CN101841666B - 图像传感器和摄像设备 - Google Patents

图像传感器和摄像设备 Download PDF

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Publication number
CN101841666B
CN101841666B CN2010101322080A CN201010132208A CN101841666B CN 101841666 B CN101841666 B CN 101841666B CN 2010101322080 A CN2010101322080 A CN 2010101322080A CN 201010132208 A CN201010132208 A CN 201010132208A CN 101841666 B CN101841666 B CN 101841666B
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China
Prior art keywords
pixel
area
light
shielding
pixels
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Expired - Fee Related
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CN2010101322080A
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English (en)
Chinese (zh)
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CN101841666A (zh
Inventor
柳井敏和
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Canon Inc
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Canon Inc
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Publication of CN101841666A publication Critical patent/CN101841666A/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/667—Camera operation mode switching, e.g. between still and video, sport and normal or high- and low-resolution modes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H04N25/633—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current by using optical black pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN2010101322080A 2009-03-16 2010-03-16 图像传感器和摄像设备 Expired - Fee Related CN101841666B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-063238 2009-03-16
JP2009063238A JP5511203B2 (ja) 2009-03-16 2009-03-16 撮像素子及び撮像装置

Publications (2)

Publication Number Publication Date
CN101841666A CN101841666A (zh) 2010-09-22
CN101841666B true CN101841666B (zh) 2013-08-28

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CN2010101322080A Expired - Fee Related CN101841666B (zh) 2009-03-16 2010-03-16 图像传感器和摄像设备

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US (1) US20100231761A1 (enExample)
JP (1) JP5511203B2 (enExample)
CN (1) CN101841666B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5631153B2 (ja) * 2010-10-21 2014-11-26 キヤノン株式会社 画像処理装置、制御方法、及びプログラム
JP5632703B2 (ja) 2010-10-21 2014-11-26 キヤノン株式会社 画像処理装置、制御方法、及びプログラム
JP6150457B2 (ja) * 2011-05-12 2017-06-21 キヤノン株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像システム
FR2984606B1 (fr) * 2011-12-14 2015-06-26 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection avec suivi du comportement des photodetecteurs
JP6214132B2 (ja) 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
US9918017B2 (en) 2012-09-04 2018-03-13 Duelight Llc Image sensor apparatus and method for obtaining multiple exposures with zero interframe time
JP6174902B2 (ja) * 2012-09-14 2017-08-02 キヤノン株式会社 固体撮像装置及びカメラ
JP6271926B2 (ja) * 2013-09-18 2018-01-31 キヤノン株式会社 撮像装置、その制御方法、及びプログラム
JP6324184B2 (ja) * 2014-04-18 2018-05-16 キヤノン株式会社 光電変換装置、撮像システム、および光電変換装置の駆動方法
KR102366416B1 (ko) 2014-08-11 2022-02-23 삼성전자주식회사 Cmos 이미지 센서
US12401911B2 (en) 2014-11-07 2025-08-26 Duelight Llc Systems and methods for generating a high-dynamic range (HDR) pixel stream
US12401912B2 (en) 2014-11-17 2025-08-26 Duelight Llc System and method for generating a digital image
US12445736B2 (en) 2015-05-01 2025-10-14 Duelight Llc Systems and methods for generating a digital image
JP6492991B2 (ja) * 2015-06-08 2019-04-03 株式会社リコー 固体撮像装置
JP2017163010A (ja) 2016-03-10 2017-09-14 ソニー株式会社 撮像装置、電子機器
JP6815777B2 (ja) * 2016-07-25 2021-01-20 キヤノン株式会社 撮像装置及び撮像装置の制御方法
JP6857061B2 (ja) * 2017-03-22 2021-04-14 キヤノン株式会社 撮像素子および撮像装置
JP6746547B2 (ja) * 2017-09-12 2020-08-26 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP7159568B2 (ja) * 2018-02-23 2022-10-25 株式会社リコー 光電変換素子、画像読取装置、および画像形成装置
CN114725131A (zh) * 2020-12-22 2022-07-08 格科微电子（上海）有限公司 图像传感器的黑电平校准方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3142239B2 (ja) * 1996-06-11 2001-03-07 キヤノン株式会社 固体撮像装置
GB2318473B (en) * 1996-10-17 2000-11-29 Sony Corp Solid state imaging device,signal processing method and camera
JP3870137B2 (ja) * 2001-08-02 2007-01-17 キヤノン株式会社 固体撮像装置及び固体撮像システム
JP4132850B2 (ja) * 2002-02-06 2008-08-13 富士通株式会社 Ｃｍｏｓイメージセンサおよびその制御方法
JP4251811B2 (ja) * 2002-02-07 2009-04-08 富士通マイクロエレクトロニクス株式会社 相関二重サンプリング回路とこの相関二重サンプリング回路を備えたｃｍｏｓイメージセンサ
JP4341297B2 (ja) * 2003-05-23 2009-10-07 株式会社ニコン 信号処理装置、および電子カメラ
JP4274533B2 (ja) * 2003-07-16 2009-06-10 キヤノン株式会社 固体撮像装置及びその駆動方法
JP4517660B2 (ja) * 2004-02-09 2010-08-04 ソニー株式会社 固体撮像装置、画像入力装置および固体撮像素子の駆動方法
JP4396425B2 (ja) * 2004-07-07 2010-01-13 ソニー株式会社 固体撮像装置及び信号処理方法
JP2006147816A (ja) * 2004-11-19 2006-06-08 Sony Corp 物理量分布検知装置および物理情報取得装置
JP4425809B2 (ja) * 2005-02-03 2010-03-03 富士通マイクロエレクトロニクス株式会社 撮像装置
JP4687155B2 (ja) * 2005-03-09 2011-05-25 ソニー株式会社 固体撮像装置およびその駆動方法
JP2006253316A (ja) * 2005-03-09 2006-09-21 Sony Corp 固体撮像装置
JP2007081453A (ja) * 2005-09-09 2007-03-29 Sony Corp 撮像装置及び信号処理方法並びにプログラム
EP1949455A1 (en) * 2005-11-18 2008-07-30 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device
JP4827508B2 (ja) * 2005-12-02 2011-11-30 キヤノン株式会社 撮像システム
JP4479736B2 (ja) * 2007-03-02 2010-06-09 ソニー株式会社 撮像装置およびカメラ
JP4619375B2 (ja) * 2007-02-21 2011-01-26 ソニー株式会社 固体撮像装置および撮像装置
JP4971834B2 (ja) * 2007-03-01 2012-07-11 キヤノン株式会社 撮像装置及び撮像システム
JP2008301030A (ja) * 2007-05-30 2008-12-11 Olympus Corp 固体撮像装置
JP5215681B2 (ja) * 2008-01-28 2013-06-19 キヤノン株式会社 撮像装置及び撮像システム
JP5322816B2 (ja) * 2009-07-15 2013-10-23 キヤノン株式会社 撮像装置およびその制御方法

Also Published As

Publication number Publication date
CN101841666A (zh) 2010-09-22
JP2010219234A (ja) 2010-09-30
US20100231761A1 (en) 2010-09-16
JP5511203B2 (ja) 2014-06-04

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