FR2984606B1 - Matrice de detection avec suivi du comportement des photodetecteurs - Google Patents

Matrice de detection avec suivi du comportement des photodetecteurs

Info

Publication number
FR2984606B1
FR2984606B1 FR1103837A FR1103837A FR2984606B1 FR 2984606 B1 FR2984606 B1 FR 2984606B1 FR 1103837 A FR1103837 A FR 1103837A FR 1103837 A FR1103837 A FR 1103837A FR 2984606 B1 FR2984606 B1 FR 2984606B1
Authority
FR
France
Prior art keywords
photodetectors
behavior
follow
detection matrix
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1103837A
Other languages
English (en)
Other versions
FR2984606A1 (fr
Inventor
Michel Zecri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lynred SAS
Original Assignee
Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS filed Critical Societe Francaise de Detecteurs Infrarouges SOFRADIR SAS
Priority to FR1103837A priority Critical patent/FR2984606B1/fr
Priority to PCT/FR2012/000512 priority patent/WO2013088005A1/fr
Publication of FR2984606A1 publication Critical patent/FR2984606A1/fr
Application granted granted Critical
Publication of FR2984606B1 publication Critical patent/FR2984606B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
FR1103837A 2011-12-14 2011-12-14 Matrice de detection avec suivi du comportement des photodetecteurs Active FR2984606B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1103837A FR2984606B1 (fr) 2011-12-14 2011-12-14 Matrice de detection avec suivi du comportement des photodetecteurs
PCT/FR2012/000512 WO2013088005A1 (fr) 2011-12-14 2012-12-10 Matrice de détection avec suivi du comportement des photodétecteurs

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1103837A FR2984606B1 (fr) 2011-12-14 2011-12-14 Matrice de detection avec suivi du comportement des photodetecteurs

Publications (2)

Publication Number Publication Date
FR2984606A1 FR2984606A1 (fr) 2013-06-21
FR2984606B1 true FR2984606B1 (fr) 2015-06-26

Family

ID=47628292

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1103837A Active FR2984606B1 (fr) 2011-12-14 2011-12-14 Matrice de detection avec suivi du comportement des photodetecteurs

Country Status (2)

Country Link
FR (1) FR2984606B1 (fr)
WO (1) WO2013088005A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3031623B1 (fr) * 2015-01-09 2018-02-16 New Imaging Technologies Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature
FR3037205B1 (fr) * 2015-06-04 2018-07-06 New Imaging Technologies Capteur optique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7436038B2 (en) * 2002-02-05 2008-10-14 E-Phocus, Inc Visible/near infrared image sensor array
US7830412B2 (en) * 2005-08-22 2010-11-09 Aptina Imaging Corporation Method and apparatus for shielding correction pixels from spurious charges in an imager
JP4619375B2 (ja) * 2007-02-21 2011-01-26 ソニー株式会社 固体撮像装置および撮像装置
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP5511203B2 (ja) * 2009-03-16 2014-06-04 キヤノン株式会社 撮像素子及び撮像装置
JP4779054B1 (ja) * 2010-03-31 2011-09-21 富士フイルム株式会社 固体撮像素子及び撮像装置

Also Published As

Publication number Publication date
WO2013088005A1 (fr) 2013-06-20
FR2984606A1 (fr) 2013-06-21

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