JP3730469B2 - Resin-sealed semiconductor device and manufacturing method thereof - Google Patents

Resin-sealed semiconductor device and manufacturing method thereof Download PDF

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Publication number
JP3730469B2
JP3730469B2 JP2000013362A JP2000013362A JP3730469B2 JP 3730469 B2 JP3730469 B2 JP 3730469B2 JP 2000013362 A JP2000013362 A JP 2000013362A JP 2000013362 A JP2000013362 A JP 2000013362A JP 3730469 B2 JP3730469 B2 JP 3730469B2
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Prior art keywords
resin
semiconductor chip
semiconductor device
connection terminal
manufacturing
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JP2001203301A (en
Inventor
広治 古里
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/848—Bonding techniques
    • H01L2224/84801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Description

【０００１】
【発明の属する分野】
本発明は、電気及び電子機器等に使用される小型・薄型タイプの樹脂封止型半導体装置の構造と、その製造方法に関するものである。
【０００２】
【従来の技術】
従来の樹脂封止型半導体装置は、リードフレーム上に半導体チップ等を組立した後、トランスファーモールド法等により樹脂封止して製造しているが、近年の電子機器の小型化、薄型化、及び低価格化の要求を満足するには、安定した生産工程で、生産性の高い製造が必要となっているが、携帯機器市場等の急速な小型化、薄型化に対して、十分に要求に応えられない状況になっている。
【０００３】
図６は従来タイプの樹脂封止型半導体装置を示すものである。図６で半導体チップ1と接続端子２に接合剤４を介して電気的に接続（例えば、はんだ接続）した後、封止樹脂３で覆って樹脂封止型半導体装置を形成している。
【０００４】
しかし、半導体チップの下側に接続端子及び封止樹脂を有している為、薄型化に出来ない、幅方向も接続端子を形成する為、小型化出来ない等の欠点がある。
【０００５】
【本発明が解決しようとする課題】
本発明は、上記従来技術の問題点を鑑みてなされたもので、その目的は、リードフレーム上に配置していた半導体チップの裏面と接続端子の半導体チップと反対の接続点を同一面にし、実装基板上のパターンと直接接続できる構造にしたことにより、リードフレームの板厚とモールド樹脂部分の厚みを削減でき、実装基板上のパターンとの接続が容易になる小型化、薄型化に適した樹脂封止型半導体装置を提供できる。
【０００６】
【課題を解決しようとする手段】
本願は、半導体チップ下面及び上面に予備はんだが施された半導体チップを接続端子を用いて樹脂封止した樹脂封止型半導体装置において、前記接続端子は肉厚部と肉薄部を持ち、肉薄部の下面で前記半導体チップの上面と接続するとともに樹脂封止内に配置し、前記肉厚部は側面において封止樹脂より突出するようにし、半導体チップ下面とともに下面樹脂より突出するようにした事を特徴とする。
【０００７】
一般に接続端子を複数個配置したリードフレームの所定位置に半導体チップを固着した後に、封止樹脂を成形する。したがって、請求項記載の発明のように、接続端子に固着済み半導体チップの他方の面と接続端子を半導体チップ下面とともに下面樹脂より突出するようにして形成することが可能になり、しかも接続端子を肉薄部で接続し、肉厚部を半導体チップの他方の面と同一方向に露出させることができる。
【０００８】
肉厚部の接続端子は樹脂封止の外で希望の長さに切断でき、実装基板への接合により強度をもたせ、半導体チップの上方向は接続端子が肉薄部の厚みだけ上乗せされるだけで上方向への厚さを削減される。
【０００９】
半導体チップの絶縁については接合面を樹脂封止するとともに肉薄部の長さを調整することにより樹脂封止下面の接続端子と半導体チップ間の距離をかせぐことができる。
【００１０】
【発明の実施の形態】
以下、添付図面を用いて本発明に係る樹脂封止型半導体装置及びその製造方法の実施形態を説明する。なお、図面の説明において同一部材には同じ符号を付し、重複する説明は省略する。
【００１１】
図１は従来の実施形態を示しており、図１aはその正面断面図、同図ｂは下面図、である。この半導体装置１は、縦が約２mm、横が約３mm、高さが約０．７mmの小型で薄型の表面実装タイプの樹脂封止型半導体装置である。
【００１２】
図２は本発明の製造方法の実施例を示しており、図２aはその平面透視図、同図ｂは正面図、である。接続端子は複数個が連続的に配置されているリードフレーム５になっており、肉薄部と肉厚部の平面側を下にして半導体チップを例えば、はんだ付けのような方法で接続すればリードフレームは安定して半導体チップの平面とリードフレームの肉厚部が略同一平面に形成され易い。また肉厚部をストッパとして上から荷重することもできる。リードフレームが半導体チップと接続する部分５aは、沿面放電防止の為に折り曲げ加工やテラス形状を施してもよい。
【００１３】
半導体チップ１は、あらかじめ両面に予備はんだしたものを使い樹脂封止する。
【００１４】
図３は本発明の凸部を有する実施例を示す半導体装置を示しており、半導体チップが樹脂封止面より凸になっている場合であり、封止樹脂を形成する際に用いるモールド金型を凸寸法に対応して、凹形状を設けることにより、容易に凸寸法ｔをコントロールすることが容易である。半導体チップの外周部分は成形時にクラック等の特性に悪い影響を与える恐れがあるため、凹形状を多少大きめにすると良い。
【００１５】
図４は、複数の半導体チップを有する実施例を示しており、実装基板配線パターンと組み合わせてモジュール回路を形成することができる。
【００１６】
図５は、本発明の装置を実装基板６に実装した場合であり、電流容量の大きいパワーデバイスでは、配線パターン７を介して半導体チップからの発熱を放熱する機能に適する。
【００１７】
【発明の効果】
半導体チップ、接続端子用のリードフレーム、接合剤及び成形樹脂のみで、小型で薄型の樹脂封止型半導体装置を提供できる。接続端子の接続点の形状を必要に応じて大きくすることもできるため強度上の対策もでき、しかも肉薄部の長さを調整することで絶縁距離を確保することができる。
【図面の簡単な説明】
【図１】従来方式の半導体装置である。
【図２】本発明の製造方法の実施例を示す図である。
【図３】本発明の凸部を有する実施例を示す半導体装置である。
【図４】本発明の複数半導体チップを有する一実施例を示す半導体装置である。
【図５】本発明の半導体装置を実装基板に実装した実施例を示す図である。
【図６】従来方式の半導体装置である。
【符号の説明】
１ 半導体チップ
２ 接続端子
３ 封止樹脂
４ 接合剤
５ リードフレーム
６ 実装基板
７ 配線パターン[0001]
[Field of the Invention]
The present invention relates to a structure of a small and thin type resin-encapsulated semiconductor device used for electric and electronic devices and a manufacturing method thereof.
[0002]
[Prior art]
Conventional resin-encapsulated semiconductor devices are manufactured by assembling a semiconductor chip or the like on a lead frame, and then encapsulating the resin by a transfer molding method or the like. In order to satisfy the demand for lower prices, high-productivity manufacturing is required with a stable production process, but it is fully required for rapid downsizing and thinning in the mobile device market and the like. The situation is unacceptable.
[0003]
FIG. 6 shows a conventional resin-encapsulated semiconductor device. In FIG. 6, the semiconductor chip 1 and the connection terminal 2 are electrically connected (for example, by solder connection) via a bonding agent 4, and then covered with a sealing resin 3 to form a resin-encapsulated semiconductor device.
[0004]
However, since the connection terminal and the sealing resin are provided on the lower side of the semiconductor chip, there are disadvantages that the thickness cannot be reduced and the connection terminal is formed also in the width direction, so that the size cannot be reduced.
[0005]
[Problems to be solved by the present invention]
The present invention has been made in view of the above-mentioned problems of the prior art, and its purpose is to make the back surface of the semiconductor chip arranged on the lead frame and the connection point opposite to the semiconductor chip of the connection terminal the same surface, With a structure that can be directly connected to the pattern on the mounting board, the thickness of the lead frame and the mold resin part can be reduced, making it easy to connect with the pattern on the mounting board. A resin-encapsulated semiconductor device can be provided.
[0006]
[Means to solve the problem]
The present application relates to a resin-encapsulated semiconductor device in which a semiconductor chip with preliminary solder applied to the lower surface and upper surface of a semiconductor chip is resin-sealed using a connection terminal. The connection terminal has a thick portion and a thin portion, and the thin portion The lower surface of the semiconductor chip is connected to the upper surface of the semiconductor chip and disposed in the resin seal, and the thick portion protrudes from the sealing resin at the side surface and protrudes from the lower surface resin together with the lower surface of the semiconductor chip. Features.
[0007]
Generally, after a semiconductor chip is fixed to a predetermined position of a lead frame in which a plurality of connection terminals are arranged, a sealing resin is molded. Therefore, as in the invention described in the claims, it is possible to form the other surface of the semiconductor chip fixed to the connection terminal and the connection terminal so as to protrude from the lower surface resin together with the lower surface of the semiconductor chip. The thin portion can be connected, and the thick portion can be exposed in the same direction as the other surface of the semiconductor chip.
[0008]
The connection terminal of the thick part can be cut to the desired length outside of the resin seal, and the strength is obtained by bonding to the mounting board, and the upper direction of the semiconductor chip is just added by the thickness of the thin part The thickness in the upward direction is reduced.
[0009]
Regarding the insulation of the semiconductor chip, the distance between the connection terminal on the lower surface of the resin seal and the semiconductor chip can be increased by sealing the joint surface with resin and adjusting the length of the thin portion.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of a resin-encapsulated semiconductor device and a method for manufacturing the same according to the present invention will be described with reference to the accompanying drawings. In the description of the drawings, the same members are denoted by the same reference numerals, and redundant descriptions are omitted.
[0011]
FIG. 1 shows a conventional embodiment, FIG. 1a is a front sectional view thereof, and FIG. 1b is a bottom view thereof. The semiconductor device 1 is a small and thin surface-mount type resin-encapsulated semiconductor device having a length of about 2 mm, a width of about 3 mm, and a height of about 0.7 mm.
[0012]
FIG. 2 shows an embodiment of the manufacturing method of the present invention, FIG. 2a is a plan perspective view thereof, and FIG. 2b is a front view thereof. The connection terminal is a lead frame 5 in which a plurality of connection terminals are continuously arranged. If the semiconductor chip is connected by, for example, a soldering method with the thin portion and the plane portion of the thick portion facing down, the lead is provided. In the frame, the plane of the semiconductor chip and the thick portion of the lead frame are easily formed on substantially the same plane. Further, it is possible to load from above using the thick portion as a stopper. The portion 5a where the lead frame is connected to the semiconductor chip may be bent or terraced to prevent creeping discharge.
[0013]
The semiconductor chip 1 is resin-sealed using pre-soldered surfaces on both sides.
[0014]
FIG. 3 shows a semiconductor device showing an embodiment having a convex portion of the present invention, in which the semiconductor chip is convex from the resin sealing surface, and the mold used for forming the sealing resin It is easy to control the convex dimension t by providing a concave shape corresponding to the convex dimension. Since the outer peripheral portion of the semiconductor chip may adversely affect characteristics such as cracks during molding, it is preferable to make the concave shape somewhat larger.
[0015]
FIG. 4 shows an embodiment having a plurality of semiconductor chips, and a module circuit can be formed in combination with a mounting substrate wiring pattern.
[0016]
FIG. 5 shows a case where the apparatus of the present invention is mounted on the mounting substrate 6. A power device having a large current capacity is suitable for the function of radiating heat generated from the semiconductor chip through the wiring pattern 7.
[0017]
【The invention's effect】
A small and thin resin-encapsulated semiconductor device can be provided by using only a semiconductor chip, a lead frame for connection terminals, a bonding agent, and a molding resin. Since the shape of the connection point of the connection terminal can be increased as necessary, measures for strength can be taken, and the insulation distance can be secured by adjusting the length of the thin portion.
[Brief description of the drawings]
FIG. 1 shows a conventional semiconductor device.
FIG. 2 is a diagram showing an embodiment of the production method of the present invention.
FIG. 3 is a semiconductor device showing an embodiment having a convex portion of the present invention.
FIG. 4 is a semiconductor device showing an embodiment having a plurality of semiconductor chips of the present invention.
FIG. 5 is a diagram showing an embodiment in which the semiconductor device of the present invention is mounted on a mounting substrate.
FIG. 6 shows a conventional semiconductor device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Connection terminal 3 Sealing resin 4 Bonding agent 5 Lead frame 6 Mounting board 7 Wiring pattern

Claims (1)

半導体チップ下面及び上面に予備はんだが施された半導体チップを接続端子を用いて樹脂封止した樹脂封止型半導体装置において、前記接続端子は肉厚部と肉薄部を持ち、肉薄部の下面で前記半導体チップの上面と接続するとともに樹脂封止内に配置し、前記肉厚部は側面において封止樹脂より突出するようにし、半導体チップ下面とともに下面樹脂より突出するようにした事を特徴とする樹脂封止型半導体装置。 In a resin-encapsulated semiconductor device in which a semiconductor chip with pre-solder applied to the lower surface and upper surface of a semiconductor chip is resin-sealed using a connection terminal, the connection terminal has a thick portion and a thin portion, and the lower surface of the thin portion The semiconductor chip is connected to the upper surface of the semiconductor chip and disposed in the resin seal, and the thick portion protrudes from the sealing resin on the side surface and protrudes from the lower surface resin together with the lower surface of the semiconductor chip. Resin-sealed semiconductor device.
JP2000013362A 2000-01-21 2000-01-21 Resin-sealed semiconductor device and manufacturing method thereof Expired - Fee Related JP3730469B2 (en)

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US10256168B2 (en) 2016-06-12 2019-04-09 Nexperia B.V. Semiconductor device and lead frame therefor
US10529644B2 (en) 2015-03-06 2020-01-07 Nexperia B.V. Semiconductor device

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CN100514580C (en) * 2003-08-26 2009-07-15 宇芯（毛里求斯）控股有限公司 Reversible leadless package and stack thereof
KR101037246B1 (en) * 2004-10-18 2011-05-26 스태츠 칩팩, 엘티디. Multi Chip Leadframe Package

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