CN101740495B - 柔性半导体装置的制造方法 - Google Patents

柔性半导体装置的制造方法 Download PDF

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Publication number
CN101740495B
CN101740495B CN200910246065.3A CN200910246065A CN101740495B CN 101740495 B CN101740495 B CN 101740495B CN 200910246065 A CN200910246065 A CN 200910246065A CN 101740495 B CN101740495 B CN 101740495B
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layer
peeling
film
manufacturing
semiconductor element
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CN101740495A (zh
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江口晋吾
及川欣聪
片山雅博
中村亚美
门马洋平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
CN200910246065.3A 2008-11-20 2009-11-18 柔性半导体装置的制造方法 Active CN101740495B (zh)

Applications Claiming Priority (2)

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JP2008-296369 2008-11-20
JP2008296369 2008-11-20

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CN101740495A CN101740495A (zh) 2010-06-16
CN101740495B true CN101740495B (zh) 2014-03-12

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US (1) US8058083B2 (https=)
JP (1) JP5586920B2 (https=)
KR (1) KR101581173B1 (https=)
CN (1) CN101740495B (https=)
TW (1) TWI487020B (https=)

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JP6029040B2 (ja) * 2012-05-31 2016-11-24 エルジー・ケム・リミテッド 有機電子装置の製造方法
US8815707B2 (en) * 2012-06-21 2014-08-26 Board of Trustess of the Leland Stanford Junior University Environmentally-assisted technique for transferring devices onto non-conventional substrates
TWI642094B (zh) 2013-08-06 2018-11-21 半導體能源研究所股份有限公司 剝離方法
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
CN104576971A (zh) * 2013-10-24 2015-04-29 胜华科技股份有限公司 可挠式元件及其制造方法
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
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JP6603486B2 (ja) * 2014-06-27 2019-11-06 株式会社半導体エネルギー研究所 発光装置の作製方法
JP6531360B2 (ja) * 2014-08-25 2019-06-19 凸版印刷株式会社 有機ｅｌ発光素子及び有機ｅｌ発光素子の製造方法
CN104992944B (zh) 2015-05-26 2018-09-11 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法
KR102354973B1 (ko) * 2015-06-10 2022-01-25 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
DE102015015452A1 (de) * 2015-12-02 2017-06-08 Forschungszentrum Jülich GmbH Verfahren zum Planarisieren von Nanostrukturen
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
US9870099B2 (en) * 2016-03-29 2018-01-16 Microsoft Technology Licensing, Llc Pressure sensing display
CN109760320B (zh) * 2018-12-05 2022-01-25 歌尔股份有限公司 光学薄膜转移方法和光学薄膜转移装置
CN110234056B (zh) 2019-06-21 2021-01-12 京东方科技集团股份有限公司 换能器及其制备方法、换能装置

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US8058083B2 (en) 2011-11-15
KR101581173B1 (ko) 2015-12-30
JP2010153804A (ja) 2010-07-08
KR20100056983A (ko) 2010-05-28
JP5586920B2 (ja) 2014-09-10
TW201036056A (en) 2010-10-01
TWI487020B (zh) 2015-06-01
US20100124795A1 (en) 2010-05-20
CN101740495A (zh) 2010-06-16

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