TW200926461A - Improved LED structure - Google Patents
Improved LED structure Download PDFInfo
- Publication number
- TW200926461A TW200926461A TW097143203A TW97143203A TW200926461A TW 200926461 A TW200926461 A TW 200926461A TW 097143203 A TW097143203 A TW 097143203A TW 97143203 A TW97143203 A TW 97143203A TW 200926461 A TW200926461 A TW 200926461A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- light
- dielectric
- mirror
- component
- Prior art date
Links
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000002310 reflectometry Methods 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 26
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 93
- 239000002344 surface layer Substances 0.000 claims 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 36
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000003892 spreading Methods 0.000 description 8
- 230000007480 spreading Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 102100026398 Cyclic AMP-responsive element-binding protein 3 Human genes 0.000 description 1
- 101710128029 Cyclic AMP-responsive element-binding protein 3 Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 102000004877 Insulin Human genes 0.000 description 1
- 108090001061 Insulin Proteins 0.000 description 1
- 208000003251 Pruritus Diseases 0.000 description 1
- CQMUOFGWJSNFPX-UHFFFAOYSA-N [O].[Sn].[Sn] Chemical compound [O].[Sn].[Sn] CQMUOFGWJSNFPX-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- HOFIJBMBYYEBNM-UHFFFAOYSA-N copper;oxotin Chemical compound [Cu].[Sn]=O HOFIJBMBYYEBNM-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 208000001130 gallstones Diseases 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229940125396 insulin Drugs 0.000 description 1
- NOESYZHRGYRDHS-UHFFFAOYSA-N insulin Substances N1C(=O)C(NC(=O)C(CCC(N)=O)NC(=O)C(CCC(O)=O)NC(=O)C(C(C)C)NC(=O)C(NC(=O)CN)C(C)CC)CSSCC(C(NC(CO)C(=O)NC(CC(C)C)C(=O)NC(CC=2C=CC(O)=CC=2)C(=O)NC(CCC(N)=O)C(=O)NC(CC(C)C)C(=O)NC(CCC(O)=O)C(=O)NC(CC(N)=O)C(=O)NC(CC=2C=CC(O)=CC=2)C(=O)NC(CSSCC(NC(=O)C(C(C)C)NC(=O)C(CC(C)C)NC(=O)C(CC=2C=CC(O)=CC=2)NC(=O)C(CC(C)C)NC(=O)C(C)NC(=O)C(CCC(O)=O)NC(=O)C(C(C)C)NC(=O)C(CC(C)C)NC(=O)C(CC=2NC=NC=2)NC(=O)C(CO)NC(=O)CNC2=O)C(=O)NCC(=O)NC(CCC(O)=O)C(=O)NC(CCCNC(N)=N)C(=O)NCC(=O)NC(CC=3C=CC=CC=3)C(=O)NC(CC=3C=CC=CC=3)C(=O)NC(CC=3C=CC(O)=CC=3)C(=O)NC(C(C)O)C(=O)N3C(CCC3)C(=O)NC(CCCCN)C(=O)NC(C)C(O)=O)C(=O)NC(CC(N)=O)C(O)=O)=O)NC(=O)C(C(C)CC)NC(=O)C(CO)NC(=O)C(C(C)O)NC(=O)C1CSSCC2NC(=O)C(CC(C)C)NC(=O)C(NC(=O)C(CCC(N)=O)NC(=O)C(CC(N)=O)NC(=O)C(NC(=O)C(N)CC=1C=CC=CC=1)C(C)C)CC1=CN=CN1 NOESYZHRGYRDHS-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/952,048 US8026527B2 (en) | 2007-12-06 | 2007-12-06 | LED structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200926461A true TW200926461A (en) | 2009-06-16 |
Family
ID=40720694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097143203A TW200926461A (en) | 2007-12-06 | 2008-11-07 | Improved LED structure |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8026527B2 (enExample) |
| EP (1) | EP2225780A2 (enExample) |
| JP (1) | JP2011507234A (enExample) |
| KR (1) | KR101552366B1 (enExample) |
| CN (1) | CN101868866A (enExample) |
| TW (1) | TW200926461A (enExample) |
| WO (1) | WO2009075968A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI424589B (zh) * | 2009-08-25 | 2014-01-21 | Taiwan Semiconductor Mfg | 發光二極體裝置及其形成方法 |
| US9231024B2 (en) | 2010-09-23 | 2016-01-05 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
| TWI803968B (zh) * | 2020-09-15 | 2023-06-01 | 美商應用材料股份有限公司 | 整合在單一晶圓上之三色光源 |
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| KR100891761B1 (ko) * | 2007-10-19 | 2009-04-07 | 삼성전기주식회사 | 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지 |
| DE102008024517A1 (de) * | 2007-12-27 | 2009-07-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers |
| DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
| KR100992749B1 (ko) * | 2009-02-16 | 2010-11-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| KR101014136B1 (ko) * | 2009-02-17 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
| DE102009019161A1 (de) * | 2009-04-28 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
| KR101072193B1 (ko) * | 2010-04-01 | 2011-10-10 | 엘지이노텍 주식회사 | 발광소자, 발광소자 제조방법, 및 발광소자 패키지 |
| JP5414627B2 (ja) | 2010-06-07 | 2014-02-12 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
| KR101252032B1 (ko) | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
| KR101735670B1 (ko) * | 2010-07-13 | 2017-05-15 | 엘지이노텍 주식회사 | 발광 소자 |
| US8217488B2 (en) * | 2010-07-19 | 2012-07-10 | Walsin Lihwa Corporation | GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping |
| JP5557642B2 (ja) * | 2010-07-30 | 2014-07-23 | 株式会社ブリヂストン | 共役ジエン化合物と非共役オレフィンとの共重合体 |
| JP5823674B2 (ja) * | 2010-07-30 | 2015-11-25 | 株式会社ブリヂストン | 共役ジエン化合物と非共役オレフィンとの共重合体 |
| KR101103639B1 (ko) * | 2010-12-06 | 2012-01-11 | 광주과학기술원 | 분산브라그반사소자를 이용한 자외선 발광다이오드 및 그 제조방법 |
| JP2012124306A (ja) * | 2010-12-08 | 2012-06-28 | Toyoda Gosei Co Ltd | 半導体発光素子 |
| KR101762324B1 (ko) * | 2011-01-27 | 2017-07-27 | 엘지이노텍 주식회사 | 발광 소자 |
| JP5541260B2 (ja) * | 2011-03-21 | 2014-07-09 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| US10074778B2 (en) * | 2011-03-22 | 2018-09-11 | Seoul Viosys Co., Ltd. | Light emitting diode package and method for manufacturing the same |
| JP5806608B2 (ja) * | 2011-12-12 | 2015-11-10 | 株式会社東芝 | 半導体発光装置 |
| US9419182B2 (en) | 2012-01-05 | 2016-08-16 | Micron Technology, Inc. | Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods |
| US9496458B2 (en) * | 2012-06-08 | 2016-11-15 | Cree, Inc. | Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same |
| US8963121B2 (en) | 2012-12-07 | 2015-02-24 | Micron Technology, Inc. | Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods |
| CN103915530A (zh) * | 2013-01-05 | 2014-07-09 | 海立尔股份有限公司 | 高压覆晶led结构及其制造方法 |
| DE102013100470A1 (de) * | 2013-01-17 | 2014-07-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102013103216A1 (de) * | 2013-03-28 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
| DE102013105227A1 (de) * | 2013-05-22 | 2014-11-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterchips |
| CN104993031B (zh) * | 2015-06-12 | 2018-03-06 | 映瑞光电科技(上海)有限公司 | 高压倒装led芯片及其制造方法 |
| US10991861B2 (en) | 2015-10-01 | 2021-04-27 | Cree, Inc. | Low optical loss flip chip solid state lighting device |
| DE102016100317A1 (de) * | 2016-01-11 | 2017-07-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102016106831A1 (de) * | 2016-04-13 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| US11387389B2 (en) | 2018-01-29 | 2022-07-12 | Creeled, Inc. | Reflective layers for light-emitting diodes |
| US11031527B2 (en) | 2018-01-29 | 2021-06-08 | Creeled, Inc. | Reflective layers for light-emitting diodes |
| US11923481B2 (en) | 2018-01-29 | 2024-03-05 | Creeled, Inc. | Reflective layers for light-emitting diodes |
| EP3882988A4 (en) * | 2018-11-13 | 2022-06-29 | Xiamen San'an Optoelectronics Technology Co., Ltd. | Light-emitting diode |
| US10879441B2 (en) | 2018-12-17 | 2020-12-29 | Cree, Inc. | Interconnects for light emitting diode chips |
| WO2020184148A1 (ja) * | 2019-03-12 | 2020-09-17 | ソニー株式会社 | 発光素子及びその製造方法 |
| US10985294B2 (en) | 2019-03-19 | 2021-04-20 | Creeled, Inc. | Contact structures for light emitting diode chips |
| US11094848B2 (en) | 2019-08-16 | 2021-08-17 | Creeled, Inc. | Light-emitting diode chip structures |
| JP2022044493A (ja) * | 2020-09-07 | 2022-03-17 | 日亜化学工業株式会社 | 発光素子 |
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| US6420735B2 (en) * | 1997-05-07 | 2002-07-16 | Samsung Electronics Co., Ltd. | Surface-emitting light-emitting diode |
| JP2004006498A (ja) * | 2002-05-31 | 2004-01-08 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| TWI220578B (en) * | 2003-09-16 | 2004-08-21 | Opto Tech Corp | Light-emitting device capable of increasing light-emitting active region |
| EP1686629B1 (en) * | 2003-11-19 | 2018-12-26 | Nichia Corporation | Nitride semiconductor light emitting diode and method for manufacturing the same |
| TWI224877B (en) * | 2003-12-25 | 2004-12-01 | Super Nova Optoelectronics Cor | Gallium nitride series light-emitting diode structure and its manufacturing method |
| JP4330476B2 (ja) * | 2004-03-29 | 2009-09-16 | スタンレー電気株式会社 | 半導体発光素子 |
| US7166483B2 (en) * | 2004-06-17 | 2007-01-23 | Tekcore Co., Ltd. | High brightness light-emitting device and manufacturing process of the light-emitting device |
| JP3994287B2 (ja) * | 2004-07-07 | 2007-10-17 | サンケン電気株式会社 | 半導体発光素子 |
| KR20070041411A (ko) * | 2004-07-12 | 2007-04-18 | 로무 가부시키가이샤 | 반도체 발광 소자 |
| JP4450199B2 (ja) | 2004-09-30 | 2010-04-14 | 豊田合成株式会社 | 半導体発光素子 |
| TWI257714B (en) * | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
| JP5030398B2 (ja) * | 2005-07-04 | 2012-09-19 | 昭和電工株式会社 | 窒化ガリウム系化合物半導体発光素子 |
| CN1921156A (zh) * | 2005-08-26 | 2007-02-28 | 鸿富锦精密工业（深圳）有限公司 | 发光二极体光源模组及其制造方法 |
| US20070272930A1 (en) * | 2006-05-26 | 2007-11-29 | Huan-Che Tseng | Light-emitting diode package |
-
2007
- 2007-12-06 US US11/952,048 patent/US8026527B2/en active Active
-
2008
- 2008-11-04 CN CN200880116982A patent/CN101868866A/zh active Pending
- 2008-11-04 WO PCT/US2008/082355 patent/WO2009075968A2/en not_active Ceased
- 2008-11-04 KR KR1020107012090A patent/KR101552366B1/ko not_active Expired - Fee Related
- 2008-11-04 EP EP08859445A patent/EP2225780A2/en not_active Withdrawn
- 2008-11-04 JP JP2010536956A patent/JP2011507234A/ja not_active Withdrawn
- 2008-11-07 TW TW097143203A patent/TW200926461A/zh unknown
-
2011
- 2011-08-22 US US13/214,725 patent/US8338848B2/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI424589B (zh) * | 2009-08-25 | 2014-01-21 | Taiwan Semiconductor Mfg | 發光二極體裝置及其形成方法 |
| US9231024B2 (en) | 2010-09-23 | 2016-01-05 | Epistar Corporation | Light-emitting element and the manufacturing method thereof |
| TWI803968B (zh) * | 2020-09-15 | 2023-06-01 | 美商應用材料股份有限公司 | 整合在單一晶圓上之三色光源 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2225780A2 (en) | 2010-09-08 |
| KR101552366B1 (ko) | 2015-09-10 |
| JP2011507234A (ja) | 2011-03-03 |
| US20110303942A1 (en) | 2011-12-15 |
| US8026527B2 (en) | 2011-09-27 |
| WO2009075968A3 (en) | 2009-08-27 |
| CN101868866A (zh) | 2010-10-20 |
| KR20100091207A (ko) | 2010-08-18 |
| WO2009075968A2 (en) | 2009-06-18 |
| US8338848B2 (en) | 2012-12-25 |
| US20090146165A1 (en) | 2009-06-11 |
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