JPH0897333A - Semiconductor molded package - Google Patents
Semiconductor molded packageInfo
- Publication number
- JPH0897333A JPH0897333A JP26152394A JP26152394A JPH0897333A JP H0897333 A JPH0897333 A JP H0897333A JP 26152394 A JP26152394 A JP 26152394A JP 26152394 A JP26152394 A JP 26152394A JP H0897333 A JPH0897333 A JP H0897333A
- Authority
- JP
- Japan
- Prior art keywords
- electrode terminals
- view
- semiconductor
- radiator
- creeping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体モールドパッケ
ージに関するものであり、更に詳しくは、沿面放電を起
きにくくしたモールドパッケージの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor mold package, and more particularly, to a structure of a mold package in which creeping discharge is hard to occur.
【０００２】[0002]
【従来の技術】従来、半導体モールドパッケージの形状
は、図９に示すような形状であり、電極端子２間に高電
圧が印加された時、電極間で沿面放電が起こる。また、
図１０は、図９に示す従来の半導体モールドパッケージ
を放熱器１１に取り付けた状態を示しているが、金属製
の放熱器１１に取り付けた場合は、電極端子２に高電圧
が印加された時、電極端子２と放熱器１１との間に沿面
放電が起こる可能性があるという欠点があった。2. Description of the Related Art Conventionally, a semiconductor mold package has a shape as shown in FIG. 9, and when a high voltage is applied between the electrode terminals 2, a creeping discharge occurs between the electrodes. Also,
FIG. 10 shows a state in which the conventional semiconductor mold package shown in FIG. 9 is attached to the radiator 11, but when it is attached to the metal radiator 11, when a high voltage is applied to the electrode terminal 2. However, there is a drawback that a creeping discharge may occur between the electrode terminal 2 and the radiator 11.
【０００３】[0003]
【発明が解決しようとする課題】本発明の技術的課題
は、沿面放電電圧を大きくして、沿面放電が起こりにく
い構造の半導体モールドパッケージを供することであ
る。SUMMARY OF THE INVENTION A technical object of the present invention is to provide a semiconductor mold package having a structure in which creeping discharge is hard to occur by increasing creeping discharge voltage.
【０００４】[0004]
【課題を解決するための手段】本発明は、モールド樹脂
成形された半導体デバイスの、複数の電極端子間のモー
ルド樹脂部分に凹凸や、電極端子の一部をモールド樹脂
で囲むようにして、複数の電極端子間の沿面距離を大き
くして、沿面放電が起きにくくした構造とする。SUMMARY OF THE INVENTION According to the present invention, a semiconductor device molded by molding resin is provided with a plurality of electrodes by forming irregularities in a molding resin portion between a plurality of electrode terminals or by surrounding a part of the electrode terminals with the molding resin. Increase the creepage distance between the terminals to prevent creeping discharge from occurring.
【０００５】また、半導体デバイスを金属性の放熱器に
取り付けて使用する場合に半導体デバイスの放熱器に取
り付ける側のモールド樹脂部分を階段状にえぐることに
より、電極端子と放熱器間の沿面距離を大きくして、沿
面放電が起きにくくした構造とする。When the semiconductor device is mounted on a metal radiator and used, the creepage distance between the electrode terminal and the radiator is reduced by scooping the mold resin portion on the side of the semiconductor device to be mounted on the radiator. The structure should be large so that creeping discharge is unlikely to occur.
【０００６】[0006]
【作用】沿面放電は、固体絶縁物の表面に水の薄膜が吸
着し、または、固体絶縁物表面が汚損されたために、固
体絶縁物表面で放電が発生するものであり、この場合、
固体絶縁物及び空気の絶縁耐力よりも表面の絶縁耐力が
小さくなっている。放電電圧は、沿面距離に比例するこ
とから、沿面放電電圧を大きくすることは、電極間、あ
るいは電極と他の導電体との沿面距離を大きくした構造
とすることによって達成できる。[Function] A creeping discharge is a discharge that occurs on the surface of a solid insulator because a thin film of water is adsorbed on the surface of the solid insulator or the surface of the solid insulator is soiled. In this case,
The dielectric strength of the surface is smaller than the dielectric strength of solid insulators and air. Since the discharge voltage is proportional to the creepage distance, increasing the creeping discharge voltage can be achieved by increasing the creepage distance between the electrodes or between the electrode and another conductor.
【０００７】[0007]
【実施例】以下に実施例を挙げ、本発明の半導体モール
ドパッケージについて、図面を参照して詳細に説明す
る。EXAMPLES The semiconductor mold package of the present invention will be described in detail below with reference to the accompanying examples.
【０００８】（実施例１）図１に示すように、電極端子
２間の沿面放電電圧を大きくするために、電極端子２間
にモールド樹脂成形時に凸部４を形成し、電極端子２間
の沿面距離を大きくする。(Embodiment 1) As shown in FIG. 1, in order to increase the creeping discharge voltage between the electrode terminals 2, a convex portion 4 is formed between the electrode terminals 2 at the time of molding resin molding, and the space between the electrode terminals 2 is formed. Increase the creepage distance.
【０００９】（実施例２）図２に示すように、電極端子
２間の沿面放電電圧を大きくするために、電極端子２間
にモールド樹脂成形時に凹部５を形成し、電極端子２間
の沿面距離を大きくする。(Embodiment 2) As shown in FIG. 2, in order to increase the creeping discharge voltage between the electrode terminals 2, a recess 5 is formed between the electrode terminals 2 at the time of molding resin molding, and the creeping surface between the electrode terminals 2 is formed. Increase the distance.
【００１０】（実施例３）図３に示すように、電極端子
２間の沿面放電電圧を大きくするために、電極端子２間
のモールドパッケージとの接続部近辺をモールド樹脂成
形時に樹脂で覆うような樹脂封止６を作製し、電極端子
２間の沿面距離を大きくする。(Embodiment 3) As shown in FIG. 3, in order to increase the creeping discharge voltage between the electrode terminals 2, the vicinity of the connecting portion between the electrode terminals 2 and the mold package is covered with resin at the time of molding resin molding. The resin sealing 6 is made to increase the creeping distance between the electrode terminals 2.
【００１１】（実施例４）図４に示すように、電極端子
２と放熱器１１（図８参照）の沿面放電電圧を大きくす
るために、モールド成形時に、放熱器側で電極端子接続
部近傍の樹脂モールド３を階段状にえぐって段差８を形
成し、電極端子２と放熱器１１間の沿面距離を大きくす
る。(Embodiment 4) As shown in FIG. 4, in order to increase the creeping discharge voltage of the electrode terminal 2 and the radiator 11 (see FIG. 8), the vicinity of the electrode terminal connection portion on the radiator side is close to that at the time of molding. A step 8 is formed by scooping the resin mold 3 in stepwise to increase the creepage distance between the electrode terminal 2 and the radiator 11.
【００１２】（実施例５）図５に示すように、電極端子
２間及び電極端子２と放熱器１１（図８参照）間の沿面
放電電圧を大きくするために、モールド成形時に、電極
端子２間に凸部４、及び放熱器側で電極端子接続部近傍
の樹脂モールド３に階段状の段差７を形成し、電極端子
２間及び電極端子２と放熱器１１間の沿面距離を大きく
する。(Embodiment 5) As shown in FIG. 5, in order to increase the creeping discharge voltage between the electrode terminals 2 and between the electrode terminals 2 and the radiator 11 (see FIG. 8), the electrode terminals 2 are molded at the time of molding. A step-like step 7 is formed in the convex portion 4 and the resin mold 3 near the electrode terminal connection portion on the radiator side to increase the creeping distance between the electrode terminals 2 and between the electrode terminals 2 and the radiator 11.
【００１３】（実施例６）図６に示すように、電極端子
２間及び電極端子２と放熱器１１（図８参照）間の沿面
放電電圧を大きくするために、モールド成形時に、電極
端子２間に凹部５、及び放熱器側で電極端子接続部近傍
の樹脂モールド３に階段状の段差８を形成し、電極端子
２間及び電極端子２と放熱器１１間の沿面距離を大きく
する。(Embodiment 6) As shown in FIG. 6, in order to increase the creeping discharge voltage between the electrode terminals 2 and between the electrode terminals 2 and the radiator 11 (see FIG. 8), the electrode terminals 2 are molded at the time of molding. A stepped step 8 is formed in the recess 5 and in the resin mold 3 near the electrode terminal connection portion on the radiator side to increase the creeping distance between the electrode terminals 2 and between the electrode terminals 2 and the radiator 11.
【００１４】（実施例７）図７に示すように、電極端子
２間及び電極端子２と放熱器１１（図８参照）間の沿面
放電電圧を大きくするために、モールド成形時に、電極
端子２間のモールドパッケージとの接続部近辺を樹脂で
覆うような樹脂封止６、及び放熱器側で電極端子接続部
近傍の樹脂モールド３に階段状の段差９を形成し、電極
端子２間及び電極端子２と放熱器１１間の沿面距離を大
きくする。(Embodiment 7) As shown in FIG. 7, in order to increase the creeping discharge voltage between the electrode terminals 2 and between the electrode terminals 2 and the radiator 11 (see FIG. 8), the electrode terminals 2 are molded at the time of molding. Between the electrode terminals 2 and the electrodes, by forming a stepwise step 9 on the resin mold 6 in the vicinity of the electrode terminal connection portion on the radiator side with resin sealing 6 that covers the vicinity of the connection portion with the mold package. The creepage distance between the terminal 2 and the radiator 11 is increased.
【００１５】図８に、実施例１の半導体モールドパッケ
ージを放熱器に取り付けた状態を示している。FIG. 8 shows a state in which the semiconductor mold package of Embodiment 1 is attached to a radiator.
【００１６】なお、以上、３端子の半導体モールドパッ
ケージについて説明したが、本発明による構造は、端子
数が変わっても適用可能である。Although the three-terminal semiconductor mold package has been described above, the structure according to the present invention can be applied even if the number of terminals is changed.
【００１７】[0017]
【発明の効果】以上、述べたように、本発明の半導体モ
ールドパッケージによれば、電極端子間及び電極端子と
放熱器間の構造を、樹脂により、凹凸や階段状の段差を
形成して変えることにより、沿面距離が大きくとれて、
沿面放電電圧を大きく改善した半導体モールドパッケー
ジが得られるようになった。As described above, according to the semiconductor mold package of the present invention, the structure between the electrode terminals and between the electrode terminals and the radiator is changed by forming unevenness or stepped steps with resin. By doing so, the creepage distance can be made large,
A semiconductor mold package having a significantly improved creepage discharge voltage has been obtained.
【図１】実施例１による半導体モールドパッケージを示
す図。図１（ａ）は平面図、図１（ｂ）は側面図、図１
（ｃ）は平面図（裏面）、図１（ｄ）は正面図。FIG. 1 is a diagram showing a semiconductor mold package according to a first embodiment. 1A is a plan view, FIG. 1B is a side view, and FIG.
1C is a plan view (back side), and FIG. 1D is a front view.
【図２】実施例２による半導体モールドパッケージを示
す図。図２（ａ）は平面図、図２（ｂ）は側面図、図２
（ｃ）は平面図（裏面）、図２（ｄ）は正面図。FIG. 2 is a diagram showing a semiconductor mold package according to a second embodiment. 2A is a plan view, FIG. 2B is a side view, and FIG.
2C is a plan view (back side), and FIG. 2D is a front view.
【図３】実施例３による半導体モールドパッケージを示
す図。図３（ａ）は平面図、図３（ｂ）は側面図、図３
（ｃ）は平面図（裏面）、図３（ｄ）は正面図。FIG. 3 is a diagram showing a semiconductor mold package according to a third embodiment. 3A is a plan view, FIG. 3B is a side view, and FIG.
3C is a plan view (back surface), and FIG. 3D is a front view.
【図４】実施例４による半導体モールドパッケージを示
す図。図４（ａ）は平面図、図４（ｂ）は側面図、図４
（ｃ）は平面図（裏面）、図４（ｄ）は正面図。FIG. 4 is a diagram showing a semiconductor mold package according to a fourth embodiment. 4A is a plan view, FIG. 4B is a side view, and FIG.
4C is a plan view (back side), and FIG. 4D is a front view.
【図５】実施例５による半導体モールドパッケージを示
す図。図５（ａ）は平面図、図５（ｂ）は側面図、図５
（ｃ）は平面図（裏面）、図５（ｄ）は正面図。FIG. 5 is a diagram showing a semiconductor mold package according to a fifth embodiment. 5A is a plan view, FIG. 5B is a side view, and FIG.
5C is a plan view (back side), and FIG. 5D is a front view.
【図６】実施例６による半導体モールドパッケージを示
す図。図６（ａ）は平面図、図６（ｂ）は側面図、図６
（ｃ）は平面図（裏面）、図６（ｄ）は正面図。FIG. 6 is a diagram showing a semiconductor mold package according to a sixth embodiment. 6A is a plan view, FIG. 6B is a side view, and FIG.
6C is a plan view (back surface), and FIG. 6D is a front view.
【図７】実施例７による半導体モールドパッケージを示
す図。図７（ａ）は平面図、図７（ｂ）は側面図、図７
（ｃ）は平面図（裏面）、図７（ｄ）は正面図。FIG. 7 is a diagram showing a semiconductor mold package according to a seventh embodiment. 7A is a plan view, FIG. 7B is a side view, and FIG.
7C is a plan view (back side), and FIG. 7D is a front view.
【図８】図１の半導体モールドパッケージを放熱器に取
り付けた状態を断面で示す説明図。FIG. 8 is an explanatory view showing a cross section of a state in which the semiconductor mold package of FIG. 1 is attached to a radiator.
【図９】従来の半導体モールドパッケージの形状を断面
で示す説明図。図９（ａ）は平面図、図９（ｂ）は側面
図、図９（ｃ）は平面図（裏面）、図９（ｄ）は正面
図。FIG. 9 is an explanatory view showing a cross section of the shape of a conventional semiconductor mold package. 9A is a plan view, FIG. 9B is a side view, FIG. 9C is a plan view (back side), and FIG. 9D is a front view.
【図１０】図９の半導体パッケージを放熱器に取り付け
た状態を断面で示す説明図。FIG. 10 is an explanatory view showing a cross section of a state in which the semiconductor package of FIG. 9 is attached to a radiator.
１ 半導体リードフレーム ２ 電極端子 ３ 樹脂モールド ４ （パッケージ）凸部 ５ （パッケージ）凹部 ６ 端子包囲樹脂部 ７，８，９ 階段状段差 １０ 電極端子・放熱器間沿面構造（階段状段差） １１ 放熱器 1 Semiconductor Lead Frame 2 Electrode Terminal 3 Resin Mold 4 (Package) Convex 5 (Package) Recess 6 Terminal Enclosing Resin 7,8,9 Stepped Step 10 Surface Structure between Electrode Terminal and Heat Sink (Stepped Step) 11 Heat Dissipation vessel
Claims (3)
の複数の電極端子間のモールド樹脂部分に凹凸を設けた
構造であることを特徴とする半導体モールドパッケー
ジ。1. A semiconductor mold package having a structure in which unevenness is provided on a mold resin portion between a plurality of electrode terminals of a semiconductor device molded by a mold resin.
の複数の電極端子のモールド樹脂部分との接続部近傍を
モールド樹脂で覆った構造であることを特徴とする半導
体モールドパッケージ。2. A semiconductor mold package having a structure in which the vicinity of connection portions of a plurality of electrode terminals of a semiconductor device molded by a mold resin with a mold resin portion is covered with a mold resin.
の放熱器側で電極端子接続部近傍のモールド樹脂部分が
階段状にえぐられた構造であることを特徴とする半導体
モールドパッケージ。3. A semiconductor mold package having a structure in which a mold resin portion in the vicinity of an electrode terminal connecting portion is hollowed in a step shape on the radiator side of a semiconductor device attached to the radiator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26152394A JPH0897333A (en) | 1994-09-29 | 1994-09-29 | Semiconductor molded package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26152394A JPH0897333A (en) | 1994-09-29 | 1994-09-29 | Semiconductor molded package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0897333A true JPH0897333A (en) | 1996-04-12 |
Family
ID=17363092
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26152394A Pending JPH0897333A (en) | 1994-09-29 | 1994-09-29 | Semiconductor molded package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0897333A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10142472A1 (en) * | 2001-08-31 | 2002-10-31 | Infineon Technologies Ag | Electronic high voltage and power component comprises external contact pins and/or external contact lug protruding from a housing and partially surrounded by a heat conducting protective layer based on an organic ceramic |
| EP2051300A3 (en) * | 2007-10-15 | 2009-12-09 | Power Integrations, Inc. | Package for a power semiconductor device |
| CN102629595A (en) * | 2012-04-18 | 2012-08-08 | 无锡凤凰半导体科技有限公司 | Component encapsulating structure |
| JP2017059846A (en) * | 2016-11-24 | 2017-03-23 | 三菱電機株式会社 | Manufacturing method for power module |
| CN107039388A (en) * | 2013-12-02 | 2017-08-11 | 三菱电机株式会社 | The manufacture method of power model |
| JP2018522423A (en) * | 2015-08-07 | 2018-08-09 | ヴィシェイ デール エレクトロニクス エルエルシー | Molded body and electrical device with molded body for high voltage applications |
| WO2018198957A1 (en) * | 2017-04-24 | 2018-11-01 | ローム株式会社 | Semiconductor device |
| WO2020039466A1 (en) * | 2018-08-20 | 2020-02-27 | 三菱電機株式会社 | Semiconductor module |
| CN112703594A (en) * | 2018-09-19 | 2021-04-23 | 罗姆股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
-
1994
- 1994-09-29 JP JP26152394A patent/JPH0897333A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10142472A1 (en) * | 2001-08-31 | 2002-10-31 | Infineon Technologies Ag | Electronic high voltage and power component comprises external contact pins and/or external contact lug protruding from a housing and partially surrounded by a heat conducting protective layer based on an organic ceramic |
| EP2051300A3 (en) * | 2007-10-15 | 2009-12-09 | Power Integrations, Inc. | Package for a power semiconductor device |
| CN102629595A (en) * | 2012-04-18 | 2012-08-08 | 无锡凤凰半导体科技有限公司 | Component encapsulating structure |
| US10332869B2 (en) | 2013-12-02 | 2019-06-25 | Mitsubishi Electric Corporation | Method for manufacturing power module |
| CN107039388A (en) * | 2013-12-02 | 2017-08-11 | 三菱电机株式会社 | The manufacture method of power model |
| JP2018522423A (en) * | 2015-08-07 | 2018-08-09 | ヴィシェイ デール エレクトロニクス エルエルシー | Molded body and electrical device with molded body for high voltage applications |
| JP2017059846A (en) * | 2016-11-24 | 2017-03-23 | 三菱電機株式会社 | Manufacturing method for power module |
| WO2018198957A1 (en) * | 2017-04-24 | 2018-11-01 | ローム株式会社 | Semiconductor device |
| JPWO2018198957A1 (en) * | 2017-04-24 | 2020-03-12 | ローム株式会社 | Semiconductor device |
| US11482479B2 (en) | 2017-04-24 | 2022-10-25 | Rohm Co., Ltd. | Semiconductor device |
| WO2020039466A1 (en) * | 2018-08-20 | 2020-02-27 | 三菱電機株式会社 | Semiconductor module |
| JPWO2020039466A1 (en) * | 2018-08-20 | 2021-06-03 | 三菱電機株式会社 | Semiconductor module |
| US11621216B2 (en) | 2018-08-20 | 2023-04-04 | Mitsubishi Electric Corporation | Semiconductor module |
| CN112703594A (en) * | 2018-09-19 | 2021-04-23 | 罗姆股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| US11854923B2 (en) | 2018-09-19 | 2023-12-26 | Rohm Co., Ltd. | Semiconductor device |
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