CN101689592B - Ⅲ族氮化物半导体发光元件及其制造方法和灯 - Google Patents

Ⅲ族氮化物半导体发光元件及其制造方法和灯 Download PDF

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CN101689592B
CN101689592B CN2008800221346A CN200880022134A CN101689592B CN 101689592 B CN101689592 B CN 101689592B CN 2008800221346 A CN2008800221346 A CN 2008800221346A CN 200880022134 A CN200880022134 A CN 200880022134A CN 101689592 B CN101689592 B CN 101689592B
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intermediate layer
nitride semiconductor
layer
iii nitride
semiconductor light
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CN101689592A (zh
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加治亘章
三木久幸
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Toyoda Gosei Co Ltd
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Showa Denko KK
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    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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CN2008800221346A 2007-07-04 2008-07-03 Ⅲ族氮化物半导体发光元件及其制造方法和灯 Active CN101689592B (zh)

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JP2007176099A JP4714712B2 (ja) 2007-07-04 2007-07-04 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP176099/2007 2007-07-04
PCT/JP2008/062072 WO2009005126A1 (ja) 2007-07-04 2008-07-03 Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ

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US20100327311A1 (en) 2010-12-30
KR101042417B1 (ko) 2011-06-16
JP4714712B2 (ja) 2011-06-29
TW200917529A (en) 2009-04-16
KR20100017917A (ko) 2010-02-16
CN101689592A (zh) 2010-03-31
WO2009005126A1 (ja) 2009-01-08
JP2009016531A (ja) 2009-01-22
TWI491064B (zh) 2015-07-01

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