JP4416140B2 - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device Download PDF

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JP4416140B2
JP4416140B2 JP2000112780A JP2000112780A JP4416140B2 JP 4416140 B2 JP4416140 B2 JP 4416140B2 JP 2000112780 A JP2000112780 A JP 2000112780A JP 2000112780 A JP2000112780 A JP 2000112780A JP 4416140 B2 JP4416140 B2 JP 4416140B2
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lead
resin
semiconductor device
inner end
encapsulated
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JP2001298142A (en
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晃 本多
孝雄 仙田
徳生 奥津
正志 金敷
長次 宍戸
孝太郎 佐藤
典克 杉本
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日本インター株式会社
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

【０００１】
本発明は、電子回路基板等に面実装のできる樹脂封止型半導体装置の改良構造に関するものである。
【０００２】
【従来の技術】
樹脂封止型半導体装置の従来の構造例を図４及び図５を参照して説明する。まず、図５の樹脂封止型半導体装置１は、樹脂封止部２の下面と同一面となるように折り曲げ形成した平坦な外方端３ａ，４ａを有する第１リード３と第２リード４を備えている。
【０００３】
上記外方端３ａ，４ａと連ねて形成されたクランク状の立上り部３ｂ，４ｂは樹脂封止部２より外部に露出し、これらの立上り部３ｂ，４ｂに連なる内方端３ｃ，４ｃは、樹脂封止部２内に埋設されている。第１リード３の内方端３ｃ上には半導体ペレット５が半田固着され、この半導体ペレット５の表面電極（図示せず）と第２リード４の内方端４ｃとがボンディングワイヤ６にて結線されている。
【０００４】
上記図５に示した樹脂封止型半導体装置１を製作するには、例えば図４に示すようなリードフレーム７を使用する。
すなわち、リードフレーム７の幅方向に対向して設けたタイバ部８，９から内方に延びる第１リード部１０及び第２リード部１１が形成され、いずれか一方、この図では第１リード部１０の先端部に半導体ペレット５が搭載・固着される。半導体ペレット５の表面電極（図示せず）と第２リード１１の先端部とはボンディングワイヤ６にて結線される。
なお、上記のリードフレーム７は対抗するタイバ部８，９間が補強等のため連結部７ａにより連結されている。
【０００５】
上記のリードフレーム７を図示しない金型内に収納し、封止用樹脂を該金型内に注入して、トラスファーモールド法等により二点鎖線で示した部分に樹脂封止部２を形成する。
金型内から取り出したリードフレーム７は、タイバ部８，９、連結部１１がプレス等により切り離され、また、図５の樹脂封止型半導体装置１ではクランク状の立上り部３ｂ，４ｂ及びそれに連なる平坦な外方端３ａ，４ａをプレス等により折り曲げ形成する。
【０００６】
【発明が解決しようとする課題】
従来の樹脂封止型半導体装置は上記のように構成されているので、次のような解決すべき課題があった。
（１）半導体ペレット５の表面電極と第２リード４の内方端４ｃとがボンディングワイヤ６で結線されているために、該半導体ペレット５の上面からの放熱が悪く、半導体ペレット５に流せる電流を大きくできないという解決すべき課題があった。
（２）上記樹脂封止部２の側面から外部に露出したリードのフォーミング加工の際に半導体ペレット５に機械的ストレスが加わり、半導体装置の電気的特性を劣化させるおそれがあることや樹脂封止部２にクラックを生じさせ、耐湿性を損ねかねないという解決すべき課題があった。
【０００７】
【発明の目的】
本発明は上記のような課題を解決すためになされたもので、▲１▼半導体ペレットからの発熱を効率良く放熱できる構造とし、大電流を流せるようにするとともに、▲２▼リードのフォーミング加工をなくし、半導体ペレット及び樹脂封止部に機械的ストレスを与えない樹脂封止型半導体装置を提供することを目的とするものである。
【０００８】
【課題を解決するための手段】
請求項１に記載の発明によれば、半導体ペレット（５）に接続される第１リード（３）と第２リード（４）とを有し、該半導体ペレット（５）及び前記第１リード（３）の内方端（３ｃ）ならびに第２リード（４）の内方端（４ｃ）の周囲を樹脂にて封止し、樹脂封止部（２）を形成した樹脂封止型半導体装置において、
上記第１リード（３）の外方端（３ａ）の下面は、上記樹脂封止部（２）の下面と同一平面とし、上記第１リード（３）の外方端（３ａ）に連らなる立上り部（３ｂ）は、上記樹脂封止部（２）内に埋設され、該第１リード（３）の立上り部（３ｂ）に連ねて水平方向に形成された内方端（３ｃ）と前記半導体ペレット（５）とが電気的に接続され、前記内方端（４ｃ）と連なる外方端（４ａ）を前記第２リード（４）が有し、前記第２リード（４）の外方端（４ａ）は、上記樹脂封止部（２）から一部が露出され、かつ、該第２リード（４）の下面全体が上記樹脂封止部（２）の下面と同一平面となるように形成し、
前記第２リード（４）の内方端（４ｃ）の先端部（４ｄ）を折り曲げて上方へ偏位させ、前記第１リード（３）と第２リード（４）と間の沿面距離を長くし、
前記第２リード（４）の内方端（４ｃ）のうち、上方へ偏位せしめられている先端部（４ｄ）以外の部分の上面に半導体ペレット（５）を固着させたことを特徴とする樹脂封止型半導体装置が提供される。
【００１０】
請求項２に記載の発明によれば、前記第１リード（３）の内方端（３ｃ）と、前記第２リード（４）の内方端（３ｃ）の上面に固着された半導体ペレット（５）の上面とは、平板状の導体からなる内部リード（１３）により電気的に接続したことを特徴とする請求項１に記載の樹脂封止型半導体装置が提供される。
【００１１】
請求項３に記載の発明によれば、前記第１リード（３）の内方端（３ｃ）と前記内部リード（１３）の外方端との接続部は、一方が凸部で他方が凹部の相補形状を備え、互いの位置決めをなすことを特徴とする請求項２に記載の樹脂封止型半導体装置が提供される。
【００１２】
【実施例】
以下に、本発明の実施例を、図１ないし図３を参照して説明する。図１は本発明の樹脂封止型半導体装置の縦断面図あり、図において樹脂封止型半導体装置１は、第１リード３を有し、この第１リード３は、従来と同様に外方端３ａの一部が樹脂封止部２の側面から外部に露出している。
【００１３】
上記第１リード３の外方端３ａに連ねて延在する立上り部３ｂ及びそれに連なる水平方向の内方端３ｃは樹脂封止部２内に埋設されている。
そして、上記外方端３ａの先端から立上り部３ｂまでの下面が樹脂封止部２から露出し、かつ、該樹脂封止部２の下面と同一面となるように形成されている。
【００１４】
上記樹脂封止型半導体装置１には、第１リード３に対向して第２リード４が配置されている。すなわち、第２リード４は板材により平板状に形成され、その外方端４ａの一部が樹脂封止部２から外部に露出している。そして第２リード４の内方端４ｃは樹脂封止部２内に埋設されるが、該内方端４ｃから外方端４ａまでの第２リード４の下面は樹脂封止部２より外部に露出し、かつ、該樹脂封止部２の下面と同一面となるように形成されている。
【００１５】
上記第２リード４の内方端４ｃの上面には半導体ペレット５が半田１２より固着され、この半導体ペレット５の表面電極（図示せず）と前記第１リード３の内方端３ｃとが電気的に接続されている。
すなわち、この実施例では平板状の導体からなる内部リード１３を用いて接続している。この内部リード１３の一方の端部には凸部１３ａが形成され、この凸部１３ａが半導体ペレット５の表面電極と半田１２を介して固着される。また、内部リード１３の他方の端部にもプレス等で打ち出し加工された突起１３ｂを有し、この突起１３ｂと相補形状をなす凹部３ｄが第１リード３の内方端３ｃ上に形成されている。
【００１６】
したがって、上記の凹部３ｄに内部リード１３の突起１３ｂを嵌め合わせることにより両者の相対的な位置決めがなされるようになる。
なお、上記の嵌め合わせ部分も半田により固着される。
【００１７】
次に、上記樹脂封止型半導体装置１を製作する方法の概略を、図２を参照して説明する。
図において、１４はリードフレーム全体を示し、このリードフレーム１４は、その長手方向に連続するタイバ部１５ａ，１５ｂを有している。この互いに対向するタイバ部１５ａ，１５ｂから内方に向かって第１リード３及び第２リード４が形成されている。また、第１リード３には、リードフレーム１４の状態でプレス等により予め折り曲げ形成された立上り部３ｂ及びこれに連なる内方端３ｃを有している。
なお、リードフレーム１４のタイバ部１５ａ，１５ｂ間は、補強等のため、必要に応じて連結部１６が設けられている。
【００１８】
上記リードフレーム１４の第２リード４上には、図示のように半導体ペレット５が半田固着され、第１リード３の内方端３ｃと半導体ペレット４の表面電極との間が内部リード１３により接続される。この状態のリードフレーム１４を図示を省略した金型内に収納して封止用樹脂を注入し、従来と同様にトランスファーモールド法等により二点鎖線で示した部分に樹脂封止部２を形成する。
最後に、タイバ部１５ａ，１５ｂ及び連結部１６をリードフレーム１４から切り離して図１に示したような樹脂封止型半導体装置１を得る。
【００１９】
上記のようにして得られた樹脂封止型半導体装置１は、一方のリード３のみに立上り部３ｂを形成するようにしているので、両方のリード３，４の下面を樹脂封止部２の下面と面一に設けるものに比べ、両リード３，４間の沿面距離Ｌを長くすることができ、逆電圧を高くすることができる。
【００２０】
また、半導体ペレット５の表面電極と第１リード３との接続は、細線のボンディングワイヤを使用することなく、平板状の内部リード１３を使用しているので、半導体ペレット５からの発熱を効率良く放熱でき、大電流を流せる。さらに、樹脂封止部２の形成後にリードのフォーミング加工をすることがないので、半導体ペレット５及び樹脂封止部２に機械的ストレスを与えず、電気的特性の劣化及び樹脂封止部２にクラックを発生させることがなく、耐湿性を損ねることもない。
【００２１】
なお、上記の実施例では、内部リード１３側に突起１３ｂを形成したが、これを逆にして第１リード３側に突起、内部リード１３側に該凹部を形成するようにしても良い。
【００２２】
次に、本発明の詳細な点を、図３を参照して説明する。図３は、第２リード４の内方端４ｃを図示した拡大図である。この図から明らかなように、本実施例では上記内方端４ｃの先端部４ｄを上方に偏位させ、図１に示した沿面距離Ｌをさらに長くしたものである。この沿面距離Ｌを寸法的には僅かに長くするものであっても、前述したようにこの種の樹脂封止型半導体装置は全長が僅か４ｍｍ程度であり、そのため相対的には大きな効果となって現れるものである。なお、上記第２リード４の先端部４ｄの加工はリードフレーム１４の状態の時に、プレス等により加工しておけば良い。
【００２３】
【発明の効果】
以上説明したように本発明は、左右非対称のリードを使用し、また、一方のリードと半導体ペレットの表面電極との接続に細線のボンディングワイヤを使用することなく、平板状の内部リードを使用して接続するようにしたので概略次のような効果がある。
（１）半導体ペレットからの発熱を効率良く放熱できる構造となり、大電流を流せる。
（２）リードの樹脂封止後のフォーミング加工がなく半導体ペレット及び樹脂封止部に機械的ストレスを与えないので、電気的特性に悪影響を与えることもなく、また、樹脂封止部にクラックを発生させず、耐湿性を損ねることもない。
（３）第２リードの先端部を上方に偏位させる場合には沿面距離の増加とともに、樹脂封止部との付着面積が増加し、付着強度が大きくなり耐湿性が向上する。
【図面の簡単な説明】
【図１】本発明の樹脂封止型半導体装置の縦断面図である。
【図２】本発明に使用するリードフレーム等の斜視図である。
【図３】本発明の実施例を詳細に示す拡大図である。
【図４】従来の樹脂封止型半導体装置に使用するリードフレーム等の斜視図である。
【図５】従来の樹脂封止型半導体装置の構造例を示す縦断面図である。[0001]
The present invention relates to an improved structure of a resin-encapsulated semiconductor device that can be surface-mounted on an electronic circuit board or the like.
[0002]
[Prior art]
A conventional structure example of a resin-encapsulated semiconductor device will be described with reference to FIGS. First, the resin-encapsulated semiconductor device 1 shown in FIG. 5 includes a first lead 3 and a second lead 4 having flat outer ends 3 a and 4 a that are bent so as to be flush with the lower surface of the resin-encapsulated portion 2. It has.
[0003]
Crank-shaped rising portions 3b and 4b formed continuously with the outer ends 3a and 4a are exposed to the outside from the resin sealing portion 2, and inner ends 3c and 4c connected to the rising portions 3b and 4b are It is embedded in the resin sealing part 2. A semiconductor pellet 5 is soldered onto the inner end 3 c of the first lead 3, and a surface electrode (not shown) of the semiconductor pellet 5 and the inner end 4 c of the second lead 4 are connected by a bonding wire 6. Has been.
[0004]
In order to manufacture the resin-encapsulated semiconductor device 1 shown in FIG. 5, for example, a lead frame 7 as shown in FIG. 4 is used.
That is, the first lead portion 10 and the second lead portion 11 extending inward from the tie bar portions 8 and 9 provided facing the width direction of the lead frame 7 are formed. The semiconductor pellet 5 is mounted and fixed to the tip of 10. A surface electrode (not shown) of the semiconductor pellet 5 and the tip of the second lead 11 are connected by a bonding wire 6.
The lead frame 7 is connected between the tie bar portions 8 and 9 facing each other by a connecting portion 7a for reinforcement or the like.
[0005]
The lead frame 7 is housed in a mold (not shown), a sealing resin is injected into the mold, and the resin sealing portion 2 is formed in a portion indicated by a two-dot chain line by a transfer molding method or the like. To do.
In the lead frame 7 taken out from the mold, the tie bars 8 and 9 and the connecting part 11 are separated by a press or the like. In the resin-encapsulated semiconductor device 1 of FIG. 5, the crank-shaped rising parts 3b and 4b and The continuous flat outer ends 3a and 4a are bent by a press or the like.
[0006]
[Problems to be solved by the invention]
Since the conventional resin-encapsulated semiconductor device is configured as described above, there are the following problems to be solved.
(1) Since the surface electrode of the semiconductor pellet 5 and the inner end 4 c of the second lead 4 are connected by the bonding wire 6, heat radiation from the upper surface of the semiconductor pellet 5 is poor, and the current that can flow through the semiconductor pellet 5 There was a problem to be solved that could not be increased.
(2) There is a possibility that mechanical stress is applied to the semiconductor pellet 5 during the forming process of the lead exposed to the outside from the side surface of the resin sealing portion 2 and the electrical characteristics of the semiconductor device may be deteriorated. There was a problem to be solved that a crack may occur in the portion 2 and the moisture resistance may be impaired.
[0007]
OBJECT OF THE INVENTION
The present invention has been made to solve the above-mentioned problems. (1) A structure capable of efficiently dissipating heat generated from semiconductor pellets to allow a large current to flow, and (2) lead forming processing. It is an object of the present invention to provide a resin-encapsulated semiconductor device that does not apply mechanical stress to the semiconductor pellet and the resin-encapsulated portion.
[0008]
[Means for Solving the Problems]
According to invention of Claim 1, it has the 1st lead (3) connected to a semiconductor pellet (5), and a 2nd lead (4), and this semiconductor pellet (5) and said 1st lead ( In the resin-encapsulated semiconductor device in which the periphery of the inner end (3c) of 3) and the inner end (4c) of the second lead (4) is sealed with resin to form the resin-encapsulated portion (2). ,
The lower surface of the outer end (3a) of the first lead (3) is flush with the lower surface of the resin sealing portion (2) and continues to the outer end (3a) of the first lead (3). The rising portion (3b), which is embedded in the resin sealing portion (2), is connected to the rising portion (3b) of the first lead (3) and is formed in the horizontal direction (3c). The second lead (4) has an outer end (4a) that is electrically connected to the semiconductor pellet (5) and continues to the inner end (4c), and is external to the second lead (4). One end of the side end (4a) is exposed from the resin sealing portion (2), and the entire lower surface of the second lead (4) is flush with the lower surface of the resin sealing portion (2). Formed as
The tip (4d) of the inner end (4c) of the second lead (4) is bent and displaced upward, and the creepage distance between the first lead (3) and the second lead (4) is increased. And
A semiconductor pellet (5) is fixed to the upper surface of the inner lead (4c) of the second lead (4) other than the tip (4d) that is deflected upward. A resin-encapsulated semiconductor device is provided.
[0010]
According to the second aspect of the present invention, semiconductor pellets fixed to the upper surface of the inner end (3c) of the first lead (3) and the inner end (3c) of the second lead (4) ( 5. The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is electrically connected to the upper surface of 5) by an internal lead (13) made of a flat conductor.
[0011]
According to the third aspect of the present invention, one of the connecting portions between the inner end (3c) of the first lead (3) and the outer end of the inner lead (13) is a convex portion and the other is a concave portion. 3. The resin-encapsulated semiconductor device according to claim 2, wherein the resin-encapsulated semiconductor devices are provided so as to be positioned with respect to each other.
[0012]
【Example】
Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 is a longitudinal sectional view of a resin-encapsulated semiconductor device according to the present invention. In the figure, a resin-encapsulated semiconductor device 1 has a first lead 3, and the first lead 3 is outward as in the prior art. A part of the end 3 a is exposed to the outside from the side surface of the resin sealing portion 2.
[0013]
The rising portion 3 b extending to the outer end 3 a of the first lead 3 and the horizontal inner end 3 c extending to the outer end 3 a are embedded in the resin sealing portion 2.
The lower surface from the tip of the outer end 3 a to the rising portion 3 b is formed so as to be exposed from the resin sealing portion 2 and to be flush with the lower surface of the resin sealing portion 2.
[0014]
In the resin-encapsulated semiconductor device 1, the second lead 4 is disposed to face the first lead 3. That is, the second lead 4 is formed in a flat plate shape by a plate material, and a part of the outer end 4 a is exposed from the resin sealing portion 2 to the outside. The inner end 4 c of the second lead 4 is embedded in the resin sealing portion 2, but the lower surface of the second lead 4 from the inner end 4 c to the outer end 4 a is outside the resin sealing portion 2. It is formed so as to be exposed and to be flush with the lower surface of the resin sealing portion 2.
[0015]
A semiconductor pellet 5 is fixed to the upper surface of the inner end 4c of the second lead 4 by solder 12, and the surface electrode (not shown) of the semiconductor pellet 5 and the inner end 3c of the first lead 3 are electrically connected. Connected.
That is, in this embodiment, the connection is made by using the internal lead 13 made of a flat conductor. A convex portion 13 a is formed at one end of the internal lead 13, and the convex portion 13 a is fixed to the surface electrode of the semiconductor pellet 5 via the solder 12. Further, the other end portion of the internal lead 13 has a protrusion 13b punched out by a press or the like, and a recess 3d that is complementary to the protrusion 13b is formed on the inner end 3c of the first lead 3. Yes.
[0016]
Therefore, by fitting the protrusion 13b of the internal lead 13 into the recess 3d, the relative positioning of the two can be achieved.
The fitting portion is also fixed by solder.
[0017]
Next, an outline of a method for manufacturing the resin-encapsulated semiconductor device 1 will be described with reference to FIG.
In the figure, reference numeral 14 denotes the entire lead frame, and the lead frame 14 has tie bar portions 15a and 15b continuous in the longitudinal direction. A first lead 3 and a second lead 4 are formed inward from the tie bar portions 15a and 15b facing each other. The first lead 3 has a rising portion 3b that is bent in advance by a press or the like in the state of the lead frame 14, and an inner end 3c that is continuous with the rising portion 3b.
In addition, between the tie parts 15a and 15b of the lead frame 14, the connection part 16 is provided as needed for reinforcement etc.
[0018]
A semiconductor pellet 5 is soldered on the second lead 4 of the lead frame 14 as shown in the figure, and the inner lead 13 connects between the inner end 3c of the first lead 3 and the surface electrode of the semiconductor pellet 4. Is done. The lead frame 14 in this state is housed in a mold (not shown) and a sealing resin is injected, and the resin sealing portion 2 is formed in the portion indicated by the two-dot chain line by the transfer molding method or the like as in the prior art. To do.
Finally, the tie bar portions 15a and 15b and the connecting portion 16 are separated from the lead frame 14 to obtain the resin-encapsulated semiconductor device 1 as shown in FIG.
[0019]
In the resin-encapsulated semiconductor device 1 obtained as described above, the rising portion 3 b is formed only on one lead 3, so that the lower surfaces of both leads 3 and 4 are connected to the resin-encapsulated portion 2. The creepage distance L between the leads 3 and 4 can be increased and the reverse voltage can be increased as compared with the one provided flush with the lower surface.
[0020]
In addition, the connection between the surface electrode of the semiconductor pellet 5 and the first lead 3 uses a flat internal lead 13 without using a thin bonding wire, so that heat from the semiconductor pellet 5 is efficiently generated. Heat can be dissipated and large current can flow. Further, since the lead forming process is not performed after the resin sealing portion 2 is formed, the semiconductor pellet 5 and the resin sealing portion 2 are not subjected to mechanical stress, and the electrical characteristics are deteriorated and the resin sealing portion 2 is not affected. It does not generate cracks and does not impair moisture resistance.
[0021]
In the above embodiment, the projection 13b is formed on the internal lead 13 side. However, the projection may be reversed and the concave portion may be formed on the first lead 3 side and the internal lead 13 side.
[0022]
Next, details of the present invention will be described with reference to FIG. FIG. 3 is an enlarged view illustrating the inner end 4 c of the second lead 4. As is apparent from this figure, in this embodiment, the tip end portion 4d of the inner end 4c is displaced upward, and the creeping distance L shown in FIG. 1 is further increased. Even if the creeping distance L is slightly increased in dimension, as described above, this type of resin-encapsulated semiconductor device has a total length of only about 4 mm, which is relatively effective. Appear. The tip 4d of the second lead 4 may be processed by a press or the like when the lead frame 14 is in the state.
[0023]
【The invention's effect】
As described above, the present invention uses an asymmetrical lead, and uses a flat internal lead without using a fine bonding wire to connect one lead to the surface electrode of the semiconductor pellet. As a result, the following effects are obtained.
(1) The structure can efficiently dissipate heat generated from the semiconductor pellet, and a large current can flow.
(2) Since there is no forming process after the resin sealing of the lead and no mechanical stress is given to the semiconductor pellet and the resin sealing part, the electrical characteristics are not adversely affected, and the resin sealing part is cracked. Does not occur and does not impair the moisture resistance.
(3) When the tip of the second lead is displaced upward, the adhesion area with the resin sealing portion increases as the creeping distance increases, and the adhesion strength increases and the moisture resistance improves.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view of a resin-encapsulated semiconductor device of the present invention.
FIG. 2 is a perspective view of a lead frame and the like used in the present invention.
FIG. 3 is an enlarged view showing an embodiment of the present invention in detail .
FIG. 4 is a perspective view of a lead frame and the like used in a conventional resin-encapsulated semiconductor device.
FIG. 5 is a longitudinal sectional view showing a structural example of a conventional resin-encapsulated semiconductor device.

Claims (3)

半導体ペレット（５）に接続される第１リード（３）と第２リード（４）とを有し、該半導体ペレット（５）及び前記第１リード（３）の内方端（３ｃ）ならびに第２リード（４）の内方端（４ｃ）の周囲を樹脂にて封止し、樹脂封止部（２）を形成した樹脂封止型半導体装置において、
上記第１リード（３）の外方端（３ａ）の下面は、上記樹脂封止部（２）の下面と同一平面とし、上記第１リード（３）の外方端（３ａ）に連らなる立上り部（３ｂ）は、上記樹脂封止部（２）内に埋設され、該第１リード（３）の立上り部（３ｂ）に連ねて水平方向に形成された内方端（３ｃ）と前記半導体ペレット（５）とが電気的に接続され、前記内方端（４ｃ）と連なる外方端（４ａ）を前記第２リード（４）が有し、前記第２リード（４）の外方端（４ａ）は、上記樹脂封止部（２）から一部が露出され、かつ、該第２リード（４）の下面全体が上記樹脂封止部（２）の下面と同一平面となるように形成し、
前記第２リード（４）の内方端（４ｃ）の先端部（４ｄ）を折り曲げて上方へ偏位させ、前記第１リード（３）と第２リード（４）と間の沿面距離を長くし、
前記第２リード（４）の内方端（４ｃ）のうち、上方へ偏位せしめられている先端部（４ｄ）以外の部分の上面に半導体ペレット（５）を固着させたことを特徴とする樹脂封止型半導体装置。A first lead (3) and a second lead (4) connected to the semiconductor pellet (5), the semiconductor pellet (5), the inner end (3c) of the first lead (3), and the first lead (3) In the resin-encapsulated semiconductor device in which the periphery of the inner end (4c) of the two leads (4) is sealed with resin to form the resin-encapsulated portion (2),
The lower surface of the outer end (3a) of the first lead (3) is flush with the lower surface of the resin sealing portion (2) and continues to the outer end (3a) of the first lead (3). The rising portion (3b), which is embedded in the resin sealing portion (2), is connected to the rising portion (3b) of the first lead (3) and is formed in the horizontal direction (3c). The second lead (4) has an outer end (4a) that is electrically connected to the semiconductor pellet (5) and continues to the inner end (4c), and is external to the second lead (4). One end of the side end (4a) is exposed from the resin sealing portion (2), and the entire lower surface of the second lead (4) is flush with the lower surface of the resin sealing portion (2). Formed as
The tip (4d) of the inner end (4c) of the second lead (4) is bent and displaced upward, and the creepage distance between the first lead (3) and the second lead (4) is increased. And
A semiconductor pellet (5) is fixed to the upper surface of the inner lead (4c) of the second lead (4) other than the tip (4d) that is deflected upward. Resin-sealed semiconductor device. 前記第１リード（３）の内方端（３ｃ）と、前記第２リード（４）の内方端（３ｃ）の上面に固着された半導体ペレット（５）の上面とは、平板状の導体からなる内部リード（１３）により電気的に接続したことを特徴とする請求項１に記載の樹脂封止型半導体装置。  The inner end (3c) of the first lead (3) and the upper surface of the semiconductor pellet (5) fixed to the upper surface of the inner end (3c) of the second lead (4) are flat conductors The resin-encapsulated semiconductor device according to claim 1, wherein the resin-encapsulated semiconductor device is electrically connected by an internal lead (13). 前記第１リード（３）の内方端（３ｃ）と前記内部リード（１３）の外方端との接続部は、一方が凸部で他方が凹部の相補形状を備え、互いの位置決めをなすことを特徴とする請求項２に記載の樹脂封止型半導体装置。  The connecting portion between the inner end (3c) of the first lead (3) and the outer end of the inner lead (13) has a complementary shape in which one is a convex portion and the other is a concave portion. The resin-encapsulated semiconductor device according to claim 2.
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