TWI487020B - 軟性半導體裝置之製造方法 - Google Patents

軟性半導體裝置之製造方法 Download PDF

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Publication number
TWI487020B
TWI487020B TW098139316A TW98139316A TWI487020B TW I487020 B TWI487020 B TW I487020B TW 098139316 A TW098139316 A TW 098139316A TW 98139316 A TW98139316 A TW 98139316A TW I487020 B TWI487020 B TW I487020B
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Taiwan
Prior art keywords
layer
peeling
film
semiconductor element
forming
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TW098139316A
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English (en)
Chinese (zh)
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TW201036056A (en
Inventor
江口晉吾
及川欣聰
片山雅博
中村亞美
門馬洋平
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半導體能源研究所股份有限公司
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Publication of TW201036056A publication Critical patent/TW201036056A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

Landscapes

  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW098139316A 2008-11-20 2009-11-19 軟性半導體裝置之製造方法 TWI487020B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008296369 2008-11-20

Publications (2)

Publication Number Publication Date
TW201036056A TW201036056A (en) 2010-10-01
TWI487020B true TWI487020B (zh) 2015-06-01

Family

ID=42172349

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098139316A TWI487020B (zh) 2008-11-20 2009-11-19 軟性半導體裝置之製造方法

Country Status (5)

Country Link
US (1) US8058083B2 (https=)
JP (1) JP5586920B2 (https=)
KR (1) KR101581173B1 (https=)
CN (1) CN101740495B (https=)
TW (1) TWI487020B (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
WO2012046428A1 (ja) * 2010-10-08 2012-04-12 シャープ株式会社 半導体装置の製造方法
US8552536B2 (en) 2010-12-16 2013-10-08 Qualcomm Mems Technologies, Inc. Flexible integrated circuit device layers and processes
JP6029040B2 (ja) * 2012-05-31 2016-11-24 エルジー・ケム・リミテッド 有機電子装置の製造方法
US8815707B2 (en) * 2012-06-21 2014-08-26 Board of Trustess of the Leland Stanford Junior University Environmentally-assisted technique for transferring devices onto non-conventional substrates
TWI642094B (zh) 2013-08-06 2018-11-21 半導體能源研究所股份有限公司 剝離方法
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
CN104576971A (zh) * 2013-10-24 2015-04-29 胜华科技股份有限公司 可挠式元件及其制造方法
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
TW201519725A (zh) * 2013-11-14 2015-05-16 Wintek Corp 電子元件半成品、電子元件及其製造方法
EP3075005A1 (en) * 2013-11-25 2016-10-05 The Board of Trustees of The Leland Stanford Junior University Laser liftoff of epitaxial thin film structures
DE112015000866T5 (de) * 2014-02-19 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung und Ablöseverfahren
JP6603486B2 (ja) * 2014-06-27 2019-11-06 株式会社半導体エネルギー研究所 発光装置の作製方法
JP6531360B2 (ja) * 2014-08-25 2019-06-19 凸版印刷株式会社 有機ｅｌ発光素子及び有機ｅｌ発光素子の製造方法
CN104992944B (zh) 2015-05-26 2018-09-11 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法
KR102354973B1 (ko) * 2015-06-10 2022-01-25 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
DE102015015452A1 (de) * 2015-12-02 2017-06-08 Forschungszentrum Jülich GmbH Verfahren zum Planarisieren von Nanostrukturen
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
US9870099B2 (en) * 2016-03-29 2018-01-16 Microsoft Technology Licensing, Llc Pressure sensing display
CN109760320B (zh) * 2018-12-05 2022-01-25 歌尔股份有限公司 光学薄膜转移方法和光学薄膜转移装置
CN110234056B (zh) 2019-06-21 2021-01-12 京东方科技集团股份有限公司 换能器及其制备方法、换能装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050148121A1 (en) * 2003-12-19 2005-07-07 Shunpei Yamazaki Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US20060068536A1 (en) * 2004-09-24 2006-03-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and semiconductor device and electronic device
US20070029554A1 (en) * 2005-08-05 2007-02-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US20070196999A1 (en) * 2004-07-30 2007-08-23 Semiconductor Energy Laboratory Co., Ltd. Method For Manufacturing Semiconductor Device
US20070194323A1 (en) * 2006-02-23 2007-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4034225C2 (de) * 1990-10-26 1994-01-27 Reinhard Jurisch Datenträger für Identifikationssysteme
JP3352340B2 (ja) * 1995-10-06 2002-12-03 キヤノン株式会社 半導体基体とその製造方法
US5541399A (en) * 1994-09-30 1996-07-30 Palomar Technologies Corporation RF transponder with resonant crossover antenna coil
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3579492B2 (ja) 1995-03-16 2004-10-20 株式会社半導体エネルギー研究所 表示装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
EP0848415A1 (en) 1995-08-31 1998-06-17 Nitto Denko Corporation Method and apparatus for peeling protective adhesive tape from semiconductor wafer
JP3809681B2 (ja) 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
EP1758169A3 (en) * 1996-08-27 2007-05-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
JP4619462B2 (ja) 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
ATE261612T1 (de) * 1996-12-18 2004-03-15 Canon Kk Vefahren zum herstellen eines halbleiterartikels unter verwendung eines substrates mit einer porösen halbleiterschicht
JP3960645B2 (ja) * 1996-12-27 2007-08-15 ローム株式会社 回路チップ搭載カードおよび回路チップモジュール
US6326279B1 (en) * 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US6452091B1 (en) * 1999-07-14 2002-09-17 Canon Kabushiki Kaisha Method of producing thin-film single-crystal device, solar cell module and method of producing the same
JP2001026500A (ja) 1999-07-14 2001-01-30 Canon Inc 薄膜単結晶デバイスの製造法
JP2001111081A (ja) 1999-07-30 2001-04-20 Canon Inc 太陽電池モジュール及び太陽電池モジュールの製造方法
US6391220B1 (en) * 1999-08-18 2002-05-21 Fujitsu Limited, Inc. Methods for fabricating flexible circuit structures
US7060153B2 (en) * 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
JP4748859B2 (ja) 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP4884592B2 (ja) 2000-03-15 2012-02-29 株式会社半導体エネルギー研究所 発光装置の作製方法及び表示装置の作製方法
US7159241B1 (en) * 2000-06-15 2007-01-02 Hitachi, Ltd. Method for the determination of soundness of a sheet-shaped medium, and method for the verification of data of a sheet-shaped medium
JP3534042B2 (ja) * 2000-06-21 2004-06-07 オムロン株式会社 コイン形ｉｃタグおよびその製造方法
SG136795A1 (en) * 2000-09-14 2007-11-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4803884B2 (ja) * 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US20030006121A1 (en) * 2001-07-09 2003-01-09 Lee Kenneth Yukou Passive radio frequency identification system for identifying and tracking currency
TW564471B (en) * 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6887650B2 (en) * 2001-07-24 2005-05-03 Seiko Epson Corporation Transfer method, method of manufacturing thin film devices, method of manufacturing integrated circuits, circuit board and manufacturing method thereof, electro-optical apparatus and manufacturing method thereof, ic card, and electronic appliance
TW558743B (en) * 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP4030758B2 (ja) * 2001-12-28 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
EP1463637B1 (de) * 2002-01-10 2008-07-02 Bundesdruckerei GmbH Wert- oder sicherheitsdokument mit einem schalter
JP3823870B2 (ja) * 2002-04-22 2006-09-20 セイコーエプソン株式会社 配線板の製造方法、および電子機器の製造方法
JP2004047975A (ja) 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
DE60325669D1 (de) 2002-05-17 2009-02-26 Semiconductor Energy Lab Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US7045073B2 (en) * 2002-12-18 2006-05-16 Intel Corporation Pre-etch implantation damage for the removal of thin film layers
JP4637477B2 (ja) 2002-12-27 2011-02-23 株式会社半導体エネルギー研究所 剥離方法
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
TWI330269B (en) 2002-12-27 2010-09-11 Semiconductor Energy Lab Separating method
TWI328837B (en) * 2003-02-28 2010-08-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US7105448B2 (en) * 2003-02-28 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Method for peeling off semiconductor element and method for manufacturing semiconductor device
JP2004311955A (ja) * 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法
JP2005079395A (ja) 2003-09-01 2005-03-24 Seiko Epson Corp 積層体及びその製造方法、電気光学装置、電子機器
JP2005079553A (ja) * 2003-09-03 2005-03-24 Seiko Epson Corp 転写方法、剥離方法、及び剥離装置
JP2005148638A (ja) 2003-11-19 2005-06-09 Nitto Denko Corp 粘着型光学フィルムの剥離方法
CN100583193C (zh) * 2003-11-28 2010-01-20 株式会社半导体能源研究所 制造显示设备的方法
US7566640B2 (en) 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
CN100502018C (zh) 2004-02-06 2009-06-17 株式会社半导体能源研究所 薄膜集成电路的制造方法和元件基片
US7015075B2 (en) * 2004-02-09 2006-03-21 Freescale Semiconuctor, Inc. Die encapsulation using a porous carrier
CN100521117C (zh) * 2004-02-25 2009-07-29 株式会社半导体能源研究所 半导体器件及其制造方法
KR101187403B1 (ko) * 2004-06-02 2012-10-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
CN101599456B (zh) 2004-06-24 2011-03-09 株式会社半导体能源研究所 制造薄膜集成电路的方法
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7534702B2 (en) * 2004-06-29 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
WO2006011665A1 (en) * 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
EP1800348A4 (en) 2004-08-23 2015-09-16 Semiconductor Energy Lab Wireless chip and manufacturing method thereof
JP4801337B2 (ja) * 2004-09-21 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5072208B2 (ja) * 2004-09-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7482248B2 (en) * 2004-12-03 2009-01-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP4649198B2 (ja) * 2004-12-20 2011-03-09 新光電気工業株式会社 配線基板の製造方法
JP4479512B2 (ja) 2005-01-18 2010-06-09 東レ株式会社 回路基板用部材および回路基板用部材の製造方法
JP2006245544A (ja) * 2005-01-28 2006-09-14 Semiconductor Energy Lab Co Ltd パターン付基板及びその形成方法、並びに半導体装置及びその作製方法
JP5052031B2 (ja) * 2005-06-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2007086863A (ja) * 2005-09-20 2007-04-05 Fuji Xerox Co Ltd 非接触ｉｃタグ、非接触ｉｃタグを備えた部材のパッケージ及び非接触ｉｃタグを備えた部材を用いる装置
JP5094232B2 (ja) * 2006-06-26 2012-12-12 株式会社半導体エネルギー研究所 半導体装置を内包する用紙およびその作製方法
TWI433306B (zh) * 2006-09-29 2014-04-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8137417B2 (en) * 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
JP4402144B2 (ja) * 2006-09-29 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050148121A1 (en) * 2003-12-19 2005-07-07 Shunpei Yamazaki Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US20070196999A1 (en) * 2004-07-30 2007-08-23 Semiconductor Energy Laboratory Co., Ltd. Method For Manufacturing Semiconductor Device
US20060068536A1 (en) * 2004-09-24 2006-03-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device, and semiconductor device and electronic device
US20070029554A1 (en) * 2005-08-05 2007-02-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and manufacturing method thereof
US20070194323A1 (en) * 2006-02-23 2007-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
US8058083B2 (en) 2011-11-15
KR101581173B1 (ko) 2015-12-30
JP2010153804A (ja) 2010-07-08
KR20100056983A (ko) 2010-05-28
JP5586920B2 (ja) 2014-09-10
TW201036056A (en) 2010-10-01
US20100124795A1 (en) 2010-05-20
CN101740495A (zh) 2010-06-16
CN101740495B (zh) 2014-03-12

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