CN101542629B - 存储器设备和计算系统 - Google Patents

存储器设备和计算系统 Download PDF

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Publication number
CN101542629B
CN101542629B CN200780031629.0A CN200780031629A CN101542629B CN 101542629 B CN101542629 B CN 101542629B CN 200780031629 A CN200780031629 A CN 200780031629A CN 101542629 B CN101542629 B CN 101542629B
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CN
China
Prior art keywords
subset
precharge
bit lines
memory cells
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN200780031629.0A
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English (en)
Chinese (zh)
Other versions
CN101542629A (zh
Inventor
G·R·莫汉·拉奥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
S Aqua Semiconductor LLC
Original Assignee
S Aqua Semiconductor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/771,853 external-priority patent/US7724593B2/en
Application filed by S Aqua Semiconductor LLC filed Critical S Aqua Semiconductor LLC
Priority to CN201410048469.2A priority Critical patent/CN103871452B/zh
Publication of CN101542629A publication Critical patent/CN101542629A/zh
Application granted granted Critical
Publication of CN101542629B publication Critical patent/CN101542629B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/18—Bit line organisation; Bit line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Vehicle Body Suspensions (AREA)
  • Reduction Or Emphasis Of Bandwidth Of Signals (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
  • Secondary Cells (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Pit Excavations, Shoring, Fill Or Stabilisation Of Slopes (AREA)
  • Measurement Of Force In General (AREA)
  • Underground Structures, Protecting, Testing And Restoring Foundations (AREA)
CN200780031629.0A 2006-07-07 2007-07-06 存储器设备和计算系统 Active CN101542629B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410048469.2A CN103871452B (zh) 2006-07-07 2007-07-06 使用前端预充电的存储器和方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81929606P 2006-07-07 2006-07-07
US60/819,296 2006-07-07
US11/771,853 2007-06-29
US11/771,853 US7724593B2 (en) 2006-07-07 2007-06-29 Memories with front end precharge
PCT/US2007/072974 WO2008006075A2 (en) 2006-07-07 2007-07-06 Memories with front end precharge

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410048469.2A Division CN103871452B (zh) 2006-07-07 2007-07-06 使用前端预充电的存储器和方法

Publications (2)

Publication Number Publication Date
CN101542629A CN101542629A (zh) 2009-09-23
CN101542629B true CN101542629B (zh) 2014-02-26

Family

ID=38895499

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201410048469.2A Active CN103871452B (zh) 2006-07-07 2007-07-06 使用前端预充电的存储器和方法
CN200780031629.0A Active CN101542629B (zh) 2006-07-07 2007-07-06 存储器设备和计算系统

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201410048469.2A Active CN103871452B (zh) 2006-07-07 2007-07-06 使用前端预充电的存储器和方法

Country Status (7)

Country Link
EP (1) EP2041750B1 (enExample)
JP (2) JP5209619B2 (enExample)
KR (1) KR101088548B1 (enExample)
CN (2) CN103871452B (enExample)
AT (1) ATE479186T1 (enExample)
DE (1) DE602007008729D1 (enExample)
WO (1) WO2008006075A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755961B2 (en) * 2006-07-07 2010-07-13 Rao G R Mohan Memories with selective precharge
US7995409B2 (en) * 2007-10-16 2011-08-09 S. Aqua Semiconductor, Llc Memory with independent access and precharge
US20160141020A1 (en) * 2014-11-18 2016-05-19 Mediatek Inc. Static random access memory free from write disturb and testing method thereof
CN105701040B (zh) 2014-11-28 2018-12-07 杭州华为数字技术有限公司 一种激活内存的方法及装置
US10373665B2 (en) * 2016-03-10 2019-08-06 Micron Technology, Inc. Parallel access techniques within memory sections through section independence
CN108962324B (zh) * 2017-05-24 2020-12-15 华邦电子股份有限公司 存储器存储装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657285A (en) * 1995-07-14 1997-08-12 Cirrus Logic, Inc. Pipelined address memories, and systems and methods using the same
EP0869507A2 (en) * 1997-03-31 1998-10-07 Seiko Epson Corporation Low power memory including selective precharge circuit
CN1905074A (zh) * 2005-07-27 2007-01-31 松下电器产业株式会社 半导体存储器件

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JPS581883A (ja) * 1981-06-25 1983-01-07 Fujitsu Ltd 低電力スタチツクｒａｍ
JPS63266689A (ja) * 1987-04-24 1988-11-02 Hitachi Ltd 半導体メモリ
US4845677A (en) * 1987-08-17 1989-07-04 International Business Machines Corporation Pipelined memory chip structure having improved cycle time
JPH02128249A (ja) * 1988-11-09 1990-05-16 Hitachi Ltd 記憶制御方式
JPH04162665A (ja) * 1990-10-26 1992-06-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JPH0512873A (ja) * 1991-07-05 1993-01-22 Fujitsu Ltd 半導体記憶装置
JPH0644784A (ja) * 1991-12-13 1994-02-18 Kawasaki Steel Corp 半導体スタティックメモリ
JP3481263B2 (ja) * 1992-02-19 2003-12-22 株式会社リコー シリアル記憶装置
JPH06119793A (ja) * 1992-10-07 1994-04-28 Matsushita Electric Ind Co Ltd 読み出し専用記憶装置
JP3559312B2 (ja) * 1994-06-30 2004-09-02 松下電器産業株式会社 Ｒｏｍ装置
JP2773665B2 (ja) * 1994-12-28 1998-07-09 ヤマハ株式会社 半導体記憶装置
JP2773663B2 (ja) * 1994-12-27 1998-07-09 ヤマハ株式会社 半導体記憶装置
US5630174A (en) * 1995-02-03 1997-05-13 Cirrus Logic, Inc. Adapter for detecting whether a peripheral is standard or multimedia type format and selectively switching the peripheral to couple or bypass the system bus
KR0147706B1 (ko) * 1995-06-30 1998-09-15 김주용 고속 동기형 마스크 롬
US5636174A (en) * 1996-01-11 1997-06-03 Cirrus Logic, Inc. Fast cycle time-low latency dynamic random access memories and systems and methods using the same
US6061759A (en) * 1996-02-09 2000-05-09 Apex Semiconductor, Inc. Hidden precharge pseudo cache DRAM
JPH1011969A (ja) * 1996-06-21 1998-01-16 Toshiba Microelectron Corp 半導体記憶装置
JPH10106264A (ja) * 1996-09-26 1998-04-24 Nec Corp 半導体記憶装置
US6314049B1 (en) * 2000-03-30 2001-11-06 Micron Technology, Inc. Elimination of precharge operation in synchronous flash memory
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JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US6529412B1 (en) * 2002-01-16 2003-03-04 Advanced Micro Devices, Inc. Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge
JP2003271445A (ja) * 2002-03-15 2003-09-26 Sony Corp メモリ制御装置及び方法
US6834023B2 (en) 2002-08-01 2004-12-21 Micron Technology, Inc. Method and apparatus for saving current in a memory device
US7154795B2 (en) * 2004-07-30 2006-12-26 United Memories, Inc. Clock signal initiated precharge technique for active memory subarrays in dynamic random access memory (DRAM) devices and other integrated circuit devices incorporating embedded DRAM
FR2874734A1 (fr) * 2004-08-26 2006-03-03 St Microelectronics Sa Procede de lecture de cellules memoire programmables et effacables electriquement, a precharge anticipee de lignes de bit
US7755961B2 (en) * 2006-07-07 2010-07-13 Rao G R Mohan Memories with selective precharge
US7995409B2 (en) * 2007-10-16 2011-08-09 S. Aqua Semiconductor, Llc Memory with independent access and precharge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657285A (en) * 1995-07-14 1997-08-12 Cirrus Logic, Inc. Pipelined address memories, and systems and methods using the same
EP0869507A2 (en) * 1997-03-31 1998-10-07 Seiko Epson Corporation Low power memory including selective precharge circuit
CN1905074A (zh) * 2005-07-27 2007-01-31 松下电器产业株式会社 半导体存储器件

Also Published As

Publication number Publication date
WO2008006075A3 (en) 2008-10-02
CN103871452B (zh) 2017-03-01
JP5209619B2 (ja) 2013-06-12
EP2041750A4 (en) 2009-09-09
WO2008006075A2 (en) 2008-01-10
ATE479186T1 (de) 2010-09-15
JP2009543269A (ja) 2009-12-03
CN103871452A (zh) 2014-06-18
JP2013037760A (ja) 2013-02-21
EP2041750A2 (en) 2009-04-01
EP2041750B1 (en) 2010-08-25
DE602007008729D1 (de) 2010-10-07
CN101542629A (zh) 2009-09-23
KR20090032112A (ko) 2009-03-31
KR101088548B1 (ko) 2011-12-05

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