JPH0254665B2 - - Google Patents
Info
- Publication number
- JPH0254665B2 JPH0254665B2 JP59159047A JP15904784A JPH0254665B2 JP H0254665 B2 JPH0254665 B2 JP H0254665B2 JP 59159047 A JP59159047 A JP 59159047A JP 15904784 A JP15904784 A JP 15904784A JP H0254665 B2 JPH0254665 B2 JP H0254665B2
- Authority
- JP
- Japan
- Prior art keywords
- strip
- support plate
- resin
- mold
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920005989 resin Polymers 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、樹脂封止形半導体装置、特に短絡事
故が少なくかつ製造が容易な樹脂封止形半導体装
置の製造方法に関連する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a resin-sealed semiconductor device, particularly to a method for manufacturing a resin-sealed semiconductor device that is less prone to short-circuit accidents and is easy to manufacture.
従来の技術
従来、一般的な電力用樹脂封止形半導体装置に
おいては、半導体チツプが接着された支持板の裏
面には封止樹脂が形成されていない。このため、
この半導体装置を外部放熱体に取付けるに際して
は、外部放熱体との間に絶縁シートを介在させな
ければならず、取付作業が煩雑になつた。そこ
で、支持板の裏面にも封止樹脂を形成する方法が
提案された。このような樹脂封止技術は、例え
ば、特開昭57−178352号公報や特開昭58−143538
号公報で開示されている。すなわち、リードフレ
ームの一部を構成する支持板上に半導体チツプを
電気伝導可能に接着したのち、半導体チツプは細
線で外部リードと接続される。次に、リードフレ
ームは金型に装着され、キヤビテイ内に融解樹脂
が圧入される。このとき、キヤビテイ内で支持板
が移動しないように、支持板の各側部に連絡され
た外部リードと細条が金型で把持される。融解樹
脂が固化したのち、リードフレームが金型から取
外され、リードフレームの所定部分が切断され
る。特開昭57−178352号では、細条を折り曲げて
切断するために、封止樹脂の外面をまたぐように
して細条に小断面部を形成している。BACKGROUND OF THE INVENTION Conventionally, in general resin-sealed semiconductor devices for electric power, no sealing resin is formed on the back surface of a support plate to which a semiconductor chip is bonded. For this reason,
When this semiconductor device is attached to an external heat radiator, an insulating sheet must be interposed between the semiconductor device and the external heat radiator, making the mounting work complicated. Therefore, a method has been proposed in which a sealing resin is also formed on the back surface of the support plate. Such resin sealing technology is disclosed in, for example, Japanese Patent Application Laid-Open No. 57-178352 and Japanese Patent Application Laid-Open No. 58-143538.
It is disclosed in the publication no. That is, after a semiconductor chip is electrically conductively bonded onto a support plate constituting a part of a lead frame, the semiconductor chip is connected to external leads using thin wires. Next, the lead frame is attached to a mold, and molten resin is press-fitted into the cavity. At this time, the external leads and strips connected to each side of the support plate are held by the mold so that the support plate does not move within the cavity. After the molten resin has solidified, the lead frame is removed from the mold and a predetermined portion of the lead frame is cut. In JP-A-57-178352, in order to bend and cut the strip, a small cross section is formed in the strip so as to straddle the outer surface of the sealing resin.
発明が解決しようとする問題点。The problem that the invention seeks to solve.
しかし、細条の切断面が封止樹脂の外面に露出
することには変わりない。そこで、特開昭58−
143538号では、第１５図に示す通り、切断後の封
止樹脂の外面５０から突出した細条端部を化学エ
ツチング等の方法により除去し、封止樹脂の外面
５０から窪む位置５１に細条の先端を形成してい
た。しかしこの方法は、細条の一部を除去する付
加的工程が必要となりコストアツプを招いた。し
かも所望の化学エツチング等を量産的に行うこと
自体に新たな技術を要するので、実用的とは言い
難い。 However, the cut surfaces of the strips are still exposed to the outer surface of the sealing resin. Therefore, JP-A-58-
In No. 143538, as shown in FIG. 15, the ends of the strips protruding from the outer surface 50 of the sealing resin after cutting are removed by a method such as chemical etching, and a strip is inserted at a recessed position 51 from the outer surface 50 of the sealing resin. It formed the tip of the ray. However, this method required an additional step to remove a portion of the strips, resulting in increased costs. Moreover, mass production of the desired chemical etching requires a new technology, so it cannot be said to be practical.
そこで、本発明は上記問題を解決する樹脂封止
形半導体装置の製造方法を提供することを目的と
する。 SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for manufacturing a resin-sealed semiconductor device that solves the above-mentioned problems.
問題点を解決するため手段
本発明の樹脂封止形半導体装置の製造方法によ
れば、支持板と、支持板の一端に連結された外部
リードと、支持板の他端に連結された細条とを有
し、外部リード及び細条は支持板よりも肉薄であ
り、細条の一方の主面と支持板の一方の主面は実
質的に同一平面上に形成され、細条の一部に小断
面部が形成されており、支持板の一方の主面に半
導体チツプが電気的導通可能に固着されたリード
フレームを準備する工程と、細条の小断面部が金
型内のキヤビテイ形成面から実質的に所定距離だ
け内側に配置されるようにリードフレームを金型
に装着する工程と、金型のキヤビテイ内に融解樹
脂を圧入する工程と、融解樹脂の固化後、リード
フレームを金型から取出す工程と、細条にその導
出方向への引張力を作用させて、細条の小断面部
で細条を切断する工程とを含む。Means for Solving the Problems According to the method of manufacturing a resin-sealed semiconductor device of the present invention, a support plate, an external lead connected to one end of the support plate, and a strip connected to the other end of the support plate are provided. and the outer lead and the strip are thinner than the support plate, one main surface of the strip and one main surface of the support plate are formed on substantially the same plane, and a part of the strip A process of preparing a lead frame in which a small cross-section part is formed on the support plate and a semiconductor chip is fixed to one main surface of the support plate in an electrically conductive manner, and a process in which the small cross-section part of the strip forms a cavity in the mold. A step of mounting the lead frame on the mold so that it is located substantially inward from the surface by a predetermined distance, a step of press-fitting the molten resin into the cavity of the mold, and a step of inserting the lead frame into the mold after solidifying the molten resin. The method includes a step of removing the strip from the mold, and a step of cutting the strip at a small cross-section by applying a tensile force to the strip in the direction in which the strip is taken out.
作 用
細条は支持板よりも相対的に肉薄に形成され、
細条を引張りによつて容易に破断することができ
る。また、細条の一方の主面と支持板の一方の主
面とが同一の平面上に形成されているので、封止
樹脂に損傷を与えることなく、細条を引張破断で
きる。更に、細条の外部放熱体からの高さ方向の
距離が大きくとれる。このため、支持板の下面の
樹脂層を肉薄に形成しても、細条の端部と外部放
熱体との沿面距離を十分長くとれる。したがつ
て、放熱性を犠牲にすることなく絶縁耐圧の高い
半導体装置を提供できる。Function The strips are formed relatively thinner than the support plate,
The strips can be easily broken by tension. Furthermore, since one main surface of the strip and one main surface of the support plate are formed on the same plane, the strip can be tensilely broken without damaging the sealing resin. Furthermore, the height distance of the strips from the external heat sink can be increased. Therefore, even if the resin layer on the lower surface of the support plate is made thin, the creeping distance between the end of the strip and the external heat radiator can be sufficiently long. Therefore, a semiconductor device with high dielectric strength can be provided without sacrificing heat dissipation.
実施例
以下図面について、本発明の実施例を説明す
る。本発明で製造される樹脂封止形半導体装置
は、第１図に示すリードフレーム１から作られ
る。リードフレーム１は、トランジスタチツプ等
の半導体チツプ２がその一方の主面に半田付けさ
れた支持板３を有する。半導体チツプ２は、必要
に応じて保護コート４を形成するシリコン樹脂で
被覆される。支持板３には、コレクタリード５が
一体成形される。コレクタリード５は、ベースリ
ード６とエミツタリード７と共に外部リードと総
称され、タイバー８及び共通細条９により直角方
向で互いに連結される。ベースリード６とエミツ
タリード７は、それぞれアルミニウム線１０，１
１により半導体チツプ２の所定位置へ接続され
る。Embodiments Examples of the present invention will be described below with reference to the drawings. A resin-sealed semiconductor device manufactured according to the present invention is made from a lead frame 1 shown in FIG. The lead frame 1 has a support plate 3 on one main surface of which a semiconductor chip 2, such as a transistor chip, is soldered. The semiconductor chip 2 is coated with silicone resin forming a protective coat 4 if necessary. A collector lead 5 is integrally molded on the support plate 3. The collector lead 5, together with the base lead 6 and the emitter lead 7, are collectively called an external lead, and are connected to each other at right angles by a tie bar 8 and a common strip 9. The base lead 6 and the emitter lead 7 are aluminum wires 10 and 1, respectively.
1 is connected to a predetermined position of the semiconductor chip 2.
支持板３には、コレクタリード５に対し反対側
へ伸びる一対の細条１２，１３が一体に成形され
る。外部リード及び細条１２，１３は支持板３よ
りも肉薄に形成されている。また、細条１２，１
３はその一方の主面が支持板３の一方の主面と略
同一の平面上に位置するように上方に偏位してい
る。各細条１２，１３の外端は、共通細条１４に
より直角方向で互いに連結される。後工程で形成
される鎖線１５で示す封止樹脂の端面１６から所
定距離だけ内側に離れた位置の各細条１２，１３
には小断面部１７，１８が設けられる。小断面部
１７，１８は、後述の通り種々の形状に形成する
ことができる。また、小断面部１７，１８には、
細条の切断時に引張応力が集中する最小断面部１
７ａ，１８ａが形成される。 A pair of strips 12 and 13 extending toward the opposite side of the collector lead 5 are integrally formed on the support plate 3 . The external leads and strips 12, 13 are formed thinner than the support plate 3. Also, strip 12,1
3 is offset upward so that one main surface thereof is located on substantially the same plane as one main surface of the support plate 3. The outer ends of each strip 12, 13 are connected to each other at right angles by a common strip 14. Each strip 12, 13 is located a predetermined distance inward from the end surface 16 of the sealing resin indicated by a chain line 15 formed in a subsequent process.
are provided with small cross-section portions 17 and 18. The small cross-section portions 17 and 18 can be formed into various shapes as described below. Moreover, in the small cross-section portions 17 and 18,
Minimum cross section 1 where tensile stress concentrates when cutting strips
7a and 18a are formed.
なお、第１図ではトランジスタ１個分の支持板
３、外部リード及び細条１２，１３を有するリー
ドフレームを示すが、実際には、多数の支持板、
外部リード及び細条がタイバー８と共通細条９，
１４により並行に支持された金型製リードフレー
ムが使用される。 Although FIG. 1 shows a lead frame having support plate 3, external leads, and strips 12 and 13 for one transistor, in reality, a large number of support plates,
External leads and strips are tie bar 8 and common strips 9,
A mold lead frame supported in parallel by 14 is used.
リードフレーム１は、第２図及び第３図に示す
金型１９内に装着される。第２図はコレクタリー
ド５の中心線に沿う断面を示し、第３図は細条１
３の中心線に沿う断面を示す。金型１９は、下型
２０と上型２１とで構成され、リードフレーム１
を収容するキヤビテイ２２を形成する。小断面部
のうち最小断面部１７ａ，１８ａは、金型のキヤ
ビテイ形成面からｌだけ内側に配置される。 The lead frame 1 is mounted in a mold 19 shown in FIGS. 2 and 3. 2 shows a cross section along the center line of the collector lead 5, and FIG. 3 shows the strip 1.
A cross section taken along the center line of No. 3 is shown. The mold 19 is composed of a lower mold 20 and an upper mold 21, and the lead frame 1
A cavity 22 is formed to accommodate the. Among the small cross-section parts, the smallest cross-section parts 17a and 18a are arranged inward by l from the cavity forming surface of the mold.
上述の通り金型１９にリードフレーム１を装着
したのち、キヤビテイ２２内に熱硬化性の融解エ
ポキシ樹脂の公知のトランスフアモールド法によ
りゲート（図示せず）から圧入し、支持板３を含
むリードフレーム１の一部分を樹脂１５により封
止する。 After the lead frame 1 is mounted on the mold 19 as described above, the leads including the support plate 3 are press-fitted into the cavity 22 through a gate (not shown) using a known transfer molding method using a thermosetting molten epoxy resin. A portion of the frame 1 is sealed with resin 15.
樹脂１５が固化したのち、第４図に示すリード
フレーム１を金型１９から取出す。次に、樹脂１
５から導出された細条１２，１３を導出方向に引
張ることにより、小断面部１７，１８の最小断面
部１７ａ，１８ａで切断し、共通細条１４と細条
１２，１３の一部を除去する。その後、各外部リ
ードを連絡するタイバー８と共通細条９もプレス
切断により除去される。このように製造した半導
体装置の１例を第５図に示す。細条１２，１３が
導出されていた樹脂１５に孔２３，２４が形成さ
れる。本出願人は本発明による製造方法で実際に
樹脂封止形半導体装置を製造したが、孔２３，２
４の形状は細条１２，１３が抜けた跡にほぼ等し
く形成された。 After the resin 15 has solidified, the lead frame 1 shown in FIG. 4 is taken out from the mold 19. Next, resin 1
By pulling the strips 12 and 13 derived from 5 in the direction of extraction, they are cut at the minimum cross-section portions 17a and 18a of the small cross-section portions 17 and 18, and the common strip 14 and part of the strips 12 and 13 are removed. do. Thereafter, the tie bars 8 and common strips 9 connecting each external lead are also removed by press cutting. An example of a semiconductor device manufactured in this manner is shown in FIG. Holes 23, 24 are formed in the resin 15 from which the strips 12, 13 were led out. The applicant actually manufactured a resin-sealed semiconductor device using the manufacturing method according to the present invention.
The shape of No. 4 was formed almost equal to the trace where the strips 12 and 13 were removed.
また、細条１２，１３は支持板３よりも肉薄に
形成されており、最小断面部１７ａ，１８ａの断
面積は十分に小さいから、細条１２，１３は引抜
きによつて容易に破断することができる。また、
細条１２，１３はその上面が支持板３の上面と同
一の平面上に位置するように偏位されており、コ
レクタリード５のように支持板３の上方までは偏
位していないので、細条１２，１３の引抜き破断
時に孔２３，２４周辺の樹脂１５に特性変動又は
外観不良の点で実用上問題にすべきクラツク、そ
り等の異常は全く発生しなかつた。 Further, since the strips 12 and 13 are formed thinner than the support plate 3, and the cross-sectional area of the minimum cross-section portions 17a and 18a is sufficiently small, the strips 12 and 13 are easily broken by being pulled out. Can be done. Also,
The strips 12 and 13 are offset so that their upper surfaces are located on the same plane as the upper surface of the support plate 3, and are not offset above the support plate 3 like the collector lead 5. When the strips 12 and 13 were pulled out and broken, no abnormalities such as cracks or warpage occurred in the resin 15 around the holes 23 and 24, which would pose a practical problem in terms of characteristic fluctuations or poor appearance.
第６図に示すように、細条１３の端面２５は、
樹脂の端面１６より長さl1だけ内側に窪み、そこ
に孔２４が形成される。また、細条１２，１３は
上述のように支持板３の上方に偏位しており、細
条１２，１３の下面と支持板３の下面との間に段
差が形成されている。したがつて、支持板３の下
面側の樹脂１５を第３図に示すように肉薄に形成
しても細条１２，１３の外部放熱体２６からの高
さl2を大きくとれる。結果として、細条１２，１
３から外部放熱体２６までの沿面距離l0はl0＝l1
＋l2と長くなり、絶縁不良が防止される。更に、
孔２３，２４が小さいため、他の素子、キヤビネ
ツトまたは人体等を含む周囲と細条１２，１３と
の接触による短絡事故も防止される。孔２３，２
４には、絶縁不良を完全に防止するため、樹脂を
充填してもよい。しかし、この樹脂を充填しなく
ても実用上は問題はない。また、放熱性の点にお
いても、支持板３が肉厚に形成されているし、上
述のように、支持板３の下面側の樹脂１５を肉薄
に形成することができるから、支持板３の下面が
露出したタイプの半導体装置と同等の放熱効果が
期待できる。 As shown in FIG. 6, the end surface 25 of the strip 13 is
It is recessed inward by a length l 1 from the end surface 16 of the resin, and a hole 24 is formed there. Further, the strips 12 and 13 are offset above the support plate 3 as described above, and a step is formed between the lower surface of the strips 12 and 13 and the lower surface of the support plate 3. Therefore, even if the resin 15 on the lower surface side of the support plate 3 is made thin as shown in FIG. 3, the height l 2 of the strips 12 and 13 from the external heat sink 26 can be increased. As a result, Article 12,1
The creepage distance l 0 from 3 to the external heat sink 26 is l 0 = l 1
+l 2 and longer, preventing insulation failure. Furthermore,
The small size of the holes 23 and 24 also prevents short-circuit accidents caused by contact between the strips 12 and 13 and their surroundings, including other components, the cabinet, or the human body. Hole 23,2
4 may be filled with resin to completely prevent insulation defects. However, there is no practical problem even if this resin is not filled. In addition, in terms of heat dissipation, the support plate 3 is formed thickly, and as described above, the resin 15 on the lower surface side of the support plate 3 can be formed thinly. It can be expected to have the same heat dissipation effect as a semiconductor device with an exposed bottom surface.
第７図〜第１４図は、種々の形状を有する細条
の小断面部の例を示す。第７図の例では、内側に
先細のテーパ部３０を樹脂の端面１６まで細条１
３を形成しかつ引張力に対向する肩部３１が設け
られる。第８図は菱形の孔３２を細条１３に形成
した例を示し、第９図は円形の孔３３を形成した
例を示す。第１０図はテーパ部３０が樹脂外部ま
で伸びる例を示す。第１１図は肩部が３１と３４
で２段で形成した例を示し、第１２図は細条１３
の厚さを部分的に薄くして小断面部１８を形成す
る例を示す。第１３図は細条１３に加えられる引
張力に対向する力を更に強化するため、樹脂が充
填される孔３５を小断面部分より支持板側の細条
１３に形成する例で、第１４図は同様の理由で細
条１３にコイニング即ち線状の切込３６を形成し
た例を示す。 7 to 14 show examples of small cross-sections of strips having various shapes. In the example shown in FIG.
A shoulder 31 is provided forming 3 and facing the tension force. FIG. 8 shows an example in which diamond-shaped holes 32 are formed in the strip 13, and FIG. 9 shows an example in which circular holes 33 are formed. FIG. 10 shows an example in which the tapered portion 30 extends to the outside of the resin. In Figure 11, the shoulders are 31 and 34.
Figure 12 shows an example in which the strips are formed in two stages.
An example is shown in which the small cross-section portion 18 is formed by partially reducing the thickness. FIG. 13 shows an example in which a hole 35 filled with resin is formed in the strip 13 closer to the support plate than the small cross-section portion in order to further strengthen the force opposing the tensile force applied to the strip 13. shows an example in which coining, that is, a linear cut 36 is formed in the strip 13 for the same reason.
なお、上記実施例ではトランジスタについて説
明したが、この説明はダイオード、サイリスタ等
の他の半導体装置にも応用できることは明らかで
ある。 Note that although the above embodiments have described transistors, it is clear that this description can also be applied to other semiconductor devices such as diodes and thyristors.
発明の効果
上述のように、本発明の樹脂封止型半導体装置
の製造方法によれば、細条の破断部と外部放熱体
との沿面距離が大きくとれるので絶縁耐圧が向上
する。また、細条の破断部が封止樹脂の外周面よ
り内側に位置するので、細条の破断部の接触によ
る短絡事故が起こり難く、さらに支持板が細条よ
りも肉厚であるため、放射性の良好な樹脂封止形
半導体装置を提供できる。また、細条が肉薄であ
りかつ細条の一方の主面が支持板の一方の主面と
実質的に同一平面上に形成されるため、細条の破
断は容易であり、細条の切断時に封止樹脂に損傷
を与えない。本発明により製造された樹脂封止型
半導体装置は絶縁耐圧の向上と短絡事故防止の面
でも好都合である。Effects of the Invention As described above, according to the method of manufacturing a resin-sealed semiconductor device of the present invention, the creepage distance between the broken portion of the strip and the external heat sink can be increased, so that the dielectric strength voltage is improved. In addition, since the broken parts of the strips are located inside the outer peripheral surface of the sealing resin, short circuit accidents due to contact with the broken parts of the strips are less likely to occur.Furthermore, since the support plate is thicker than the strips, radioactive A resin-sealed semiconductor device with good quality can be provided. In addition, since the strips are thin and one main surface of the strip is formed on substantially the same plane as one main surface of the support plate, the strips are easy to break. Do not damage the sealing resin. The resin-sealed semiconductor device manufactured according to the present invention is advantageous in terms of improved dielectric strength and prevention of short-circuit accidents.
第１図は本発明による樹脂封止型半導体装置の
製造方法に使用するリードフレームの平面図、第
２図及び第３図はこのリードフレームを金型に装
着して樹脂封止したときのそれぞれコレクタリー
ド及び細条の中心線に沿う断面図、第４図は金型
から取出されたリードフレームの斜視図、第５図
は本発明による樹脂封止型半導体装置の製造方法
で作られた半導体装置の斜視図、第６図は細条切
断部の部分的拡大断面図、第７図、第８図、第９
図、第１０図、第１１図、第１２図、第１３図及
び第１４図は細条の小断面部に関する種々の形状
を示す断面図、第１５図は従来の樹脂封止型半導
体装置を示す破砕断面図である。
１……リードフレーム、２……半導体チツプ、
３……支持板、５，６，７……外部リード、１
２，１３……細条、１５……封止樹脂、１７，１
８……小断面部、１７ａ，１８ａ……小断面部の
うちの最小断面部、１９……金型、２２……キヤ
ビテイ。
FIG. 1 is a plan view of a lead frame used in the method for manufacturing a resin-sealed semiconductor device according to the present invention, and FIGS. 2 and 3 show the lead frame mounted in a mold and sealed with resin. 4 is a perspective view of the lead frame taken out from the mold, and FIG. 5 is a semiconductor manufactured by the method for manufacturing a resin-sealed semiconductor device according to the present invention. A perspective view of the device, FIG. 6 is a partially enlarged sectional view of the strip cutting section, FIGS. 7, 8, and 9.
10, 11, 12, 13, and 14 are cross-sectional views showing various shapes of small cross-section portions of strips, and FIG. 15 shows a conventional resin-sealed semiconductor device. FIG. 1...Lead frame, 2...Semiconductor chip,
3... Support plate, 5, 6, 7... External lead, 1
2,13...Stripes, 15...Sealing resin, 17,1
8...Small cross section, 17a, 18a...Minimum cross section of the small cross section, 19...Mold, 22...Cavity.
Claims (1)
リードと、前記支持板の他端に連結された細条と
を有し、前記外部リード及び前記細条は前記支持
板よりも肉薄であり、前記細条の一方の主面と前
記支持板の一方の主面は実質的に同一平面上に形
成され、前記細条の一部に小断面部が形成されて
おり、前記支持板の一方の主面に半導体チツプが
電気的導通可能に固着されたリードフレームを準
備する工程と、 前記細条の小断面部が金型内のキヤビテイ形成
面から実質的に所定距離だけ内側に配置されるよ
うに前記リードフレームを金型に装着する工程
と、 前記金型のキヤビテイ内に融解樹脂を圧入する
工程と、 前記融解樹脂の固化後、前記リードフレームを
前記金型から取出す工程と、 前記細条にその導出方向への引張力を作用させ
て、前記細条の小断面部で前記細条を切断する工
程と、 を含むことを特徴とする樹脂封止形半導体装置の
製造方法。 ２ 前記細条の小断面部は前記金型内のキヤビテ
イ形成面から所定距離だけ内側の位置に置かれる
最小断面部を有し、該最小断面部において前記細
条が切断される特許請求の範囲の第１項記載の樹
脂封止計半導体装置の製造方法。[Scope of Claims] 1. A support plate, an external lead connected to one end of the support plate, and a strip connected to the other end of the support plate, and the external lead and the strip are connected to the The strip is thinner than the support plate, one main surface of the strip and one main surface of the support plate are formed on substantially the same plane, and a small cross section is formed in a part of the strip. a step of preparing a lead frame having a semiconductor chip fixed thereto in an electrically conductive manner on one main surface of the support plate; attaching the lead frame to the mold so that the lead frame is disposed inward by a distance; press-fitting molten resin into the cavity of the mold; and after solidifying the molten resin, inserting the lead frame into the mold. A resin-sealed semiconductor characterized by comprising: a step of taking out the strip from the semiconductor; and a step of applying a tensile force to the strip in a direction in which the strip is taken out and cutting the strip at a small cross-section of the strip. Method of manufacturing the device. 2. Claims in which the small cross section of the strip has a minimum cross section located a predetermined distance inside from the cavity forming surface in the mold, and the strip is cut at the minimum cross section. A method for manufacturing a resin-sealed semiconductor device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59159047A JPS6156420A (en) | 1984-07-31 | 1984-07-31 | Manufacture of resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59159047A JPS6156420A (en) | 1984-07-31 | 1984-07-31 | Manufacture of resin-sealed semiconductor device |
Related Child Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8691089A Division JPH01315147A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin-sealed type semiconductor device |
| JP1086911A Division JPH0249444A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
| JP1086909A Division JPH01309338A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
| JP1086912A Division JPH0249445A (en) | 1989-04-07 | 1989-04-07 | Manufacture of resin sealed type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6156420A JPS6156420A (en) | 1986-03-22 |
| JPH0254665B2 true JPH0254665B2 (en) | 1990-11-22 |
Family
ID=15685065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59159047A Granted JPS6156420A (en) | 1984-07-31 | 1984-07-31 | Manufacture of resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6156420A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6148954A (en) * | 1984-08-15 | 1986-03-10 | Nec Kansai Ltd | Manufacture of semiconductor device |
| JPS62180957U (en) * | 1986-05-06 | 1987-11-17 | ||
| JPH0824156B2 (en) * | 1987-05-25 | 1996-03-06 | サンケン電気株式会社 | Method for manufacturing resin-sealed semiconductor device |
| JPH0741165Y2 (en) * | 1987-07-27 | 1995-09-20 | サンケン電気株式会社 | Lead frame for resin-sealed semiconductor device |
| JPS6442825A (en) * | 1987-08-10 | 1989-02-15 | Sanken Electric Co Ltd | Manufacture of resin sealed semiconductor device |
| JPH0739241Y2 (en) * | 1987-09-08 | 1995-09-06 | サンケン電気株式会社 | Lead frame for resin-sealed semiconductor device |
| IT1252624B (en) * | 1991-12-05 | 1995-06-19 | Cons Ric Microelettronica | SEMICONDUCTOR RESIN ENCLOSED AND ELECTRICALLY INSULATED DEVICE WITH IMPROVED INSULATION CHARACTERISTICS, AND RELATED MANUFACTURING PROCESS |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60172346U (en) * | 1984-04-23 | 1985-11-15 | 新電元工業株式会社 | Resin-sealed semiconductor device |
-
1984
- 1984-07-31 JP JP59159047A patent/JPS6156420A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6156420A (en) | 1986-03-22 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |