FR3031623B1 - Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature - Google Patents

Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature Download PDF

Info

Publication number
FR3031623B1
FR3031623B1 FR1550177A FR1550177A FR3031623B1 FR 3031623 B1 FR3031623 B1 FR 3031623B1 FR 1550177 A FR1550177 A FR 1550177A FR 1550177 A FR1550177 A FR 1550177A FR 3031623 B1 FR3031623 B1 FR 3031623B1
Authority
FR
France
Prior art keywords
temperature
operating range
response matrix
matrix sensor
logarithmic response
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1550177A
Other languages
English (en)
Other versions
FR3031623A1 (fr
Inventor
Yang Ni
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Imaging Technologies SAS
Original Assignee
New Imaging Technologies SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Imaging Technologies SAS filed Critical New Imaging Technologies SAS
Priority to FR1550177A priority Critical patent/FR3031623B1/fr
Priority to US15/542,113 priority patent/US20180278866A1/en
Priority to PCT/EP2016/050027 priority patent/WO2016110466A1/fr
Priority to JP2017536569A priority patent/JP2018504780A/ja
Priority to CN201680005390.9A priority patent/CN107408564A/zh
Publication of FR3031623A1 publication Critical patent/FR3031623A1/fr
Application granted granted Critical
Publication of FR3031623B1 publication Critical patent/FR3031623B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H01L27/14656—Overflow drain structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/72—Combination of two or more compensation controls
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
FR1550177A 2015-01-09 2015-01-09 Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature Expired - Fee Related FR3031623B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1550177A FR3031623B1 (fr) 2015-01-09 2015-01-09 Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature
US15/542,113 US20180278866A1 (en) 2015-01-09 2016-01-04 Matrix sensor with logarithmic response and extended temperature operating range
PCT/EP2016/050027 WO2016110466A1 (fr) 2015-01-09 2016-01-04 Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature
JP2017536569A JP2018504780A (ja) 2015-01-09 2016-01-04 対数応答及び広範な温度作動範囲を有するマトリクスセンサ
CN201680005390.9A CN107408564A (zh) 2015-01-09 2016-01-04 具有对数响应和扩展的温度操作范围的矩阵传感器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1550177A FR3031623B1 (fr) 2015-01-09 2015-01-09 Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature
FR1550177 2015-01-09

Publications (2)

Publication Number Publication Date
FR3031623A1 FR3031623A1 (fr) 2016-07-15
FR3031623B1 true FR3031623B1 (fr) 2018-02-16

Family

ID=53758282

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1550177A Expired - Fee Related FR3031623B1 (fr) 2015-01-09 2015-01-09 Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature

Country Status (5)

Country Link
US (1) US20180278866A1 (fr)
JP (1) JP2018504780A (fr)
CN (1) CN107408564A (fr)
FR (1) FR3031623B1 (fr)
WO (1) WO2016110466A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11211421B2 (en) * 2019-01-23 2021-12-28 Omnivision Technologies, Inc. Sensor comprising gate modulation with inductor to form a resonant circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2367945B (en) * 2000-08-16 2004-10-20 Secr Defence Photodetector circuit
FR2943178B1 (fr) * 2009-03-13 2011-08-26 New Imaging Technologies Sas Capteur matriciel a faible consommation
FR2984606B1 (fr) * 2011-12-14 2015-06-26 Soc Fr Detecteurs Infrarouges Sofradir Matrice de detection avec suivi du comportement des photodetecteurs
US20130258144A1 (en) * 2012-03-28 2013-10-03 Omnivision Technologies, Inc. System, apparatus and method for dark current correction
FR2997596B1 (fr) * 2012-10-26 2015-12-04 New Imaging Technologies Sas Structure d'un pixel actif de type cmos
FR3002691B1 (fr) * 2013-02-28 2016-10-28 E2V Semiconductors Capteur d'image avec grille d'anti-eblouissement

Also Published As

Publication number Publication date
US20180278866A1 (en) 2018-09-27
FR3031623A1 (fr) 2016-07-15
WO2016110466A1 (fr) 2016-07-14
CN107408564A (zh) 2017-11-28
JP2018504780A (ja) 2018-02-15

Similar Documents

Publication Publication Date Title
DK3399355T3 (da) Dobbeltkernefokuseringsbilledsensor, fokuseringskontrol fremgangsmåde dertil og elektronisk anordning
JP2017532602A5 (ja) 画像ベースの測定および散乱測定ベースのオーバーレイ測定のための信号応答計測
KR20180084881A (ko) 시트, 발열체 및 발열 장치
FR3068128B1 (fr) Capteur de temperature d'air
DK3170161T3 (da) Sensoranordning til måling af fugt og tilstedeværelsen af en person på et underlag
FR3002691B1 (fr) Capteur d'image avec grille d'anti-eblouissement
TWI800576B (zh) 偵測裝置及控制系統
DE112018001949T8 (de) Objekterfassungsvorrichtung
FR3028061B1 (fr) Dispositif capteur capacitif comprenant des electrodes ajourees
DK3551293T3 (da) Rnase til forbedret mikrobiel detektion og antimikrobiel følsomhedsbestemmelse
DK3400754T3 (da) Varmeelement til sensorarray
FR3042272B1 (fr) Bolometre a forte sensibilite spectrale.
FR3036939B1 (fr) Autocuiseur pourvu d'une soupape demontable et d'un capteur de temperature
FR3010837B1 (fr) Capteur d'image terahertz
DE112019000883T8 (de) Erfassungsvorrichtung
DE112018005953T8 (de) Multi-paralleles Sensor-Array-System
EP3543667A4 (fr) Élément de détection de température et dispositif de détection de température muni d'un tel élément
DK3257345T3 (da) Rullende landbrugselement
DK3324182T3 (da) Fugtighedsmåleapparat
DK3419578T3 (da) Fækaldetektionssensor.
FR3038712B1 (fr) Capteur de charge
FR3051850B1 (fr) Element thermostatique
FR3026073B1 (fr) Dispositif actuateur/capteur
FR3031623B1 (fr) Capteur matriciel a reponse logarithmique et plage de fonctionnement etendue en temperature
FR3006438B1 (fr) Capteur de temperature

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20160715

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 6

ST Notification of lapse

Effective date: 20210905