KR101581173B1 - 플렉시블 반도체 장치의 제작 방법 - Google Patents

플렉시블 반도체 장치의 제작 방법 Download PDF

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KR101581173B1
KR101581173B1 KR1020090112002A KR20090112002A KR101581173B1 KR 101581173 B1 KR101581173 B1 KR 101581173B1 KR 1020090112002 A KR1020090112002 A KR 1020090112002A KR 20090112002 A KR20090112002 A KR 20090112002A KR 101581173 B1 KR101581173 B1 KR 101581173B1
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layer
peeling
film
semiconductor element
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KR20100056983A (ko
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신고 에구치
요시아키 오이카와
마사히로 카타야마
아미 나카무라
요헤이 몬마
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020090112002A 2008-11-20 2009-11-19 플렉시블 반도체 장치의 제작 방법 Active KR101581173B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008296369 2008-11-20
JPJP-P-2008-296369 2008-11-20

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Publication Number Publication Date
KR20100056983A KR20100056983A (ko) 2010-05-28
KR101581173B1 true KR101581173B1 (ko) 2015-12-30

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Country Link
US (1) US8058083B2 (https=)
JP (1) JP5586920B2 (https=)
KR (1) KR101581173B1 (https=)
CN (1) CN101740495B (https=)
TW (1) TWI487020B (https=)

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KR101424395B1 (ko) * 2012-05-31 2014-07-28 주식회사 엘지화학 유기전자장치의 제조방법
US8815707B2 (en) * 2012-06-21 2014-08-26 Board of Trustess of the Leland Stanford Junior University Environmentally-assisted technique for transferring devices onto non-conventional substrates
CN105474355B (zh) 2013-08-06 2018-11-13 株式会社半导体能源研究所 剥离方法
TWI777433B (zh) 2013-09-06 2022-09-11 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
CN104576971A (zh) * 2013-10-24 2015-04-29 胜华科技股份有限公司 可挠式元件及其制造方法
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EP3075005A1 (en) * 2013-11-25 2016-10-05 The Board of Trustees of The Leland Stanford Junior University Laser liftoff of epitaxial thin film structures
KR102334815B1 (ko) * 2014-02-19 2021-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 박리 방법
JP6603486B2 (ja) * 2014-06-27 2019-11-06 株式会社半導体エネルギー研究所 発光装置の作製方法
JP6531360B2 (ja) * 2014-08-25 2019-06-19 凸版印刷株式会社 有機ｅｌ発光素子及び有機ｅｌ発光素子の製造方法
CN104992944B (zh) 2015-05-26 2018-09-11 京东方科技集团股份有限公司 一种柔性显示母板及柔性显示面板的制作方法
KR102354973B1 (ko) * 2015-06-10 2022-01-25 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조방법
DE102015015452A1 (de) * 2015-12-02 2017-06-08 Forschungszentrum Jülich GmbH Verfahren zum Planarisieren von Nanostrukturen
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
US9870099B2 (en) * 2016-03-29 2018-01-16 Microsoft Technology Licensing, Llc Pressure sensing display
CN109760320B (zh) * 2018-12-05 2022-01-25 歌尔股份有限公司 光学薄膜转移方法和光学薄膜转移装置
CN110234056B (zh) * 2019-06-21 2021-01-12 京东方科技集团股份有限公司 换能器及其制备方法、换能装置

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JP5586920B2 (ja) 2014-09-10
TWI487020B (zh) 2015-06-01
CN101740495A (zh) 2010-06-16
US8058083B2 (en) 2011-11-15
KR20100056983A (ko) 2010-05-28
TW201036056A (en) 2010-10-01
JP2010153804A (ja) 2010-07-08
US20100124795A1 (en) 2010-05-20
CN101740495B (zh) 2014-03-12

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