EP2426713A3 - Package for a power semiconductor device - Google Patents

Package for a power semiconductor device Download PDF

Info

Publication number
EP2426713A3
EP2426713A3 EP11191463.6A EP11191463A EP2426713A3 EP 2426713 A3 EP2426713 A3 EP 2426713A3 EP 11191463 A EP11191463 A EP 11191463A EP 2426713 A3 EP2426713 A3 EP 2426713A3
Authority
EP
European Patent Office
Prior art keywords
package
tie bars
lateral sides
general plane
attach pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11191463.6A
Other languages
German (de)
French (fr)
Other versions
EP2426713A2 (en
Inventor
Balu Balakrishnan
Brad L. Hawthorne
Stefan BÄURLE
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Integrations Inc
Original Assignee
Power Integrations Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Integrations Inc filed Critical Power Integrations Inc
Publication of EP2426713A2 publication Critical patent/EP2426713A2/en
Publication of EP2426713A3 publication Critical patent/EP2426713A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

A package for a semiconductor die includes a die attach pad that provides an attachment surface area for the semiconductor die, and tie bars connected to the die attach pad. The die attach pad is disposed in a first general plane and the tie bars are disposed in a second general plane offset with respect to the first general plane. A molding compound encapsulates the semiconductor die in a form having first, second, third and fourth lateral sides, a top and a bottom. The tie bars are exposed substantially coincident with at least one of the lateral sides. The form includes a discontinuity that extends along the at least one of the lateral sides, the discontinuity increasing a creepage distance measured from the tie bars to the bottom of the package.
Figure imgaf001
EP11191463.6A 2007-10-15 2008-10-15 Package for a power semiconductor device Withdrawn EP2426713A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/974,553 US7875962B2 (en) 2007-10-15 2007-10-15 Package for a power semiconductor device
EP08166705A EP2051300A3 (en) 2007-10-15 2008-10-15 Package for a power semiconductor device

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
EP08166705.7 Division 2008-10-15
EP08166705A Division EP2051300A3 (en) 2007-10-15 2008-10-15 Package for a power semiconductor device

Publications (2)

Publication Number Publication Date
EP2426713A2 EP2426713A2 (en) 2012-03-07
EP2426713A3 true EP2426713A3 (en) 2014-08-13

Family

ID=39877762

Family Applications (2)

Application Number Title Priority Date Filing Date
EP11191463.6A Withdrawn EP2426713A3 (en) 2007-10-15 2008-10-15 Package for a power semiconductor device
EP08166705A Withdrawn EP2051300A3 (en) 2007-10-15 2008-10-15 Package for a power semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP08166705A Withdrawn EP2051300A3 (en) 2007-10-15 2008-10-15 Package for a power semiconductor device

Country Status (4)

Country Link
US (2) US7875962B2 (en)
EP (2) EP2426713A3 (en)
JP (1) JP2009135444A (en)
CN (1) CN101414586B (en)

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US7871882B2 (en) 2008-12-20 2011-01-18 Power Integrations, Inc. Method of fabricating a deep trench insulated gate bipolar transistor
US20100155831A1 (en) * 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US8207455B2 (en) * 2009-07-31 2012-06-26 Power Integrations, Inc. Power semiconductor package with bottom surface protrusions
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US8648450B1 (en) * 2011-01-27 2014-02-11 Amkor Technology, Inc. Semiconductor device including leadframe with a combination of leads and lands
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US8653600B2 (en) 2012-06-01 2014-02-18 Power Integrations, Inc. High-voltage monolithic schottky device structure
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
TWI536524B (en) * 2014-01-10 2016-06-01 萬國半導體股份有限公司 Semiconductor device for restraining creep-age phenomenon and fabricating method thereof
JP6369039B2 (en) * 2014-02-05 2018-08-08 日本電気株式会社 Connection member, electronic component, and information display method
KR101604120B1 (en) 2014-05-12 2016-03-16 앰코 테크놀로지 코리아 주식회사 Semiconductor package structure using ets and method thereof
CN105990266B (en) * 2015-02-26 2018-12-07 台达电子工业股份有限公司 The package module and its manufacturing method of circuit for power conversion
CN105990265B (en) * 2015-02-26 2019-04-05 台达电子工业股份有限公司 The package module and its manufacturing method of circuit for power conversion
KR102326069B1 (en) * 2015-07-29 2021-11-12 엘지디스플레이 주식회사 Organic light emitting display device
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CN107275295A (en) * 2017-06-05 2017-10-20 深圳市力生美半导体股份有限公司 A kind of power IC device, method for packing and supply unit
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JP7024269B2 (en) * 2017-09-12 2022-02-24 富士電機株式会社 A method for transporting a semiconductor device, a laminate of semiconductor devices, and a laminate of semiconductor devices.
JP2019212833A (en) * 2018-06-07 2019-12-12 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
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CN111370382A (en) 2018-12-25 2020-07-03 恩智浦美国有限公司 Hybrid lead frame for semiconductor die package with improved creepage distance
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US11121094B2 (en) * 2019-06-20 2021-09-14 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor devices with shield
US11289406B2 (en) * 2019-09-18 2022-03-29 Allegro Microsystems, Llc Signal isolator having enhanced creepage characteristics
JP7408804B2 (en) * 2019-11-27 2024-01-05 ザ・ノコ・カンパニー How to interface control pins (gate pins) of power semiconductor devices (MOSFETs) to printed circuit boards (PCBs) in semiconductor devices, printed circuit boards (PCBs), and battery management systems (BMS)
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US20090096072A1 (en) 2009-04-16
US7875962B2 (en) 2011-01-25
US20110108963A1 (en) 2011-05-12
JP2009135444A (en) 2009-06-18
EP2426713A2 (en) 2012-03-07
EP2051300A3 (en) 2009-12-09
CN101414586A (en) 2009-04-22
US8487417B2 (en) 2013-07-16
EP2051300A2 (en) 2009-04-22

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