CN101835847A - 能形成致密硅质薄膜的含聚硅氮烷的组合物 - Google Patents
能形成致密硅质薄膜的含聚硅氮烷的组合物 Download PDFInfo
- Publication number
- CN101835847A CN101835847A CN200880112428A CN200880112428A CN101835847A CN 101835847 A CN101835847 A CN 101835847A CN 200880112428 A CN200880112428 A CN 200880112428A CN 200880112428 A CN200880112428 A CN 200880112428A CN 101835847 A CN101835847 A CN 101835847A
- Authority
- CN
- China
- Prior art keywords
- polysilazane
- composition
- compound
- film
- siliceous film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920001709 polysilazane Polymers 0.000 title claims abstract description 96
- 239000000203 mixture Substances 0.000 title claims abstract description 82
- 150000001875 compounds Chemical class 0.000 title claims abstract description 47
- -1 amine compound Chemical class 0.000 claims abstract description 42
- 239000002904 solvent Substances 0.000 claims abstract description 33
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 17
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 11
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- 230000009466 transformation Effects 0.000 claims description 4
- 150000002170 ethers Chemical class 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 125000003277 amino group Chemical group 0.000 abstract 2
- 125000001183 hydrocarbyl group Chemical group 0.000 abstract 1
- 239000010408 film Substances 0.000 description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000000126 substance Substances 0.000 description 13
- 239000000377 silicon dioxide Substances 0.000 description 12
- 239000000654 additive Substances 0.000 description 10
- 230000000996 additive effect Effects 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000012298 atmosphere Substances 0.000 description 7
- 238000010304 firing Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 125000000217 alkyl group Chemical class 0.000 description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 6
- AFABGHUZZDYHJO-UHFFFAOYSA-N dimethyl butane Natural products CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000002329 infrared spectrum Methods 0.000 description 6
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 4
- GXDHCNNESPLIKD-UHFFFAOYSA-N 2-methylhexane Natural products CCCCC(C)C GXDHCNNESPLIKD-UHFFFAOYSA-N 0.000 description 4
- SGVYKUFIHHTIFL-UHFFFAOYSA-N 2-methylnonane Chemical compound CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- ZUBZATZOEPUUQF-UHFFFAOYSA-N isononane Chemical compound CCCCCCC(C)C ZUBZATZOEPUUQF-UHFFFAOYSA-N 0.000 description 4
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 4
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 4
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 4
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 3
- 229940087305 limonene Drugs 0.000 description 3
- 235000001510 limonene Nutrition 0.000 description 3
- 125000000962 organic group Chemical group 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000005435 mesosphere Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000037452 priming Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- VIDOPANCAUPXNH-UHFFFAOYSA-N 1,2,3-triethylbenzene Chemical compound CCC1=CC=CC(CC)=C1CC VIDOPANCAUPXNH-UHFFFAOYSA-N 0.000 description 1
- 241000428199 Mustelinae Species 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008072 Si-N-Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- FANANXQSVYPRCQ-UHFFFAOYSA-N azane;silicon Chemical compound N.[Si] FANANXQSVYPRCQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 229920005565 cyclic polymer Polymers 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000002769 thiazolinyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FVCJARXRCUNQQS-UHFFFAOYSA-N trimethylsilyl dihydrogen phosphate Chemical class C[Si](C)(C)OP(O)(O)=O FVCJARXRCUNQQS-UHFFFAOYSA-N 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
硬度(Gpa) | 马氏硬度(Gpa) | 杨氏模量(Gpa) | |
实施例1 | 4.57 | 2.49 | 42.50 |
实施例2 | 4.97 | 2.76 | 47.78 |
实施例12 | 4.69 | 2.87 | 51.75 |
比较例1 | 3.65 | 1.92 | 36.46 |
比较例5 | 3.35 | 1.54 | 23.22 |
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-279374 | 2007-10-26 | ||
JP2007279374A JP5160189B2 (ja) | 2007-10-26 | 2007-10-26 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
PCT/JP2008/069406 WO2009054522A1 (ja) | 2007-10-26 | 2008-10-27 | 緻密なシリカ質膜を得ることができるポリシラザン化合物含有組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101835847A true CN101835847A (zh) | 2010-09-15 |
CN101835847B CN101835847B (zh) | 2012-10-17 |
Family
ID=40579623
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801124288A Active CN101835847B (zh) | 2007-10-26 | 2008-10-27 | 能形成致密硅质薄膜的含聚硅氮烷的组合物 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8263717B2 (zh) |
EP (1) | EP2206746B1 (zh) |
JP (1) | JP5160189B2 (zh) |
KR (1) | KR101500790B1 (zh) |
CN (1) | CN101835847B (zh) |
TW (1) | TWI419922B (zh) |
WO (1) | WO2009054522A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103556199A (zh) * | 2013-08-19 | 2014-02-05 | 青岛聚蚨源机电有限公司 | 一种水晶膜及其镀膜工艺 |
CN104620326A (zh) * | 2012-12-27 | 2015-05-13 | 第一毛织株式会社 | 用于形成氧化硅类绝缘层的组成物、用于形成氧化硅类绝缘层的组成物的制备方法、氧化硅类绝缘层及氧化硅类绝缘层的制造方法 |
CN106249564A (zh) * | 2015-06-12 | 2016-12-21 | 佳能株式会社 | 导电性构件、处理盒和电子照相设备 |
CN108264647A (zh) * | 2018-02-11 | 2018-07-10 | 佛山凯仁精密材料有限公司 | 一种提高硅胶保护膜稳定性的方法及硅胶保护膜 |
CN109072006A (zh) * | 2016-05-02 | 2018-12-21 | Az电子材料(卢森堡)有限公司 | 致密的二氧化硅质膜形成用组合物 |
CN110475822A (zh) * | 2017-04-04 | 2019-11-19 | 默克专利有限公司 | 膜形成组合物以及使用了其的膜形成方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5410207B2 (ja) | 2009-09-04 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜製造方法およびそれに用いるポリシラザン塗膜処理液 |
CN103910885A (zh) * | 2012-12-31 | 2014-07-09 | 第一毛织株式会社 | 制备间隙填充剂的方法、用其制备的间隙填充剂和使用间隙填充剂制造半导体电容器的方法 |
JP2014203858A (ja) * | 2013-04-01 | 2014-10-27 | 株式会社Adeka | ポリシラザンの処理用溶剤およびこれを用いたポリシラザンの処理方法 |
EP3022249A1 (en) | 2013-07-19 | 2016-05-25 | AZ Electronic Materials (Luxembourg) S.à.r.l. | Encapsulation material for light emitting diodes |
CN103589339A (zh) * | 2013-11-13 | 2014-02-19 | 中国科学院化学研究所 | 聚硅氮烷涂覆溶液及制备含金属氧化物-SiO2复合涂层的方法 |
DE102016201258A1 (de) * | 2016-01-28 | 2017-08-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Elektrischer Spannungswandler mit mehreren Speicherdrosseln |
US10316216B2 (en) * | 2016-08-31 | 2019-06-11 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, and silica layer |
JP6926059B2 (ja) * | 2018-12-25 | 2021-08-25 | 信越化学工業株式会社 | 透明塗膜形成用組成物 |
US11724963B2 (en) | 2019-05-01 | 2023-08-15 | Corning Incorporated | Pharmaceutical packages with coatings comprising polysilazane |
KR20220066130A (ko) * | 2019-12-17 | 2022-05-23 | 코니카 미놀타 가부시키가이샤 | 전자 디바이스 밀봉층 형성용의 잉크 조성물, 전자 디바이스 밀봉층 형성 방법 및 전자 디바이스 밀봉층 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2243527A1 (de) | 1972-09-05 | 1974-04-18 | Bayer Ag | Formkoerper aus homogenen mischungen von siliciumcarbid und siliciumnitrid und verfahren zu ihrer herstellung |
JPS60145903A (ja) | 1983-12-29 | 1985-08-01 | Toa Nenryo Kogyo Kk | 無機ポリシラザン及びその合成方法 |
JPS6189230A (ja) | 1984-10-09 | 1986-05-07 | Toa Nenryo Kogyo Kk | ポリオルガノヒドロシラザンの製造方法 |
US4861569A (en) | 1987-08-13 | 1989-08-29 | Petroleum Energy Center | Reformed, inorganic polysilazane and method of producing same |
JP2750405B2 (ja) | 1988-02-08 | 1998-05-13 | 東燃株式会社 | 改質ポリシラザン及びその製造法 |
JP2613787B2 (ja) | 1987-08-13 | 1997-05-28 | 財団法人石油産業活性化センター | 無機シラザン高重合体、その製造方法及びその用途 |
JP2651464B2 (ja) | 1987-08-13 | 1997-09-10 | 財団法人石油産業活性化センター | 改質ポリシラザン、その製造方法及びその用途 |
US4975512A (en) | 1987-08-13 | 1990-12-04 | Petroleum Energy Center | Reformed polysilazane and method of producing same |
JP2750406B2 (ja) | 1988-02-08 | 1998-05-13 | 東燃株式会社 | 改質ポリシラザン及びその製造法 |
JP2700233B2 (ja) | 1988-12-26 | 1998-01-19 | 財団法人石油産業活性化センター | 共重合シラザンおよびその製造法 |
JPH0331326A (ja) | 1989-06-29 | 1991-02-12 | Tonen Corp | ランダム共重合シラザン及びその製法 |
JP3042537B2 (ja) | 1990-06-30 | 2000-05-15 | 東燃株式会社 | 改質ポリシラザン及びその製造方法 |
JP3080104B2 (ja) | 1991-06-20 | 2000-08-21 | 東燃株式会社 | 熱硬化性共重合体及びその製造方法 |
JP3283276B2 (ja) | 1991-12-04 | 2002-05-20 | 東燃ゼネラル石油株式会社 | 改質ポリシラザン及びその製造方法 |
JP3290463B2 (ja) | 1992-05-29 | 2002-06-10 | 東燃ゼネラル石油株式会社 | 熱硬化性ケイ素ホウ素含有共重合体及びその製法 |
EP0611067B1 (en) * | 1993-02-05 | 1999-03-10 | Dow Corning Corporation | Coating electronic substrates with silica derived from silazane polymers |
US5747623A (en) * | 1994-10-14 | 1998-05-05 | Tonen Corporation | Method and composition for forming ceramics and article coated with the ceramics |
JPH08176511A (ja) * | 1994-12-26 | 1996-07-09 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜形成用塗布液の製造法、シリカ系被膜および半導体装置 |
JPH08176512A (ja) * | 1994-12-26 | 1996-07-09 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液、シリカ系被膜形成用塗布液の製造方法、シリカ系被膜及び半導体装置 |
EP0745974B1 (en) * | 1995-05-29 | 2002-08-14 | Fuji Photo Film Co., Ltd. | Method for forming silica protective films |
WO1997003131A1 (fr) * | 1995-07-13 | 1997-01-30 | Tonen Corporation | Composition de formation de ceramiques et procede de production de ceramiques |
JP4070828B2 (ja) * | 1995-07-13 | 2008-04-02 | Azエレクトロニックマテリアルズ株式会社 | シリカ質セラミックス形成用組成物、同セラミックスの形成方法及び同セラミックス膜 |
DE69701594T2 (de) * | 1995-12-28 | 2000-11-02 | Tonen Corp | Verfahren zur herstellung von polysilazan |
EP0825231B1 (en) * | 1996-08-14 | 2000-12-27 | Tokyo Ohka Kogyo Co., Ltd. | Polysilazane-based coating solution for interlayer insulation |
JP4030625B2 (ja) | 1997-08-08 | 2008-01-09 | Azエレクトロニックマテリアルズ株式会社 | アミン残基含有ポリシラザン及びその製造方法 |
JP3904691B2 (ja) | 1997-10-17 | 2007-04-11 | Azエレクトロニックマテリアルズ株式会社 | ポリシラザン含有組成物及びシリカ質膜の形成方法 |
JP2000012536A (ja) * | 1998-06-24 | 2000-01-14 | Tokyo Ohka Kogyo Co Ltd | シリカ被膜形成方法 |
US7053005B2 (en) * | 2000-05-02 | 2006-05-30 | Samsung Electronics Co., Ltd. | Method of forming a silicon oxide layer in a semiconductor manufacturing process |
JP5291275B2 (ja) * | 2000-07-27 | 2013-09-18 | 有限会社コンタミネーション・コントロール・サービス | コーティング膜が施された部材及びコーティング膜の製造方法 |
TWI259844B (en) * | 2001-04-27 | 2006-08-11 | Clariant Int Ltd | Anti-fouling coating solution containing inorganic polysilazane |
US6756469B2 (en) * | 2001-07-18 | 2004-06-29 | Kion Corporation | Polysilazane-modified polyamine hardeners for epoxy resins |
JP3479648B2 (ja) * | 2001-12-27 | 2003-12-15 | クラリアント インターナショナル リミテッド | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
RU2332437C2 (ru) * | 2002-11-01 | 2008-08-27 | Клариант Интернэшнл Лтд | Раствор для нанесения полисилазансодержащего покрытия и его применение |
JP2006059937A (ja) * | 2004-08-18 | 2006-03-02 | Osaka Gas Co Ltd | 絶縁膜用組成物および絶縁膜 |
TW200621918A (en) * | 2004-11-23 | 2006-07-01 | Clariant Int Ltd | Polysilazane-based coating and the use thereof for coating films, especially polymer films |
JP4578993B2 (ja) | 2005-02-02 | 2010-11-10 | Azエレクトロニックマテリアルズ株式会社 | ポリシラザン処理溶剤およびこの溶剤を用いるポリシラザンの処理方法 |
-
2007
- 2007-10-26 JP JP2007279374A patent/JP5160189B2/ja active Active
-
2008
- 2008-10-23 TW TW097140669A patent/TWI419922B/zh active
- 2008-10-27 KR KR1020107011231A patent/KR101500790B1/ko active IP Right Grant
- 2008-10-27 EP EP08840790.3A patent/EP2206746B1/en active Active
- 2008-10-27 CN CN2008801124288A patent/CN101835847B/zh active Active
- 2008-10-27 US US12/739,298 patent/US8263717B2/en active Active
- 2008-10-27 WO PCT/JP2008/069406 patent/WO2009054522A1/ja active Application Filing
-
2012
- 2012-08-03 US US13/566,498 patent/US8557901B2/en active Active
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104620326A (zh) * | 2012-12-27 | 2015-05-13 | 第一毛织株式会社 | 用于形成氧化硅类绝缘层的组成物、用于形成氧化硅类绝缘层的组成物的制备方法、氧化硅类绝缘层及氧化硅类绝缘层的制造方法 |
CN104620326B (zh) * | 2012-12-27 | 2017-04-12 | 第一毛织株式会社 | 用于氧化硅类绝缘层的组成物及其制造方法、氧化硅类绝缘层及其制造方法 |
US9738787B2 (en) | 2012-12-27 | 2017-08-22 | Cheil Industry, Inc. | Composition for forming silica-based insulating layer, method for preparing composition for forming silica-based insulating layer, silica-based insulating layer, and method for manufacturing silica-based insulating layer |
CN103556199A (zh) * | 2013-08-19 | 2014-02-05 | 青岛聚蚨源机电有限公司 | 一种水晶膜及其镀膜工艺 |
CN103556199B (zh) * | 2013-08-19 | 2016-08-10 | 李淑兰 | 一种水晶膜及其镀膜工艺 |
CN106249564A (zh) * | 2015-06-12 | 2016-12-21 | 佳能株式会社 | 导电性构件、处理盒和电子照相设备 |
CN106249564B (zh) * | 2015-06-12 | 2019-08-13 | 佳能株式会社 | 导电性构件、处理盒和电子照相设备 |
CN109072006A (zh) * | 2016-05-02 | 2018-12-21 | Az电子材料(卢森堡)有限公司 | 致密的二氧化硅质膜形成用组合物 |
CN109072006B (zh) * | 2016-05-02 | 2021-07-27 | Az电子材料(卢森堡)有限公司 | 致密的二氧化硅质膜形成用组合物 |
CN110475822A (zh) * | 2017-04-04 | 2019-11-19 | 默克专利有限公司 | 膜形成组合物以及使用了其的膜形成方法 |
CN110475822B (zh) * | 2017-04-04 | 2022-01-04 | 默克专利有限公司 | 膜形成组合物以及使用了其的膜形成方法 |
CN108264647A (zh) * | 2018-02-11 | 2018-07-10 | 佛山凯仁精密材料有限公司 | 一种提高硅胶保护膜稳定性的方法及硅胶保护膜 |
Also Published As
Publication number | Publication date |
---|---|
US8557901B2 (en) | 2013-10-15 |
US20100234540A1 (en) | 2010-09-16 |
KR101500790B1 (ko) | 2015-03-09 |
TW200932811A (en) | 2009-08-01 |
WO2009054522A1 (ja) | 2009-04-30 |
US8263717B2 (en) | 2012-09-11 |
EP2206746B1 (en) | 2017-08-09 |
TWI419922B (zh) | 2013-12-21 |
KR20100100820A (ko) | 2010-09-15 |
EP2206746A4 (en) | 2012-08-08 |
EP2206746A1 (en) | 2010-07-14 |
JP5160189B2 (ja) | 2013-03-13 |
CN101835847B (zh) | 2012-10-17 |
EP2206746A8 (en) | 2010-08-18 |
JP2009111029A (ja) | 2009-05-21 |
US20120296022A1 (en) | 2012-11-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101835847B (zh) | 能形成致密硅质薄膜的含聚硅氮烷的组合物 | |
CN101001930A (zh) | 具有较小平带位移的硅质膜及其制备方法 | |
CN104114483A (zh) | 无机聚硅氮烷树脂 | |
TWI601764B (zh) | 全氫聚矽氮烷、及含其之組成物、以及使用其之矽石質膜之形成方法 | |
KR100914395B1 (ko) | 폴리실라잔, 그 합성 방법, 반도체 소자 제조용 조성물 및 그 반도체 소자 제조용 조성물을 이용한 반도체 소자의 제조 방법 | |
KR101767083B1 (ko) | 개질 수소화 폴리실록사잔을 포함하는 실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법 | |
US20160176718A1 (en) | Composition for forming a silica based layer, silica based layer, and electronic device | |
KR20110012574A (ko) | 아미노실란을 포함하는 폴리실라잔 조성물 | |
KR20200119852A (ko) | 퍼하이드로폴리실라잔 조성물 및 이를 사용하여 산화물 막을 형성하는 방법 | |
JP6571296B2 (ja) | 緻密なシリカ質膜形成用組成物 | |
KR102414008B1 (ko) | 퍼하이드로폴리실라잔 조성물 및 이를 사용하여 질화물 막을 형성하는 방법 | |
KR100285890B1 (ko) | 폴리오르가노실록사잔및그제조방법 | |
CN111944320B (zh) | 用于形成二氧化硅层的组成物、二氧化硅层及电子装置 | |
EP3545019B1 (en) | Siloxazane compound and composition comprising the same, and method for producing siliceous film using the same | |
JPH1160957A (ja) | 前駆体ポリマー組成物及び低誘電率絶縁材料 | |
KR20230056014A (ko) | 폴리실라잔, 이를 포함하는 실리카질 막-형성 조성물, 및 이를 이용한 실리카질 막의 제조 방법 | |
CN101512737A (zh) | 硅质薄膜形成用组合物及应用所述组合物的硅质薄膜的形成方法 | |
JPH0465477A (ja) | シリカ系被膜形成用組成物およびシリカ系被膜の製造法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan Applicant before: AZ electronic materials (Japan) Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: AZ ELECTRONIC MATERIALS (JAPAN) K.K. TO: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: MERCK PATENT GMBH Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. Effective date: 20150413 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150413 Address after: Darmstadt Patentee after: Merck Patent GmbH Address before: Tokyo, Japan Patentee before: AZ Electronic Materials (Japan) K. K. |