CN101414586B - 功率半导体器件的封装件和封装方法 - Google Patents

功率半导体器件的封装件和封装方法 Download PDF

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Publication number
CN101414586B
CN101414586B CN2008101711058A CN200810171105A CN101414586B CN 101414586 B CN101414586 B CN 101414586B CN 2008101711058 A CN2008101711058 A CN 2008101711058A CN 200810171105 A CN200810171105 A CN 200810171105A CN 101414586 B CN101414586 B CN 101414586B
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die attach
tie
attach pad
packaging part
closed planar
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CN101414586A (zh
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巴鲁·巴尔克里什南
布莱德·L·霍索恩
斯特凡·鲍勒
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Power Integrations Inc
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Power Integrations Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/424—Cross-sectional shapes
    • H10W70/427—Bent parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/421—Shapes or dispositions
    • H10W70/442—Shapes or dispositions of multiple leadframes in a single chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
CN2008101711058A 2007-10-15 2008-10-15 功率半导体器件的封装件和封装方法 Active CN101414586B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/974,553 2007-10-15
US11/974,553 US7875962B2 (en) 2007-10-15 2007-10-15 Package for a power semiconductor device

Publications (2)

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CN101414586A CN101414586A (zh) 2009-04-22
CN101414586B true CN101414586B (zh) 2013-09-18

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US (2) US7875962B2 (https=)
EP (2) EP2426713A3 (https=)
JP (1) JP2009135444A (https=)
CN (1) CN101414586B (https=)

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US7557406B2 (en) * 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US8653583B2 (en) * 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US7875962B2 (en) * 2007-10-15 2011-01-25 Power Integrations, Inc. Package for a power semiconductor device
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US8648450B1 (en) * 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
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US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
TWI536524B (zh) * 2014-01-10 2016-06-01 萬國半導體股份有限公司 抑制爬電現象的半導體裝置及製備方法
JP6369039B2 (ja) * 2014-02-05 2018-08-08 日本電気株式会社 接続部材、電子部品及び情報表示方法
KR101604120B1 (ko) 2014-05-12 2016-03-16 앰코 테크놀로지 코리아 주식회사 Ｅｔｓ를 이용한 반도체 패키지 구조 및 방법
CN105990265B (zh) * 2015-02-26 2019-04-05 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
CN105990266B (zh) * 2015-02-26 2018-12-07 台达电子工业股份有限公司 功率转换电路的封装模块及其制造方法
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JP7024269B2 (ja) * 2017-09-12 2022-02-24 富士電機株式会社 半導体装置、半導体装置の積層体、及び、半導体装置の積層体の搬送方法
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JP7299751B2 (ja) * 2019-05-14 2023-06-28 ローム株式会社 半導体装置
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Also Published As

Publication number Publication date
JP2009135444A (ja) 2009-06-18
US20110108963A1 (en) 2011-05-12
US20090096072A1 (en) 2009-04-16
CN101414586A (zh) 2009-04-22
US8487417B2 (en) 2013-07-16
EP2426713A3 (en) 2014-08-13
EP2426713A2 (en) 2012-03-07
EP2051300A2 (en) 2009-04-22
US7875962B2 (en) 2011-01-25
EP2051300A3 (en) 2009-12-09

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