CN101868866A - 改良式发光二极管结构 - Google Patents

改良式发光二极管结构 Download PDF

Info

Publication number
CN101868866A
CN101868866A CN200880116982A CN200880116982A CN101868866A CN 101868866 A CN101868866 A CN 101868866A CN 200880116982 A CN200880116982 A CN 200880116982A CN 200880116982 A CN200880116982 A CN 200880116982A CN 101868866 A CN101868866 A CN 101868866A
Authority
CN
China
Prior art keywords
layer
light
specular
active layers
dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200880116982A
Other languages
English (en)
Chinese (zh)
Inventor
葛伦·汉司南
史蒂芬·D·蓝斯特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bridgelux Inc
Original Assignee
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgelux Inc filed Critical Bridgelux Inc
Publication of CN101868866A publication Critical patent/CN101868866A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Landscapes

  • Led Devices (AREA)
CN200880116982A 2007-12-06 2008-11-04 改良式发光二极管结构 Pending CN101868866A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/952,048 2007-12-06
US11/952,048 US8026527B2 (en) 2007-12-06 2007-12-06 LED structure
PCT/US2008/082355 WO2009075968A2 (en) 2007-12-06 2008-11-04 Improved led structure

Publications (1)

Publication Number Publication Date
CN101868866A true CN101868866A (zh) 2010-10-20

Family

ID=40720694

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880116982A Pending CN101868866A (zh) 2007-12-06 2008-11-04 改良式发光二极管结构

Country Status (7)

Country Link
US (2) US8026527B2 (enExample)
EP (1) EP2225780A2 (enExample)
JP (1) JP2011507234A (enExample)
KR (1) KR101552366B1 (enExample)
CN (1) CN101868866A (enExample)
TW (1) TW200926461A (enExample)
WO (1) WO2009075968A2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102694101A (zh) * 2011-03-21 2012-09-26 丰田合成株式会社 Iii族氮化物半导体发光器件
CN108369977A (zh) * 2015-10-01 2018-08-03 克利公司 低光学损失倒装芯片固态照明设备
CN109075227A (zh) * 2016-04-13 2018-12-21 欧司朗光电半导体有限公司 光电子半导体芯片
WO2020097792A1 (zh) * 2018-11-13 2020-05-22 厦门市三安光电科技有限公司 发光二极管

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100891761B1 (ko) 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008051048A1 (de) * 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
KR100992749B1 (ko) * 2009-02-16 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014136B1 (ko) * 2009-02-17 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
TWI424589B (zh) * 2009-08-25 2014-01-21 Taiwan Semiconductor Mfg 發光二極體裝置及其形成方法
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
KR101252032B1 (ko) 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
JP5823674B2 (ja) * 2010-07-30 2015-11-25 株式会社ブリヂストン 共役ジエン化合物と非共役オレフィンとの共重合体
JP5557642B2 (ja) * 2010-07-30 2014-07-23 株式会社ブリヂストン 共役ジエン化合物と非共役オレフィンとの共重合体
TWI446578B (zh) 2010-09-23 2014-07-21 Epistar Corp 發光元件及其製法
KR101103639B1 (ko) * 2010-12-06 2012-01-11 광주과학기술원 분산브라그반사소자를 이용한 자외선 발광다이오드 및 그 제조방법
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
KR101762324B1 (ko) * 2011-01-27 2017-07-27 엘지이노텍 주식회사 발광 소자
US10074778B2 (en) * 2011-03-22 2018-09-11 Seoul Viosys Co., Ltd. Light emitting diode package and method for manufacturing the same
JP5806608B2 (ja) * 2011-12-12 2015-11-10 株式会社東芝 半導体発光装置
US9419182B2 (en) 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
US8963121B2 (en) 2012-12-07 2015-02-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
CN103915530A (zh) * 2013-01-05 2014-07-09 海立尔股份有限公司 高压覆晶led结构及其制造方法
DE102013100470A1 (de) * 2013-01-17 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102013103216A1 (de) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
DE102013105227A1 (de) * 2013-05-22 2014-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips
CN104993031B (zh) * 2015-06-12 2018-03-06 映瑞光电科技(上海)有限公司 高压倒装led芯片及其制造方法
DE102016100317A1 (de) 2016-01-11 2017-07-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
CN113544863B (zh) * 2019-03-12 2025-01-17 索尼集团公司 发光元件及其制造方法
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
JP2022044493A (ja) * 2020-09-07 2022-03-17 日亜化学工業株式会社 発光素子
US11322649B2 (en) * 2020-09-15 2022-05-03 Applied Materials, Inc. Three color light sources integrated on a single wafer

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6420735B2 (en) * 1997-05-07 2002-07-16 Samsung Electronics Co., Ltd. Surface-emitting light-emitting diode
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
KR101127314B1 (ko) * 2003-11-19 2012-03-29 니치아 카가쿠 고교 가부시키가이샤 반도체소자
TWI224877B (en) 2003-12-25 2004-12-01 Super Nova Optoelectronics Cor Gallium nitride series light-emitting diode structure and its manufacturing method
JP4330476B2 (ja) * 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
US7166483B2 (en) * 2004-06-17 2007-01-23 Tekcore Co., Ltd. High brightness light-emitting device and manufacturing process of the light-emitting device
JP3994287B2 (ja) * 2004-07-07 2007-10-17 サンケン電気株式会社 半導体発光素子
KR20070041411A (ko) * 2004-07-12 2007-04-18 로무 가부시키가이샤 반도체 발광 소자
JP4450199B2 (ja) 2004-09-30 2010-04-14 豊田合成株式会社 半導体発光素子
TWI257714B (en) * 2004-10-20 2006-07-01 Arima Optoelectronics Corp Light-emitting device using multilayer composite metal plated layer as flip-chip electrode
JP5030398B2 (ja) * 2005-07-04 2012-09-19 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
CN1921156A (zh) * 2005-08-26 2007-02-28 鸿富锦精密工业（深圳）有限公司 发光二极体光源模组及其制造方法
US20070272930A1 (en) * 2006-05-26 2007-11-29 Huan-Che Tseng Light-emitting diode package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102694101A (zh) * 2011-03-21 2012-09-26 丰田合成株式会社 Iii族氮化物半导体发光器件
CN102694101B (zh) * 2011-03-21 2015-05-13 丰田合成株式会社 Iii族氮化物半导体发光器件
CN108369977A (zh) * 2015-10-01 2018-08-03 克利公司 低光学损失倒装芯片固态照明设备
CN109075227A (zh) * 2016-04-13 2018-12-21 欧司朗光电半导体有限公司 光电子半导体芯片
CN109075227B (zh) * 2016-04-13 2021-12-10 欧司朗光电半导体有限公司 光电子半导体芯片
WO2020097792A1 (zh) * 2018-11-13 2020-05-22 厦门市三安光电科技有限公司 发光二极管

Also Published As

Publication number Publication date
US8026527B2 (en) 2011-09-27
KR20100091207A (ko) 2010-08-18
WO2009075968A3 (en) 2009-08-27
US20110303942A1 (en) 2011-12-15
KR101552366B1 (ko) 2015-09-10
US20090146165A1 (en) 2009-06-11
JP2011507234A (ja) 2011-03-03
WO2009075968A2 (en) 2009-06-18
US8338848B2 (en) 2012-12-25
EP2225780A2 (en) 2010-09-08
TW200926461A (en) 2009-06-16

Similar Documents

Publication Publication Date Title
CN101868866A (zh) 改良式发光二极管结构
KR101202907B1 (ko) 광손실이 적은 발광다이오드용 전극 구조체와 그 형성 방법
US10186644B2 (en) Self-aligned floating mirror for contact vias
TWI616004B (zh) 半導體發光元件
KR101188634B1 (ko) 발광 다이오드 구조체 및 그 제조 방법
EP3007238B1 (en) Semiconductor light-emitting element and semiconductor light-emitting device
KR101226706B1 (ko) 반도체 발광소자
CN108987546A (zh) 发光二极管、发光二极管模块和制造发光二极管的方法
CN110459660A (zh) 一种发光二极管及制作工艺、发光装置
TW201308675A (zh) 具有增強鏡面反射率之發光二極體結構
CN103946994B (zh) 半导体发光器件
CN101840985A (zh) 具有双反射层的氮化镓基垂直发光二极管及其制备方法
WO2007136391A1 (en) Electrode structures for leds with increased active area
CN106159057B (zh) Led芯片及其制作方法
TW202025514A (zh) 發光二極體及其製作方法
CN115172556A (zh) 一种发光二极管芯片、发光装置及显示装置
KR102562063B1 (ko) 발광 다이오드
KR20110053064A (ko) 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지
KR20110085961A (ko) 분포 브래그 반사기를 갖는 발광 다이오드 칩 및 발광 다이오드 패키지
CN106848006A (zh) 倒装led芯片及其制备方法
CN102522400B (zh) 一种防静电损伤的垂直发光器件及其制造方法
US10396248B2 (en) Semiconductor light emitting diode
CN209626251U (zh) 一种半导体发光元件、封装体和发光装置
KR102673667B1 (ko) 발광 다이오드 칩
CN113644180A (zh) 倒装led芯片及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1143893

Country of ref document: HK

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20101020

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1143893

Country of ref document: HK