CN101814831B - 升压电路 - Google Patents
升压电路 Download PDFInfo
- Publication number
- CN101814831B CN101814831B CN201010119515.5A CN201010119515A CN101814831B CN 101814831 B CN101814831 B CN 101814831B CN 201010119515 A CN201010119515 A CN 201010119515A CN 101814831 B CN101814831 B CN 101814831B
- Authority
- CN
- China
- Prior art keywords
- voltage
- booster
- lead
- out terminal
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009038149A JP5315087B2 (ja) | 2009-02-20 | 2009-02-20 | 昇圧回路 |
JP2009-038149 | 2009-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101814831A CN101814831A (zh) | 2010-08-25 |
CN101814831B true CN101814831B (zh) | 2014-09-17 |
Family
ID=42621978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201010119515.5A Active CN101814831B (zh) | 2009-02-20 | 2010-02-20 | 升压电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8203378B2 (zh) |
JP (1) | JP5315087B2 (zh) |
KR (1) | KR101437201B1 (zh) |
CN (1) | CN101814831B (zh) |
TW (1) | TWI514772B (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1677572A (zh) * | 2004-03-31 | 2005-10-05 | 松下电器产业株式会社 | 非易失性半导体存储器 |
CN101110263A (zh) * | 2006-07-13 | 2008-01-23 | 恩益禧电子股份有限公司 | 半导体存储装置 |
CN101159412A (zh) * | 2006-10-02 | 2008-04-09 | 精工电子有限公司 | 包含升压电路的电子器件 |
CN101227143A (zh) * | 2007-01-17 | 2008-07-23 | 松下电器产业株式会社 | 升压电路 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56125962A (en) * | 1980-03-10 | 1981-10-02 | Canon Inc | Power source voltage detector |
JPS62135230A (ja) * | 1985-12-04 | 1987-06-18 | 日本電気株式会社 | 多出力電源装置 |
KR100264959B1 (ko) * | 1997-04-30 | 2000-10-02 | 윤종용 | 반도체 장치의 고전압발생회로 |
JP3872927B2 (ja) * | 2000-03-22 | 2007-01-24 | 株式会社東芝 | 昇圧回路 |
CN1219352C (zh) * | 2001-12-17 | 2005-09-14 | 松下电器产业株式会社 | 放大电路 |
JP4158856B2 (ja) * | 2003-04-17 | 2008-10-01 | 松下電器産業株式会社 | 昇圧電源回路 |
JP3972916B2 (ja) * | 2004-04-08 | 2007-09-05 | セイコーエプソン株式会社 | 昇圧回路及び半導体集積回路 |
JP4077429B2 (ja) * | 2004-06-09 | 2008-04-16 | 株式会社東芝 | 昇圧回路 |
US7777557B2 (en) * | 2007-01-17 | 2010-08-17 | Panasonic Corporation | Booster circuit |
-
2009
- 2009-02-20 JP JP2009038149A patent/JP5315087B2/ja active Active
-
2010
- 2010-02-06 TW TW099103653A patent/TWI514772B/zh active
- 2010-02-17 US US12/706,992 patent/US8203378B2/en active Active
- 2010-02-18 KR KR1020100014514A patent/KR101437201B1/ko active IP Right Grant
- 2010-02-20 CN CN201010119515.5A patent/CN101814831B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1677572A (zh) * | 2004-03-31 | 2005-10-05 | 松下电器产业株式会社 | 非易失性半导体存储器 |
CN101110263A (zh) * | 2006-07-13 | 2008-01-23 | 恩益禧电子股份有限公司 | 半导体存储装置 |
CN101159412A (zh) * | 2006-10-02 | 2008-04-09 | 精工电子有限公司 | 包含升压电路的电子器件 |
CN101227143A (zh) * | 2007-01-17 | 2008-07-23 | 松下电器产业株式会社 | 升压电路 |
Also Published As
Publication number | Publication date |
---|---|
KR101437201B1 (ko) | 2014-09-03 |
CN101814831A (zh) | 2010-08-25 |
TWI514772B (zh) | 2015-12-21 |
JP5315087B2 (ja) | 2013-10-16 |
KR20100095376A (ko) | 2010-08-30 |
US8203378B2 (en) | 2012-06-19 |
TW201042922A (en) | 2010-12-01 |
JP2010193688A (ja) | 2010-09-02 |
US20100214011A1 (en) | 2010-08-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160322 Address after: Chiba County, Japan Patentee after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Patentee before: Seiko Instruments Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Nagano Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: ABLIC Inc. |