미립자 분산액을 포함하는 연마용 지립분산액
US10221336B2 (en) 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
WO2019032286A1 (en) 2017-08-07 2019-02-14 Applied Materials, Inc. ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME
CN109422262B (zh) * 2017-08-28 2023-04-21 深圳先进技术研究院 一种超分散纳米金刚石分散液及其制备方法和应用
US10316218B2 (en) 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
JP7187770B2 (ja) * 2017-11-08 2022-12-13 Ａｇｃ株式会社 研磨剤と研磨方法、および研磨用添加液
US11161751B2 (en) * 2017-11-15 2021-11-02 Saint-Gobain Ceramics & Plastics, Inc. Composition for conducting material removal operations and method for forming same
JP6837958B2 (ja) 2017-12-28 2021-03-03 花王株式会社 酸化珪素膜用研磨液組成物
WO2020021680A1 (ja) * 2018-07-26 2020-01-30 日立化成株式会社 スラリ及び研磨方法
WO2019187977A1 (ja) * 2018-03-27 2019-10-03 富士フイルム株式会社 研磨液、化学的機械的研磨方法
WO2019193693A1 (ja) * 2018-04-04 2019-10-10 日立化成株式会社 研磨液及び研磨方法
JP7373503B2 (ja) 2018-05-07 2023-11-02 アプライド マテリアルズ インコーポレイテッド 親水性及びゼータ電位の調節可能な化学機械研磨パッド
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
US12247140B2 (en) 2018-09-25 2025-03-11 Resonac Corporation Slurry and polishing method
KR20200058200A (ko) * 2018-11-19 2020-05-27 솔브레인 주식회사 Uva 영역에서 빛을 흡수하는 자외선 차단제 조성물 및 이의 제조방법
KR102679491B1 (ko) * 2018-12-03 2024-07-01 솔브레인 주식회사 연마 첨가제 조성물, 연마 슬러리 조성물 및 반도체 소자의 절연막의 연마 방법
US10787592B1 (en) * 2019-05-16 2020-09-29 Rohm And Haas Electronic Materials Cmp Holdings, I Chemical mechanical polishing compositions and methods having enhanced defect inhibition and selectively polishing silicon nitride over silicon dioxide in an acid environment
JP2022553347A (ja) 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 酸化ケイ素に比べて窒化ケイ素およびポリシリコンについて高い選択性を有する研磨組成物および方法
KR102282872B1 (ko) * 2019-11-11 2021-07-28 주식회사 켐톤 세륨 산화물 입자의 제조방법, 연마입자 및 이를 포함하는 연마용 슬러리 조성물
JP7678468B2 (ja) * 2019-11-12 2025-05-16 国立研究開発法人産業技術総合研究所 高分子複合体及びその製造方法
US12091581B2 (en) 2019-12-04 2024-09-17 Versum Materials Us, Llc High oxide film removal rate shallow trench (STI) chemical mechanical planarization (CMP) polishing
US11813712B2 (en) 2019-12-20 2023-11-14 Applied Materials, Inc. Polishing pads having selectively arranged porosity
KR102827839B1 (ko) * 2019-12-27 2025-06-30 도아고세이가부시키가이샤 분산제 및 연마제 조성물 (dispersant and polishing agent composition)
US11806829B2 (en) 2020-06-19 2023-11-07 Applied Materials, Inc. Advanced polishing pads and related polishing pad manufacturing methods
TWI922376B (zh) * 2020-08-31 2026-04-11 南韓商秀博瑞殷股份有限公司 氧化鈰粒子、其製造方法、包含其的化學機械研磨用漿料組合物以及半導體器件的製造方法
JP7890813B2 (ja) * 2020-11-27 2026-07-15 花王株式会社 酸化珪素膜用研磨液組成物
WO2022113775A1 (ja) * 2020-11-27 2022-06-02 花王株式会社 酸化珪素膜用研磨液組成物
US11878389B2 (en) 2021-02-10 2024-01-23 Applied Materials, Inc. Structures formed using an additive manufacturing process for regenerating surface texture in situ
CN116981752A (zh) * 2021-03-12 2023-10-31 罗地亚经营管理公司 氧化铈粒子、其制造方法及其在化学机械研磨中的用途
KR102946618B1 (ko) 2021-12-22 2026-04-01 삼성전자주식회사 화학적 기계적 연마 장치 및 이를 이용한 화학적 기계적 연마 방법
US20230242790A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon
CN122037795A (zh) * 2026-02-10 2026-05-15 东莞领航电子新材料有限公司 一种抛光组合物及抛光方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20050176863A1 (en) * 2004-01-30 2005-08-11 Kazuhiko Yokota Rare earth aggregate formulation using di-block copolmers
CN1727431A (zh) * 2004-07-28 2006-02-01 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光二氧化硅和氮化硅的组合物和方法
US20060108326A1 (en) * 2004-11-05 2006-05-25 Cabot Microelectronics Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW274625B (enExample) * 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
WO1998001478A1 (en) 1996-07-10 1998-01-15 E.I. Du Pont De Nemours And Company Polymerization with living characteristics
FR2764892B1 (fr) 1997-06-23 2000-03-03 Rhodia Chimie Sa Procede de synthese de polymeres a blocs
JP2000109810A (ja) * 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
KR100557600B1 (ko) * 2001-06-29 2006-03-10 주식회사 하이닉스반도체 나이트라이드 cmp용 슬러리
JP4005562B2 (ja) * 2001-12-12 2007-11-07 ロディア・シミ イオン化合物、ポリイオン重合体及び共重合体を含む処方物
TWI256971B (en) * 2002-08-09 2006-06-21 Hitachi Chemical Co Ltd CMP abrasive and method for polishing substrate
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
DE10260270A1 (de) * 2002-12-20 2004-07-01 Bayer Ag Hydrophile Polyurethan-Polyharnstoff-Dispersion
KR100627510B1 (ko) * 2002-12-30 2006-09-22 주식회사 하이닉스반도체 나이트라이드용 ｃｍｐ 슬러리
JP2005158867A (ja) * 2003-11-21 2005-06-16 Jsr Corp 化学機械研磨用水系分散体を調製するためのセット
EP1566420A1 (en) * 2004-01-23 2005-08-24 JSR Corporation Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
EP1796152B1 (en) * 2004-07-23 2019-02-27 Hitachi Chemical Company, Ltd. Cmp polishing agent and method for polishing substrate
JP4954462B2 (ja) * 2004-10-19 2012-06-13 株式会社フジミインコーポレーテッド 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US7291280B2 (en) * 2004-12-28 2007-11-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride
JP2007144613A (ja) * 2005-10-25 2007-06-14 Hitachi Chem Co Ltd 有機膜研磨用研磨液及びこれを用いた有機膜の研磨方法
CN100565813C (zh) * 2005-12-16 2009-12-02 Jsr株式会社 化学机械研磨用水系分散体和化学机械研磨方法、以及用于调制化学机械研磨用水系分散体的试剂盒
US20070210278A1 (en) * 2006-03-08 2007-09-13 Lane Sarah J Compositions for chemical mechanical polishing silicon dioxide and silicon nitride
US7297633B1 (en) * 2006-06-05 2007-11-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
US8057561B2 (en) 2006-09-11 2011-11-15 Cabot Microelectronics Corporation Polyoxometalate compositions and methods
KR101396853B1 (ko) * 2007-07-06 2014-05-20 삼성전자주식회사 실리콘 질화물 연마용 슬러리 조성물, 이를 이용한 실리콘질화막의 연마 방법 및 반도체 장치의 제조 방법
US20090056231A1 (en) * 2007-08-28 2009-03-05 Daniela White Copper CMP composition containing ionic polyelectrolyte and method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6491843B1 (en) * 1999-12-08 2002-12-10 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US20050176863A1 (en) * 2004-01-30 2005-08-11 Kazuhiko Yokota Rare earth aggregate formulation using di-block copolmers
CN1727431A (zh) * 2004-07-28 2006-02-01 罗门哈斯电子材料Cmp控股股份有限公司 化学机械抛光二氧化硅和氮化硅的组合物和方法
US20060108326A1 (en) * 2004-11-05 2006-05-25 Cabot Microelectronics Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20080116171A1 (en) * 2006-11-22 2008-05-22 Clarkson University Method For The Preferential Polishing Of Silicon Nitride Versus Silicon Oxide

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CN102165564A (zh) 2011-08-24
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US20130122705A1 (en) 2013-05-16
JP5632378B2 (ja) 2014-11-26
US8822340B2 (en) 2014-09-02
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US20100081281A1 (en) 2010-04-01
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