TW201005814A - Method for manufacturing semiconductor device and semiconductor device - Google Patents

Method for manufacturing semiconductor device and semiconductor device Download PDF

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Publication number
TW201005814A
TW201005814A TW098116117A TW98116117A TW201005814A TW 201005814 A TW201005814 A TW 201005814A TW 098116117 A TW098116117 A TW 098116117A TW 98116117 A TW98116117 A TW 98116117A TW 201005814 A TW201005814 A TW 201005814A
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TW
Taiwan
Prior art keywords
semiconductor component
component according
semiconductor
resin
manufacturing
Prior art date
Application number
TW098116117A
Other languages
English (en)
Inventor
Hiroki Nikaido
Mitsuo Sugino
Original Assignee
Sumitomo Bakelite Co
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Filing date
Publication date
Application filed by Sumitomo Bakelite Co filed Critical Sumitomo Bakelite Co
Publication of TW201005814A publication Critical patent/TW201005814A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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Description

201005814 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體零件之製造方法及半導體零件。 【先前技術】 對應於近年來電子機器之高機能化與朝行動用途之擴 展’半導體裝置之高密度化、高積體化之需求正高羅中，進 展著ic封裝之大容量高密度化。作為此種半導體裝置之製 造方法，係在由矽、鎵、砷等所形成之半導體用晶圓上黏貼 黏著片（切割片）’藉切割切斷分散(個片化）為各個半導體元 件後’進行經擴展（expanding)、個片化之半導體元件的增 層’接著移送至將半導體元件粒接(diebonding)至金屬引線 框架、軟性基板(tape substrate)及有機硬質基板上的半導體 裝置組裝步驟。 於此種步驟中，必須個別地進行對半導體元件之基板等的 搭載。再者，為了對應倒裝晶片安裝等之區域安裝方式，必 須個別地形成焊球，使步驟繁雜。 【發明内容】 本發明之目的在於提供一種可提升半導體零件之生產性 的半導體零叙製造方法。 此種目的係藉由下述⑴〜(n)記載之本發明所達成。 ⑴一種半導財件之製造方法，係含有： :備於力此面上形成有突起電極的半導體晶圓，與於一面 098116117 201005814 側上具有焊錫凸塊並於另一 的步驟； 面側上具有電極塾之電路基板 * 接合步驟’係於上述半導體晶圓與上述電路基板之間設置 ，具有焊翁性的樹歸，並以將上述具有焊劑活性之樹脂層 穿破而使上述突起電極與上述_凸塊抵接之方式，使上述 半導體晶圓與上述電路基板崎接合而得到接合體； 於上述接合體之上述電極墊上賦予烊錫材的步驟；與 參 訂述接合體切斷而得到複數之半導體零件的步驟了 ⑺如⑴之半導财件之製造方法，其中，在上述電路基板 上’係在使上述半賴晶圓與上述電路基㈣行接合時，形 成使上述具有焊劑活性的樹脂層滲出的開口部。 (3)如（1)或(2)之半導體零件之製造方法’其中，上 劑活性的樹脂層係薄膜； 八 纟上述接合步驟中，以將上述薄膜貼附於上述半導體晶圓 籲之上述功能面的狀態’使上述半導體晶圓與上述電路基板進 行接合。 (4) 如⑴或(2)之半導體零件之製造方法，#中上述具有焊 劑活性的樹脂層係薄膜； 在上述接合步驟中，以將上述賴_於上述電路基板之 具有上述焊錫凸塊之面的狀態，使上述半導體晶圓與上述電 路基板進行接合。 (5) 如⑴或(2)之半導體零件之製造方法，其中，上述電路基 098116117 5 201005814 板係可撓性電路基板。 上述電路基 (6)如（1)或(2)之半導體零件之製造方法，其中 板係剛性電路基板。 ⑺如(取半導體零件之製造方法，其中，上述可繞性 基板之基板平面方向的麟脹係數為lG[PPm/K]以下。 電路 ⑻如(5)之半導體零件之製造方法，其巾，上述可撓性電路 基板之基板平面方向的熱膨脹係敖為4[PPm/K]以上。
(9)如⑹之半導體零件之製造方法，其中，上述·電路基 板之基板平面方向的熱膨脹係數為15[ppm/K]以下。土 (10) 如（6)之半導體零件之製造方法，其中，上述剛性電路基 板之基板平面方向的熱膨脹係數為5[ppm/K]以上。 (11) 如⑴或(2)之半導體零件之製造方法，其中，上述電路 基板係於支撐體上貼黏著複數之電路基板。
(12) 如（1)或（2)之半導體零件之製造方法，其中，上述具有 焊劑活性的樹脂層係由含有可進行交聯反應之樹脂、與具有 焊劑活性之化合物的樹脂組成物所構成。 (13)如（12)之半導體零件之製造方法，其中，上述具有焊劑 活性的化合物，係具有上述可進行交聯反應之樹脂之硬化劑 的作用。 (14)如（12)之半導體零件之製造方法，其中，上述具有焊劑 活性的化合物，係於分子中具有至少一個以上之羧基或酚性 羥基者。 098116117 6 201005814 (15) 如（12)之半導體零件之製造方法，其中，上述具有焊劑 活性的化合物，係下述式（丨)所記載者。 . [化 1] HOOC-(CH2)n-COOH (1) (η為0以上且20以下之整數。） (16) 如（1)或(2)之半導體零件之製造方法，其中，在上述賦 予了焊錫材之上述電極墊上，進一步配置具有焊劑活性的樹 參 脂層。 (Π) —種半導體零件，係由（1)或(2)之半導體零件之製造方 法所製得。 根據本發明’可提供一種能提升半導體零件之生產性的半 導體零件之製造方法。 【實施方式】 i述目的及其他目的、特徵以及優點’係藉由以下所述之 擊較佳實施形態及隨附之以下圖式予以闡明。 針對本發日狀半導體零狀製造方法及半導财件進行 說明。 . 树日狀半導體零件之製造方法，其賴為，係含有：準 備於功此面上形成有突起電極的半導體晶圓 ，與於一面侧上 有焊錫凸塊並於其 、为—面侧上具有電極墊之電路基板的步 置且^步驟係'於上述半導體晶圓與上述電路基板之間設 /、知劑錄的_層，纽將上述具有_活性之樹脂 098116117 201005814 層穿破而使上述突起電極與上述焊錫凸塊抵接之方式，使上 述半導體晶圓與上述電路基板進行接合而得到接合體；於上 述接合體之上述電極墊上賦予焊錫材的步驟；與將上述接合 體切斷而得到複數之半導體零件的步驟。 如此，於半導體用晶圓層級與電路基板進行—次積層後， 藉由切割處理等，可效率良好地生產複數之半導體零件。 以下，針對本發明之半導體零件製造方法的較佳實施形 態，根據圖式進行詳細說明。 圖1係表示於半導體晶圓之功能面上形成有突起電極之 狀態的剖面圖。 如圖1所示，準備在半導體用晶圓丨之功能面u侧上形 成有複數之突起電極12的半導體用晶圓i。 突起電極12可舉例如金凸塊、於凸塊表面鍍鎳·金並進 而實施焊錫鍍敷的銅凸塊或銅柱、焊錫凸塊等。此等之中， 較佳為可使前端尖銳的金凸塊。藉此，可提升接合性。 此種突起電極12彼此間的間距（中心間距離）目前大多設 定為50〜300#m左右，但並不限定於此，亦可對應至更狹 窄的間距（以下，在未特別明示之下，「〜」表示包含上限值 與下限值。） 另外，如圖2所示，準備於一面侧上具有焊錫凸塊2ι、 於另一面侧上具有電極塾22的電路基板2。 作為電路基板2並無特別限定，可使用剛性電路美板了 098116117 0 201005814 撓性電路基板之任—種，但由狹小間距下之通孔(via)形成或 經濟性的觀點而言’較佳為使用可撓性電路基板。 . 作為電路基板2之一例，係如圖2所示，在支撐基材23 之通孔内形成焊錫凸塊21。於此支撐基材23上形成佈線圖 案24。又，支撐基材23之一面係由抗焊劑25所覆蓋。 電極塾22由於成為對母板或模組基板等之輸出入端子， 故例如電極墊22彼此的間距目前大多設定為〇.3〜〇 8mm， ❹但並不限疋於此，亦可對應至更狹窄的間距。 尚且，由抑制金屬擴散·金屬化合物生成的觀點而言，相 較於將電極墊22之銅剝離，實施了鍍鎳/金者為更佳。 於此，作為電路基板2之一例子，針對形成了開口部3〇 之電路基板2參照圖7進行說明。 圖7⑷表示半導體晶圓1之功能面11的佈局。圖7(b)係 表示電路基板2之接合部26(功能面）的佈局。功能面 ❹佈局與接合部26之佈局係設為相同配置圖案。作為配置圖 案’並無特別限定，但設為矩陣狀。於功能面U上形成有 複數之突起電極(未圖示）。另一方面，於接合部加之一面 侧上形成複數之焊錫凸塊(未圖示），在另一面側上形成複數 之電極塾(未圖示）。 此知’如圖7(c)(d)所示，以包圍電路基板2之接合部％ 的方式形成開口部3G。圖7⑷中，係在接合部26的四邊分 別形成開口部30。亦即’對接合部％之上下左右的邊呈略 098116117 201005814 平行地形成4個開π部3G。又’圖7(d)中，係對接合部％ 之上下邊略平行地形成2個開口部3〇。此開口部％係自電 路基板2表面貫通至背面。 如此，於電路基板2上，較佳係形成有在將半導體用晶圓 1與電路基板2進行接合時，可使具有焊劑活性的樹脂層U 渗出的開口部3_ 7(e).藉此，在將半導體用晶… 與電路基板2進行接合之熱壓黏時，可誘導具有過剩的谭劑 活性的樹脂層成分滲出至開口部⑽的位置。藉此，可防 ^突起電極&與焊錫凸塊21之位置偏移，-次性地得到 良好之連接性(可得顺制了污㈣半導體零件）。 合佳係形成—^ 行的複數開口部3〇’係形成為對接合 料邊方向呈平行。因此，在切割時，可肖咖π部30。 亦ρ，不用擦拭自開口部30所灸 ❹ 層Β成分即可予以去除。因此H具有焊齡性的樹脂 即，可提升料财件之生纽。魏㈣的步驟數。亦 另外’亦可對接合部26之一 3〇。又，如圖7(c)所示，較佳^連續形成複數之開口部 開口部30。相對於^接合部=個接合部26形成4個 使具有焊劑活性的樹月旨層U 開口部3G較多者’可 可更加減低突起電極12與焊踢=良好地滲出。藉此’ 尚且’開口部3〇之形狀並無特=的位置偏離。 一7 、、、寺別限定。例如圖7⑷⑷所 201005814 示，自相對於基板呈垂直線方向所觀看的開口部3〇之形 狀，可設為長方形。又，較佳為保持一定強度的圓形形狀， 開口面積若為可使樹脂充分流入的面積即可。 再者，切割方向之開口部3〇的寬度，可與接合部26之邊 的長度相同’亦可小於該邊之長度。又，相對於切割方向呈 正交方向的開口部30之寬度，並無特別限定，例如可設為 與切割寬度幾乎相同。藉此，進行切割時，可去除具有焊劑 鮝活性的樹脂層13成分。因此’可提升半導體零件之生產性。 在使用上述可撓性電路基板時，基板平面方向上的熱膨脹 係數並無特別限定，較佳為1〇[ppm/K]以下，特佳為 4〜8[PPm/K]。若熱膨脹係數為上述範圍内，一次連接性特别 優越。 在使用上述難電路基_，基板平面方向上的熱膨 數並無特別限定，較佳為15[ppm/K]以下，特佳: © 5〜l2[PPm/K]。若熱膨脹係數為上述範圍内，一次連接為 別優越。 哧特 ¥外’如圖6所示’電路基板2亦可為在切體5上 著複狀(單獨的）電路絲51者。觀，可將電路基/ 與半導體晶® 1接合於既定位置，其後藉由切割處理 到複數之半導體零件。 "得 其次，以覆蓋半導體用晶圓i之複數突起電極的方 塗佈具有焊劑活性的樹脂層13，進行層合等 式 } 精此， 098116117 11 201005814 不需焊劑處理而可將突起電極12與焊錫凸塊21進行谭接。 尚且’本實施形態中’係在半導體用晶圓1侧配置了具有 焊劑活性的樹脂層13之薄膜’但並不限定於此，亦可在電 路基板2(電路基板2之焊錫凸塊21側的面）上配置具有焊劑 活性的樹脂層13之薄膜。亦即，依在半導體用晶圓】與電 路基板2之任一面上貼附具有焊劑活性的樹脂層13之薄膜 的狀態進行配置。 為了得到此種具有焊劑活性的樹脂層13,可舉例如將糊 狀之樹脂組成物進行塗佈、乾燥而獲得的方法，將薄膜狀之 樹脂組成物進行層合的方法等。 構成具有焊劑活性的樹脂層13之樹脂組成物，係例如^ 有可進行交聯反應之樹脂與具有焊劑活性之化合物。 作為上述可進行交聯反狀樹脂，除了例如環㈣脂1 環丁烧樹脂、苯賴脂、（甲基）丙烯酸g旨樹脂、不飽和聚酉丨 樹脂、二稀丙基醜酸酯樹脂、順丁稀二酿亞胺樹脂等之分卖 為所謂熱硬化性樹脂者之外，具有竣基 :熱可雜旨等亦可作為本發明之可進== 月曰。此4之中，適合使用硬化性盘保在 耐濕性、耐藥品性優越的縣樹;Γ硬化物之耐熱性 室:==:，可使用於室溫下呈固形的環氧樹脂及 至 >亚下呈液狀的裱氧樹脂的任一種。 固形的環讓她 098116117
12 201005814 提高樹脂層13的溶融行為的設計自由度。 :為室溫下呈固形的環氧樹脂’並無特別限可舉例如 • A型環氧樹脂、雙酚s型環氧樹脂等之雙 •之甲_駿清漆型環氧樹脂等 β漆生環减脂，縣丙基胺型 ㈣環氧樹脂、3官能環氧樹脂、4宫能環二 能環氧樹脂等。更且體 .^ 曰專多Β 較佳係含有室溫下;固二3官：:呈固形的環氧樹脂 漆切援减樹脂與甲紛紛搭清 性。環氧㈣。藉此，可提升所得之半導體零件的耐濕可靠 例=上述室7呈液狀的環氧樹脂，並無特別限定，可舉 1酚A型環氧樹腊、雙㈣型環氧樹 化型環氧樹脂、4_第：丁其舰〜 ⑽A核虱 樹脂等。第一丁基鄰本二朌型環氧樹脂、蔡型環氧 φ 物聯反應之樹脂的含量’較佳為上述樹脂組成 物正體之25重量％以上且75重量％以下，特佳為衫重量％ =上且7〇重量％以下。若含量為上述範圍内，則可得到良 好之硬化性，並可設計良好之炫融行為。 全2具有_活性的化合物，若為具有藉由加鮮而去除 右屬氧化膜之效果者聽特觀定。可為例如活性松香、且 絲之有機化合物㈣有_、胺、雜、醇、邮 專之本身具有烊劑活性’或具有促進谭劑活性之作用的化合 098116117 201005814 物。 具有至少一 狀或固 價羧酸 作為此具有㈣活性的化合物，更具體可舉例如於分 個以上羧基及/或酚⑽基的化合物其可為液 例如，作為具有焊劑活性的化合物，可舉例如1
、作為上述含錢基之化合物，可舉例如㈣族_ 式酸肝、芳香族酸酐、脂肪族紐、芳香族幾酸等。^ 有驗f生經基之焊劑化合物，可舉例如苯紛類。 '' 作為上述雜族_，可舉例如__、聚己二酸軒. 聚壬二酸針、聚癸二酸酐等。 作為上述脂環式酸軒，可舉例如曱基四氫酞酸酐、甲基六 氫酞酸酐、曱基降稻烯二酸酐(methyl HIMIC Anhydride)、 六氫酞酸酐、四氫酞酸酐、三烷基四氫酞酸酐、曱基環己稀 二羧酸酐等。
作為上述芳香族酸酐，可舉例如酞酸酐、偏苯三甲酸酐、 均苯三甲酸酐、二苯基酮四羧酸酐、乙二醇雙偏苯三曱酸 酯、甘油參偏笨三曱酸酯等。 作為上述脂肪族羧酸，可舉例如下式（1)所示之化合物等。 [化1] H00C-(CH2)n-C00H (1) (η為〇以上且2〇以下之整數。） 上式（1)所示之化合物，係由焊劑活性、接黏時之除氣 098116117 14 201005814 (outgas)及接黏劑層2之硬化後彈性係數或玻璃轉移溫度的 平衡而言，上式（1)中之η較佳為3以上且1〇以下，特佳為 4以上且8以下。藉由將η設為上述下限值以上，則可抑制 硬化後之彈性係數增加，並可提升與被接黏物間之接黏性。 又，藉由將η設為上述上限值以下，則可抑制樹脂層13的 彈性係數降低，並可更加提升半導體零件之連接可靠性。 作為上述式（1)所示之化合物，可舉例如之戊二酸 參（H〇〇C-(CH2)3-COOH)、n=4 之己二酸(h〇〇C-(CH2)4-COOH) 、n=5 之庚二酸（HOOC-(CH2)5-COOH)、n=8 之癸二酸 (HOOC-(CH2)8_COOH)及 n=l〇 之 HOOC-(CH2)10-COOH-等。 作為其他之脂肪族叛酸，可舉例如曱酸、乙酸、丙酸、丁 酸、戊酸、三曱基乙酸、己酸、辛酸、月桂酸、十四酸、軟 脂酸、硬脂酸、丙烯酸、曱基丙稀酸、丁稀酸、油酸、反丁 烯二酸、順丁烯二酸、草酸、丙二酸、號珀酸等。 ® 作為上述芳香族叛酸，可舉例如苯甲酸、狄酸、間苯二甲 酸、對^—曱酸、半蜜胤酸(Hemimellitic acid)、偏苯三甲酸、 苯三甲酸、1，2,3,5-苯四曱酸、1，2,3,4-苯四甲酸、苯均四酸、 苯六甲酸、甲苯酸、茬甲酸、2,3-二曱苯曱酸、3,5-二曱苯 曱酸、2,3,4-三甲苯甲酸、曱苯曱酸、桂皮酸、水揚酸、2,3-二羥基苯甲酸、2,4-二羥基苯曱酸、龍膽酸p，5-二羥基苯甲 酸）、2,6-二羥基苯甲酸、3,5-二羥基苯甲酸、沒食子酸(3,4,5-二經基本甲酸）、1，4-二經基-2-萘甲酸、3,5-二經基-2-萘甲酸 098116117 15 201005814 等之萘甲酸衍生物；盼敌琳(phenol phthalin);雙酴酸等。 作為上述具有酚性羥基之化合物，可舉例如苯酚、鄰曱 酚、2,6-二甲酚、對甲酚、間曱酚、鄰乙基酚、2,4·二曱酚、 2,5-二甲酚、間乙基酚、2,3-二曱酚、菜酚、3,5-二曱酚、對 第二丁基盼、鄰苯二紛、對第三戊基酴、間苯二齡、對辛基 酚、對苯基酚、雙酚A、雙酚F、雙酚AF、聯苯、二烯丙 基雙酚F、二烯丙基雙酚A、參酚、肆酚等之含有酚性羥基 之單體類，苯酚酚醛清漆樹脂、鄰甲酚酚醛清漆樹脂、雙酚 F酚醛清漆樹脂、雙酚A酚醛清漆樹脂等。 另外，此種具有焊劑活性的化合物，較佳係可藉由與如環 氧樹脂般之可進行交聯反狀樹脂的反應而被3維地導入 的具有焊劑活㈣硬化劑。藉此，除了可省略焊劑活性後之 洗淨步驟’亦可更加提升可靠性。 作為此具有焊劑活性的硬化劑，可舉例如下述化合物：於 卜分子中具有至少2個可加成至環氧樹脂等之可進行交聯反 應之樹脂上__基，並於丨分子中具有至少丨個對金屬 氧化膜顯示焊劑作用、並直接鍵結於芳香族的。具體可 舉例如：2,3-二經基苯曱酸、2,4_二經基苯曱酸、龍膽酸ο 二經基苯曱酸）、2,6·二錄苯甲酸、3,4_二錄苯曱酸、沒 食子酸(3,4,5_三經基苯曱酸)等之苯甲酸衍生物；μ二經基 -2-萘甲酸、二經基_2_萘甲酸、3,7_二經基_2_萘甲酸等： 萘甲酸衍生物；酚酞啉；以及雙盼酸等。 098116117 16 201005814 此等具有焊劑活性的化合物可單獨使用，亦可組合使用 種以上。 ° ±述具有焊劑活性之化合物的含量並無_限定，較佳為 • 上述樹脂組成物整體之1重量％以上、30重量％以下，特佳 為5重量％以上、25重量％以下。若含量未滿上述下限值， 則有焊劑活性之效果不足的情形，若超過上述上限值，則有 未與可進行交聯反應之樹脂反應的具有焊劑活性之化合物 參發生殘留的情形，而成為遷移的原因。又，若含量為上述範 圍内’則可使銅絲面之氧化膜還原而得到強度較大的良好 接合。 上述樹脂組成物並無特別限定，亦可含有硬化劑。 作為上述硬化劑，可舉例如酚類、胺類、硫醇類。於使用 環氧樹脂作為可進行交聯反應之樹脂時，由可得到與該環氧 樹脂之良好反應性、硬化時之低尺寸變化及硬化後之適當物 ❹性(例如耐熱性、耐濕性等）而言，適合使用酚類。 作為上述酚類，並無特別限定，在考慮到接黏劑層2之硬 化後物性時，較佳為2官能以上。可舉例如雙紛a、四曱基 雙酚A、二烯丙基雙酚A、聯笨、雙酚F、二烯丙基雙酚f、 參酚、肆酚、苯酚酚醛清漆類、甲酚酚醛清漆類等，但考慮 到熔融黏度與環氧樹脂之反應性及硬化後之物性時，可適合 使用本紛紛搭清漆類及甲酴齡駿清漆類。 於使用笨紛酴酸:清漆類作為上述硬化劑時，其含量並無特 098116117 17 201005814 別限定，由可確實地使上射骑交聯反叙_進行硬化 的觀點而言，較佳為上述樹脂組成物整體的5重量％以上 特佳10重量％以上。又’若殘留有未與環氧樹脂反應之苯 酚酚醛清漆類’則成為遷移的原因。因此，為了不殘留殘渣， 上述含量較佳為上述樹脂組成物整體之30重量％以下、 佳25重量％以下。 、 在可進行交觀叙細旨為縣_時，麵祕清封
脂之含量可依相對環氧樹脂之當量比予以規定。具體而言 苯盼祕清漆類相對於環氧樹脂之當量比，較佳為〇.5 J」 且1_2以下’特佳為〇.6以上且u以下最佳為〇 7以」 乂下藉由將上述祕祕清漆樹脂相對 脂之當量_紅述下限值以上，則可確保硬化後之耐秀 I"生耐濕!生’而藉由將該當量比設為上限值以下則可減伯
硬化後之未㈣—較紅殘留麵祕清漆樹脂& 量’使耐遷移性良好。 作為其他硬_，可糊㈣錢合物、磷化合物等。 作為上述米唾化合物，可舉例如味嗤、甲基味唾、2计 一烷基咪唑、2·十七烷基咪唑、U-二曱基咪唑、2_乙基_4 J基，坐、2·苯基•坐、2-苯基-苯基-4-甲基•坐、Η基_2 苯基米嗤1-节基甲基咪嗤、i•氰乙基曱基味唑、1 氰乙基'乙基_4·甲基味嗅、1-氰乙基-2-十-烷基味唾、 氛土 2苯基米坐、K氰乙基·2-十-烧基°米嗤鑕偏笨三甲 098116117 18 201005814 酸3曰1_氰乙基苯基咪唑鏽偏苯三甲酸酯、2,4-二胺基 6 [2甲基糸唾基(ι’)]_乙基-s_三啡、2,4二胺基十— 烧基米n坐基(1 )]_乙基_s·三讲、2,4-二胺基_6_[2，·乙基-4-甲基 • °米嗤基(1’)]_乙基'S-三讲、2,4_二胺基-6-[2，-曱基味嗤基(1，)]- 乙基-s-二啩異三聚氰酸加成物、2_苯基咪唑異三聚氰酸加成 物、2-曱基咪唑異三聚氰酸加成物、2_苯基-苯基_4,5二羥基 -曱基味唾、2·苯基_4_甲基_5_綠甲基咪嗤等。 參 Λ種咪嗤化合物中，較佳為使用炫點15〇。(：以上之咪嗤化 口物藉此’可容易達到樹脂層13之硬化與焊劑機能的兼 顧。亦即，若咪哇化合物之溶點過低，則焊锡凸塊21之氧 化膜被去除，在焊錫凸塊21肖突起電極12進行金屬接合前 樹脂層13即硬化，使連接變得不穩^，可抑制樹脂層13 保存性降低的情形。 作為熔點1耽以上之味唾化合物，可舉例如2苯基輕基 ❹°米°坐、2_苯基冰甲基經基哺唾、2-笨基冰甲基輕等。又， 米坐化〇物之溶點之上限並無特別限制，例如可配合樹脂層 13之接黏溫度而予以適當設定。 纟使㈣魏合物作為上述硬化劑時，其含量並無特別限 疋，較佳為上述樹脂組成物整體之0.005重量％以上且1〇 重量％以下，特佳為〇.〇1重量％以上且5重量％以下。藉由 將咪口坐化合物之含量設為上述下限值以上，則可使作為可進 行交聯反應之樹脂之硬化觸媒的功能更有效地發揮，可提升 098116117 19 201005814 樹脂層13之硬化性。又，藉由將咪唑化合物之調配比設為 上述上限值以下，則在焊錫熔融的溫度下，樹脂之熔融黏度 不致過高，可得到良好之烊接構造。又，可更加提升樹脂層 13之保存性。 作為上述鱗化合物，可舉例如三苯基膦；四取代鱗與多官 能苯盼化合物的分子性化合物；四取代鱗與質子供給體與三 烧氧基矽烷化合物的分子性化合物等。此等之中，特佳係樹 脂層13之速硬化性、半導體元件對鋁墊之腐蝕性、再者樹 脂層13之保存性更優越的四取代鱗與多官能苯酚化合物的 分子性化合物、及四取代鱗與質子供給體與三烷氧基矽烷化 合物的分子性化合物。 上述樹脂組成物並無特別限定，亦可含有與上述可進行交 聯反應之樹脂不同的薄膜形成性樹脂。 作為上述薄膜形成性樹脂，可使用例如苯氧基樹脂、聚醋 樹脂、聚胺基曱酸g旨樹脂、聚輕胺樹脂、錢烧改質聚酿 亞胺樹脂、聚丁二烯、聚丙稀、苯乙稀_丁二烯_笨乙稀丘聚 物、苯乙烯_乙烯-丁婦_笨乙烯共聚物、聚祕樹脂、聚㈣ 丁_脂、聚乙烯縮_脂、丁基橡膠、氣丁二烯樹脂、聚 醯胺樹脂、丙烯腈-丁二烯共聚物、丙婦腈_丁二烯·丙稀酸共 聚物、丙烯腈-丁二烯-苯乙烯共聚物、聚醋酸乙烯酯、尼龍、 丙稀酸橡膠等。此等可單獨使用，亦可組人使用2 ' 在使用苯氧基樹脂作為薄膜形成性樹脂時，較佳為數平 098116117 20 201005814 均分子量為5_〜15_之苯氧基樹脂。藉由使用此種笨友 基樹脂，可抑制硬化前之樹脂層13之流動性，使 氣 均勻。苯氧基樹脂之骨架可舉例如雙酚A型、 度 土 芰酚F型、 聯苯骨架型等，但並不限定於此等。較佳係飽和吸水率、 1%以下之苯氧基樹脂，其因即使在接合時或焊錫安裴時2 高溫下仍可抑制發泡或剝離等之發生，故較佳。
另外，作為上述薄膜形成性樹脂，在提升接黏性或與其他 樹脂之相溶性的目的下，可使用具有腈基、環氧基、羥美 竣基之樹脂，作為此種樹脂，可使用例如丙婦酸橡膠。 在使用丙烯酸橡膠作為薄膜形成性樹脂時，可提升製作薄 膜狀之樹脂層13時之成膜穩定性。又，可使樹脂層13之彈 性係數降低，減低被接黏物與樹脂層13間之殘留應力，故 可提升對被接黏物之密黏性。 丙烯酸橡膠較佳為含有具有環氧基、羥基、羧基或腈基等 • 之單體單位的（甲基）丙烯酸酯共聚物。藉此，可提升半導體 凡件之背面及半導體元件上之塗敷材等對被黏體的密黏 丨生。此種（甲基）丙烯酸酯共聚物所使用之單體，可舉例如具 有環氧丙基之（甲基）丙烯酸環氧丙酯、具有羥基之（甲基）丙 烯酸酯、具有羧基之（曱基）丙烯酸酯、具有腈基之（甲基）丙 烯腈等。 此等之中’特佳係使用含有具環氧丙基或羧基之單體單位 的（甲基）丙烯酸酯共聚物。藉此，可進一步促進接黏薄膜之 098116117 21 201005814 硬化，進一步可提升對被黏體之接黏性。 於使用含有频基之單體單位之（甲基）丙烯賴共聚物 時，具有絲之單體單位於共聚物中之含量，係由更加提升 對被黏體之接黏性的觀點而言，為例如（曱基）丙烯酸醋共聚 物整體之0.5重量％以上、較佳1重量％以上。又，具有羧 基之單體單位之含置，係由更進一步提升樹脂層13之保存 性的觀點而言，為例如（曱基）丙烯酸酯共聚物整體之1〇重 量％以下、較佳5重量％以下。 (曱基）丙烯酸酯共聚物之重量平均分子量，係設為例如 1，000以上且100萬以下，較佳為3,〇〇〇以上且90萬以下。 藉由設為上述範圍，可更加提升樹脂層13之成膜性，同時 可確保接黏性之流動性。 (曱基）丙烯酸酯共聚物之重量平均分子量，可藉由例如凝 膠滲透色層分析法(GPC)進行測定，作為測定之條件例，例 如可藉由東梭(股)製高速GPC SC-8020裝置，管柱可使用 TSK-GEL GMHXL-L、溫度40。〇、溶媒四氫呋喃。 (曱基）丙烯酸酯共聚物之玻璃轉移溫度，係由抑制接黏薄 膜之黏著過強並更加提升作業性的觀點而言，例如為〇。(：以 上、較佳5°C以上。又，（曱基）丙烯酸酯共聚物之玻璃轉移 溫度，係由更加提升低溫下之接黏性的觀點而言，例如為 30°C以下、較佳20°C以下。 (曱基）丙烯酸酯共聚物之玻璃轉移溫度’例如可使用熱機 098116117 22 201005814 械特性分析裴置(Seiko Instruments(股)製，TMA/SS6100)， 以一定負重（l〇mN)自-65°C依升溫速度5。(：/分鐘使溫度上 升’同時藉由拉伸時之變極點進行測定。 薄膜形成性樹脂之含量並無特別限定，較佳係設為上述樹 脂組成物整體之5重量％以上、50重量％以下。在依上述範 圍内調配薄卿成性樹脂時，可抑制成膜性之降低，並抑制 樹月曰層13硬化後之彈性係數之增加，故可更加提升與被接
黏物的綠性。又，藉由^為上述範_，則可抑制樹脂層 13之溶融黏度之增加。 %付别要求耐熱性或尺寸穩定性 時*較佳係進—步含有無機填充劑。作為此種無機填充劑， ㈣、燒絲土、未燒成黏土、雲母、玻璃等之石夕 :二氧化紹、熔融二氧切(炫融球狀二氧切、 ^”外結晶二氧切等之粉末等的氧化物， 氫氧化^碳酸鹽’氫_呂、氫氧化鎂、 酸鹽或亞购，侧㈣賴之硫 日日一氧化矽等之二氧仆&i 熔融二氧化矽。 匕夕畚末，特佳為球狀 則可提升使樹脂組 藉由於樹脂组成物中含有無機填充劑， 098116117 23 201005814 成物硬化後之耐熱性、耐祕1度等，並可提升樹脂層 13之剝離性。又’無機填充劑之形狀並無特別岐，較佳 為正球狀，藉此，尤其可提供適合之樹脂組成物作為益異向 性的樹脂層13。 …'、 另外，無機填充劑之平均粒徑並無特別蚊，較佳為0.5 …下，特佳為0.01〜0.45//m，最佳為〇 〇ι〜〇 3…若 此平均粒徑過小，财無機填充劑容易凝集之結果，而有強 度降低的情形’另-方面若過大，則樹脂層13之透明度降 低’半導體元件表面之位置對合記號的辨別變得困難，而有 半導體凡件與基板之位置對合變得困難的情形。 於此，無機填充劑之含量並無制限定，較佳為上述樹脂 組成物整體之Η)〜60重量％、特佳2G〜5G重量％。若無機填 充劑之含量過小’财使耐熱性、耐濕性、強度等提升之效 果降低的情形’另-方面若過大，财透明性降低或樹脂 層13之黏性降低的情形。 另外，上述樹脂組成物亦可再含有矽烷偶合劑。藉由作成 含有矽烷偶合劑之構成，則可更加提高樹脂層13對被接黏 物之孩、黏性。作為矽烷偶合劑，可舉例如環氧基矽烷偶合 劑、含芳香族之胺基矽烷偶合劑等。此等可單獨使用，亦可 組合使用2種以上。矽烷偶合劑之含量並無特別限定，較佳 為上述樹脂組成物整體之0.01〜5重量〇/〇。 上述樹脂組成物中，亦可含有上述以外之成分。例如為了 098116117 24 201005814 樹脂之相溶性、敎性、作業性等之各種特性提升，亦可適 當添加各種添加劑。
將設有此具有焊劑活性的樹脂層13之半導體用晶圓U 電路基板2 ’以使突起電極u與焊錫凸塊u相抵接之方= 經由具有焊劑活性的樹脂層13進行接合叫到接合體3(圖 句。此時1於半導體晶圓1與電路基板2之_具有焊劑
活性的樹脂層13 ’被突起修12所穿破而與焊錫凸塊^ 相抵接。如此，在使突起電極12與焊錫凸塊21被具有焊劑 活性的樹㈣13崎蓋陳態下，突起電極12抵接於焊錫 凸塊21。 柯 作為接合條件並無特別限定，較佳係以25〜i75t，依每！ 單位〇.5〜5kgf使突起電極12與焊錫凸塊2ι位置對合又並予 以假壓黏(連接)後，再為了得到焊錫部之接合(真連接）而進 行200〜30(TCxl〜60秒、較佳每i單位〇 。特佳為 〜23(rCx5〜18()秒。接合溫度係依存於焊錫凸塊之焊錫種 類的溶點，負重係依存於進行接合之端子數。 於此’由於經由具有烊劑活性的樹脂層13使突起電極12 與烊錫㈣21 it行接合’故可在抑制焊踢⑽^表面氧化 (去除表面氧化膜)之下進行焊接。 較佳係將該接合體3進-步藉由加熱使構成具有焊劑活 性的樹脂層13之樹脂硬化。 此時之加熱條件並無特別限定’較佳為12〇〜2〇〇t：x 098116117 25 201005814 30〜180分鐘，藉此，使具有焊劑活性的樹脂層13硬化，而 將突起電極12與焊錫凸塊21之間密封，可提升連接可靠性。 尚且，本實施形態中，在得到接合體13後’雖使具有焊 劑活性的樹脂層13硬化，但並不限定於此，亦可為使具有 焊劑活性的樹脂層13硬化後再得到接合體13。 其次，對接合體3之電極墊22賦予焊錫材。 作為焊錫材，較佳為例如圖5所示之焊球4。藉此，對其 他基板等之2次安裝變得容易。 、 作為賦予烊球4之方法，可舉例如錢敷法、糊膏印刷法、 球載搭法。 接著，將具有焊球4之接合體3進行切割，得到複數之半 導體零件3卜在將接合體3進行切割時，在與賦予了接合 體3之焊球4之面呈相反侧的面賦予切割片並進行切割。 尚且’在進行切割前，較佳係在接合體3之賦予了科4 之侧的面上先配置具有焊劑活性的樹脂層。藉此，使2次安 裝時之焊接容易，並可省略焊劑處理’提升生產性或溫度循 環性、落下試驗等之二次安裝後之可靠性。 於此’所使用之切割片可直接使用市售物。 藉由經由上述步驟，可於半導體晶圓層級與電路基板進行 接合’並藉由將其進行切割而可提供生產性優越的半導體零 件之製造方法。亦即，根據此製造方法，可減少整體的步驟 數0 098116117 26 201005814 (實施例) 以下’根據實施例及比較例詳細說明本發明，但本發明並 非限定於其。 (實施例1) « 1. 具有突起電極之半導體用晶圓之製造 藉由金線板接合法，於半導體用晶圓（6吋徑，25〇“ m厚） 上之70/zm間距之AL墊上，以凸塊焊接器形成金柱凸塊。 參金柱凸塊之形狀係凸塊徑30〜35#m、凸塊底座為15~2〇// m、凸塊高40〜45//m,前端未實施均平(leveling)等之處理 而殘留銳角之狀態。 2. 具有焊錫凸塊之可撓性電路基板的製造 於銅4厚12#m、以作為支撐基材之聚醯亞胺（宇部日東 公司製BE25〇8DFF，線膨脹係數Hppm/K，厚25㈣所構 成的銅羯板上’藉雷射加工形成3〇/zm徑之通孔，於去膠 ❹誠理後，實施焊錫(Sn_Ag)鑛敷，於通孔内形成焊锡凸塊。 保護凸塊面後，於鋼側貼附光阻，藉由進行曝光、顯影、 _、光阻剝離而形成佈線圖案。其後，印刷•塗佈抗焊劑， 進行麟、曝光、_、後烤，藉此成為健㈣於外部連 接端子之。®(land)的構造，於台面部實施賴/金而製作具 有焊錫凸塊的可撓性電路其 吻暴板。最後以金屬模具實施包含開 口部之外形加工。 3. 具有焊劑活性的樹脂層的調製 098116117 27 201005814 將作為可進行交聯反應之樹脂的環氧樹脂(NC6000、環氧 當量200g/eq、日本化藥公司製)47.0重量％、作為薄膜形成 性樹脂之丙烯酸酯共聚物（丙烯酸丁酯-丙稀酸乙醋_丙稀腈_ 丙稀酸-丙烯酸經基乙酯共聚物，Nagase ChemteX公司製， SG-708-6，重量平均分子量：500,000)14,6重量％與丙烯酸 樹脂（丙烯酸-苯乙烯共聚物，重量平均分子量：5,500， UC-3900，東亞合成公司製）14.6重量％、作為硬化劑之固形 盼樹脂(PR-53647，羥基當量104g/OH基，住友Bakelite公 司製）10.3重量％、作為硬化促進劑之β米唾化合物 (2Ρ4ΜΗΖ ’四國化成工業公司製)0.1重量％、作為焊劑化合 物之酚酞啉12.9重量％、作為偶合劑之丙基三曱氧基石夕烷 (KBM303，信越化學工業公司製)0.4重量％、作為均平劑之 丙烯酸聚合物(BYK-361N，BYK Japan公司製)0.1重量％溶 解於曱基乙基酮中，得到樹脂固形份40%之樹脂清漆。 將所得之清漆塗佈成聚酯片材狀，適當設定為使上述溶劑 揮發的溫度，使清漆乾燥，藉此得到具有焊劑活性的樹脂層 的片材。 4.接合體之製造 於上述半導體用晶圓之功能面側上，以真空薄膜層合機 (「MVLP-500/600-2A」，名機製作所製）貼附具有焊劑活性 的樹脂層的片材。藉真空薄膜層合機貼附具有焊劑活性的樹 脂層的片材時之處理條件，係設為120°C、〇.8MPa、30秒。 098116117 28 201005814 貼附於半導體用晶圓上之具有焊劑活性之樹脂層之片材的 厚度為30/z m。 • 其次，關於具有突起電極之半導體用晶圓、與具有焊錫凸 塊之可撓性電路基板的接合，係將焊錫凸塊與金柱凸塊的上 下位置對合’以壓製裝置(VHM758)進行假熱壓黏。假熱壓 黏條件設為150°C、l.〇MPa。再一邊將壓力慢慢放開（〇 1MPa 以下）、一邊加熱至250。(：，藉此使晶圓上之金柱凸塊與經 φ 熔融之可撓性電路基板之焊錫凸塊進行金屬形成。再藉由進 行180C、120分鐘的追加加熱，而得到經電性連接的接合 體（附有可撓性電路基板之晶圓）。 5.半導體零件之製造 於所得之半導體用晶圓上搭載焊球’剝離市售切割片之保 護膜，將接黏薄膜面貼附於6吋、25〇//m晶圓厚之背面， 使用切割鋸(DISCO製)依軸心旋轉數3〇,〇〇〇rpm、切斷速度 ❹5 0 mm/ s e c將接合體切割（切斷）為晶片尺寸，得到複數之半導 體零件。 (實施例2) . 除了使用以下者作為電路基板以外，其餘與實施例丨同樣 地進行。 使用應用了線膨脹係數2.5ppm/K之聚醯亞胺（東洋紡製） 者作為具有焊錫凸塊之可撓性電路基板的支撐基材。 (實施例3) 098116117 29 201005814 除了使用圖6所示之於支樓體5上貼 51而成者作騎祕板峰路基板 又，此時係使用不具開口部者。 β羡地進行。 (實施例4) 除了使用以下者作為電路基板以外， 地進彳f。 其餘與貫施例1同樣 螭光澤之銅箱積層板 線膨脹係數9ppm/K) 應用銅箔厚12#m、30/zm厚帶破 (住友 Bakelite 公司製 ELC-4785GS， 作為電路基板。 (實施例5) 以外，其餘與 除了使用以下者作為具有焊劑活性之樹脂層 實施例1同樣地進行。 將作為可進行交聯反應之樹脂的環氣樹脂(NC6〇〇〇、環氧 當量200g/eq、曰本化藥公司製)47.4重量％、作為薄膜形成 性樹脂之丙婦酸酯共聚物（丙烯酸丁酯-丙烯酸乙酯_丙稀腈_ 丙烯酸-丙烯酸羥基乙酯共聚物，Nagase ChemteX公司製， SG-708-6，重量平均分子量：500,000)14.6重量％與丙烯酸 樹脂（丙烯酸•笨乙烯共聚物，重量平均分子量：5,500 ’ UC-3900，東亞合成公司製）14.6重量0/〇、作為硬化劑之固形 酚樹脂(PR-53647，羥基當量l〇4g/〇H基’住友Bakelite公 司製）16.4重量％、作為硬化促進劑之咪"坐化合物 (2P4MHZ，四國化成工業公司製)〇·1重量％、作為焊劑化合 098116117 30 201005814 物之癸二酸6.4重量％、作為偶合劑之丙基三曱氧基矽燒 (KBM303，信越化學工業公司製）〇·4重量％、作為均平劑之 丙烯酸聚合物(ΒΥΚ-361Ν，BYK Japan公司製)0.1重量％溶 解於甲基乙基酮中，得到樹脂固形份40%之樹脂清漆。將所 得之清漆塗佈成聚酯片材狀，適當設定為使上述溶劑揮發的 /m度’使β漆乾燥，藉此得到具有焊劑活性之樹脂層的片材。 (比較例1) ❹ 製作倒裝晶片CSP(晶片尺寸封裝)作為比較例。
於半導體用晶圓（尺寸：6吋、厚350/zm)上藉由旋塗器塗 佈感光性聚醯亞胺(住友Bakelite公司製CRC-8300)，對AL 墊進仃曝光•顯影•硬化使AL墊開口，於開口部實施鎳之 無電解鍍敷’接著實施金之無電解鍍敷’搭麟球，切割成 晶片尺寸。 接著在與了焊球者之相同位置上具有端子的剛性基 ❹板—電子公司製)上，使用倒裝晶片接合器，將上述搭載 了焊球之晶片與絲_子接合。又，·基板表侧之端子 上係藉印刷形成預焊，於接合前藉助焊劑去除上下焊錫的焊 錫氧化膜。 接合後，洗淨助焊劑，使毛細管填充谬㈣mary underfill) (住友B臟e公㈣CRp_4l5雜人至接合部之間隙中， = = 成用於安裝至安裝基板的區 51路連接表側端子與背側端子。於ϋ域端子上 098116117 201005814 搭載焊球，而得到㈣晶片型之CSP。 (比較例2) 製作再佈線型之晶圓層級CSP作為比較例。
於半導體用晶圓（尺寸·· 6吋、厚450//m)上藉由旋塗器塗 佈感光性聚醯亞胺(住友Bakelite公司製CRC_83〇〇)，對AL 墊進行曝光•顯影•硬化使AL墊開口，藉鈦濺鍍形成厚5〇〇人 之鈦膜，再藉銅濺鍍重疊3,000Λ之銅膜後，塗佈光阻劑， 對用於自晶片之端子拉回至安裝基板之外部連接區域端子 的電路圖案進行曝光、顯影處理後，僅對電路圖案部分實施 鑛銅。其後，剝離光阻’對銅膜及鈦膜進行蝕刻處理而於晶 圓上形成銅之電路圖案。再於其上塗佈感光性聚醯亞胺(住 友Bakelite公司製CRC-3900)作為絕緣層，對台面圖案進行 曝光•顯影•硬化而形成外部端子，對台面部分進行鍵鎳、 接著鍍金後’於台面部分搭載焊球，切割成晶片尺寸而得到 半導體零件。 針對各實施例及比較例所得之半導體零件，進行以下評 價。將評價項目與内容一起表示。所得結果示於表1。 1.生產性 以比較例1之生產工時作為基準（100)，比較其他實施例 及比較例之生產性。各符號係如下述。 ◎:以比較例1之生產工時作為基準（100)，生產工時為 40以上且未滿60。 098116117 32 201005814 〇：以比較例1之生產工時作為基準（100)，生產工時為 60以上且未滿80。 △:以比較例1之生產工時作為基準（1〇〇)，生產工時為 80以上且未滿100。 X :以比較例1之生產工時作為基準（1〇〇)，生產工時為 100以上。 2. 連接可靠性 0 連接可靠性係依將所得之半導體零件於溫度周期試驗後 是否能導通而進行評價。 具體而言，係藉數位萬用表測定半導體元件、基板間之連 接電阻。測定係於製作半導體零件後、與進行〗，〇〇〇周期之 -65C1小時及150°C1小時之溫度周期後之兩者進行。各符 號係如下述。 ◎:於20/20個半導體零件獲得導通。 © 〇：於18〜19/20個半導體零件獲得導通。 △:於16〜17/20個半導體零件獲得導通。 X ·於16以下/20個半導體零件獲得導通。 3. 耐迴焊裂痕性 1 耐迴焊裂痕性係將所得之半導體零件於85。〇、相對濕度 85%之恆溫恆濕槽中進行吸濕處理168小時後，迅速地使用 迴焊裝置進行迴焊處理(Max260度i0sec)，以超音波探傷機 (SAT)確認有無内部剝離。又，處理係根據之標準。 098116117 33 201005814 各符號係如下述。η數設為20。 ◎:處理後，未發生内部剝離 X :處理後，發生内部剝離 [表1 ]
If施例1 實施例2 實施例3 實施例4 實施例5 比較例1 比較例2 生產性 40© 40© 40® 40© 40© 100 80Δ 連接可靠性 Γ 20〇 20〇 190 20〇 20〇 20〇 20〇 耐迴焊裂痕性 ◎ ◎ ◎ ◎ X X 由表1可明確確認到，實施例1〜5之生產性優越。 又’實施例1〜5所得之半導體零件’係連接可靠性及耐迴 焊裂痕性亦優異。 【圖式簡單說明】 圖1係概略表示本發明所使用之半導體用晶圓之一例子 的剖面圖。 圖2係概略表示本發明所使用之電路基板之一例子的剖 面圖。 圖3係概略表示本發明所使用之電路基板之一例子的剖 面圖。 圖4係概略表示將本發明所使用之半導體用晶圓與電路 基板接合所得之接合體之一例子的剖面圖。 圖5係表示於本發明所使用之接合體上賦予了焊錫材之 一例子的剖面圖。 圖6係概略表示本發明所使用之電路基板之一例子的剖 098116117 34 201005814 面圖。 圖7係概略表示本發明所使用之電路基板之一例子的俯 視圖。 【主要元件符號說明】
1 半導體用晶圓 2 電路基板 3 接合體 4 焊球 5 支撐體 11 功能面 12 突起電極 13 樹脂層 21 焊錫凸塊 22 電極墊 23 支撐基材 24 佈線圖案 25 抗焊劑 26 接合部 30 開口部 31 半導體零件 51 電路基板 098116117 35

Claims (1)

  1. 201005814 七、申請專利範圍： 1.一種半導體零件之製造方法，係含有： 準備於功能面上形成有突起電極的半導體晶圓，與於一面 侧上具有焊錫凸塊並於另—面侧上具有電極塾之電路基板 · 的步驟； ， 接口步驟’係於上述半導體晶圓與上述電路基板之間設置 具有焊劑活性的樹脂層，並以將上述具有焊劑活性之樹脂層 穿破而使上述突起電極與上述焊錫凸塊抵接之方式使上述籲 半導體晶®與上述電路基板進行接合而得到接合體； 於上述接合體之上述電極塾上賦予焊錫材的步驟；與 將上述接合體切斷而得到複數之半導體零件的步驟。 2·如申請專利範圍帛i項之半導體零件之製造方法，其 中在上述電路基板上’係在使上述半導體晶圓與上述電路 基板進打接合時，形錢上述具有焊脑㈣獅層渗出的 開口部。 Q 3.如申請專利範圍第丨或2項之半導體零件之製造方法， 其中，上述具有焊劑活性的樹脂層係薄膜； 在上述接合步驟中，以將上述薄膜貼附於上述半導體晶圓 : 之上述功能面的狀態’使上述半導體晶圓與上述f路基㈣ ， 行接合。 4·如申請專利範圍第丨或2項之半導體零件之製造方法， 其中，上述具有焊劑活性的樹脂層係薄膜，· 098116117 36 201005814 在上述接合步驟中，以將上述薄膜貼附於上述電路基板之 具有上述焊錫凸塊之面的狀態，使上述半導體晶圓與上述電 路基板進行接合。 參 •· 5.如申請專利範圍第1或2項之半導體零件之製造方法， 其中’上述電路基板係可撓性電路基板。 6·如申請專利範圍第1或2項之半導體零件之製造方法， 其中’上述電路基板係剛性電路基板。 ❹ 7.如申請專利範圍第5項之半導體零件之製造方法，其 中，上述可撓性電路基板之基板平面方向的熱膨脹係數為 10[ppm/K]以下。 8. 如申請專利範圍第5項之半導體零件之製造方法，其 中，上述可撓性電路基板之基板平面方向的熱膨脹係數為 4[ppm/K]以上。 9. 如申請專利範圍第6項之半導體零件之製造方法，其 ® 中，上述剛性電路基板之基板平面方向的熱膨脹係數為 15[ppm/K]以下。 10_如申請專利範圍第6項之半導體零件之製造方法，其 :中，上述可撓性電路基板之基板平面方向的熱膨脹係數為 « 5[ppm/K]以上。 11.如申請專利範圍第丨或2項之半導體零件之製造方 法，其中，上述電路基板係於支撐體上貼黏著複數之電路基 板。 098116117 37 201005814 12. 如申請專利範圍第1或2項之半導體零件之製造方 法，其中，上述具有焊劑活性的樹脂層係由含有可進行交聯 反應之樹脂與具有焊劑活性之化合物的樹脂組成物所構成。 13. 如申請專利範圍第12項之半導體零件之製造方法，其 中，上述具有焊劑活性的化合物，係具有上述可進行交聯反 應之樹脂之硬化劑的作用。 14. 如申請專利範圍第12項之半導體零件之製造方法，其 中，上述具有焊劑活性的化合物，係於分子中具有至少一個 以上之羧基或酚性羥基。 15. 如申請專利範圍第12項之半導體零件之製造方法，其 中，上述具有焊劑活性的化合物，係下述式（1)所記載者； [化1] HOOC-(CH2)n-COOH (1) (η為0以上且20以下之整數）。 16. 如申請專利範圍第1或2項之半導體零件之製造方 法，其中，在經賦予上述焊錫材之上述電極塾1上，進一步配 置具有焊劑活性的樹脂層。 17. —種半導體零件，係由申請專利範圍第1或2項之半 導體零件之製造方法所製得。 098116117 38
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