JP2009541995A - 半導体基板を均一にエッチングするためのガス噴射 - Google Patents
半導体基板を均一にエッチングするためのガス噴射 Download PDFInfo
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- JP2009541995A JP2009541995A JP2009516500A JP2009516500A JP2009541995A JP 2009541995 A JP2009541995 A JP 2009541995A JP 2009516500 A JP2009516500 A JP 2009516500A JP 2009516500 A JP2009516500 A JP 2009516500A JP 2009541995 A JP2009541995 A JP 2009541995A
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000005530 etching Methods 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000002347 injection Methods 0.000 title description 8
- 239000007924 injection Substances 0.000 title description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 44
- 238000001020 plasma etching Methods 0.000 claims abstract description 14
- 230000002093 peripheral effect Effects 0.000 claims abstract description 9
- 238000009616 inductively coupled plasma Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 94
- 239000000460 chlorine Substances 0.000 claims description 14
- 239000000203 mixture Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 239000012159 carrier gas Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- 229910003691 SiBr Inorganic materials 0.000 claims description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052743 krypton Inorganic materials 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- 229910052724 xenon Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 24
- 239000006227 byproduct Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Description
Claims (23)
- 改良された限界寸法均一性で半導体基板をエッチングする方法であって、
誘導結合プラズマエッチングチャンバ内で基板支持体上に半導体基板を支持することと、
前記半導体基板の上の中央領域に第1のエッチングガスを供給することと、
少なくとも1種類のシリコン含有ガスを含む第2のガスであって、前記第2のガス中のシリコン濃度が前記第1のエッチングガス中のシリコン濃度より高い第2のガスを、前記半導体基板の上の前記中央領域を囲む周辺領域に供給することと、
前記チャンバ内への誘導結合高周波エネルギーにより前記第1のエッチングガスおよび前記第2のガスからプラズマを発生させることと、
前記半導体基板の露出面をプラズマエッチングすることとを含むことを特徴とする方法。 - 少なくとも1つの開口、ビア、トレンチ、およびゲート構造から成る群から選択されたフィーチャを前記半導体基板の前記露出面内にプラズマエッチングによって形成することを含むことを特徴とする請求項1に記載の方法。
- 少なくとも1つの、シリコンを含む不動態化化学種が、前記半導体基板内にエッチングによって形成されたフィーチャの側壁を不動態化することを特徴とする請求項1に記載の方法。
- 前記シリコンを含む不動態化化学種が、前記プラズマエッチングおよび前記第2のガスに起因することを特徴とする請求項3に記載の方法。
- 前記シリコンを含む不動態化化学種が、前記シリコン含有ガスにより供給されることを特徴とする請求項3に記載の方法。
- 前記第1のエッチングガスがシリコン含有ガスを含み、前記方法が、前記第1のエッチングガス中のシリコンの量を前記第2のガス中のシリコンの量に対して相対的に調節することをさらに含むことを特徴とする請求項3に記載の方法。
- 前記第1のエッチングガスが塩素を含み、前記シリコンを含む不動態化化学種がSiClXを含むことを特徴とする請求項3に記載の方法。
- 前記シリコン含有ガスが、SiCl4、SiHCl3、SiH2Cl2、SiH3Cl、SiH4、Si2H6、SiH3CH3、SiH(CH3)3、SiF4、SiBr4、テトラエチルオルソシリケート(TEOS)、およびそれらの混合物から成る群から選択されることを特徴とする請求項1に記載の方法。
- 前記シリコン含有ガスが不活性キャリアガスをさらに含むことを特徴とする請求項1に記載の方法。
- 前記不活性キャリアガスが、He、Ne、Ar、Kr、Xe、およびそれらの混合物から成る群から選択されることを特徴とする請求項8に記載の方法。
- 前記シリコン含有ガスがエッチングガスをさらに含むことを特徴とする請求項1に記載の方法。
- 前記エッチングガスが、Cl2、CXFY、HBr、CXFYHZ、SF6、HCl、およびそれらの混合物から成る群から選択されることを特徴とする請求項11に記載の方法。
- 前記シリコン含有ガスが不動態化ガスをさらに含むことを特徴とする請求項1に記載の方法。
- 前記不動態化ガスが、O2、N2、およびそれらの混合物から成る群から選択されることを特徴とする請求項13に記載の方法。
- 前記半導体基板の前記露出面がシリコン層を含むことを特徴とする請求項1に記載の方法。
- 前記シリコン層が、単結晶シリコンウェーハの露出領域、歪みシリコン層の露出領域またはシリコンゲルマニウム層を含むことを特徴とする請求項15に記載の方法。
- 前記シリコン層が、窒化シリコン、酸化シリコン、または酸窒化シリコンのマスク層の下にあることを特徴とする請求項15に記載の方法。
- プラズマが、前記半導体基板に平行に配置された平面コイルに高周波エネルギーを供給することにより、前記プラズマチャンバ内への誘導結合高周波エネルギーによって発生することを特徴とする請求項1に記載の方法。
- 前記シリコン層が、シリコンウェーハ上の多結晶シリコンの層を含むことを特徴とする請求項15に記載の方法。
- 前記シリコン層が、下にあるゲート酸化物と、上にあるハードもしくはソフトマスク層またはフォトレジストとの間にあることを特徴とする請求項15に記載の方法。
- 前記シリコン層が、窒化シリコン、酸化シリコンもしくは酸窒化シリコンのマスク層、またはフォトレジストの下にあることを特徴とする請求項20に記載の方法。
- 前記半導体基板の中央付近でエッチングされたフィーチャが、前記半導体基板の縁部付近でエッチングされた同等のフィーチャと実質的に均一であることを特徴とする請求項2に記載の方法。
- 前記半導体基板が300mmウェーハであり、前記フィーチャが50nm未満でありかつ1.5nm3σ以下の不均一性を有することを特徴とする請求項22に記載の方法。
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US11/455,671 | 2006-06-20 | ||
US11/455,671 US7932181B2 (en) | 2006-06-20 | 2006-06-20 | Edge gas injection for critical dimension uniformity improvement |
PCT/US2007/013159 WO2007149210A2 (en) | 2006-06-20 | 2007-06-05 | Gas injection to etch a semiconductor substrate uniformly |
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JP2012225344A Division JP2013042160A (ja) | 2006-06-20 | 2012-10-10 | 半導体基板を均一にエッチングするためのガス噴射 |
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JP2009541995A true JP2009541995A (ja) | 2009-11-26 |
JP5492557B2 JP5492557B2 (ja) | 2014-05-14 |
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JP2009516500A Active JP5492557B2 (ja) | 2006-06-20 | 2007-06-05 | 半導体基板を均一にエッチングするためのガス噴射 |
JP2012225344A Pending JP2013042160A (ja) | 2006-06-20 | 2012-10-10 | 半導体基板を均一にエッチングするためのガス噴射 |
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Country Status (6)
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US (1) | US7932181B2 (ja) |
JP (2) | JP5492557B2 (ja) |
KR (1) | KR101494469B1 (ja) |
CN (1) | CN101473415B (ja) |
TW (1) | TWI416614B (ja) |
WO (1) | WO2007149210A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101099716B1 (ko) | 2009-07-15 | 2011-12-28 | 세메스 주식회사 | 반도체 제조 장치에서 가스 배관의 구조 및 이를 포함하는 고밀도 플라즈마 기상 증착 장치 |
WO2013036619A2 (en) * | 2011-09-07 | 2013-03-14 | Applied Materials, Inc. | Method and apparatus for gas distribution and plasma application in a linear deposition chamber |
JP2015015408A (ja) * | 2013-07-08 | 2015-01-22 | 株式会社アルバック | ドライエッチング装置 |
JP2015018876A (ja) * | 2013-07-09 | 2015-01-29 | 株式会社アルバック | 反応装置のコンディショニング方法 |
Families Citing this family (153)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5607881B2 (ja) * | 2008-12-26 | 2014-10-15 | 東京エレクトロン株式会社 | 基板処理方法 |
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KR101139829B1 (ko) * | 2010-02-22 | 2012-04-30 | (주)젠 | 다중 가스공급장치 및 이를 구비한 플라즈마 처리장치 |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
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US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9034770B2 (en) | 2012-09-17 | 2015-05-19 | Applied Materials, Inc. | Differential silicon oxide etch |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
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US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US9111877B2 (en) | 2012-12-18 | 2015-08-18 | Applied Materials, Inc. | Non-local plasma oxide etch |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
US9399228B2 (en) | 2013-02-06 | 2016-07-26 | Novellus Systems, Inc. | Method and apparatus for purging and plasma suppression in a process chamber |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9536710B2 (en) * | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
US9165771B2 (en) | 2013-04-04 | 2015-10-20 | Tokyo Electron Limited | Pulsed gas plasma doping method and apparatus |
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US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
US9287095B2 (en) | 2013-12-17 | 2016-03-15 | Applied Materials, Inc. | Semiconductor system assemblies and methods of operation |
CN105814244B (zh) * | 2013-12-20 | 2018-06-29 | 日本碍子株式会社 | 包含氮化镓层的基板及其制造方法 |
US9287134B2 (en) | 2014-01-17 | 2016-03-15 | Applied Materials, Inc. | Titanium oxide etch |
US9293568B2 (en) | 2014-01-27 | 2016-03-22 | Applied Materials, Inc. | Method of fin patterning |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
JP2015170828A (ja) | 2014-03-11 | 2015-09-28 | 富士フイルム株式会社 | プラズマエッチング方法およびパターン化基板の製造方法 |
US9299575B2 (en) | 2014-03-17 | 2016-03-29 | Applied Materials, Inc. | Gas-phase tungsten etch |
US9299538B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US9269590B2 (en) | 2014-04-07 | 2016-02-23 | Applied Materials, Inc. | Spacer formation |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9355856B2 (en) | 2014-09-12 | 2016-05-31 | Applied Materials, Inc. | V trench dry etch |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9355862B2 (en) | 2014-09-24 | 2016-05-31 | Applied Materials, Inc. | Fluorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
US9299583B1 (en) | 2014-12-05 | 2016-03-29 | Applied Materials, Inc. | Aluminum oxide selective etch |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US9343272B1 (en) | 2015-01-08 | 2016-05-17 | Applied Materials, Inc. | Self-aligned process |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10304668B2 (en) * | 2016-05-24 | 2019-05-28 | Tokyo Electron Limited | Localized process control using a plasma system |
KR102553629B1 (ko) | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US10937660B2 (en) * | 2016-06-20 | 2021-03-02 | Tokyo Electron Limited | Method for processing workpiece |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US10267728B2 (en) * | 2016-09-28 | 2019-04-23 | Lam Research Corporation | Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
JP6796519B2 (ja) * | 2017-03-10 | 2020-12-09 | 東京エレクトロン株式会社 | エッチング方法 |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
TWI716818B (zh) | 2018-02-28 | 2021-01-21 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
KR102255071B1 (ko) * | 2019-03-28 | 2021-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 처리 챔버 다중스테이지 혼합 장치 |
KR102223806B1 (ko) * | 2019-03-28 | 2021-03-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 처리 챔버 다중스테이지 혼합 장치 |
CN110184587B (zh) * | 2019-05-23 | 2021-06-15 | 上海华力集成电路制造有限公司 | 提高硅片间刻蚀速率均匀性的方法及化学气相沉积设备 |
KR20220035192A (ko) | 2019-07-17 | 2022-03-21 | 램 리써치 코포레이션 | 기판 프로세싱을 위한 산화 프로파일의 변조 |
KR102697450B1 (ko) | 2019-09-27 | 2024-08-21 | 삼성전자주식회사 | 기판 처리 장치와 방법, 그 처리 방법을 이용한 반도체 소자 제조방법 |
CN112863982A (zh) * | 2019-11-12 | 2021-05-28 | 聚昌科技股份有限公司 | 侧向扰流式感应耦合等离子体蚀刻机的制造方法及其结构 |
CN111029254B (zh) * | 2019-12-26 | 2023-03-21 | 苏州科阳光电科技有限公司 | 一种干法刻蚀方法 |
US12009218B2 (en) | 2022-05-06 | 2024-06-11 | Applied Materials, Inc. | Pulsed etch process |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275564A (ja) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | マイクロ波プラズマエッチング装置 |
JP2005507159A (ja) * | 2001-10-15 | 2005-03-10 | ラム リサーチ コーポレーション | 調整可能なマルチゾーンガス噴射システム |
WO2006004693A2 (en) * | 2004-06-30 | 2006-01-12 | Lam Research Corporation | Method for bilayer resist plasma etch |
Family Cites Families (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4275752A (en) | 1978-09-22 | 1981-06-30 | Collier Nigel A | Fluid flow apparatus and method |
US4369031A (en) | 1981-09-15 | 1983-01-18 | Thermco Products Corporation | Gas control system for chemical vapor deposition system |
US4835114A (en) | 1986-02-19 | 1989-05-30 | Hitachi, Ltd. | Method for LPCVD of semiconductors using oil free vacuum pumps |
US5313982A (en) | 1988-07-08 | 1994-05-24 | Tadahiro Ohmi | Gas supply piping device for a process apparatus |
US5200388A (en) | 1988-05-13 | 1993-04-06 | Oki Electric Industry Co., Ltd. | Metalorganic chemical vapor deposition of superconducting films |
US5037666A (en) | 1989-08-03 | 1991-08-06 | Uha Mikakuto Precision Engineering Research Institute Co., Ltd. | High-speed film forming method by microwave plasma chemical vapor deposition (CVD) under high pressure |
US5077875A (en) | 1990-01-31 | 1992-01-07 | Raytheon Company | Reactor vessel for the growth of heterojunction devices |
US6251792B1 (en) | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
US5100505A (en) | 1990-10-18 | 1992-03-31 | Micron Technology, Inc. | Process for etching semiconductor devices |
US5288325A (en) | 1991-03-29 | 1994-02-22 | Nec Corporation | Chemical vapor deposition apparatus |
JP2797233B2 (ja) | 1992-07-01 | 1998-09-17 | 富士通株式会社 | 薄膜成長装置 |
JPH06295862A (ja) | 1992-11-20 | 1994-10-21 | Mitsubishi Electric Corp | 化合物半導体製造装置及び有機金属材料容器 |
DE69312436T2 (de) | 1992-12-15 | 1998-02-05 | Applied Materials Inc | Verdampfung von flüssigen Reaktionspartnern für CVD |
US5950693A (en) | 1993-04-28 | 1999-09-14 | Advanced Delivery & Chemical Systems, Ltd. | Bulk chemical delivery system |
JPH07245193A (ja) | 1994-03-02 | 1995-09-19 | Nissin Electric Co Ltd | プラズマ発生装置及びプラズマ処理装置 |
DE69508273T2 (de) | 1994-11-18 | 1999-11-04 | Advanced Micro Devices, Inc. | Verfahren zum ätzen von siliziumnitrid mit verstärkung der kritischen abmessung |
US5620524A (en) | 1995-02-27 | 1997-04-15 | Fan; Chiko | Apparatus for fluid delivery in chemical vapor deposition systems |
US5846883A (en) | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
US6090210A (en) | 1996-07-24 | 2000-07-18 | Applied Materials, Inc. | Multi-zone gas flow control in a process chamber |
US5865205A (en) | 1997-04-17 | 1999-02-02 | Applied Materials, Inc. | Dynamic gas flow controller |
US6296026B1 (en) | 1997-06-26 | 2001-10-02 | Advanced Technology Materials, Inc. | Chemical delivery system having purge system utilizing multiple purge techniques |
US6008140A (en) | 1997-08-13 | 1999-12-28 | Applied Materials, Inc. | Copper etch using HCI and HBr chemistry |
US6039074A (en) | 1997-09-09 | 2000-03-21 | Novellus Systems, Inc. | Pressure-induced shut-off valve for a liquid delivery system |
US6007330A (en) | 1998-03-12 | 1999-12-28 | Cosmos Factory, Inc. | Liquid precursor delivery system |
US6315858B1 (en) | 1998-03-18 | 2001-11-13 | Ebara Corporation | Gas polishing apparatus and method |
US6296711B1 (en) | 1998-04-14 | 2001-10-02 | Cvd Systems, Inc. | Film processing system |
US6192919B1 (en) | 1998-06-26 | 2001-02-27 | Advanced Delivery & Chemical Systems, Ltd. | Chemical delivery and containment system employing mobile shipping crate |
US6058958A (en) | 1998-11-05 | 2000-05-09 | Micromed Technology, Inc. | Pulsatile flow system and method |
US6052176A (en) | 1999-03-31 | 2000-04-18 | Lam Research Corporation | Processing chamber with optical window cleaned using process gas |
DE19919469A1 (de) * | 1999-04-29 | 2000-11-02 | Bosch Gmbh Robert | Verfahren zum Plasmaätzen von Silizium |
US6155289A (en) | 1999-05-07 | 2000-12-05 | International Business Machines | Method of and system for sub-atmospheric gas delivery with backflow control |
US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
US6415736B1 (en) | 1999-06-30 | 2002-07-09 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6245192B1 (en) | 1999-06-30 | 2001-06-12 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
US6302139B1 (en) | 1999-07-16 | 2001-10-16 | Advanced Technology Materials, Inc. | Auto-switching gas delivery system utilizing sub-atmospheric pressure gas supply vessels |
ATE420454T1 (de) | 1999-08-17 | 2009-01-15 | Tokyo Electron Ltd | Gepulstes plasmabehandlungsverfahren und vorrichtung |
US6318384B1 (en) * | 1999-09-24 | 2001-11-20 | Applied Materials, Inc. | Self cleaning method of forming deep trenches in silicon substrates |
US6410451B2 (en) | 1999-09-27 | 2002-06-25 | Lam Research Corporation | Techniques for improving etching in a plasma processing chamber |
US6900596B2 (en) | 2002-07-09 | 2005-05-31 | Applied Materials, Inc. | Capacitively coupled plasma reactor with uniform radial distribution of plasma |
US7030335B2 (en) | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
US6853141B2 (en) | 2002-05-22 | 2005-02-08 | Daniel J. Hoffman | Capacitively coupled plasma reactor with magnetic plasma control |
WO2001075188A2 (en) | 2000-03-30 | 2001-10-11 | Tokyo Electron Limited | Method of and apparatus for gas injection |
TW496907B (en) | 2000-04-14 | 2002-08-01 | Asm Microchemistry Oy | Method and apparatus of growing a thin film onto a substrate |
JP2002129337A (ja) | 2000-10-24 | 2002-05-09 | Applied Materials Inc | 気相堆積方法及び装置 |
US6607597B2 (en) | 2001-01-30 | 2003-08-19 | Msp Corporation | Method and apparatus for deposition of particles on surfaces |
US20020144657A1 (en) | 2001-04-05 | 2002-10-10 | Chiang Tony P. | ALD reactor employing electrostatic chuck |
JP2002339071A (ja) | 2001-05-18 | 2002-11-27 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | Alcvdシステムにおける処理ガス供給機構 |
US6746961B2 (en) | 2001-06-19 | 2004-06-08 | Lam Research Corporation | Plasma etching of dielectric layer with etch profile control |
US6794293B2 (en) | 2001-10-05 | 2004-09-21 | Lam Research Corporation | Trench etch process for low-k dielectrics |
US20030003696A1 (en) | 2001-06-29 | 2003-01-02 | Avgerinos Gelatos | Method and apparatus for tuning a plurality of processing chambers |
US20030045098A1 (en) * | 2001-08-31 | 2003-03-06 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6590344B2 (en) | 2001-11-20 | 2003-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Selectively controllable gas feed zones for a plasma reactor |
US6869880B2 (en) * | 2002-01-24 | 2005-03-22 | Applied Materials, Inc. | In situ application of etch back for improved deposition into high-aspect-ratio features |
US6921724B2 (en) | 2002-04-02 | 2005-07-26 | Lam Research Corporation | Variable temperature processes for tunable electrostatic chuck |
US20040018741A1 (en) | 2002-07-26 | 2004-01-29 | Applied Materials, Inc. | Method For Enhancing Critical Dimension Uniformity After Etch |
US6939811B2 (en) | 2002-09-25 | 2005-09-06 | Lam Research Corporation | Apparatus and method for controlling etch depth |
US7628897B2 (en) * | 2002-10-23 | 2009-12-08 | Applied Materials, Inc. | Reactive ion etching for semiconductor device feature topography modification |
US7169231B2 (en) | 2002-12-13 | 2007-01-30 | Lam Research Corporation | Gas distribution system with tuning gas |
US7534363B2 (en) | 2002-12-13 | 2009-05-19 | Lam Research Corporation | Method for providing uniform removal of organic material |
US20040112540A1 (en) | 2002-12-13 | 2004-06-17 | Lam Research Corporation | Uniform etch system |
US20040118344A1 (en) | 2002-12-20 | 2004-06-24 | Lam Research Corporation | System and method for controlling plasma with an adjustable coupling to ground circuit |
US7270713B2 (en) | 2003-01-07 | 2007-09-18 | Applied Materials, Inc. | Tunable gas distribution plate assembly |
US7098141B1 (en) * | 2003-03-03 | 2006-08-29 | Lam Research Corporation | Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures |
US6864174B2 (en) | 2003-03-20 | 2005-03-08 | Taiwan Semiconductor Manufacturing Co., Ltd | Iteratively selective gas flow control and dynamic database to achieve CD uniformity |
US6972258B2 (en) | 2003-08-04 | 2005-12-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for selectively controlling damascene CD bias |
JP4177192B2 (ja) * | 2003-08-05 | 2008-11-05 | 株式会社日立ハイテクノロジーズ | プラズマエッチング装置およびプラズマエッチング方法 |
US7202177B2 (en) | 2003-10-08 | 2007-04-10 | Lam Research Corporation | Nitrous oxide stripping process for organosilicate glass |
US6916697B2 (en) | 2003-10-08 | 2005-07-12 | Lam Research Corporation | Etch back process using nitrous oxide |
US7129171B2 (en) | 2003-10-14 | 2006-10-31 | Lam Research Corporation | Selective oxygen-free etching process for barrier materials |
US20050101135A1 (en) | 2003-11-12 | 2005-05-12 | Lam Research Corporation | Minimizing the loss of barrier materials during photoresist stripping |
US6893975B1 (en) | 2004-03-31 | 2005-05-17 | Tokyo Electron Limited | System and method for etching a mask |
US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US20060000802A1 (en) | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US7250373B2 (en) * | 2004-08-27 | 2007-07-31 | Applied Materials, Inc. | Method and apparatus for etching material layers with high uniformity of a lateral etch rate across a substrate |
US7196014B2 (en) | 2004-11-08 | 2007-03-27 | International Business Machines Corporation | System and method for plasma induced modification and improvement of critical dimension uniformity |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06275564A (ja) * | 1993-03-18 | 1994-09-30 | Hitachi Ltd | マイクロ波プラズマエッチング装置 |
JP2005507159A (ja) * | 2001-10-15 | 2005-03-10 | ラム リサーチ コーポレーション | 調整可能なマルチゾーンガス噴射システム |
WO2006004693A2 (en) * | 2004-06-30 | 2006-01-12 | Lam Research Corporation | Method for bilayer resist plasma etch |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101099716B1 (ko) | 2009-07-15 | 2011-12-28 | 세메스 주식회사 | 반도체 제조 장치에서 가스 배관의 구조 및 이를 포함하는 고밀도 플라즈마 기상 증착 장치 |
WO2013036619A2 (en) * | 2011-09-07 | 2013-03-14 | Applied Materials, Inc. | Method and apparatus for gas distribution and plasma application in a linear deposition chamber |
WO2013036619A3 (en) * | 2011-09-07 | 2013-05-02 | Applied Materials, Inc. | Method and apparatus for gas distribution and plasma application in a linear deposition chamber |
JP2015015408A (ja) * | 2013-07-08 | 2015-01-22 | 株式会社アルバック | ドライエッチング装置 |
JP2015018876A (ja) * | 2013-07-09 | 2015-01-29 | 株式会社アルバック | 反応装置のコンディショニング方法 |
Also Published As
Publication number | Publication date |
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JP2013042160A (ja) | 2013-02-28 |
WO2007149210A3 (en) | 2008-02-07 |
KR101494469B1 (ko) | 2015-03-02 |
CN101473415A (zh) | 2009-07-01 |
JP5492557B2 (ja) | 2014-05-14 |
TW200807549A (en) | 2008-02-01 |
KR20090026156A (ko) | 2009-03-11 |
CN101473415B (zh) | 2013-08-14 |
TWI416614B (zh) | 2013-11-21 |
US20070293043A1 (en) | 2007-12-20 |
WO2007149210A2 (en) | 2007-12-27 |
US7932181B2 (en) | 2011-04-26 |
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