CN101519183A - 具有集成电路管芯的微机电系统封装 - Google Patents
具有集成电路管芯的微机电系统封装 Download PDFInfo
- Publication number
- CN101519183A CN101519183A CNA2009100019632A CN200910001963A CN101519183A CN 101519183 A CN101519183 A CN 101519183A CN A2009100019632 A CNA2009100019632 A CN A2009100019632A CN 200910001963 A CN200910001963 A CN 200910001963A CN 101519183 A CN101519183 A CN 101519183A
- Authority
- CN
- China
- Prior art keywords
- mems
- capping portion
- mems device
- capping
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00238—Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0785—Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates
- B81C2203/0792—Forming interconnections between the electronic processing unit and the micromechanical structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73257—Bump and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
Abstract
本发明提供了一种具有封装上系统(SOP)结构和板上系统(SOB)结构的微机电系统(MEMS)封装。该微机电系统封装包括以堆叠方式设置的一个或多个MEMS管芯、具有一或多个集成电路管芯的封盖部、以及封装基底或印刷电路板(PCB)。垂直连接器,例如穿透硅通孔(TSV)形成用于在各种部件之间提供较短的电连接。本发明的微机电系统封装方案具有较高的集成密度、减少的MEMS封装迹线、减少的射频延迟和功率消耗。
Description
技术领域
本发明通常涉及一种微机电系统(MEMS),尤其涉及一种具有封装上系统(SOP)或者板上系统(SOB)构造的多个集成电路管芯(dies)的集成MEMS器件,
背景技术
MEMS器件是通过微制造技术,将缩微机械元件、传感器、执行器以及电子元件在共用硅基底上的集成。MEMS器件上的传感器通常包括缩微的可移动结构,例如桥、悬臂梁、悬挂块、隔膜或者电容元件装置。传感器可以通过测量机械、热量、生物、化学、光学以及/或者磁现象,从环境中采集信息。然后,电子元件对来自传感器的信息进行处理,并通过一些决策制定机构指示执行器进行响应以移动、定位、调节、抽取以及/或者过滤,从而为了某些期望的结果或目的对环境进行控制。在各种商业产品中已发现MEMS器件的应用。
通过将MEMS器件的检测和响应能力与高级集成电路的强大信号处理能力集合到一起,MEMS器件的功能性、完善性及应用范围能够到达空前水平,并且引起了几乎每个产品类别的变革,使得真正系统级封装(SIP)可能成为现实。集成电路可以认为是系统的“大脑”,而MEMS器件可以作为系统的“眼睛”和“手臂”,来允许微系统检测和控制环境。
作为一个例子,可以开发一种SIP,将信号处理集成电路与三轴MEMS加速传感器整合到一起,从而形成视频游戏的基于运动的控制器。通过放弃传统的用双手拿着的控制器,上述控制器可使得各种年龄的玩游戏者感受到一种真正交互的、逼真的游戏体验。游戏控制器可以允许玩游戏者在以往的玩游戏历史中从未经历的方式,去跑、跳、旋转、滑行、驾驶、加速、阻挡(bank)、俯冲、踢、扔掷和记分。
在另一个例子中,MEMS射频转换模块可以与信号处理集成电路结合一起以形成无线设备,例如蜂窝电话、无线电脑网络、通讯系统或者雷达系统中的SIP。由于具有低功耗特性以及在射频范围内运行的能力,MEMS射频转换模块可以用作无线设备的天线转换、模式转换或者发送/接收转换,并提供显著的技术利益。
在现有的将MEMS器件和其他信号处理集成电路集成在电子系统中的封装方法中,与MEMS器件的电连接通常利用水平出现在MEMS器件边缘的电引线实现。这些水平的电引线增加了SIP的迹线尺寸。除了在现有封装方式存在的其他缺陷以外,水平引线导致产生可能影响电路特性的交叉信号线、可能增加信号潜伏的过长水平信号线以及可能导致出现不希望的感应的长金属迹线。
发明内容
通过本发明的实施例,通常能够解决或者规避上述及其他问题,本发明的实施例提供了一种微机电系统封装方案,该方案提供封装上系统(SOP)结构和板上系统(SOB)结构。该微机电系统封装包括以堆叠方式设置的一个或多个MEMS管芯、具有一个或多个集成电路管芯的封盖部、以及封装基底或印刷电路板(PCB)。例如穿透硅通孔(TSV)的垂直连接器形成用于在各种部件之间提供较短的电连接。本发明的微机电系统封装方案具有较高的集成密度、减少的MEMS封装迹线、减少的射频延迟和功率消耗。
在一个优选实施例中,微机电系统包括:具有多个第一端子的微机电系统器件;包括至少一个穿透通孔和至少一个微电子器件以及多个第二端子的封盖部;其中所述微机电系统和所述封盖部通过所述多个第一端子和所述多个第二端子电连接。
在另一个优选实施例中,一种设备包括:微机电系统器件,所述微机电系统器件包括至少一个电子电路,所述至少一个电子电路电连接到所述微机电系统器件的第一表面上的至少一个端子。所述设备还包括封盖部,所述封盖部位于所述微机电系统器件的下方,并包括至少一个半导体器件,其中所述至少一个半导体器件通过所述微机电系统器件的所述至少一个端子,电连接到所述微机电系统器件的所述至少一个电子电路上,并且其中所述至少一个半导体器件还通过所述封盖部中的内部金属互连线和至少一个穿透通孔,电连接到所述封盖部的第一连接面上的至少一个接触部上。所述设备还包括位于所述封盖部下方的基底,所述基底包括位于支撑面上的至少一个接触部。
附图说明
为了更完全地理解本发明及其优点,下面结合附图对本发明实施例作出描述,其中:
图1为本发明实施例的微机电系统封装中包括的电子元件的展开图;
图2A为本发明实施例的微机电系统封装的剖视图;
图2B为图2A所示的微机电系统封装的俯视图;
图3为本发明实施例的微机电系统封装的俯视图;和
图4-9为本发明实施例的微机电系统封装的剖视图。
具体实施方式
下面详细描述本发明的实施例,但是应当了解,本发明提供有许多可适用的发明概念,这些概念能够体现在各种特定环境下。这里描述的特定实施例仅仅为实现和使用本发明的特定方式的示例,而不能限制本发明的保护范围。
下面,将结合优选实施例描述本发明,即利用多个集成电路管芯(dies)和/或其他电子部件以封装上系统(SOP)或者板上系统(SOB)构造集成微机电系统(MEMS)器件的装置和方法。但是,本发明实施例描述的特征、结构或者特性也可以适当的方式结合,从而形成一个或多个其他实施例。并且,为了阐明的目的,绘制的附图仅用于阐述发明特征或特性的有关形态,并非按比例绘制。
图1显示了本发明实施例各个MEMS封装结构中涉及的一些主要部件的展开图。这些部件包括MEMS器件120、封盖部140、嵌入部140以及封装基底或者印刷电路板(PCB)180。MEMS器件120包括传感器结构部122和电子电路124;封盖部140包括一个或多个半导体集成电路、微波传输带电路,或者其他类似缩微电子电路;嵌入部160包括穿透结构162,从而在位于封盖部140上具有小间距的接触部与在封装基底或PCB 180的连接表面上具有大间距的接触部之间提供电适配。嵌入部160可以由各种合适的材料制成,并且根据应用具有不同的结构。虽然PCB 180最好为印刷电路板,但是它可以包括一个或多个形成在其上的电路元件182。电路元件182可以包括有源元件、无源元件或者有源元件和无源元件的组合,例如晶体管、二极管、电阻器、电容器以及电感器。图1中各种部件的布置用于举例说明一个发明特征,即一个或多个MEMS管芯可以与其他电子元件集成一起形成本发明优选实施例的MEMS封装。正如下文稍后将给出的详细描述,这些部件可以通过各种技术被结合、重新布置以及电连接,从而形成本发明不同实施例的各种MEMS封装构造。
现在参考图2A,该图显示了本发明优选实施例的MEMS封装100的剖视图。MEMS封装100包括MEMS器件120、封盖部140和封装基底180,它们以一个堆叠在另一个上面的方式设置。在本优选实施例中,MEMS器件120的传感器部分包括射频转换模块122,其中射频转换模块122具有从连接表面上方突出的缩微可移动部件。射频转换模块122可以用作无线通讯端口,并能够从一个射频带转换到另一个射频带,以传输射频信号。虽然为了清楚起见图中仅显示了一个射频转换器,但是转换模块122中可以形成有多个射频转换器。MEMS器件120通常还包括电子电路,例如MEMS控制电路,用来处理来自射频转换模块122的信号,并指引处理的信号通过导电端子124到达MEMS封装100的其他部件。在另一个优选实施例中,MEMS器件120包括麦克风、扬声器、惯性传感器、压力传感器、射频可调装置、继电器或其他类似物中的一个或多个。
封盖部140包括半导体器件或者集成电路142,例如数字集成电路、模拟集成电路、MEMS控制集成电路、复合信号集成电路、微处理器、存储器集成电路或者芯片上系统(SOC)构造的集成电路,以及/或者微波传输带电路或其它类似装置中的一个或多个,微波传输带电路例如是微波传输带过滤器、微波传输带谐振器或类似装置,以及包括上述装置的组合。利用微电子处理技术,例如薄膜沉积、光刻、干蚀刻和湿蚀刻以及电镀,这些电路通常形成在例如半导体材料、陶瓷、玻璃及塑料的材料上。为了清楚,封盖部140中的这些微电子电路以图2A中标号142表示。此外,多个导电端子144设置在封盖部140的上表面上,并且导电接触148安装在封盖部140的底部。导电端子144与MEMS器件120上的导电端子124连接,从而实现MEMS器件120的电子电路与封盖部140的微电子电路142之间的电连接。虽然图2A中显示,导电端子124和144通常为直导线,但是它们不局限于该构造。其他合适的低电阻连接器,例如接触器、焊球和衬垫也可以用于实现MEMS器件120的电子电路与封盖部140的微电子电路142之间的电连接。
在一个优选实施例中,MEMS封装100包括与MEMS器件120表面结合的密封环126,以及与封盖部140表面结合的密封环146。当MEMS器件120与封盖部140连接一起时,密封环126与密封环146被挤压在一起,从而形成一个密封套。因此,形成的密封套更好地用于收容传感器部分,例如MEMS器件120的转换模块122,并且保护转换模块122的可移动部件避免受到损害,例如机械接触、电干扰以及化学污染。密封套或者部分的密封套可以预先形成与MEMS器件120结合,或者与封盖部140结合,或者与MEMS器件120、封盖部140均结合。在本实施例中,密封环126、146为金属的。密封环126和146可以利用焊料、金热压(TCB)、金热超声结合(TSB)或类似方式被密封。或者,密封环126和密封环146两者或者其中一个可以由包括例如塑料、聚合物、环氧化物等柔性材料的其他合适材料形成。
MEMS封装100还包括穿过封盖部140的通孔145,以通过导电接触148电连接封盖部140和底部的封装基底或印刷电路板180。在一个优选实施例中,封盖部140包括硅基的半导体集成电路,并且通孔145被电镀或者填充有金属导体,例如铝、铜、钨等、在另一个优选实施例中,封盖部140为形成在陶瓷基底上的微波处理带电路。通过按照预定图案在陶瓷中打孔,并且在孔中填充金属材料从而形成通孔145。为了便于说明,在下面的描述中,通孔145通常指穿透硅通孔(TSV),但是本发明的封盖部140不局限于硅。穿透硅通孔145通过金属互连线147电连接到微电子电路142上,其中金属互连线147形成在封盖部140的各种互连金属层中。封盖部140的导电接触148和封装基底180上的接触部178通过焊球175电性和物理连接,但是其他合适的低电阻连接器也可以使用。当结构180为封装基底时,接触部178可以依次电连接到封装导线上。当结构180为印刷电路板时,接触部178可以依次电连接到印刷电路板上的一个或多个电路元件(图中未显示)上。但是,引线焊垫150和170也可以分别形成在封盖部140和封装基底180的顶面上。引线焊垫150和170可以依次分别连接到封盖部140的微电子电路142和结构180上的封装导线或电路元件上。封盖部140和封装基底或印刷电路板180之间的其他电连接可以通过接合引线155实现,其中接合引线155一端焊接到引线焊垫150上,以及另一端焊接到引线焊垫170上。
在一个优选实施例中,MEMS器件120中的电子电路通过导电端子124和144首先连接到封盖部140的微电子电路142上。然后,由微电子电路142处理的信号通过穿透硅通孔145及/或接合引线155,引导至基底180上的电路元件。在MEMS器件120中的电子线路和基底180上的封装导线或电路元件之间最好不存在直接电连接。一个优点是,可以隔离基底180上的电涌,并且将不会影响MEMS器件120的性能。并且,在本优选实施例中,MEMS器件120较小,并占据封盖部140上很少部分的表面积,并且MEMS器件120上的端子124的间距显著小于封盖部140中穿透硅通孔145的间距。当前的MEMS封装构造可以有利于将具有较小端子间距的小型MEMS管芯集成到具有较大焊球接触或者引线焊垫间距的基底上,其中封盖部140还具有在MEMS器件120和基底180上的不匹配端子间距尺寸之间提供配合的优点。
在其他和/或替换优选实施例中,MEMS器件120夹在封盖部140和基底180之间。MEMS射频模块122被密封在位于封盖部140底面和基底180的顶面之间的密封套中。其他实施例中使用的MEMS端子和密封环与图2A描述的端子124、144以及密封环126、146类似。其他选择实施例中优选使用较大尺寸的MEMS器件120,并且如果设置在封盖部140的顶面,MEMS器件120可能占据封盖部140相当大部分的表面积,这通常是不希望的。
上面描述的MEMS封装构造具有很多优点。一方面,将MEMS器件连接到具有强大信号处理能力的一个或多个集成电路上可以显著增加MEMS器件的功能性、完善性和应用范围。另一方面,将MEMS器件集成到具有一个或多个集成电路的电子系统中,可使得电子系统能听、看并感觉它的环境,并且通过一些复杂的决策制定能力,可使得电子系统指示MEMS器件上的执行器通过移动、定位、调节、抽取以及/或者过滤来响应,从而为了某些期望的结果或目的对环境进行控制。并且,这可以显著扩大集成电子系统的功能性、完善性和应用范围。其他优点包括:当与传统具有水平引线的封装方案相比,堆叠的MEMS封装构造将提供更高的电路密度。此外,端子124和144、穿透硅通孔145以及焊球175在MEMS器件120、封盖部140以及印刷电路板180的电子电路之间提供最短路径的垂直连接,从而通过使得微电子电路模块更加电性靠近,减少射频延迟和功率消耗。图2A所示当前实施例的MEMS封装构造的俯视图如图2B所示。
关于将一个或多个MEMS器件和其他电子部件封装,存在有大量的或不同的替换实施例。为了清楚地说明且避免重复,上面用于描述MEMS封装100的相同数字和字母将用于各种替换实施例和对应图示中的类似元件。并且,上述参考数字这里可以不再详细描述。
需要注意的是,为了清楚描述和避免重复的目的,替换实施例中的基底180可以参考为封装基底或者印刷电路板。当基底180参考为封装基底时,通常包括电连接到封装导线上的焊球接触及/或引线焊垫,其中封装导线可以依次连接到外部。然而当基底180参考为印刷电路板时,通常包括电连接到同一印刷电路板上电路元件的焊球接触及/或引线焊垫。并且,某些优选实施例中描述的基底180应当不局限于该特定结构。例如,当基底180为封装基底时,其也可以表示为印刷电路板,并且反之亦然。当基底180为封装基底时,体现的MEMS封装通常可知具有SOP结构;当基底180为具有一个或多个电路元件的印刷电路板时,体现的MEMS封装通常可知具有SOB结构。
图3为本发明另一优选实施例的俯视图,其中MEMS(微机电)管芯120A、120B和120C形成在封盖部140的顶部,其中封盖部140优选包括片上系统(SOC)结构的集成电路。封盖部140依次堆叠在基底180的上部。MEMS管芯120A、120B和120C可以图2A所述类似方式,电性及物理连接到封盖部140和基底180中的微电路和电路元件上。接合引线155也分别可以通过封盖部140和基底180顶面上的焊垫150及170,用于连接封盖部140的微电路和基底180的电路元件。
图4显示了本发明一个优选实施例的MEMS封装101的剖视图,其中封盖部140具有多层结构,包括上封盖层1401和下封盖层1402。上封盖层1401和下封盖层1402可以通过绝缘层152互相电隔离。每个封盖层1401和1402可以包括半导体材料、陶瓷材料、玻璃、塑料等。并且,微电子电路及/或有源或无源半导体器件可以形成在每个封盖层1401和1402中。在一个优选实施例中,至少一个的封盖层1401和1402包括具有SOC结构的集成电路。形成在不同封盖层中的微电子电路142可以通过穿透硅通孔145电连接一起,其中穿透硅通孔145穿过封盖层1401和1402以及绝缘层152形成。在一个优选实施例中,如图4所示,位于不同封盖层1401和1402中的穿透硅通孔145被对准,并具有显著大于MEMS管芯端子124之间间隔的穿透硅通孔间距。在另一个优选实施例中,位于不同封盖层的穿透硅通孔145间距,从上封盖层1401向底部的封盖层例如下封盖层1402增加,因此封盖部能够匹配具有较小端子间距的MEMS管芯和具有较大焊球接触间距的基底。同样地,可以类似上述图2A描述的方式,通过焊球175或者/以及接合引线155实现封盖部的微电子电路142与基底180的电路元件之间的电连接。
图5显示了本发明另一优选实施例的MEMS封装102的剖视图,其中具有多个堆叠在MEMS封装中的封盖部,例如封盖部140A和140B。每个封盖部140A和140B可以包括硅、陶瓷材料、玻璃、塑料等。并且,微电子电路及/或有源或无源半导体器件可以形成在每个封盖部中。与图4所示的封盖部不同,每个封盖部140A和140B可以预先构造有钝化连接表面,其中在钝化连接表面上预先形成有引线焊垫150a、150b以及/或者焊球接触148。穿透硅通孔145形成在每个封盖部140A和140B中,以连接微电子电路142和焊球接触148。焊球175依次用于电连接封盖部140A到140B上,以及电连接封盖部140B到印刷电路板180上。此外,通过接合引线155a,可以实现封盖部140A和140B中微电子电路142之间的电连接,其中接合引线155a连接封盖部140A后侧的引线焊垫150a和封盖部140B后侧的引线焊垫150b。并且,如图5所示,通过接合引线155b,封盖部140B后侧的引线焊垫150b可以连接到印刷电路板180顶面的焊垫170上,以电连接封盖部140A和140B中的微电子电路142到印刷电路板180的电路元件上。此外,接合引线155c可以形成从封盖部140A后侧的引线焊垫150a到印刷电路板180顶面的焊垫170,实现封盖部140A中的微电子电路142与印刷电路板180的电路元件之间的直接连接。因此,可以看出,本实施例在实现MEMS封装各个部件的电子电路之间的电连接中,提供了很大的灵活性。由于堆叠的封盖部,本实施例也可以方便地参考为具有封装上封装(package-on-package)结构。
图6显示了本发明又一个优选实施例的MEMS封装103的剖视图。MEMS封装103可以具有封装上系统(SOP)结构,其中基底180为封装基底。MEMS封装103也可以具有板上系统(SOB),其中基底180为印刷电路板,并包括各种电路元件。该实施例通过至少下述方式区别于上述的优选实施例。引线焊垫130形成在MEMS器件120的后侧上,以电连接到MEMS器件120的传感器及/或电子电路上。接合引线125形成在MEMS器件120后侧上的引线焊垫130与封盖部140后侧上的引线焊垫150之间。通过封盖部140中的金属迹线137和穿透硅通孔145以及焊球175,焊垫150可以依次连接到封装基底180上的焊球接触部178。与上述实施例类似,来自MEMS器件120的电信号也可以通过端子124和144连接到封盖部140的微电子电路142,通过金属互连线147、穿透硅通孔145以及焊球175被处理并引导至封装基底180上。该实施例在MEMS器件120和基底180之间提供直接电连接路径,绕开封盖部140的微电子电路142。在一个优选实施例中,MEMS器件120的尺寸显著小于封盖部140中穿透硅通孔145间距。例如,MEMS谐振器形成在本实施例的MEMS封装结构中。
图7为本发明另一优选实施例的MEMS封装104的剖视图。与上述优选实施例不同,其中来自MEMS器件120的信号在封盖部140的微电子电路142中被连接和处理,来自MEMS器件120的信号通过金属互连线157、穿透硅通孔145以及焊球175被引导至封装基底180上,没有在封盖部140中处理。也就是说,来自MEMS器件120的电信号通过穿透硅通孔145直接到达封装引线或者印刷电路板。同时,封盖部140中的微电子电路142可以通过接合引线155及/或穿透硅通孔145连接至基底180。在一个优选实施例中,封盖部140包括间距大于MEMS器件120上端子124间距的穿透硅通孔。在另一优选实施例中,如图所示,多层金属互连线157形成在封盖部140中,以匹配具有较小端子间距的MEMS管芯端子124和具有较大间距的封盖部140的穿透硅通孔145及基底180的焊球接触部178。并且,封盖部140可以具有多层结构,并且封盖层堆叠中的穿透硅通孔间距可以从上封盖层向底部的封盖层增加,因此封盖部可以电匹配具有较小端子间距的MEMS管芯和具有较大焊球间距的大基底。在一个优选实施例中,MEMS管芯104包括射频转换模块,其中射频转换模块能够用作天线转换、模式转换和发送/接收转换。
下面参考图8,该图为本发明另一优选实施例的MEMS封装105的剖视图。与上述MEMS封装相同,MEMS封装105包括一个或多个MEMS器件120、一个或多个封盖部140以及封装基底或印刷电路板180。但是,MEMS封装105还包括形成在封盖部140和封装基底180之间的硅嵌入部160。硅嵌入部160包括位于上连接面的导电垫158,其中上连接面具有的导电垫间隔与封盖部140中的穿透硅通孔145的间距匹配。硅嵌入部160还包括位于下连接面的导电垫168,其中下连接面具有的导电垫间隔与封装基底108中焊球垫178的间距匹配。硅嵌入部160更包括穿透硅通孔165,以在导电垫158和168之间提供直接导电路径。焊球175形成在导电垫148和158之间,以提供封盖部140与嵌入部160之间的电连接。焊球175也形成在导电垫168与178之间,以提供嵌入部160与基底180之间的电连接。因此,在封盖部140与基底180的集成电路之间可以实现电匹配。在其他优选实施例中,嵌入部160也可以由其他合适材料制造,并具有不同的构造。
图9显示了本发明另外优选实施例的MEMS封装106。与上述实施例的MEMS封装相比,本实施例的的传感器部分122没有形成在MEMS器件120和封盖部140之间密封的密封套中。相反,MEMS管芯120被翻转,从而在MEMS管芯120与封盖部140的连接面上实现电连接,而不是在设置传感器部分122的表面上。MEMS器件120的电子电路与封盖部140的微电子电路142之间的电连接可以通过端子124和144或者其他合适的低电阻连接器,例如接触器、焊球和焊垫等实现。并且,上面提到的电连接可以在MEMS器件120和封盖部140被分别单独处理和钝化后实现。类似地,穿透硅通孔145形成在封盖部140中,从而电连接微电子电路142和印刷电路板180的电路元件。本实施例最好在MEMS器件120尺寸较大且占据封盖部140相当大部分表面积的情况下使用。在替换的优选实施例中,利用上述方法可以将多个MEMS管芯焊接在封盖部140上。
尽管已经示出和描述了本发明的实施例及其优点,但是应当理解在不脱离由所附权利要求限定的本发明的精神和范围的情况下,可以对这些实施例进行多种变化、修改、替换和变型。例如,在落在本发明保护范围的同时,本领域的普通技术人员将容易理解上述优选实施例的部件、材料和构造可以被改变、替换以及结合来形成甚至更多的MEMS封装方案。
但是,本发明的应用范围不局限于说明书中描述的特定实施例的工艺、机构、制造、物质组成、手段、方法及步骤。从本发明的公开内容,作为本领域的普通技术人员将容易地理解,对于目前已存在或者以后即将开发出的工艺、机构、制造、物质组成、手段、方法或步骤,其中它们执行与本发明描述的对应实施例大体相同的功能或者获得大体相同的结果,依照本发明可以对它们进行应用。因此。本发明所附权利要求旨在将这些工艺、机构、制造、物质组成、手段、方法或步骤包含在其保护范围内。
Claims (15)
1、一种微机电系统,包括:
具有多个第一端子的微机电系统器件;和
包括至少一个穿透通孔和至少一个微电子器件以及多个第二端子的封盖部;
其中所述微机电系统器件和所述封盖部通过所述多个第一端子和所述多个第二端子电连接。
2、如权利要求1所述的微机电系统,还包括形成在所述微机电系统器件和所述封盖部之间的密封环,所述密封环围住所述微机电系统的突出传感器部分。
3、如权利要求1所述的微机电系统,它是从包括射频转换器、扩音器、扬声器、惯性传感器、压力传感器、射频可调装置、继电器及其任意组合的组中选择的,其中所述封盖部包括数字集成电路、模拟集成电路、微机电系统控制集成电路、复合信号集成电路、微处理器、存储器集成电路、具有片上系统构造的集成电路、微波传输带滤波器、微波传输带谐振器中的至少一个及其任意组合,其中所述封盖部包括从半导体材料、陶瓷、玻璃、塑料及其任意组合的组中选择的材料。
4、如权利要求1所述的微机电系统,其中所述至少一个穿透通孔的间距显著大于所述多个第一端子的间距。
5、如权利要求1所述的微机电系统,还包括封装基底,其中所述微机电系统器件、所述封盖部和所述封装基底以堆叠方式设置,以形成封装上系统的结构。
6、如权利要求1所述的微机电系统,还包括印刷电路板,其中所述微机电系统器件、所述封盖部和所述印刷电路板以堆叠方式设置,以形成板上系统的结构。
7、一种设备,包括:
微机电系统器件,所述微机电系统器件包括至少一个电子电路,所述至少一个电子电路电连接到所述微机电系统器件的第一表面上的至少一个端子上;
封盖部,所述封盖部位于所述微机电系统器件的下方,并包括至少一个半导体器件,其中所述至少一个半导体器件通过所述微机电系统器件上的所述至少一个端子电连接到所述微机电系统器件中的所述至少一个电子电路上,并且其中所述至少一个半导体器件还通过所述封盖部中的内部金属互连线和至少一个通孔电连接到所述封盖部的第一连接面上的至少一个接触部上;以及
位于所述封盖部下方的基底,所述基底包括位于支撑面上的至少一个接触部。
8、如权利要求7所述的设备,还包括形成在所述微机电器件和所述封盖部之间的空间中的封套,所述封套由密封环密封并收容所述微机电器件的突出传感器部分。
9、如权利要求7所述的设备,其中所述微机电系统中的所述至少一个电子电路通过所述封盖部中的内部金属互连线和所述至少一个穿透通孔连接到所述支撑面上的所述至少一个接触部。
10、如权利要求7所述的设备,其中所述至少一个穿透通孔的间距显著大于所述微机电系统器件的所述第一表面上所述至少一个端子的间距。
11、如权利要求7所述的设备,还包括从所述微机电系统器件的一部分第二表面上方突出的传感器部分。
12、如权利要求7所述的设备,还包括位于所述封盖部和所述支撑面之间的嵌入部,所述嵌入部将所述封盖部的第一连接面上的所述至少一个接触部与所述基底支持面上的所述至少一个接触部匹配。
13、如权利要求7所述的设备,其中所述基底为封装基底,所述封装基底包括与所述封装基底上所述至少一个接触部连接的多个封装引线;或者所述基底为包括至少一个电路元件的印刷电路板,所述印刷电路板中的至少一个电路元件通过所述印刷电路板中的金属迹线电连接到所述封盖部的所述至少一个半导体器件。
14、如权利要求7所述的设备,还包括位于所述微机电系统器件的第二表面上的至少一个焊垫,位于所述封盖部第二连接面上的至少一个焊垫以及位于所述支撑面上的至少一个焊垫;其中所述焊垫通过接合引线电连接。
15、如权利要求7所述的设备,其中所述封盖部具有多封盖层结构,并且每个所述封盖层包括至少一个穿透通孔、数字集成电路、模拟集成电路、微机电系统控制集成电路、复合信号集成电路、微处理器、存储器集成电路、具有片上系统构造的集成电路、微波传输带过滤器、微波传输带谐振器中的至少一个及其任意组合,其中所述多封盖层中的所述至少一个穿透通孔的间距可以不同。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2517408P | 2008-01-31 | 2008-01-31 | |
US61/025,174 | 2008-01-31 | ||
US12/269,298 | 2008-11-12 | ||
US12/269,298 US20090194829A1 (en) | 2008-01-31 | 2008-11-12 | MEMS Packaging Including Integrated Circuit Dies |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101519183A true CN101519183A (zh) | 2009-09-02 |
CN101519183B CN101519183B (zh) | 2011-09-21 |
Family
ID=40930820
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009100019632A Active CN101519183B (zh) | 2008-01-31 | 2009-01-24 | 具有集成电路管芯的微机电系统封装 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20090194829A1 (zh) |
CN (1) | CN101519183B (zh) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102452636A (zh) * | 2010-10-15 | 2012-05-16 | 台湾积体电路制造股份有限公司 | 用于透明衬底的处理层 |
CN102680158A (zh) * | 2011-03-09 | 2012-09-19 | 刘胜 | 基于硅通孔技术的集成式微型压力流量传感器 |
CN103221331A (zh) * | 2010-09-18 | 2013-07-24 | 快捷半导体公司 | 用于微机电系统的密封封装 |
CN103513059A (zh) * | 2012-06-20 | 2014-01-15 | 意法半导体股份有限公司 | 具有通过保护帽进行信号路由的微机电设备及控制微机电设备的方法 |
CN103958393A (zh) * | 2011-11-10 | 2014-07-30 | 株式会社优利电子 | Mems传感器封装及其方法 |
CN104507854A (zh) * | 2012-07-31 | 2015-04-08 | 索泰克公司 | 形成基板同侧包括mems设备及集成电路的半导体结构的方法以及相关结构和设备 |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US9095072B2 (en) | 2010-09-18 | 2015-07-28 | Fairchild Semiconductor Corporation | Multi-die MEMS package |
US9246018B2 (en) | 2010-09-18 | 2016-01-26 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
CN105571771A (zh) * | 2014-11-05 | 2016-05-11 | 株式会社万都 | 压力传感器 |
US9352961B2 (en) | 2010-09-18 | 2016-05-31 | Fairchild Semiconductor Corporation | Flexure bearing to reduce quadrature for resonating micromachined devices |
CN105846841A (zh) * | 2016-03-21 | 2016-08-10 | 中国电子科技集团公司第五十五研究所 | 硅基三维立体集成接收前端 |
US9425328B2 (en) | 2012-09-12 | 2016-08-23 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
US9444404B2 (en) | 2012-04-05 | 2016-09-13 | Fairchild Semiconductor Corporation | MEMS device front-end charge amplifier |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
US9618361B2 (en) | 2012-04-05 | 2017-04-11 | Fairchild Semiconductor Corporation | MEMS device automatic-gain control loop for mechanical amplitude drive |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
CN107748299A (zh) * | 2017-10-16 | 2018-03-02 | 河南汇纳科技有限公司 | 一种单芯片集成多环境兼容性传感器 |
CN108198803A (zh) * | 2018-01-15 | 2018-06-22 | 宁波大学 | 一种基于硅通孔技术的三维带通滤波器 |
US10060757B2 (en) | 2012-04-05 | 2018-08-28 | Fairchild Semiconductor Corporation | MEMS device quadrature shift cancellation |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
CN108925039A (zh) * | 2018-06-25 | 2018-11-30 | 维沃移动通信有限公司 | 移动终端、电路板组件及电路板组件的制备方法 |
CN112456430A (zh) * | 2020-12-11 | 2021-03-09 | 重庆忽米网络科技有限公司 | 一种集成式多功能微机电传感器 |
Families Citing this family (196)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7955885B1 (en) | 2009-01-09 | 2011-06-07 | Integrated Device Technology, Inc. | Methods of forming packaged micro-electromechanical devices |
US8609466B2 (en) * | 2009-07-15 | 2013-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Cap and substrate electrical connection at wafer level |
US8710599B2 (en) * | 2009-08-04 | 2014-04-29 | Fairchild Semiconductor Corporation | Micromachined devices and fabricating the same |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10157909B2 (en) | 2009-10-12 | 2018-12-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10043781B2 (en) | 2009-10-12 | 2018-08-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11984445B2 (en) | 2009-10-12 | 2024-05-14 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US10366970B2 (en) | 2009-10-12 | 2019-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
DE102010006132B4 (de) * | 2010-01-29 | 2013-05-08 | Epcos Ag | Miniaturisiertes elektrisches Bauelement mit einem Stapel aus einem MEMS und einem ASIC |
US8482111B2 (en) | 2010-07-19 | 2013-07-09 | Tessera, Inc. | Stackable molded microelectronic packages |
US10217667B2 (en) | 2011-06-28 | 2019-02-26 | Monolithic 3D Inc. | 3D semiconductor device, fabrication method and system |
WO2012027274A2 (en) * | 2010-08-23 | 2012-03-01 | The Regents Of The University Of California | Compositions and methods for imaging |
US9006846B2 (en) | 2010-09-20 | 2015-04-14 | Fairchild Semiconductor Corporation | Through silicon via with reduced shunt capacitance |
US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10290682B2 (en) | 2010-10-11 | 2019-05-14 | Monolithic 3D Inc. | 3D IC semiconductor device and structure with stacked memory |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11984438B2 (en) | 2010-10-13 | 2024-05-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US8569861B2 (en) | 2010-12-22 | 2013-10-29 | Analog Devices, Inc. | Vertically integrated systems |
FR2969592B1 (fr) * | 2010-12-23 | 2013-02-08 | Commissariat Energie Atomique | Dispositif pour connecter des nano-objets a des systèmes électriques externes, et procédé de fabrication du dispositif |
JPWO2012124282A1 (ja) * | 2011-03-11 | 2014-07-17 | パナソニック株式会社 | センサ |
US8384168B2 (en) | 2011-04-21 | 2013-02-26 | Freescale Semiconductor, Inc. | Sensor device with sealing structure |
US8476087B2 (en) | 2011-04-21 | 2013-07-02 | Freescale Semiconductor, Inc. | Methods for fabricating sensor device package using a sealing structure |
KR101128063B1 (ko) | 2011-05-03 | 2012-04-23 | 테세라, 인코포레이티드 | 캡슐화 층의 표면에 와이어 본드를 구비하는 패키지 적층형 어셈블리 |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
US8836136B2 (en) | 2011-10-17 | 2014-09-16 | Invensas Corporation | Package-on-package assembly with wire bond vias |
WO2013062533A1 (en) * | 2011-10-25 | 2013-05-02 | Intel Corporation | Interposer for hermetic sealing of sensor chips and for their integration with integrated circuit chips |
US9368429B2 (en) | 2011-10-25 | 2016-06-14 | Intel Corporation | Interposer for hermetic sealing of sensor chips and for their integration with integrated circuit chips |
KR101426584B1 (ko) * | 2011-12-09 | 2014-08-06 | 주식회사 만도 | 레이더 장치 및 그 조립 방법 |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
US8835228B2 (en) | 2012-05-22 | 2014-09-16 | Invensas Corporation | Substrate-less stackable package with wire-bond interconnect |
ITTO20120623A1 (it) * | 2012-07-13 | 2014-01-14 | St Microelectronics Srl | Assemblaggio impilato di un dispositivo integrato mems avente un ridotto spessore |
US9502390B2 (en) | 2012-08-03 | 2016-11-22 | Invensas Corporation | BVA interposer |
JP2014054718A (ja) | 2012-09-14 | 2014-03-27 | Seiko Epson Corp | 電子装置 |
US8796829B2 (en) * | 2012-09-21 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal dissipation through seal rings in 3DIC structure |
US9490190B2 (en) | 2012-09-21 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Thermal dissipation through seal rings in 3DIC structure |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US10115663B2 (en) | 2012-12-29 | 2018-10-30 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US20140210019A1 (en) * | 2013-01-30 | 2014-07-31 | Invensense, Inc. | Low-cost package for integrated mems sensors |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9640531B1 (en) * | 2014-01-28 | 2017-05-02 | Monolithic 3D Inc. | Semiconductor device, structure and methods |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
US9021414B1 (en) | 2013-04-15 | 2015-04-28 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
DE102013104407B4 (de) * | 2013-04-30 | 2020-06-18 | Tdk Corporation | Auf Waferlevel herstellbares Bauelement und Verfahren zur Herstellung |
US9167710B2 (en) | 2013-08-07 | 2015-10-20 | Invensas Corporation | Embedded packaging with preformed vias |
US20150076714A1 (en) | 2013-09-16 | 2015-03-19 | Invensas Corporation | Microelectronic element with bond elements to encapsulation surface |
US9583456B2 (en) | 2013-11-22 | 2017-02-28 | Invensas Corporation | Multiple bond via arrays of different wire heights on a same substrate |
US9379074B2 (en) | 2013-11-22 | 2016-06-28 | Invensas Corporation | Die stacks with one or more bond via arrays of wire bond wires and with one or more arrays of bump interconnects |
US9583411B2 (en) | 2014-01-17 | 2017-02-28 | Invensas Corporation | Fine pitch BVA using reconstituted wafer with area array accessible for testing |
US10297586B2 (en) | 2015-03-09 | 2019-05-21 | Monolithic 3D Inc. | Methods for processing a 3D semiconductor device |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381326B2 (en) | 2014-05-28 | 2019-08-13 | Invensas Corporation | Structure and method for integrated circuits packaging with increased density |
US9888579B2 (en) | 2015-03-05 | 2018-02-06 | Invensas Corporation | Pressing of wire bond wire tips to provide bent-over tips |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US9502372B1 (en) | 2015-04-30 | 2016-11-22 | Invensas Corporation | Wafer-level packaging using wire bond wires in place of a redistribution layer |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
CN108401468A (zh) | 2015-09-21 | 2018-08-14 | 莫诺利特斯3D有限公司 | 3d半导体器件和结构 |
US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US9490222B1 (en) | 2015-10-12 | 2016-11-08 | Invensas Corporation | Wire bond wires for interference shielding |
US10490528B2 (en) * | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US10332854B2 (en) | 2015-10-23 | 2019-06-25 | Invensas Corporation | Anchoring structure of fine pitch bva |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US12016181B2 (en) | 2015-10-24 | 2024-06-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11991884B1 (en) | 2015-10-24 | 2024-05-21 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10181457B2 (en) | 2015-10-26 | 2019-01-15 | Invensas Corporation | Microelectronic package for wafer-level chip scale packaging with fan-out |
US9911718B2 (en) | 2015-11-17 | 2018-03-06 | Invensas Corporation | ‘RDL-First’ packaged microelectronic device for a package-on-package device |
US9984992B2 (en) | 2015-12-30 | 2018-05-29 | Invensas Corporation | Embedded wire bond wires for vertical integration with separate surface mount and wire bond mounting surfaces |
WO2018007641A1 (en) * | 2016-07-08 | 2018-01-11 | Robert Bosch Gmbh | Hybrid galvanic connection system for a mems sensor device package |
US9935075B2 (en) | 2016-07-29 | 2018-04-03 | Invensas Corporation | Wire bonding method and apparatus for electromagnetic interference shielding |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
KR20180046762A (ko) * | 2016-10-28 | 2018-05-09 | 삼성전자주식회사 | 생체 센서를 포함하는 전자 장치 |
US10299368B2 (en) | 2016-12-21 | 2019-05-21 | Invensas Corporation | Surface integrated waveguides and circuit structures therefor |
US10192808B1 (en) * | 2017-07-06 | 2019-01-29 | United Microelectronics Corp. | Semiconductor structure |
US10730743B2 (en) | 2017-11-06 | 2020-08-04 | Analog Devices Global Unlimited Company | Gas sensor packages |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11587839B2 (en) | 2019-06-27 | 2023-02-21 | Analog Devices, Inc. | Device with chemical reaction chamber |
JP2024518353A (ja) * | 2021-04-30 | 2024-05-01 | コルボ ユーエス インコーポレイテッド | 垂直に積層されたmemsデバイスおよびコントローラーデバイス |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5977640A (en) * | 1998-06-26 | 1999-11-02 | International Business Machines Corporation | Highly integrated chip-on-chip packaging |
US7170155B2 (en) * | 2003-06-25 | 2007-01-30 | Intel Corporation | MEMS RF switch module including a vertical via |
JP4269806B2 (ja) * | 2003-06-30 | 2009-05-27 | カシオ計算機株式会社 | 半導体装置およびその製造方法 |
US6936918B2 (en) * | 2003-12-15 | 2005-08-30 | Analog Devices, Inc. | MEMS device with conductive path through substrate |
US7095105B2 (en) * | 2004-03-23 | 2006-08-22 | Texas Instruments Incorporated | Vertically stacked semiconductor device |
JP3875240B2 (ja) * | 2004-03-31 | 2007-01-31 | 株式会社東芝 | 電子部品の製造方法 |
US7382056B2 (en) * | 2004-04-29 | 2008-06-03 | Sychip Inc. | Integrated passive devices |
US7183622B2 (en) * | 2004-06-30 | 2007-02-27 | Intel Corporation | Module integrating MEMS and passive components |
ATE445232T1 (de) * | 2004-07-13 | 2009-10-15 | Nxp Bv | Elektronische vorrichtung mit integrierter schaltung |
JP4813035B2 (ja) * | 2004-10-01 | 2011-11-09 | 新光電気工業株式会社 | 貫通電極付基板の製造方法 |
US7202560B2 (en) * | 2004-12-15 | 2007-04-10 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Wafer bonding of micro-electro mechanical systems to active circuitry |
KR100611204B1 (ko) * | 2005-05-10 | 2006-08-10 | 삼성전자주식회사 | 멀티 스택 패키징 칩 및 그 제조방법 |
JP4889974B2 (ja) * | 2005-08-01 | 2012-03-07 | 新光電気工業株式会社 | 電子部品実装構造体及びその製造方法 |
TWI315295B (en) * | 2006-12-29 | 2009-10-01 | Advanced Semiconductor Eng | Mems microphone module and method thereof |
-
2008
- 2008-11-12 US US12/269,298 patent/US20090194829A1/en not_active Abandoned
-
2009
- 2009-01-24 CN CN2009100019632A patent/CN101519183B/zh active Active
Cited By (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9278845B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope Z-axis electrode structure |
US9856132B2 (en) | 2010-09-18 | 2018-01-02 | Fairchild Semiconductor Corporation | Sealed packaging for microelectromechanical systems |
US9156673B2 (en) | 2010-09-18 | 2015-10-13 | Fairchild Semiconductor Corporation | Packaging to reduce stress on microelectromechanical systems |
US9246018B2 (en) | 2010-09-18 | 2016-01-26 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
US9586813B2 (en) | 2010-09-18 | 2017-03-07 | Fairchild Semiconductor Corporation | Multi-die MEMS package |
US10050155B2 (en) | 2010-09-18 | 2018-08-14 | Fairchild Semiconductor Corporation | Micromachined monolithic 3-axis gyroscope with single drive |
US9352961B2 (en) | 2010-09-18 | 2016-05-31 | Fairchild Semiconductor Corporation | Flexure bearing to reduce quadrature for resonating micromachined devices |
US9095072B2 (en) | 2010-09-18 | 2015-07-28 | Fairchild Semiconductor Corporation | Multi-die MEMS package |
CN103221331A (zh) * | 2010-09-18 | 2013-07-24 | 快捷半导体公司 | 用于微机电系统的密封封装 |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
CN103221331B (zh) * | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电系统的密封封装 |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
CN102452636A (zh) * | 2010-10-15 | 2012-05-16 | 台湾积体电路制造股份有限公司 | 用于透明衬底的处理层 |
CN102680158A (zh) * | 2011-03-09 | 2012-09-19 | 刘胜 | 基于硅通孔技术的集成式微型压力流量传感器 |
CN103958393A (zh) * | 2011-11-10 | 2014-07-30 | 株式会社优利电子 | Mems传感器封装及其方法 |
CN103958393B (zh) * | 2011-11-10 | 2016-08-17 | 株式会社优利电子 | Mems传感器封装及其方法 |
US9533875B2 (en) | 2011-11-10 | 2017-01-03 | U Electronics Co., Ltd. | MEMS sensor packaging and method thereof |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
US9618361B2 (en) | 2012-04-05 | 2017-04-11 | Fairchild Semiconductor Corporation | MEMS device automatic-gain control loop for mechanical amplitude drive |
US10060757B2 (en) | 2012-04-05 | 2018-08-28 | Fairchild Semiconductor Corporation | MEMS device quadrature shift cancellation |
US9444404B2 (en) | 2012-04-05 | 2016-09-13 | Fairchild Semiconductor Corporation | MEMS device front-end charge amplifier |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
US11274036B2 (en) | 2012-06-20 | 2022-03-15 | Stmicroelectronics S.R.L. | Microelectromechanical device with signal routing through a protective cap |
US9718675B2 (en) | 2012-06-20 | 2017-08-01 | Stmicroelectronics S.R.L. | Microelectromechanical device with signal routing through a protective cap |
CN103513059A (zh) * | 2012-06-20 | 2014-01-15 | 意法半导体股份有限公司 | 具有通过保护帽进行信号路由的微机电设备及控制微机电设备的方法 |
CN104507854A (zh) * | 2012-07-31 | 2015-04-08 | 索泰克公司 | 形成基板同侧包括mems设备及集成电路的半导体结构的方法以及相关结构和设备 |
US9511996B2 (en) | 2012-07-31 | 2016-12-06 | Soitec | Methods of forming semiconductor structures including MEMS devices and integrated circuits on common sides of substrates, and related structures and devices |
US9425328B2 (en) | 2012-09-12 | 2016-08-23 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
US9802814B2 (en) | 2012-09-12 | 2017-10-31 | Fairchild Semiconductor Corporation | Through silicon via including multi-material fill |
CN105571771A (zh) * | 2014-11-05 | 2016-05-11 | 株式会社万都 | 压力传感器 |
CN105571771B (zh) * | 2014-11-05 | 2019-01-04 | 株式会社万都 | 压力传感器 |
CN105846841B (zh) * | 2016-03-21 | 2018-08-28 | 中国电子科技集团公司第五十五研究所 | 硅基三维立体集成接收前端 |
CN105846841A (zh) * | 2016-03-21 | 2016-08-10 | 中国电子科技集团公司第五十五研究所 | 硅基三维立体集成接收前端 |
CN107748299A (zh) * | 2017-10-16 | 2018-03-02 | 河南汇纳科技有限公司 | 一种单芯片集成多环境兼容性传感器 |
CN108198803A (zh) * | 2018-01-15 | 2018-06-22 | 宁波大学 | 一种基于硅通孔技术的三维带通滤波器 |
CN108198803B (zh) * | 2018-01-15 | 2023-05-09 | 宁波大学 | 一种基于硅通孔技术的三维带通滤波器 |
CN108925039A (zh) * | 2018-06-25 | 2018-11-30 | 维沃移动通信有限公司 | 移动终端、电路板组件及电路板组件的制备方法 |
CN112456430A (zh) * | 2020-12-11 | 2021-03-09 | 重庆忽米网络科技有限公司 | 一种集成式多功能微机电传感器 |
CN112456430B (zh) * | 2020-12-11 | 2021-11-09 | 重庆忽米网络科技有限公司 | 一种集成式多功能微机电传感器 |
Also Published As
Publication number | Publication date |
---|---|
US20090194829A1 (en) | 2009-08-06 |
CN101519183B (zh) | 2011-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101519183B (zh) | 具有集成电路管芯的微机电系统封装 | |
US10861842B2 (en) | Electronic system having increased coupling by using horizontal and vertical communication channels | |
CN103579169B (zh) | 半导体封装及半导体封装基座的制造方法 | |
US9553076B2 (en) | Stackable molded microelectronic packages with area array unit connectors | |
US7884464B2 (en) | 3D electronic packaging structure having a conductive support substrate | |
CN107799499A (zh) | 半导体封装结构及其制造方法 | |
KR101731198B1 (ko) | 반도체 패키지 및 반도체 패키지를 위한 베이스를 제조하기 위한 방법 | |
CN101359608B (zh) | 集成电路封装及其形成方法、晶圆级集成电路封装结构 | |
WO1995000972A1 (en) | Multilayer ltcc tub architecture for hermetically sealing semiconductor die, external electrical access for which is provided by way of sidewall recesses | |
KR20220084107A (ko) | 마이크로전자 디바이스 조립체 및 패키지 및 관련 방법 및 시스템 | |
JP2012253392A (ja) | モールド再構成ウェハーを利用したスタックパッケージ及びその製造方法 | |
CN101097899A (zh) | 具有嵌入式无源元件的半导体封装及其制造方法 | |
EP3104410B1 (en) | Multi-chip module, on-board computer, sensor interface substrate, and multi-chip module manufacturing method | |
CN110335859A (zh) | 一种基于tsv的多芯片的封装结构及其制备方法 | |
CN102790030A (zh) | 具有偏置钝化以减少电迁移的半导体结构 | |
CN110634848A (zh) | 一种多芯片堆叠封装结构及其制作方法 | |
KR20060058953A (ko) | 패키지된 반도체 다이 및 그 제조방법 | |
CN105789174B (zh) | 半导体封装及半导体封装基座的制造方法 | |
KR20100050976A (ko) | 반도체 패키지 및 그의 제조 방법 | |
CN102856264A (zh) | 半导体封装及其半导体封装制作方法 | |
JP3850712B2 (ja) | 積層型半導体装置 | |
CN210136865U (zh) | 一种晶圆级封装结构 | |
US10361146B2 (en) | Semiconductor package with multiple stacked leadframes and a method of manufacturing the same | |
KR20120031689A (ko) | 반도체 패키지 및 이의 제조방법 | |
CN117790430A (zh) | 一种芯片堆叠结构、芯片堆叠结构的形成方法及相关设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |