CN102027584A - 半导体组件的制造方法和半导体组件 - Google Patents

半导体组件的制造方法和半导体组件 Download PDF

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CN102027584A
CN102027584A CN2009801176535A CN200980117653A CN102027584A CN 102027584 A CN102027584 A CN 102027584A CN 2009801176535 A CN2009801176535 A CN 2009801176535A CN 200980117653 A CN200980117653 A CN 200980117653A CN 102027584 A CN102027584 A CN 102027584A
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circuit board
resin
flux activity
semiconductor subassembly
semiconductor
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CN102027584B (zh
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二阶堂广基
杉野光生
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Abstract

本发明的制造半导体组件的方法包括：获得具有形成于其功能表面上的突起电极的半导体晶片，和在一个表面具有焊料凸块且在其另一个表面具有电极垫的电路板；将所述半导体晶片与电路板结合，同时在所述半导体晶片和电路板之间提供具有焊剂活性的树脂层，并且使所述突起电极接触所述焊料凸块，同时穿透所述具有焊剂活性的树脂层，从而获得结合结构；向所述结合结构的电极垫涂覆焊料；和切割所述结合结构以获得多个半导体组件。

Description

半导体组件的制造方法和半导体组件
技术领域
本发明涉及半导体组件的制造方法和半导体组件。
背景技术
目前，随着电子仪器向高级功能化的发展趋势以及在移动工具中的拓展应用，对密度更大且集成化更高的半导体装置的需求不断增加，而这促进了IC封装容量和密度的提高。用于制造此类半导体装置的已知方法为，例如将粘结薄片(切割薄片，dicing sheet)结合到由硅、镓和砷等构成的半导体晶片上，切割晶片以分离单个的半导体元件(分割)，扩展(expanding)所述薄片，选出分割的半导体元件并将所述半导体元件转移到半导体装置的组装程序，其中通过芯片焊接(die-bonding)将所述半导体元件安装到金属引线框、带状基板和硬质有机基板等。
在此类方法中，必须将所述半导体元件逐个地安装到基板等。特别地，从将半导体元件用于区域安装系统，例如倒装法的观点来看，必须在其上独立地形成焊球(solder ball)，这足以使此类方法复杂化。
发明内容
因此，本发明的目标是提供一种能够改进半导体组件生产率的半导体组件制造方法。
上述目标通过本发明下述(1)至(17)完成。
(1)一种制造半导体组件的方法，所述方法包括：
获得具有形成于其功能表面上的突起电极(stud electrode)的半导体晶片，和在一个表面具有焊料凸块且在其另一个表面具有电极垫的电路板；
将所述半导体晶片与电路板结合，同时在所述半导体晶片和电路板之间提供具有助焊剂活性的树脂层，并且使所述突起电极接触所述焊料凸块，同时穿透所述具有助焊剂活性的树脂层，从而获得结合结构；
在所述结合结构的电极垫上涂覆焊料；和
切割所述结合结构以获得多个半导体组件。
(2)如(1)所述制造半导体组件的方法，其中所述电路板具有在其中形成的开口，从而在半导体晶片与电路板结合的步骤中，允许所述具有助焊剂活性的树脂层从其中流出。
(3)如(1)或(2)所述制造半导体组件的方法，其中所述具有助焊剂活性的树脂层是薄膜，并且
在结合步骤中，在所述半导体晶片和电路板结合的同时保持所述薄膜与所述半导体晶片的功能性表面结合。
(4)如(1)或(2)所述制造半导体组件的方法，其中所述具有助焊剂活性的树脂层是薄膜，并且
在结合步骤中，在所述半导体晶片和电路板结合的同时保持所述薄膜与其上形成焊料凸块的电路板表面结合。
(5)如(1)或(2)所述制造半导体组件的方法，其中所述电路板是柔性电路板。
(6)如(1)或(2)所述制造半导体组件的方法，其中所述电路板是刚性电路板。
(7)如(5)所述制造半导体组件的方法，其中所述柔性电路板在面内方向中的热膨胀系数为10[ppm/K]或以下。
(8)如(5)所述制造半导体组件的方法，其中所述柔性电路板在面内方向中的热膨胀系数为4[ppm/K]或以上。
(9)如(6)所述制造半导体组件的方法，其中所述刚性电路板在面内方向中的热膨胀系数为15[ppm/K]或以下。
(10)如(6)所述制造半导体组件的方法，其中所述刚性电路板在面内方向中的热膨胀系数为5[ppm/K]或以上。
(11)如(1)或(2)所述制造半导体组件的方法，其中通过多个与支座结合的电路板来形成所述电路板。
(12)如(1)或(2)所述制造半导体组件的方法，其中通过包含可交联树脂和具有助焊剂活性的化合物的树脂组合物来构成所述具有助焊剂活性的树脂层。
(13)如(12)所述制造半导体组件的方法，其中所述具有助焊剂活性的化合物充当所述可交联树脂的固化剂。
(14)如(12)所述制造半导体组件的方法，其中所述具有助焊剂活性的化合物在分子中具有至少一个羧基基团或酚羟基基团。
(15)如(12)所述制造半导体组件的方法，其中所述具有助焊剂活性的化合物如下式(1)所示：
[化学式1]
HOOC-(CH2)n-COOH  (1)
n为满足0≤n≤20的整数。
(16)如(1)或(2)所述制造半导体组件的方法，其中向涂覆了焊料的电极垫进一步涂覆具有助焊剂活性的树脂层。
(17)通过(1)或(2)所述制造半导体组件的方法获得的半导体组件。
根据本发明，可提供能够改进半导体组件生产率的半导体组件制造方法。
附图说明
本发明的以上和其他的目的、特征和优点将进一步体现于结合附图描述的具体优选实施方式中。
图1：用于图解说明本发明使用的示例性半导体晶片的剖视图；
图2：用于图解说明本发明使用的示例性电路板的剖视图；
图3：用于图解说明本发明使用的带有形成于其上的具有助焊剂活性的树脂层的示例性半导体晶片的剖视图；
图4：用于图解说明本发明使用的通过将半导体晶片与电路板结合而获得的示例性结合结构的剖视图；
图5：用于说明本发明使用的示例性结合结构的剖视图；
图6：用于图解说明本发明使用的示例性电路板的剖视图；和
图7(a)至7(d)：用于图解说明本发明使用的示例性电路板的俯视图。
最佳实施方式
以下将阐述本发明的半导体组件制造方法和半导体组件。
本发明所述的半导体组件制造方法的特征在于包括：获得具有形成于其功能表面上的突起电极的半导体晶片，和在一个表面具有焊料凸块且在其另一个表面具有电极垫的电路板的步骤；将所述半导体晶片与电路板结合，同时在所述半导体晶片和电路板之间提供具有助焊剂活性的树脂层，并且使所述突起电极接触所述焊料凸块，同时穿透所述具有助焊剂活性的树脂层，从而获得结合结构的步骤；在所述结合结构的电极垫上涂覆焊料的步骤；和切割所述结合结构以获得多个半导体组件的步骤。
由上文可知，可以通过在切割电路板前整体堆叠半导体晶片，并切割堆叠结构，以有效的方式生产多个半导体组件。
以下将参考附图详细描述本发明半导体组件制造方法的优选实施方式。
图1是说明在半导体晶片的功能表面上形成的突起电极的位置状态的剖视图。
如图1所示，获得具有形成于功能表面11上的多个突起电极12的半导体晶片1。
突起电极12可列举为，金凸块；通过使用镍和金镀凸块，随后进一步用焊料镀获得的铜凸块或铜柱；和焊料凸块。其中，优选能够在尖端锐化的金凸块。这样可改进粘合程度。
尽管目前最常采用的突起电极12的间距(pitch，中心间的距离)为约50-300μm，但此距离并不限于此，也可采用更小的间距(注意，在以下段落中，使用“-”表示的所有数值范围均包括“-”前后作为下限和上限值的数值)。
另一方面，如图2所示，获得在一个表面具有焊料凸块21且在其另一个表面具有电极垫22的电路板2。
对电路板2没有特别限制，刚性电路板和柔性电路板均可使用。从形成窄间距通孔和经济效率的观点来看，优选使用柔性电路板。
在电路板2的一个实例中，在如图2所示的支座23上的通孔中形成焊料凸块21。在支座23上形成互连图案24。使用阻焊剂25覆盖支座23的一个表面。
尽管目前常将电极垫22的间距设置为0.3-0.8mm，但是为了便于将其作为母板和模块板等的输入/输出端子(terminals)，还可采用更小的间距，而不限于上述范围。
从抑制金属扩散或产生金属化合物的观点来看，更优选使用镍/金镀涂覆的而非裸铜状态的电极垫22。
现将参考图7阐述其内部形成开口30的电路板2，其作为电路板2的实例。
图7(a)显示了半导体晶片1的功能表面11的布局图。图7(b)显示了电路板2的结合部分26(功能表面)的布局图。功能表面11的布局图与结合部分26的布局图具有相同的排列图案。所述排列图案可以是阵列，但不限于此。功能表面11具有形成于其上的多个突起电极(未标明)。另一方面，每个结合部分26具有形成于其一个表面上的多个焊料凸块(未标明)，以及形成于另一个表面上的多个电极垫(未标明)。
如图7(c)和图7(d)所示，在本发明中，在电路板2的每个结合部分26周围形成开口30。在图7(c)所示的实例中，沿每个结合部分26的四个边来形成开口30。也就是说，形成基本平行于每个结合部分26的每对垂直边和每对水平边的四个开口30。在图7(d)所示的实例中，形成基本平行于每个结合部分26的一对垂直边的两个开口30。每个开口30从电路板2的上表面延伸通到下表面。
如上所述，优选电路板2具有开口30，从而在将半导体晶片1与电路板结合2的步骤中，允许所述具有助焊剂活性的树脂层13从其中流出(图7(c)、图7(d))。借助于这种结构，在将半导体晶片1与电路板结合2的热压结合步骤中，可引导过量部分的具有助焊剂活性的树脂层13从开口30流出。这样，可防止突起电极12和焊料凸块21发生位移，并且可完整地获得理想的粘合度水平(可获得通常没有被污染的半导体组件)。
优选在切割线上形成各个开口30。即，在与结合部分26上侧边平行的方向形成与结合部分26上侧边平行排列的多个开口30。因此，可在切割过程中除去开口30。也就是说，可以不经清洗而除去从开口30流出的具有助焊剂活性的树脂层13。因此，可减少步骤的总数，从而可提高半导体组件的生产率。
或者，也可沿每个结合部分26的单个边连续形成多个开口30。如图7(c)所示，优选对每个结合部分26形成四个开口30。从允许具有助焊剂活性的树脂层13从其中有效流出的方面考虑，对每个结合部分26形成更多数量的开口30更为有利。这样，可以更严密地防止突起电极12和焊料凸块21的位移。
开口30的几何形状没有特别限制。例如，如图7(c)、7(d)所示，在与基板垂直的方向上看，各开口30的几何形状可以是矩形。或者，可优选能够确保均匀强度的圆形形状，其中开口的区域足以允许树脂流畅地流入其中。
从切割方向来看，开口30的长度可等于或小于结合部分26的边长。另一方面，从与切割方向垂直的方向来看，开口30的长度可调整至几乎等于切割宽度，但不限于此。通过调整，可在切割过程中除去具有助焊剂活性的树脂层13的流出物。因此，可改进半导体组件的生产率。
在采用柔性电路板的情况下，对其面内方向中的热膨胀系数没有特别限制，其中优选调整至10[ppm/K]或以下，且特别优选4-8[ppm/K]。将热膨胀系数调整至上述范围可确保优异的整体粘合度水平。
在采用刚性电路板的情况下，对其面内方向中的热膨胀系数没有特别限制，其中优选调整至15[ppm/K]或以下，且特别优选5-12[ppm/K]。将热膨胀系数调整至上述范围可确保优异的整体粘合度水平。
或者，如图6所示，电路板2可以是通过将多个(或单个)电路板51结合到支座5上而获得的结构。这样，可使电路板2和半导体晶片1在指定位置结合，从而通过切割等获得多个半导体组件。
随后，通过涂层或层压等形成具有助焊剂活性的树脂层13，从而覆盖半导体晶片1上的多个突起电极12(图3)。这样，突起电极12和焊料凸块21即可与焊料结合，而无需涂覆助焊剂。
尽管在此实施方式中，在将薄膜形式的具有助焊剂活性的树脂层13放置在半导体晶片1上，但也可将薄膜形式的具有助焊剂活性的树脂层13放置在电路板2上(具有形成于其上的焊料凸块21的电路板2表面)，而不限于上述结构。简要而言，以结合的方式将薄膜形式的具有助焊剂活性的树脂层13放置在半导体1或电路板2中任一个的表面上即可。
获得此类具有助焊剂活性的树脂层13的方法可列举为，涂布并干燥浆状树脂组合物的方法，以及层压膜状树脂组合物的方法。
构成具有助焊剂活性的树脂层13的树脂组合物通常包含可交联树脂和具有助焊剂活性的化合物。
可用于本发明的可交联树脂的实例，不仅包括归类为所谓热塑性树脂的那些，例如环氧树脂、氧杂环丁烷树脂(oxetane resin)、酚树脂、(甲基)丙烯酸树脂、不饱和聚酯树脂、苯二甲酸二烯丙酯树脂和马来酰亚胺树脂；还可以是具有官能团，例如羧基基团和环氧基基团的热塑性树脂。其中，由于其优异的固化性、耐久性、固化产物的耐热性、耐湿性和耐化学性，可优选使用环氧树脂。
对于环氧树脂，在室温下以固体形式存在和以液体形式存在的那些环氧树脂均可使用。或者，也可将在室温下以固体形式存在的环氧树脂与在室温下以液体形式存在的环氧树脂组合使用。这样，可在设计树脂层13熔融行为时进一步改进自由度。
对室温下以固体形式存在的环氧树脂没有特别限制，并且可列举为，双酚型环氧树脂，例如双酚A型环氧树脂和双酚S型环氧树脂；酚醛清漆型环氧树脂，例如苯酚酚醛清漆型环氧树脂和甲酚酚醛清漆型环氧树脂；缩水甘油胺型环氧树脂；缩水甘油醚型环氧树脂；和多官能团环氧树脂，例如三官能团环氧树脂和四官能团环氧树脂。更具体地，室温下以固体形式存在的环氧树脂优选包含室温下以固体形式存在的三官能团环氧树脂和甲酚酚醛清漆型环氧树脂。这样可改进所得半导体组件的耐湿性。
对室温下以固体形式存在的环氧树脂没有特别限制，并且可列举为，双酚A型环氧树脂和双酚F型环氧树脂，具有加氢双酚A核的环氧树脂，4-叔丁基儿茶酚型环氧树脂和萘型环氧树脂。
可交联树脂的含量优选为整个树脂组合物的25wt％或以上且75wt％或以下，且特别优选45wt％或以上和70wt％或以下。通过将所述含量调整至上述范围，可获得理想的固化性，并可设计理想的熔融行为。
对具有助焊剂活性的化合物没有特别限制，只要其具有在加热下去除金属氧化物膜的作用。例如，所述化合物可以是单独其本身具有助溶剂活性，或促进助焊剂活性的那些化合物，并且可列举为，活化松香，表示为具有羧基基团的有机化合物的有机酸，胺、酚、醇和吖嗪。
所述具有助焊剂活性的化合物可更具体地列举为，在其分子中具有至少一个羧基基团和/或酚羟基基团的化合物，其可以液体形式或固体形式存在。所述具有助焊剂活性的化合物可列举为二元羧酸。
包含羧基基团的化合物可列举为，脂族酸酐、脂环酸酐、芳族酸酐、脂肪族羧酸和芳香族羧酸。具有酚羟基基团的助焊剂化合物可列举为酚类。
脂族酸酐可列举为，琥珀酸酐、聚己二酸酐和聚癸二酸酐等。
脂环酸酐可列举为，甲基四氢酞酐、甲基六氢酞酐、甲基腐植酸酐(methylhymic anhydride)、六氢酞酐、四氢酞酐、三烷基四氢酞酐和甲基环己烯二羧酸酐等。
芳族酸酐可列举为，邻苯二甲酸酐、偏苯三酸酐、苯均四酸酐、二苯甲酮四羧酸酐、乙二醇二(偏苯三酸酯)和甘油三(偏苯三酸酯)等。
脂肪族羧酸可列举为通常由下式(1)表示的化合物：
[化学式1]
HOOC-(CH2)n-COOH    (1)
n为满足0≤n≤20的整数。
从助焊剂活性、结合过程中的脱气，以及粘合层2在固化后弹性模量和玻璃化温度间平衡的观点来看，在式(1)所示的化合物中，n优选为3或以上且10或以下，并且特别优选4或以上且8或以下。通过将n调整至上述下限值或以上，可抑制固化后弹性模量的增加，由此可改进与待粘附结构的粘附性。另一方面，通过将n调整至上述上限值或以下，可防止树脂层13的弹性模量降低，从而可进一步改进半导体组件的连接可靠性。
上述式(1)所示的化合物可列举为，n＝3的戊二酸(HOOC-(CH2)3-COOH)，n＝4的己二酸(HOOC-(CH2)4-COOH)，n＝5的庚二酸(HOOC-(CH2)5-COOH)，n＝8的癸二酸(HOOC-(CH2)8-COOH)和n＝10的HOOC-(CH2)10-COOH。
其他脂肪族羧酸可列举为，甲酸、乙酸、丙酸、丁酸、戊酸、新戊酸、己酸、辛酸、月桂酸、肉豆蔻醛、棕榈醛、硬脂酸、丙烯酸、甲基丙烯酸、巴豆酸、油酸、富马酸、马来酸、草酸、丙二酸和琥珀酸。
芳香族羧酸可列举为，苯甲酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、苯连三酸、偏苯三酸、苯均三酸、苯偏四甲酸、苯连四酸、苯均四酸、苯六甲酸、甲基苯甲酸(tolyic acid)、二甲苯甲酸、2，3-二甲基苯甲酸、3，5-二甲基苯甲酸、2，3，4-三甲基苯甲酸、甲苯酸、肉桂酸、水杨酸、2，3-二羟基苯甲酸、2，4-二羟基苯甲酸、龙胆酸(2，5-二羟基苯甲酸)、2，6-二羟基苯甲酸、3，5-二羟基苯甲酸、没食子酸(3，4，5-三羟基苯甲酸)、萘酸衍生物，例如1，4-二羟基-2-萘酸和3，5-二羟基-2-萘酸；酚酞和双酚酸等。
具有酚羟基基团的化合物可列举为包含酚羟基基团的单体，例如苯酚、o-甲酚、2，6-二甲苯酚、p-甲酚、m-甲酚、o-乙基苯酚、2，4-二甲苯酚、2，5-二甲苯酚、m-乙基苯酚、2，3-二甲苯酚、氯二甲酚(meditol)、3，5-二甲苯酚、p-叔丁基苯酚、儿茶酚、p-叔戊基苯酚、间苯二酚、p-辛基苯酚、p-苯基苯酚、双酚A、双酚F、双酚AF、联苯二酚、二烯丙基双酚F、二烯丙基双酚A、三苯酚和四苯酚；苯酚酚醛清漆树脂、o-甲酚酚醛清漆树脂、双酚F酚醛清漆树脂、双酚A和酚醛清漆树脂等。
此类具有助焊剂活性的化合物优选为具有助焊剂活性的固化剂，其能够通过与可交联树脂，例如与环氧树脂的反应以三维模式并入。这样可省略激活助焊剂后的清洗步骤，并且进一步改进可靠性。
具有助焊剂活性的固化剂可列举为，在其单个分子中具有至少两个能够对可交联树脂，例如环氧树脂进行加成的酚羟基基团，以及至少一个与芳基直接结合的羧基基团，并且对金属氧化物膜显示助焊剂活性的化合物。具体实例包括苯甲酸衍生物，例如2，3-二羟基苯甲酸、2，4-二羟基苯甲酸、龙胆酸(2，5-二羟基苯甲酸)、2，6-二羟基苯甲酸、3，4-二羟基苯甲酸和没食子酸(3，4，5-三羟基苯甲酸)；萘酸衍生物，例如1，4-二羟基-2-萘酸、3，5-二羟基-2-萘酸和3，7-二羟基-2-萘酸；酚酞和双酚酸等。
这些具有助焊剂活性的化合物可单独使用，或将其中两种或更多种以组合的方式使用。
尽管对具有助焊剂活性的化合物的含量没有特别限制，但优选将其调整至整个树脂化合物的1wt％或以上且30wt％或以下，且特别优选5wt％或以上且25wt％或以下。低于上述下限的含量可导致助焊剂活性不足，而超出上述上限的含量可导致部分具有助焊剂活性的化合物没有与可交联树脂反应，并可导致位移。通过将所述含量调整至上述范围，可减少铜箔表面上氧化膜，从而获得理想的强结合。
所述树脂组合物还可包含固化剂，对所述固化剂没有特别的限制。
所述固化剂可列举为，酚类、胺类和硫醇类。在使用环氧树脂作为可交联树脂的情况下，从其与环氧树脂的理想反应性，固化期间尺寸变化小并且适合的固化后物理性质(例如，耐热性或耐湿性等)的观点来看，可优选使用酚类。
尽管对酚类没有特别限制，从粘合层2的固化后物理性质的观点来看，可优选具有较高官能度的双官能酚类。所述酚类可列举为，双酚A、四甲基双酚A、二烯丙基双酚A、联苯二酚、双酚F、二烯丙基双酚F、三苯酚、四苯酚、苯酚酚醛清漆和甲酚酚醛清漆，其中，考虑到粘性、与环氧树脂的反应性以及固化后物理性质，可优选使用苯酚酚醛清漆和甲酚酚醛清漆。
尽管对用作固化剂的苯酚酚醛清漆的含量没有特别限制，但从使可交联树脂完全固化的观点来看，优选将其调整至整个树脂组合物的5wt％或以上，且特别优选10wt％或以上。未与环氧树脂反应的部分苯酚酚醛清漆可能导致位移。从防止苯酚酚醛清漆作为残余物保留的观点来看，可优选将其含量调整至整个树脂组合物的30wt％或以下，且特别优选25wt％或以下。
在使用环氧树脂作为可交联树脂的情况下，可基于相对于所述环氧树脂的当量确定所述苯酚酚醛清漆的含量。更具体地，优选将苯酚酚醛清漆相对于环氧树脂的当量调整至0.5或以上且1.2或以下，特别优选0.6或以上且1.1或以下，最优选0.7或以上且0.98或以下。通过将苯酚酚醛清漆相对于环氧树脂的当量调整至上述下限值或以上，可确保固化后的耐热性和耐湿性，而通过将苯酚酚醛清漆相对于环氧树脂的当量调整至上述上限值或以下，可减少可能在固化后仍未与环氧树脂反应的苯酚酚醛清漆的量，从而可改进抗位移性。
其他固化剂可列举为，咪唑类化合物和含磷化合物。
所述咪唑类化合物可列举为，咪唑、2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1，2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-苯基-4-甲基咪唑、1-苯甲基-2-苯基咪唑、1-苯甲基-2-甲基咪唑、1-氰基乙基-2-甲基咪唑、1-氰基乙基-2-乙基-4-甲基咪唑、1-氰基乙基-2-十一烷基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-十一烷基咪唑鎓偏苯三酸酯、1-氰基乙基-2-苯基咪唑鎓偏苯三酸酯、2，4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2，4-二氨基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2，4-二氨基-6-[2’-乙基-4-甲基咪唑基-(1’)]-乙基-s-三嗪、2，4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸酯加成物、2-苯基咪唑异氰脲酸酯加成物、2-甲基咪唑异氰脲酸酯加成物、2-苯基-苯基-4，5-二羟基二甲基咪唑和2-苯基-4-甲基-5-羟基甲基咪唑。
在这些咪唑类化合物中，可优选使用熔点为150℃或以上的那些。这样更易于同时满足树脂层13的固化和助焊剂功能。更具体地，采用上述咪唑类化合物可成功地避免预期在熔点过低时出现的情况，例如树脂层13在焊料凸块21上的氧化膜被除去且焊料凸块21和突起电极12结合之前固化，从而使结合不稳定或破坏树脂层13的耐久性。
熔点为150℃或以上的咪唑类化合物可列举为，2-苯基羟基咪唑、2-苯基-4-甲基羟基咪唑和2-苯基-4-甲基咪唑。所述咪唑类化合物的熔点上限值没有特别限制，但可根据，例如树脂层13的结合温度恰当地确定。
尽管对用作固化剂的咪唑类化合物的含量没有特别限制，但优选将其调整至整个树脂化合物的0.005wt％或以上且10wt％或以下，且特别优选0.01wt％或以上且5wt％或以下。通过将所述咪唑类化合物的含量调整至上述下限值或以上，可使所述咪唑类化合物更有效地充当所述可交联树脂的固化催化剂，从而改进树脂层13的固化性。另一方面，通过将所述咪唑类化合物的含量调整至上述上限值或以下，所述树脂可在焊料的熔融温度下的熔体粘度不过高，从而可获得理想的焊料结合结构。此外，还可进一步改进树脂层13的耐久性。
所述含磷化合物可列举为，三苯基膦；四取代鏻与多官能酚化合物的分子化合物；和四取代鏻和质子供体和三烷氧基硅烷的分子化合物。其中，特别优选四取代鏻和多官能酚化合物的分子化合物；和四取代鏻和质子供体和三烷氧基硅烷的分子化合物，其对于树脂层13的快速固化型更为有利，对半导体组件的铝板的腐蚀性更小，和树脂层13的耐久性。
尽管没有具体限定，但所述树脂组合物可包含不同于上述可交联树脂的成膜树脂。
可用于本发明的成膜树脂包括苯氧基树脂、聚酯树脂、聚氨酯树脂、聚酰亚胺树脂、硅氧烷改性的聚酰亚胺树脂、聚丁二烯、聚丙烯、苯乙烯-丁二烯-苯乙烯共聚物、苯乙烯-乙烯-丁烯-苯乙烯共聚物、聚甲醛树脂、聚乙烯醇缩丁醛树脂、聚乙烯醇缩乙醛树脂、丁基橡胶、氯丁二烯橡胶、聚酰胺树脂、丙烯腈-丁二烯共聚物、丙烯腈-丁二烯-丙烯酸共聚物、丙烯腈-丁二烯-苯乙烯共聚物、聚乙酸乙烯酯、尼龙和丙烯酸橡胶。这些树脂可单独使用，或将其中两种或更多种以组合的方式使用。
用作成膜树脂的苯氧基树脂优选具有5000-15000的数均分子量。通过使用此范围的苯氧基树脂，可抑制树脂层13在固化前的流动性，从而可使所得层的厚度均匀。所述苯氧基化合物可列举为，具有双酚A型、双酚F型和联苯型骨架的那些化合物，但不限于此。从抑制起泡或在结合和焊接过程中常见的高温下分离的观点来看，优选具有1％或以下的饱和水含量的苯氧基树脂。
或者，出于改进粘附性或与其他树脂相容性的目的，也可使用具有腈基团、环氧基团、羟基基团和羧基基团的树脂作为成膜树脂。例如，可使用丙烯酸橡胶(acryl rubber)作为此类树脂。
使用丙烯酸橡胶作为成膜树脂可改进薄膜形式的树脂层13在形成过程中膜形成的稳定性。所述应用还有助于使树脂层13具有较低的弹性模量，从而减少待粘附结构和树脂层13之间的残余应力，可由此改进对待粘附结构的粘性。
所述丙烯酸橡胶优选为包含具有环氧基团、羟基基团、羧基基团或腈基基团的单体单元的(甲基)丙烯酸酯共聚物。通过选择，可改进对待粘附结构，例如半导体组件的背面，或半导体组件的包被材料的粘性。可用于此类(甲基)丙烯酸酯共聚物的单体可列举为，具有缩水甘油基基团的(甲基)丙烯酸缩水甘油酯，具有羟基基团的(甲基)丙烯酸酯，具有羧基基团的(甲基)丙烯酸酯和具有腈基基团的(甲基)丙烯酸酯。
其中，特别优选使用包含具有缩水甘油基基团或羧基基团的单体单元的(甲基)丙烯酸酯共聚物。通过所述应用，可进一步加速粘附膜的固化，并可由此改进与待粘附结构的粘性。
从改进对待粘附结构粘性的观点来看，在使用包含具有羧基基团的单体的(甲基)丙烯酸酯共聚物时，通常可将所述共聚物中具有羧基基团的单体单元的含量调整至整个(甲基)丙烯酸酯共聚物的0.5wt％或以上，且优选调整至1wt％或以上。从进一步改进树脂层13耐久性的观点来看，通常可将具有羧基基团的单体单元的含量调整至整个(甲基)丙烯酸酯共聚物的10wt％或以下，且优选5wt％或以下。
所述(甲基)丙烯酸酯共聚物的重均分子量通常为1,000或以上且1,000,000或以下，优选3,000或以上且900,000以下。通过调整至上述范围，可进一步改进树脂层13的成膜性，并可确保结合过程中的流动性。
可通过凝胶渗透色谱(GPC)测量所述(甲基)丙烯酸酯共聚物的重均分子量。通常使用来自TOSOH公司(TOSOH Corporation)的SC-8020型高效GPC仪，由填充了TSKgel GMHXL-L的柱，在40℃的温度下，使用四氢呋喃作为溶剂进行测量。
从防止粘附膜变得过粘，以进一步改进可加工性的观点来看，通常将所述(甲基)丙烯酸酯共聚物的玻璃化温度调整至0℃或以上，优选5℃或以上。从进一步改进低温粘附性的观点来看，优选将所述(甲基)丙烯酸酯共聚物的玻璃化温度调整至30℃或以下，且优选20℃或以下。
可通过例如，在恒定负载(10mN)下使用热机械分析仪(Seiko InstrumentsInc.的TMA/SS6100)拉伸薄膜，同时以5℃/分钟的升温速率从-65℃升温来测量所述(甲基)丙烯酸酯共聚物的玻璃化温度，并可基于转折点确定。
尽管对所述成膜树脂的含量没有特别限制，但优选将其调整至整个树脂化合物的5wt％或以上且50wt％或以下。通过添加上述范围内的成膜树脂，可防止成膜性降低，并且可防止树脂层13的弹性模量在固化后增大，从而可进一步改进对待粘附结构的粘性。此外，通过在上述范围内的添加，可防止树脂层13的熔融粘度增大。
在需要特别高水平的特性，例如耐热性、尺寸稳定性和耐湿性的情况下，优选所述树脂组合物进一步包含无机填料。所述无机填料可列举为，硅酸盐，例如滑石、煅烧粘土、未煅烧粘土、云母和玻璃；氧化物，例如氧化钛、氧化铝和熔融硅石的粉末(熔融的球形硅石，熔融的碎硅石)和结晶硅石；碳酸盐，例如碳酸钙、碳酸镁和水滑石；氢氧化物，例如氢氧化铝、氢氧化镁和氢氧化钙；硫酸盐或亚硫酸盐，例如硫酸钡、硫酸钙和亚硫酸钙；硼酸盐，例如硼酸锌、偏硼酸钡、硼酸铝、硼酸钙和硼酸钠；和氮化物，例如氮化铝、氮化硼和氮化硅。这些无机填料可单独使用，或将其中两种或更多种以组合的方式使用。其中，优选硅石粉末，例如熔融硅石和结晶硅石，且特别优选球形熔融硅石。
通过向所述树脂组合物中添加无机填料，可改进所述树脂组合物在固化后的耐热性、耐湿性、强度以及树脂层13的可分离性。尽管对所述无机填料的几何形状没有特别限定，从改进树脂组合物以构成不显示特别的各向异性的树脂层的观点来看，优选球形。
尽管对所述无机填料的平均粒径没有特别限制，但优选将其调整至0.5μm或以下，特别优选0.01-0.45μm，且最优选0.01-0.3μm。由于无机填料的絮凝趋势增大，过小的平均粒径可降低强度，而过大的粒径可损害树脂层13的透明度，从而难以识别半导体组件表面上的标记，并由此导致难以进行半导体组件和基板之间的排列。
尽管对所述无机填料的含量没有特别限制，但优选将其调整至整个树脂化合物的10-60wt％，且特别优选20-50wt％。过少的无机填料含量可损害对耐热性、耐湿性和强度的改进作用，而过大的含量可降低树脂层13的透明度或降低树脂层13的粘性。
或者，所述环氧树脂组合物还可包含硅烷偶联剂。包含硅烷偶联剂可进一步改进树脂层13对待粘附结构的粘性。所述硅烷偶联剂可列举为，环氧硅烷偶联剂和包含芳基的氨基硅烷偶联剂。这些硅烷偶联剂可单独使用，或将其中两种或更多种以组合的方式使用。尽管对所述硅烷偶联剂的含量没有特别限制，但优选将其调整至整个树脂化合物的0.01-5wt％。
所述树脂组合物还可包含除上述之外的其他成分。例如，从改进树脂的各种性质，包括相容性、稳定性和可使用性的观点来看，可适当地添加各种添加剂。
将在其上提供了具有助焊剂活性的树脂层13的半导体晶片1与电路板2结合，从而使突起电极12接触焊料凸块21，同时在其中放置具有助焊剂活性的树脂层13，从而获得结合结构3(图4)。在此过程中，突起电极12穿透树脂层13，在半导体晶片1和电路板2提供助焊剂活性，并与焊料凸块21相接触。这样，使突起电极12在接触焊料凸块21的同时，被具有助焊剂活性的树脂层13覆盖。
尽管对结合的条件没有特别限制，但优选在25-175℃，每单位面积0.5-5kgf的负载下，将突起电极12和焊料凸块21排列并暂时结合，并使其在200-300℃，每单位面积0.1-15kgf的负载下充分结合1-60秒。更优选在200-230℃压力结合5-180秒。结合的温度取决于焊料凸块中焊料种类的熔点，而负载取决于待结合端子的数量。
由于在突起电极12和焊料凸块21结合的同时在其中放置具有助焊剂活性的树脂层13，所以可结合焊料凸块21同时抑制其表面被氧化(同时除去表面上的氧化膜)。
可优选进一步加热结合结构3，从而固化构成具有助焊剂活性的树脂层13的树脂。
尽管对加热条件没有特别限制，但优选在120-200℃加热30-180分钟，从而可固化具有助焊剂活性的树脂层13，填充螺杆电极12和焊料凸块21之间的空隙，并可由此提高结合的可靠性。
尽管在此实施方式中，在获得结合结构13后固化具有助焊剂活性的树脂层13，但该过程并不限于此。也可以在固化具有助焊剂活性的树脂层13后获得结合结构13。
随后，向结合结构3的电极垫22涂覆焊料。
优选如图5所示的那些焊球4作为焊料。通过配制，可简化在其他基板等上的二次安装。
涂覆焊球4的方法可列举为电镀、焊膏印刷和植球(ball mounting)。
随后，切割具有排列于其上的焊球4的结合结构3以获得多个半导体组件31。在切割结合结构3的过程中，将切割薄片连接到结合结构3中与排列有焊球4的表面相反的表面上。
可优选在切割前，首先将具有助焊剂活性的树脂层放置到结合结构3中排列有焊球4的表面上。这样，可简化二次安装中的焊料结合(solder bonding)，省略助焊剂处理，并可由此改进生产率和二次安装后的可靠性，例如温度循环性质和坠落试验性质。
可直接使用商购的任何切割薄片作为用于本发明的切割薄片。
通过上述过程，可提供制造半导体组件的方法，其中可将切割前的半导体晶片与电路板结合，并通过切割堆叠结构以有效的方式生产多个半导体组件。也就是说，根据所述制造方法，可减少步骤的总数。
实施例
下文将基于以下实施例和比较例描述本发明，但本发明并不限于此。
实施例1
1、具有突起电极的半导体晶片的制造
通过金-接线板结合法(gold-wire board bonding process)，使用焊料凸块粘结剂(bump bonder)在半导体晶片(直径6-英寸，后250-μrm)上以70-μm的间距形成Al垫上的金突起凸块(stud bump)。每个金突起凸块的几何形状特征为：直径30-35μm，凸块基座15-20μm，凸块高40-45μm，并带有保持未水平化的尖端。
2、具有焊料凸块的柔性电路板的制造
使用由12μm厚的铜箔和聚酰亚胺膜(来自Ube-Nitto Kasei Co.，Ltd.的BE2508DFF，线性膨胀系数＝11ppm/K，厚度＝25μm)构成的铜层压板作为支座，对其进行激光加工，以使内部具有直径30-μm的通孔，去沾污，随后用焊料(Sn-Ag)电镀以在通孔中形成焊料凸块。
保护其上排列有焊料凸块的表面，在铜侧添加阻焊剂，通过曝光、显影、蚀刻和剥离阻焊剂形成互联图案。随后，通过电镀包被阻焊剂，并依次进行预固化、曝光、显影和后固化，从而仅暴露出作为外连接端子的焊接区(lands)。随后对焊接区实施镍/金镀，从而制造具有形成于其上的焊料凸块的柔性电路板。最后，对所述柔性电路板进行外形加工，包括使用模具形成开口。
3、具有助焊剂活性的树脂层的制备
通过将以下成分溶解于甲乙酮制备固含量为40％的树脂清漆：作为可交联树脂的47.0wt％环氧树脂(NC6000，环氧当量200g/eq，Nippon Kayaku Co.，Ltd.)；作为成膜树脂的14.6wt％丙烯酸酯共聚物(丙烯酸丁酯-丙烯酸乙酯-丙烯腈-丙烯酸-丙烯酸羟乙基酯共聚物SG-708-6，Nagase ChemteX Corporation，重均分子量：500,000)和14.6wt％丙烯酸树脂(丙烯酸-苯乙烯共聚物，重均分子量：5,500，UC-3900，TOAGOSEI Co.，Ltd.)；作为固化剂的0.3wt％固体酚醛树脂(PR-53647，羟基当量104g/OH基团，Sumitomo Bakelite Co.，Ltd.)；作为固化加速剂的0.1wt％咪唑类化合物(2P4MHZ，Shikoku ChemicalsCorporation)；作为助焊剂化合物的12.9wt％酚酞；作为偶联剂的0.4wt％丙基三甲氧基硅烷(KBM303，Shin-Etsu Chemical Co.，Ltd.)；和作为流平剂的0.1wt％丙烯酸聚合物(BYK-361N，BYK Japan KK)。
将所得清漆涂布到聚酯片上，随后使其在设定适合蒸发溶剂的温度下干燥，从而获得具有助焊剂活性的树脂层。
4、结合结构的制造
使用真空膜层压机(“MVLP-500/600-2A”，Meiki Co.，Ltd.)将具有助焊剂活性的树脂层与半导体晶片的功能表面侧结合。在120℃、0.8MPa的条件下，使用真空膜层压机进行具有助焊剂活性的树脂层片的结合30秒。得到与半导体晶片结合的具有助焊剂活性的树脂层的厚度为30μm。
随后，通过热压结合使其上具有突起电极的半导体晶片与其上具有焊料凸块的柔性电路板暂时结合，同时使用压床(VH1-1758)垂直排列焊料凸块和金突起凸块。暂时热压结合在150℃、1.0MPa下进行。使加热持续升高至250℃，同时逐渐减低压力(0.1MPa或以下)，从而使晶片上的金突起凸块与柔性电路板上的熔融焊料凸块合金化。通过在180℃进一步加热120分钟获得同样以电结合的结合结构(晶片和柔性电路板)。
5、半导体组件的制造
在由此获得的半导体晶片上安装焊球，剥去商购切割薄片的覆盖膜，随后结合切割薄片，使其粘附面背对厚度为250μm的6-英寸晶片的背面。使用划片机(DISCO Corporation)以30,000rpm的轴转数和50mm/sec的切割速度切割所得结合结构，从而获得多个半导体组件。
实施例2
实施例2与实施例1相同，但使用下述电路板。
此实施例中，作为具有焊料凸块的柔性电路板使用的支座由线性膨胀系数为2.5ppm/K的聚酰亚胺(TOYOBO Co.，Ltd.)制成。
实施例3
实施例3与实施例1相同，但使用图6所示具有与支座5结合的多个电路板51的产品作为电路板。注意，本实施例中使用的电路板中没有形成开口。
实施例4
实施例4与实施例1相同，但使用下述电路板。
使用铜层压板(ELC-4785GS，Sumitomo Bakelite Co.，Ltd.，线性膨胀系数＝9ppm/K)，其包含厚30-μm的玻璃布，并具有厚12μm的铜箔。
实施例5
实施例5与实施例1相同，但使用以下产品作为具有助焊剂活性的树脂层。
通过将以下成分溶解于甲乙酮制备固含量为40％的树脂清漆：作为可交联树脂的47.4wt％环氧树脂(NC6000，环氧当量200g/q，Nippon Kayaku Co.，Ltd.)；作为成膜树脂的14.6wt％丙烯酸酯共聚物(丙烯酸丁酯-丙烯酸乙酯-丙烯腈-丙烯酸-丙烯酸羟乙基酯共聚物SG-708-6，Nagase ChemteX Corporation，重均分子量：500,000)和14.6wt％丙烯酸树脂(丙烯酸-苯乙烯共聚物，重均分子量：5,500，UC-3900，TOAGOSEI Co.，Ltd.)；作为固化剂的16.4wt％固体酚醛树脂(PR-53647，羟基当量104g/OH基团，Sumitomo Bakelite Co.，Ltd.)；作为固化加速剂的0.1wt％咪唑类化合物(2P4MHZ，Shikoku ChemicalsCorporation)；作为助焊剂化合物的6.4wt％癸二酸；作为偶联剂的0.4wt％丙基三甲氧基硅烷(KBM303，Shin-Etsu Chemical Co.，Ltd.)；和作为流平剂的0.1wt％丙烯酸聚合物(BYK-361N，BYK Japan KK)。将所得清漆涂布到聚酯片上，随后使其在设定适合蒸发溶剂的温度下干燥，从而获得具有助焊剂活性的树脂层。
比较例1
在此比较例中制造倒装芯片(芯片级封装件)。
使用旋涂仪在半导体晶片(大小：6英寸；厚350μm)上涂布光敏聚酰亚胺(CRC-8300，Sumitomo Bakelite Co.，Ltd.)，随后对其进行曝光、显影和固化，从而暴露Al板。在此开口中，通过化学镀涂覆镍，同样通过化学镀涂覆金，并在其上安装焊球。将产物切割成芯片。
随后，使用倒装芯片粘结剂将安装有焊球的上述芯片结合到在与所述焊球相同的位置具有端子的硬质基板(Arm Electronics Co.，Ltd.)。注意，首先通过印刷使用预焊料(pre-solder)包被硬质基板上表面上的端子，并且在结合前先使用助焊剂除去焊料上下表面上的氧化膜。
在结合后，清洗除去助焊剂，向结合部分中的间隙中注射毛细底料填充树脂(CRP-4152D，Sumitomo Bakelite Co.，Ltd.)，并固化树脂。所述硬质基板具有预先形成在其背面的用于区域安装的端子，能够通过所述端子在基板上进行安装，其中在正面侧和背面侧的端子与铜电路相连。通过将焊球安装到用于区域安装的端子获得倒装芯片型CSP。
比较例2
制造再分配型(re-distribution type)晶片级CSP，作为比较例。
使用旋涂仪在半导体晶片(大小：6英寸；厚350μm)上涂布光敏聚酰亚胺(CRC-8300，Sumitomo Bakelite Co.，Ltd.)，随后对其进行曝光、显影和固化，从而暴露Al板。通过溅射形成厚
Figure BPA00001256115600191
的钛膜，通过溅射在其上堆叠厚
Figure BPA00001256115600192
的铜膜，涂布阻焊剂，通过曝光和显影在阻焊剂中形成使芯片上的端子朝向用于在电路板上区域安装的外连接端子再分布的电路图案，并仅在电路图案部分上镀铜。随后，除去阻焊剂，并蚀刻铜膜和钛膜以形成铜电路图案。再次在其上涂布光敏聚酰亚(CRC-3900，Sumitomo Bakelite Co.，Ltd.)作为绝缘膜，对其进行曝光、显影并固化图案，从而暴露出作为外连接末端的焊接区，随后对焊接区镀镍并继续镀金，并在其上安装焊球。将产品切割成芯片大小，从而获得半导体组件。
对实施例和比较例中获得的半导体组件进行以下评估。评估项目与细节一起显示如下。结果显示于表1中。
1、生产率
假定比较例1中的步骤数量为(100)，分别检测其他实施例和比较例的生产率并进行比较。各标识的含义如下：
A：假定比较例1中的步骤数量为(100)，步骤数量为40或以下且小于60；
B：假定比较例1中的步骤数量为(100)，步骤数量为60或以下且小于80；
C：假定比较例1中的步骤数量为(100)，步骤数量为80或以下且小于100；和
D：假定比较例1中的步骤数量为(100)，步骤数量为100或以上。
2、结合可靠性
基于温度循环测试后电接触是否有效来评估半导体组件的结合可靠性。
更具体地，使用数字万用表测量半导体组件和电路板之间的联结电阻。对制造的半导体组件进行测量，并且在-65℃1小时且150℃1小时的1,000个温度循环后进行测量。各标识的含义如下：
A：在20个半导体组件中的20个中确认电接触；
B：在20个半导体组件中的19个中确认电接触；
C：在20个半导体组件中的16-17个中确认电接触；和
D：在20个半导体组件中的16个或以下确认电接触。
3、耐回流焊接性(reflow crack resistance)
通过在条件为85℃，相对湿度85％的恒温/恒湿箱中处理所得半导体组件168小时以吸收水汽，随后立即使用回焊装置对其进行回焊加工(最高260℃，10秒)，并使用超声裂纹探测器确认是否存在内部空隙来评估耐回流焊接性。所述处理按照JEDEC标准进行。各标识的含义如下所示。样品的数量为20个。
A：在处理后没有检测到内部空隙；和
D：在处理后检测到内部空隙。
表1
Figure BPA00001256115600201
由表1清楚可见，实施例1-5显示了优异的生产率。
还证明实施例1-5中获得的半导体组件具有优异的结合可靠性和耐回流焊接性。

Claims (17)

1.一种制造半导体组件的方法，所述方法包括：
获得半导体晶片和电路板，所述半导体晶片具有在其功能表面上形成的突起电极，所述电路板在一个表面具有焊料凸块且在其另一个表面具有电极垫；
将所述半导体晶片与所述电路板结合，同时在所述半导体晶片和所述电路板之间提供具有助焊剂活性的树脂层，并且使所述突起电极与所述焊料凸块接触，同时穿透所述具有助焊剂活性的树脂层，从而获得结合结构；
向所述结合结构的所述电极垫涂覆焊料；和
切割所述结合结构以获得多个半导体组件。
2.如权利要求1所述制造半导体组件的方法，
其中所述电路板具有在其中形成的开口，从而在所述半导体晶片与所述电路板结合的步骤中，允许所述具有助焊剂活性的树脂层流出。
3.如权利要求1或2所述制造半导体组件的方法，其中所述具有助焊剂活性的树脂层是薄膜，并且
在所述结合步骤中，在所述半导体晶片与所述电路板结合的同时保持所述薄膜与所述半导体晶片的所述功能性表面结合。
4.如权利要求1或2所述制造半导体组件的方法，其中所述具有助焊剂活性的树脂层是薄膜，并且
在所述结合步骤中，在所述半导体晶片和所述电路板结合的同时保持所述薄膜与形成有所述焊料凸块的所述电路板表面结合。
5.如权利要求1或2所述制造半导体组件的方法，其中所述电路板是柔性电路板。
6.如权利要求1或2所述制造半导体组件的方法，其中所述电路板是刚性电路板。
7.如权利要求5所述制造半导体组件的方法，其中所述柔性电路板在面内方向中的热膨胀系数为10[ppm/K]或以下。
8.如权利要求5所述制造半导体组件的方法，其中所述柔性电路板在面内方向中的热膨胀系数为4[ppm/K]或以上。
9.如权利要求6所述制造半导体组件的方法，其中所述刚性电路板在面内方向中的热膨胀系数为15[ppm/K]或以下。
10.如权利要求6所述制造半导体组件的方法，其中所述刚性电路板在面内方向中的热膨胀系数为5[ppm/K]或以上。
11.如权利要求1或2所述制造半导体组件的方法，其中通过将多个与支座结合的电路板来形成所述电路板。
12.如权利要求1或2所述制造半导体组件的方法，其中通过包含可交联树脂和具有助焊剂活性的化合物的树脂组合物来形成所述具有助焊剂活性的树脂层。
13.如权利要求12所述制造半导体组件的方法，其中所述具有助焊剂活性的化合物充当所述可交联树脂的固化剂。
14.如权利要求12所述制造半导体组件的方法，其中所述具有助焊剂活性的化合物在分子中具有至少一个羧基基团或酚羟基基团。
15.如权利要求12所述制造半导体组件的方法，其中所述具有助焊剂活性的化合物如下式(1)所示：
化学式1
HOOC-(CH2)n-COOH    (1)
n为满足0≤n≤20的整数。
16.如权利要求1或2所述制造半导体组件的方法，其中向涂覆了所述焊料的所述电极垫进一步涂覆具有助焊剂活性的树脂层。
17.通过权利要求1或2所述的制造半导体组件的方法获得的半导体组件。
CN2009801176535A 2008-05-16 2009-05-13 半导体组件的制造方法和半导体组件 Expired - Fee Related CN102027584B (zh)

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