CN101567392B - 薄膜晶体管 - Google Patents

薄膜晶体管 Download PDF

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Publication number
CN101567392B
CN101567392B CN2009101417694A CN200910141769A CN101567392B CN 101567392 B CN101567392 B CN 101567392B CN 2009101417694 A CN2009101417694 A CN 2009101417694A CN 200910141769 A CN200910141769 A CN 200910141769A CN 101567392 B CN101567392 B CN 101567392B
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China
Prior art keywords
film
silicon oxide
oxide film
silicon
mentioned
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CN2009101417694A
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Chinese (zh)
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CN101567392A (zh
Inventor
若松贞次
菊池亨
桥本征典
仓田敬臣
浅利伸
斋藤一也
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Ulvac Inc
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Ulvac Inc
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Publication of CN101567392A publication Critical patent/CN101567392A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN2009101417694A 2004-04-23 2005-04-25 薄膜晶体管 Active CN101567392B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-127777 2004-04-23
JP2004127777 2004-04-23
JP2004127777 2004-04-23

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800009560A Division CN100550426C (zh) 2004-04-23 2005-04-25 薄膜晶体管及其制造方法

Publications (2)

Publication Number Publication Date
CN101567392A CN101567392A (zh) 2009-10-28
CN101567392B true CN101567392B (zh) 2011-07-20

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ID=35197275

Family Applications (2)

Application Number Title Priority Date Filing Date
CN2009101417694A Active CN101567392B (zh) 2004-04-23 2005-04-25 薄膜晶体管
CNB2005800009560A Active CN100550426C (zh) 2004-04-23 2005-04-25 薄膜晶体管及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2005800009560A Active CN100550426C (zh) 2004-04-23 2005-04-25 薄膜晶体管及其制造方法

Country Status (5)

Country Link
JP (2) JP5066361B2 (ko)
KR (1) KR101184232B1 (ko)
CN (2) CN101567392B (ko)
TW (1) TW200537573A (ko)
WO (1) WO2005104239A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4978847B2 (ja) * 2007-06-01 2012-07-18 Ｎｌｔテクノロジー株式会社 シリコン酸化膜及びその製造方法並びにそれを用いたゲート絶縁膜を有する半導体装置
KR102503687B1 (ko) * 2009-07-03 2023-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
KR101202319B1 (ko) 2010-07-26 2012-11-16 삼성전자주식회사 노광 장치 및 그 제어 방법
CN102646595A (zh) 2011-11-11 2012-08-22 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、显示器件
CN103715266A (zh) * 2013-12-25 2014-04-09 京东方科技集团股份有限公司 氧化物薄膜晶体管、阵列基板的制造方法及显示器件
CN104600082A (zh) * 2015-01-14 2015-05-06 京东方科技集团股份有限公司 一种阵列基板、显示面板及阵列基板的制作方法
WO2019087784A1 (ja) * 2017-10-31 2019-05-09 株式会社アルバック 薄膜トランジスタ及びその製造方法
KR102189557B1 (ko) * 2019-03-05 2020-12-11 에스케이머티리얼즈 주식회사 박막 트랜지스터 및 이의 제조방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1081022A (zh) * 1992-03-27 1994-01-19 株式会社半导体能源研究所 一种半导体器件及其制造方法
US6249021B1 (en) * 1997-10-06 2001-06-19 Seiko Epson Corporation Nonvolatile semiconductor memory device and method of manufacturing the same

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3338481B2 (ja) * 1992-09-08 2002-10-28 ソニー株式会社 液晶表示装置
JPH0799253A (ja) * 1993-09-27 1995-04-11 Sony Corp Ｓｒａｍ型半導体装置およびその製造方法
JPH07162009A (ja) * 1993-12-08 1995-06-23 Casio Comput Co Ltd 薄膜トランジスタ
JP2742381B2 (ja) * 1994-02-24 1998-04-22 株式会社ジーティシー 絶縁膜の形成方法
JPH07262009A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd パイプライン処理コンピュータ装置
JPH11168216A (ja) * 1997-12-04 1999-06-22 Matsushita Electron Corp 薄膜トランジスタおよびその製造方法
JP2000150389A (ja) * 1998-11-06 2000-05-30 Furontekku:Kk プラズマｃｖｄ装置およびこれを用いた半導体装置の製造方法
JP2000243802A (ja) * 1999-02-19 2000-09-08 Toshiba Corp 半導体装置の製造方法及び装置
JP2001102322A (ja) * 1999-09-29 2001-04-13 Seiko Epson Corp 半導体装置の製造方法及び電気光学装置の製造方法並びにこれらの製造方法により製造された半導体装置及び電気光学装置
JP4562835B2 (ja) * 1999-11-05 2010-10-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1127957A1 (en) * 2000-02-24 2001-08-29 Asm Japan K.K. A film forming apparatus having cleaning function
JP4537610B2 (ja) * 2001-04-11 2010-09-01 東芝モバイルディスプレイ株式会社 液晶表示装置及びその製造方法
JP2003142496A (ja) * 2001-11-08 2003-05-16 Matsushita Electric Ind Co Ltd 薄膜半導体素子の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1081022A (zh) * 1992-03-27 1994-01-19 株式会社半导体能源研究所 一种半导体器件及其制造方法
US6249021B1 (en) * 1997-10-06 2001-06-19 Seiko Epson Corporation Nonvolatile semiconductor memory device and method of manufacturing the same

Also Published As

Publication number Publication date
KR20070009526A (ko) 2007-01-18
CN1842919A (zh) 2006-10-04
TW200537573A (en) 2005-11-16
JPWO2005104239A1 (ja) 2008-03-13
CN101567392A (zh) 2009-10-28
JP5066361B2 (ja) 2012-11-07
WO2005104239A1 (ja) 2005-11-03
JP2012119691A (ja) 2012-06-21
KR101184232B1 (ko) 2012-09-19
CN100550426C (zh) 2009-10-14

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