KR101552366B1 - 개선된 ｌｅｄ 구조 - Google Patents

개선된 ｌｅｄ 구조 Download PDF

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Publication number
KR101552366B1
KR101552366B1 KR1020107012090A KR20107012090A KR101552366B1 KR 101552366 B1 KR101552366 B1 KR 101552366B1 KR 1020107012090 A KR1020107012090 A KR 1020107012090A KR 20107012090 A KR20107012090 A KR 20107012090A KR 101552366 B1 KR101552366 B1 KR 101552366B1
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South Korea
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layer
dielectric
dielectric material
mirror
overlying
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Expired - Fee Related
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Korean (ko)
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KR20100091207A (ko
Inventor
굴람 하스나인
스티븐 디 레스터
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가부시끼가이샤 도시바
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
KR1020107012090A 2007-12-06 2008-11-04 개선된 ｌｅｄ 구조 Expired - Fee Related KR101552366B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/952,048 US8026527B2 (en) 2007-12-06 2007-12-06 LED structure
US11/952,048 2007-12-06

Publications (2)

Publication Number Publication Date
KR20100091207A KR20100091207A (ko) 2010-08-18
KR101552366B1 true KR101552366B1 (ko) 2015-09-10

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KR1020107012090A Expired - Fee Related KR101552366B1 (ko) 2007-12-06 2008-11-04 개선된 ｌｅｄ 구조

Country Status (7)

Country Link
US (2) US8026527B2 (enExample)
EP (1) EP2225780A2 (enExample)
JP (1) JP2011507234A (enExample)
KR (1) KR101552366B1 (enExample)
CN (1) CN101868866A (enExample)
TW (1) TW200926461A (enExample)
WO (1) WO2009075968A2 (enExample)

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DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008051048A1 (de) * 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
KR100992749B1 (ko) * 2009-02-16 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014136B1 (ko) * 2009-02-17 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
CN105226151A (zh) * 2009-08-25 2016-01-06 元芯光电股份有限公司 发光二极管装置及其形成方法
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
JP5414627B2 (ja) 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
KR101252032B1 (ko) 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
JP5557642B2 (ja) * 2010-07-30 2014-07-23 株式会社ブリヂストン 共役ジエン化合物と非共役オレフィンとの共重合体
JP5823674B2 (ja) * 2010-07-30 2015-11-25 株式会社ブリヂストン 共役ジエン化合物と非共役オレフィンとの共重合体
TWI446578B (zh) 2010-09-23 2014-07-21 Epistar Corp 發光元件及其製法
KR101103639B1 (ko) * 2010-12-06 2012-01-11 광주과학기술원 분산브라그반사소자를 이용한 자외선 발광다이오드 및 그 제조방법
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
KR101762324B1 (ko) * 2011-01-27 2017-07-27 엘지이노텍 주식회사 발광 소자
JP5541260B2 (ja) * 2011-03-21 2014-07-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
US10074778B2 (en) * 2011-03-22 2018-09-11 Seoul Viosys Co., Ltd. Light emitting diode package and method for manufacturing the same
JP5806608B2 (ja) * 2011-12-12 2015-11-10 株式会社東芝 半導体発光装置
US9419182B2 (en) 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
US8963121B2 (en) 2012-12-07 2015-02-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
CN103915530A (zh) * 2013-01-05 2014-07-09 海立尔股份有限公司 高压覆晶led结构及其制造方法
DE102013100470A1 (de) * 2013-01-17 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102013103216A1 (de) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
DE102013105227A1 (de) * 2013-05-22 2014-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips
CN104993031B (zh) * 2015-06-12 2018-03-06 映瑞光电科技(上海)有限公司 高压倒装led芯片及其制造方法
US10991861B2 (en) 2015-10-01 2021-04-27 Cree, Inc. Low optical loss flip chip solid state lighting device
DE102016100317A1 (de) * 2016-01-11 2017-07-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102016106831A1 (de) * 2016-04-13 2017-10-19 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
EP3882988A4 (en) * 2018-11-13 2022-06-29 Xiamen San'an Optoelectronics Technology Co., Ltd. Light-emitting diode
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
WO2020184148A1 (ja) * 2019-03-12 2020-09-17 ソニー株式会社 発光素子及びその製造方法
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
JP2022044493A (ja) * 2020-09-07 2022-03-17 日亜化学工業株式会社 発光素子
US11322649B2 (en) * 2020-09-15 2022-05-03 Applied Materials, Inc. Three color light sources integrated on a single wafer

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US20050056855A1 (en) * 2003-09-16 2005-03-17 Ming-Der Lin Light-emitting device with enlarged active light-emitting region
US20050279990A1 (en) * 2004-06-17 2005-12-22 Yu-Chuan Liu High brightness light-emitting device and manufacturing process of the light-emitting device
US20060081869A1 (en) * 2004-10-20 2006-04-20 Chi-Wei Lu Flip-chip electrode light-emitting element formed by multilayer coatings
JP2006108161A (ja) * 2004-09-30 2006-04-20 Toyoda Gosei Co Ltd 半導体発光素子

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JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP1686629B1 (en) * 2003-11-19 2018-12-26 Nichia Corporation Nitride semiconductor light emitting diode and method for manufacturing the same
TWI224877B (en) * 2003-12-25 2004-12-01 Super Nova Optoelectronics Cor Gallium nitride series light-emitting diode structure and its manufacturing method
JP4330476B2 (ja) * 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
JP3994287B2 (ja) * 2004-07-07 2007-10-17 サンケン電気株式会社 半導体発光素子
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JP5030398B2 (ja) * 2005-07-04 2012-09-19 昭和電工株式会社 窒化ガリウム系化合物半導体発光素子
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US20050279990A1 (en) * 2004-06-17 2005-12-22 Yu-Chuan Liu High brightness light-emitting device and manufacturing process of the light-emitting device
JP2006108161A (ja) * 2004-09-30 2006-04-20 Toyoda Gosei Co Ltd 半導体発光素子
US20060081869A1 (en) * 2004-10-20 2006-04-20 Chi-Wei Lu Flip-chip electrode light-emitting element formed by multilayer coatings

Also Published As

Publication number Publication date
EP2225780A2 (en) 2010-09-08
JP2011507234A (ja) 2011-03-03
TW200926461A (en) 2009-06-16
US20110303942A1 (en) 2011-12-15
US8026527B2 (en) 2011-09-27
WO2009075968A3 (en) 2009-08-27
CN101868866A (zh) 2010-10-20
KR20100091207A (ko) 2010-08-18
WO2009075968A2 (en) 2009-06-18
US8338848B2 (en) 2012-12-25
US20090146165A1 (en) 2009-06-11

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