CN101473415A - 气体喷射以均匀地蚀刻基片 - Google Patents

气体喷射以均匀地蚀刻基片 Download PDF

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CN101473415A
CN101473415A CNA2007800232577A CN200780023257A CN101473415A CN 101473415 A CN101473415 A CN 101473415A CN A2007800232577 A CNA2007800232577 A CN A2007800232577A CN 200780023257 A CN200780023257 A CN 200780023257A CN 101473415 A CN101473415 A CN 101473415A
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哈米特·辛格
戴维·寇奥珀勃格
瓦尔德·瓦赫迪
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Abstract

一种具有提高的关键尺寸均一性的蚀刻半导体基片的方法包括在电感耦合等离子蚀刻室中基片支撑件上支撑半导体基片；提供第一蚀刻气体该半导体基片之上的中间区域；提供包括至少一种含硅气体的第二气体至该半导体基片之上围绕该中间区域的边缘区域，其中该第二气体中硅浓度大于该第一蚀刻气体中的硅浓度；由该第一蚀刻气体和第二气体生成等离子；以及等离子蚀刻该半导体基片的暴露表面。

Description

气体喷射以均匀地蚀刻基片
发明内容
[0001]提供一种具有提高的关键尺寸均一性的蚀刻半导体基片的方法。该方法包括在等离子蚀刻室中基片支撑件上支撑半导体基片；提供第一蚀刻气体至该半导体基片之上的中间区域；提供包括至少一种含硅气体的第二气体至该半导体基片之上围绕该中间区域的边缘区域，其中该第二气体中的硅浓度大于该第一蚀刻气体中的硅浓度；由该第一蚀刻气体和第二气体生成等离子；以及等离子蚀刻该半导体基片的暴露表面。
附图说明
[0002]图1a-b示出两区域喷射器的细节；
[0003]图2示出用于边缘气体喷射的等离子室的一个实施方式；
[0004]图3是等离子蚀刻室中的SiClx径向浓度曲线的图解说明，其中利用由Cl2形成的等离子蚀刻半导体基片上的硅层；以及
[0005]图4是等离子蚀刻室中的SiClx径向浓度曲线的图解说明，其中利用由Cl2形成的等离子蚀刻半导体上的硅层以及将含硅气体提供到该半导体基片之上的边缘区域。
具体实施方式
[0006]在基于半导体的产品(如集成电路)制造过程中，蚀刻和/或沉积步骤可用于在半导体基片(如晶片)上建立或去除层。传统的蚀刻过程包括使用一种或多种蚀刻气体，其激发为等离子态以实现材料层的等离子蚀刻。待蚀刻的特征包括，例如，开口、过孔、沟槽和栅结构。
[0007]许多等离子蚀刻应用依赖于钝化层的生成以获得所需要的特征形貌。形貌控制的主要机制包括蚀刻和沉积反应的平衡。蚀刻反应通常直接由反应室参数(如输入功率、压力以及气体流量)来控制。在硅晶片的等离子蚀刻中，蚀刻反应产物是主要的沉积源，从而间接控制沉积机制。
[0008]关键尺寸(CD)是最小的几何特征(例如，互连线、触电和沟槽等的宽度)的尺寸，这些特征可通过使用已知的技术在半导体器件/电路制造过程中形成。当晶片中间的特征的关键尺寸与靠近晶片边缘的特征的关键尺寸相同时，就提供了关键尺寸均一性。非常希望关键尺寸均一性能达到几乎完美的程度，就是在晶片中心附近蚀刻的特征基本上与靠近该晶片边缘蚀刻的同等的特征一致，否则正在制造的集成电路的电气特性将会偏离超过预期。随着晶片直径大小的每次增加，确保跨越越来越大的晶片所形成的集成电路的均一性问题变得更加困难。
[0009]在蚀刻应用中，使用各种蚀刻气体化学制剂。例如，当使用HBr-O2蚀刻气体化学制剂，该钝化层主要由SixBrxOz构成。对于Cl2-O2蚀刻气体化学制剂，该钝化层主要是由SixClyOz构成。该钝化层的其他元素可包括N、C、H和F。此外，作为蚀刻硅晶片和/或室材料(如石英部件)的结果，该钝化层中结合了挥发性硅蚀刻副产物。
[0010]由于硅源(如硅晶片和/或室材料)的蚀刻导致硅混在钝化层中。这样的硅源是次级产品，其不直接由该蚀刻气体化学制剂控制。此外，当该挥发性硅蚀刻副产物从该晶片表面向真空排出口输送时，有一定的可能该含硅副产物沉积在该晶片表面上。进而，该挥发性硅蚀刻副产物可在该等离子区域分离为反应剂，这时有更大的可能该含硅副产物在该晶片表面沉积。该含硅副产物在该晶片表面沉积可导致纵贯该晶片不一致的硅副产物浓度并且导致蚀刻的特征关键尺寸不一致。
[0011]所提供的是一种具有提高的关键尺寸均一性的蚀刻半导体基片方法。该方法包括在等离子蚀刻室中的基片支撑件上支撑半导体基片；提供第一蚀刻气体至该半导体基片之上的中间区域；提供包括至少一种含硅气体的第二气体至该半导体基片之上围绕该中间区域的边缘区域，其中该第二气体中的硅浓度大于该第一蚀刻气体中的硅浓度；由该第一蚀刻气体和第二气体生成等离子；以及等离子蚀刻该半导体基片的暴露表面。优选地，在该半导体基片中间附近蚀刻的特征基本上与靠近该半导体基片边缘蚀刻的同等的特征一致。
[0012]示范性的含硅气体包括，例如，SiCl4，SiHCl3，SiH2Cl2，SiH3Cl，SiH4，Si2H6，SiH3CH3，SiH(CH3)3，SiF4，SiBr4，四乙基原硅酸盐(tetraethyl orthosilicate)(TEOS)，或其混合物。该第二气体，其包括至少一种含硅气体，可进一步包括：(1)惰性载体气体，例如，He，Ne，Ar，Kr，Xe，或其混合物；(2)蚀刻剂气体，例如，Cl2，CxFy，HBr，CxFyHz，SF6，HCl，或其混合物，例如，SF6和CH2F2的混合物；和/或(3)钝化气体，例如，O2，N2，或其混合物。
[0013]该第一蚀刻气体可以或可以不包含硅。该方法可进一步包括调节：(1)调节施加到该边缘区域的第二气体的量；(2)调节施加到该边缘区域的硅的量；和/或(3)该第二气体中硅的浓度与该第一蚀刻气体中硅的浓度的比。
[0014]该半导体基片的暴露表面可包括硅层，其可以是在掩模(如氮化硅、氧化硅或氮氧化硅掩模层)下方的单晶硅晶片的一部分。或者，该硅层可以是基片(如单晶硅晶片)上外延生长层、张紧的(strained)硅层或硅锗层。该硅层可包括硅晶片上的多晶硅层，其中该多晶硅层位于下面的栅氧化层和上面的硬的或软的掩模层之间，如氮化硅，氧化硅，或氮氧化硅掩模层或光刻胶。或者，该所公开的蚀刻方法适用于额外的蚀刻应用，如蚀刻多晶硅栅极、金属栅极、高介电常数(K)、W和WSi栅极以及隔板(spacer)。
[0015]例如，对于300mm晶片，所蚀刻的特征优选的小于50nm(例如，45nm，25nm，18nm等)以及具有小于或等于1.5nm的3σ不均一性。
[0016]该等离子优选地是高密度等离子，其在变压器耦合等离子(TCPTM)反应器中产生，该反应器可从Lam Research Corporation得到，其也称为电感耦合等离子(ICP)反应器。
[0017]当前公开的方法优选是在电感耦合等离子反应器中执行，该反应器通过连接到该反应器壁中的出口的真空泵保持在所需要的真空度。通过将气体从气体源提供至在介电窗下方周围的空间可将蚀刻气体提供至喷头或喷射器装置。可通过从RF源提供RF能量至该反应器顶部的外部RF天线(如平面或非平面线圈，其具有在该介电窗外部的一个或多个匝数)而在该反应器中产生高密度等离子。该等离子产生源可以是模块化安装装置的一部分，其以真空密封的方式可移除地安装在该反应器的上端。
[0018]晶片可以在该反应器内支撑在基片支撑件如悬臂卡盘装置上，其由该反应器侧壁上的模块化安装装置可移除地支撑。这样的基片支撑件是在以悬臂方式安装的支撑臂的一端，从而整个基片支撑件/支撑臂组件可以通过移动该组件通过该反应器侧壁中的开口而移除该反应器。该基片支撑件可包括夹紧装置，如静电卡盘，以及该基片可由介电聚焦环围绕。该卡盘可包括RF偏置电极，用以在蚀刻工艺过程中向该基片施加RF。由气体源施加的蚀刻气体可流过该窗和下面的气体分配板之间的通道，并且通过该气体分配板中的气体出口进入该室内部。该反应器还可包括从该气体分配板延伸出的加热的衬垫。
[0019]或者，蚀刻气体可由安装在介电窗中的多区域气体喷射器提供，如普通转让美国专利申请No.2003/0070620A1中所公开，特此通过引用结合其全部公开内容。图1a-b示出多区域气体喷射器，包括同轴(on-axis)喷射出口124以提供工艺气体至中间区域，工艺气体在垂直于该基片表面的轴线方向提供到该区域，以及离轴(off-axis)喷射出口126以提供工艺气体至边缘区域，工艺气体在不垂直于该基片的倾斜方向提供到该区域。为了控制每个线路的气体流量，流量控制器(如各种流量限制装置136a，736b)可设置在每个分开的供应不同喷射区域的气体线路中。这些装置136a、136b可以手动设置或者通过合适的电子控制自动运行。通过独立地改变这些流动限制设备136a、136b的设置，可以改变通过这两个出口124、126的流量比。另一种实现包括多个出口和可变流量限制阀和/或固定的限流器和阀门的网络，这将使得到每个喷射区域总的电导能够调节至一个或多个预先设定的可动态控制的值。
[0020]图1a中，该中间气体喷射出口124示为中心孔125的延续。例如，该孔125的上端可以由窗127密封，其布置为与监视设备129(如灯、光谱仪、光纤和透镜装置)相连，如美国专利No.6,052,176所公开的，特此通过引用结合其全部公开内容。在这样的装置中，该同轴出口124优选地具有比该离轴出口126大的直径。图1b中，该同轴出口124具有比该孔125小的直径。该同轴出口124和离轴出口126的相对尺寸可以选择为实现所需的气体流量分布。例如，该离轴出口126的总的横截面积小于、等于或大于该同轴出口124的总的横截面积。
[0021]对于本领域技术人员来说，显然，各种气体的流率将取决于该等离子反应器的类型、功率设定、该反应器中的真空度、该等离子源的分离率等因素。
[0022]该反应器压力优选保持在适于维持该反应器中等离子的水平。通常，过低的反应器压力会导致等离子熄灭，反之在高密度蚀刻反应器中，过高的反应器压力会导致蚀刻停止问题。对于高密度等离子反应器，该反应器的压力优选地低于100mTorr。用于在TCPTM反应器中产生高密度等离子的一般的工艺包括450W功率、60VRF偏置、5到70mT压力以及50-1000sccm的气体流率。由于在经历蚀刻的该半导体基片的等离子限制，在该基片表面的真空度会高于为该反应器设定的真空度。
[0023]支撑经历蚀刻的半导体基片的基片支撑件优选地充分冷却该基片以防止有害的副反应，如该基片上的任何光刻胶的烧毁和不希望的反应气体基团的形成。在高密度等离子反应器中，在该基片支撑件中循环流体将基片温度保持在-10到+80℃是足够的。该基片支撑件可包括用于在基片处理过程中提供RF偏置至该基片的底部电极和用于夹紧该基片的ESC，。例如，该基片可包括硅晶片，其以静电方式夹紧并且通过以所需的压力在该晶片和该ESC的顶部表面之间提供氦气(He)来控制温度。为了将该晶片保持在所需的温度，在该晶片和该卡盘之间的空间内，He可保持在2到30Torr的压力。
[0024]特定的气体化学制剂可以通过该反应器顶部的介电窗、侧壁(例如靠近该介电窗)、通过卡盘或通过基片夹具的外径喷射该气体而提供至基片的边缘。特别地，参考图2，其示出可用于边缘气体喷射的等离子室的实施例，特定的气体化学制剂由喷射器20通过等离子室的侧壁提供并且沿流线21流动，而其他气体化学制剂由喷头喷嘴23通过等离子室的顶棚提供并且沿流线24流动。尽管上面描述了用于在基片边缘提供更多的特定气体化学制剂的气体喷射装置的各种示例，但是能够在基片边缘提供比基片中心更多含硅气体的任何合适的气体供应装置可用于关于图3和4描述的工艺。
[0025]图3是等离子蚀刻室中SiClx径向浓度曲线的示意性说明，其中半导体基片上的硅层利用由Cl2形成的等离子蚀刻。由于蚀刻反应导致的SiClx浓度310在该半导体基片320和反应器中心330达到峰值。随着半径增加，SiClx物质的浓度由于SiClx物质的排出340和SiClx物质的损失而降低到室壁350沉积反应。
[0026]图4是等离子蚀刻室中SiClx径向浓度曲线的示意说明，其中半导体基片硅层利用由Cl2形成的等离子蚀刻并且含硅气体提供到该等离子蚀刻室的边缘区域。类似图3，由于蚀刻反应410，SiClx浓度在该半导体基片420和反应器中心430达到峰值，以及随着半径增加，SiClx物质的浓度由于SiClx物质的排出440和SiClx物质的损失而降低到室壁450沉积反应。然而，由于提供含硅气体至该等离子蚀刻室边缘区域，SiClx浓度460变化，从而显著减小总的SiClx浓度470的径向变化。
[0027]在不希望受到任何理论限制的情况下，相信总的SiClx浓度中径向变化的减小提高了到该半导体基片的钝化物质通量的均一性，由此提高该蚀刻工艺的径向关键尺寸均一性。更一般地，包含硅的钝化物质钝化蚀刻特征的侧壁。这个包含硅的钝化物质可由该等离子蚀刻(即，来自该半导体基片)产生和/或可以是该第二气体中的含硅气体。优选地，该蚀刻气体含有氯，例如当等离子由Cl2形成时，以及SiClx钝化蚀刻特征的侧壁。
[0028]尽管描述了各种实施例，但是应当理解，对本领域技术人员来说，显然，可以进行变化和修改。这些变化和修改认为是在附在这里的权利要求的范围内。

Claims (23)

1.一种具有提高的关键尺寸均一性的蚀刻半导体基片的方法包括：
在电感耦合等离子蚀刻室中基片支撑件上支撑半导体基片；
提供第一蚀刻气体至该半导体基片之上的中间区域；
提供包括至少一种含硅气体的第二气体至该半导体基片之上围绕该中间区域的边缘区域，其中该第二气体中硅浓度大于该第一蚀刻气体中的硅浓度；
通过将射频能量电感耦合进该室而由该第一蚀刻气体和第二气体生成等离子；以及
等离子蚀刻该半导体基片的暴露表面。
2.根据权利要求1所述的方法，包括等离子蚀刻从该半导体基片的暴露表面中的至少一个开口、过孔、沟槽和栅结构组成的组中选取的特征。
3.根据权利要求1所述的方法，其中至少一种包含硅的钝化物质钝化蚀刻入该半导体基片的特征的侧壁。
4.根据权利要求3所述的方法，其中该包含硅的钝化物质由该等离子蚀刻和该第二气体产生。
5.根据权利要求3所述的方法，其中该包含硅的钝化物质由该含硅气体提供。
6.根据权利要求3所述的方法，其中该第一蚀刻气体包括含硅气体，该方法进一步包括调节该第一蚀刻气体中的硅的量相对该第二气体中硅的量。
7.根据权利要求3所述的方法，其中该第一蚀刻气体包括氯，以及该包含硅的钝化物质包括SiClx。
8.根据权利要求1所述的方法，其中该含硅气体从SiCl4、SiHCl3、SiH2Cl2、SiH3Cl、SiH4、Si2H6、SiH3CH3、SiH(CH3)3、SiF4、SiBr4、四乙基原硅酸盐(TEOS)以及其混合物组成的组中选取。
9.根据权利要求1所述的方法，其中该含硅气体进一步包括惰性载体气体。
10.根据权利要求8所述的方法，其中该惰性载体气体从He，Ne，Ar，Kr，Xe以及其混合物组成的组中选取。
11.根据权利要求1所述的方法，其中该含硅气体进一步包括蚀刻剂气体。
12.根据权利要求11所述的方法，其中该蚀刻剂气体从Cl2、CxFy，HBr、CxFyHz、SF6、HCl以及其混合物组成的组中选取。
13.根据权利要求1所述的方法，其中该含硅气体进一步包括钝化气体。
14.根据权利要求13所述的方法，其中该钝化气体从O2，N2以及其混合物组成的组中选取。
15.根据权利要求1所述的方法，其中该半导体基片的暴露表面包括硅层。
16.根据权利要求15所述的方法，其中该硅层包括单晶硅晶片的暴露区域、张紧的硅层的暴露区域或硅锗层。
17.根据权利要求15所述的方法，其中该硅层在氮化硅、氧化硅，或氮氧化硅掩模层下面。
18.根据权利要求1所述的方法，其中通过将射频能量提供至平行于该半导体基片布置的平面线圈而将射频能量电感耦合进该等离子室来生成等离子。
19.根据权利要求15所述的方法，其中该硅层包括硅晶片上的多晶硅的层。
20.根据权利要求15所述的方法，其中该硅层在下面的栅氧化物和上面的硬或软掩模层或光刻胶之间。
21.根据权利要求20所述的方法，其中该硅层在氮化硅、氧化硅或氮氧化硅掩模层或光刻胶下面。
22.根据权利要求2所述的方法，其中在该半导体基片中间附近蚀刻的特征与靠近该晶片边缘蚀刻的同等特征基本上一致。
23.根据权利要求22所述的方法，其中该半导体基片是300mm晶片，以及该特征小于50nm并且具有小于或等于1.5nm的3σ不均一性。
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